DE68915413T2 - Anzeigevorrichtung mit aktiver Matrix. - Google Patents

Anzeigevorrichtung mit aktiver Matrix.

Info

Publication number
DE68915413T2
DE68915413T2 DE68915413T DE68915413T DE68915413T2 DE 68915413 T2 DE68915413 T2 DE 68915413T2 DE 68915413 T DE68915413 T DE 68915413T DE 68915413 T DE68915413 T DE 68915413T DE 68915413 T2 DE68915413 T2 DE 68915413T2
Authority
DE
Germany
Prior art keywords
display device
active matrix
matrix display
active
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68915413T
Other languages
English (en)
Other versions
DE68915413D1 (de
Inventor
Yojiro Matsueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE68915413D1 publication Critical patent/DE68915413D1/de
Publication of DE68915413T2 publication Critical patent/DE68915413T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136268—Switch defects
DE68915413T 1988-12-20 1989-12-11 Anzeigevorrichtung mit aktiver Matrix. Expired - Lifetime DE68915413T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63321361A JPH02165125A (ja) 1988-12-20 1988-12-20 表示装置

Publications (2)

Publication Number Publication Date
DE68915413D1 DE68915413D1 (de) 1994-06-23
DE68915413T2 true DE68915413T2 (de) 1994-11-17

Family

ID=18131714

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68915413T Expired - Lifetime DE68915413T2 (de) 1988-12-20 1989-12-11 Anzeigevorrichtung mit aktiver Matrix.

Country Status (4)

Country Link
US (1) US5173792A (de)
EP (1) EP0375233B1 (de)
JP (1) JPH02165125A (de)
DE (1) DE68915413T2 (de)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0438138B1 (de) * 1990-01-17 1995-03-15 Kabushiki Kaisha Toshiba Flüssigkristall-Anzeigevorrichtung mit aktiver Matrix
JPH06100757B2 (ja) * 1990-07-09 1994-12-12 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 液晶表示装置
JP2711015B2 (ja) * 1990-07-25 1998-02-10 三菱電機株式会社 マトリクス形表示装置
JP2650780B2 (ja) * 1990-11-30 1997-09-03 シャープ株式会社 アクティブマトリクス基板
US5287206A (en) * 1990-11-30 1994-02-15 Sharp Kabushiki Kaisha Active matrix display device
JP2999271B2 (ja) * 1990-12-10 2000-01-17 株式会社半導体エネルギー研究所 表示装置
US6713783B1 (en) * 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
JPH07119919B2 (ja) * 1991-05-15 1995-12-20 インターナショナル・ビジネス・マシーンズ・コーポレイション 液晶表示装置
US5414278A (en) * 1991-07-04 1995-05-09 Mitsushibi Denki Kabushiki Kaisha Active matrix liquid crystal display device
JPH05119344A (ja) * 1991-10-25 1993-05-18 Nec Corp 液晶表示デバイス
GB9219836D0 (en) * 1992-09-18 1992-10-28 Philips Electronics Uk Ltd Electronic drive circuits for active matrix devices,and a method of self-tasting and programming such circuits
KR100268007B1 (ko) * 1992-12-22 2000-10-16 구본준 액정표시소자 제조방법
US5555001A (en) * 1994-03-08 1996-09-10 Prime View Hk Limited Redundant scheme for LCD display with integrated data driving circuit
JP3402400B2 (ja) 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
US6747627B1 (en) 1994-04-22 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device
US5650636A (en) 1994-06-02 1997-07-22 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
JP3897826B2 (ja) * 1994-08-19 2007-03-28 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
US5956008A (en) * 1994-09-06 1999-09-21 Semiconductor Energy Laboratory Co., Driver circuit for active matrix display and method of operating same
US5929464A (en) * 1995-01-20 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-optical device
JP3256110B2 (ja) * 1995-09-28 2002-02-12 シャープ株式会社 液晶表示装置
JP3418653B2 (ja) 1995-09-28 2003-06-23 シャープ株式会社 アクティブマトリクス型液晶表示装置
JP4059292B2 (ja) * 1996-09-26 2008-03-12 セイコーエプソン株式会社 表示装置
GB9705417D0 (en) * 1997-03-15 1997-04-30 Sharp Kk Fault tolerant circuit arrangements
KR100430773B1 (ko) * 1998-07-14 2004-05-10 가부시끼가이샤 도시바 액티브 매트릭스형 액정표시장치
US6512504B1 (en) * 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
JP4755748B2 (ja) * 1999-09-24 2011-08-24 東芝モバイルディスプレイ株式会社 平面表示装置
TWI301915B (de) 2000-03-17 2008-10-11 Seiko Epson Corp
JP3645184B2 (ja) * 2000-05-31 2005-05-11 シャープ株式会社 液晶表示装置及びその欠陥修正方法
JP4925528B2 (ja) * 2000-09-29 2012-04-25 三洋電機株式会社 表示装置
JP4632522B2 (ja) * 2000-11-30 2011-02-16 Ｎｅｃ液晶テクノロジー株式会社 反射型液晶表示装置の製造方法
TW466673B (en) * 2000-12-11 2001-12-01 Unipac Optoelectronics Corp Cst on common structure
JP3520417B2 (ja) 2000-12-14 2004-04-19 セイコーエプソン株式会社 電気光学パネルおよび電子機器
US7280090B2 (en) 2000-12-22 2007-10-09 Electronics For Imaging, Inc. Methods and apparatus for repairing inoperative pixels in a display
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KR100469342B1 (ko) * 2001-07-11 2005-02-02 엘지.필립스 엘시디 주식회사 액정표시소자
US7112517B2 (en) 2001-09-10 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Laser treatment device, laser treatment method, and semiconductor device fabrication method
JP2003091245A (ja) * 2001-09-18 2003-03-28 Semiconductor Energy Lab Co Ltd 表示装置
US6862052B2 (en) * 2001-12-14 2005-03-01 Samsung Electronics Co., Ltd. Liquid crystal display, thin film transistor array panel for liquid crystal display and manufacturing method thereof
US20040108504A1 (en) * 2002-11-20 2004-06-10 Charles Forbes Active matrix thin film transistor array backplane
TWI224234B (en) * 2003-08-12 2004-11-21 Quanta Display Inc Pixel structure and fabricating method thereof
KR20050041010A (ko) * 2003-10-29 2005-05-04 삼성전자주식회사 박막 다이오드 표시판 및 그 제조 방법
TWI277935B (en) * 2004-01-06 2007-04-01 Hannstar Display Corp Pixel structure and exposure method thereof
JP4088619B2 (ja) * 2004-01-28 2008-05-21 シャープ株式会社 アクティブマトリクス基板及び表示装置
JP4627081B2 (ja) * 2004-01-28 2011-02-09 シャープ株式会社 アクティブマトリクス基板及び表示装置
JP2005252228A (ja) * 2004-02-05 2005-09-15 Sharp Corp 表示装置及びその製造方法
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US20050275352A1 (en) * 2004-06-14 2005-12-15 Au Optronics Corporation. Redundant storage capacitor and method for repairing OLED pixels and driving circuits
JP4829534B2 (ja) * 2005-05-31 2011-12-07 シャープ株式会社 薄膜トランジスタマトリクス基板及びその欠陥修復方法
JP4405557B2 (ja) * 2005-09-22 2010-01-27 シャープ株式会社 アクティブマトリクス基板、表示装置、テレビジョン装置、アクティブマトリクス基板の製造方法、及び表示装置の製造方法
US8947297B2 (en) * 2006-01-30 2015-02-03 The Invention Science Fund I, Llc Positional display elements
KR101232157B1 (ko) * 2006-06-09 2013-02-12 엘지디스플레이 주식회사 Ｌｃｄ 검사 장비
JP5004908B2 (ja) * 2008-09-05 2012-08-22 パナソニック液晶ディスプレイ株式会社 液晶表示装置
RU2468403C1 (ru) 2008-11-05 2012-11-27 Шарп Кабусики Кайся Подложка с активной матрицей, способ изготовления подложки с активной матрицей, жидкокристаллическая панель, способ изготовления жидкокристаллической панели, жидкокристаллический дисплей, блок жидкокристаллического дисплея и телевизионный приемник
RU2478224C2 (ru) * 2008-12-10 2013-03-27 Шарп Кабушики Каиша Подложка активной матрицы, способ изготовления подложки активной матрицы, жидкокристаллическая панель, способ изготовления жидкокристаллической панели, жидкокристаллическое дисплейное устройство, жидкокристаллический дисплей и телевизионный приемник
EP2256544A1 (de) * 2009-05-27 2010-12-01 Polymer Vision Limited Verfahren zur Herstellung einer Anzeigetafel und Anzeigetafel mit reparierfähigen Elementen
TWI409894B (zh) * 2010-07-09 2013-09-21 Chunghwa Picture Tubes Ltd 薄膜電晶體之對位檢測方法
CN103018987B (zh) * 2012-12-06 2015-05-13 京东方科技集团股份有限公司 阵列基板及显示装置
KR20140120167A (ko) * 2013-04-02 2014-10-13 삼성디스플레이 주식회사 수리된 화소를 갖는 유기전계발광 표시장치 및 그의 화소 수리방법
WO2014208013A1 (ja) * 2013-06-27 2014-12-31 凸版印刷株式会社 薄膜トランジスタアレイ、その製造方法、画像表示装置及び表示方法
JP6451054B2 (ja) * 2014-01-23 2019-01-16 凸版印刷株式会社 薄膜トランジスタアレイ、その製造方法及び画像表示装置
KR102296945B1 (ko) * 2014-07-04 2021-09-01 엘지디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
CN109270756B (zh) * 2018-09-30 2020-12-25 惠科股份有限公司 一种显示面板和显示装置
JP7193404B2 (ja) * 2019-03-29 2022-12-20 株式会社ジャパンディスプレイ 表示装置

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Also Published As

Publication number Publication date
EP0375233A3 (de) 1991-01-16
US5173792A (en) 1992-12-22
EP0375233A2 (de) 1990-06-27
JPH02165125A (ja) 1990-06-26
EP0375233B1 (de) 1994-05-18
DE68915413D1 (de) 1994-06-23

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