FR2978549B1 - Determination des teneurs en dopants dans un echantillon de silicium compense - Google Patents
Determination des teneurs en dopants dans un echantillon de silicium compenseInfo
- Publication number
- FR2978549B1 FR2978549B1 FR1102355A FR1102355A FR2978549B1 FR 2978549 B1 FR2978549 B1 FR 2978549B1 FR 1102355 A FR1102355 A FR 1102355A FR 1102355 A FR1102355 A FR 1102355A FR 2978549 B1 FR2978549 B1 FR 2978549B1
- Authority
- FR
- France
- Prior art keywords
- determination
- doping content
- compensation sample
- silicon
- silicon compensation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/20—Investigating the presence of flaws
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Biochemistry (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Silicon Compounds (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1102355A FR2978549B1 (fr) | 2011-07-27 | 2011-07-27 | Determination des teneurs en dopants dans un echantillon de silicium compense |
EP12748737.9A EP2737304A1 (fr) | 2011-07-27 | 2012-07-20 | Détermination des teneurs en dopants dans un échantillon de silicium compensé |
CN201280046820.3A CN103842806A (zh) | 2011-07-27 | 2012-07-20 | 确定补偿硅样品的掺杂剂含量 |
BR112014001722A BR112014001722A2 (pt) | 2011-07-27 | 2012-07-20 | determinação dos teores em dopantes em amostra de silício compensado |
KR1020147005159A KR20140058582A (ko) | 2011-07-27 | 2012-07-20 | 보상된 실리콘 샘플의 도펀트 내용 결정 |
US14/235,327 US20140167731A1 (en) | 2011-07-27 | 2012-07-20 | Determining the dopant content of a compensated silicon sample |
PCT/FR2012/000298 WO2013014341A1 (fr) | 2011-07-27 | 2012-07-20 | Détermination des teneurs en dopants dans un échantillon de silicium compensé |
JP2014522126A JP2014531380A (ja) | 2011-07-27 | 2012-07-20 | 補償シリコンサンプルのドーパント含有量の特定 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1102355A FR2978549B1 (fr) | 2011-07-27 | 2011-07-27 | Determination des teneurs en dopants dans un echantillon de silicium compense |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2978549A1 FR2978549A1 (fr) | 2013-02-01 |
FR2978549B1 true FR2978549B1 (fr) | 2014-03-28 |
Family
ID=46717884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1102355A Expired - Fee Related FR2978549B1 (fr) | 2011-07-27 | 2011-07-27 | Determination des teneurs en dopants dans un echantillon de silicium compense |
Country Status (8)
Country | Link |
---|---|
US (1) | US20140167731A1 (fr) |
EP (1) | EP2737304A1 (fr) |
JP (1) | JP2014531380A (fr) |
KR (1) | KR20140058582A (fr) |
CN (1) | CN103842806A (fr) |
BR (1) | BR112014001722A2 (fr) |
FR (1) | FR2978549B1 (fr) |
WO (1) | WO2013014341A1 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3005740B1 (fr) * | 2013-05-14 | 2015-06-12 | Commissariat Energie Atomique | Determination des concentrations en dopants accepteurs et donneurs |
CN106126901B (zh) * | 2016-06-17 | 2019-03-26 | 华南理工大学 | 一种多维度信息融合的变压器可用状态在线评估方法 |
US10954606B2 (en) | 2018-06-27 | 2021-03-23 | Globalwafers Co., Ltd. | Methods for modeling the impurity concentration of a single crystal silicon ingot |
US11047066B2 (en) * | 2018-06-27 | 2021-06-29 | Globalwafers Co., Ltd. | Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots |
US11585010B2 (en) | 2019-06-28 | 2023-02-21 | Globalwafers Co., Ltd. | Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant |
US11795569B2 (en) | 2020-12-31 | 2023-10-24 | Globalwafers Co., Ltd. | Systems for producing a single crystal silicon ingot using a vaporized dopant |
US11866844B2 (en) | 2020-12-31 | 2024-01-09 | Globalwafers Co., Ltd. | Methods for producing a single crystal silicon ingot using a vaporized dopant |
JP2023093983A (ja) * | 2021-12-23 | 2023-07-05 | グローバルウェーハズ・ジャパン株式会社 | 高抵抗シリコンウェーハの厚さ測定方法及び平坦度測定方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1170152C (zh) * | 2002-09-10 | 2004-10-06 | 西安电子科技大学 | 应变硅锗薄膜材料掺杂浓度测试方法 |
NO333319B1 (no) * | 2003-12-29 | 2013-05-06 | Elkem As | Silisiummateriale for fremstilling av solceller |
JP4442446B2 (ja) * | 2005-01-27 | 2010-03-31 | 信越半導体株式会社 | 選択エッチング方法 |
US20090039478A1 (en) * | 2007-03-10 | 2009-02-12 | Bucher Charles E | Method For Utilizing Heavily Doped Silicon Feedstock To Produce Substrates For Photovoltaic Applications By Dopant Compensation During Crystal Growth |
CN101446563A (zh) * | 2007-11-26 | 2009-06-03 | 北京有色金属研究总院 | 一种鉴别和测量半导体材料中掺杂元素的方法 |
CN102007394B (zh) * | 2008-04-25 | 2013-06-26 | S.O.I.Tec绝缘体上硅技术公司 | 特别用于应变或应力硅材料的刻蚀组合物、表征这种材料表面上的缺陷的方法,和用刻蚀组合物处理这种表面的工艺 |
CA2673621A1 (fr) | 2009-07-21 | 2009-12-11 | Silicium Becancour Inc. | Methode d'evaluation de compenseation du silicium a mise a niveau de qualite metallurgique (umg) |
EP2567217B1 (fr) * | 2010-05-03 | 2019-07-03 | Aurora Solar Technologies (Canada) Inc. | Mesure sans contact de la teneur en dopant de couches semi-conductrices |
-
2011
- 2011-07-27 FR FR1102355A patent/FR2978549B1/fr not_active Expired - Fee Related
-
2012
- 2012-07-20 WO PCT/FR2012/000298 patent/WO2013014341A1/fr active Application Filing
- 2012-07-20 JP JP2014522126A patent/JP2014531380A/ja not_active Withdrawn
- 2012-07-20 US US14/235,327 patent/US20140167731A1/en not_active Abandoned
- 2012-07-20 KR KR1020147005159A patent/KR20140058582A/ko not_active Application Discontinuation
- 2012-07-20 EP EP12748737.9A patent/EP2737304A1/fr not_active Withdrawn
- 2012-07-20 CN CN201280046820.3A patent/CN103842806A/zh active Pending
- 2012-07-20 BR BR112014001722A patent/BR112014001722A2/pt not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20140058582A (ko) | 2014-05-14 |
CN103842806A (zh) | 2014-06-04 |
WO2013014341A1 (fr) | 2013-01-31 |
JP2014531380A (ja) | 2014-11-27 |
BR112014001722A2 (pt) | 2017-03-21 |
US20140167731A1 (en) | 2014-06-19 |
EP2737304A1 (fr) | 2014-06-04 |
FR2978549A1 (fr) | 2013-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20160331 |