DE10361038A1 - Differenzverstärker und Bitleitungs-Leseverstärker, der denselben übernimmt - Google Patents

Differenzverstärker und Bitleitungs-Leseverstärker, der denselben übernimmt Download PDF

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Publication number
DE10361038A1
DE10361038A1 DE10361038A DE10361038A DE10361038A1 DE 10361038 A1 DE10361038 A1 DE 10361038A1 DE 10361038 A DE10361038 A DE 10361038A DE 10361038 A DE10361038 A DE 10361038A DE 10361038 A1 DE10361038 A1 DE 10361038A1
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Germany
Prior art keywords
amplifier
sense amplifier
bit line
differential amplifier
differential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10361038A
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English (en)
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DE10361038B4 (de
Inventor
Kwang Myoung Rho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
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Hynix Semiconductor Inc
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Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of DE10361038A1 publication Critical patent/DE10361038A1/de
Application granted granted Critical
Publication of DE10361038B4 publication Critical patent/DE10361038B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H03K5/2481—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage

Abstract

Es wird ein Bitleitungs-Leseverstärker offenbart, der Folgendes aufweist: Schaltelemente zum aufeinanderfolgenden Modifizieren eines Leseverstärkers in dieser Reihenfolge zu einem Differenzverstärker mit negativer Rückkopplung, zu einem normalen Differenzverstärker, zu einem Differenzverstärker mit positiver Rückkopplung, und zu einem über Kreuz gekoppelten Latch, wobei der Leseverstärker Daten von einem Bitleitungspaar in einem Halbleiterspeicher liest; und einem zwischen einem der Differenzverstärker und einer gemeinsamen Stromquelle angeschlossenen Transistor, wobei der Transistor einen Widerstand aufweist, welcher variabel in Abhängigkeit von einem Potential eines Ausgangs eines der Differenzverstärker ist oder durch eine andere Energiequelle konstant bleibt.
DE10361038.3A 2003-10-02 2003-12-23 Modifizierbarer Bitleitungs-Leseverstärker Expired - Fee Related DE10361038B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020030068582A KR100542710B1 (ko) 2003-10-02 2003-10-02 차동 증폭기 및 이를 채용한 비트라인 센스 증폭기
KR2003/68582 2003-10-02

Publications (2)

Publication Number Publication Date
DE10361038A1 true DE10361038A1 (de) 2005-04-21
DE10361038B4 DE10361038B4 (de) 2014-05-28

Family

ID=34374255

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10361038.3A Expired - Fee Related DE10361038B4 (de) 2003-10-02 2003-12-23 Modifizierbarer Bitleitungs-Leseverstärker

Country Status (6)

Country Link
US (2) US20050073339A1 (de)
JP (1) JP4557206B2 (de)
KR (1) KR100542710B1 (de)
CN (1) CN100492892C (de)
DE (1) DE10361038B4 (de)
TW (1) TWI281779B (de)

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JP4965883B2 (ja) * 2006-04-07 2012-07-04 株式会社東芝 半導体集積回路装置および半導体集積回路装置のトリミング方法
US7545694B2 (en) * 2006-08-16 2009-06-09 Cypress Semiconductor Corporation Sense amplifier with leakage testing and read debug capability
US9122092B2 (en) * 2007-06-22 2015-09-01 Google Technology Holdings LLC Colored morphing apparatus for an electronic device
KR100930400B1 (ko) * 2007-08-13 2009-12-08 주식회사 하이닉스반도체 차동 증폭기 및 이를 이용한 입력 회로
US8014218B2 (en) * 2008-12-24 2011-09-06 International Business Machines Corporation Capacitively isolated mismatch compensated sense amplifier
JP5240056B2 (ja) * 2009-05-12 2013-07-17 富士通セミコンダクター株式会社 半導体メモリおよびシステム
KR101047051B1 (ko) * 2009-05-20 2011-07-06 주식회사 하이닉스반도체 비휘발성 반도체 메모리 회로
KR101053525B1 (ko) * 2009-06-30 2011-08-03 주식회사 하이닉스반도체 감지 증폭기 및 이를 이용한 반도체 집적회로
US8125840B2 (en) * 2009-08-31 2012-02-28 International Business Machines Corporation Reference level generation with offset compensation for sense amplifier
KR20140023806A (ko) 2012-08-17 2014-02-27 삼성전자주식회사 자기 저항 메모리 장치의 배치 구조
JP6088201B2 (ja) * 2012-10-24 2017-03-01 ルネサスエレクトロニクス株式会社 半導体装置
US9577637B2 (en) * 2014-02-19 2017-02-21 Altera Corporation Stability-enhanced physically unclonable function circuitry
US9691462B2 (en) * 2014-09-27 2017-06-27 Qualcomm Incorporated Latch offset cancelation for magnetoresistive random access memory
KR102288481B1 (ko) * 2015-04-22 2021-08-10 에스케이하이닉스 주식회사 반도체 장치의 센스앰프
CN105070310B (zh) * 2015-08-11 2018-03-09 深圳芯邦科技股份有限公司 一种带失调校正的灵敏放大器
KR20170030304A (ko) 2015-09-09 2017-03-17 삼성전자주식회사 스위처블 감지 증폭기를 갖는 메모리 장치
US9799395B2 (en) * 2015-11-30 2017-10-24 Texas Instruments Incorporated Sense amplifier in low power and high performance SRAM
KR102562312B1 (ko) 2016-08-24 2023-08-01 삼성전자주식회사 비트라인 센스 앰프
KR102589761B1 (ko) * 2016-10-18 2023-10-18 에스케이하이닉스 주식회사 데이터 감지 증폭 회로 및 반도체 메모리 장치
KR20180076842A (ko) 2016-12-28 2018-07-06 삼성전자주식회사 오프셋 제거 기능을 갖는 감지 증폭기
KR20200131550A (ko) * 2019-05-14 2020-11-24 에스케이하이닉스 주식회사 반도체 장치의 데이터 감지 회로
CN111429955B (zh) * 2020-03-10 2021-12-10 北京中科银河芯科技有限公司 读出放大器、存储数据读出方法、集成电路及电子设备
US11961551B2 (en) 2021-04-09 2024-04-16 Samsung Electronics Co., Ltd. Bitline sense amplifier and a memory device with an equalizer

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
JPH0341698A (ja) * 1989-07-10 1991-02-22 Toshiba Corp センス回路
US5276369A (en) * 1989-07-20 1994-01-04 Kabushiki Kaisha Toshiba Sense amplifier circuit having a bias current control means
JPH05166365A (ja) * 1991-12-12 1993-07-02 Toshiba Corp ダイナミック型半導体記憶装置
US5347183A (en) * 1992-10-05 1994-09-13 Cypress Semiconductor Corporation Sense amplifier with limited output voltage swing and cross-coupled tail device feedback
JPH06236689A (ja) * 1993-02-08 1994-08-23 Hitachi Ltd 半導体集積回路
US5451898A (en) * 1993-11-12 1995-09-19 Rambus, Inc. Bias circuit and differential amplifier having stabilized output swing
US5982673A (en) * 1997-09-30 1999-11-09 Siemens Aktiengesellschaft Secondary sense amplifier with window discriminator for self-timed operation
US6037807A (en) * 1998-05-18 2000-03-14 Integrated Device Technology, Inc. Synchronous sense amplifier with temperature and voltage compensated translator
KR100322539B1 (ko) * 1999-07-10 2002-03-18 윤종용 반도체 집적회로의 감지 증폭장치
US6466501B2 (en) * 2000-06-28 2002-10-15 Hynix Semiconductor Inc. Semiconductor memory device having sense amplifier and method for driving sense amplifier
US20020149400A1 (en) * 2001-04-16 2002-10-17 Namik Kocaman Low voltage differential to single-ended converter
JP2003100992A (ja) * 2001-06-21 2003-04-04 Toshiba Corp センスアンプ
KR100414210B1 (ko) * 2001-11-19 2004-01-13 삼성전자주식회사 반도체 메모리 장치

Also Published As

Publication number Publication date
KR20050032664A (ko) 2005-04-08
KR100542710B1 (ko) 2006-01-11
TWI281779B (en) 2007-05-21
TW200514348A (en) 2005-04-16
CN1604463A (zh) 2005-04-06
US7123531B2 (en) 2006-10-17
JP2005116143A (ja) 2005-04-28
JP4557206B2 (ja) 2010-10-06
US20050219925A1 (en) 2005-10-06
DE10361038B4 (de) 2014-05-28
US20050073339A1 (en) 2005-04-07
CN100492892C (zh) 2009-05-27

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8127 New person/name/address of the applicant

Owner name: MAGNACHIP SEMICONDUCTOR, LTD., CHEONGJU, KR

8127 New person/name/address of the applicant

Owner name: HYNIX SEMICONDUCTOR INC., ICHON, KYONGGI, KR

8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: G11C 7/06 AFI20051017BHDE

R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R020 Patent grant now final

Effective date: 20150303

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee