JP4410847B2 - 中純度金属シリコンとその製錬法 - Google Patents
中純度金属シリコンとその製錬法 Download PDFInfo
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- JP4410847B2 JP4410847B2 JP2003515451A JP2003515451A JP4410847B2 JP 4410847 B2 JP4410847 B2 JP 4410847B2 JP 2003515451 A JP2003515451 A JP 2003515451A JP 2003515451 A JP2003515451 A JP 2003515451A JP 4410847 B2 JP4410847 B2 JP 4410847B2
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- 239000010703 silicon Substances 0.000 title claims abstract description 80
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims description 30
- 238000003723 Smelting Methods 0.000 title claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 79
- 238000007670 refining Methods 0.000 claims abstract description 17
- 238000007711 solidification Methods 0.000 claims abstract description 14
- 230000008023 solidification Effects 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 11
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000460 chlorine Substances 0.000 claims abstract description 5
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 5
- 230000007935 neutral effect Effects 0.000 claims abstract description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 29
- 229910052796 boron Inorganic materials 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 21
- 239000003638 chemical reducing agent Substances 0.000 claims description 17
- 238000000926 separation method Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 239000007787 solid Substances 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 230000009467 reduction Effects 0.000 claims description 9
- 230000006698 induction Effects 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052742 iron Inorganic materials 0.000 abstract description 7
- 238000002844 melting Methods 0.000 abstract description 2
- 238000004320 controlled atmosphere Methods 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 22
- 229910052698 phosphorus Inorganic materials 0.000 description 22
- 239000011574 phosphorus Substances 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 16
- 239000012535 impurity Substances 0.000 description 13
- 239000011575 calcium Substances 0.000 description 9
- 229910052791 calcium Inorganic materials 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 7
- 238000005266 casting Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000003610 charcoal Substances 0.000 description 4
- 239000003245 coal Substances 0.000 description 4
- 239000000571 coke Substances 0.000 description 4
- 239000002006 petroleum coke Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000006253 pitch coke Substances 0.000 description 3
- 239000000779 smoke Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002893 slag Substances 0.000 description 2
- 238000004438 BET method Methods 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 241001062472 Stokellia anisodon Species 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004939 coking Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
鉄<0.30%、カルシウム<0.10%、アルミニウム<0.30%、ホウ素:20ppmから50ppm、リン:20ppmから100ppm。
・サブマージアーク電気炉でのシリカの炭素熱還元によって、ホウ素含有率が低いシリコンを製錬すること、
・酸素又は塩素で液体シリコンを精錬すること、
・中性ガスを注入して、10Paから100Paの減圧下で、精錬されたシリコンを処理すること、
・分離凝固
・不純物合計が100ppmと400ppmの間に、好適には100ppmと300ppmの間に含まれ、そのうち、金属元素含有率は30ppmと300ppmの間に、好適には30ppmと200ppmの間に含まれる、
・ホウ素含有率が1ppmから10ppm、好適には1ppmから3ppm含まれる、
・リン含有率とホウ素含有率との間の比が0.5と1.5の間に含まれる。
・木炭については:約125m2/g
・既知の反応性が最も高いコークスについては:80m2/gから140m2/g
・コークス化可能な石炭については:約80m2/g
・高炉コークスについては:40m2/gから50m2/g
・コークス化不能な石炭については:20m2/gから40m2/g
・石油コークスについては:15m2/gから25m2/g
・ピッチコークスについては:1m2/gから4m2/g
Fe<0.30%、Ca:0.5%から1%、Al:0.3%から0.5%、ホウ素:1ppmから10ppm、リン:10ppmから25ppm
Fe<0.3%、Ca<0.1%、Al<0.3%、ホウ素:1ppmから10ppm、リン:10ppmから25ppm
ホウ素:1ppmから10ppm;リン/ホウ素は0.5と1.5の間;
不純物合計:100ppmから400ppm、
金属不純物合計:30ppmから300ppm、鉄:10ppmから200ppm、
炭素:20ppmから50ppm;酸素:50ppmから100ppm;
カルシウム:5ppmから30ppm;アルミニウム:5ppmから30ppm;チタン:2ppmから20ppm。
ホウ素:1ppmから10ppm;リン/ホウ素は0.5と1.5の間;
不純物合計:100ppmから300ppm、
金属不純物合計:30ppmから200ppm、鉄:10ppmから40ppm、
炭素:10ppmから30ppm;酸素:20ppmから50ppm;
カルシウム:5ppmから20ppm;アルミニウム:5ppmから20ppm;チタン:2ppmから10ppm。
・ホウ素含有率が3ppmであった石英1ロット、
・ホウ素含有率が検出可能最小値(0.5ppm)未満であった、直径が6mmから12mmで比表面積が27m2/gの石油コークス。
エネルギー:29300kWh/t、これは熱効率が80%の場合、16470kWh/tになるものである。
シリカの消費:3680kg/t。
炉の粗い生産でのシリコン分析:
ホウ素:5ppm、リン:18ppm。
Fe<0.24% Ca<0.09% Al<0.12% Ni:38ppm
金属不純物合計<0.50%
ホウ素:5ppm
リン:18ppm
鉄=300ppm;カルシウム:25ppm;アルミニウム:12ppm;チタン:6ppm;ホウ素5ppm;リン:7ppm;炭素:100ppm;酸素:800ppm。
鉄=35ppm;カルシウム:17ppm;アルミニウム:14ppm;チタン:4ppm;ホウ素5ppm;リン:7ppm;炭素:25ppm;酸素:100ppm。
Claims (8)
- 光起電力又はエレクトロニクスの品位のシリコン製造において原料として用いられるための中純度シリコンを製錬する方法であって、
P e を、電力とし、D o を、電極の直径として、
・ホウ素含有率が2ppm未満で、加重平均比表面積Sが20m2/gと40m2/gの間に含まれる還元剤を用いて、比(Pe/Do 3)/3で表すと2MW/m3と3MW/m3の間に含まれる使用出力密度で、ホウ素含有率が低い液体シリコンを、サブマージアーク電気炉での炭素熱還元によって製錬すること、
・酸素又は塩素で液体シリコンを精錬すること、
・中性ガスを注入して、10Paから100Paの間の減圧下で、液体シリコンを処理すること、
・分離凝固することを含む方法。 - 分離凝固に続いて、得られた固体分画の再溶融と第二の分離凝固が行われることを特徴とする、請求項1に記載の方法。
- 最初の分離凝固が、2×10-5m/s未満の凝固先頭の前進速度で実施されることを特徴とする、請求項2に記載の方法。
- 第二の分離凝固が、10-5m/s未満の凝固先頭の前進速度で実施されることを特徴とする、請求項2又は請求項3に記載の方法。
- 第二の分離凝固先頭の前進速度が5×10-6m/s未満であることを特徴とする、請求項4に記載の方法。
- 分離凝固作業が反射炉内で行われることを特徴とする、請求項1から請求項5のいずれか一つに記載の方法。
- 再溶融が誘導加熱炉内で実施されることを特徴とする、請求項2から請求項6のいずれか一つに記載の方法。
- シリコンの再溶融のために使用される電気炉のるつぼが、シリカ製、炭素製又は炭化ケイ素製であることを特徴とする、請求項6又は請求項7に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0109788A FR2827592B1 (fr) | 2001-07-23 | 2001-07-23 | Silicium metallurgique de haute purete et procede d'elaboration |
PCT/FR2002/002603 WO2003010090A1 (fr) | 2001-07-23 | 2002-07-22 | Silicium metallurgique de moyenne purete et procede d'elaboration |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004535354A JP2004535354A (ja) | 2004-11-25 |
JP4410847B2 true JP4410847B2 (ja) | 2010-02-03 |
Family
ID=8865792
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003518979A Expired - Fee Related JP4523274B2 (ja) | 2001-07-23 | 2002-07-22 | 高純度金属シリコンとその製錬法 |
JP2003515451A Expired - Fee Related JP4410847B2 (ja) | 2001-07-23 | 2002-07-22 | 中純度金属シリコンとその製錬法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003518979A Expired - Fee Related JP4523274B2 (ja) | 2001-07-23 | 2002-07-22 | 高純度金属シリコンとその製錬法 |
Country Status (12)
Country | Link |
---|---|
US (2) | US7404941B2 (ja) |
EP (2) | EP1409406B1 (ja) |
JP (2) | JP4523274B2 (ja) |
CN (2) | CN1295147C (ja) |
AT (2) | ATE491668T1 (ja) |
BR (2) | BR0211193B1 (ja) |
DE (2) | DE60224394T2 (ja) |
ES (2) | ES2357501T3 (ja) |
FR (1) | FR2827592B1 (ja) |
NO (2) | NO335985B1 (ja) |
WO (2) | WO2003010090A1 (ja) |
ZA (2) | ZA200400276B (ja) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NO333319B1 (no) * | 2003-12-29 | 2013-05-06 | Elkem As | Silisiummateriale for fremstilling av solceller |
FR2869028B1 (fr) * | 2004-04-20 | 2006-07-07 | Efd Induction Sa Sa | Procede et installation de fabrication de blocs d'un materiau semiconducteur |
JP4749730B2 (ja) * | 2005-02-09 | 2011-08-17 | 新日鉄マテリアルズ株式会社 | Siの精錬方法 |
EP2001797A4 (en) * | 2006-03-15 | 2015-05-27 | Reaction Science Inc | SILICON MANUFACTURING METHOD FOR SOLAR CELLS AND OTHER APPLICATIONS |
RU2445258C2 (ru) * | 2006-04-04 | 2012-03-20 | Калисолар Канада Инк. | Способ очистки кремния |
US7682585B2 (en) * | 2006-04-25 | 2010-03-23 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Silicon refining process |
DE102006034061A1 (de) * | 2006-07-20 | 2008-01-24 | REV Renewable Energy Ventures, Inc., Aloha | Polysilanverarbeitung und Verwendung |
WO2008026728A1 (fr) * | 2006-08-31 | 2008-03-06 | Mitsubishi Materials Corporation | Silicium métallique et son procédé de fabrication |
KR20090053807A (ko) * | 2006-09-14 | 2009-05-27 | 실리슘 비캔커 인코포레이티드 | 저급 실리콘 재료를 정제하는 방법 및 그 장치 |
JP5210167B2 (ja) * | 2006-09-29 | 2013-06-12 | 信越化学工業株式会社 | 珪素の精製方法 |
FR2908125B1 (fr) | 2006-11-02 | 2009-11-20 | Commissariat Energie Atomique | Procede de purification de silicium metallurgique par solidification dirigee |
CN100460320C (zh) * | 2007-03-08 | 2009-02-11 | 陈应天 | 使用自旋仰角跟踪的太阳炉对材料进行真空提纯的方法 |
US20100178195A1 (en) * | 2007-06-08 | 2010-07-15 | Motoyuki Yamada | Method of solidifying metallic silicon |
US20080314445A1 (en) * | 2007-06-25 | 2008-12-25 | General Electric Company | Method for the preparation of high purity silicon |
US20080314446A1 (en) * | 2007-06-25 | 2008-12-25 | General Electric Company | Processes for the preparation of solar-grade silicon and photovoltaic cells |
JP4265697B2 (ja) * | 2007-06-26 | 2009-05-20 | パナソニック株式会社 | 金属シリコンの精製方法とシリコン塊の製造方法 |
WO2009012455A1 (en) | 2007-07-18 | 2009-01-22 | Oxane Materials, Inc. | Proppants with carbide and/or nitride phases |
EP2212249B1 (en) * | 2007-09-13 | 2015-01-14 | Silicio Ferrosolar, S.L.U. | Process for the production of medium and high purity silicon from metallurgical grade silicon |
JP5400782B2 (ja) | 2007-10-03 | 2014-01-29 | シリコア マテリアルズ インコーポレイテッド | シリコン結晶を得るためのシリコン粉末の処理方法 |
CN101131371B (zh) * | 2007-10-08 | 2010-06-02 | 苏州阿特斯阳光电力科技有限公司 | 一种精炼冶金硅的杂质含量检测分析方法 |
US20090208770A1 (en) * | 2008-02-14 | 2009-08-20 | Ralf Jonczyk | Semiconductor sheets and methods for fabricating the same |
FR2928641B1 (fr) * | 2008-03-14 | 2010-03-26 | Centre Nat Rech Scient | Procede de purification de silicium pour applications photovoltaiques |
US20090280336A1 (en) * | 2008-05-08 | 2009-11-12 | Ralf Jonczyk | Semiconductor sheets and methods of fabricating the same |
ITMI20081085A1 (it) * | 2008-06-16 | 2009-12-17 | N E D Silicon S P A | Metodo per la preparazione di silicio di grado metallurgico di elevata purezza. |
KR101275218B1 (ko) * | 2008-08-01 | 2013-06-17 | 가부시키가이샤 아루박 | 금속의 정제 방법 |
JP5315345B2 (ja) * | 2008-08-12 | 2013-10-16 | 株式会社アルバック | シリコンの精製方法 |
JP5511945B2 (ja) * | 2009-04-29 | 2014-06-04 | シリコー マテリアルズ インコーポレイテッド | Umg−si材料精製のためのプロセス管理 |
US8562932B2 (en) | 2009-08-21 | 2013-10-22 | Silicor Materials Inc. | Method of purifying silicon utilizing cascading process |
DE102009056731A1 (de) | 2009-12-04 | 2011-06-09 | Rev Renewable Energy Ventures, Inc. | Halogenierte Polysilane und Polygermane |
CN101974780A (zh) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | 多晶铸锭晶体生长工艺 |
JP2012036043A (ja) * | 2010-08-09 | 2012-02-23 | Sumco Corp | シリコンインゴットの製造装置および製造方法 |
CN102259859B (zh) * | 2011-06-01 | 2012-12-12 | 宁夏银星多晶硅有限责任公司 | 一种低硼低磷冶金硅的生产工艺 |
ITRM20110426A1 (it) * | 2011-08-08 | 2013-02-09 | N E D Silicon S P A | Metodo perfezionato per la preparazione di silicio di grado metallurgico ad alta purezza, in particolare per uso nel campo fotovoltaico. |
TWI627131B (zh) * | 2012-02-01 | 2018-06-21 | 美商希利柯爾材料股份有限公司 | 矽純化之模具及方法 |
KR101372524B1 (ko) | 2012-02-21 | 2014-03-20 | (주)리뉴에너지 | 일체식 아크 환원 및 슬래그 정련 장치 |
CN102627394B (zh) * | 2012-04-02 | 2014-03-05 | 锦州新世纪多晶硅材料有限公司 | 一种采用冶金法降低金属硅中硼杂质含量的方法 |
US20150299826A1 (en) * | 2012-12-10 | 2015-10-22 | Showa Denko K.K. | Method of producing silicon-containing aluminum alloy ingot |
WO2017024378A1 (en) * | 2015-08-07 | 2017-02-16 | Pyrogenesis Canada Inc. | Silica to high purity silicon production process |
US20220212937A1 (en) * | 2019-04-30 | 2022-07-07 | Wacker Chemie Ag | Method for refining crude silicon melts using a particulate mediator |
CN115465865B (zh) * | 2022-08-11 | 2023-08-04 | 商南中剑实业有限责任公司 | 一种同步去除工业硅中硼杂质和磷杂质的装置及其方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
LU60094A1 (ja) * | 1969-12-24 | 1971-08-17 | ||
US4298423A (en) * | 1976-12-16 | 1981-11-03 | Semix Incorporated | Method of purifying silicon |
US4193975A (en) * | 1977-11-21 | 1980-03-18 | Union Carbide Corporation | Process for the production of improved refined metallurgical silicon |
JPS5913444B2 (ja) * | 1977-11-21 | 1984-03-29 | ユニオン・カ−バイド・コ−ポレ−シヨン | 精製された金属シリコン製造方法 |
CA1147698A (en) * | 1980-10-15 | 1983-06-07 | Maher I. Boulos | Purification of metallurgical grade silicon |
DE3215981A1 (de) * | 1982-04-29 | 1983-11-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen hochreiner ausgangsmaterialien fuer die fertigung von silizium fuer solarzellen nach dem carbothermischen reduktionsverfahren |
DE3439550A1 (de) * | 1984-10-29 | 1986-04-30 | Siemens Ag | Verfahren zum herstellen von silizium fuer solarzellen |
FR2585690B1 (fr) | 1985-07-31 | 1987-09-25 | Rhone Poulenc Spec Chim | Procede de purification sous plasma de silicium divise |
JPH0753569B2 (ja) * | 1986-08-07 | 1995-06-07 | 昭和アルミニウム株式会社 | ケイ素の精製方法 |
DE3635064A1 (de) * | 1986-10-15 | 1988-04-21 | Bayer Ag | Verfahren zur raffination von silicium und derart gereinigtes silicium |
US4854968A (en) * | 1986-12-25 | 1989-08-08 | Showa Aluminum Corporation | Method of preparing high-purity metal and rotary cooling member for use in apparatus therefor |
DE3727646A1 (de) * | 1987-08-19 | 1989-03-02 | Bayer Ag | Verfahren zur kontinuierlichen raffination von silicium |
JP3205352B2 (ja) * | 1990-05-30 | 2001-09-04 | 川崎製鉄株式会社 | シリコン精製方法及び装置 |
JP3000109B2 (ja) * | 1990-09-20 | 2000-01-17 | 株式会社住友シチックス尼崎 | 高純度シリコン鋳塊の製造方法 |
JPH04193706A (ja) * | 1990-11-28 | 1992-07-13 | Kawasaki Steel Corp | シリコンの精製方法 |
JPH05262512A (ja) * | 1992-03-17 | 1993-10-12 | Kawasaki Steel Corp | シリコンの精製方法 |
FR2729131B1 (fr) | 1995-01-09 | 1997-02-14 | Pechiney Electrometallurgie | Silicium et ferrosilicium metallurgique a basse teneur en oxygene |
FR2746785B1 (fr) * | 1996-04-02 | 1998-05-22 | Pechiney Electrometallurgie | Silicium metallurgique a structure controlee destine a la synthese des halogenosilanes |
CA2232777C (en) * | 1997-03-24 | 2001-05-15 | Hiroyuki Baba | Method for producing silicon for use in solar cells |
FR2772741B1 (fr) * | 1997-12-19 | 2000-03-10 | Centre Nat Rech Scient | Procede et installation d'affinage du silicium |
DE19919832A1 (de) * | 1999-04-30 | 2000-11-09 | Bosch Gmbh Robert | Verfahren zum anisotropen Plasmaätzen von Halbleitern |
AU2001285142A1 (en) * | 2000-08-21 | 2002-03-04 | Astropower Inc. | Method and apparatus for purifying silicon |
US7588745B2 (en) * | 2004-04-13 | 2009-09-15 | Si Options, Llc | Silicon-containing products |
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