DE69930135T2 - Pseudomorphe transistoren mit hoher elektronenbeweglichkeit - Google Patents

Pseudomorphe transistoren mit hoher elektronenbeweglichkeit Download PDF

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Publication number
DE69930135T2
DE69930135T2 DE69930135T DE69930135T DE69930135T2 DE 69930135 T2 DE69930135 T2 DE 69930135T2 DE 69930135 T DE69930135 T DE 69930135T DE 69930135 T DE69930135 T DE 69930135T DE 69930135 T2 DE69930135 T2 DE 69930135T2
Authority
DE
Germany
Prior art keywords
layer
etch
etchant
etch stop
stop layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69930135T
Other languages
German (de)
English (en)
Other versions
DE69930135D1 (de
Inventor
K. Elsa Wayland TONG
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skyworks Solutions Inc
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of DE69930135D1 publication Critical patent/DE69930135D1/de
Application granted granted Critical
Publication of DE69930135T2 publication Critical patent/DE69930135T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0124—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
    • H10D64/0125—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors characterised by the sectional shape, e.g. T or inverted T

Landscapes

  • Junction Field-Effect Transistors (AREA)
DE69930135T 1998-09-29 1999-09-15 Pseudomorphe transistoren mit hoher elektronenbeweglichkeit Expired - Lifetime DE69930135T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US163124 1998-09-29
US09/163,124 US6087207A (en) 1998-09-29 1998-09-29 Method of making pseudomorphic high electron mobility transistors
PCT/US1999/021135 WO2000019512A1 (en) 1998-09-29 1999-09-15 Pseudomorphic high electron mobility transistors

Publications (2)

Publication Number Publication Date
DE69930135D1 DE69930135D1 (de) 2006-04-27
DE69930135T2 true DE69930135T2 (de) 2006-12-07

Family

ID=22588591

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69930135T Expired - Lifetime DE69930135T2 (de) 1998-09-29 1999-09-15 Pseudomorphe transistoren mit hoher elektronenbeweglichkeit

Country Status (6)

Country Link
US (1) US6087207A (https=)
EP (2) EP1131849B1 (https=)
JP (1) JP4874461B2 (https=)
AU (1) AU5923899A (https=)
DE (1) DE69930135T2 (https=)
WO (1) WO2000019512A1 (https=)

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US6703638B2 (en) * 2001-05-21 2004-03-09 Tyco Electronics Corporation Enhancement and depletion-mode phemt device having two ingap etch-stop layers
JP4371668B2 (ja) * 2003-02-13 2009-11-25 三菱電機株式会社 半導体装置
US20050083982A1 (en) * 2003-10-20 2005-04-21 Binoptics Corporation Surface emitting and receiving photonic device
JP2008511980A (ja) * 2004-08-31 2008-04-17 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 層構造に多段リセスを形成する方法、及び多段リセスゲートを具備した電界効果トランジスタ
US20060175631A1 (en) * 2005-02-04 2006-08-10 Raytheon Company Monolithic integrated circuit having enhanced breakdown voltage
JP2008060397A (ja) * 2006-08-31 2008-03-13 Nec Electronics Corp 電界効果トランジスタおよびその製造方法
KR100853166B1 (ko) * 2007-01-30 2008-08-20 포항공과대학교 산학협력단 전계효과형 화합물 반도체 소자의 제조 방법
JP2010135590A (ja) * 2008-12-05 2010-06-17 Renesas Electronics Corp 電界効果トランジスタ
GB201112330D0 (en) 2011-07-18 2011-08-31 Epigan Nv Method for growing III-V epitaxial layers and semiconductor structure
US8901606B2 (en) 2012-04-30 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layer
US8853743B2 (en) 2012-11-16 2014-10-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Pseudomorphic high electron mobility transistor comprising doped low temperature buffer layer
TW201619289A (zh) * 2014-09-26 2016-06-01 Sekisui Chemical Co Ltd 難燃性胺酯樹脂組成物
US9461159B1 (en) 2016-01-14 2016-10-04 Northrop Grumman Systems Corporation Self-stop gate recess etching process for semiconductor field effect transistors
CN110326090A (zh) * 2017-02-27 2019-10-11 三菱电机株式会社 半导体装置及其制造方法
US11145735B2 (en) * 2019-10-11 2021-10-12 Raytheon Company Ohmic alloy contact region sealing layer
CN113363255B (zh) * 2021-06-02 2024-02-27 厦门市三安集成电路有限公司 一种半导体器件及其制备方法
CN113363254B (zh) * 2021-06-02 2024-06-18 厦门市三安集成电路有限公司 一种半导体器件及其制备方法

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JPH023938A (ja) * 1988-06-20 1990-01-09 Mitsubishi Electric Corp 電界効果トランジスタ
JP2691619B2 (ja) * 1989-07-19 1997-12-17 富士通株式会社 化合物半導体装置及びその製造方法
JPH04167439A (ja) * 1990-10-30 1992-06-15 Mitsubishi Electric Corp 半導体装置の製造方法
JP2523985B2 (ja) * 1990-11-16 1996-08-14 三菱電機株式会社 半導体装置の製造方法
JPH0582560A (ja) * 1991-09-20 1993-04-02 Sony Corp 電界効果型トランジスタの製造方法
US5212704A (en) * 1991-11-27 1993-05-18 At&T Bell Laboratories Article comprising a strained layer quantum well laser
US5352909A (en) * 1991-12-19 1994-10-04 Nec Corporation Field effect transistor and method for manufacturing the same
US5508535A (en) * 1992-01-09 1996-04-16 Mitsubishi Denki Kabushiki Kaisha Compound semiconductor devices
JP2978972B2 (ja) * 1992-03-12 1999-11-15 富士通株式会社 半導体装置の製造方法
JP3129510B2 (ja) * 1992-03-19 2001-01-31 富士通株式会社 ＩｎＧａＰのエッチング方法及びそのエッチング方法を用いた半導体装置の製造方法
JPH06196504A (ja) * 1992-12-24 1994-07-15 Rohm Co Ltd 半導体装置およびその製造方法
US5364816A (en) * 1993-01-29 1994-11-15 The United States Of America As Represented By The Secretary Of The Navy Fabrication method for III-V heterostructure field-effect transistors
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JP3294411B2 (ja) * 1993-12-28 2002-06-24 富士通株式会社 半導体装置の製造方法
JPH07202173A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd 半導体装置及びその製造方法
JP2581452B2 (ja) * 1994-06-06 1997-02-12 日本電気株式会社 電界効果トランジスタ
JPH0831844A (ja) * 1994-07-11 1996-02-02 Murata Mfg Co Ltd 半導体装置の製造方法
JP2685032B2 (ja) * 1995-06-09 1997-12-03 日本電気株式会社 電界効果トランジスタ及びその製造方法
JP2716015B2 (ja) * 1995-07-27 1998-02-18 日本電気株式会社 電界効果トランジスタの製造方法
JP3616447B2 (ja) * 1996-02-27 2005-02-02 富士通株式会社 半導体装置
JPH09246532A (ja) * 1996-03-14 1997-09-19 Fujitsu Ltd 化合物半導体装置の製造方法
JP2780704B2 (ja) * 1996-06-14 1998-07-30 日本電気株式会社 半導体装置の製造方法
JPH1050729A (ja) * 1996-07-29 1998-02-20 Mitsubishi Electric Corp 半導体装置，及びその製造方法
JPH1056168A (ja) * 1996-08-08 1998-02-24 Mitsubishi Electric Corp 電界効果トランジスタ
JP3377022B2 (ja) * 1997-01-23 2003-02-17 日本電信電話株式会社 ヘテロ接合型電界効果トランジスタの製造方法
AU1600799A (en) * 1997-11-26 1999-06-15 Whitaker Corporation, The Inxga1-xp stop-etch layer for selective recess of gallium arsenide-based eptitaxial field effect transistors and process therefor

Also Published As

Publication number Publication date
JP4874461B2 (ja) 2012-02-15
EP1131849B1 (en) 2006-03-01
DE69930135D1 (de) 2006-04-27
WO2000019512A1 (en) 2000-04-06
EP1630860A2 (en) 2006-03-01
US6087207A (en) 2000-07-11
WO2000019512A8 (en) 2000-09-28
JP2002526922A (ja) 2002-08-20
EP1131849A4 (en) 2002-10-28
EP1131849A2 (en) 2001-09-12
AU5923899A (en) 2000-04-17
EP1630860A3 (en) 2008-03-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SKYWORKS SOLUTIONS INC., WOBURN, MASS., US

8327 Change in the person/name/address of the patent owner

Owner name: SKYWORKS SOLUTIONS, INC., WOBURN, MASS., US