NO20035830L - Silisiummateriale for fremstilling av solceller - Google Patents

Silisiummateriale for fremstilling av solceller

Info

Publication number
NO20035830L
NO20035830L NO20035830A NO20035830A NO20035830L NO 20035830 L NO20035830 L NO 20035830L NO 20035830 A NO20035830 A NO 20035830A NO 20035830 A NO20035830 A NO 20035830A NO 20035830 L NO20035830 L NO 20035830L
Authority
NO
Norway
Prior art keywords
production
silicon
ppm
solar cells
type
Prior art date
Application number
NO20035830A
Other languages
English (en)
Other versions
NO333319B1 (no
Inventor
Kenneth Friestad
Erik Enebakk
Ragnar Tronstad
Cyrus Zahedi
Christian Dethloff
Original Assignee
Elkem Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elkem Materials filed Critical Elkem Materials
Priority to NO20035830A priority Critical patent/NO333319B1/no
Priority to US10/585,004 priority patent/US7381392B2/en
Priority to PCT/NO2004/000003 priority patent/WO2005063621A1/en
Priority to BRPI0417807-6A priority patent/BRPI0417807B1/pt
Priority to CNB2004800394173A priority patent/CN100457613C/zh
Priority to CA002548936A priority patent/CA2548936C/en
Priority to ES04701439.4T priority patent/ES2441725T3/es
Priority to EP04701439.4A priority patent/EP1699737B1/en
Priority to EA200601259A priority patent/EA009791B1/ru
Priority to AU2004308879A priority patent/AU2004308879B2/en
Priority to EP13159702.3A priority patent/EP2607308A1/en
Priority to JP2006546879A priority patent/JP4580939B2/ja
Publication of NO20035830L publication Critical patent/NO20035830L/no
Priority to US12/108,254 priority patent/US7931883B2/en
Publication of NO333319B1 publication Critical patent/NO333319B1/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Den foreliggende oppfinnelse vedrører silisiummateriale for fremstilling av retningsorientert størknede Czochralski, flytsone eller multikrystallinske silisium ingots, tynne silisiumplater eller bånd for fremstilling av silisiumskiver for fremstilling av PV solceller hvor silisiummaterialet inneholder mellom 0,2 og 1 0 ppma bor og mellom 0, 1 og 1 0 ppma fosfor distribuert i materialet. Oppfinnelsen vedrører videre rettet størknet Czochralski, flytsone eller multikrystallinsk silisiumingot eller tynne silisiumplater eller -bånd for fremstilling av tynne silisiumskiver for fremstilling av solceller, inneholdende 0,2 ppma og 10 ppma bor og mellom 0,1 ppma og 10 ppma fosfor, hvilken silisiumingot har et omvandlingspunkt fra p-type til n-type eller fra n-type til p-type ved en posisjon mellom 40 og 99% av ingothøyden eller av tykkelsen av platene eller båndene og har en motstandsprofil beskrevet av en eksponentiell kurve med en startverdi mellom 0,4 og 10 ohm cm og hvor motstandsverdien øker mot omvandlingspunktet. Oppfinnelsen vedrører også en fremgangsmåte for fremstilling av silisiummateriale for fremstilling av rettet størknede silisiumingoter, tynne plater eller -bånd for fremstilling av silisiumskiver for PV solceller.
NO20035830A 2003-12-29 2003-12-29 Silisiummateriale for fremstilling av solceller NO333319B1 (no)

Priority Applications (13)

Application Number Priority Date Filing Date Title
NO20035830A NO333319B1 (no) 2003-12-29 2003-12-29 Silisiummateriale for fremstilling av solceller
EP04701439.4A EP1699737B1 (en) 2003-12-29 2004-01-12 Method for making silicon feedstock for solar cells
EA200601259A EA009791B1 (ru) 2003-12-29 2004-01-12 Кремниевое исходное сырьё для солнечных элементов
BRPI0417807-6A BRPI0417807B1 (pt) 2003-12-29 2004-01-12 Método para a produção de material de alimentação de silício para produzir lingotes de silício multicristalinos ou zona flutuante, solidificados direcionalmente por Czochralski, material de alimentação de silício,e, lingote de silício, ou lâmina ou fita de silício para produzir pastilhas para células solares
CNB2004800394173A CN100457613C (zh) 2003-12-29 2004-01-12 太阳能电池的硅原料
CA002548936A CA2548936C (en) 2003-12-29 2004-01-12 Silicon feedstock for solar cells
ES04701439.4T ES2441725T3 (es) 2003-12-29 2004-01-12 Método para obtener materia prima de silicio para células solares
US10/585,004 US7381392B2 (en) 2003-12-29 2004-01-12 Silicon feedstock for solar cells
PCT/NO2004/000003 WO2005063621A1 (en) 2003-12-29 2004-01-12 Silicon feedstock for solar cells
AU2004308879A AU2004308879B2 (en) 2003-12-29 2004-01-12 Silicon feedstock for solar cells
EP13159702.3A EP2607308A1 (en) 2003-12-29 2004-01-12 Silicon feedstock for solar cells
JP2006546879A JP4580939B2 (ja) 2003-12-29 2004-01-12 太陽電池用のシリコン供給原料
US12/108,254 US7931883B2 (en) 2003-12-29 2008-04-23 Silicon feedstock for solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20035830A NO333319B1 (no) 2003-12-29 2003-12-29 Silisiummateriale for fremstilling av solceller

Publications (2)

Publication Number Publication Date
NO20035830L true NO20035830L (no) 2005-06-30
NO333319B1 NO333319B1 (no) 2013-05-06

Family

ID=34738092

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20035830A NO333319B1 (no) 2003-12-29 2003-12-29 Silisiummateriale for fremstilling av solceller

Country Status (11)

Country Link
US (2) US7381392B2 (no)
EP (2) EP2607308A1 (no)
JP (1) JP4580939B2 (no)
CN (1) CN100457613C (no)
AU (1) AU2004308879B2 (no)
BR (1) BRPI0417807B1 (no)
CA (1) CA2548936C (no)
EA (1) EA009791B1 (no)
ES (1) ES2441725T3 (no)
NO (1) NO333319B1 (no)
WO (1) WO2005063621A1 (no)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007001184A1 (en) 2004-12-27 2007-01-04 Elkem Solar As Method for producing directionally solidified silicon ingots

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DE102005061690A1 (de) * 2005-12-21 2007-07-05 Solmic Gmbh Verfahren zur Herstellung solartauglichen Siliziums
EP2024285B1 (en) * 2006-04-04 2014-06-11 Silicor Materials Inc. Method for purifying silicon
US7682585B2 (en) * 2006-04-25 2010-03-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Silicon refining process
AU2007295860A1 (en) * 2006-09-14 2008-03-20 Silicium Becancour Inc. Process and apparatus for purifying low-grade silicon material
NO333757B1 (no) * 2006-12-04 2013-09-09 Elkem Solar As Solceller
US7651566B2 (en) * 2007-06-27 2010-01-26 Fritz Kirscht Method and system for controlling resistivity in ingots made of compensated feedstock silicon
US8968467B2 (en) * 2007-06-27 2015-03-03 Silicor Materials Inc. Method and system for controlling resistivity in ingots made of compensated feedstock silicon
UA97691C2 (ru) 2007-09-13 2012-03-12 Силисиум Беканкур Инк. Способ получения твердого поликристаллического кремния высокой чистоты
KR101247666B1 (ko) 2007-10-03 2013-04-01 실리코르 머티리얼즈 인코포레이티드 실리콘 결정을 얻기 위한 실리콘 분말의 가공 방법
WO2009062117A1 (en) * 2007-11-09 2009-05-14 Sunpreme, Inc. Low-cost solar cells and methods for their production
US8758507B2 (en) * 2008-06-16 2014-06-24 Silicor Materials Inc. Germanium enriched silicon material for making solar cells
US7887633B2 (en) * 2008-06-16 2011-02-15 Calisolar, Inc. Germanium-enriched silicon material for making solar cells
ITMI20081085A1 (it) * 2008-06-16 2009-12-17 N E D Silicon S P A Metodo per la preparazione di silicio di grado metallurgico di elevata purezza.
CN101676203B (zh) 2008-09-16 2015-06-10 储晞 生产高纯颗粒硅的方法
DE102009008371A1 (de) 2009-02-11 2010-08-12 Schott Solar Ag Integraler Prozeß von Waferherstellung bis Modulfertigung zur Herstellung von Wafern, Solarzellen und Solarmodulen
US20100213643A1 (en) * 2009-02-26 2010-08-26 Gadgil Prasad N Rapid synthesis of polycrystalline silicon sheets for photo-voltaic solar cell manufacturing
KR20120014011A (ko) * 2009-04-29 2012-02-15 칼리솔라, 인코포레이티드 고순도화한 금속급 실리콘 재료 정제를 위한 공정 제어
WO2010127184A1 (en) * 2009-04-29 2010-11-04 Calisolar, Inc. Quality control process for umg-si feedstock
US8547121B2 (en) * 2009-04-29 2013-10-01 Silicor Materials Inc. Quality control process for UMG-SI feedstock
US8562932B2 (en) 2009-08-21 2013-10-22 Silicor Materials Inc. Method of purifying silicon utilizing cascading process
KR101180353B1 (ko) * 2010-07-01 2012-09-06 연세대학교 산학협력단 태양전지용 실리콘제조를 위한 ａｃｉｄ ｌｅａｃｈｉｎｇ을 이용한 ＭＧ-Ｓｉ중 불순물의 정련방법
CN102021650B (zh) * 2010-12-31 2012-06-06 常州天合光能有限公司 一种大型多晶锭的生产方法
CN102191562B (zh) * 2011-04-25 2012-08-29 苏州阿特斯阳光电力科技有限公司 一种n型晶体硅太阳电池的硼扩散方法
FR2978549B1 (fr) * 2011-07-27 2014-03-28 Commissariat Energie Atomique Determination des teneurs en dopants dans un echantillon de silicium compense
NO335110B1 (no) * 2011-10-06 2014-09-15 Elkem Solar As Fremgangsmåte for fremstilling av silisiummonokrystall og multikrystalline silisiumingoter
CN103014839B (zh) * 2013-01-09 2016-07-27 英利集团有限公司 一种p型掺杂剂及其制备方法
CN103147118B (zh) * 2013-02-25 2016-03-30 天津市环欧半导体材料技术有限公司 一种利用直拉区熔法制备太阳能级硅单晶的方法
NO339608B1 (no) 2013-09-09 2017-01-09 Elkem Solar As Multikrystallinske silisiumingoter, silisiummasterlegering, fremgangsmåte for å øke utbyttet av multikrystallinske silisiumingoter for solceller
NO336720B1 (no) * 2013-09-09 2015-10-26 Elkem Solar As Fremgangsmåte for forbedring av effektiviteten av solceller.
FR3010721B1 (fr) * 2013-09-17 2017-02-24 Commissariat Energie Atomique Procede de fabrication d'un lingot de silicium presentant une concentration homogene en phosphore

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007001184A1 (en) 2004-12-27 2007-01-04 Elkem Solar As Method for producing directionally solidified silicon ingots
EP1848843A4 (en) * 2004-12-27 2011-09-28 Elkem Solar As METHOD FOR THE PRODUCTION OF DIRECTED FIRST STAINED SILICON BARS

Also Published As

Publication number Publication date
WO2005063621A1 (en) 2005-07-14
NO333319B1 (no) 2013-05-06
US7931883B2 (en) 2011-04-26
AU2004308879B2 (en) 2008-01-03
EP1699737A1 (en) 2006-09-13
BRPI0417807B1 (pt) 2014-09-23
ES2441725T3 (es) 2014-02-06
JP4580939B2 (ja) 2010-11-17
BRPI0417807A (pt) 2007-04-10
AU2004308879A1 (en) 2005-07-14
EP1699737B1 (en) 2014-01-01
EP2607308A1 (en) 2013-06-26
US20080206123A1 (en) 2008-08-28
CN100457613C (zh) 2009-02-04
US20070128099A1 (en) 2007-06-07
EA009791B1 (ru) 2008-04-28
CA2548936A1 (en) 2005-07-14
JP2007516928A (ja) 2007-06-28
EA200601259A1 (ru) 2007-02-27
CN1902129A (zh) 2007-01-24
US7381392B2 (en) 2008-06-03
CA2548936C (en) 2009-08-18

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