WO2011136479A3 - 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치 - Google Patents

태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치 Download PDF

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Publication number
WO2011136479A3
WO2011136479A3 PCT/KR2011/002357 KR2011002357W WO2011136479A3 WO 2011136479 A3 WO2011136479 A3 WO 2011136479A3 KR 2011002357 W KR2011002357 W KR 2011002357W WO 2011136479 A3 WO2011136479 A3 WO 2011136479A3
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WO
WIPO (PCT)
Prior art keywords
manufacturing
silicon
solar cell
polycrystal
polycrystal silicon
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PCT/KR2011/002357
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English (en)
French (fr)
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WO2011136479A2 (ko
Inventor
문상진
소원욱
구명회
박동순
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한국화학연구원
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Publication date
Application filed by 한국화학연구원 filed Critical 한국화학연구원
Priority to US13/643,422 priority Critical patent/US9263624B2/en
Priority to CN201180021330.3A priority patent/CN102934239B/zh
Publication of WO2011136479A2 publication Critical patent/WO2011136479A2/ko
Publication of WO2011136479A3 publication Critical patent/WO2011136479A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치에 관한 것으로, 더욱 상세하게는 진공챔버 내부에서 원료 실리콘을 가열하여 용융시킨 후, 냉각시켜 다결정 실리콘 잉곳을 제조하는 장치에 있어서, 상기 진공챔버 내부에 수평방향으로 상호 이격되도록 배열되며, 원료 실리콘이 각각 담겨져 다결정 실리콘 잉곳이 제조되는 다수의 도가니, 상기 각 도가니를 가열시켜 담겨진 원료 실리콘을 용융시키도록 상기 각 도가니의 외측에 구비되는 히터수단, 및 상기 히터수단에 의해 용융된 실리콘을 한방향으로 냉각시켜 다결정 잉곳으로 성장시키기 위해 상기 도가니를 냉각시키는 냉각수단을 포함하여 이루어진다.
PCT/KR2011/002357 2010-04-29 2011-04-05 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치 WO2011136479A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/643,422 US9263624B2 (en) 2010-04-29 2011-04-05 High-output apparatus for manufacturing a polycrystal silicon ingot for a solar cell
CN201180021330.3A CN102934239B (zh) 2010-04-29 2011-04-05 太阳能电池用的多晶硅锭的高输出制造设备

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0040101 2010-04-29
KR1020100040101A KR101139845B1 (ko) 2010-04-29 2010-04-29 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치

Publications (2)

Publication Number Publication Date
WO2011136479A2 WO2011136479A2 (ko) 2011-11-03
WO2011136479A3 true WO2011136479A3 (ko) 2011-12-29

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PCT/KR2011/002357 WO2011136479A2 (ko) 2010-04-29 2011-04-05 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치

Country Status (5)

Country Link
US (1) US9263624B2 (ko)
KR (1) KR101139845B1 (ko)
CN (1) CN102934239B (ko)
TW (1) TWI412640B (ko)
WO (1) WO2011136479A2 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101216523B1 (ko) * 2012-03-20 2012-12-31 유호정 멀티-도가니 타입 실리콘 잉곳 성장 장치
GB201319671D0 (en) * 2013-11-07 2013-12-25 Ebner Ind Ofenbau Controlling a temperature of a crucible inside an oven
CN104502826A (zh) * 2014-12-03 2015-04-08 东莞市长安东阳光铝业研发有限公司 一种快速测试多晶硅铸锭的方法
CN105696072A (zh) * 2016-04-12 2016-06-22 常州亿晶光电科技有限公司 蓝宝石长晶炉
KR101816109B1 (ko) * 2016-05-30 2018-01-08 주식회사 사파이어테크놀로지 탄화규소 단결정 잉곳의 성장장치 및 그 성장방법
CN107881555A (zh) * 2017-10-24 2018-04-06 佛山市三水兴达涂料有限公司 一种半导体材料的加工装置及加工工艺
CN109371464B (zh) * 2018-11-19 2023-08-11 江苏斯力康科技有限公司 生产太阳能多晶硅用定向凝固装置
CN109706522A (zh) * 2019-03-05 2019-05-03 晶科能源有限公司 一种多晶硅铸锭炉及其隔热笼
CN110241457A (zh) * 2019-07-01 2019-09-17 江阴东升新能源股份有限公司 硅芯方锭铸锭装置及其铸造工艺
CN110592659B (zh) * 2019-10-21 2021-09-21 哈尔滨元雅新材料科技有限公司 一种多坩埚梯度冷凝晶体生长装置及其用于生长大尺寸溴化镧单晶的方法
CN113970242B (zh) * 2021-11-05 2023-11-10 中北大学 一种铝合金高通量熔炼装置及方法
CN117109301B (zh) * 2023-10-25 2023-12-22 山西第三代半导体技术创新中心有限公司 一种用于制备大孔径碳化硅粉料的坩埚结构

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JP2006335582A (ja) * 2005-05-31 2006-12-14 Daiichi Kiden:Kk 結晶シリコン製造装置とその製造方法
JP2007099579A (ja) * 2005-10-06 2007-04-19 Nippon Telegr & Teleph Corp <Ntt> 結晶製造方法およびその装置
KR20070118945A (ko) * 2006-06-13 2007-12-18 김영조 다결정 실리콘 잉곳 제조장치
KR20090035336A (ko) * 2007-10-05 2009-04-09 주식회사 글로실 힌지를 이용한 도어 개폐장치가 구비된 태양전지용 다결정실리콘 주괴 제조 장치

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DE102007026298A1 (de) * 2007-06-06 2008-12-11 Freiberger Compound Materials Gmbh Anordnung und Verfahren zur Herstellung eines Kristalls aus der Schmelze eines Rohmaterials sowie Einkristall
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Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2006335582A (ja) * 2005-05-31 2006-12-14 Daiichi Kiden:Kk 結晶シリコン製造装置とその製造方法
JP2007099579A (ja) * 2005-10-06 2007-04-19 Nippon Telegr & Teleph Corp <Ntt> 結晶製造方法およびその装置
KR20070118945A (ko) * 2006-06-13 2007-12-18 김영조 다결정 실리콘 잉곳 제조장치
KR20090035336A (ko) * 2007-10-05 2009-04-09 주식회사 글로실 힌지를 이용한 도어 개폐장치가 구비된 태양전지용 다결정실리콘 주괴 제조 장치

Also Published As

Publication number Publication date
CN102934239A (zh) 2013-02-13
TW201142094A (en) 2011-12-01
US20130036769A1 (en) 2013-02-14
US9263624B2 (en) 2016-02-16
KR20110120617A (ko) 2011-11-04
TWI412640B (zh) 2013-10-21
WO2011136479A2 (ko) 2011-11-03
CN102934239B (zh) 2015-08-12
KR101139845B1 (ko) 2012-04-30

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