DE60238615D1 - Metallurgisches silizium hoher reinheit und verfahren zu seiner herstellung - Google Patents

Metallurgisches silizium hoher reinheit und verfahren zu seiner herstellung

Info

Publication number
DE60238615D1
DE60238615D1 DE60238615T DE60238615T DE60238615D1 DE 60238615 D1 DE60238615 D1 DE 60238615D1 DE 60238615 T DE60238615 T DE 60238615T DE 60238615 T DE60238615 T DE 60238615T DE 60238615 D1 DE60238615 D1 DE 60238615D1
Authority
DE
Germany
Prior art keywords
refining
production
high purity
silicon
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60238615T
Other languages
English (en)
Inventor
Gerard Baluais
Yves Caratini
Yves Delannoy
Christian Trassy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Ferroglobe France SAS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Ferropem SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Ferropem SAS filed Critical Centre National de la Recherche Scientifique CNRS
Application granted granted Critical
Publication of DE60238615D1 publication Critical patent/DE60238615D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Treatment Of Steel In Its Molten State (AREA)
DE60238615T 2001-07-23 2002-07-22 Metallurgisches silizium hoher reinheit und verfahren zu seiner herstellung Expired - Lifetime DE60238615D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0109788A FR2827592B1 (fr) 2001-07-23 2001-07-23 Silicium metallurgique de haute purete et procede d'elaboration
PCT/FR2002/002602 WO2003014019A1 (fr) 2001-07-23 2002-07-22 Silicium metallurgique de haute purete et procede d'elaboration

Publications (1)

Publication Number Publication Date
DE60238615D1 true DE60238615D1 (de) 2011-01-27

Family

ID=8865792

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60224394T Expired - Lifetime DE60224394T2 (de) 2001-07-23 2002-07-22 Metallurgisches silizium mittlererer reinheit und verfahren zu seiner herstellung
DE60238615T Expired - Lifetime DE60238615D1 (de) 2001-07-23 2002-07-22 Metallurgisches silizium hoher reinheit und verfahren zu seiner herstellung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE60224394T Expired - Lifetime DE60224394T2 (de) 2001-07-23 2002-07-22 Metallurgisches silizium mittlererer reinheit und verfahren zu seiner herstellung

Country Status (12)

Country Link
US (2) US7858063B2 (de)
EP (2) EP1409406B1 (de)
JP (2) JP4523274B2 (de)
CN (2) CN1295147C (de)
AT (2) ATE382581T1 (de)
BR (2) BR0211193B1 (de)
DE (2) DE60224394T2 (de)
ES (2) ES2357501T3 (de)
FR (1) FR2827592B1 (de)
NO (2) NO335984B1 (de)
WO (2) WO2003010090A1 (de)
ZA (2) ZA200400276B (de)

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CN101426722B (zh) * 2006-03-15 2013-06-05 反应科学公司 制造用于太阳能电池及其它应用的硅的方法
CN103030148B (zh) * 2006-04-04 2015-02-25 太阳能原材料公司 纯化硅的方法
US7682585B2 (en) * 2006-04-25 2010-03-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Silicon refining process
DE102006034061A1 (de) * 2006-07-20 2008-01-24 REV Renewable Energy Ventures, Inc., Aloha Polysilanverarbeitung und Verwendung
KR101074304B1 (ko) * 2006-08-31 2011-10-17 미쓰비시마테리알덴시카세이가부시키가이샤 금속 실리콘과 그 제조 방법
GEP20115178B (en) * 2006-09-14 2011-03-10 Silicium Becancour Inc Process and apparatus for purifying low-grade silicon material
AU2007298104A1 (en) * 2006-09-29 2008-03-27 Shin-Etsu Chemical Co., Ltd. Method for purification of silicon, silicon, and solar cell
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US20080314445A1 (en) * 2007-06-25 2008-12-25 General Electric Company Method for the preparation of high purity silicon
US20080314446A1 (en) * 2007-06-25 2008-12-25 General Electric Company Processes for the preparation of solar-grade silicon and photovoltaic cells
WO2009001547A1 (ja) * 2007-06-26 2008-12-31 Panasonic Corporation 金属シリコンの精製方法とシリコン塊の製造方法
US8047288B2 (en) 2007-07-18 2011-11-01 Oxane Materials, Inc. Proppants with carbide and/or nitride phases
AU2008299523A1 (en) * 2007-09-13 2009-03-19 Silicium Becancour Inc. Process for the production of medium and high purity silicon from metallurgical grade silicon
WO2009043167A1 (en) 2007-10-03 2009-04-09 6N Silicon Inc. Method for processing silicon powder to obtain silicon crystals
CN101131371B (zh) * 2007-10-08 2010-06-02 苏州阿特斯阳光电力科技有限公司 一种精炼冶金硅的杂质含量检测分析方法
US20090208770A1 (en) * 2008-02-14 2009-08-20 Ralf Jonczyk Semiconductor sheets and methods for fabricating the same
FR2928641B1 (fr) * 2008-03-14 2010-03-26 Centre Nat Rech Scient Procede de purification de silicium pour applications photovoltaiques
US20090280336A1 (en) * 2008-05-08 2009-11-12 Ralf Jonczyk Semiconductor sheets and methods of fabricating the same
ITMI20081085A1 (it) * 2008-06-16 2009-12-17 N E D Silicon S P A Metodo per la preparazione di silicio di grado metallurgico di elevata purezza.
US8404016B2 (en) * 2008-08-01 2013-03-26 Ulvac, Inc. Method for refining metal
US8409319B2 (en) * 2008-08-12 2013-04-02 Ulvac, Inc. Silicon purification method
CN102498062A (zh) * 2009-04-29 2012-06-13 卡利太阳能有限公司 升级冶金级硅材料提纯的过程控制
US8562932B2 (en) 2009-08-21 2013-10-22 Silicor Materials Inc. Method of purifying silicon utilizing cascading process
DE102009056731A1 (de) 2009-12-04 2011-06-09 Rev Renewable Energy Ventures, Inc. Halogenierte Polysilane und Polygermane
CN101974780A (zh) * 2010-07-28 2011-02-16 常州天合光能有限公司 多晶铸锭晶体生长工艺
JP2012036043A (ja) * 2010-08-09 2012-02-23 Sumco Corp シリコンインゴットの製造装置および製造方法
CN102259859B (zh) * 2011-06-01 2012-12-12 宁夏银星多晶硅有限责任公司 一种低硼低磷冶金硅的生产工艺
ITRM20110426A1 (it) * 2011-08-08 2013-02-09 N E D Silicon S P A Metodo perfezionato per la preparazione di silicio di grado metallurgico ad alta purezza, in particolare per uso nel campo fotovoltaico.
TWI627131B (zh) * 2012-02-01 2018-06-21 美商希利柯爾材料股份有限公司 矽純化之模具及方法
KR101372524B1 (ko) 2012-02-21 2014-03-20 (주)리뉴에너지 일체식 아크 환원 및 슬래그 정련 장치
CN102627394B (zh) * 2012-04-02 2014-03-05 锦州新世纪多晶硅材料有限公司 一种采用冶金法降低金属硅中硼杂质含量的方法
JP5833256B2 (ja) * 2012-12-10 2015-12-16 昭和電工株式会社 ケイ素含有アルミニウム合金鋳塊の製造方法
CA2994466A1 (en) * 2015-08-07 2017-02-16 Pyrogenesis Canada Inc. Silica to high purity silicon production process
CN115465865B (zh) * 2022-08-11 2023-08-04 商南中剑实业有限责任公司 一种同步去除工业硅中硼杂质和磷杂质的装置及其方法

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JPS5913444B2 (ja) * 1977-11-21 1984-03-29 ユニオン・カ−バイド・コ−ポレ−シヨン 精製された金属シリコン製造方法
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JP3205352B2 (ja) * 1990-05-30 2001-09-04 川崎製鉄株式会社 シリコン精製方法及び装置
JP3000109B2 (ja) * 1990-09-20 2000-01-17 株式会社住友シチックス尼崎 高純度シリコン鋳塊の製造方法
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FR2746785B1 (fr) * 1996-04-02 1998-05-22 Pechiney Electrometallurgie Silicium metallurgique a structure controlee destine a la synthese des halogenosilanes
CA2232777C (en) * 1997-03-24 2001-05-15 Hiroyuki Baba Method for producing silicon for use in solar cells
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Also Published As

Publication number Publication date
BR0211193A (pt) 2004-08-10
JP4523274B2 (ja) 2010-08-11
EP1409405B1 (de) 2010-12-15
JP4410847B2 (ja) 2010-02-03
ATE382581T1 (de) 2008-01-15
CN1295147C (zh) 2007-01-17
CN1543435A (zh) 2004-11-03
CN1295146C (zh) 2007-01-17
JP2004535354A (ja) 2004-11-25
ES2298390T3 (es) 2008-05-16
ZA200400276B (en) 2005-03-30
WO2003014019A1 (fr) 2003-02-20
FR2827592A1 (fr) 2003-01-24
NO20040284L (no) 2004-03-23
NO335984B1 (no) 2015-04-13
EP1409405A1 (de) 2004-04-21
FR2827592B1 (fr) 2003-08-22
CN1543436A (zh) 2004-11-03
EP1409406B1 (de) 2008-01-02
US7404941B2 (en) 2008-07-29
NO20040285L (no) 2004-03-23
DE60224394D1 (de) 2008-02-14
US20050074388A1 (en) 2005-04-07
US20050053539A1 (en) 2005-03-10
DE60224394T2 (de) 2008-12-18
BR0211195B1 (pt) 2010-08-10
BR0211193B1 (pt) 2011-02-08
EP1409406A1 (de) 2004-04-21
WO2003010090A1 (fr) 2003-02-06
ATE491668T1 (de) 2011-01-15
NO335985B1 (no) 2015-04-13
JP2004537491A (ja) 2004-12-16
ZA200400346B (en) 2005-03-30
US7858063B2 (en) 2010-12-28
BR0211195A (pt) 2004-08-10
ES2357501T3 (es) 2011-04-27

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