CN86101795A - 半导体器件及其生产方法，以及上述工艺所用的引线框架 - Google Patents

半导体器件及其生产方法，以及上述工艺所用的引线框架 Download PDF

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Publication number
CN86101795A
CN86101795A CN198686101795A CN86101795A CN86101795A CN 86101795 A CN86101795 A CN 86101795A CN 198686101795 A CN198686101795 A CN 198686101795A CN 86101795 A CN86101795 A CN 86101795A CN 86101795 A CN86101795 A CN 86101795A
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lead
chip
semiconductor device
wire
mentioned
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冲永隆章
馆宏
尾崎弘
大冢宽治
古川道明
山崎康行
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Greek Hitachi Engineering Co Ltd
Hitachi Ltd
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Greek Hitachi Engineering Co Ltd
Hitachi Ltd
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Priority to CN90110138A priority Critical patent/CN1023675C/zh
Publication of CN86101795A publication Critical patent/CN86101795A/zh
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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

本发明通过在芯片的电路形成面或在该面附近、或者在芯片的主要非电路形成面或在其附近延伸引线，从而在该芯片之上或其附近延长内引线的长度来改进树脂封装半导体器件中内引线与封装树脂的粘合力。

Description

本发明是关于能有效应用于树脂封装式半导体器件芯片的电连接技术。
图8为普通引线框架的平面图，该引线框架在普通树脂封装式半导体器件，特别是树脂封装型64KSRAM大规模集成电路的生产中使用。图中，数码100表示框架，101为外引线，102为内引线，103为连接杆，104为台面，105为台面的引线。
在树脂封装式半导体器件中有这样一种趋势，即管壳边缘与固定芯片的台面之间的距离随着芯片尺寸增大的趋势而越来越窄。其原因是由于对于芯片来说，管壳的尺寸是标准化了的，尽管芯片的尺寸在增大，管壳的尺寸却不能变大。
因此，可以预料这必然会大大降低所谓短引线的粘着性，因为在结构上，作为外电极的这些导线埋在构成管壳的树脂中的那部分长度较短，所以引线很易脱落，而且在引线弯曲过程中，引线与树脂之间很易产生剥离。
本发明的发明人发现这可能导致低劣的电接触、降低抗湿性等，从而降低半导体器件的可靠性。
1980年1月15日，株式会社工业调查会发行、日本微电子学协会编写的《集成电路安装技术》一书的149-150页上对树脂封装式半导体器件作了描述。
本发明的目的是提供显著改进树脂封装半导体器件，特别是安装大芯片的半导体器件中封装树脂与引线的粘结力的技术。
本发明的上述及其它目的，以及新颖特征将由下面的说明及附图表达清楚。
这里简单阐述一下本申请要公开的发明中一个有代表性的发明的概要。
准确地说，内引线与构成管壳的树脂间的粘结力是这样来加以改善的，即在树脂封装的半导体器件中使引线延伸到待安装芯片的电路形成面上或其附近，或者延伸到此芯片主要的非电路形成面上或其附近，这样就能使内引线延长。
本发明的上述及其它目的，以及新颖特征将由下列关于附图所作的说明部分表达清楚，其中：
图1为沿图2中Ⅰ-Ⅰ线的剖面图，它表示本发明的实施例Ⅰ的半导体器件;
图2为表示实施例1的半导体器件的芯片与引线关系的平面图;
图3为实施例1的半导体器件中所用引线框架的部分平面图，它表示了电镀过程中框架的状态;
图4为表示本发明的实施例2的半导体器件的芯片与引线关系的平面图;
图5为沿图4中Ⅴ-Ⅴ线的部分剖面图，它表示出实施例2的半导体器件的内部结构;
图6为沿图7Ⅵ-Ⅵ线的剖面图，图7表示本发明的实施例3的半导体器件;
图7为表示实施例3的半导体器件的芯片与引线间关系的平面图;
图8为普通树脂封装的半导体器件生产中所用的引线框架的平面图。
〔实施例1〕
图1为沿图2中Ⅰ-Ⅰ线的剖面图，它为本发明实施例1的半导体器件。图2为表示实施例1的芯片与引线关系的平面图。
实施例1的半导体器件是一个所谓的树脂封装式半导体器件。即，半导体芯片1与起外引线作用的引线2的内引线部分一起埋在构成管壳3的树脂4当中，如环氧树脂（以下称为“封装树脂”），引线2在管壳外面的外部引线在靠近管壳3的边上向下弯曲。
在普通的树脂封装式半导体器件中，芯片与一个起安装板作用的台面相接触，台面的尺寸实质上与芯片相同，而起芯片电极作用的压焊块则通过起压焊线作用的细金属线与布置在台面外围的引线的内端部分形成电连接。
相反，在实施例1的半导体器件中，引线延伸到芯片1的背面（即不形成半导体集成电路的主要非电路形成面）。芯片靠粘结剂6与聚酰亚胺树脂的绝缘薄片5相连，该薄片与这些引线粘连在一起。在这种情况下，引线框架上没有安装芯片用的台面。绝缘薄片使引线之间达到电绝缘。在本实施例中，如果没有绝缘薄片5，引线之间就会通过导电的芯片1产生短路。为了避免短路，在芯片1和引线之间放置了该绝缘薄片5。
如图2所示，上述芯片1与引线2的位置关系是这样的，引线2a的外引线沿芯片1上不准备形成压焊块7的两边（以下，称“无压焊块形成边”）排列，引线2a的内引线在该芯片1的背面（主要的非电路形成面）延伸，而其尖端部分2b则一直从该芯片打算形成压焊块7的边上延伸出来。绝缘薄片5粘接到引线2a上，芯片1用其为主要非电路形成面的下表面与绝缘薄片5的上表面相接。
在普通的树脂封装式半导体器件中，具有在芯片1下面延伸的内引线的引线2a被封装树脂埋置的地方是这样的封装树脂区，在那里内引线（引线中被封装树脂埋置的部分）只能获得从管芯边缘到台面附近的非常有限的长度，也就是说，只能提供很短的引线。
普通的短引线通常有一个问题，即由于与封装树脂只有很小的粘接面积，其抗拉强度较低，所以引线容易从管壳上脱落。由于短引线和封装树脂间的粘接面积随着芯片尺寸的增大而减少，因此，这个问题随着芯片尺寸的增大变得严重起来。
相反，在实施例1的半导体器件中与上述短引线相应位置上提供的引线2a的内引线很长，因此与封装树脂的粘接面积很大。这样，引线和封装树脂间的粘接强度能得到大的改进。因此，即使在用大芯片的半导体器件中，也能有效地防止引线和封装树脂之间交界面处的剥离（这种剥离可能在进行弯折外引线或类似的工作时发生），这样，可以避免水从外面通过剥离部分侵入封装树脂中的芯片。因此能改善半导体器件的抗湿性。而且，由于绝缘薄片5与引线2a粘得很牢，引线2a就有很高的抗拉强度。
此外，因为热导率与散热能力比封装树脂高的金属材料引线2a在芯片1表面很大范围上与之接触，尽管接触是通过绝缘薄片5进行的，芯片在工作状态时产生的热能够通过引线直接向外散发。因此，本发明的半导体器件具有散热能力很好的结构。
除此之外，由于芯片1与引线2a的电连接是靠把芯片上的压焊块7a与分布在压焊块附近并靠近芯片边缘的导线2a的尖端部分2b用导线焊接在一起而达到的，所以压焊线8可以弄得很短。因此，可以防止互相贴近的压焊线之间，压焊线与邻近的引线之间或压焊线与芯片之间的偶然接触。换句话说，可以防止短路故障。再则，由于压焊线短而减少了导线8的总量，因此降低了成本。
实施例1中的半导体器件是易于制备的，其方法是：对预先确定好形状的引线做一个引线框架，把绝缘薄片5粘接在引线的内引线预定部位，用粘合剂把芯片1粘在绝缘薄片5上，把芯片1的压焊块与引线的键合部分用导线连结起来，再用与普通树脂封装式半导体器件生产中相同的装配步骤。在这种情况下，绝缘薄片5不仅起到防止引线间偶然短路的绝缘体的作用，而且起到在机械强度上加强引线框架的作用。
上述引线的导线键合部分可以用，例如，局部电镀方法淀积金来形成。
图3是带有绝缘薄片5的引线框架的局部平面图，薄片5事实上粘结在连接杆9以内的部分。图中没有画出的引线框架部分，如，框架部分和外引线部分，其形状与图8所示的那些部分相似。在实施例1的半导体器件中，由于绝缘薄片本身起着局部电镀掩模的作用，所以只使用一块带有一个窗口（如图3中带点部分所示）的局部电镀掩模，就能够用有良好导线键合能力的材料（如金）只在引线2的尖端部分2b处进行选择性局部电镀。所以，在进行局部镀敷时，简化了掩模制备方法，从而使键合部分的形成容易实现。
图3中，只示出沿芯片短边提供间隙的掩模。但是，使用具有沿平行于连接杆9的芯片长边提供间隙的窗口的掩模就能够容易地在所有围绕绝缘薄片5的引线上进行局部电镀。用这种方法，能够容易地制备芯片周围都具有压焊块的半导体器件。
〔实施例2〕
图4是表明本发明另一个实施例的半导体器件中芯片与引线关系的平面图。
实施例2中的半导体器件与实施例1中的不同，它没有绝缘薄片5，但采用了一个比芯片1小的台面。
准确地说，在实施例2的半导体器件中，芯片1用绝缘材料制成的粘合剂11粘在台面和引线2a的内引线上，引线2a的外引线沿着芯片的无压焊块的边排列。可用的绝缘材料粘合剂包括聚酰亚胺树脂、硅橡胶以及陶瓷。
在实施例2中，由于没有绝缘薄片5，热能够从芯片1直接散发出去。因此与实施例1相比，热阻又有所降低，因而可靠性相应地更高。
此外，由于加上了台面10，芯片的连接强度也有了保障。
图5为沿图4Ⅴ-Ⅴ面的局部剖面图，它表示出芯片1与引线2的尖端部分的电连接状态。在引线2a的尖端部分2b上做出一个凹槽2c。在用粘合剂粘连芯片1时，由于粘合剂11可能流出来弄脏键合部分12的表面，有时用导线8不能完成芯片1的压焊块7和键合部分12之间的连接。上述凹槽2c用作阻断粘合剂11流动的屏障，以避免发生键合失效。
〔实施例3〕
图6为本发明又一个实施例的半导体器件的剖面图。图7为表示上述半导体器件中芯片与引线关系的平面图。
实施例3的半导体器件与实施例1与2中的器件不同在于，内引线是在芯片的电路形成面上面延伸的。
特别是，如图6所示，芯片1借助于电路形成面上的粘合剂6连接到聚酰亚胺树脂绝缘薄片5上，该薄片5粘接在内引线的背面。在这种情况下，绝缘薄片5起到防止引线间发生偶然短路的绝缘体作用。除此之外，绝缘薄片5还起到增强引线在那里的机械强度的作用。
如图7所示，绝缘薄片5的大小不能盖过与之粘接的芯片1上的压焊块。引线2a的外引线沿芯片无压焊块的边分布，其内引线在绝缘薄片的上表面延伸。引线2a的内引线粘连在上述绝缘薄片5上，其尖端部分置于键合片的附近。
由于实施例3中的半导体器件具有焊接在芯片1的电路形成面一侧的内引线，所以它的散热能力比实施例1中的器件要优越。
聚酰亚胺绝缘薄片5用于防止半导体元件在受到外来α射线照射时失灵。也就是说，绝缘薄片5起到阻止α射线从外面侵入该器件的作用，不让半导体元件受到α射线的幅射。由于绝缘薄片覆盖在电路形成面上，也就使在α射线条件下工作的可靠性得到了改善。
在具有保护芯片1之电路形成面上的电气布线和电路部分的钝化绝缘薄膜的半导体器件中，可能不太需要防止引线间短路的绝缘薄片，或者不仅可以用绝缘材料也可以用导电材料作为粘接芯片与引线，必要时，作为粘接芯片与台面的粘接剂。
在实施例3中，引线2a的尖端部分放置在靠近压焊块7的内部位置上，它们之间的位置关系和实施例1中的情况相反。因此，焊接方向也相反。不过，焊接距离基本上与实施例1相同。
本发明的功效如下。
（1）、在树脂封装式半导体器件中，在安放于器件内的芯片的电路形成面上或在其附近，或者在该芯片的主要非电路形成面上或在其附近延伸内引线能够大大改善内引线与封装树脂的粘接力。因此，即使安放大的芯片，也能防止引线从封装树脂中脱落。
在本发明中，至少有一根引线在芯片上面或下面延伸。结果，大大改善了内引线与封装树脂的粘接力。因此，即使安放大的芯片，也能防止引线从封装树脂中脱落。
（2）、由于上述（1）中所述的同样原因，能防止在进行外引线弯折时发生引线与封装树脂间粘接面的剥离。
（3）、由于上述（1）与（2）中所述的原因，即使半导体器件的管壳很小，其中安放的芯片很大，也能提供抗湿性很好的高可靠性半导体器件。
（4）、当内引线固定在芯片的主要非电路形成面上时，工作状态下产生的热量能通过这些引线有效地向外散发。
（5）、当在上述（4）所述的器件中在芯片与内引线间安放一绝缘薄片时，能够改善芯片的连接强度。
（6）、制备一个在预定部位粘有绝缘薄片的引线框架并把芯片固定在绝缘薄片上，就能容易地形成（5）中所述结构。
（7）、由于通过把绝缘薄片粘接在引线框架的预定部位能加固引线，所以即使框架含有大量的细引线，引线框架也很容易加工。
（8）、由于引线框架具有粘连在预定部位上的绝缘薄片，而且局部电镀掩模具有一个其大小可为绝缘薄片四周或局部提供空隙的窗口，由于绝缘薄片也起到局部电镀掩模的作用，故这些技术的组合使相应于上述空隙的导线部位能容易地受到局部电镀。
（9）、内引线固定在芯片的电路形成面上，使电路在工作状态时产生的热量能更直接地通过引线散发出去。
（10）、在内引线和芯片之间提供用于阻止α射线对半导体元件辐射的绝缘薄片能保护半导体元件和包含这一元件的电路免受α射线的辐射。因此能改善半导体器件抗α射线的可靠性。
（11）、在固定于芯片电路形成面或非电路形成面上的引线的靠近芯片安放部分的地方提供凹槽或凸起，能防止用来把引线粘在芯片或与芯片连接的绝缘薄片上的粘合剂流出来沾污键合部分的表面。因此，能防止发生低劣的导线键合。
上面已用实施例对本发明者完成的发明作了具体说明。不过，本发明并不只局限于上述实施例，无需多说，本发明能够在不偏离本发明主要方法的范围内产生各种各样的变换型式。
例如，所有实施例谈到的情况都是内引线直接或间接固定在芯片的主要面上。不过，本发明并不只限于这种情况、全部或部分内引线可以在电路形成面或主要非电路形成面附近延伸。
所有实施例涉及的情况中引线只在与所谓短引线位置相应的芯片一侧延伸。然而，本发明不只限于这种情况，它还包括具有长的内引线的引线在普通半导体器件中延伸的情况。绝缘薄片不只限于聚酰亚胺一种，还可以是一种硅橡胶。当然，还可以把象碳化硅（Sic）粉这样的填料加进粘合剂和/或绝缘薄片，以便改进散热能力。
在实施例1和3中，可以不一定使用绝缘薄片。相反，实施例2可以用绝缘薄片。
防止引线粘合剂象实施例2中所说的那样外流的屏障也不只限于凹槽，还可以用突起部分达到屏障的作用。这种屏障当然也可以在实施例1和3中使用。
以上的说明主要涉及到本发明应用于所谓DIP（双列直插塑料）式半导体器件，这种器件与作为本发明背景的应用领域有关。不过，本发明不只限于这种器件。本发明的技术能有效地应用于具有各种形式的管壳结构的半导体器件，例如扁平管壳结构，只要管壳是用树脂封装的。

Claims (24)

1、一种树脂封装的半导体器件，它包括在芯片的背面或主要非电路面上伸展出的导线。
2、如权利要求1所述的半导体器件，其中提供了一个比上述芯片小的台面。
3、如权利要求1所述的半导体器件，其中没有台面。
4、如权利要求1所述的半导体器件，其中上述芯片通过由绝缘材料构成的粘接剂，与一根或多根引线和一个台面相连接。
5、如权利要求1所述的半导体器件，其中上述芯片与一绝缘薄片粘连，该绝缘薄片与上述引线和台面粘连。
6、如权利要求1所述的半导体器件，其中上述芯片借助于由绝缘材料构成的粘接剂与上述引线粘连。
7、如权利要求1所述的半导体器件，其中，上述芯片与绝缘薄片粘连，该薄片与一根或多根引线相连接。
8、如权利要求1所述的半导体器件，其中，在上述导线靠近压焊线的连接区的地方具有凹槽或突起。
9、一种树脂封装的半导体器件，它包括在或靠近芯片正面或电路形成面上延伸的引线。
10、如权利要求9所述的半导体器件，其中，有一个比上述芯片小的台面。
11、如权利要求9所述的半导体器件，其中没有台面。
12、如权利要求9所述的半导体器件，其中借助于一种粘接剂把上述芯片粘到上述引线和薄片上。
13、如权利要求9所述的半导体器件，其中上述芯片被粘在一个绝缘薄片上，该薄片与一根或多根引线以及一个台面粘连。
14、如权利要求9所述的半导体器件，其中上述芯片用粘结剂粘到上述引线上。
15、如权利要求9所述的半导体器件，其中上述芯片被粘在一个绝缘薄片上，该薄片与一根或多根引线粘连。
16、如权利要求9所述的半导体器件，其中，在上述导线靠近压焊线的连接区的地方具有凹槽或突起。
17、生产半导体器件的一种方法，其中包括制备引线框架的步骤，用粘结剂把上述引线框架的一根或多根引线固定在绝缘片上的步骤，用粘结剂把芯片粘在上述绝缘片上的步骤，用导线把上述芯片上的压焊块和上述一根或多根引线相连以实现它们之间的电连接的步骤，以及用树脂封装上述芯片及上述导线的步骤。
18、生产如权利要求17所述的半导体器件的方法，其中上述绝缘片与上述芯片的背面或主要非电路形成面用粘结剂粘在一起。
19、生产半导体器件的一种方法，其中包括制备引线框架的步骤，用绝缘材料粘结剂把芯片与上述引线框架的一根或多根引线固定在一起的步骤，将上述芯片上的压焊块用导线与上述一根或多根引线连接起来，以实现它们之间的电连接的步骤，以及用树脂封装上述芯片和上述导线的步骤。
20、生产如权利要求19所述的半导体器件的方法，其中，用上述用于芯片背面或主要非电路形成面上的粘结剂固定上述芯片。
21、树脂封装半导体器件生产中用的引线框架，此框架包括大量引线，其中有一根或多根引线在芯片安放区之上或以下延伸。
22、如权利要求21所述的引线框架，其中具有安装上述芯片用的台面。
23、如权利要求21所述的引线框架，其中没有安装上述芯片用的台面。
24、如权利要求21所述的引线框架，其中，在上述芯片安放部分上或在该部分下面伸展出的一根或多根引线在导线键合区与上述芯片安放区之间的引线部分有凹槽或突起。
CN198686101795A 1985-03-25 1986-03-19 半导体器件及其生产方法，以及上述工艺所用的引线框架 Pending CN86101795A (zh)

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CN1147151A (zh) 1997-04-09
JPS61218139A (ja) 1986-09-27
CN1043828A (zh) 1990-07-11
KR940010546B1 (ko) 1994-10-24
JPH06105721B2 (ja) 1994-12-21
US4943843A (en) 1990-07-24
US5126821A (en) 1992-06-30
KR860007735A (ko) 1986-10-17

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