GB2264578B - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device

Info

Publication number
GB2264578B
GB2264578B GB9209426A GB9209426A GB2264578B GB 2264578 B GB2264578 B GB 2264578B GB 9209426 A GB9209426 A GB 9209426A GB 9209426 A GB9209426 A GB 9209426A GB 2264578 B GB2264578 B GB 2264578B
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
nonvolatile semiconductor
nonvolatile
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9209426A
Other languages
English (en)
Other versions
GB2264578A (en
GB9209426D0 (en
GB2264578A8 (en
Inventor
Jin-Ki Kim
Kang-Deog Suh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9209426D0 publication Critical patent/GB9209426D0/en
Publication of GB2264578A publication Critical patent/GB2264578A/en
Publication of GB2264578A8 publication Critical patent/GB2264578A8/en
Application granted granted Critical
Publication of GB2264578B publication Critical patent/GB2264578B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory
GB9209426A 1992-02-21 1992-05-01 Nonvolatile semiconductor memory device Expired - Fee Related GB2264578B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920002689A KR950000273B1 (ko) 1992-02-21 1992-02-21 불휘발성 반도체 메모리장치 및 그 최적화 기입방법

Publications (4)

Publication Number Publication Date
GB9209426D0 GB9209426D0 (en) 1992-06-17
GB2264578A GB2264578A (en) 1993-09-01
GB2264578A8 GB2264578A8 (en) 1995-09-18
GB2264578B true GB2264578B (en) 1996-01-03

Family

ID=19329334

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9209426A Expired - Fee Related GB2264578B (en) 1992-02-21 1992-05-01 Nonvolatile semiconductor memory device

Country Status (10)

Country Link
US (1) US5299162A (de)
JP (2) JP2872484B2 (de)
KR (1) KR950000273B1 (de)
CN (1) CN1032283C (de)
DE (1) DE4213731C2 (de)
FR (1) FR2687828B1 (de)
GB (1) GB2264578B (de)
IT (1) IT1255108B (de)
RU (1) RU2097842C1 (de)
TW (1) TW204415B (de)

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JP5931236B1 (ja) 2015-02-05 2016-06-08 力晶科技股▲ふん▼有限公司 半導体装置の制御回路及び方法、並びに半導体装置
JP2016162925A (ja) 2015-03-03 2016-09-05 力晶科技股▲ふん▼有限公司 Ｍｏｍキャパシタ回路及び半導体装置
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CN105719693B (zh) * 2016-01-22 2019-09-17 清华大学 Nand存储器的多比特编程方法及装置
JP6677786B1 (ja) 2018-11-20 2020-04-08 力晶積成電子製造股▲ふん▼有限公司Ｐｏｗｅｒｃｈｉｐ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ ページバッファ回路及び不揮発性記憶装置
JP6757447B1 (ja) 2019-06-12 2020-09-16 力晶積成電子製造股▲ふん▼有限公司Ｐｏｗｅｒｃｈｉｐ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ フェイルビット数計数回路及び不揮発性半導体記憶装置
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GB2264578A (en) 1993-09-01
KR930018589A (ko) 1993-09-22
GB9209426D0 (en) 1992-06-17
DE4213731A1 (de) 1993-08-26
CN1032283C (zh) 1996-07-10
JPH09147582A (ja) 1997-06-06
US5299162A (en) 1994-03-29
KR950000273B1 (ko) 1995-01-12
DE4213731C2 (de) 2002-05-08
JP2872484B2 (ja) 1999-03-17
IT1255108B (it) 1995-10-20
JP3228711B2 (ja) 2001-11-12
JPH1186577A (ja) 1999-03-30
FR2687828A1 (fr) 1993-08-27
FR2687828B1 (fr) 1994-04-29
GB2264578A8 (en) 1995-09-18
CN1075572A (zh) 1993-08-25
ITMI921000A1 (it) 1993-10-28
ITMI921000A0 (it) 1992-04-28
RU2097842C1 (ru) 1997-11-27
TW204415B (en) 1993-04-21

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