JP6947338B1 - 炭化珪素半導体装置および電力変換装置の製造方法 - Google Patents
炭化珪素半導体装置および電力変換装置の製造方法 Download PDFInfo
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- JP6947338B1 JP6947338B1 JP2021521449A JP2021521449A JP6947338B1 JP 6947338 B1 JP6947338 B1 JP 6947338B1 JP 2021521449 A JP2021521449 A JP 2021521449A JP 2021521449 A JP2021521449 A JP 2021521449A JP 6947338 B1 JP6947338 B1 JP 6947338B1
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- silicon carbide
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 119
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Abstract
Description
SBDを内蔵されたSiC−MOSFETにおいて、ショットキーコンタクトとオーミックコンタクトを同一コンタクトホール内に形成し、ショットキーコンタクト形成予定箇所を保護膜で覆った状態でオーミックコンタクトのためのオーミック電極を形成し、オーミック電極を形成した後で、保護膜をフッ酸で除去した面にショットキー電極を形成することによりショットキーコンタクトを形成して製造する方法が知られていた(例えば特許文献1)。
まず、本開示の実施の形態1にかかる製造方法で製造される炭化珪素半導体装置の構成を説明する。
図1は、実施の形態1にかかる製造方法で製造される炭化珪素半導体装置であるショットキーバリアダイオード内蔵炭化珪素MOSFET(SBD内蔵SiC−MOSFET)の活性領域の単位セルの断面図である。
また、半導体基板10のドリフト層20と反対側の面には、裏面オーミック電極71とその外側にドレイン電極85とが形成されている。
図2からわかるように、図1で複数あるように見えるウェル領域30などは、断面図の奥行き方向で繋がっていてもよい。また、図1〜図3で示した単位セルの構造が繰り返し配置されて活性領域となる。
まず、第1主面の面方位がオフ角を有する(0001)面であり、4Hのポリタイプを有する、n型で低抵抗の炭化珪素からなる半導体基板10の上に、化学気相堆積法(Chemical Vapor Deposition:CVD法)により、1×1015から1×1017cm−3の不純物濃度でn型、5から80μmの厚さの炭化珪素からなるドリフト層20をエピタキシャル成長させる。ドリフト層20の厚さは、炭化珪素半導体装置の耐圧によっては、80μm以上であってもよい。
また、同様の方法により、ウェル領域30の内側の所定の領域にウェル領域30の不純物濃度より高い不純物濃度でAlをイオン注入することにより、コンタクト領域35を形成する。
つづいて、ドリフト層20、ウェル領域30、ソース領域40、およびコンタクト領域35の炭化珪素表面を熱酸化して所定の厚さのゲート絶縁膜50である酸化珪素膜を形成する。次に、ゲート絶縁膜50の上に、導電性を有する多結晶シリコン膜を減圧CVD法により形成し、これをパターニングすることによりゲート電極60を形成する。つづいて、酸化珪素からなる層間絶縁膜55を減圧CVD法により形成する。
また、半導体基板10上のドリフト層20が形成されていない面に裏面オーミック電極71を形成し、図4にその断面図を示す構造を形成する。
図5は、コンタクトホール内にオーミック電極70が形成された段階のものの断面図であり、オーミック電極70は、ゲート絶縁膜50またはゲート絶縁膜50と層間絶縁膜55とに隣接している。
また、シリサイドは、ニッケルシリサイドに限るもので無く、チタンシリサイド、アルミニウムシリサイドなどであってもよい。
さらに、被エッチング膜である絶縁膜が、酸化珪素膜である例を説明したが、被エッチング膜は、窒素、燐、ホウ素を含む酸化珪素膜であってもよい。
まず、本開示の実施の形態2にかかる製造方法で製造される炭化珪素半導体装置の構成を説明する。
図14は、実施の形態2にかかる製造方法で製造される炭化珪素半導体装置であるショットキーバリアダイオード内蔵炭化珪素MOSFET(SBD内蔵SiC−MOSFET)の活性領域の単位セルの断面模式図である。また、図15は、同SBD内蔵SiC−MOSFETの活性領域の単位セルの平面模式図であり、破線でオーミック電極70形成領域を記載している。図14の(a)は、図15のソース領域40がある断面を、図14の(b)は、図15のコンタクト領域35がある断面をそれぞれ示している。以降の図16〜図23においても、それぞれの(a)が図15のソース領域40がある断面を、(b)が図15のコンタクト領域35がある断面を示している。
半導体基板10のドリフト層20と反対側の面には、裏面オーミック電極71とその外側にドレイン電極85とが形成されている。
図16は、図14、図15で示した本開示の実施の形態2にかかるSBD内蔵SiC−MOSFETの製造工程の途中段階の状態を示す断面模式図であり、この段階までの工程を説明しておく。
また、同様の方法により、ウェル領域30の内側の所定の領域にウェル領域30の不純物濃度より高い不純物濃度でAlをイオン注入することにより、コンタクト領域35を形成する。
次に、ゲートトレンチGTとショットキートレンチSTとの内部を含む炭化珪素表面を熱酸化して所定の厚さのゲート絶縁膜50である酸化珪素膜を形成する。次に、ゲート絶縁膜50の上に、導電性を有する多結晶シリコン膜を減圧CVD法により形成し、これをパターニング、エッチバックすることにより、ゲートトレンチGT側だけにゲート電極60を形成する。つづいて、図18にその断面模式図を示すように、酸化珪素からなる層間絶縁膜55を減圧CVD法により形成する。
つづいて、図21にその断面図を示すように、酸化層75が除去されたオーミック電極70、層間絶縁膜55の表面上に、ゲート電極60が形成された方の絶縁膜と隣接している方とは反対側を開口させて、ショットキートレンチSTの上方の層間絶縁膜55をエッチングするためのレジストマスク90をフォトリソグラフィー法により形成する。
また、ウェル領域30とソース領域40とをイオン注入法では無くエピタキシャル法で形成してもよい。
実施の形態1では、第1離間領域21の表面のショットキー接合面になる面を含む領域の上方のゲート絶縁膜50と層間絶縁膜55とを残した状態でオーミック電極70を形成し、その後、第1離間領域21の表面上のゲート絶縁膜50と層間絶縁膜55とをウェットエッチングしたが、本実施の形態では、第1離間領域21の表面のショットキー接合面になる面を含む領域とオーミック電極70を形成する領域との上のゲート絶縁膜50と層間絶縁膜55とを一緒に一度に除去した後で、第1離間領域21の表面のショットキー接合面になる面を別の保護膜で保護した状態でオーミック電極70を形成する点が異なる。その他の点については、実施の形態1と同様であるので、詳しい説明は省略する。
以下、本開示の実施の形態3にかかる炭化珪素半導体装置であるSBD内蔵SiC−MOSFETの製造方法について、図24〜図29の断面図を用いて説明する。
つづいて、図28にその断面図を示すように、酸化層75が除去されたオーミック電極70、層間絶縁膜55の表面上に、ゲート電極60が形成された方の絶縁膜と隣接している方とは反対側を開口させて、第1離間領域21の表面を含む領域の上方の犠牲酸化膜51とをエッチングするためのレジストマスク90をフォトリソグラフィー法により形成する。次に、図29にその断面図を示すように、フッ酸を含むエッチング液を用いて第1離間領域21の表面を含む領域の上方の犠牲酸化膜51をウェットエッチングする。この場合、犠牲酸化膜51が被エッチング膜になる。ウェットエッチングする領域は、第1離間領域21、第1離間領域21と隣接するウェル領域30の表面、および、コンタクト領域35の表面を含む領域である。
本実施の形態は、上述した実施の形態1〜3にかかる炭化珪素半導体装置の製造方法を電力変換装置の製造に適用したものである。本開示は特定の電力変換装置の製造方法に限定されるものではないが、以下、実施の形態4として、三相のインバータの製造方法に本開示を適用した場合について説明する。
駆動回路202は、ノーマリオフ型の各スイッチング素子を、ゲート電極の電圧とソース電極の電圧とを同電位にすることによってオフ制御している。
本実施の形態に係る電力変換装置の製造方法では、主変換回路201のスイッチング素子として実施の形態1〜3にかかる炭化珪素半導体装置の製造方法で製造された炭化珪素半導体装置を適用するため、低損失、かつ、高速スイッチングの信頼性を高めた電力変換装置を実現することができる。
Claims (14)
- 炭化珪素層の上方の一部に絶縁膜を形成する工程と、
前記絶縁膜に隣接して前記炭化珪素層上にオーミック電極を形成する工程と、
前記オーミック電極上の酸化層を除去する工程と、
前記オーミック電極が前記絶縁膜と隣接している方とは反対側を開口させて、前記酸化層が除去された前記オーミック電極上および前記絶縁膜上にマスクを形成する工程と、
前記マスクが形成された状態でフッ酸により被エッチング膜をウェットエッチングする工程と、
前記被エッチング膜をウェットエッチングした後に前記マスクを除去する工程と、
を備えたことを特徴とする炭化珪素半導体装置の製造方法。 - 前記酸化層をフッ酸を用いたライトエッチングにより除去する
請求項1に記載の炭化珪素半導体装置の製造方法。 - 前記オーミック電極は、シリサイドである
請求項1または2に記載の炭化珪素半導体装置の製造方法。 - 前記シリサイドは、ニッケルシリサイドである
請求項3に記載の炭化珪素半導体装置の製造方法。 - 前記被エッチング膜は、酸化珪素である
請求項1から4のいずれか1項に記載の炭化珪素半導体装置の製造方法。 - 前記絶縁膜は、酸化珪素である
請求項1から5のいずれか1項に記載の炭化珪素半導体装置の製造方法。 - 前記ウェットエッチングにより前記被エッチング膜が除去された前記炭化珪素層の表面に前記炭化珪素層とソース電極とが接合したショットキー界面を形成する
請求項1から6のいずれか1項に記載の炭化珪素半導体装置の製造方法。 - 前記絶縁膜は、MOSFETのゲート電極に接して形成される層間絶縁膜であり、
前記炭化珪素半導体装置は、SBD内蔵MOSFETである
請求項7に記載の炭化珪素半導体装置の製造方法。 - 前記SBD内蔵MOSFETは、前記層間絶縁膜を貫通して形成された一つのコンタクトホール内に前記オーミック電極と前記ショットキー界面とを備えた
請求項8に記載の炭化珪素半導体装置の製造方法。 - 前記ショットキー界面は、前記オーミック電極に囲まれて形成された
請求項9に記載の炭化珪素半導体装置の製造方法。 - 前記SBD内蔵MOSFETは、
トレンチ型のMOSFETとトレンチに形成されたSBDを備えた
請求項8から10のいずれか1項に記載の炭化珪素半導体装置の製造方法。 - 前記被エッチング膜は、前記絶縁膜と同じ膜である
請求項5に記載の炭化珪素半導体装置の製造方法。 - 前記被エッチング膜は、犠牲酸化膜である
請求項5に記載の炭化珪素半導体装置の製造方法。 - 請求項1〜13のいずれか1項に記載の炭化珪素半導体装置の製造方法によって製造された炭化珪素半導体装置を有し、入力される電力を変換して出力する主変換回路と、
前記炭化珪素半導体装置のゲート電極の電圧を閾値電圧以下にすることによってオフ動作させ、前記炭化珪素半導体装置を駆動する駆動信号を前記炭化珪素半導体装置に出力する駆動回路と、
前記駆動回路を制御する制御信号を前記駆動回路に出力する制御回路と、
を備えた電力変換装置の製造方法。
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