JP6715210B2 - 窒化物半導体装置の製造方法 - Google Patents
窒化物半導体装置の製造方法 Download PDFInfo
- Publication number
- JP6715210B2 JP6715210B2 JP2017083050A JP2017083050A JP6715210B2 JP 6715210 B2 JP6715210 B2 JP 6715210B2 JP 2017083050 A JP2017083050 A JP 2017083050A JP 2017083050 A JP2017083050 A JP 2017083050A JP 6715210 B2 JP6715210 B2 JP 6715210B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- trench
- type
- body region
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 186
- 150000004767 nitrides Chemical class 0.000 title claims description 90
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 34
- 210000000746 body region Anatomy 0.000 claims description 116
- 239000000463 material Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 86
- 230000005684 electric field Effects 0.000 description 74
- 239000012535 impurity Substances 0.000 description 23
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 14
- 230000004048 modification Effects 0.000 description 12
- 238000012986 modification Methods 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 238000002109 crystal growth method Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Landscapes
- Recrystallisation Techniques (AREA)
Description
3:基板
4:窒化物半導体層
5a、5b:ボディ領域
6a、6b:ソース領域
7:JFET領域
8:ゲート電極
9:ソース電極
10、10a、10b、10c:半導体装置
12:ゲート絶縁膜
13a、13b、113a、113b、213a、213b、313a、313b:電界緩和領域
14、314、315:窒化物二次半導体層
15:p型半導体層
16、216、316:トレンチ
216b:サブトレンチ
Claims (2)
- 窒化物半導体装置の製造方法であり、
基板の上にn型の窒化物半導体層を形成するドリフト層形成工程と、
前記窒化物半導体層の上にp型のボディ領域を形成するボディ領域形成工程と、
前記窒化物半導体層に達するトレンチを形成して前記ボディ領域を二分するトレンチ形成工程と、
前記ボディ領域を加熱して前記トレンチの側面に露出している前記ボディ領域のp型の半導体物質を前記トレンチの底の前記ボディ領域寄りの端へ移動させるマストランスポート工程と、
前記トレンチにてn型の窒化物半導体をエピタキシャル成長させて前記トレンチをn型の窒化物半導体で埋める再成長工程と、
を備えている、窒化物半導体装置の製造方法。 - 前記トレンチ形成工程にて、前記トレンチの前記底のボディ領域寄りの端に前記底の中央よりも深いサブトレンチを形成し、
前記マストランスポート工程にて、前記ボディ領域のp型の前記半導体物質を前記サブトレンチへ移動させる、請求項1に記載の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017083050A JP6715210B2 (ja) | 2017-04-19 | 2017-04-19 | 窒化物半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017083050A JP6715210B2 (ja) | 2017-04-19 | 2017-04-19 | 窒化物半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018182197A JP2018182197A (ja) | 2018-11-15 |
JP6715210B2 true JP6715210B2 (ja) | 2020-07-01 |
Family
ID=64277142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017083050A Active JP6715210B2 (ja) | 2017-04-19 | 2017-04-19 | 窒化物半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6715210B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021079471A1 (ja) * | 2019-10-24 | 2021-04-29 | 株式会社デンソー | 半導体装置とその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5917204A (en) * | 1997-03-31 | 1999-06-29 | Motorola, Inc. | Insulated gate bipolar transistor with reduced electric fields |
JP5619152B2 (ja) * | 2010-04-26 | 2014-11-05 | 三菱電機株式会社 | 半導体装置 |
-
2017
- 2017-04-19 JP JP2017083050A patent/JP6715210B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2018182197A (ja) | 2018-11-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9722017B2 (en) | Silicon carbide semiconductor device | |
JP6706767B2 (ja) | 半導体装置 | |
JP5685736B2 (ja) | 半導体装置及びその製造方法 | |
JP5834179B2 (ja) | 炭化珪素半導体装置の製造方法 | |
US9269781B2 (en) | Semiconductor device and method for manufacturing the same | |
JP5234927B2 (ja) | 半導体装置の製造方法 | |
US9773883B2 (en) | Method for manufacturing insulated gate type switching device having low-density body region and high-density body region | |
JP2014063949A (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP2018026562A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2019121705A (ja) | 窒化物半導体装置とその製造方法 | |
US9660046B2 (en) | Method of manufacturing semiconductor device | |
KR20160018322A (ko) | 반도체 장치의 제조 방법 | |
CN107706238B (zh) | Hemt器件及其制造方法 | |
JP6715210B2 (ja) | 窒化物半導体装置の製造方法 | |
JP2010027833A (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP2009246205A (ja) | 半導体装置および半導体装置の製造方法 | |
US20220406614A1 (en) | Semiconductor device and method for manufacturing thereof | |
JP2016157801A (ja) | 半導体装置およびその製造方法 | |
US20170154993A1 (en) | Reduced Gate Charge Field-Effect Transistor | |
JP2009038200A (ja) | 半導体装置 | |
JP6265928B2 (ja) | 電力用半導体装置 | |
JP7120886B2 (ja) | スイッチング素子の製造方法 | |
JP7139820B2 (ja) | 窒化物半導体装置とその製造方法 | |
JP7318553B2 (ja) | スイッチング素子の製造方法 | |
JP2023128697A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190606 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200331 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200330 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200501 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200602 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200608 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6715210 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |