NO333319B1 - Silisiummateriale for fremstilling av solceller - Google Patents
Silisiummateriale for fremstilling av solceller Download PDFInfo
- Publication number
- NO333319B1 NO333319B1 NO20035830A NO20035830A NO333319B1 NO 333319 B1 NO333319 B1 NO 333319B1 NO 20035830 A NO20035830 A NO 20035830A NO 20035830 A NO20035830 A NO 20035830A NO 333319 B1 NO333319 B1 NO 333319B1
- Authority
- NO
- Norway
- Prior art keywords
- silicon
- production
- ppma
- ingot
- solar cells
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 239000002210 silicon-based material Substances 0.000 title claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 81
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 81
- 239000010703 silicon Substances 0.000 claims abstract description 81
- 235000012431 wafers Nutrition 0.000 claims abstract description 27
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052796 boron Inorganic materials 0.000 claims abstract description 24
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 20
- 239000011574 phosphorus Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 230000008569 process Effects 0.000 claims abstract description 5
- 239000002893 slag Substances 0.000 claims description 6
- 238000007711 solidification Methods 0.000 claims description 6
- 230000008023 solidification Effects 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 4
- 238000007670 refining Methods 0.000 claims description 4
- 239000000378 calcium silicate Substances 0.000 claims description 3
- 229960003340 calcium silicate Drugs 0.000 claims description 3
- 229910052918 calcium silicate Inorganic materials 0.000 claims description 3
- 235000012241 calcium silicate Nutrition 0.000 claims description 3
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 claims description 3
- 238000010891 electric arc Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 3
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000002386 leaching Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20035830A NO333319B1 (no) | 2003-12-29 | 2003-12-29 | Silisiummateriale for fremstilling av solceller |
| EP04701439.4A EP1699737B1 (en) | 2003-12-29 | 2004-01-12 | Method for making silicon feedstock for solar cells |
| EA200601259A EA009791B1 (ru) | 2003-12-29 | 2004-01-12 | Кремниевое исходное сырьё для солнечных элементов |
| BRPI0417807-6A BRPI0417807B1 (pt) | 2003-12-29 | 2004-01-12 | Método para a produção de material de alimentação de silício para produzir lingotes de silício multicristalinos ou zona flutuante, solidificados direcionalmente por Czochralski, material de alimentação de silício,e, lingote de silício, ou lâmina ou fita de silício para produzir pastilhas para células solares |
| CNB2004800394173A CN100457613C (zh) | 2003-12-29 | 2004-01-12 | 太阳能电池的硅原料 |
| CA002548936A CA2548936C (en) | 2003-12-29 | 2004-01-12 | Silicon feedstock for solar cells |
| ES04701439.4T ES2441725T3 (es) | 2003-12-29 | 2004-01-12 | Método para obtener materia prima de silicio para células solares |
| US10/585,004 US7381392B2 (en) | 2003-12-29 | 2004-01-12 | Silicon feedstock for solar cells |
| PCT/NO2004/000003 WO2005063621A1 (en) | 2003-12-29 | 2004-01-12 | Silicon feedstock for solar cells |
| AU2004308879A AU2004308879B2 (en) | 2003-12-29 | 2004-01-12 | Silicon feedstock for solar cells |
| EP13159702.3A EP2607308A1 (en) | 2003-12-29 | 2004-01-12 | Silicon feedstock for solar cells |
| JP2006546879A JP4580939B2 (ja) | 2003-12-29 | 2004-01-12 | 太陽電池用のシリコン供給原料 |
| US12/108,254 US7931883B2 (en) | 2003-12-29 | 2008-04-23 | Silicon feedstock for solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20035830A NO333319B1 (no) | 2003-12-29 | 2003-12-29 | Silisiummateriale for fremstilling av solceller |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO20035830L NO20035830L (no) | 2005-06-30 |
| NO333319B1 true NO333319B1 (no) | 2013-05-06 |
Family
ID=34738092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20035830A NO333319B1 (no) | 2003-12-29 | 2003-12-29 | Silisiummateriale for fremstilling av solceller |
Country Status (11)
| Country | Link |
|---|---|
| US (2) | US7381392B2 (ja) |
| EP (2) | EP2607308A1 (ja) |
| JP (1) | JP4580939B2 (ja) |
| CN (1) | CN100457613C (ja) |
| AU (1) | AU2004308879B2 (ja) |
| BR (1) | BRPI0417807B1 (ja) |
| CA (1) | CA2548936C (ja) |
| EA (1) | EA009791B1 (ja) |
| ES (1) | ES2441725T3 (ja) |
| NO (1) | NO333319B1 (ja) |
| WO (1) | WO2005063621A1 (ja) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NO322246B1 (no) * | 2004-12-27 | 2006-09-04 | Elkem Solar As | Fremgangsmate for fremstilling av rettet storknede silisiumingots |
| DE102005061690A1 (de) * | 2005-12-21 | 2007-07-05 | Solmic Gmbh | Verfahren zur Herstellung solartauglichen Siliziums |
| EP2024285B1 (en) * | 2006-04-04 | 2014-06-11 | Silicor Materials Inc. | Method for purifying silicon |
| US7682585B2 (en) * | 2006-04-25 | 2010-03-23 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Silicon refining process |
| AU2007295860A1 (en) * | 2006-09-14 | 2008-03-20 | Silicium Becancour Inc. | Process and apparatus for purifying low-grade silicon material |
| NO333757B1 (no) * | 2006-12-04 | 2013-09-09 | Elkem Solar As | Solceller |
| US7651566B2 (en) * | 2007-06-27 | 2010-01-26 | Fritz Kirscht | Method and system for controlling resistivity in ingots made of compensated feedstock silicon |
| US8968467B2 (en) * | 2007-06-27 | 2015-03-03 | Silicor Materials Inc. | Method and system for controlling resistivity in ingots made of compensated feedstock silicon |
| UA97691C2 (ru) | 2007-09-13 | 2012-03-12 | Силисиум Беканкур Инк. | Способ получения твердого поликристаллического кремния высокой чистоты |
| KR101247666B1 (ko) | 2007-10-03 | 2013-04-01 | 실리코르 머티리얼즈 인코포레이티드 | 실리콘 결정을 얻기 위한 실리콘 분말의 가공 방법 |
| WO2009062117A1 (en) * | 2007-11-09 | 2009-05-14 | Sunpreme, Inc. | Low-cost solar cells and methods for their production |
| US8758507B2 (en) * | 2008-06-16 | 2014-06-24 | Silicor Materials Inc. | Germanium enriched silicon material for making solar cells |
| US7887633B2 (en) * | 2008-06-16 | 2011-02-15 | Calisolar, Inc. | Germanium-enriched silicon material for making solar cells |
| ITMI20081085A1 (it) * | 2008-06-16 | 2009-12-17 | N E D Silicon S P A | Metodo per la preparazione di silicio di grado metallurgico di elevata purezza. |
| CN101676203B (zh) | 2008-09-16 | 2015-06-10 | 储晞 | 生产高纯颗粒硅的方法 |
| DE102009008371A1 (de) | 2009-02-11 | 2010-08-12 | Schott Solar Ag | Integraler Prozeß von Waferherstellung bis Modulfertigung zur Herstellung von Wafern, Solarzellen und Solarmodulen |
| US20100213643A1 (en) * | 2009-02-26 | 2010-08-26 | Gadgil Prasad N | Rapid synthesis of polycrystalline silicon sheets for photo-voltaic solar cell manufacturing |
| KR20120014011A (ko) * | 2009-04-29 | 2012-02-15 | 칼리솔라, 인코포레이티드 | 고순도화한 금속급 실리콘 재료 정제를 위한 공정 제어 |
| WO2010127184A1 (en) * | 2009-04-29 | 2010-11-04 | Calisolar, Inc. | Quality control process for umg-si feedstock |
| US8547121B2 (en) * | 2009-04-29 | 2013-10-01 | Silicor Materials Inc. | Quality control process for UMG-SI feedstock |
| US8562932B2 (en) | 2009-08-21 | 2013-10-22 | Silicor Materials Inc. | Method of purifying silicon utilizing cascading process |
| KR101180353B1 (ko) * | 2010-07-01 | 2012-09-06 | 연세대학교 산학협력단 | 태양전지용 실리콘제조를 위한 ａｃｉｄ ｌｅａｃｈｉｎｇ을 이용한 ＭＧ-Ｓｉ중 불순물의 정련방법 |
| CN102021650B (zh) * | 2010-12-31 | 2012-06-06 | 常州天合光能有限公司 | 一种大型多晶锭的生产方法 |
| CN102191562B (zh) * | 2011-04-25 | 2012-08-29 | 苏州阿特斯阳光电力科技有限公司 | 一种n型晶体硅太阳电池的硼扩散方法 |
| FR2978549B1 (fr) * | 2011-07-27 | 2014-03-28 | Commissariat Energie Atomique | Determination des teneurs en dopants dans un echantillon de silicium compense |
| NO335110B1 (no) * | 2011-10-06 | 2014-09-15 | Elkem Solar As | Fremgangsmåte for fremstilling av silisiummonokrystall og multikrystalline silisiumingoter |
| CN103014839B (zh) * | 2013-01-09 | 2016-07-27 | 英利集团有限公司 | 一种p型掺杂剂及其制备方法 |
| CN103147118B (zh) * | 2013-02-25 | 2016-03-30 | 天津市环欧半导体材料技术有限公司 | 一种利用直拉区熔法制备太阳能级硅单晶的方法 |
| NO339608B1 (no) | 2013-09-09 | 2017-01-09 | Elkem Solar As | Multikrystallinske silisiumingoter, silisiummasterlegering, fremgangsmåte for å øke utbyttet av multikrystallinske silisiumingoter for solceller |
| NO336720B1 (no) * | 2013-09-09 | 2015-10-26 | Elkem Solar As | Fremgangsmåte for forbedring av effektiviteten av solceller. |
| FR3010721B1 (fr) * | 2013-09-17 | 2017-02-24 | Commissariat Energie Atomique | Procede de fabrication d'un lingot de silicium presentant une concentration homogene en phosphore |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4247528A (en) * | 1979-04-11 | 1981-01-27 | Dow Corning Corporation | Method for producing solar-cell-grade silicon |
| US4304763A (en) * | 1979-08-16 | 1981-12-08 | Consortium Fur Elektrochemische Industrie Gmbh | Process for purifying metallurgical-grade silicon |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4195067A (en) * | 1977-11-21 | 1980-03-25 | Union Carbide Corporation | Process for the production of refined metallurgical silicon |
| JPS5913444B2 (ja) * | 1977-11-21 | 1984-03-29 | ユニオン・カ−バイド・コ−ポレ−シヨン | 精製された金属シリコン製造方法 |
| US4612179A (en) * | 1985-03-13 | 1986-09-16 | Sri International | Process for purification of solid silicon |
| JPH07206420A (ja) * | 1994-01-10 | 1995-08-08 | Showa Alum Corp | 高純度ケイ素の製造方法 |
| NO180532C (no) * | 1994-09-01 | 1997-05-07 | Elkem Materials | Fremgangsmåte for fjerning av forurensninger fra smeltet silisium |
| CN1083396C (zh) * | 1995-07-14 | 2002-04-24 | 昭和电工株式会社 | 高纯度硅的制造方法 |
| US5961944A (en) * | 1996-10-14 | 1999-10-05 | Kawasaki Steel Corporation | Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell |
| JPH10251010A (ja) * | 1997-03-14 | 1998-09-22 | Kawasaki Steel Corp | 太陽電池用シリコン |
| US5972107A (en) * | 1997-08-28 | 1999-10-26 | Crystal Systems, Inc. | Method for purifying silicon |
| CN1207192C (zh) * | 1997-12-25 | 2005-06-22 | 新日本制铁株式会社 | 高纯硅的制造方法及装置 |
| US6468886B2 (en) * | 1999-06-15 | 2002-10-22 | Midwest Research Institute | Purification and deposition of silicon by an iodide disproportionation reaction |
| JP3446032B2 (ja) * | 2000-02-25 | 2003-09-16 | 信州大学長 | 無転位シリコン単結晶の製造方法 |
| AU2001285142A1 (en) * | 2000-08-21 | 2002-03-04 | Astropower Inc. | Method and apparatus for purifying silicon |
| NO317073B1 (no) * | 2001-06-05 | 2004-08-02 | Sintef | Elektrolytt samt fremgangsmate ved fremstilling eller raffinering av silisium |
| FR2827592B1 (fr) * | 2001-07-23 | 2003-08-22 | Invensil | Silicium metallurgique de haute purete et procede d'elaboration |
| US8021483B2 (en) * | 2002-02-20 | 2011-09-20 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
| JP4142332B2 (ja) * | 2002-04-19 | 2008-09-03 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 単結晶シリコンの製造方法、単結晶シリコンウェーハの製造方法、単結晶シリコン製造用種結晶、単結晶シリコンインゴットおよび単結晶シリコンウェーハ |
-
2003
- 2003-12-29 NO NO20035830A patent/NO333319B1/no not_active IP Right Cessation
-
2004
- 2004-01-12 CA CA002548936A patent/CA2548936C/en not_active Expired - Lifetime
- 2004-01-12 AU AU2004308879A patent/AU2004308879B2/en not_active Expired
- 2004-01-12 BR BRPI0417807-6A patent/BRPI0417807B1/pt active IP Right Grant
- 2004-01-12 CN CNB2004800394173A patent/CN100457613C/zh not_active Expired - Lifetime
- 2004-01-12 ES ES04701439.4T patent/ES2441725T3/es not_active Expired - Lifetime
- 2004-01-12 EP EP13159702.3A patent/EP2607308A1/en not_active Withdrawn
- 2004-01-12 JP JP2006546879A patent/JP4580939B2/ja not_active Expired - Fee Related
- 2004-01-12 WO PCT/NO2004/000003 patent/WO2005063621A1/en active Application Filing
- 2004-01-12 US US10/585,004 patent/US7381392B2/en not_active Expired - Lifetime
- 2004-01-12 EA EA200601259A patent/EA009791B1/ru not_active IP Right Cessation
- 2004-01-12 EP EP04701439.4A patent/EP1699737B1/en not_active Expired - Lifetime
-
2008
- 2008-04-23 US US12/108,254 patent/US7931883B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4247528A (en) * | 1979-04-11 | 1981-01-27 | Dow Corning Corporation | Method for producing solar-cell-grade silicon |
| US4304763A (en) * | 1979-08-16 | 1981-12-08 | Consortium Fur Elektrochemische Industrie Gmbh | Process for purifying metallurgical-grade silicon |
Non-Patent Citations (6)
| Title |
|---|
| "Improved High-Purity Arc-Furnace Silicon For Solar Cells", Journal of The Electrochemical Society, Vol. 132 (2), februar 1985, pp. 339-345., Proprietor: Amick J. A. et al, Dated: 01.01.0001 * |
| NREL Conference Paper, The NCPV Program Review Meeting, Lakewood, Colorado, 14.-17. oktober 2001, Proprietor: Ciszek T. F. et al., Dated: 01.01.0001 * |
| Ny granskingsrapport/ New search report: * |
| -Ny granskingsrapport/ New search report: * |
| World Conference and Exhibition on Photovoltaic Solar Energy Conversion, 6.-10. juli 1998, Wien Østerrike, Proprietor: Tsou Y. S. et al., Dated: 01.01.0001 * |
| World Conference and Exhibition on Photovoltaic Solar Energy Conversion, 6.-10. juli 1998, Wien Østerrike, Proprietor: von Keitz A. et al., Dated: 01.01.0001 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005063621A1 (en) | 2005-07-14 |
| US7931883B2 (en) | 2011-04-26 |
| AU2004308879B2 (en) | 2008-01-03 |
| EP1699737A1 (en) | 2006-09-13 |
| BRPI0417807B1 (pt) | 2014-09-23 |
| ES2441725T3 (es) | 2014-02-06 |
| JP4580939B2 (ja) | 2010-11-17 |
| BRPI0417807A (pt) | 2007-04-10 |
| AU2004308879A1 (en) | 2005-07-14 |
| EP1699737B1 (en) | 2014-01-01 |
| EP2607308A1 (en) | 2013-06-26 |
| US20080206123A1 (en) | 2008-08-28 |
| CN100457613C (zh) | 2009-02-04 |
| US20070128099A1 (en) | 2007-06-07 |
| NO20035830L (no) | 2005-06-30 |
| EA009791B1 (ru) | 2008-04-28 |
| CA2548936A1 (en) | 2005-07-14 |
| JP2007516928A (ja) | 2007-06-28 |
| EA200601259A1 (ru) | 2007-02-27 |
| CN1902129A (zh) | 2007-01-24 |
| US7381392B2 (en) | 2008-06-03 |
| CA2548936C (en) | 2009-08-18 |
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