DE112011101442B4 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE112011101442B4
DE112011101442B4 DE112011101442.2T DE112011101442T DE112011101442B4 DE 112011101442 B4 DE112011101442 B4 DE 112011101442B4 DE 112011101442 T DE112011101442 T DE 112011101442T DE 112011101442 B4 DE112011101442 B4 DE 112011101442B4
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Germany
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well regions
region
semiconductor device
well
conductivity type
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DE112011101442.2T
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German (de)
English (en)
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DE112011101442T5 (de
Inventor
Shuhei Nakata
Naruhisa Miura
Hiroshi Watanabe
Kenichi Ohtsuka
Shoyu Watanabe
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/664—Inverted VDMOS transistors, i.e. source-down VDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
DE112011101442.2T 2010-04-26 2011-04-07 Halbleitervorrichtung Active DE112011101442B4 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2010100553 2010-04-26
JP2010-100553 2010-04-26
JP2010-195358 2010-09-01
JP2010195358 2010-09-01
PCT/JP2011/058805 WO2011135995A1 (ja) 2010-04-26 2011-04-07 半導体装置

Publications (2)

Publication Number Publication Date
DE112011101442T5 DE112011101442T5 (de) 2013-04-25
DE112011101442B4 true DE112011101442B4 (de) 2022-05-12

Family

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Family Applications (1)

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DE112011101442.2T Active DE112011101442B4 (de) 2010-04-26 2011-04-07 Halbleitervorrichtung

Country Status (6)

Country Link
US (2) US8860039B2 (enExample)
JP (2) JP5619152B2 (enExample)
KR (1) KR101464846B1 (enExample)
CN (1) CN102859696B (enExample)
DE (1) DE112011101442B4 (enExample)
WO (1) WO2011135995A1 (enExample)

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US9105715B2 (en) 2009-04-30 2015-08-11 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing the same
JP5769818B2 (ja) * 2011-12-01 2015-08-26 三菱電機株式会社 半導体装置
JP2014038963A (ja) * 2012-08-17 2014-02-27 Rohm Co Ltd 半導体装置
JP2015053462A (ja) * 2013-08-06 2015-03-19 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
US9991376B2 (en) 2013-09-20 2018-06-05 Monolith Semiconductor Inc. High voltage MOSFET devices and methods of making the devices
US9214572B2 (en) * 2013-09-20 2015-12-15 Monolith Semiconductor Inc. High voltage MOSFET devices and methods of making the devices
JP6119564B2 (ja) * 2013-11-08 2017-04-26 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6183200B2 (ja) * 2013-12-16 2017-08-23 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
WO2015193965A1 (ja) * 2014-06-17 2015-12-23 株式会社日立製作所 半導体装置、パワーモジュール、電力変換装置、鉄道車両、および半導体装置の製造方法
JP6523621B2 (ja) * 2014-06-19 2019-06-05 富士電機株式会社 半導体装置および半導体装置の製造方法
US9293533B2 (en) * 2014-06-20 2016-03-22 Infineon Technologies Austria Ag Semiconductor switching devices with different local transconductance
DE112014006762B4 (de) * 2014-06-27 2021-09-30 Mitsubishi Electric Corporation Siliciumcarbid-Halbleiteranordnung
JP2016058530A (ja) * 2014-09-09 2016-04-21 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2016058661A (ja) * 2014-09-11 2016-04-21 国立研究開発法人産業技術総合研究所 半導体装置
JP5940235B1 (ja) * 2014-10-01 2016-06-29 三菱電機株式会社 半導体装置
CN106158650A (zh) * 2015-04-16 2016-11-23 中芯国际集成电路制造(上海)有限公司 晶体管及其形成方法
CN108140674B (zh) * 2015-10-16 2021-02-19 三菱电机株式会社 半导体装置
JP1555473S (enExample) * 2015-10-26 2016-08-08
JP1555474S (enExample) * 2015-10-26 2016-08-08
WO2017099122A1 (ja) 2015-12-11 2017-06-15 ローム株式会社 半導体装置
US10056457B2 (en) * 2016-05-23 2018-08-21 General Electric Company Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using channel region extensions
JP7018394B2 (ja) * 2016-08-19 2022-02-10 ローム株式会社 半導体装置
CN109564942B (zh) * 2016-08-25 2022-02-11 三菱电机株式会社 半导体装置
JP6844228B2 (ja) * 2016-12-02 2021-03-17 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6725055B2 (ja) * 2017-02-14 2020-07-15 日産自動車株式会社 半導体装置および半導体装置の製造方法
JP6715210B2 (ja) * 2017-04-19 2020-07-01 株式会社豊田中央研究所 窒化物半導体装置の製造方法
JP7026314B2 (ja) * 2018-02-07 2022-02-28 パナソニックＩｐマネジメント株式会社 炭化珪素半導体装置
US11075295B2 (en) * 2018-07-13 2021-07-27 Cree, Inc. Wide bandgap semiconductor device
JP2020072214A (ja) * 2018-11-01 2020-05-07 富士電機株式会社 窒化ガリウム系半導体装置
JP7070393B2 (ja) * 2018-12-25 2022-05-18 株式会社デンソー 半導体装置
JP6973422B2 (ja) * 2019-01-21 2021-11-24 株式会社デンソー 半導体装置の製造方法
CN111192924B (zh) * 2019-12-31 2025-08-12 北京燕东微电子科技有限公司 半导体器件及其制造方法
CN111063740B (zh) * 2019-12-31 2025-03-28 北京燕东微电子科技有限公司 半导体器件及其制造方法
CN111146291B (zh) * 2019-12-31 2025-09-02 北京燕东微电子科技有限公司 半导体器件及其制造方法
JP6947338B1 (ja) * 2020-02-13 2021-10-13 三菱電機株式会社 炭化珪素半導体装置および電力変換装置の製造方法
JP7381424B2 (ja) * 2020-09-10 2023-11-15 株式会社東芝 半導体装置
CN113644124B (zh) * 2021-08-20 2024-03-22 深圳市伟安特电子有限公司 新型的低噪声低损耗igbt
TWI819771B (zh) * 2022-09-01 2023-10-21 鴻揚半導體股份有限公司 半導體裝置

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JP2005333068A (ja) 2004-05-21 2005-12-02 Toshiba Corp 半導体装置
US20070228462A1 (en) 2006-04-03 2007-10-04 Kabushiki Kaisha Toshiba Power semiconductor device

Also Published As

Publication number Publication date
WO2011135995A1 (ja) 2011-11-03
US20130020586A1 (en) 2013-01-24
KR20120131221A (ko) 2012-12-04
JP5931149B2 (ja) 2016-06-08
CN102859696B (zh) 2015-07-22
JP5619152B2 (ja) 2014-11-05
JP2014225713A (ja) 2014-12-04
US20140353686A1 (en) 2014-12-04
KR101464846B1 (ko) 2014-11-25
DE112011101442T5 (de) 2013-04-25
CN102859696A (zh) 2013-01-02
JPWO2011135995A1 (ja) 2013-07-18
US10062758B2 (en) 2018-08-28
US8860039B2 (en) 2014-10-14

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