BR0211193A - Silìcio metalúrgico de pureza elevada e processo de produção - Google Patents

Silìcio metalúrgico de pureza elevada e processo de produção

Info

Publication number
BR0211193A
BR0211193A BR0211193-4A BR0211193A BR0211193A BR 0211193 A BR0211193 A BR 0211193A BR 0211193 A BR0211193 A BR 0211193A BR 0211193 A BR0211193 A BR 0211193A
Authority
BR
Brazil
Prior art keywords
refining
production process
high purity
metallurgical silicon
silicon
Prior art date
Application number
BR0211193-4A
Other languages
English (en)
Other versions
BR0211193B1 (pt
Inventor
Gerard Baluais
Yves Caratini
Yves Delannoy
Christian Trassy
Original Assignee
Invensil
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Invensil, Centre Nat Rech Scient filed Critical Invensil
Publication of BR0211193A publication Critical patent/BR0211193A/pt
Publication of BR0211193B1 publication Critical patent/BR0211193B1/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Treatment Of Steel In Its Molten State (AREA)

Abstract

"SILìCIO METALúRGICO DE PUREZA ELEVADA E PROCESSO DE PRODUçãO". A invenção refere-se a um silício destinado notadamente à produção de células solares, contendo um total de impurezas compreendido entre 100 e 400 ppm, um teor em boro compreendido entre 0,5 e 3 ppm, uma relação entre teor em fósforo e boro compreendido entre 1 e 3, e um teor em elementos metálicos compreendido entre 30 e 300 ppm. A invenção tem igualmente por objeto um processo de produção de um silício dessa qualidade a partir de um silício metalúrgico afinado ao oxigênio ou ao cloro e contendo menos de 500 ppm de elementos metálicos, e comportando: - a refusão sob atmosfera neutra do silício afinado, no forno elétrico equipado com um cadinho quente; - a transferência do silício fundido, para realizar uma afinação sob plasma, em um forno elétrico equipado com um cadinho quente; - a afinação sob plasma com, como gás plasmagênio, uma mistura de argónio e de pelo menos um gás pertencente ao grupo constituído pelo cloro, pelo flúor, pelo HCI e pelo HF; - a fundição sob atmosfera controlada em uma lingoteira ou é realizada uma solidificação segregada.
BRPI0211193-4A 2001-07-23 2002-07-22 processo de produção de silìcio de qualidade fotovoltáica a partir de silìcio metalúrgico afinado ao oxigênio ou ao cloro e contendo menos de 500 ppm de elementos metálicos. BR0211193B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0109788A FR2827592B1 (fr) 2001-07-23 2001-07-23 Silicium metallurgique de haute purete et procede d'elaboration
FR0109788 2001-07-23
PCT/FR2002/002602 WO2003014019A1 (fr) 2001-07-23 2002-07-22 Silicium metallurgique de haute purete et procede d'elaboration

Publications (2)

Publication Number Publication Date
BR0211193A true BR0211193A (pt) 2004-08-10
BR0211193B1 BR0211193B1 (pt) 2011-02-08

Family

ID=8865792

Family Applications (2)

Application Number Title Priority Date Filing Date
BRPI0211193-4A BR0211193B1 (pt) 2001-07-23 2002-07-22 processo de produção de silìcio de qualidade fotovoltáica a partir de silìcio metalúrgico afinado ao oxigênio ou ao cloro e contendo menos de 500 ppm de elementos metálicos.
BRPI0211195-0A BR0211195B1 (pt) 2001-07-23 2002-07-22 processo de elaboração de silìcio de pureza média destinado a servir de matéria-prima na produção do silìcio de qualidade fotovoltaica ou eletrÈnica.

Family Applications After (1)

Application Number Title Priority Date Filing Date
BRPI0211195-0A BR0211195B1 (pt) 2001-07-23 2002-07-22 processo de elaboração de silìcio de pureza média destinado a servir de matéria-prima na produção do silìcio de qualidade fotovoltaica ou eletrÈnica.

Country Status (12)

Country Link
US (2) US7404941B2 (pt)
EP (2) EP1409406B1 (pt)
JP (2) JP4523274B2 (pt)
CN (2) CN1295147C (pt)
AT (2) ATE491668T1 (pt)
BR (2) BR0211193B1 (pt)
DE (2) DE60224394T2 (pt)
ES (2) ES2357501T3 (pt)
FR (1) FR2827592B1 (pt)
NO (2) NO335985B1 (pt)
WO (2) WO2003010090A1 (pt)
ZA (2) ZA200400276B (pt)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO333319B1 (no) * 2003-12-29 2013-05-06 Elkem As Silisiummateriale for fremstilling av solceller
FR2869028B1 (fr) * 2004-04-20 2006-07-07 Efd Induction Sa Sa Procede et installation de fabrication de blocs d'un materiau semiconducteur
JP4749730B2 (ja) * 2005-02-09 2011-08-17 新日鉄マテリアルズ株式会社 Ｓｉの精錬方法
EP2001797A4 (en) * 2006-03-15 2015-05-27 Reaction Science Inc SILICON MANUFACTURING METHOD FOR SOLAR CELLS AND OTHER APPLICATIONS
RU2445258C2 (ru) * 2006-04-04 2012-03-20 Калисолар Канада Инк. Способ очистки кремния
US7682585B2 (en) * 2006-04-25 2010-03-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Silicon refining process
DE102006034061A1 (de) * 2006-07-20 2008-01-24 REV Renewable Energy Ventures, Inc., Aloha Polysilanverarbeitung und Verwendung
WO2008026728A1 (fr) * 2006-08-31 2008-03-06 Mitsubishi Materials Corporation Silicium métallique et son procédé de fabrication
KR20090053807A (ko) * 2006-09-14 2009-05-27 실리슘 비캔커 인코포레이티드 저급 실리콘 재료를 정제하는 방법 및 그 장치
JP5210167B2 (ja) * 2006-09-29 2013-06-12 信越化学工業株式会社 珪素の精製方法
FR2908125B1 (fr) 2006-11-02 2009-11-20 Commissariat Energie Atomique Procede de purification de silicium metallurgique par solidification dirigee
CN100460320C (zh) * 2007-03-08 2009-02-11 陈应天 使用自旋仰角跟踪的太阳炉对材料进行真空提纯的方法
US20100178195A1 (en) * 2007-06-08 2010-07-15 Motoyuki Yamada Method of solidifying metallic silicon
US20080314445A1 (en) * 2007-06-25 2008-12-25 General Electric Company Method for the preparation of high purity silicon
US20080314446A1 (en) * 2007-06-25 2008-12-25 General Electric Company Processes for the preparation of solar-grade silicon and photovoltaic cells
JP4265697B2 (ja) * 2007-06-26 2009-05-20 パナソニック株式会社 金属シリコンの精製方法とシリコン塊の製造方法
WO2009012455A1 (en) 2007-07-18 2009-01-22 Oxane Materials, Inc. Proppants with carbide and/or nitride phases
EP2212249B1 (en) * 2007-09-13 2015-01-14 Silicio Ferrosolar, S.L.U. Process for the production of medium and high purity silicon from metallurgical grade silicon
JP5400782B2 (ja) 2007-10-03 2014-01-29 シリコア マテリアルズ インコーポレイテッド シリコン結晶を得るためのシリコン粉末の処理方法
CN101131371B (zh) * 2007-10-08 2010-06-02 苏州阿特斯阳光电力科技有限公司 一种精炼冶金硅的杂质含量检测分析方法
US20090208770A1 (en) * 2008-02-14 2009-08-20 Ralf Jonczyk Semiconductor sheets and methods for fabricating the same
FR2928641B1 (fr) * 2008-03-14 2010-03-26 Centre Nat Rech Scient Procede de purification de silicium pour applications photovoltaiques
US20090280336A1 (en) * 2008-05-08 2009-11-12 Ralf Jonczyk Semiconductor sheets and methods of fabricating the same
ITMI20081085A1 (it) * 2008-06-16 2009-12-17 N E D Silicon S P A Metodo per la preparazione di silicio di grado metallurgico di elevata purezza.
KR101275218B1 (ko) * 2008-08-01 2013-06-17 가부시키가이샤 아루박 금속의 정제 방법
JP5315345B2 (ja) * 2008-08-12 2013-10-16 株式会社アルバック シリコンの精製方法
JP5511945B2 (ja) * 2009-04-29 2014-06-04 シリコー マテリアルズ インコーポレイテッド Ｕｍｇ−ｓｉ材料精製のためのプロセス管理
US8562932B2 (en) 2009-08-21 2013-10-22 Silicor Materials Inc. Method of purifying silicon utilizing cascading process
DE102009056731A1 (de) 2009-12-04 2011-06-09 Rev Renewable Energy Ventures, Inc. Halogenierte Polysilane und Polygermane
CN101974780A (zh) * 2010-07-28 2011-02-16 常州天合光能有限公司 多晶铸锭晶体生长工艺
JP2012036043A (ja) * 2010-08-09 2012-02-23 Sumco Corp シリコンインゴットの製造装置および製造方法
CN102259859B (zh) * 2011-06-01 2012-12-12 宁夏银星多晶硅有限责任公司 一种低硼低磷冶金硅的生产工艺
ITRM20110426A1 (it) * 2011-08-08 2013-02-09 N E D Silicon S P A Metodo perfezionato per la preparazione di silicio di grado metallurgico ad alta purezza, in particolare per uso nel campo fotovoltaico.
TWI627131B (zh) * 2012-02-01 2018-06-21 美商希利柯爾材料股份有限公司 矽純化之模具及方法
KR101372524B1 (ko) 2012-02-21 2014-03-20 (주)리뉴에너지 일체식 아크 환원 및 슬래그 정련 장치
CN102627394B (zh) * 2012-04-02 2014-03-05 锦州新世纪多晶硅材料有限公司 一种采用冶金法降低金属硅中硼杂质含量的方法
US20150299826A1 (en) * 2012-12-10 2015-10-22 Showa Denko K.K. Method of producing silicon-containing aluminum alloy ingot
WO2017024378A1 (en) * 2015-08-07 2017-02-16 Pyrogenesis Canada Inc. Silica to high purity silicon production process
US20220212937A1 (en) * 2019-04-30 2022-07-07 Wacker Chemie Ag Method for refining crude silicon melts using a particulate mediator
CN115465865B (zh) * 2022-08-11 2023-08-04 商南中剑实业有限责任公司 一种同步去除工业硅中硼杂质和磷杂质的装置及其方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
LU60094A1 (pt) * 1969-12-24 1971-08-17
US4298423A (en) * 1976-12-16 1981-11-03 Semix Incorporated Method of purifying silicon
US4193975A (en) * 1977-11-21 1980-03-18 Union Carbide Corporation Process for the production of improved refined metallurgical silicon
JPS5913444B2 (ja) * 1977-11-21 1984-03-29 ユニオン・カ−バイド・コ−ポレ−シヨン 精製された金属シリコン製造方法
CA1147698A (en) * 1980-10-15 1983-06-07 Maher I. Boulos Purification of metallurgical grade silicon
DE3215981A1 (de) * 1982-04-29 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen hochreiner ausgangsmaterialien fuer die fertigung von silizium fuer solarzellen nach dem carbothermischen reduktionsverfahren
DE3439550A1 (de) * 1984-10-29 1986-04-30 Siemens Ag Verfahren zum herstellen von silizium fuer solarzellen
FR2585690B1 (fr) 1985-07-31 1987-09-25 Rhone Poulenc Spec Chim Procede de purification sous plasma de silicium divise
JPH0753569B2 (ja) * 1986-08-07 1995-06-07 昭和アルミニウム株式会社 ケイ素の精製方法
DE3635064A1 (de) * 1986-10-15 1988-04-21 Bayer Ag Verfahren zur raffination von silicium und derart gereinigtes silicium
US4854968A (en) * 1986-12-25 1989-08-08 Showa Aluminum Corporation Method of preparing high-purity metal and rotary cooling member for use in apparatus therefor
DE3727646A1 (de) * 1987-08-19 1989-03-02 Bayer Ag Verfahren zur kontinuierlichen raffination von silicium
JP3205352B2 (ja) * 1990-05-30 2001-09-04 川崎製鉄株式会社 シリコン精製方法及び装置
JP3000109B2 (ja) * 1990-09-20 2000-01-17 株式会社住友シチックス尼崎 高純度シリコン鋳塊の製造方法
JPH04193706A (ja) * 1990-11-28 1992-07-13 Kawasaki Steel Corp シリコンの精製方法
JPH05262512A (ja) * 1992-03-17 1993-10-12 Kawasaki Steel Corp シリコンの精製方法
FR2729131B1 (fr) 1995-01-09 1997-02-14 Pechiney Electrometallurgie Silicium et ferrosilicium metallurgique a basse teneur en oxygene
FR2746785B1 (fr) * 1996-04-02 1998-05-22 Pechiney Electrometallurgie Silicium metallurgique a structure controlee destine a la synthese des halogenosilanes
CA2232777C (en) * 1997-03-24 2001-05-15 Hiroyuki Baba Method for producing silicon for use in solar cells
FR2772741B1 (fr) * 1997-12-19 2000-03-10 Centre Nat Rech Scient Procede et installation d'affinage du silicium
DE19919832A1 (de) * 1999-04-30 2000-11-09 Bosch Gmbh Robert Verfahren zum anisotropen Plasmaätzen von Halbleitern
AU2001285142A1 (en) * 2000-08-21 2002-03-04 Astropower Inc. Method and apparatus for purifying silicon
US7588745B2 (en) * 2004-04-13 2009-09-15 Si Options, Llc Silicon-containing products

Also Published As

Publication number Publication date
JP4523274B2 (ja) 2010-08-11
NO20040285L (no) 2004-03-23
BR0211195A (pt) 2004-08-10
ES2357501T3 (es) 2011-04-27
US7858063B2 (en) 2010-12-28
FR2827592A1 (fr) 2003-01-24
US20050074388A1 (en) 2005-04-07
ZA200400346B (en) 2005-03-30
US20050053539A1 (en) 2005-03-10
EP1409406A1 (fr) 2004-04-21
NO20040284L (no) 2004-03-23
DE60224394T2 (de) 2008-12-18
ATE382581T1 (de) 2008-01-15
DE60224394D1 (de) 2008-02-14
JP4410847B2 (ja) 2010-02-03
DE60238615D1 (de) 2011-01-27
WO2003014019A1 (fr) 2003-02-20
EP1409405A1 (fr) 2004-04-21
ATE491668T1 (de) 2011-01-15
WO2003010090A1 (fr) 2003-02-06
NO335984B1 (no) 2015-04-13
ES2298390T3 (es) 2008-05-16
EP1409406B1 (fr) 2008-01-02
CN1295146C (zh) 2007-01-17
EP1409405B1 (fr) 2010-12-15
BR0211193B1 (pt) 2011-02-08
JP2004537491A (ja) 2004-12-16
ZA200400276B (en) 2005-03-30
CN1295147C (zh) 2007-01-17
FR2827592B1 (fr) 2003-08-22
CN1543435A (zh) 2004-11-03
CN1543436A (zh) 2004-11-03
BR0211195B1 (pt) 2010-08-10
NO335985B1 (no) 2015-04-13
US7404941B2 (en) 2008-07-29
JP2004535354A (ja) 2004-11-25

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Owner name: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (FR)

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B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
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