WO2009001547A1 - 金属シリコンの精製方法とシリコン塊の製造方法 - Google Patents

金属シリコンの精製方法とシリコン塊の製造方法 Download PDF

Info

Publication number
WO2009001547A1
WO2009001547A1 PCT/JP2008/001627 JP2008001627W WO2009001547A1 WO 2009001547 A1 WO2009001547 A1 WO 2009001547A1 JP 2008001627 W JP2008001627 W JP 2008001627W WO 2009001547 A1 WO2009001547 A1 WO 2009001547A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
purifying
silicon metal
weight
less
Prior art date
Application number
PCT/JP2008/001627
Other languages
English (en)
French (fr)
Inventor
Yuma Kamiyama
Kazuyoshi Honda
Yasuharu Shinokawa
Hiromasa Yagi
Tomofumi Yanagi
Kunihiko Bessho
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to JP2008549303A priority Critical patent/JP4265697B2/ja
Priority to US12/440,531 priority patent/US8668895B2/en
Priority to CN2008800140090A priority patent/CN101668701B/zh
Publication of WO2009001547A1 publication Critical patent/WO2009001547A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)

Abstract

　金属シリコンの精製方法では、１０００ｐｐｍ以上、１００００ｐｐｍ以下の重量比のアルミニウムを含み、シリコンの濃度が９８重量％以上９９．９重量％以下である金属シリコンを準備する。この金属シリコンを圧力が１００Ｐａ以上、１０００Ｐａ以下の不活性雰囲気で、１５００°C以上、１６００°C以下に加熱し、一定時間保持する。
PCT/JP2008/001627 2007-06-26 2008-06-24 金属シリコンの精製方法とシリコン塊の製造方法 WO2009001547A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008549303A JP4265697B2 (ja) 2007-06-26 2008-06-24 金属シリコンの精製方法とシリコン塊の製造方法
US12/440,531 US8668895B2 (en) 2007-06-26 2008-06-24 Purifying method for metallic silicon and manufacturing method of silicon ingot
CN2008800140090A CN101668701B (zh) 2007-06-26 2008-06-24 金属硅的精制方法和硅块的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007167135 2007-06-26
JP2007-167135 2007-06-26

Publications (1)

Publication Number Publication Date
WO2009001547A1 true WO2009001547A1 (ja) 2008-12-31

Family

ID=40185372

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001627 WO2009001547A1 (ja) 2007-06-26 2008-06-24 金属シリコンの精製方法とシリコン塊の製造方法

Country Status (5)

Country Link
US (1) US8668895B2 (ja)
JP (1) JP4265697B2 (ja)
KR (1) KR20100033956A (ja)
CN (1) CN101668701B (ja)
WO (1) WO2009001547A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101733325B1 (ko) 2012-06-25 2017-05-08 실리코르 머티리얼즈 인코포레이티드 실리콘의 정제 방법
KR101663435B1 (ko) 2012-06-25 2016-10-14 실리코르 머티리얼즈 인코포레이티드 알루미늄의 정제 방법 및 실리콘을 정제하기 위한 정제된 알루미늄의 용도

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60195016A (ja) * 1984-03-16 1985-10-03 Agency Of Ind Science & Technol 金属けい素の精製法
JPS62292613A (ja) * 1986-06-10 1987-12-19 Kawasaki Steel Corp 高純度けい素の精製方法
JPH01176211A (ja) * 1988-01-05 1989-07-12 Nippon Sheet Glass Co Ltd 金属シリコンの脱炭方法
JPH10182134A (ja) * 1996-10-31 1998-07-07 Kawasaki Steel Corp シリコンの精製方法
JP2006027940A (ja) * 2004-07-14 2006-02-02 Sharp Corp 金属の精製方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0533070A (ja) 1991-05-11 1993-02-09 Toho Aen Kk 金属珪素粉末中の不純物の除去方法
JP2905353B2 (ja) 1993-02-04 1999-06-14 川崎製鉄株式会社 金属シリコンの精製方法
JP3497355B2 (ja) * 1997-10-06 2004-02-16 信越フィルム株式会社 シリコンの精製方法
FR2827592B1 (fr) * 2001-07-23 2003-08-22 Invensil Silicium metallurgique de haute purete et procede d'elaboration
CN1299983C (zh) * 2003-07-22 2007-02-14 龚炳生 光电级硅的制造方法
JP4722403B2 (ja) 2004-02-20 2011-07-13 新日鉄マテリアルズ株式会社 シリコン精製装置及びシリコン精製方法
JP4672559B2 (ja) 2005-01-26 2011-04-20 新日鉄マテリアルズ株式会社 シリコン精製装置及びシリコン精製方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60195016A (ja) * 1984-03-16 1985-10-03 Agency Of Ind Science & Technol 金属けい素の精製法
JPS62292613A (ja) * 1986-06-10 1987-12-19 Kawasaki Steel Corp 高純度けい素の精製方法
JPH01176211A (ja) * 1988-01-05 1989-07-12 Nippon Sheet Glass Co Ltd 金属シリコンの脱炭方法
JPH10182134A (ja) * 1996-10-31 1998-07-07 Kawasaki Steel Corp シリコンの精製方法
JP2006027940A (ja) * 2004-07-14 2006-02-02 Sharp Corp 金属の精製方法

Also Published As

Publication number Publication date
JP4265697B2 (ja) 2009-05-20
CN101668701A (zh) 2010-03-10
KR20100033956A (ko) 2010-03-31
CN101668701B (zh) 2011-12-07
US8668895B2 (en) 2014-03-11
US20090280049A1 (en) 2009-11-12
JPWO2009001547A1 (ja) 2010-08-26

Similar Documents

Publication Publication Date Title
WO2010017364A3 (en) Low cost routes to high purity silicon and derivatives thereof
WO2009013540A3 (en) Catalyst
WO2010007484A8 (en) Aluminum alloy, method of casting aluminum alloy, and method of producing aluminum alloy product
WO2012003522A3 (de) Magnesiumlegierung
WO2009052792A9 (de) Werkstoff für ein gasturbinenbauteil, verfahren zur herstellung eines gasturbinenbauteils sowie gasturbinenbauteil
WO2008141823A3 (de) Metalldotierter zeolith und verfahren zu dessen herstellung
NO20035830L (no) Silisiummateriale for fremstilling av solceller
WO2010037709A3 (de) Herstellung von solar-silicium aus siliciumdioxid
TW200604131A (en) Method for purifying silicon carbide coated structures
TW200631963A (en) Process for preparing polymers
WO2012146653A3 (en) Heat-treatment of an alloy for a bearing component
WO2008140641A3 (en) Pure paliperidone and processes for preparing thereof
WO2008093453A1 (ja) オーステナイト系ステンレス鋼、及びその水素除去方法
WO2009089950A3 (de) Verfahren zur verminderung des gehaltes von elementen, wie bor, in halogensilanen sowie anlage zur durchführung des verfahrens
WO2009157018A3 (en) Novel polymorphic forms of perindopril (l)-arginine and process for the preparation thereof
MX336103B (es) Metodo para fosfatar selectivamente una construccion de metal mixta.
MY160972A (en) Aluminium alloy substrate for magnetic disks and manufacturing method thereof
WO2009033900A3 (de) Verfahren zum reinigen von polykristallinem silicium
WO2008122579A3 (de) Verfahren zur herstellung eines heteroatom enthaltenden silikates
WO2009143825A3 (de) Halogenidhaltiges silicium, verfahren zur herstellung desselben und verwendung desselben
WO2009027200A3 (de) Verfahren zum reinigen von polykristallinem silicium
WO2006095663A3 (en) Method for producing high purity silicon
WO2010086085A3 (de) Verfahren zum betreiben einer oxidationsanlage sowie oxidationsanlage
WO2009001547A1 (ja) 金属シリコンの精製方法とシリコン塊の製造方法
WO2008149985A1 (ja) 金属珪素の凝固方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880014009.0

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2008549303

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020097000977

Country of ref document: KR

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08764210

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12440531

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08764210

Country of ref document: EP

Kind code of ref document: A1