EP2629341B1 - Dispositif électroluminescent à lumière blanche et dispositif d'éclairage - Google Patents

Dispositif électroluminescent à lumière blanche et dispositif d'éclairage Download PDF

Info

Publication number
EP2629341B1
EP2629341B1 EP11832628.9A EP11832628A EP2629341B1 EP 2629341 B1 EP2629341 B1 EP 2629341B1 EP 11832628 A EP11832628 A EP 11832628A EP 2629341 B1 EP2629341 B1 EP 2629341B1
Authority
EP
European Patent Office
Prior art keywords
phosphor
light
red
emitting device
wavelength conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP11832628.9A
Other languages
German (de)
English (en)
Other versions
EP2629341B8 (fr
EP2629341A1 (fr
EP2629341A4 (fr
Inventor
Hiroaki Sakuta
Yoshihito Satou
Naoto Kijima
Byungchul Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Electronics Co Ltd
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=45938419&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP2629341(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Publication of EP2629341A1 publication Critical patent/EP2629341A1/fr
Publication of EP2629341A4 publication Critical patent/EP2629341A4/fr
Application granted granted Critical
Publication of EP2629341B1 publication Critical patent/EP2629341B1/fr
Publication of EP2629341B8 publication Critical patent/EP2629341B8/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/57—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing manganese or rhenium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
    • C09K11/617—Silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Definitions

  • the present invention relates to a white light-emitting device that is provided with a Mh 4+ -activated fluoride complex phosphor that emits red light, and with an LED (light-emitting diode) element that is an excitation source of the phosphor.
  • Known red phosphors having a narrow-band emission spectrum include Mh 4+ -activated fluoride complex phosphors (Patent Document 1).
  • Light emitted by such phosphors comprises substantially no corrponent of wavelength longer than the main emission peak wavelength (ordinarily, 620 to 640 nm), i.e. substantially no deep-red corrponent of low luminosity factor.
  • such phosphors absorb substantially no light having a wavelength of 490 nm or longer, i.e. substantially no light emitted by a green phosphor or a yellow phosphor.
  • Such properties are deemed to be ideal properties of a red phosphor for white LEDs for illumination where higher efficiency is desirable.
  • Patent Document 3 relates to a semiconductor light-emitting device comprising a light-emitting element emitting excitation light, a green phosphor and an Mn 4+ -activated red phosphor.
  • Patent Document 4 relates to a semiconductor white light emitting device comprising a near UV light emitting diode and a phosphor layer including a blue-based phosphor, a green-based phosphor, a red-based phosphor, and a yellow-based phosphor.
  • the inventors had produced trial white LEDs that emit warm white light, using KSNAF (described in detail further on), which is a Mn 4+ -activated fluoride complex phosphor, and a yellow phosphor YAG:Ce, and had found that the white LED afforded superior luminous efficiency.
  • KSNAF is a Mn 4+ -activated fluoride complex phosphor, and a yellow phosphor YAG:Ce
  • a blue LED element was sealed using a paste resulting from adding powders of KSNAF and YAG:Ce to a liquid silicone resin.
  • KSNAF had to be added to a high concentration in the silicone resin in order to achieve the target chromaticity, and the viscosity of the paste became very high as a result.
  • the present invention provides a technology that allows reducing, without loss of luminous efficiency, the amount of Mn 4+ -activated fluoride complex phosphor that is used, in a white light-emitting device that comprises the Mn 4+ -activated fluoride complex phosphor and an LED element that is an excitation source of the phosphor.
  • the embodiments that are set forth as the gist of the present invention make it possible to reduce the used amount of red phosphor having a narrow-band emission spectrum, for instance a Mn 4+ -activated fluoride complex phosphor, without loss of luminous efficiency, in a white light-emitting device of high color rendering and that is provided with a red phosphor having a narrow-band emission spectrum, for instance a Mn 4+ -activated fluoride complex phosphor or the like, and with an LED element that is an excitation source of the phosphor.
  • a white light-emitting device that boasts high production efficiency, by causing the viscosity of the resin composition that contains the red phosphor having a narrow-band emission spectrum, such as a Mn 4+ -activated fluoride complex phosphor or the like, to lie within an appropriate viscosity range.
  • Duv 1000 duv
  • JIS Z 8725:1999 Method for Determining Distribution Temperature and Color Temperature or Correlated Color Temperature of Light Sources.
  • the present invention provides a white light-emitting device that comprises a phosphor, and an LED element that is an excitation source of the phosphor.
  • the white light-emitting device comprises an LED element that emits blue light, a phosphor that emits yellow light (hereafter also referred to as yellow phosphor) and a phosphor that emits red light (hereafter also referred to as red phosphor) through wavelength conversion upon being excited, directly or indirectly, by light emitted by the LED element, such that white light can be emitted that is combined light of the light respectively emitted by the blue LED element, the phosphor that emits yellow light and the phosphor that emits red light.
  • a phosphor that emits green light (hereafter also referred to as green phosphor), through wavelength conversion when being excited directly or indirectly by light emitted by the LED element, may be used instead of, or in addition to, the yellow phosphor.
  • An LED element having a light-emitting structure formed by various types of semiconductor for instance GaN-based semiconductors, ZnO-based semiconductors, SiC-based semiconductor or the like, can be used in the white light-emitting device according to the present invention.
  • the LED element may be fixed to a package such as a bullet-type package, an SMD-type package or the like, or may be directly fixed to a circuit board, as in the case of a chip-on-board light-emitting device.
  • the way in which the LED element and the phosphors are optically coupled is not limited, and a transparent medium (such as air) may be simply interposed between the LED element and the phosphors; alternatively, an optical element such as a lens, an optical fiber, a waveguide, a reflective mirror or the like may be interposed between the LED element and the phosphors.
  • a transparent medium such as air
  • an optical element such as a lens, an optical fiber, a waveguide, a reflective mirror or the like may be interposed between the LED element and the phosphors.
  • Particulate phosphors are preferably used in the white light-emitting device of the present invention, but the white light-emitting device is not limited thereto, and, for instance, the phosphors may be, in part, a light-emitting ceramic that contains a phosphor phase in the ceramic structure.
  • Particulate phosphors are ordinarily dispersed in a translucent matrix having a polymer as a dispersion medium, in order for the phosphors to be immobilized thereby, but the phosphors may alternatively be deposited, by electrodeposition or some other method, on the surface of an appropriate member.
  • Structures in which phosphor particles are dispersed in a translucent matrix are typically formed by curing a resin paste in which a particulate phosphor has been dispersed.
  • Various structures can be adopted herein, for instance a structure in which the LED element is embedded in a cured product of such a paste, a structure wherein such a cured product covers, in the form of a film, part of the surface of the LED element, or a structure wherein a film comprising such a cured product is disposed at a site spaced apart from the LED element.
  • Fig. 1 illustrates schematically a cross-section of a white light-emitting device according to Embodiment 1 of the present invention.
  • a white light-emitting device 10 illustrated in the figure comprises a blue LED element 12 that is fixed to the bottom face of a recess that is provided in a package 11, and a wavelength conversion layer 13 that seals the blue LED element 12.
  • a particulate yellow phosphor and red phosphor (not shown) are substantially homogeneously dispersed in the interior of the wavelength conversion layer 13.
  • the blue LED element 12 has an emission peak wavelength at 440 to 470 nm.
  • the material and structure of the blue LED element 12 are not particularly limited, but, preferably, the blue LED element 12 is for instance a gallium nitride-based LED element that uses InGaN in a light-emitting layer.
  • the emission peak wavelength of the blue LED element is set in such a manner that the difference vis-à-vis the peak wavelength of the excitation spectrum of the Mn 4+ -activated fluoride complex phosphor that is dispersed in the wavelength conversion layer 13 is no greater than 5 nm.
  • the blue LED element 12 may be provided in the form of a plurality of elements.
  • the blue LED element 12 emits light upon application of current to the blue LED element 12 via the wiring pattern that is provided in the package 11; the yellow phosphor and the red phosphor emit light upon absorption of light emitted by the blue LED element 12.
  • white light resulting from mixing of light of dissimilar colors respectively emitted by the blue LED, the yellow phosphor and the red phosphor, is emitted out of the white light-emitting device 10.
  • the yellow phosphor that is dispersed in the wavelength conversion layer 13 is a phosphor the emission color whereof is classified as ""YELLOW GREEN”, “GREENISH YELLOW”, “YELLOW”, or “YELLOWISH ORANGE” in the xy chromaticity diagram (CIE 1931) depicted in Fig. 8 .
  • the main emission peak wavelength of the yellow phosphor is ordinarily 530 nm or longer, preferably 540 nm or longer, and particularly preferably 550 nm or longer, and is ordinarily 620 nm or shorter, preferably 600 nm or shorter, and particularly preferably 580 nm or shorter.
  • any organic or inorganic yellow phosphor that emits light upon absorption of blue light can be used, but inorganic phosphors are superior in terms of durability.
  • Recommended such phosphors include, for instance, phosphors having Ce 3+ as an activator and a garnet-type oxide crystal as a base, represented by the general formula (Y 1-u ,Gd u ) 3 (Al 1-v Ga v ) 5 O 12 :Ce, Eu (wherein u and v are 0 ⁇ u ⁇ 0.3 and 0 ⁇ v ⁇ 0.5, respectively), for instance (Y,Gd) 3 Al 5 O 12 :Ce, Tb 3 Al 5 O 12 :Ce or the like; or phosphors having Ce 3+ as an activator and having a lanthanum silicon nitride crystal as a base, for instance La 3 Si 6 N 11 : Ce, Ca 1.5x La 3-x Si 6 N 11 :Ce (where x is 0 ⁇ x ⁇ 1) or the like.
  • Yellow phosphors are excited efficiently excited by blue light.
  • Yellow phosphors having Eu 2+ as an activator such as (Ba, Sr, Ca) 2 SiO 4 :Eu, ⁇ -Sialon:Eu or the like, can be excited efficiently not only by blue light, but also by near-ultraviolet light and purple light.
  • green phosphor denotes a phosphor that emits light having a color that is classified as “GREEN” or “YELLOWISH GREEN” in the xy chromaticity diagram (CIE 1931) depicted in Fig. 8 .
  • the main emission peak wavelength of the green phosphor is ordinarily 500 nm or longer, preferably 510 nm or longer, and particularly preferably 520 nm or longer, and is ordinarily 580 nm or shorter, preferably 570 nm or shorter, and particularly preferably 560 nm or shorter.
  • Green phosphors that emits light upon absorption of blue light can be used, but inorganic phosphors are superior in terms of durability.
  • Green phosphors that use Eu 2+ or Ce 3+ as an activator are recommended herein.
  • Green phosphors that use Eu 2+ as an activator include green phosphors that have, as a base, a crystal that comprises an alkaline earth silicate, an alkaline earth silicon oxynitride, or Sialon.
  • green phosphors having an alkaline earth silicate crystal as a base include, for instance, (Ba,Ca,Sr,Mg) 2 SiO 4 :Eu, (Ba,Sr,Ca) 2 (Mg,Zn)Si 2 O 7 :Eu or the like.
  • green phosphors using an alkaline earth silicon oxynitride crystal as a base include, for instance, (Ba,Ca,Sr) 3 Si 6 O 12 N 2 :Eu, (Ba,Ca,Sr) 3 Si 6 O 9 N 4 :Eu, (Ca,Sr,Ba)Si 2 O 2 N 2 :Eu or the like.
  • green phosphors using a Sialon crystal as a base include, for instance, ⁇ -Sialon:Eu, Sr 3 Si 13 Al 3 O 2 N 21 :Eu, Sr 5 Al 5 Si 21 O 2 N 35 :Eu or the like. These green phosphors can be excited efficiently by blue light, and also by near-ultraviolet and purple light.
  • the red phosphor that is dispersed in the wavelength conversion layer 13 is a phosphor the emission color whereof is classified as "RED”, "REDDISH ORANGE” or “ORANGE” in the xy chromaticity diagram (CIE 1931) depicted in Fig. 8 .
  • RED red phosphor
  • REDDISH ORANGE red phosphor the emission color whereof is classified as "RED", "REDDISH ORANGE” or "ORANGE” in the xy chromaticity diagram (CIE 1931) depicted in Fig. 8 .
  • red phosphor there is used a Mn 4+ -activated fluoride complex phosphor and/or a Eu 2+ -activated alkaline earth silicon nitride phosphor.
  • the amount of Mn 4+ -activated fluoride complex phosphor that is added to the wavelength conversion layer 13 can be significantly reduced by using concomitantly a small amount of a Eu 2+ -activated alkaline earth silicon nitride phosphor, as the red phosphor, with substantially no drop in luminous efficiency as compared with an instance where a Mn 4+ -activated fluoride complex phosphor alone is used.
  • This effect is prominent when the white light emitted by the white light-emitting device 10 is warm white light having a significant amount of red component (color temperature ranging from 1600 to 4000 K, preferably from 2500 to 3500 K).
  • Mn 4+ -activated fluoride complex phosphors are phosphors having Mn 4+ as an activator, and having a fluoride complex salt of an alkali metal, an amine or an alkaline earth metal, as a base crystal.
  • the coordination center in the fluoride complex that forms the base crystal is a trivalent metal (B, Al, Ga, In, Y, Sc or lanthanoid), a tetravalent metal (Si, Ge, Sn, Ti, Zr, Re, Hf) or a pentavalent metal (V, P, Nb or Ta), with 5 to 7 fluorine atoms coordinated around the coordination center.
  • a preferred Mn 4+ -activated fluoride complex phosphor is herein A 2 MF 6 :Mn having a hexafluoro complex salt of an alkali metal as a base crystal (A is one or more types selected from among Li, Na, K, Rb, Cs and NH 4 , and M is one or more types selected from among Ge, Si, Sn, Ti and Zr).
  • Mn 4+ -activated fluoride complex phosphor wherein A is one or more types selected from among K (potassium) and Na (sodium), and M is Si (silicon) or Ti (titanium), for instance K 2 SiF 6 :Mn (KSF), KSNAF (K 2 Si 1-x Na x Al x F 6 :Mn) in which some of the constituent elements of KSF (preferably, 10 mol% or less) are replaced by Al and Na, or K 2 TiF 6 :Mn (KTF) .
  • A is one or more types selected from among K (potassium) and Na (sodium)
  • M is Si (silicon) or Ti (titanium)
  • KSF KSF
  • KSNAF K 2 Si 1-x Na x Al x F 6 :Mn
  • KTF K 2 TiF 6 :Mn
  • KSF and KSNAF can be produced in accordance with a method that involves using K 2 SiF 6 , A 3 AlF 6 , NaF, KF, K 2 MnF 6 , KMnO 4 , K 2 MnCl 6 or the like as starting material compounds, adding these starting material compounds to hydrofluoric acid in proper proportions, causing the compounds to dissolve and react, under stirring, and adding thereafter a poor solvent of the phosphor, to cause the phosphor to precipitate (antisolvent precipitation).
  • This method may be carried out in the same way as in the method disclosed in Patent Document 1; also, a high-luminance phosphor having a larger particle size can be obtained by slowing down the addition rate of the poor solvent.
  • Eu 2+ -activated alkaline earth silicon nitride phosphors include, for instance, (Ca,Sr,Ba)AlSiN 3 :Eu, (Ca,Sr,Ba) 2 Si 5 N 8 :Eu, SrAlSi 4 N 7 :Eu, (CaAlSiN 3 ) 1-x (Si (3n+2)/4 N n O) x :Eu and the like.
  • (CaAlSiN 3 ) 1-x (Si (3n+2)/4 N n O) x :Eu has a base in the form of a solid solution crystal of CaAlSiN 3 and Si (3n+2)/4 N n O, and hence is regarded as an alkaline earth silicon nitride phosphor.
  • the maximum peak wavelength of the emission spectrum of the Eu 2+ -activated alkaline earth silicon nitride phosphor ranges from 600 to 630 nm.
  • Such Eu 2+ -activated alkaline earth silicon nitride phosphors are preferred in that they exhibit high color rendering properties and high luminosity factor as red phosphors, and hence can be used for forming a light-emitting device of high luminous efficiency.
  • the peak wavelengths of the Mn 4+ -activated fluoride complex phosphor and the Eu 2+ -activated alkaline earth silicon nitride phosphor that are contained, as red phosphors, in the wavelength conversion layer 13, obey a specific relationship.
  • ⁇ R1 -20 ⁇ R2 ⁇ R1 +30 is satisfied where ⁇ R1 nm denotes the emission peak wavelength of the Mn 4+ -activated fluoride complex phosphor and ⁇ R2 nm denotes the emission peak wavelength of the Eu 2+ -activated alkaline earth silicon nitride phosphor.
  • ⁇ R1 -20 ⁇ R2 ⁇ R1 is satisfied.
  • a red phosphor that satisfies such a requirement exhibits high color rendering properties and high luminosity factor as a red phosphor, and hence a white light-emitting device can be achieved that has high luminous efficiency.
  • a transparent resin can be used as the base material of the wavelength conversion layer 13.
  • resins include, for instance, various types of thermoplastic resins, thermosetting resins and photocurable resins, specific instances whereof include, for instance, methacrylic resins (polymethyl methacrylate or the like), styrene resins (polystyrene, styrene-acrylonitrile copolymers or the like), polycarbonate resins, polyester resins, phenoxy resins, butyral resins, polyvinyl alcohol, cellulose resins (ethyl cellulose, cellulose acetate, cellulose acetate butyrate and the like), epoxy resins, phenolic resins and silicone resins.
  • the base material of the wavelength conversion layer 13, made up of a resin composition, contains at least the Mn 4+ -activated fluoride complex phosphor and the Eu 2+ -activated alkaline earth silicon nitride phosphor.
  • the amount of Mn 4+ -activated fluoride complex phosphor that is added to the wavelength conversion layer 13 can be significantly reduced by using concomitantly a small amount of a Eu 2+ -activated alkaline earth silicon nitride phosphor, as a red phosphor, in the resin composition, with substantially no drop in luminous efficiency as compared with an instance where a Mn 4+ -activated fluoride complex phosphor alone is used.
  • effects are elicited when the content ratio of the Eu 2+ -activated alkaline earth silicon nitride phosphor with respect to the total of the Mn 4+ -activated fluoride complex phosphor and Eu 2+ -activated alkaline earth silicon nitride phosphor contained in the resin composition ranges from 0.5 wt% to 14.0 wt%.
  • the content ratio of the Eu 2+ -activated alkaline earth silicon nitride phosphor is 0.5 wt% or higher, more preferably 1.5 wt% or higher, and yet more preferably 2.0 wt% or higher, and is preferably 14.0 wt% or lower, more preferably 10.0 wt% or lower, yet more preferably 6.0 wt% or lower.
  • the blending proportion of the Mn 4+ -activated fluoride complex phosphor contained in the resin composition ranges preferably from 10 wt% to 50 wt%, more preferably from 15 wt% to 40 wt%, and yet more preferably from 16 wt% to 30 wt%.
  • the blending proportion of the Eu 2+ -activated alkaline earth silicon nitride phosphor contained in the resin composition is preferably 0.1 wt% or higher, more preferably 0.2 wt% or higher, and yet more preferably 0.3 wt% or higher, and is preferably 5.0 wt% or lower, more preferably 3.0 wt% or lower, and yet more preferably 2.0 wt% or lower.
  • the viscosity of the resin composition is an appropriate one. If the viscosity is excessively high, a long time (10 seconds or longer) has to elapse until complete dripping of a target amount of resin composition upon scooping of the resin composition with a spatula and transfer of the resin composition to the package. Also, dispensing may fail to take place at an ordinary pressure using a dispenser, and/or the resin composition may fly off a nozzle if the pressure is increased, all of which detracts from the manufacturing efficiency of the white light-emitting device. If the viscosity is too low, on the other hand, handling becomes difficult during production of the light-emitting device.
  • the base material of the wavelength conversion layer 13 is made up of a resin composition that comprises at least a red phosphor having a narrow-band emission spectrum such that the maximum emission peak ranges from 600 nm to 660 nm and the full width at half maximum of the red emission peak is 20 nm or less, and a red phosphor having a broad-band emission spectrum such that the maximum emission peak ranges from 600 nm to 660 nm, and the full width at half maximum of the red emission peak is 80 nm or more.
  • the amount of red phosphor that has a narrow-band emission spectrum and that is added to the wavelength conversion layer 13 can be significantly reduced by using concomitantly, in the resin composition, also a small amount of the red phosphor having a broad-band emission spectrum, as a red phosphor, in addition to the red phosphor having a narrow-band emission spectrum, with substantially no drop in luminous efficiency as compared with an instance where there is used only the red phosphor having a narrow-band emission spectrum.
  • the content ratio of the red-colored phosphor having a broad-band emission spectrum is preferably 0.5 wt% or higher, more preferably 1.5 wt% or higher, and yet more preferably 2.0 wt% or higher, and is preferably 14.0 wt% or lower, more preferably 10.0 wt% or lower, yet more preferably 6.0 wt% or lower.
  • the blending proportion of the red phosphor having a narrow-band emission spectrum and contained in the resin composition ranges preferably from 10 wt% to 50 wt%, more preferably from 15 wt% to 40 wt%, and yet more preferably from 16 wt% to 30 wt%.
  • the blending proportion of the red-colored phosphor having a broad-band emission spectrum and contained in the resin composition is preferably 0.1 wt% or higher, more preferably 0.2 wt% or higher and yet more preferably 0.3 wt% or higher, and is preferably 5.0 wt% or lower, more preferably 3.0 wt% or lower, and yet more preferably 2.0 wt% or lower.
  • the viscosity of the resin composition is an appropriate one. If the viscosity is excessively high, a long time (10 seconds or longer) has to elapse until complete dripping of a target amount of resin composition upon scooping of the resin composition with a spatula and transfer of the resin composition to the package. Also, dispensing may fail to take place at an ordinary pressure using a dispenser, and/or the resin composition may fly off a nozzle if the pressure is increased, all of which detracts from the manufacturing efficiency of the white light-emitting device. If the viscosity is too low, on the other hand, handling becomes difficult during production of the light-emitting device.
  • the maximum peak wavelength in the emission spectrum of the red phosphor having a broad-band emission spectrum ranges from 600 to 630 nm.
  • Such a broad-band red-colored phosphor is preferred in that the phosphor exhibits high color rendering properties and high luminosity factor, as a red phosphor, and hence can be used for forming a light-emitting device of high luminous efficiency.
  • the peak wavelength of the red phosphor having a narrow-band emission spectrum and the red-colored phosphor having a broad-band emission spectrum that are contained in the wavelength conversion layer 13 obey a specific relationship. Specifically, it is preferable that ⁇ R3 -40 ⁇ R4 ⁇ R3 +10 is satisfied where ⁇ R3 nm denotes the emission peak wavelength of the red phosphor having a narrow-band emission spectrum and ⁇ R4 nm denotes the emission peak wavelength of the red-colored phosphor having a broad-band emission spectrum.
  • High color rendering properties and high luminosity factor as a red phosphor are achieved through incorporation of a red phosphor that satisfies such a requirement. Accordingly, a white light-emitting device can be achieved that has high luminous efficiency.
  • Examples of narrow-band red phosphors having a maximum emission peak ranging from 600 nm to 660 nm and a full width at half maximum, of a red emission peak, of 20 nm or less include, for instance, Mn 4+ -activated fluoride complex phosphors, red emission phosphors for ultraviolet to blue light excitation, characterized by containing Li, represented by the general formula (La 1-x-y ,Eu x ,Ln y ) 2 O 2 S (wherein x and y denote numbers that satisfy 0.02 ⁇ x ⁇ 0.50 and 0 ⁇ y ⁇ 0.50, respectively, and Ln represents at least one type of trivalent rare-earth element from among Y, Gd, Lu, Sc, Sm and Er), and a manganese-activated deep-red (600 nm to 670 nm) phosphor represented by chemical formula (1) below (k-x)MgO ⁇ xAF 2 ⁇ GeO 2 :yMn 4+ ⁇ (1) (wherein k
  • red-colored phosphor having a broad-band emission spectrum such that the maximum emission peak ranges from 600 nm to 660 nm and the full width at half maximum of the red emission peak is 80 nm or more include, for instance, Eu 2+ -activated alkaline earth silicon nitride phosphors, Ba 3 MgSi 2 O 8 :Eu 2+ ,Mn 2+ and the like.
  • a silicon-containing compound for the purpose of heat resistance, light resistance and so forth, is preferably used in the base material of the wavelength conversion layer 13.
  • the term silicon-containing compound denotes a compound having a silicon atom in the molecule.
  • examples thereof include, for instance, organic materials (silicone-based materials) such as polyorganosiloxanes, and inorganic materials such as silicon oxide, silicon nitride, silicon oxynitride and the like.
  • Particularly preferred among the foregoing are silicone-based materials, from the viewpoint of transparency, adhesiveness, ease of handling, and excellent mechanical-thermal stress relaxation characteristics, among other properties.
  • Silicone-based materials ordinarily refer to organic polymers having siloxane bonds in the main chain. Depending on the curing mechanism, such materials may be, for instance, of condensation type, addition type, sol-gel type or photocurable type.
  • the base of the Mn 4+ -activated fluoride complex phosphor is a fluorine-containing compound, and hence the phosphor exhibits ordinarily a low refractive index.
  • the refractive index of phosphors having a hexafluorosilicate base is low.
  • the refractive index of KSF is 1.34
  • the refractive index of (NH 4 ) 2 SiF 6 :Mn is 1.37.
  • the base material of the wavelength conversion layer 13 has a low refractive index, of 1.45 or less, so that the excitation light that strikes the particles of the Mn 4+ -activated fluoride complex phosphor from outside is not significantly reflected at the surface.
  • Examples of recommended base materials include, for instance, dimethyl silicone-based silicone resins.
  • a light-diffusing material may be added to the wavelength conversion layer 13.
  • Fig. 2 illustrates schematically a cross-section of a white light-emitting device according to Embodiment 2 of the present invention.
  • a white light-emitting device 20 illustrated in the figure comprises a blue LED element 22 that is fixed to the bottom face of a recess that is provided in a package 21, a first wavelength conversion layer 23a that is disposed above the blue LED element 22 with an intervening space 24 in between, and a second wavelength conversion layer 23b that is stacked on the first wavelength conversion layer 23a.
  • the first wavelength conversion layer 23a and the second wavelength conversion layer 23b are configured through dispersion of a particulate phosphor in a translucent matrix.
  • the phosphor dispersed in the first wavelength conversion layer 23a comprises a Mn 4+ -activated fluoride complex phosphor that emits red light.
  • the phosphor dispersed in the second wavelength conversion layer 23b comprises a Eu 2+ -activated alkaline earth silicon nitride phosphor that emits red light.
  • a yellow phosphor may be incorporated in either wavelength conversion layer, but in terms of refractive index, the yellow phosphor is preferably incorporated in the wavelength conversion layer that does not contain the Mn 4+ -activated fluoride complex phosphor.
  • a green phosphor may be dispersed instead of, or in addition to, the yellow phosphor.
  • the space 24 may be void, or part thereof may be filled with a translucent filler. Preferably, the entirety of the space 24 is filled with a translucent filler.
  • the same materials as exemplified for the base material of the wavelength conversion layer 13 in Embodiment 1 may be used in the filler.
  • Embodiment 1 The same phosphors as in Embodiment 1 are used in the phosphors contained in the blue LED element 22, the first wavelength conversion layer 23a and the second wavelength conversion layer 23b.
  • the materials exemplified as the base material of the wavelength conversion layer 13 in Embodiment 1 can be used in the translucent matrix of the first wavelength conversion layer 23a and the second wavelength conversion layer 23b.
  • the white light-emitting device 20 can be produced in accordance with the following procedure.
  • thermosetting resin in a case where, for instance a thermosetting resin is used in the base of the translucent matrix of the first wavelength conversion layer 23a and of the second wavelength conversion layer 23b, the sheet molded body A and the sheet molded body B can be strongly bonded to each other through complete curing at the stage of forming the stack sheet, without complete curing of thermosetting resin at the stage of producing the two sheet molded bodies.
  • thermoplastic resin is used as the base of the translucent matrix of the first wavelength conversion layer 23a and of the second wavelength conversion layer 23b, the two sheet molded bodies can be strongly bonded to each other through pressing at a temperature equal to or higher than the softening temperature of thermoplastic resin.
  • the Mn 4+ -activated fluoride complex phosphor has a low refractive index. Therefore, a resin having a low refractive index is preferably used as the base of the translucent matrix of the first wavelength conversion layer 23a.
  • a recommended resin herein is, for instance, a commercially-available dimethyl silicone resin having a refractive index 1.41.
  • the Eu 2+ -activated alkaline earth silicon nitride phosphor is dispersed in the second wavelength conversion layer 23b.
  • the Eu 2+ -activated alkaline earth silicon nitride phosphor is an inorganic phosphor.
  • the yellow phosphor and/or green phosphor that are likewise dispersed are also preferably inorganic phosphors.
  • the refractive index of inorganic phosphors, even when low, is of 1.6 or higher, and is for instance of 1.90 for YAG:Ce.
  • the refractive index of the translucent matrix of the second wavelength conversion layer 23b is higher than that of the translucent matrix of the first wavelength conversion layer 23a, in order for light emitted by the phosphors not to be strongly trapped within phosphor particles.
  • the refractive index of the translucent matrix of the second wavelength conversion layer 23b is higher than 1.50.
  • Epoxy resins having a refractive index ranging from 1.53 to 1.57 are available.
  • Diphenyldimethyl-based and phenylmethyl-based silicone resins having a refractive index of 1.52 are available.
  • Polycarbonate resins, styrene resins and others have likewise refractive indices higher than 1.50.
  • the refractive index of epoxy resins, silicone resins, acrylic resins, polycarbonate resins and the like can be increased up to about 1.8 through addition of high-refractive index inorganic nanoparticles that comprise, for instance, calcium oxide, cerium oxide, hafnium oxide, titanium oxide, zinc oxide, zirconium oxide or the like. If the refractive index of the translucent matrix exceeds the refractive index of the phosphor, however, efficiency may drop in some instances due to reflection of excitation light on the surface of the phosphor.
  • all phosphors, except the Mn 4+ -activated fluoride complex phosphor, are dispersed in the second translucent matrix of high refractive index.
  • the first wavelength conversion layer 23a and the second wavelength conversion layer 23b of Embodiment 2 are formed side by side on the surface of a transparent film 25 that comprises glass or a polymer as depicted in Fig.3 .
  • Fig. 4 illustrates schematically a cross-section of a white light-emitting device according to Embodiment 3 of the present invention.
  • a white light-emitting device 30 illustrated in the figure comprises a blue LED element 32 that is fixed to the bottom face of a recess that is provided in a package 31, a first wavelength conversion layer 33a that is formed so as to seal the blue LED element 32, a second wavelength conversion layer 33b stacked on the first wavelength conversion layer 33a, and a further third wavelength conversion layer 33c stacked on the second wavelength conversion layer 33b.
  • the first wavelength conversion layer 33a, the second wavelength conversion layer 33b and the third wavelength conversion layer 33c are configured through dispersion of a particulate phosphor in a translucent matrix.
  • the phosphor dispersed in the first wavelength conversion layer 33a comprises a Eu 2+ -activated alkaline earth silicon nitride phosphor that emits red light.
  • the phosphor dispersed in the second wavelength conversion layer 33b is a yellow phosphor and/or a green phosphor.
  • the phosphor dispersed in the third wavelength conversion layer 33c is a Mn 4+ -activated fluoride complex phosphor that emits red light.
  • the same phosphors as in Embodiment 1 are used in the phosphors contained in the blue LED element 32, the first wavelength conversion layer 33a, the second wavelength conversion layer 33b and the third wavelength conversion layer 33c.
  • the first wavelength conversion layer 33a, the second wavelength conversion layer 33b and the third wavelength conversion layer 33c are formed through pouring of a resin paste, having the phosphor dispersed therein, into the recess of the package 31, followed by curing.
  • the base of the resin paste is for instance a silicone resin or an epoxy resin.
  • a low-refractive index resin for instance a dimethyl silicone resin, is used as the base in the translucent matrix of the third wavelength conversion layer 33c in which the Mn 4+ -activated fluoride complex phosphor is dispersed.
  • the refractive index of the translucent matrix of the first wavelength conversion layer 33a in which the Eu 2+ -activated alkaline earth silicon nitride phosphor is dispersed is higher than that of the third wavelength conversion layer 33c.
  • an inorganic phosphor is dispersed in the second wavelength conversion layer 33b, and the refractive index of the translucent matrix is preferably higher than that of the third wavelength conversion layer 33c.
  • n 1 >n 2 >n 3 denote respectively the refractive indices of the translucent matrices of the first wavelength conversion layer 33a, the second wavelength conversion layer 33b and the third wavelength conversion layer 33c.
  • One 350 ⁇ m-square InGaN-based blue LED element having an emission peak wavelength of 450 nm was packaged in a 3528SMD-type PPA resin package, and was sealed with a silicone resin composition having a phosphor dispersed therein, to produce a white LED that emitted white light having a correlated color temperature of about 2700 K.
  • the silicone resin that is the base of the composition is of low-refractive index type, with a refractive index ranging from 1.41 to less than 1.45.
  • the KSNAF used in the present experimental example was synthesized according to the following procedure. Firstly, 3.4712 g of K 2 MnF6 and 1.3252 g of NaF were dissolved in a mixed solution of 40 ml of an H 2 SiF 6 aqueous solution (33 wt%) and 160 ml of hydrofluoric acid (47.3 wt%), to prepare a solution (solution A). Next, the solution A was added to a solution (solution B) resulting from dissolving 18.92 g of KHF 2 and 8.16 g of K 3 AlF 6 in 320 ml of hydrofluoric acid (47.3 wt%). The solution B was held at 26°C, and yellow crystals precipitated upon addition, under stirring, of the solution A. The yellow crystals were filtered off using No. 5C filter paper, were washed thrice thereafter with 50 ml of ethanol, and were dried at 150°C for 2 hours, to yield 19.6 g of a phosphor (KSNAF).
  • KSNAF
  • Y 3 Al 5 O 12 :Ce (abbreviation YAG) and La 3 Si 6 N 11 :Ce (abbreviation LSN) were used as yellow phosphors, and KSNAF, KSF and Sr x Ca 1-x AlSiN 3 :Eu (abbreviation SCASN) were used as red phosphors.
  • YAG or LSN was used as a yellow phosphor as in the examples, but only one from among KSNAF or KSF and SCASN was used as the red phosphor.
  • Fig. 5 and Fig. 6 illustrate the emission spectra of KSNAF and SCASN.
  • the emission peak wavelength 617 nm of SCASN is 14 nm shorter than the maximum emission peak wavelength 631 nm of KSNAF, and is positioned at a longer wavelength than the peak wavelength 613 nm of the comparatively broad-emission band of KSNAF on the shorter wavelength side of the maximum emission peak.
  • Table 2 gives the blending ratio of the various phosphors in the silicone resin compositions used to produce the white LEDs according to the examples and comparative examples.
  • Table 2 Phosphor type Phosphor blending ratio [wt%] Emission color Abbreviation Example 1 Yellow YAG 7.5 Red KSNAF 11.5 Red SCASN 1.3 Comparative Example 1 Yellow YAG 6.0 Red KSNAF 38.4 Comparative Example 2 Yellow YAG 7.7 Red SCASN 2.4 Example 2 Yellow LSN 5.5 Red KSF 24.7 Red SCASN 0.5 Comparative Example 3 Yellow LSN 4.4 Red KSF 31.7 Comparative Example 4 Yellow LSN 8.1 Red SCASN 2.4
  • the blending ratio of KSNAF in the silicone resin composition had to be increased to 38.4 wt%, and the blending ratio of KSF to 31.7 wt%, in Comparative Examples 1 and 3 where KSNAF or KSF alone was used as the red phosphor, in order to produce a white LED having a correlated color temperature of about 2700 K.
  • the blending ratio of KSNAF could be reduced to 11.5 wt%, and the blending ratio of KSF to 24.7 wt%, through the concomitant use of a small amount of SCASN.
  • the viscosity of the silicone resin paste used for sealing the white LEDs in Examples 1 and 2 dropped significantly with respect to the silicone resin paste used in Comparative Examples 1 and 3.
  • Table 3 gives the emission characteristics, upon application of a 20 mA current, of the white LEDs of Examples 1 to 2, and Comparative Examples 1 to 4.
  • Fig. 7 illustrates the emission spectrum of the white LED according to Example 1.
  • Table 3 Phosphor Correlated color temperature [K] Chromaticity point (x, y) Ra Conversion efficiency [lm/W] Viscosity Yellow red
  • Dripping of the target amount of the resin composition was complete over a short time (within 5 seconds). Dispensing using a dispenser was possible at ordinary pressure. No spraying out of a nozzle occurred even when the pressure was raised. C: a long time (10 seconds or longer) has to elapse until complete dripping of the target amount of resin composition upon scooping of the resin composition with a spatula and transfer to the package. Dispensing using a dispenser was not possible at an ordinary pressure. Spraying out of a nozzle occurred when the pressure was raised.
  • the conversion efficiency given in Table 3 is a value resulting from dividing the luminous flux of the white LEDs (upon application of 20 mA) by the bare chip output (upon application of 20 mA) of the blue LED element that is mounted in the 3528SMD-type PPA resin package, as measured before sealing with a silicone resin composition.
  • Table 3 shows, the conversion efficiency of the white LEDs according to Examples 1 to 2 and Comparative Examples 1 to 4 are substantially identical.
  • the color rendering properties of the white LEDs, an indicator of which is the average color rendering index Ra are best in Comparative Examples 1 and 3, next in Examples 1 and 2, and poorest in Comparative Examples 2 and 4.
  • the average color rendering index Ra in the white LEDs of Examples 1 and 2 is 82.
  • the white LEDs satisfy the required illumination levels in, for instance, homes, hotels, restaurants, shops, offices, schools, hospitals and factories where precision work is performed.
  • the color rendering properties in the white LEDs of Comparative Examples 2 and 4 where no KSNAF or KSF is used in the red phosphor, fail to reach these levels.
  • the simulation was carried out as follows, using an emission spectrum measured upon application of a 20 mA current to various white LED samples.
  • a synthetic spectrum was created by selecting one type of each white light-emitting device corresponding to the white LED that uses 100% of KSF, as a red phosphor, plus LSN, of Comparative Example 3, and the white LED that uses 100% of SCASN, as a red phosphor, plus LSN, of Comparative Example 4, and by adding the respective emission spectra, at a ratio of n:(10-n).
  • the CIE chromaticity coordinate value (x,y), the correlated color temperature Tcp and the average color rendering index Ra for the created synthetic spectrum were worked out by calculation. Changes in the luminous flux ratio of the two types of white LED were simulated by varying 'n' in the above ratio, in increments of 1, from 1 to 9.
  • the white light-emitting device of the invention of the present application can be used in an illumination device such as light bulbs, downlights, line illumination and the like.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Claims (9)

  1. Dispositif émettant de la lumière blanche (10, 20, 30) comprenant :
    un élément diode électroluminescente (DEL) (12, 22, 32) qui émet de la lumière bleue ;
    et une composition de résine qui contient un luminophore qui émet de la lumière jaune et/ou un luminophore qui émet de la lumière verte par conversion de longueur d'onde de la lumière émise par l'élément DEL qui émet de la lumière bleue, et un luminophore qui émet de la lumière rouge par conversion de longueur d'onde de la lumière émise par l'élément DEL qui émet de la lumière bleue,
    dans lequel l'élément DEL qui émet de la lumière bleue a une longueur d'onde de crête d'émission principale variant de 430 nm à 500 nm,
    le luminophore qui émet de la lumière rouge a une longueur d'onde de crête d'émission principale variant de 620 nm à 640 nm,
    le luminophore qui émet de la lumière jaune a une longueur d'onde de crête d'émission principale variant de 530 nm à 620 nm,
    le luminophore qui émet de la lumière verte a une longueur d'onde de crête d'émission principale variant de 500 nm à 580 nm, et
    le luminophore qui émet de la lumière rouge contient au moins un luminophore à base de complexe de fluorure activé par Mn4+ et un luminophore à base de nitrure de silicium alcalinoterreux activé par Eu2+,
    caractérisé en ce que
    un rapport de teneur du luminophore à base de nitrure de silicium alcalinoterreux activé par Eu2+ par rapport au total du luminophore à base de complexe de fluorure activé par Mn4+ et du luminophore à base de nitrure de silicium alcalinoterreux activé par Eu2+ contenus dans la composition de résine varie de 0,5% en poids à 14,0% en poids.
  2. Dispositif émettant de la lumière blanche selon la revendication 1, dans lequel l'expression λR1 - 20 ≤ λR2 ≤ λR1 + 30 est satisfaite où λR1 nm est une longueur d'onde de crête d'émission du luminophore à base de complexe de fluorure activé par Mn4+ et λR2 nm est une longueur d'onde de crête d'émission du luminophore à base de nitrure de silicium alcalinoterreux activé par Eu2+.
  3. Dispositif émettant de la lumière blanche selon la revendication 2, dans lequel une longueur d'onde de crête maximale dans un spectre d'émission du luminophore à base de nitrure de silicium alcalinoterreux activé par Eu2+ varie de 600 à 630 nm.
  4. Dispositif émettant de la lumière blanche selon les revendications 2 ou 3, dans lequel le luminophore à base de complexe de fluorure activé par Mn4+ est un luminophore A2MF6:Mn, où A représente un ou plusieurs types choisis parmi Li, Na, K, Rb, Cs et NH4, et M représente un ou plusieurs types choisis parmi Ge, Si, Sn, Ti et Zr, ou un luminophore K2Si1-xNaxAlxF6:Mn.
  5. Dispositif émettant de la lumière blanche selon l'une quelconque des revendications 2 à 4, dans lequel le luminophore à base de nitrure de silicium alcalinoterreux activé par Eu2+ est SryCa1-yAlSiN3:Eu.
  6. Dispositif émettant de la lumière blanche selon l'une quelconque des revendications 1 à 5, dans lequel le luminophore qui émet de la lumière jaune est un luminophore (Y1-uGdu)3(Al1-vGav)5O12:Ce,Eu, où u et v sont tels que 0 ≤ u ≤ 0,3 et 0 ≤ v ≤ 0,5, respectivement, ou Ca1,5xLa3-xSi6N11:Ce, où x est tel que 0 ≤ x ≤ 1.
  7. Dispositif émettant de la lumière blanche selon l'une quelconque des revendications 1 à 6, dans lequel le luminophore à base de complexe de fluorure activé par Mn4+ est dispersé dans un produit durci d'une pâte de résine.
  8. Dispositif émettant de la lumière blanche selon la revendication 7, dans lequel une résine de base de la pâte de résine est une résine de silicone.
  9. Dispositif d'éclairage comprenant le dispositif émettant de la lumière blanche (10, 20, 30) selon l'une quelconque des revendications 1 à 8.
EP11832628.9A 2010-10-15 2011-10-14 Dispositif électroluminescent à lumière blanche et dispositif d'éclairage Active EP2629341B8 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010232888 2010-10-15
PCT/JP2011/073698 WO2012050199A1 (fr) 2010-10-15 2011-10-14 Dispositif électroluminescent blanc et dispositif d'éclairage

Publications (4)

Publication Number Publication Date
EP2629341A1 EP2629341A1 (fr) 2013-08-21
EP2629341A4 EP2629341A4 (fr) 2016-03-23
EP2629341B1 true EP2629341B1 (fr) 2020-02-26
EP2629341B8 EP2629341B8 (fr) 2020-04-08

Family

ID=45938419

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11832628.9A Active EP2629341B8 (fr) 2010-10-15 2011-10-14 Dispositif électroluminescent à lumière blanche et dispositif d'éclairage

Country Status (5)

Country Link
US (1) US8890403B2 (fr)
EP (1) EP2629341B8 (fr)
JP (4) JP4974310B2 (fr)
CN (1) CN102986044B (fr)
WO (1) WO2012050199A1 (fr)

Families Citing this family (153)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2432037B1 (fr) 2009-08-26 2019-05-22 Mitsubishi Chemical Corporation Dispositif émettant de la lumière blanche à semi-conducteur
WO2012050199A1 (fr) * 2010-10-15 2012-04-19 三菱化学株式会社 Dispositif électroluminescent blanc et dispositif d'éclairage
CN105357796B (zh) 2011-09-02 2019-02-15 西铁城电子株式会社 照明方法和发光装置
CN103299719B (zh) 2011-09-02 2014-10-22 三菱化学株式会社 照明方法和发光装置
JP5840540B2 (ja) * 2012-03-15 2016-01-06 株式会社東芝 白色照明装置
KR101964418B1 (ko) * 2012-07-02 2019-04-01 엘지이노텍 주식회사 형광체 조성물 및 이를 포함하는 조명 장치
WO2014010211A1 (fr) * 2012-07-10 2014-01-16 株式会社小糸製作所 Module électroluminescent
CN104521016B (zh) * 2012-08-10 2018-07-10 亮锐控股有限公司 磷光体转换发光二极管、灯及照明器
JP2016503579A (ja) * 2012-11-01 2016-02-04 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 色域を有するｌｅｄ系デバイス
JP6292126B2 (ja) * 2012-12-26 2018-03-14 三菱ケミカル株式会社 蛍光体、その蛍光体を用いた蛍光体含有組成物及び発光装置、並びに、その発光装置を用いた画像表示装置及び照明装置
EP2940745B1 (fr) * 2012-12-28 2019-08-28 Shin-Etsu Chemical Co., Ltd. Élément de conversion de longueur d'onde et dispositif électroluminescent
JP6094254B2 (ja) * 2013-02-21 2017-03-15 東芝ライテック株式会社 発光モジュールおよび照明装置
CN106888522B (zh) 2013-03-04 2018-12-07 西铁城电子株式会社 发光装置
US9580648B2 (en) 2013-03-15 2017-02-28 General Electric Company Color stable red-emitting phosphors
US9698314B2 (en) 2013-03-15 2017-07-04 General Electric Company Color stable red-emitting phosphors
DE202013101431U1 (de) * 2013-04-04 2014-07-09 Zumtobel Lighting Gmbh Leuchtvorrichtung zur Erzeugung von Weißlicht
CZ304579B6 (cs) * 2013-04-22 2014-07-16 Crytur Spol. S R. O. Dioda emitující bílé světlo s monokrystalickým luminoforem a způsob výroby
JP2015038960A (ja) * 2013-05-16 2015-02-26 株式会社日本セラテック 発光装置
JPWO2015002139A1 (ja) * 2013-07-03 2017-02-23 デンカ株式会社 蛍光体及び発光装置
TWI596805B (zh) * 2013-07-24 2017-08-21 晶元光電股份有限公司 發光元件及其製作方法
US9399732B2 (en) 2013-08-22 2016-07-26 General Electric Company Processes for preparing color stable manganese-doped phosphors
EP2843717A1 (fr) * 2013-08-27 2015-03-04 Industry-Academic Cooperation Foundation Yonsei University Film de phosphore, dispositif émetteur de lumière et système les utilisant
US10381527B2 (en) 2014-02-10 2019-08-13 Consumer Lighting, Llc Enhanced color-preference LED light sources using yag, nitride, and PFS phosphors
CN105659397B (zh) * 2013-10-15 2018-04-20 夏普株式会社 发光装置
JP6151373B2 (ja) * 2013-11-08 2017-06-21 シャープ株式会社 発光装置、及び照明装置
KR102122359B1 (ko) * 2013-12-10 2020-06-12 삼성전자주식회사 발광장치 제조방법
CN105793389B (zh) 2013-12-13 2018-12-04 通用电气公司 制备颜色稳定的锰掺杂的络合氟化物磷光体的方法
US10451793B2 (en) 2013-12-20 2019-10-22 Signify Holding B.V. Lighting device having plural light-sources and light guide with wavelength converting means and out coupling means
JP6666064B2 (ja) * 2014-09-03 2020-03-13 シチズン電子株式会社 半導体発光素子を含む発光装置、および照明方法
EP3091585A4 (fr) * 2013-12-27 2017-07-26 Citizen Electronics Co., Ltd Dispositif électroluminescent et procédé de conception de dispositif électroluminescent
JP6356018B2 (ja) * 2014-09-03 2018-07-11 シチズン電子株式会社 発光装置及び発光装置の製造方法
WO2015099115A1 (fr) * 2013-12-27 2015-07-02 三菱化学株式会社 Dispositif électroluminescent et procédé de conception de dispositif électroluminescent
JP6191453B2 (ja) * 2013-12-27 2017-09-06 日亜化学工業株式会社 発光装置
JP6356005B2 (ja) * 2013-12-27 2018-07-11 シチズン電子株式会社 発光装置及び発光装置の設計方法
JP6496738B2 (ja) 2013-12-30 2019-04-03 ゼネラル・エレクトリック・カンパニイ 耐湿性蛍光体組成物及び関連する方法
KR101922786B1 (ko) * 2014-01-28 2018-11-27 샤프 가부시키가이샤 발광 다이오드 구동 장치 및 조명 장치
JP6036728B2 (ja) * 2014-02-28 2016-11-30 信越化学工業株式会社 照明装置
US10230022B2 (en) 2014-03-13 2019-03-12 General Electric Company Lighting apparatus including color stable red emitting phosphors and quantum dots
US9590148B2 (en) * 2014-03-18 2017-03-07 GE Lighting Solutions, LLC Encapsulant modification in heavily phosphor loaded LED packages for improved stability
US9680067B2 (en) 2014-03-18 2017-06-13 GE Lighting Solutions, LLC Heavily phosphor loaded LED packages having higher stability
JP6262335B2 (ja) * 2014-04-08 2018-01-17 シャープ株式会社 Ｌｅｄ駆動回路
KR102145207B1 (ko) * 2014-04-17 2020-08-19 삼성전자주식회사 발광장치, 백라이트 유닛 및 디스플레이 장치
CN103980896B (zh) * 2014-04-29 2015-10-07 中国科学院福建物质结构研究所 氟化物荧光粉体材料的制备方法
US9546318B2 (en) 2014-05-01 2017-01-17 General Electric Company Process for preparing red-emitting phosphors
US9512356B2 (en) * 2014-05-01 2016-12-06 General Electric Company Process for preparing red-emitting phosphors
US9660151B2 (en) * 2014-05-21 2017-05-23 Nichia Corporation Method for manufacturing light emitting device
JP6476592B2 (ja) * 2014-05-22 2019-03-06 信越化学工業株式会社 波長変換部材
US9385282B2 (en) 2014-06-12 2016-07-05 General Electric Company Color stable red-emitting phosphors
US9567516B2 (en) 2014-06-12 2017-02-14 General Electric Company Red-emitting phosphors and associated devices
US9371481B2 (en) 2014-06-12 2016-06-21 General Electric Company Color stable red-emitting phosphors
US9376615B2 (en) 2014-06-12 2016-06-28 General Electric Company Color stable red-emitting phosphors
US9929319B2 (en) * 2014-06-13 2018-03-27 General Electric Company LED package with red-emitting phosphors
JP6503929B2 (ja) * 2014-06-30 2019-04-24 日亜化学工業株式会社 半導体発光装置
KR101467808B1 (ko) * 2014-07-14 2014-12-03 엘지전자 주식회사 황색 발광 형광체 및 이를 이용한 발광 소자 패키지
JP2016042579A (ja) * 2014-08-18 2016-03-31 ソウル セミコンダクター カンパニー リミテッド 発光ダイオードパッケージ及びその製造方法
KR102441273B1 (ko) * 2014-08-27 2022-09-08 서울반도체 주식회사 발광 다이오드 패키지 및 그 제조 방법
EP2988340B1 (fr) 2014-08-18 2017-10-11 Seoul Semiconductor Co., Ltd. Conditionnement de diode électroluminescente et procédé de fabrication correspondant
KR102261952B1 (ko) * 2014-08-26 2021-06-08 엘지이노텍 주식회사 형광체 조성물 및 이를 포함하는 발광 소자 패키지
KR102273653B1 (ko) * 2014-08-29 2021-07-06 서울반도체 주식회사 발광 다이오드 패키지
JP2017529567A (ja) * 2014-09-09 2017-10-05 ジーイー・ライティング・ソルーションズ，エルエルシー Ｙａｇ、窒化物及びｐｆｓ蛍光体を用いた色嗜好度の向上したｌｅｄ光源
JP6524860B2 (ja) * 2014-09-30 2019-06-05 日亜化学工業株式会社 発光装置
KR102256594B1 (ko) * 2014-10-07 2021-05-26 서울반도체 주식회사 발광 다이오드 패키지
EP3546544B1 (fr) 2014-10-08 2024-05-01 Seoul Semiconductor Co., Ltd. Dispositif électroluminescent
KR102354843B1 (ko) * 2015-01-16 2022-01-25 서울반도체 주식회사 발광 장치
KR102256593B1 (ko) * 2014-10-08 2021-05-26 서울반도체 주식회사 발광 다이오드 패키지
KR102288377B1 (ko) * 2014-11-20 2021-08-11 서울반도체 주식회사 발광 장치
KR102288404B1 (ko) * 2014-11-20 2021-08-11 서울반도체 주식회사 발광 장치
US9397276B2 (en) 2014-10-17 2016-07-19 Nichia Corporation Light emitting device and resin composition
US9559274B2 (en) 2014-10-17 2017-01-31 Nichia Corporation Light emitting device and resin composition
US10047286B2 (en) 2014-10-27 2018-08-14 General Electric Company Color stable red-emitting phosphors
JP6753051B2 (ja) * 2014-10-31 2020-09-09 日亜化学工業株式会社 発光装置
KR102337406B1 (ko) 2014-12-09 2021-12-13 삼성전자주식회사 불화물 형광체, 불화물 형광체 제조방법, 백색 발광장치, 디스플레이 장치 및 조명장치
US9982190B2 (en) 2015-02-20 2018-05-29 General Electric Company Color stable red-emitting phosphors
CN104810357A (zh) * 2015-04-02 2015-07-29 信利半导体有限公司 一种显示器、背光模组及led光源装置
KR101694702B1 (ko) * 2015-04-21 2017-01-11 우리이앤엘 주식회사 Led 광원 유닛 및 이를 이용한 백라이트 어셈블리
CN107592880A (zh) 2015-05-18 2018-01-16 通用电气公司 用于制备mn掺杂的氟化物磷光体的方法
US10174248B2 (en) 2015-05-18 2019-01-08 General Electric Company Process for improved halide materials
JP6100831B2 (ja) 2015-05-26 2017-03-22 シャープ株式会社 発光装置および画像表示装置
US9871173B2 (en) * 2015-06-18 2018-01-16 Cree, Inc. Light emitting devices having closely-spaced broad-spectrum and narrow-spectrum luminescent materials and related methods
JP6529029B2 (ja) * 2015-06-29 2019-06-12 国立研究開発法人産業技術総合研究所 希土類フリー白色照明装置
RU2018103898A (ru) * 2015-07-02 2019-08-05 Филипс Лайтинг Холдинг Б.В. Светодиодная лампа с люминофором красного свечения с медленным затуханием, приводящим к изменению сст светового выхода
KR102423748B1 (ko) * 2015-07-08 2022-07-22 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광장치
US20190169496A1 (en) * 2015-08-25 2019-06-06 Lg Innotek Co., Ltd. Red phosphor and light emitting device comprising same
KR102472340B1 (ko) * 2015-08-25 2022-11-30 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 적색 형광체 및 이를 포함하는 발광장치
WO2017044380A1 (fr) * 2015-09-10 2017-03-16 Intematix Corporation Dispositifs électroluminescents à lumière blanche convertie au phosphore et composés de photoluminescence pour l'éclairage général et le rétro-éclairage d'affichage
US11901492B2 (en) 2015-09-10 2024-02-13 Intematix Corporation High color rendering white light emitting devices and high color rendering photoluminescence compositions
KR101854114B1 (ko) * 2015-09-23 2018-06-14 한국화학연구원 금속불화물 적색 형광체 및 이를 이용한 발광소자
WO2017052234A1 (fr) * 2015-09-23 2017-03-30 한국화학연구원 Phosphore rouge fluorure métallique et élément électroluminescent l'utilisant
KR102499548B1 (ko) * 2015-11-06 2023-03-03 엘지이노텍 주식회사 발광패키지 및 이를 포함하는 차량용 헤드램프
CN108351444B (zh) * 2015-12-04 2021-10-26 东丽株式会社 荧光体片、使用其的发光体、光源单元、显示器及发光体的制造方法
KR102494856B1 (ko) * 2015-12-18 2023-02-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 형광체, 발광 소자 및 이를 구비한 라이트 유닛
KR102528015B1 (ko) * 2015-12-18 2023-05-10 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 구비한 조명 시스템
CN105609599B (zh) * 2016-02-17 2018-06-29 中国计量学院 一种用于蓝光芯片的封装材料及其白光led封装方法
DE102016202905A1 (de) 2016-02-25 2017-08-31 Tridonic Jennersdorf Gmbh LED Modul mit Leuchtstoff aufweisender Verbindungsschicht
JP2017157621A (ja) * 2016-02-29 2017-09-07 豊田合成株式会社 白色発光装置
US10256374B2 (en) * 2016-03-04 2019-04-09 Nichia Corporation Light emitting device
DE102016104875A1 (de) * 2016-03-16 2017-09-21 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Blitzlichtbeleuchtung für ein tragbares Gerät
JP6304297B2 (ja) 2016-04-06 2018-04-04 日亜化学工業株式会社 発光装置の製造方法
KR102578085B1 (ko) * 2016-04-29 2023-09-14 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 형광체 조성물, 이를 포함하는 발광 소자 패키지 및 조명 장치
JP6800221B2 (ja) * 2016-05-13 2020-12-16 ヌヴォトンテクノロジージャパン株式会社 光源装置及び照明装置
EP3249703B1 (fr) 2016-05-26 2021-08-04 Nichia Corporation Dispositif électroluminescent
JP6477779B2 (ja) * 2016-05-26 2019-03-06 日亜化学工業株式会社 発光装置
CN106010515A (zh) * 2016-06-06 2016-10-12 厦门科煜光电有限公司 一种含氮铝硅化合物红色发光材料及其制备方法
TWI622638B (zh) 2016-12-29 2018-05-01 瑞軒科技股份有限公司 螢光體及其應用之發光裝置與背光模組
CN108269904B (zh) * 2017-01-03 2019-12-27 瑞轩科技股份有限公司 荧光体及其应用的发光装置与背光模块
US10535805B2 (en) 2017-01-13 2020-01-14 Intematix Corporation Narrow-band red phosphors for LED lamps
US20200010760A1 (en) * 2017-03-08 2020-01-09 Panasonic Intellectual Property Management Co., Ltd. Light source device
CN110476112B (zh) * 2017-03-30 2022-07-19 夏普株式会社 显示装置和头戴显示器
WO2018198949A1 (fr) * 2017-04-27 2018-11-01 パナソニックＩｐマネジメント株式会社 Élément convertisseur de longueur d'onde, dispositif émetteur de lumière et dispositif d'éclairage
DE102017122996A1 (de) * 2017-10-04 2019-04-04 Osram Opto Semiconductors Gmbh Leuchtstoffmischung, Konversionselement und optoelektronisches Bauelement
KR102030247B1 (ko) * 2017-10-17 2019-10-08 주식회사 유제이엘 고색재현성 칩 스케일 led 패키지 및 그 제조방법
US10541353B2 (en) 2017-11-10 2020-01-21 Cree, Inc. Light emitting devices including narrowband converters for outdoor lighting applications
CN108048079A (zh) * 2017-11-27 2018-05-18 广东晶科电子股份有限公司 一种红色荧光粉、白光发光二极管及背光模组
JP7286266B2 (ja) * 2017-12-15 2023-06-05 パナソニックＩｐマネジメント株式会社 照明器具
JP2019109330A (ja) * 2017-12-18 2019-07-04 パナソニックＩｐマネジメント株式会社 波長変換デバイス、光源装置、照明装置、及び、投写型映像表示装置
DE102018101428A1 (de) * 2018-01-23 2019-07-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2019134150A (ja) * 2018-01-29 2019-08-08 日亜化学工業株式会社 発光装置
JP6528872B2 (ja) * 2018-03-01 2019-06-12 日亜化学工業株式会社 発光装置の製造方法
DE102018105085B4 (de) * 2018-03-06 2024-05-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil und Leuchtmittel
JP6912728B2 (ja) * 2018-03-06 2021-08-04 日亜化学工業株式会社 発光装置及び光源装置
CN108461603B (zh) * 2018-05-03 2020-03-31 重庆文理学院 一种植物栽培用的led灯珠
WO2019213644A1 (fr) * 2018-05-04 2019-11-07 Intematix Corporation Dispositifs émettant de la lumière blanche à rendu de couleur élevé et compositions de photoluminescence à rendu de couleur élevé
CN108571667A (zh) * 2018-05-16 2018-09-25 厦门通士达照明有限公司 提高led灯中特殊显色指数r9的方法及led灯
KR102567653B1 (ko) * 2018-06-11 2023-08-17 삼성디스플레이 주식회사 백라이트 유닛 및 이를 포함하는 표시 장치
US10685941B1 (en) 2019-07-09 2020-06-16 Intematix Corporation Full spectrum white light emitting devices
US10371325B1 (en) 2018-06-25 2019-08-06 Intematix Corporation Full spectrum white light emitting devices
US10756242B2 (en) 2018-07-30 2020-08-25 Lumileds Llc Light-emitting device with light scatter tuning to control color shift
JP2020053447A (ja) 2018-09-25 2020-04-02 日亜化学工業株式会社 発光モジュール
EP3858947A4 (fr) * 2018-09-26 2021-12-15 Panasonic Intellectual Property Management Co., Ltd. Luminophore complexe de couleur chaude, corps de conversion de longueur d'onde et dispositif électroluminescent
JP6760350B2 (ja) * 2018-10-25 2020-09-23 日亜化学工業株式会社 発光装置
JP2020136121A (ja) * 2019-02-21 2020-08-31 パナソニックＩｐマネジメント株式会社 発光装置、屋外用照明装置及び非常用照明装置
US11205886B2 (en) * 2019-03-12 2021-12-21 Nichia Corporation Method of manufacturing optical member, optical member, and light emitting device
US11781714B2 (en) 2019-03-18 2023-10-10 Bridgelux, Inc. LED-filaments and LED-filament lamps
WO2020190914A1 (fr) * 2019-03-18 2020-09-24 Intematix Corporation Dispositif émettant de la lumière blanche encapsulé comprenant une structure de photoluminescence en couches
US11342311B2 (en) 2019-03-18 2022-05-24 Intematix Corporation LED-filaments and LED-filament lamps utilizing manganese-activated fluoride red photoluminescence material
EP3942607A1 (fr) 2019-03-18 2022-01-26 Intematix Corporation Filament de del
US10468564B1 (en) 2019-03-18 2019-11-05 Intematix Corporation Packaged white light emitting device comprising photoluminescence layered structure
KR20200115761A (ko) * 2019-03-25 2020-10-08 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN111755584A (zh) 2019-03-29 2020-10-09 日亚化学工业株式会社 发光装置
JP7227482B2 (ja) * 2019-03-29 2023-02-22 日亜化学工業株式会社 発光装置
JP7060816B2 (ja) * 2019-03-29 2022-04-27 日亜化学工業株式会社 発光装置
CN110224054B (zh) * 2019-05-10 2020-04-24 深圳清华大学研究院 植物照明用单色led及植物照明灯
US11887973B2 (en) 2019-07-09 2024-01-30 Intematix Corporation Full spectrum white light emitting devices
DE102019210255A1 (de) * 2019-07-11 2021-01-14 Robert Bosch Gmbh Beleuchtungseinrichtung zum Abstrahlen von Licht mehrerer Wellenlängen, optische Analyseeinrichtung zum Beleuchten und Analysieren einer Probe und Verfahren zum Herstellen einer Beleuchtungseinrichtung
WO2021192743A1 (fr) * 2020-03-27 2021-09-30 日亜化学工業株式会社 Dispositif électroluminescent et appareil d'éclairage pourvu dudit dispositif électroluminescent
CN111860987B (zh) * 2020-07-08 2024-05-31 江苏科慧半导体研究院有限公司 混合荧光材料发射光谱预测方法和装置
US11444225B2 (en) 2020-09-08 2022-09-13 Dominant Opto Technologies Sdn Bhd Light emitting diode package having a protective coating
JP7041375B2 (ja) * 2020-09-26 2022-03-24 日亜化学工業株式会社 発光装置
US11329206B2 (en) 2020-09-28 2022-05-10 Dominant Opto Technologies Sdn Bhd Lead frame and housing sub-assembly for use in a light emitting diode package and method for manufacturing the same
CN117425716A (zh) * 2021-05-31 2024-01-19 日亚化学工业株式会社 发光材料及其制造方法
CN113363371A (zh) * 2021-06-03 2021-09-07 旭宇光电（深圳）股份有限公司 全光谱发光二极管及其灯具
KR102445091B1 (ko) * 2021-08-04 2022-09-20 주식회사 디엠엘이디 항균 및 살균 기능을 갖는 led 조명
WO2023188921A1 (fr) * 2022-03-31 2023-10-05 日亜化学工業株式会社 Appareil électroluminescent et appareil d'éclairage

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576756A (en) 1968-06-12 1971-04-27 Mallinckrodt Chemical Works Fluocomplexes of titanium, silicon, tin and germanium, activated by tetravalent manganese
EP1447853B1 (fr) * 2001-10-01 2012-08-08 Panasonic Corporation Element electroluminescent semi-conducteur et dispositif electroluminescent utilisant un tel element
KR100961324B1 (ko) 2002-03-22 2010-06-04 니치아 카가쿠 고교 가부시키가이샤 질화물 형광체와 그 제조 방법 및 발광 장치
US20060214903A1 (en) * 2003-02-21 2006-09-28 Sanyo Electric Co., Ltd. Light-emitting device and display
JP2004335579A (ja) * 2003-05-01 2004-11-25 Fine Rubber Kenkyusho:Kk 発光装置
US7358542B2 (en) 2005-02-02 2008-04-15 Lumination Llc Red emitting phosphor materials for use in LED and LCD applications
US7497973B2 (en) 2005-02-02 2009-03-03 Lumination Llc Red line emitting phosphor materials for use in LED applications
US7648649B2 (en) 2005-02-02 2010-01-19 Lumination Llc Red line emitting phosphors for use in led applications
US20070114562A1 (en) 2005-11-22 2007-05-24 Gelcore, Llc Red and yellow phosphor-converted LEDs for signal applications
KR100745751B1 (ko) 2005-04-20 2007-08-02 삼성전자주식회사 자발광 ｌｃｄ
JP2007204730A (ja) * 2005-09-06 2007-08-16 Sharp Corp 蛍光体及び発光装置
JP2009019163A (ja) * 2007-07-13 2009-01-29 Sharp Corp 発光装置用蛍光体粒子集合体、発光装置、および液晶表示用バックライト装置
JP2009065137A (ja) * 2007-08-09 2009-03-26 Toshiba Lighting & Technology Corp 発光装置
US8299701B2 (en) * 2007-12-27 2012-10-30 Ge Lighting Solutions Llc Lighting device having illumination, backlighting and display applications
CN101925665B (zh) * 2008-01-21 2013-04-03 日亚化学工业株式会社 发光装置
WO2009099211A1 (fr) * 2008-02-07 2009-08-13 Mitsubishi Chemical Corporation Dispositif émettant de la lumière à semi-conducteur, dispositif de rétroéclairage, dispositif d'affichage d'image en couleur et luminophore utilisé pour ces dispositifs
JP2009218422A (ja) 2008-03-11 2009-09-24 Sharp Corp 半導体発光装置および画像表示装置
JP5369486B2 (ja) * 2008-04-28 2013-12-18 豊田合成株式会社 発光装置
JP2010093132A (ja) * 2008-10-09 2010-04-22 Sharp Corp 半導体発光装置およびそれを用いた画像表示装置、液晶表示装置
EP2432037B1 (fr) * 2009-08-26 2019-05-22 Mitsubishi Chemical Corporation Dispositif émettant de la lumière blanche à semi-conducteur
JP2011225822A (ja) 2010-02-26 2011-11-10 Mitsubishi Chemicals Corp ハロリン酸塩蛍光体、それを用いた発光装置及び照明装置
US20120267999A1 (en) 2010-02-26 2012-10-25 Mitsubishi Chemical Corporation Halophosphate phosphor and white light-emitting device
JP2012060097A (ja) 2010-06-25 2012-03-22 Mitsubishi Chemicals Corp 白色半導体発光装置
WO2012050199A1 (fr) * 2010-10-15 2012-04-19 三菱化学株式会社 Dispositif électroluminescent blanc et dispositif d'éclairage
JP5105132B1 (ja) * 2011-06-02 2012-12-19 三菱化学株式会社 半導体発光装置、半導体発光システムおよび照明器具

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Also Published As

Publication number Publication date
WO2012050199A1 (fr) 2012-04-19
CN102986044B (zh) 2015-05-06
JP2012178574A (ja) 2012-09-13
JP6040556B2 (ja) 2016-12-07
JP2012169646A (ja) 2012-09-06
JP2012104814A (ja) 2012-05-31
EP2629341B8 (fr) 2020-04-08
JP4974310B2 (ja) 2012-07-11
US20130264937A1 (en) 2013-10-10
JP2016195284A (ja) 2016-11-17
JP6172364B2 (ja) 2017-08-02
EP2629341A1 (fr) 2013-08-21
EP2629341A4 (fr) 2016-03-23
CN102986044A (zh) 2013-03-20
JP5987424B2 (ja) 2016-09-07
US8890403B2 (en) 2014-11-18

Similar Documents

Publication Publication Date Title
EP2629341B1 (fr) Dispositif électroluminescent à lumière blanche et dispositif d'éclairage
CN110003891B (zh) 发光装置
KR101731741B1 (ko) Ｌｅｄ 용도에 사용되는 적색선 방출 인광체
JP2011029497A (ja) 白色発光装置およびそれを用いた照明装置
US9293668B2 (en) Phosphor-converted single-color LED including a long-wavelength pass filter
TWI394817B (zh) 白色發光裝置
JP6187509B2 (ja) 発光装置及びその製造方法
EP2741339A1 (fr) Élément de conversion de longueur d'onde optique
JP5370047B2 (ja) 白色発光装置のための演色性改善方法および白色発光装置
JP5672985B2 (ja) 半導体白色発光装置
CN209281137U (zh) 波长转换部件、投影机以及照明装置
JP5566263B2 (ja) 発光モジュール
JP6231787B2 (ja) 蛍光体及び発光装置
TW201808844A (zh) 波長轉換構件
JP2006352178A (ja) 発光装置
US20090079327A1 (en) Green light emitting phosphor and light emitting device using the same
JP2011014697A (ja) 白色発光装置
JP6579240B2 (ja) 発光装置
JP6251498B2 (ja) 蛍光体及び発光装置
WO2018037760A1 (fr) Élément de conversion de longueur d'onde

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20130322

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
RA4 Supplementary search report drawn up and despatched (corrected)

Effective date: 20160224

RIC1 Information provided on ipc code assigned before grant

Ipc: C09K 11/57 20060101ALI20160218BHEP

Ipc: C09K 11/61 20060101ALI20160218BHEP

Ipc: H01L 33/50 20100101AFI20160218BHEP

Ipc: C09K 11/08 20060101ALI20160218BHEP

Ipc: C09K 11/77 20060101ALI20160218BHEP

Ipc: C09K 11/59 20060101ALI20160218BHEP

Ipc: C09K 11/64 20060101ALI20160218BHEP

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: MITSUBISHI CHEMICAL CORPORATION

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: MITSUBISHI CHEMICAL CORPORATION

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20190129

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTG Intention to grant announced

Effective date: 20190919

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAJ Information related to disapproval of communication of intention to grant by the applicant or resumption of examination proceedings by the epo deleted

Free format text: ORIGINAL CODE: EPIDOSDIGR1

GRAL Information related to payment of fee for publishing/printing deleted

Free format text: ORIGINAL CODE: EPIDOSDIGR3

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

GRAR Information related to intention to grant a patent recorded

Free format text: ORIGINAL CODE: EPIDOSNIGR71

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

GRAT Correction requested after decision to grant or after decision to maintain patent in amended form

Free format text: ORIGINAL CODE: EPIDOSNCDEC

INTC Intention to grant announced (deleted)
AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

INTG Intention to grant announced

Effective date: 20200121

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: CH

Ref legal event code: PK

Free format text: BERICHTIGUNG B8

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1238709

Country of ref document: AT

Kind code of ref document: T

Effective date: 20200315

RAP2 Party data changed (patent owner data changed or rights of a patent transferred)

Owner name: MITSUBISHI CHEMICAL CORPORATION

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

RIN2 Information on inventor provided after grant (corrected)

Inventor name: SATOU, YOSHIHITO

Inventor name: KIJIMA, NAOTO

Inventor name: SAKUTA, HIROAKI

Inventor name: HONG, BYUNGCHUL

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602011065288

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200526

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20200226

REG Reference to a national code

Ref country code: DE

Ref legal event code: R082

Ref document number: 602011065288

Country of ref document: DE

Representative=s name: HOFFMANN - EITLE PATENT- UND RECHTSANWAELTE PA, DE

Ref country code: DE

Ref legal event code: R081

Ref document number: 602011065288

Country of ref document: DE

Owner name: CITIZEN ELECTRONICS CO., LTD., FUJIYOSHIDA-SHI, JP

Free format text: FORMER OWNER: MITSUBISHI CHEMICAL CORPORATION, TOKYO, JP

Ref country code: DE

Ref legal event code: R081

Ref document number: 602011065288

Country of ref document: DE

Owner name: NICHIA CORPORATION, ANAN-SHI, JP

Free format text: FORMER OWNER: MITSUBISHI CHEMICAL CORPORATION, TOKYO, JP

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200527

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200626

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200526

RAP2 Party data changed (patent owner data changed or rights of a patent transferred)

Owner name: CITIZEN ELECTRONICS CO., LTD.

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200719

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1238709

Country of ref document: AT

Kind code of ref document: T

Effective date: 20200226

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602011065288

Country of ref document: DE

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

26N No opposition filed

Effective date: 20201127

REG Reference to a national code

Ref country code: DE

Ref legal event code: R082

Ref document number: 602011065288

Country of ref document: DE

Representative=s name: HOFFMANN - EITLE PATENT- UND RECHTSANWAELTE PA, DE

Ref country code: DE

Ref legal event code: R081

Ref document number: 602011065288

Country of ref document: DE

Owner name: NICHIA CORPORATION, ANAN-SHI, JP

Free format text: FORMER OWNER: CITIZEN ELECTRONICS CO., LTD., FUJIYOSHIDA-SHI, YAMANASHI-KEN, JP

Ref country code: DE

Ref legal event code: R081

Ref document number: 602011065288

Country of ref document: DE

Owner name: CITIZEN ELECTRONICS CO., LTD., FUJIYOSHIDA-SHI, JP

Free format text: FORMER OWNER: CITIZEN ELECTRONICS CO., LTD., FUJIYOSHIDA-SHI, YAMANASHI-KEN, JP

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20201014

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201014

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20201031

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201031

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201031

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201014

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201031

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201031

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201014

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200226

REG Reference to a national code

Ref country code: DE

Ref legal event code: R081

Ref document number: 602011065288

Country of ref document: DE

Owner name: NICHIA CORPORATION, ANAN-SHI, JP

Free format text: FORMER OWNERS: CITIZEN ELECTRONICS CO., LTD., FUJIYOSHIDA-SHI, YAMANASHI-KEN, JP; NICHIA CORPORATION, ANAN-SHI, TOKUSHIMA, JP

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20231227

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20230830

Year of fee payment: 13