CN109860279B - 一种薄膜晶体管及其修复方法 - Google Patents
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JP2764139B2 (ja) * | 1989-10-20 | 1998-06-11 | ホシデン・フィリップス・ディスプレイ株式会社 | アクティブマトリックス液晶表示素子 |
US6580132B1 (en) * | 2002-04-10 | 2003-06-17 | International Business Machines Corporation | Damascene double-gate FET |
US7968884B2 (en) * | 2006-12-05 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR102061643B1 (ko) * | 2013-04-29 | 2020-01-02 | 엘지디스플레이 주식회사 | 액정표시장치 |
CN104218095B (zh) * | 2014-09-01 | 2016-05-25 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板和显示装置 |
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Effective date of registration: 20200827 Address after: No.7 Tianyou Road, Qixia District, Nanjing City, Jiangsu Province Applicant after: NANJING CEC PANDA FPD TECHNOLOGY Co.,Ltd. Address before: Nanjing Crystal Valley Road in Qixia District of Nanjing City Tianyou 210033 Jiangsu province No. 7 Applicant before: NANJING CEC PANDA FPD TECHNOLOGY Co.,Ltd. Applicant before: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Applicant before: Nanjing East China Electronic Information Technology Co.,Ltd. |
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Address after: No.7 Tianyou Road, Qixia District, Nanjing City, Jiangsu Province Applicant after: Nanjing BOE Display Technology Co.,Ltd. Address before: No.7 Tianyou Road, Qixia District, Nanjing City, Jiangsu Province Applicant before: NANJING CEC PANDA FPD TECHNOLOGY Co.,Ltd. |
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