HK1192061A1 - 用於發光裝置的 型摻雜層 - Google Patents

用於發光裝置的 型摻雜層

Info

Publication number
HK1192061A1
HK1192061A1 HK14105140.2A HK14105140A HK1192061A1 HK 1192061 A1 HK1192061 A1 HK 1192061A1 HK 14105140 A HK14105140 A HK 14105140A HK 1192061 A1 HK1192061 A1 HK 1192061A1
Authority
HK
Hong Kong
Prior art keywords
light emitting
emitting devices
type doping
doping layers
layers
Prior art date
Application number
HK14105140.2A
Other languages
English (en)
Inventor
．丁
Original Assignee
株式會社東芝
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式會社東芝 filed Critical 株式會社東芝
Publication of HK1192061A1 publication Critical patent/HK1192061A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02584—Delta-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
HK14105140.2A 2011-09-29 2014-05-30 用於發光裝置的 型摻雜層 HK1192061A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/248,821 US8698163B2 (en) 2011-09-29 2011-09-29 P-type doping layers for use with light emitting devices
PCT/US2012/057661 WO2013049415A2 (en) 2011-09-29 2012-09-27 P-type doping layers for use with light emitting devices

Publications (1)

Publication Number Publication Date
HK1192061A1 true HK1192061A1 (zh) 2014-08-08

Family

ID=47991730

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14105140.2A HK1192061A1 (zh) 2011-09-29 2014-05-30 用於發光裝置的 型摻雜層

Country Status (7)

Country Link
US (4) US8698163B2 (zh)
JP (2) JP5903161B2 (zh)
KR (1) KR101608570B1 (zh)
CN (1) CN103460409B (zh)
HK (1) HK1192061A1 (zh)
TW (1) TWI557937B (zh)
WO (1) WO2013049415A2 (zh)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US8698163B2 (en) * 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
KR101376976B1 (ko) * 2012-06-29 2014-03-21 인텔렉추얼디스커버리 주식회사 반도체 발광 디바이스
JP5998953B2 (ja) * 2013-01-25 2016-09-28 豊田合成株式会社 半導体発光素子、半導体発光素子の製造方法
DE102013103602A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
DE102013103601A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
CN103325908B (zh) * 2013-05-25 2017-08-29 集美大学 一种六角形粗化表面的led外延片的制备方法
KR20150025264A (ko) * 2013-08-28 2015-03-10 삼성전자주식회사 정공주입층을 구비하는 반도체 발광 소자 및 그 제조 방법
FR3010228B1 (fr) * 2013-08-30 2016-12-30 St Microelectronics Tours Sas Procede de traitement d'une couche de nitrure de gallium comportant des dislocations
KR101804493B1 (ko) * 2013-09-03 2017-12-04 센서 일렉트로닉 테크놀로지, 인크 변조 도핑을 갖는 광전자 디바이스
US10903391B2 (en) 2013-09-03 2021-01-26 Sensor Electronic Technology, Inc. Optoelectronic device with modulation doping
US10804423B2 (en) 2013-09-03 2020-10-13 Sensor Electronic Technology, Inc. Optoelectronic device with modulation doping
US9647168B2 (en) 2013-09-03 2017-05-09 Sensor Electronic Technology, Inc. Optoelectronic device with modulation doping
KR102131697B1 (ko) * 2013-10-28 2020-07-08 서울바이오시스 주식회사 정전기 방전 특성이 향상된 반도체 소자 및 그 제조 방법
DE102014115599A1 (de) * 2013-10-28 2015-04-30 Seoul Viosys Co., Ltd. Halbleitervorrichtung und Verfahren zu deren Herstellung
KR102142709B1 (ko) * 2013-12-05 2020-08-07 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 장치
KR20150078641A (ko) * 2013-12-31 2015-07-08 일진엘이디(주) v-피트를 구비하는 질화물 반도체 발광소자 및 그 제조 방법
US20170186912A1 (en) * 2014-06-03 2017-06-29 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting element
KR102315594B1 (ko) * 2014-07-31 2021-10-21 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 조명시스템
TWI556466B (zh) * 2014-09-19 2016-11-01 錼創科技股份有限公司 氮化物半導體結構
JP2016063128A (ja) * 2014-09-19 2016-04-25 スタンレー電気株式会社 半導体発光素子
JP2016063176A (ja) * 2014-09-22 2016-04-25 スタンレー電気株式会社 半導体発光素子
KR102264671B1 (ko) 2014-09-30 2021-06-15 서울바이오시스 주식회사 자외선 발광소자
CN105591000A (zh) * 2014-10-24 2016-05-18 比亚迪股份有限公司 Led结构及其形成方法
KR102335105B1 (ko) * 2014-11-14 2021-12-06 삼성전자 주식회사 발광 소자 및 그의 제조 방법
CN104393124B (zh) * 2014-11-25 2017-04-05 天津三安光电有限公司 一种发光二极管外延片结构的制备方法
KR20160082009A (ko) * 2014-12-30 2016-07-08 서울바이오시스 주식회사 발광 소자
JP6380172B2 (ja) * 2015-03-06 2018-08-29 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子とその製造方法
DE102015104665A1 (de) 2015-03-26 2016-09-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
US10074815B2 (en) * 2015-03-31 2018-09-11 The Regents Of The University Of Michigan Organic electroluminescent devices
WO2016163595A1 (ko) * 2015-04-08 2016-10-13 한국광기술원 질화물계 반도체 발광소자 및 그 제조방법
KR102391302B1 (ko) * 2015-05-22 2022-04-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이의 제조 방법
US10243103B2 (en) 2015-06-25 2019-03-26 Lg Innotek Co., Ltd. Ultraviolet light emitting diode, light emitting diode package, and lighting device
CN106601784A (zh) * 2015-10-15 2017-04-26 比亚迪股份有限公司 基片及基片形成方法
CN105374912B (zh) * 2015-10-28 2017-11-21 厦门市三安光电科技有限公司 发光二极管及其制作方法
KR102569461B1 (ko) * 2015-11-30 2023-09-04 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 포함하는 조명장치
CN105742423B (zh) * 2015-11-30 2018-08-31 厦门市三安光电科技有限公司 发光二极管及其制作方法
WO2017115145A1 (en) 2015-12-31 2017-07-06 Delta Faucet Company Water sensor
DE102016103346A1 (de) * 2016-02-25 2017-08-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips und strahlungsemittierender Halbleiterchip
CN105633230B (zh) * 2016-03-31 2018-08-14 厦门市三安光电科技有限公司 一种具有AlN量子点的氮化物发光二极管及其制作方法
CN105762241A (zh) * 2016-04-28 2016-07-13 厦门乾照光电股份有限公司 一种增强注入型的发光二极管的外延结构制作方法
CN105742438B (zh) * 2016-04-29 2018-03-02 厦门市三安光电科技有限公司 一种氮化物发光二极管
CN105932123B (zh) * 2016-05-18 2018-11-06 扬州中科半导体照明有限公司 具有低温AlInN插入垒层的氮化物发光二极管外延片及其生产工艺
DE102016208717B4 (de) * 2016-05-20 2022-03-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit erhöhter Effizienz und Verfahren zur Herstellung eines Bauelements
CN105845794B (zh) * 2016-06-02 2018-04-20 厦门市三安光电科技有限公司 一种氮化物发光二极管
WO2018012585A1 (ja) * 2016-07-13 2018-01-18 シャープ株式会社 発光ダイオードおよび発光装置
CN106299047A (zh) * 2016-10-17 2017-01-04 聚灿光电科技股份有限公司 AlInGaN基紫外LED外延结构及其制造方法
KR20180069403A (ko) * 2016-12-15 2018-06-25 삼성전자주식회사 질화 갈륨 기판의 제조 방법
CN106601885A (zh) * 2016-12-16 2017-04-26 厦门乾照光电股份有限公司 一种发光二极管的外延结构及其生长方法
CN106711300B (zh) * 2016-12-27 2019-08-13 南昌大学 一种InGaN基黄色发光二极管结构
WO2018128419A1 (ko) 2017-01-04 2018-07-12 엘지이노텍 주식회사 반도체 소자 및 이를 포함하는 발광소자 패키지
CN106887487B (zh) * 2017-02-21 2019-02-12 武汉大学 一种半导体发光器件及其制备方法
KR102071038B1 (ko) * 2017-03-28 2020-01-29 서울바이오시스 주식회사 질화물 반도체 소자 및 그 제조 방법
JP6712405B2 (ja) * 2017-03-29 2020-06-24 豊田合成株式会社 半導体素子の製造方法
CN106910804B (zh) * 2017-04-27 2019-12-24 南昌大学 一种AlInGaN基多量子阱发光二极管的外延结构
DE102017121484A1 (de) * 2017-06-21 2018-12-27 Osram Opto Semiconductors Gmbh Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers
CN107394021B (zh) * 2017-07-18 2023-04-11 广东省半导体产业技术研究院 一种增强空穴注入的异质结构led器件
CN107180899B (zh) * 2017-07-21 2023-11-14 广东工业大学 一种深紫外led
JP6405430B1 (ja) * 2017-09-15 2018-10-17 日機装株式会社 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法
DE102017124596A1 (de) * 2017-10-20 2019-04-25 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP6744347B2 (ja) * 2018-03-02 2020-08-19 東芝デバイス＆ストレージ株式会社 半導体装置の製造方法
CN108520913B (zh) * 2018-04-25 2019-10-01 黎明职业大学 一种具有强极化空穴注入层的氮化物半导体发光二极管
CN108695417A (zh) * 2018-05-08 2018-10-23 太原理工大学 基于V形坑的无荧光粉GaN基白光LED外延结构及其制备方法
CN108987256B (zh) * 2018-07-10 2022-03-29 中山大学 p型AlGaN半导体材料生长方法
CN112086545B (zh) * 2020-08-25 2022-05-13 华灿光电(苏州）有限公司 氮化镓衬底、氮化镓基发光二极管外延片及其制备方法
CN112164739B (zh) * 2020-09-28 2021-10-08 华灿光电(苏州）有限公司 微型发光二极管外延片的生长方法
CN116391266A (zh) * 2020-11-24 2023-07-04 苏州晶湛半导体有限公司 多波长led结构及其制作方法
CN112786743B (zh) * 2021-01-26 2022-04-01 中国科学院半导体研究所 基于v坑调控的橙黄光led器件及其制备方法
WO2023106886A1 (ko) * 2021-12-10 2023-06-15 서울바이오시스 주식회사 발광 다이오드 및 그것을 갖는 발광 소자
CN116053378B (zh) * 2023-04-03 2023-06-02 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管
CN116230825B (zh) * 2023-05-08 2023-07-11 江西兆驰半导体有限公司 一种氢杂质调控空穴注入层的led外延片及其制备方法

Family Cites Families (160)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306662A (en) 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
JP2917742B2 (ja) 1992-07-07 1999-07-12 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子とその製造方法
EP1313153A3 (en) 1992-07-23 2005-05-04 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
JP2626431B2 (ja) 1992-10-29 1997-07-02 豊田合成株式会社 窒素−３族元素化合物半導体発光素子
JP2681733B2 (ja) 1992-10-29 1997-11-26 豊田合成株式会社 窒素−３族元素化合物半導体発光素子
US5578839A (en) 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
JP2827794B2 (ja) 1993-02-05 1998-11-25 日亜化学工業株式会社 ｐ型窒化ガリウムの成長方法
JP2778405B2 (ja) 1993-03-12 1998-07-23 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
US5432808A (en) 1993-03-15 1995-07-11 Kabushiki Kaisha Toshiba Compound semicondutor light-emitting device
JP2803741B2 (ja) 1993-03-19 1998-09-24 日亜化学工業株式会社 窒化ガリウム系化合物半導体の電極形成方法
EP1450415A3 (en) 1993-04-28 2005-05-04 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device
JP2785254B2 (ja) 1993-06-28 1998-08-13 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
US6005258A (en) 1994-03-22 1999-12-21 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities
JP2956489B2 (ja) 1994-06-24 1999-10-04 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法
JP2666237B2 (ja) 1994-09-20 1997-10-22 豊田合成株式会社 ３族窒化物半導体発光素子
JP3548442B2 (ja) 1994-09-22 2004-07-28 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP3646649B2 (ja) 1994-09-22 2005-05-11 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
US5777350A (en) 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
JP2735057B2 (ja) 1994-12-22 1998-04-02 日亜化学工業株式会社 窒化物半導体発光素子
EP0730044B1 (en) 1995-03-01 2001-06-20 Sumitomo Electric Industries, Limited Boron-aluminum nitride coating and method of producing same
JP3332127B2 (ja) 1995-03-20 2002-10-07 株式会社東芝 半導体素子
JP2890396B2 (ja) 1995-03-27 1999-05-10 日亜化学工業株式会社 窒化物半導体発光素子
JP3250438B2 (ja) 1995-03-29 2002-01-28 日亜化学工業株式会社 窒化物半導体発光素子
JP3890930B2 (ja) 1995-03-29 2007-03-07 日亜化学工業株式会社 窒化物半導体発光素子
JP3511970B2 (ja) 1995-06-15 2004-03-29 日亜化学工業株式会社 窒化物半導体発光素子
JP3135041B2 (ja) 1995-09-29 2001-02-13 日亜化学工業株式会社 窒化物半導体発光素子
KR100267839B1 (ko) 1995-11-06 2000-10-16 오가와 에이지 질화물 반도체 장치
US6151347A (en) 1996-01-17 2000-11-21 Nortel Networks Corporation Laser diode and method of fabrication thereof
JP3209096B2 (ja) 1996-05-21 2001-09-17 豊田合成株式会社 ３族窒化物化合物半導体発光素子
JP4018177B2 (ja) 1996-09-06 2007-12-05 株式会社東芝 窒化ガリウム系化合物半導体発光素子
JP3780887B2 (ja) 1996-09-08 2006-05-31 豊田合成株式会社 半導体発光素子及びその製造方法
JP3304787B2 (ja) 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子及びその製造方法
JP3344257B2 (ja) 1997-01-17 2002-11-11 豊田合成株式会社 窒化ガリウム系化合物半導体及び素子の製造方法
JP3374737B2 (ja) 1997-01-09 2003-02-10 日亜化学工業株式会社 窒化物半導体素子
JP3223832B2 (ja) 1997-02-24 2001-10-29 日亜化学工業株式会社 窒化物半導体素子及び半導体レーザダイオード
JP3506874B2 (ja) 1997-03-24 2004-03-15 豊田合成株式会社 窒素−３族元素化合物半導体発光素子
JP3795624B2 (ja) 1997-03-31 2006-07-12 豊田合成株式会社 窒素−３族元素化合物半導体発光素子
JP3654738B2 (ja) 1997-04-07 2005-06-02 豊田合成株式会社 ３族窒化物半導体発光素子
JPH114020A (ja) 1997-04-15 1999-01-06 Toshiba Corp 半導体発光素子及びその製造方法、並びに半導体発光装置
JP3314666B2 (ja) 1997-06-09 2002-08-12 日亜化学工業株式会社 窒化物半導体素子
JP3813740B2 (ja) 1997-07-11 2006-08-23 Ｔｄｋ株式会社 電子デバイス用基板
JP3505357B2 (ja) 1997-07-16 2004-03-08 株式会社東芝 窒化ガリウム系半導体素子およびその製造方法
JP3822318B2 (ja) 1997-07-17 2006-09-20 株式会社東芝 半導体発光素子及びその製造方法
JP4118371B2 (ja) 1997-12-15 2008-07-16 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 電極に銀を有する窒化物半導体発光装置およびその製造方法ならびに半導体光電子装置
JP4118370B2 (ja) 1997-12-15 2008-07-16 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 反射ｐ電極を有する窒化物半導体発光装置およびその製造方法ならびに半導体光電子装置
EP1928034A3 (en) 1997-12-15 2008-06-18 Philips Lumileds Lighting Company LLC Light emitting device
JP3622562B2 (ja) 1998-03-12 2005-02-23 日亜化学工業株式会社 窒化物半導体発光ダイオード
KR100611352B1 (ko) 1998-03-12 2006-09-27 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
JP3063756B1 (ja) 1998-10-06 2000-07-12 日亜化学工業株式会社 窒化物半導体素子
JP4629178B2 (ja) 1998-10-06 2011-02-09 日亜化学工業株式会社 窒化物半導体素子
JP3063757B1 (ja) 1998-11-17 2000-07-12 日亜化学工業株式会社 窒化物半導体素子
JP3424629B2 (ja) 1998-12-08 2003-07-07 日亜化学工業株式会社 窒化物半導体素子
JP3427265B2 (ja) 1998-12-08 2003-07-14 日亜化学工業株式会社 窒化物半導体素子
US20010042866A1 (en) 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
JP3594826B2 (ja) * 1999-02-09 2004-12-02 パイオニア株式会社 窒化物半導体発光素子及びその製造方法
JP3551101B2 (ja) 1999-03-29 2004-08-04 日亜化学工業株式会社 窒化物半導体素子
US6838705B1 (en) 1999-03-29 2005-01-04 Nichia Corporation Nitride semiconductor device
TW437104B (en) 1999-05-25 2001-05-28 Wang Tien Yang Semiconductor light-emitting device and method for manufacturing the same
JP3748011B2 (ja) 1999-06-11 2006-02-22 東芝セラミックス株式会社 ＧａＮ半導体結晶成長用Ｓｉウエーハ、それを用いたＧａＮ発光素子用ウエーハ及びそれらの製造方法
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
CA2393081C (en) 1999-12-03 2011-10-11 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
TW518767B (en) 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
TWI292227B (en) 2000-05-26 2008-01-01 Osram Opto Semiconductors Gmbh Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan
TW472400B (en) 2000-06-23 2002-01-11 United Epitaxy Co Ltd Method for roughing semiconductor device surface to increase the external quantum efficiency
US6586762B2 (en) 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP3786114B2 (ja) 2000-11-21 2006-06-14 日亜化学工業株式会社 窒化物半導体素子
US6649287B2 (en) 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US6906352B2 (en) 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
WO2002065556A1 (fr) * 2001-02-15 2002-08-22 Sharp Kabushiki Kaisha Element de source lumineuse a semi-conducteur a base de nitrure et son procede de realisation
US6611002B2 (en) 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
US7233028B2 (en) 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
US6630689B2 (en) 2001-05-09 2003-10-07 Lumileds Lighting, U.S. Llc Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US6488767B1 (en) 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
JP3909811B2 (ja) * 2001-06-12 2007-04-25 パイオニア株式会社 窒化物半導体素子及びその製造方法
KR100558890B1 (ko) 2001-07-12 2006-03-14 니치아 카가쿠 고교 가부시키가이샤 반도체 소자
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
EP1471583B1 (en) 2002-01-28 2009-10-07 Nichia Corporation Nitride semiconductor device having support substrate and its manufacturing method
JP4063548B2 (ja) 2002-02-08 2008-03-19 日本碍子株式会社 半導体発光素子
KR101030068B1 (ko) 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
DE10245628A1 (de) 2002-09-30 2004-04-15 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung
TW571449B (en) 2002-12-23 2004-01-11 Epistar Corp Light-emitting device having micro-reflective structure
US7781356B2 (en) 2003-02-12 2010-08-24 Arizona Board of Regents, a Body Corporate Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
GB2398672A (en) 2003-02-19 2004-08-25 Qinetiq Ltd Group IIIA nitride buffer layers
US7001791B2 (en) 2003-04-14 2006-02-21 University Of Florida GaN growth on Si using ZnO buffer layer
JP4267376B2 (ja) 2003-06-04 2009-05-27 新日本製鐵株式会社 遅れ破壊特性の優れた高強度ｐｃ鋼線およびその製造方法
US7622742B2 (en) 2003-07-03 2009-11-24 Epivalley Co., Ltd. III-nitride compound semiconductor light emitting device
JP2005101475A (ja) * 2003-08-28 2005-04-14 Hitachi Cable Ltd Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造方法
CN100453712C (zh) * 2003-08-28 2009-01-21 日立电线株式会社 Ⅲ-ⅴ族氮化物系半导体衬底及其制造方法
JP2005159299A (ja) 2003-10-30 2005-06-16 Sharp Corp 半導体発光素子
US7012016B2 (en) 2003-11-18 2006-03-14 Shangjr Gwo Method for growing group-III nitride semiconductor heterostructure on silicon substrate
US7071498B2 (en) 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
EP1583139A1 (en) 2004-04-02 2005-10-05 Interuniversitaire Microelectronica Centrum vzw ( IMEC) Method for depositing a group III-nitride material on a silicon substrate and device therefor
US7026653B2 (en) 2004-01-27 2006-04-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting devices including current spreading layers
US7115908B2 (en) 2004-01-30 2006-10-03 Philips Lumileds Lighting Company, Llc III-nitride light emitting device with reduced polarization fields
US7345297B2 (en) 2004-02-09 2008-03-18 Nichia Corporation Nitride semiconductor device
DE102005016592A1 (de) 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
TWI252599B (en) * 2004-04-27 2006-04-01 Showa Denko Kk N-type group III nitride semiconductor layered structure
TWI234297B (en) 2004-04-29 2005-06-11 United Epitaxy Co Ltd Light emitting diode and method of the same
US7791061B2 (en) 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
US7575947B2 (en) * 2005-09-09 2009-08-18 The Regents Of The University Of California Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
US7339205B2 (en) 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
US20060002442A1 (en) 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
US7795623B2 (en) 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
US7687827B2 (en) 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same
TWI299914B (en) 2004-07-12 2008-08-11 Epistar Corp Light emitting diode with transparent electrically conductive layer and omni directional reflector
US7737459B2 (en) 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US7247889B2 (en) 2004-12-03 2007-07-24 Nitronex Corporation III-nitride material structures including silicon substrates
US7322732B2 (en) 2004-12-23 2008-01-29 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
US7335920B2 (en) 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
US7446345B2 (en) * 2005-04-29 2008-11-04 Cree, Inc. Light emitting devices with active layers that extend into opened pits
US7365374B2 (en) 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
JP4635727B2 (ja) 2005-06-02 2011-02-23 日立電線株式会社 窒化物半導体発光ダイオード用エピタキシャルウエハの製造方法、窒化物半導体発光ダイオード用エピタキシャルウエハ、及び窒化物半導体発光ダイオード
KR100616686B1 (ko) 2005-06-10 2006-08-28 삼성전기주식회사 질화물계 반도체 장치의 제조 방법
TWI290377B (en) * 2005-06-20 2007-11-21 Global Fiberoptics Inc Light emitting apparatus and fabricated method thereof
EP1750310A3 (en) 2005-08-03 2009-07-15 Samsung Electro-Mechanics Co., Ltd. Omni-directional reflector and light emitting diode adopting the same
CN100338790C (zh) 2005-09-30 2007-09-19 晶能光电（江西）有限公司 在硅衬底上制备铟镓铝氮薄膜的方法
US7547925B2 (en) 2005-11-14 2009-06-16 Palo Alto Research Center Incorporated Superlattice strain relief layer for semiconductor devices
JP4895587B2 (ja) * 2005-11-29 2012-03-14 ローム株式会社 窒化物半導体発光素子
JP5018037B2 (ja) * 2005-12-28 2012-09-05 三菱化学株式会社 ＧａＮ系発光ダイオードの製造方法
JP2007273946A (ja) 2006-03-10 2007-10-18 Covalent Materials Corp 窒化物半導体単結晶膜
US7910945B2 (en) 2006-06-30 2011-03-22 Cree, Inc. Nickel tin bonding system with barrier layer for semiconductor wafers and devices
US7674639B2 (en) 2006-08-14 2010-03-09 Bridgelux, Inc GaN based LED with etched exposed surface for improved light extraction efficiency and method for making the same
US7754514B2 (en) 2006-08-22 2010-07-13 Toyoda Gosei Co., Ltd. Method of making a light emitting element
US7557378B2 (en) 2006-11-08 2009-07-07 Raytheon Company Boron aluminum nitride diamond heterostructure
US7813400B2 (en) 2006-11-15 2010-10-12 Cree, Inc. Group-III nitride based laser diode and method for fabricating same
US7928471B2 (en) 2006-12-04 2011-04-19 The United States Of America As Represented By The Secretary Of The Navy Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor
US7547908B2 (en) 2006-12-22 2009-06-16 Philips Lumilieds Lighting Co, Llc III-nitride light emitting devices grown on templates to reduce strain
US8021904B2 (en) 2007-02-01 2011-09-20 Cree, Inc. Ohmic contacts to nitrogen polarity GaN
TWI323520B (en) * 2007-02-16 2010-04-11 Epistar Corp Light emitting diode device and manufacturing method thereof
GB2447091B8 (en) 2007-03-02 2010-01-13 Photonstar Led Ltd Vertical light emitting diodes
JP5050574B2 (ja) * 2007-03-05 2012-10-17 住友電気工業株式会社 Ｉｉｉ族窒化物系半導体発光素子
JP4962130B2 (ja) * 2007-04-04 2012-06-27 三菱化学株式会社 ＧａＮ系半導体発光ダイオードの製造方法
CN100580905C (zh) 2007-04-20 2010-01-13 晶能光电（江西）有限公司 获得在分割衬底上制造的半导体器件的高质量边界的方法
KR100885190B1 (ko) * 2007-06-29 2009-02-24 우리엘에스티 주식회사 발광소자와 그의 제조방법
US7598108B2 (en) 2007-07-06 2009-10-06 Sharp Laboratories Of America, Inc. Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers
KR101164026B1 (ko) 2007-07-12 2012-07-18 삼성전자주식회사 질화물계 반도체 발광소자 및 그 제조방법
KR100947676B1 (ko) 2007-12-17 2010-03-16 주식회사 에피밸리 3족 질화물 반도체 발광소자
KR101371852B1 (ko) 2007-12-20 2014-03-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US7791101B2 (en) 2008-03-28 2010-09-07 Cree, Inc. Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices
WO2009129353A1 (en) 2008-04-15 2009-10-22 Purdue Research Foundation Metallized silicon substrate for indium gallium nitride light-emitting diode
US8030666B2 (en) 2008-04-16 2011-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Group-III nitride epitaxial layer on silicon substrate
TW201001747A (en) 2008-06-27 2010-01-01 Advanced Optoelectronic Tech Gallium nitride based light emitting device with roughed surface and fabricating method thereof
TW201005997A (en) 2008-07-24 2010-02-01 Advanced Optoelectronic Tech Rough structure of optoeletronics device and fabrication thereof
KR101521259B1 (ko) 2008-12-23 2015-05-18 삼성전자주식회사 질화물 반도체 발광소자 및 그 제조방법
KR20100093872A (ko) 2009-02-17 2010-08-26 삼성엘이디 주식회사 질화물 반도체 발광소자 및 그 제조방법
TWI471913B (zh) 2009-07-02 2015-02-01 Global Wafers Co Ltd Production method of gallium nitride based compound semiconductor
TWI487141B (zh) 2009-07-15 2015-06-01 Advanced Optoelectronic Tech 提高光萃取效率之半導體光電結構及其製造方法
US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
JP4513927B1 (ja) * 2009-09-30 2010-07-28 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
KR101007136B1 (ko) * 2010-02-18 2011-01-10 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
KR101683898B1 (ko) * 2010-06-21 2016-12-20 엘지이노텍 주식회사 발광 소자
KR20120032329A (ko) * 2010-09-28 2012-04-05 삼성전자주식회사 반도체 소자
EP4011302A1 (en) * 2011-01-28 2022-06-15 Surgical Fusion Technologies GmbH Device for fixating a suture anchor with a suture in hard tissue
US8698163B2 (en) * 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
KR20130104974A (ko) * 2012-03-16 2013-09-25 삼성전자주식회사 반도체 발광소자 제조방법

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US20150024531A1 (en) 2015-01-22
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CN103460409A (zh) 2013-12-18
TW201330315A (zh) 2013-07-16
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US8698163B2 (en) 2014-04-15
US20160043275A1 (en) 2016-02-11
US9490392B2 (en) 2016-11-08
TWI557937B (zh) 2016-11-11
KR101608570B1 (ko) 2016-04-01
US8828752B2 (en) 2014-09-09
WO2013049415A2 (en) 2013-04-04
KR20140010064A (ko) 2014-01-23
US20130082273A1 (en) 2013-04-04
US20140106493A1 (en) 2014-04-17
JP2014518014A (ja) 2014-07-24
JP2016119483A (ja) 2016-06-30

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