JP4580939B2 - 太陽電池用のシリコン供給原料 - Google Patents
太陽電池用のシリコン供給原料 Download PDFInfo
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- JP4580939B2 JP4580939B2 JP2006546879A JP2006546879A JP4580939B2 JP 4580939 B2 JP4580939 B2 JP 4580939B2 JP 2006546879 A JP2006546879 A JP 2006546879A JP 2006546879 A JP2006546879 A JP 2006546879A JP 4580939 B2 JP4580939 B2 JP 4580939B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 93
- 229910052710 silicon Inorganic materials 0.000 title claims description 93
- 239000010703 silicon Substances 0.000 title claims description 93
- 238000000034 method Methods 0.000 claims description 22
- 235000012431 wafers Nutrition 0.000 claims description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 21
- 229910052796 boron Inorganic materials 0.000 claims description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 239000011574 phosphorus Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 238000002386 leaching Methods 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 6
- 238000007667 floating Methods 0.000 claims description 6
- 239000002893 slag Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 3
- 239000000378 calcium silicate Substances 0.000 claims description 3
- 229910052918 calcium silicate Inorganic materials 0.000 claims description 3
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 3
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 2
- 238000004513 sizing Methods 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- JXBAVRIYDKLCOE-UHFFFAOYSA-N [C].[P] Chemical compound [C].[P] JXBAVRIYDKLCOE-UHFFFAOYSA-N 0.000 claims 1
- 238000010891 electric arc Methods 0.000 claims 1
- 239000000284 extract Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000007670 refining Methods 0.000 claims 1
- 229940095676 wafer product Drugs 0.000 claims 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000009991 scouring Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
a) 冶金品位のシリコンをケイ酸カルシウムスラグで処理してシリコンのホウ素含量を0.2〜10ppmaに低減する工程;
b) 工程a) からのスラグ処理したシリコンを凝固する工程;
c) 工程b) からのシリコンを酸浸出液による少なくとも1回の浸出工程で浸出して不純物を除去する工程;
d) 工程c) からのシリコンを、溶融する工程;
e) 工程d) からの溶融シリコンを、方向性凝固によりインゴットの形に凝固する工程;
f) 工程e) からの凝固したインゴットの上部を取出して0.2〜10ppmaのホウ素と0.1〜10ppmaのリンとを含有するシリコンインゴットを生成する工程;
g) 工程f) からのシリコンを破砕及び/又は分粒する工程
にかけることを特徴とする。
シリコン供給原料の製造
電弧炉中での炭熱還元により製造した工業用の冶金品位シリコンをケイ酸カルシウムスラグで処理して主にホウ素を除去する。ホウ素は溶融シリコンからスラグ相に抽出される。シリコンの大部分が凝固されるまで溶融物中に不純物を滞留させながらシリコンをきわめて純粋なシリコン結晶となるように凝固した。不純物は凝固したシリコン中の粒子境界上に至った。
実施例2
指向的に凝固したシリコンインゴット、ウェファ及び太陽電池の製造
実施例1に記載した方法により製造したシリコン供給原料を用いて本発明による2個の指向的に凝固したシリコンインゴットを製造した。工業用の多結晶質Si−ウェファを対照として用いた。シリコンインゴットを製造するのにクリスタロックス(Crystalox)DS250炉を用いた。25.5cmの内径と20cmの高さを有し且つ約12kgの供給原料を収容し得る円形の石英ルツボを用いた。成長したインゴットは100cm2と156cm2のブロックに方形とされ次いでのこぎりによりウェファに切取った。これらのブロックからは、300〜330μmの範囲の厚さを有する多数のウェファを電池加工用に製造した。
切断したてのウェファの本体抵抗率を、底部から頂部までの少なくとも各々5枚のウェファについて4点プローブにより全てのブロックに対して測定した。インゴットNo.1及びNo.2の本体抵抗率分布をそれぞれ図1及び図2に示す。図1及び図2は、該材料がp−型からn−型に変化する時抵抗率はインゴットの底部からインゴットの高さの約3/4まで実質的に一定であることを示す。
Claims (4)
- PV太陽電池用のシリコンウェファ生産用の指向的に凝固したチョクラルスキー法で得られる、浮動帯域法で得られる又は多結晶質のシリコンインゴット、薄板又はリボン状物を製造するためのシリコン供給原料において、該シリコン供給原料は該材料中に分布した0.3〜5.0ppmaのホウ素と0.5〜3.5ppmaのリンと50ppma未満の金属元素と100ppma未満の炭素とを含有することを特徴とするシリコン供給原料。
- 請求項1記載のシリコン供給原料から形成した太陽電池用のウェファ生成用の指向的に凝固したチョクラルスキー法による、浮動帯域法による又は多結晶質のシリコンインゴット又はシリコン薄板又はリボン状物において、該シリコンインゴット、薄板又はリボン状物はインゴットに分布した0.3〜5.0ppmaのホウ素、0.5〜3.5ppmaのリン、50ppma未満の金属元素及び100ppma未満の炭素を含有し、該シリコンインゴットはインゴット高さ又は薄板又はリボンの厚さの40〜99%の位置でp−型からn−型へ又はn−型からp−型への型式変化を有し且つ0.4〜10ohm cmの開始値を有する曲線によって示される抵抗率分布を有し、その際抵抗率値は型式変化点に向かって増大することを特徴とするシリコンインゴット又はシリコン薄板又はリボン状物。
- 抵抗率の開始値は0.7〜3 ohm cmであることを特徴とする請求項2記載のシリコンインゴット、薄板又はリボン状物。
- PV太陽電池用のシリコンウェファ生産用の指向的に凝固したチョクラルスキー法による、浮動帯域法による又は多結晶質のシリコンインゴット、シリコン薄板又はリボン状物を製造する請求項1記載のシリコン供給原料の製造方法において、炭素加熱還元炉による電弧炉で生じた冶金品位のシリコンであって300ppma以下のホウ素と100ppma以下のリンとを含有してなるシリコンを次の精練工程にかけ;即ち
a) 冶金品位のシリコンをケイ酸カルシウムスラグで処理してシリコンのホウ素含量を0.3〜5.0ppmaに低減する工程;
b) 工程a) からのスラグ処理したシリコンを凝固する工程;
c) 不純物を除去するのに酸浸出液により少なくとも1回の浸出工程で工程b) からのシリコンを浸出する工程;
d) 工程c) からのシリコンを溶融する工程;
e) 工程d) からの溶融シリコンを、指向的な凝固によりインゴットの形に凝固する工程;
f) 工程e) からの凝固したインゴットの上方部分を取出して0.3〜5.0ppmaのホウ素と0.5〜3.5ppmaのリンと50ppma未満の金属元素及び100ppma未満の炭素とを含有するシリコンインゴットを生成する工程;
g) 工程f) からのシリコンを破砕及び/又は分粒する工程;
にかけることを特徴とする請求項1記載のシリコン供給原料の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20035830A NO333319B1 (no) | 2003-12-29 | 2003-12-29 | Silisiummateriale for fremstilling av solceller |
PCT/NO2004/000003 WO2005063621A1 (en) | 2003-12-29 | 2004-01-12 | Silicon feedstock for solar cells |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007516928A JP2007516928A (ja) | 2007-06-28 |
JP4580939B2 true JP4580939B2 (ja) | 2010-11-17 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006546879A Expired - Fee Related JP4580939B2 (ja) | 2003-12-29 | 2004-01-12 | 太陽電池用のシリコン供給原料 |
Country Status (11)
Country | Link |
---|---|
US (2) | US7381392B2 (ja) |
EP (2) | EP2607308A1 (ja) |
JP (1) | JP4580939B2 (ja) |
CN (1) | CN100457613C (ja) |
AU (1) | AU2004308879B2 (ja) |
BR (1) | BRPI0417807B1 (ja) |
CA (1) | CA2548936C (ja) |
EA (1) | EA009791B1 (ja) |
ES (1) | ES2441725T3 (ja) |
NO (1) | NO333319B1 (ja) |
WO (1) | WO2005063621A1 (ja) |
Families Citing this family (31)
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NO322246B1 (no) * | 2004-12-27 | 2006-09-04 | Elkem Solar As | Fremgangsmate for fremstilling av rettet storknede silisiumingots |
DE102005061690A1 (de) * | 2005-12-21 | 2007-07-05 | Solmic Gmbh | Verfahren zur Herstellung solartauglichen Siliziums |
KR101061530B1 (ko) * | 2006-04-04 | 2011-09-01 | 6엔 실리콘 아이엔씨. | 실리콘의 정제 방법 |
US7682585B2 (en) | 2006-04-25 | 2010-03-23 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Silicon refining process |
BRPI0716934A2 (pt) * | 2006-09-14 | 2013-09-17 | Silicium Becancour Inc | processo e aparelho para a purificaÇço de material de sÍlica de baixa qualidade |
NO333757B1 (no) * | 2006-12-04 | 2013-09-09 | Elkem Solar As | Solceller |
US8968467B2 (en) * | 2007-06-27 | 2015-03-03 | Silicor Materials Inc. | Method and system for controlling resistivity in ingots made of compensated feedstock silicon |
US7651566B2 (en) * | 2007-06-27 | 2010-01-26 | Fritz Kirscht | Method and system for controlling resistivity in ingots made of compensated feedstock silicon |
UA97691C2 (ru) | 2007-09-13 | 2012-03-12 | Силисиум Беканкур Инк. | Способ получения твердого поликристаллического кремния высокой чистоты |
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US7887633B2 (en) * | 2008-06-16 | 2011-02-15 | Calisolar, Inc. | Germanium-enriched silicon material for making solar cells |
CN101676203B (zh) | 2008-09-16 | 2015-06-10 | 储晞 | 生产高纯颗粒硅的方法 |
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US20100213643A1 (en) * | 2009-02-26 | 2010-08-26 | Gadgil Prasad N | Rapid synthesis of polycrystalline silicon sheets for photo-voltaic solar cell manufacturing |
WO2010126639A1 (en) * | 2009-04-29 | 2010-11-04 | Calisolar, Inc. | Process control for umg-si material purification |
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US8562932B2 (en) | 2009-08-21 | 2013-10-22 | Silicor Materials Inc. | Method of purifying silicon utilizing cascading process |
KR101180353B1 (ko) * | 2010-07-01 | 2012-09-06 | 연세대학교 산학협력단 | 태양전지용 실리콘제조를 위한 acid leaching을 이용한 MG-Si중 불순물의 정련방법 |
CN102021650B (zh) * | 2010-12-31 | 2012-06-06 | 常州天合光能有限公司 | 一种大型多晶锭的生产方法 |
CN102191562B (zh) * | 2011-04-25 | 2012-08-29 | 苏州阿特斯阳光电力科技有限公司 | 一种n型晶体硅太阳电池的硼扩散方法 |
FR2978549B1 (fr) * | 2011-07-27 | 2014-03-28 | Commissariat Energie Atomique | Determination des teneurs en dopants dans un echantillon de silicium compense |
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CN103014839B (zh) * | 2013-01-09 | 2016-07-27 | 英利集团有限公司 | 一种p型掺杂剂及其制备方法 |
CN103147118B (zh) * | 2013-02-25 | 2016-03-30 | 天津市环欧半导体材料技术有限公司 | 一种利用直拉区熔法制备太阳能级硅单晶的方法 |
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JPS5913444B2 (ja) * | 1977-11-21 | 1984-03-29 | ユニオン・カ−バイド・コ−ポレ−シヨン | 精製された金属シリコン製造方法 |
US4247528A (en) * | 1979-04-11 | 1981-01-27 | Dow Corning Corporation | Method for producing solar-cell-grade silicon |
DE2933164A1 (de) * | 1979-08-16 | 1981-02-26 | Consortium Elektrochem Ind | Verfahren zum reinigen von rohsilicium |
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JPH07206420A (ja) * | 1994-01-10 | 1995-08-08 | Showa Alum Corp | 高純度ケイ素の製造方法 |
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JPH10251010A (ja) * | 1997-03-14 | 1998-09-22 | Kawasaki Steel Corp | 太陽電池用シリコン |
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NO317073B1 (no) * | 2001-06-05 | 2004-08-02 | Sintef | Elektrolytt samt fremgangsmate ved fremstilling eller raffinering av silisium |
FR2827592B1 (fr) * | 2001-07-23 | 2003-08-22 | Invensil | Silicium metallurgique de haute purete et procede d'elaboration |
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CA2548936A1 (en) | 2005-07-14 |
CN1902129A (zh) | 2007-01-24 |
US7381392B2 (en) | 2008-06-03 |
NO333319B1 (no) | 2013-05-06 |
US7931883B2 (en) | 2011-04-26 |
EP2607308A1 (en) | 2013-06-26 |
BRPI0417807B1 (pt) | 2014-09-23 |
BRPI0417807A (pt) | 2007-04-10 |
EP1699737B1 (en) | 2014-01-01 |
CN100457613C (zh) | 2009-02-04 |
AU2004308879A1 (en) | 2005-07-14 |
AU2004308879B2 (en) | 2008-01-03 |
US20070128099A1 (en) | 2007-06-07 |
ES2441725T3 (es) | 2014-02-06 |
US20080206123A1 (en) | 2008-08-28 |
JP2007516928A (ja) | 2007-06-28 |
CA2548936C (en) | 2009-08-18 |
WO2005063621A1 (en) | 2005-07-14 |
EP1699737A1 (en) | 2006-09-13 |
EA200601259A1 (ru) | 2007-02-27 |
EA009791B1 (ru) | 2008-04-28 |
NO20035830L (no) | 2005-06-30 |
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