DE112004000768B4 - Verfahren zum Trennen eines plattenartigen Elements - Google Patents

Verfahren zum Trennen eines plattenartigen Elements Download PDF

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Publication number
DE112004000768B4
DE112004000768B4 DE112004000768.2T DE112004000768T DE112004000768B4 DE 112004000768 B4 DE112004000768 B4 DE 112004000768B4 DE 112004000768 T DE112004000768 T DE 112004000768T DE 112004000768 B4 DE112004000768 B4 DE 112004000768B4
Authority
DE
Germany
Prior art keywords
chips
wafer
plate
tape
separating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112004000768.2T
Other languages
German (de)
English (en)
Other versions
DE112004000768T5 (de
Inventor
Yasuyuki Sakaya
Masayuki Azuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Seimitsu Co Ltd
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Publication of DE112004000768T5 publication Critical patent/DE112004000768T5/de
Application granted granted Critical
Publication of DE112004000768B4 publication Critical patent/DE112004000768B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H10P72/0442—
    • H10P54/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0052—Means for supporting or holding work during breaking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
DE112004000768.2T 2003-05-12 2004-04-30 Verfahren zum Trennen eines plattenartigen Elements Expired - Fee Related DE112004000768B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003132573 2003-05-12
JP2003-132573 2003-05-12
PCT/JP2004/006321 WO2004100240A1 (ja) 2003-05-12 2004-04-30 板状部材の分割方法及び分割装置

Publications (2)

Publication Number Publication Date
DE112004000768T5 DE112004000768T5 (de) 2006-03-30
DE112004000768B4 true DE112004000768B4 (de) 2015-07-23

Family

ID=33432169

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112004000768.2T Expired - Fee Related DE112004000768B4 (de) 2003-05-12 2004-04-30 Verfahren zum Trennen eines plattenartigen Elements

Country Status (6)

Country Link
US (1) US7410831B2 (enExample)
JP (1) JP4599631B2 (enExample)
KR (1) KR101121495B1 (enExample)
DE (1) DE112004000768B4 (enExample)
TW (1) TW200511407A (enExample)
WO (1) WO2004100240A1 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150235A (ja) * 2003-11-12 2005-06-09 Three M Innovative Properties Co 半導体表面保護シート及び方法
JP2006229021A (ja) 2005-02-18 2006-08-31 Disco Abrasive Syst Ltd ウエーハの分割方法
JP4630689B2 (ja) * 2005-03-01 2011-02-09 株式会社ディスコ ウエーハの分割方法
JP4777761B2 (ja) * 2005-12-02 2011-09-21 株式会社ディスコ ウエーハの分割方法
JP4833657B2 (ja) * 2005-12-19 2011-12-07 株式会社ディスコ ウエーハの分割方法
KR100679684B1 (ko) * 2006-02-16 2007-02-06 삼성전자주식회사 외곽에 보호층이 형성된 웨이퍼 레벨 반도체 소자 제조방법
GB2454603B (en) * 2006-02-24 2010-05-05 Wolfson Microelectronics Plc Mems device
JP2007250598A (ja) * 2006-03-14 2007-09-27 Renesas Technology Corp 半導体装置の製造方法
JP2007266557A (ja) * 2006-03-30 2007-10-11 Renesas Technology Corp 半導体装置の製造方法
JP4847199B2 (ja) * 2006-04-25 2011-12-28 株式会社ディスコ ウエーハに装着された接着フィルムの破断方法
US8022145B2 (en) * 2007-03-16 2011-09-20 3M Innovative Properties Company Dicing and die attach adhesive
JP2008235398A (ja) * 2007-03-19 2008-10-02 Disco Abrasive Syst Ltd デバイスの製造方法
US20090008032A1 (en) * 2007-07-03 2009-01-08 Assembleon B.V. Method for picking up a component as well as a device suitable for carrying out such a method
JP4851415B2 (ja) * 2007-10-10 2012-01-11 日東電工株式会社 紫外線照射方法およびこれを用いた装置
JP2011513995A (ja) * 2008-03-07 2011-04-28 スリーエム イノベイティブ プロパティズ カンパニー 模様付き裏材を備えるダイシングテープ及びダイアタッチ接着剤
US20100003119A1 (en) * 2008-07-07 2010-01-07 Disco Corporation Method for picking up device attached with adhesive tape
US9768305B2 (en) 2009-05-29 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Gradient ternary or quaternary multiple-gate transistor
JP2011077429A (ja) * 2009-10-01 2011-04-14 Disco Abrasive Syst Ltd ワーク分割方法
JP2011210832A (ja) * 2010-03-29 2011-10-20 Hitachi Chem Co Ltd 半導体装置の製造方法
US8722540B2 (en) * 2010-07-22 2014-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. Controlling defects in thin wafer handling
JP2012227232A (ja) * 2011-04-15 2012-11-15 Denki Kagaku Kogyo Kk 加工用粘着シート及びそれを用いた板状材料の製造方法
US8501590B2 (en) * 2011-07-05 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and methods for dicing interposer assembly
US20140107698A1 (en) * 2012-10-04 2014-04-17 Children's Hospital Medical Center Gastric traction device and method
US9016552B2 (en) * 2013-03-15 2015-04-28 Sanmina Corporation Method for forming interposers and stacked memory devices
JP6158551B2 (ja) * 2013-03-26 2017-07-05 株式会社ディスコ ウェーハの分割方法
JP2015133434A (ja) * 2014-01-15 2015-07-23 株式会社ディスコ 板状物の分割方法及び紫外線照射ユニット
JP6951124B2 (ja) * 2017-05-23 2021-10-20 株式会社ディスコ 加工方法
JP6985072B2 (ja) * 2017-09-06 2021-12-22 新光電気工業株式会社 リードフレーム及びその製造方法
KR102152459B1 (ko) * 2018-07-24 2020-09-07 한국기계연구원 마이크로 소자의 간격 조절 전사방법
JP2020177963A (ja) * 2019-04-16 2020-10-29 株式会社デンソー 半導体チップの製造方法
CN110480852B (zh) * 2019-07-12 2021-07-09 大族激光科技产业集团股份有限公司 Led晶圆片的切割裂片方法及系统
JP7623821B2 (ja) * 2020-11-09 2025-01-29 株式会社ディスコ ウエーハの加工方法及びレーザー加工装置
CN112447560B (zh) * 2020-11-30 2022-11-01 青岛歌尔微电子研究院有限公司 一种切割辅助装置、芯片封装结构的切割方法、以及电子器件
WO2023100831A1 (ja) * 2021-11-30 2023-06-08 ボンドテック株式会社 チップ周部剥離装置、チップ供給装置、チップ供給システム、チップ接合システム、ピックアップ装置、チップ周部剥離方法、チップ供給方法、チップ接合方法およびピックアップ方法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5304418A (en) * 1991-12-30 1994-04-19 Nitto Denko Corporation Dicing-die bonding film
JPH06188310A (ja) * 1992-12-22 1994-07-08 Lintec Corp ウェハダイシング方法、およびこの方法に用いる放射線照射装置ならびにウェハ貼着用粘着シート
US20010008300A1 (en) * 1998-11-27 2001-07-19 Ipics Corporation Semiconductor device with flat protective adhesive sheet and method of manufacturing the same
JP2002110588A (ja) * 2000-09-27 2002-04-12 Nec Kansai Ltd チップ製造装置
JP2002192367A (ja) * 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法
JP2002192368A (ja) * 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工装置
JP2002192371A (ja) * 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP2002192369A (ja) * 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP2002205180A (ja) * 2000-09-13 2002-07-23 Hamamatsu Photonics Kk レーザ加工方法
JP2002334852A (ja) * 2001-05-10 2002-11-22 Disco Abrasive Syst Ltd 被加工物の分割処理方法および分割処理方法に用いるチップ間隔拡張装置
JP2003033887A (ja) * 2000-09-13 2003-02-04 Hamamatsu Photonics Kk レーザ加工方法
JP2004079746A (ja) * 2002-08-16 2004-03-11 Tokyo Seimitsu Co Ltd チップ製造方法
DE102004012012A1 (de) * 2003-03-11 2004-10-21 Disco Corp. Verfahren zum Teilen eines Halbleiterwafers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267452A (ja) * 1992-03-18 1993-10-15 Fujitsu Miyagi Electron:Kk 半導体装置の製造方法
JP3410202B2 (ja) * 1993-04-28 2003-05-26 日本テキサス・インスツルメンツ株式会社 ウェハ貼着用粘着シートおよびこれを用いた半導体装置の製造方法
JP3538070B2 (ja) * 1999-07-08 2004-06-14 株式会社東芝 半導体装置の製造方法
JP3408805B2 (ja) * 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP4358502B2 (ja) * 2002-03-12 2009-11-04 浜松ホトニクス株式会社 半導体基板の切断方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5304418A (en) * 1991-12-30 1994-04-19 Nitto Denko Corporation Dicing-die bonding film
JPH06188310A (ja) * 1992-12-22 1994-07-08 Lintec Corp ウェハダイシング方法、およびこの方法に用いる放射線照射装置ならびにウェハ貼着用粘着シート
US20010008300A1 (en) * 1998-11-27 2001-07-19 Ipics Corporation Semiconductor device with flat protective adhesive sheet and method of manufacturing the same
JP2003033887A (ja) * 2000-09-13 2003-02-04 Hamamatsu Photonics Kk レーザ加工方法
JP2002192367A (ja) * 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法
JP2002192368A (ja) * 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工装置
JP2002192371A (ja) * 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP2002192369A (ja) * 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP2002205180A (ja) * 2000-09-13 2002-07-23 Hamamatsu Photonics Kk レーザ加工方法
JP2002110588A (ja) * 2000-09-27 2002-04-12 Nec Kansai Ltd チップ製造装置
JP2002334852A (ja) * 2001-05-10 2002-11-22 Disco Abrasive Syst Ltd 被加工物の分割処理方法および分割処理方法に用いるチップ間隔拡張装置
JP2004079746A (ja) * 2002-08-16 2004-03-11 Tokyo Seimitsu Co Ltd チップ製造方法
DE102004012012A1 (de) * 2003-03-11 2004-10-21 Disco Corp. Verfahren zum Teilen eines Halbleiterwafers

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP 06188310 A
JP 2002-110588 A

Also Published As

Publication number Publication date
DE112004000768T5 (de) 2006-03-30
TWI355687B (enExample) 2012-01-01
WO2004100240A1 (ja) 2004-11-18
JP4599631B2 (ja) 2010-12-15
JPWO2004100240A1 (ja) 2006-07-13
KR20060003372A (ko) 2006-01-10
US20060211220A1 (en) 2006-09-21
TW200511407A (en) 2005-03-16
US7410831B2 (en) 2008-08-12
KR101121495B1 (ko) 2012-03-15

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee