WO2010024541A3 - 잉곳 제조 장치 및 제조 방법 - Google Patents

잉곳 제조 장치 및 제조 방법 Download PDF

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Publication number
WO2010024541A3
WO2010024541A3 PCT/KR2009/004458 KR2009004458W WO2010024541A3 WO 2010024541 A3 WO2010024541 A3 WO 2010024541A3 KR 2009004458 W KR2009004458 W KR 2009004458W WO 2010024541 A3 WO2010024541 A3 WO 2010024541A3
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WO
WIPO (PCT)
Prior art keywords
crucible
manufacturing
support
ingot
present
Prior art date
Application number
PCT/KR2009/004458
Other languages
English (en)
French (fr)
Other versions
WO2010024541A2 (ko
Inventor
도진영
권혁대
고정익
양희철
이인하
박완우
김봉철
Original Assignee
주식회사 아바코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 아바코 filed Critical 주식회사 아바코
Priority to CN2009801332302A priority Critical patent/CN102131963B/zh
Publication of WO2010024541A2 publication Critical patent/WO2010024541A2/ko
Publication of WO2010024541A3 publication Critical patent/WO2010024541A3/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 잉곳 제조 장치 및 제조 방법에 관한 것이다. 본 발명에 따른 잉곳 제조 장치는 원료를 담는 도가니와, 도가니를 가열하는 가열 수단과, 도가니를 지지하는 지지대와, 가열 수단 외부에 마련되며 지지대와 소정 간격 이격되는 단열재와, 도가니 지지대 하부에 마련되며, 회전 가능한 냉각 수단을 포함한다. 본 발명에 의하면 회전하는 냉각 수단의 냉각열이 도가니 하부 뿐만 아니라 단열재의 하부와 지지대 사이의 공간을 통해 도가니 측부까지 전달되어 실리콘 융액이 중심부와 측부에서 동시에 응고되도록 하여 결정의 방향성이 우수한 실리콘 잉곳을 제조할 수 있다.
PCT/KR2009/004458 2008-08-26 2009-08-11 잉곳 제조 장치 및 제조 방법 WO2010024541A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009801332302A CN102131963B (zh) 2008-08-26 2009-08-11 用于制造锭块的设备和方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0083349 2008-08-26
KR1020080083349A KR20100024675A (ko) 2008-08-26 2008-08-26 잉곳 제조 장치 및 제조 방법

Publications (2)

Publication Number Publication Date
WO2010024541A2 WO2010024541A2 (ko) 2010-03-04
WO2010024541A3 true WO2010024541A3 (ko) 2010-07-01

Family

ID=41722070

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/004458 WO2010024541A2 (ko) 2008-08-26 2009-08-11 잉곳 제조 장치 및 제조 방법

Country Status (3)

Country Link
KR (1) KR20100024675A (ko)
CN (1) CN102131963B (ko)
WO (1) WO2010024541A2 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101104191B1 (ko) * 2010-06-23 2012-01-09 이호도 비정질합금을 이용한 임플란트의 제조장치 및 제조방법
WO2012086856A1 (ko) * 2010-12-21 2012-06-28 (주)티피에스 단결정 사파이어 잉곳 성장장치
US20120280429A1 (en) * 2011-05-02 2012-11-08 Gt Solar, Inc. Apparatus and method for producing a multicrystalline material having large grain sizes
KR20140059803A (ko) * 2011-09-14 2014-05-16 엠이엠씨 싱가포르 피티이. 엘티디. 이동식 열교환기를 구비한 방향성 응고로
US20130239620A1 (en) * 2011-09-14 2013-09-19 Memc Singapore, Pte. Ltd (Uen200614797D) Directional Solidification Furnace Having Movable Insulation System
US20150086464A1 (en) * 2012-01-27 2015-03-26 Gtat Corporation Method of producing monocrystalline silicon
KR101339377B1 (ko) * 2012-06-19 2013-12-09 주식회사 인솔텍 실리콘 잉곳 제조장치 및 이를 이용한 잉곳 제조방법
KR101412315B1 (ko) * 2012-06-28 2014-06-25 현대제철 주식회사 잉곳 열처리 온도측정장치 및 이를 갖는 열처리 설비
ITTO20130258A1 (it) * 2013-03-28 2014-09-29 Saet Spa Dispositivo e metodo per produrre un blocco di materiale multicristallino, in particolare silicio, mediante solidificazione direzionale
US10633759B2 (en) 2013-09-30 2020-04-28 Gtat Corporation Technique for controlling temperature uniformity in crystal growth apparatus
KR20160123536A (ko) * 2015-04-16 2016-10-26 포토멕 주식회사 사파이어 잉곳 제조장치
CN107604436A (zh) * 2017-10-31 2018-01-19 江苏高照新能源发展有限公司 一种可移动式侧加热器的g7炉
FR3081173B1 (fr) * 2018-05-17 2020-05-29 Ecm Greentech Four de solidification dirigee de cristaux

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1111924A (ja) * 1997-06-23 1999-01-19 Sharp Corp 多結晶半導体インゴットの製造方法および装置
KR20030046718A (ko) * 2001-12-06 2003-06-18 주식회사 실트론 소구경 실리콘 잉곳 성장챔버
KR20070118945A (ko) * 2006-06-13 2007-12-18 김영조 다결정 실리콘 잉곳 제조장치
JP2008037686A (ja) * 2006-08-04 2008-02-21 Katsuyo Tawara 結晶製造装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1111924A (ja) * 1997-06-23 1999-01-19 Sharp Corp 多結晶半導体インゴットの製造方法および装置
KR20030046718A (ko) * 2001-12-06 2003-06-18 주식회사 실트론 소구경 실리콘 잉곳 성장챔버
KR20070118945A (ko) * 2006-06-13 2007-12-18 김영조 다결정 실리콘 잉곳 제조장치
JP2008037686A (ja) * 2006-08-04 2008-02-21 Katsuyo Tawara 結晶製造装置

Also Published As

Publication number Publication date
CN102131963A (zh) 2011-07-20
KR20100024675A (ko) 2010-03-08
CN102131963B (zh) 2013-06-26
WO2010024541A2 (ko) 2010-03-04

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