DE69015961T2 - Flüssigkristallanzeigeelement mit aktiver Matrix. - Google Patents

Flüssigkristallanzeigeelement mit aktiver Matrix.

Info

Publication number
DE69015961T2
DE69015961T2 DE69015961T DE69015961T DE69015961T2 DE 69015961 T2 DE69015961 T2 DE 69015961T2 DE 69015961 T DE69015961 T DE 69015961T DE 69015961 T DE69015961 T DE 69015961T DE 69015961 T2 DE69015961 T2 DE 69015961T2
Authority
DE
Germany
Prior art keywords
display element
matrix
liquid
active matrix
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69015961T
Other languages
English (en)
Other versions
DE69015961D1 (de
Inventor
Yasuhiro Ukai
Tomihisa Sunata
Teizo Yukawa
Toshiya Inada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Kobe KK
Original Assignee
Hosiden Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hosiden Corp filed Critical Hosiden Corp
Publication of DE69015961D1 publication Critical patent/DE69015961D1/de
Application granted granted Critical
Publication of DE69015961T2 publication Critical patent/DE69015961T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
DE69015961T 1989-10-20 1990-10-19 Flüssigkristallanzeigeelement mit aktiver Matrix. Expired - Fee Related DE69015961T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27342089A JP2764139B2 (ja) 1989-10-20 1989-10-20 アクティブマトリックス液晶表示素子

Publications (2)

Publication Number Publication Date
DE69015961D1 DE69015961D1 (de) 1995-02-23
DE69015961T2 true DE69015961T2 (de) 1995-06-22

Family

ID=17527653

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69015961T Expired - Fee Related DE69015961T2 (de) 1989-10-20 1990-10-19 Flüssigkristallanzeigeelement mit aktiver Matrix.

Country Status (5)

Country Link
US (1) US5068748A (de)
EP (1) EP0423824B1 (de)
JP (1) JP2764139B2 (de)
KR (1) KR910008462A (de)
DE (1) DE69015961T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10228517B4 (de) * 2001-07-10 2007-07-19 Lg. Philips Lcd Co., Ltd. Schutzschaltung und -verfahren gegen elektrostatische Entladung in einem TFT-LCD

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219771A (en) * 1988-07-30 1993-06-15 Fuji Xerox Co., Ltd. Method of producing a thin film transistor device
JPH02137828A (ja) * 1988-11-18 1990-05-28 Seiko Instr Inc 電気光学装置の入力保護装置
JPH04233514A (ja) * 1990-12-28 1992-08-21 Sharp Corp アクティブマトリクス基板
JP3071851B2 (ja) * 1991-03-25 2000-07-31 株式会社半導体エネルギー研究所 電気光学装置
US5220443A (en) * 1991-04-29 1993-06-15 Nec Corporation Matrix wiring substrate and active matrix display having non-linear resistance elements for electrostatic discharge protection
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
JPH05142554A (ja) * 1991-11-25 1993-06-11 Matsushita Electric Ind Co Ltd アクテイブマトリクス基板
JP3357699B2 (ja) * 1992-02-21 2002-12-16 株式会社東芝 液晶表示装置
DE69319760T2 (de) * 1992-02-21 1999-02-11 Toshiba Kawasaki Kk Flüssigkristallanzeigevorrichtung
US5233448A (en) * 1992-05-04 1993-08-03 Industrial Technology Research Institute Method of manufacturing a liquid crystal display panel including photoconductive electrostatic protection
US5497146A (en) * 1992-06-03 1996-03-05 Frontec, Incorporated Matrix wiring substrates
JP2766442B2 (ja) * 1992-06-03 1998-06-18 株式会社フロンテック マトリクス配線基板
US5313319A (en) * 1992-06-17 1994-05-17 General Electric Company Active array static protection devices
NL194873C (nl) * 1992-08-13 2003-05-06 Oki Electric Ind Co Ltd Dunnefilmtransistorenreeks en daarvan gebruikmakende vloeibare kristalweergeefinrichting.
JPH06186590A (ja) * 1992-12-21 1994-07-08 Sharp Corp アクティブマトリクス型液晶表示パネル
GB9226890D0 (en) * 1992-12-23 1993-02-17 Philips Electronics Uk Ltd An imaging device
KR940022124A (ko) * 1993-03-24 1994-10-20 이헌조 액정표시장치
US5355251A (en) * 1993-04-28 1994-10-11 Dell U.S.A. L.P. Liquid crystal display device with octagonal cell providing increased wiring density
JPH06332011A (ja) * 1993-05-18 1994-12-02 Sony Corp 半導体集合基板及び半導体装置
JPH081502B2 (ja) * 1993-06-21 1996-01-10 インターナショナル・ビジネス・マシーンズ・コーポレイション 液晶表示装置
JP3290772B2 (ja) * 1993-08-18 2002-06-10 株式会社東芝 表示装置
JP2579427B2 (ja) * 1993-11-10 1997-02-05 インターナショナル・ビジネス・マシーンズ・コーポレイション 表示装置及び表示装置の駆動方法
JP3089448B2 (ja) * 1993-11-17 2000-09-18 松下電器産業株式会社 液晶表示用パネルの製造方法
JP3029531B2 (ja) * 1994-03-02 2000-04-04 シャープ株式会社 液晶表示装置
US5682211A (en) * 1994-04-28 1997-10-28 Xerox Corporation Integrated dark matrix for an active matrix liquid crystal display with pixel electrodes overlapping gate data lines
JPH0822024A (ja) * 1994-07-05 1996-01-23 Mitsubishi Electric Corp アクティブマトリクス基板およびその製法
GB9416899D0 (en) * 1994-08-20 1994-10-12 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin-film circuitry
US5657139A (en) * 1994-09-30 1997-08-12 Kabushiki Kaisha Toshiba Array substrate for a flat-display device including surge protection circuits and short circuit line or lines
JP2715936B2 (ja) * 1994-09-30 1998-02-18 日本電気株式会社 薄膜トランジスタ型液晶表示装置とその製造方法
US5841490A (en) * 1994-10-31 1998-11-24 Kyocera Corporation Liquid crystal display device and its fabricating method
KR0145902B1 (ko) * 1995-01-27 1998-09-15 김광호 박막트랜지스터 액정디스플레이 소자의 저항부 및 그 제조방법
US5668032A (en) * 1995-07-31 1997-09-16 Holmberg; Scott H. Active matrix ESD protection and testing scheme
JP3007025B2 (ja) * 1995-08-25 2000-02-07 シャープ株式会社 アクティブマトリクス型液晶表示装置及びその製造方法
JP3261699B2 (ja) * 1995-10-03 2002-03-04 セイコーエプソン株式会社 アクティブマトリクス基板
US5835177A (en) * 1995-10-05 1998-11-10 Kabushiki Kaisha Toshiba Array substrate with bus lines takeout/terminal sections having multiple conductive layers
JPH09251169A (ja) * 1996-03-15 1997-09-22 Toshiba Corp 表示装置、アクティブマトリクス型表示装置およびその製造方法
JPH1020336A (ja) 1996-07-02 1998-01-23 Sharp Corp アクティブマトリクス基板およびその製造方法
JP3149793B2 (ja) * 1996-07-22 2001-03-26 日本電気株式会社 反射型液晶表示装置及びその製造方法
JPH10161142A (ja) * 1996-11-28 1998-06-19 Sharp Corp 液晶表示装置
US5973658A (en) * 1996-12-10 1999-10-26 Lg Electronics, Inc. Liquid crystal display panel having a static electricity prevention circuit and a method of operating the same
US5736732A (en) * 1996-12-23 1998-04-07 General Electric Company Induced charge prevention in semiconductor imaging devices
KR100252308B1 (ko) * 1997-01-10 2000-04-15 구본준, 론 위라하디락사 박막트랜지스터 어레이
JP3838722B2 (ja) * 1997-01-13 2006-10-25 ローム株式会社 強制動作機能付き制御回路を有する半導体装置
KR100363307B1 (ko) * 1997-01-13 2002-11-30 하이닉스 세미컨덕터 아메리카 인코포레이티드 성능이 개선된 액티브 매트릭스 이에스디 보호 및 테스트 방법
JPH10268794A (ja) * 1997-03-26 1998-10-09 Sharp Corp 表示パネル
JPH10288950A (ja) * 1997-04-14 1998-10-27 Casio Comput Co Ltd 液晶表示装置
US6734925B1 (en) 1998-12-07 2004-05-11 Samsung Electronics Co., Ltd. Multiple testing bars for testing liquid crystal display and method thereof
USRE41873E1 (en) 1997-05-12 2010-10-26 Samsung Electronics Co., Ltd. Multiple testing bars for testing liquid crystal display and method thereof
US6337722B1 (en) * 1997-08-07 2002-01-08 Lg.Philips Lcd Co., Ltd Liquid crystal display panel having electrostatic discharge prevention circuitry
KR100271038B1 (ko) * 1997-09-12 2000-11-01 구본준, 론 위라하디락사 전기적 특성 검사를 위한 단락 배선의 제조 방법 및 그 단락 배선을 포함하는 액티브 기판의 구조(a method for manufacturing a shorting bar probing an electrical state and a structure of an lcd comprising the shorting bar)
US6587160B2 (en) * 1997-10-14 2003-07-01 Samsung Electronics Co., Ltd. Liquid crystal displays
US8310262B2 (en) 1997-12-05 2012-11-13 Samsung Electronics Co., Ltd. Multiple testing bars for testing liquid crystal display and method thereof
JP4057127B2 (ja) * 1998-02-19 2008-03-05 セイコーエプソン株式会社 アクティブマトリックス基板及びアクティブマトリックス基板の製造方法並びに液晶装置
JP2000019556A (ja) * 1998-06-29 2000-01-21 Hitachi Ltd 液晶表示装置
JP4632383B2 (ja) * 1998-08-31 2011-02-16 キヤノン株式会社 光電変換装置に用いられる半導体装置
US6246074B1 (en) * 1998-09-30 2001-06-12 Lg.Philips Lcd Co., Ltd. Thin film transistor substrate with testing circuit
TW457690B (en) * 1999-08-31 2001-10-01 Fujitsu Ltd Liquid crystal display
JP4388648B2 (ja) 1999-10-29 2009-12-24 シャープ株式会社 薄膜トランジスタ、液晶表示装置、およびその製造方法
US6370003B1 (en) 1999-11-30 2002-04-09 Welch Allyn Data Collections, Inc. Electrostatic charge resistant instrument system
KR100604270B1 (ko) * 2000-09-19 2006-07-24 엘지.필립스 엘시디 주식회사 액정 표시소자
KR100769160B1 (ko) * 2000-12-29 2007-10-23 엘지.필립스 엘시디 주식회사 액정표시장치의 테스트 패드
GB0100733D0 (en) 2001-01-11 2001-02-21 Koninkl Philips Electronics Nv A method of manufacturing an active matrix substrate
KR100870013B1 (ko) * 2002-08-27 2008-11-21 삼성전자주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
JP2004341465A (ja) * 2003-05-14 2004-12-02 Obayashi Seiko Kk 高品質液晶表示装置とその製造方法
CN1319168C (zh) * 2003-11-04 2007-05-30 友达光电股份有限公司 静电放电保护机构及应用此机构的液晶显示板
US7297979B2 (en) 2003-12-18 2007-11-20 Samsung Electronics Co., Ltd. Thin film transistor array panel for a display
US8355015B2 (en) * 2004-05-21 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic device including a diode electrically connected to a signal line
US7532264B2 (en) * 2004-10-28 2009-05-12 Dpix Llc On-substrate ESD protection for array based image sensors
US7477333B2 (en) * 2005-08-30 2009-01-13 Chunghwa Picture Tubes, Ltd. Liquid crystal display panel with electrostatic discharge protection
TWI267988B (en) * 2005-08-31 2006-12-01 Chunghwa Picture Tubes Ltd Thin film transistor array, electrostatic discharge protective device thereof, and methods for fabricating the same
US7470942B2 (en) 2005-09-07 2008-12-30 Chunghwa Picture Tube., Ltd. Thin film transistor array and electrostatic discharge protective device thereof
KR100729046B1 (ko) * 2005-12-09 2007-06-14 삼성에스디아이 주식회사 유기 발광 표시장치의 정전기 방지 구조 및 그 제조 방법
TWI336006B (en) * 2006-08-16 2011-01-11 Au Optronics Corp Lcd sheet and the lcd panel thereof
JP2008176265A (ja) * 2007-01-16 2008-07-31 Samsung Sdi Co Ltd 有機電界発光表示装置
TWI350130B (en) * 2007-03-14 2011-10-01 Prime View Int Co Ltd Active matrix device or flat panel display with electrostatic protection
TWI400785B (zh) * 2007-07-12 2013-07-01 Chunghwa Picture Tubes Ltd 主動元件陣列基板
CN102289115B (zh) * 2010-06-21 2014-08-20 北京京东方光电科技有限公司 母板及tft阵列基板的制造方法
CN103021943B (zh) 2012-12-14 2015-07-15 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
KR200475020Y1 (ko) * 2014-06-05 2014-11-03 유준식 화재대피 비상문
CN104716146B (zh) * 2015-03-30 2018-06-15 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置
CN105489596B (zh) 2016-01-04 2019-05-21 京东方科技集团股份有限公司 一种阵列基板及制作方法
CN107505747A (zh) * 2017-07-25 2017-12-22 武汉华星光电技术有限公司 一种阵列基板、显示面板及基板的制备方法
CN109860279B (zh) * 2019-01-24 2022-03-18 南京京东方显示技术有限公司 一种薄膜晶体管及其修复方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599959A (ja) * 1982-07-07 1984-01-19 Seiko Epson Corp マトリツクスアレ−基板
JPS6188557A (ja) * 1984-10-05 1986-05-06 Nippon Soken Inc 薄膜トランジスタマトリツクスアレイ
JPH07112069B2 (ja) * 1985-09-18 1995-11-29 株式会社東芝 表示装置
FR2593629B1 (fr) * 1986-01-27 1988-03-18 Maurice Francois Ecran d'affichage a matrice active et a redondance lignes et colonnes
FR2593631B1 (fr) * 1986-01-27 1989-02-17 Maurice Francois Ecran d'affichage a matrice active a resistance de grille et procedes de fabrication de cet ecran
GB8621839D0 (en) * 1986-09-10 1986-10-15 British Aerospace Electrostatic discharge protection circuit
JPH0827597B2 (ja) * 1986-09-29 1996-03-21 株式会社東芝 アクテイブマトリクス型表示装置
JP2735178B2 (ja) * 1986-10-07 1998-04-02 日本電気株式会社 薄膜トランジスタ付液晶表示パネルの製造方法
US4803536A (en) * 1986-10-24 1989-02-07 Xerox Corporation Electrostatic discharge protection network for large area transducer arrays
JPS63180935A (ja) * 1987-01-23 1988-07-26 Hitachi Ltd 薄膜トランジスタ液晶表示装置
JPS63208023A (ja) * 1987-02-25 1988-08-29 Alps Electric Co Ltd 液晶表示素子の製造方法
JPS6432234A (en) * 1987-07-29 1989-02-02 Toshiba Corp Production of active matrix type liquid crystal display device
JPH02137366A (ja) * 1988-11-18 1990-05-25 Nec Corp ダイオード型アクティブマトリクス基板
US5194190A (en) * 1989-03-31 1993-03-16 General Electric Company Process for impregantion of glass fiber reinforcement with thermoplastic resins

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10228517B4 (de) * 2001-07-10 2007-07-19 Lg. Philips Lcd Co., Ltd. Schutzschaltung und -verfahren gegen elektrostatische Entladung in einem TFT-LCD

Also Published As

Publication number Publication date
JP2764139B2 (ja) 1998-06-11
EP0423824B1 (de) 1995-01-11
EP0423824A3 (en) 1991-10-16
DE69015961D1 (de) 1995-02-23
JPH03134628A (ja) 1991-06-07
KR910008462A (ko) 1991-05-31
EP0423824A2 (de) 1991-04-24
US5068748A (en) 1991-11-26

Similar Documents

Publication Publication Date Title
DE69015961D1 (de) Flüssigkristallanzeigeelement mit aktiver Matrix.
DE68920130D1 (de) Flüssigkristallanzeige mit aktiver Matrix.
DE68920620D1 (de) Flüssigkristall-Anzeigevorrichtung mit aktiver Matrix.
DE69108062T2 (de) Flüssigkristall-Anzeigevorrichtung mit aktiver Matrix.
DE68915413T2 (de) Anzeigevorrichtung mit aktiver Matrix.
DE69021513T2 (de) Anzeigevorrichtung mit aktiver Matrix.
DE68924247D1 (de) Anzeigevorrichtung mit aktiver Matrix.
DE3888465T2 (de) Flüssigkristallsubstrat mit aktiver Matrix.
DE69020288D1 (de) Flüssigkristallanzeigeelement.
DE69427109T2 (de) Flüssigkristallanzeigegerät mit aktiver Matrix
DE3788093T2 (de) Anzeigevorrichtungen mit aktiver Matrix.
DE68920935D1 (de) Flüssigkristall-Anzeigevorrichtung mit aktiver Matrix mit reduziertem Flimmern.
DE69109321D1 (de) Anzeigevorrichtung mit aktiver Matrix.
DE69112698T2 (de) Anzeigeeinrichtung von höher Qualität mit aktiver Matrix.
DE69016349T2 (de) Flüssigkristallanzeige.
DE69015214D1 (de) Anzeigevorrichtungen mit aktiver Matrix-Adressierung.
DE59007436D1 (de) Matrix-Flüssigkristallanzeige.
DE68915257D1 (de) Flüssigkristallanzeige.
DE69204961D1 (de) Flüssigkristall-Anzeigetafel mit aktiver Matrix.
DE69015039D1 (de) Flüssigkristallanzeige.
DE68917651T2 (de) Aktiv-Matrix-Anzeigevorrichtung.
DE69111968D1 (de) Anzeigeeinrichtung mit aktiver Matrix.
DE68909646T2 (de) Matrix-Anzeigevorrichtungen.
DE69218849T2 (de) Flüssigkristallanzeigegerät mit aktiver Matrix
DE69013610T2 (de) Aktives Matrixanzeigegerät.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HOSIDEN AND PHILIPS DISPLAY CORP., KOBE, HYOGO, JP

8339 Ceased/non-payment of the annual fee