CN1983574A - 半导体器件以及半导体器件的树脂密封用模具 - Google Patents
半导体器件以及半导体器件的树脂密封用模具 Download PDFInfo
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- CN1983574A CN1983574A CNA2006101640903A CN200610164090A CN1983574A CN 1983574 A CN1983574 A CN 1983574A CN A2006101640903 A CNA2006101640903 A CN A2006101640903A CN 200610164090 A CN200610164090 A CN 200610164090A CN 1983574 A CN1983574 A CN 1983574A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 229920005989 resin Polymers 0.000 claims abstract description 132
- 239000011347 resin Substances 0.000 claims abstract description 132
- 239000000945 filler Substances 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 abstract 4
- 238000005452 bending Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000009740 moulding (composite fabrication) Methods 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 241000218202 Coptis Species 0.000 description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
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- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
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- 230000004888 barrier function Effects 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
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- 238000001816 cooling Methods 0.000 description 2
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
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Abstract
提供在处理大电流,并具有配置在框架的芯片焊盘背面的树脂片的半导体器件中,可以一面确保较高的绝缘性,一面有效地将在功率芯片上产生的热散发到外部的半导体器件以及该半导体器件的树脂密封用模具。具备功率芯片(5)、IC芯片(7)、具有在表面上搭载功率芯片(5)的芯片焊盘(1a)以及IC芯片(7)的搭载部的弯曲框架(1)、以一个面密接在芯片焊盘(1a)的背面上的方式设置的树脂片(3)、以树脂片(3)的另一个面露出的方式将功率芯片(5)、IC芯片(7)、芯片焊盘(1a)以及树脂片(3)模塑的模塑树脂(2),在模塑树脂(2)的与树脂片(3)的露出面相反一侧的面上,具有沿着与模塑树脂(2)的树脂注入口垂直,并且与所述树脂片平行的方向延伸的槽(10)。
Description
技术领域
本发明涉及具备具有芯片焊盘的框架、搭载在具有芯片焊盘的框架上的IC芯片、搭载在具有芯片焊盘的框架上的功率芯片、配置在芯片焊盘背面上的用于确保绝缘性的树脂片、和密封整体的模塑树脂的半导体器件以及该半导体器件的树脂密封用模具。
背景技术
半导体器件通过经由在框架上将功率芯片以及IC芯片进行芯片焊接,然后在将功率芯片以及IC芯片和框架进行引线接合之后,将整体进行树脂模塑的工序等形成。
引线接合以如下的方式进行。
功率芯片和框架用采用了铝线的引线接合法连接。同样地,IC芯片和框架用采用了金线的引线接合法连接。由于半导体器件因处理大电流而从功率芯片产生热,因此必须有高散热性,同时必须满足高绝缘性。
例如,如专利文献1所记载的那样,为了确保高绝缘性,在芯片焊盘背面配置具有一定厚度以上的绝缘层、且形成该绝缘层的树脂的导热性比模塑树脂的导热系数高的、具有第1面和第2面的树脂片,并用模塑树脂将整体密封。
如果不能确保芯片焊盘、和配置在芯片焊盘背面的树脂片的密接性,就不会实现高散热性和高绝缘性。于是,在以往技术中,在传递模塑成型的树脂模塑的工序中,通过利用配置在树脂密封用模具上的固定销的加压,将芯片焊盘向树脂片按压的程序,确保实现芯片焊盘和树脂片的密接性。
专利文献1:特开2005-123495号公报(第5页-第7页,图3-图6)
在处理大电流的半导体器件中,在如以往那样用固定销将芯片焊盘向树脂片按压的程序中,存在将固定销加压的装置大型化的问题。
另外,由于芯片焊盘的厚度变厚,刚性变大,因此存在为了通过固定销使芯片焊盘密接在树脂片上,而必须有将固定销加压的大型的装置的问题。
发明内容
本发明是解决上述问题的发明,其目的在于提供在处理大电流,并具有配置在框架的芯片焊盘背面的树脂片的半导体器件中,可以既能够确保较高的绝缘性,又能够有效地将在功率芯片上产生的热散发到外部的半导体器件以及该半导体器件的树脂密封用模具。
本发明的半导体器件,是具备半导体芯片,在表面上搭载所述半导体芯片的芯片焊盘,以一个面密接在所述芯片焊盘的背面上的方式设置的绝缘性的树脂片,以所述树脂片的另一个面露出的方式从树脂注入口注入树脂,从而将所述半导体芯片、所述芯片焊盘以及所述树脂片模塑的模塑树脂,并且在所述模塑树脂的与所述树脂片的露出面相反一侧的面上,具有沿着与所述树脂注入口垂直,并且与所述树脂片平行的方向延伸的槽的半导体器件。
另外,本发明的半导体器件的树脂密封用模具,由具有内腔的上部模具和下部模具构成,在所述下部模具的内部底面上配置了绝缘性的树脂片,在所述树脂片的上面配置在表面上搭载了半导体芯片的芯片焊盘,然后通过向所述内腔内注入模塑树脂进行树脂密封,具备用于从所述树脂密封用模具的侧方向所述内腔内注入所述模塑树脂的树脂注入口,并在所述上部模具的内部上面具有沿着垂直于所述树脂注入口的方向延伸的凸部。
按照本发明的半导体器件以及该半导体器件的树脂密封用模具,由于在注入树脂时对芯片焊盘的整体加压,因此可以确保芯片焊盘与树脂片的高密接性及高绝缘性,而且可以降低半导体器件的成本。
附图说明
图1是展示本发明的半导体器件的实施方式1的立体图。
图2是图1的II-II剖面图。
图3是图1的仰视图。
图4是展示采用了本实施方式1的树脂密封用模具的半导体器件的制造工序的剖面图。
图5是展示采用了本实施方式1的树脂密封用模具的半导体器件的制造工序的剖面图。
图6是展示采用了本实施方式1的树脂密封用模具的半导体器件的制造工序的剖面图。
图7是展示本发明的半导体器件的实施方式1的另一例的剖面图。
图8是展示本发明的半导体器件的实施方式2的平面图。
图9是展示本发明的半导体器件的实施方式3的剖面图。
图10是展示本发明的半导体器件的实施方式4的剖面图。
图11是展示本发明的半导体器件的实施方式5的剖面图。
标号说明
1 弯曲框架 1a芯片焊盘
1b阶梯部 1c端子
2模塑树脂 3树脂片
4金属箔 5功率芯片
6铝线 7IC芯片
8金线 10槽
11固定销孔痕迹 12树脂注入口
20模具 21上模具
22下模具 23凸部
24内腔 100半导体器件
具体实施方式
实施方式1
图1是展示本发明的半导体器件的实施方式1的立体图,图2是图1的II-II剖面图,图3是图1的仰视图,图4、图5以及图6是展示采用了本实施方式1的树脂密封用模具的半导体器件的制造工序的剖面图,图7是展示本发明的半导体器件的实施方式1的另一例的剖面图。
如图1所示,半导体器件100由树脂模塑封装结构构成,包括在两侧设置多个金属制的弯曲框架1的模塑树脂2。模塑树脂2最好由环氧树脂构成。
如图2所示,半导体器件100包括弯曲框架1。在弯曲框架1上载置有像逻辑芯片那样的IC芯片7。另外,弯曲框架1包括芯片焊盘部1a和阶梯部1b,在芯片焊盘部1a之上搭载有像IGBT和FWDiode那样的功率芯片5。
功率芯片5以及IC芯片7和弯曲框架1之间,例如,用由金或铝构成的接合线6、8连接在一起,由IC芯片7控制功率芯片5的动作。功率芯片5和IC芯片7根据半导体器件100的功能设置多个。
模塑树脂2,例如,包括在背面安装了由铜构成的金属箔4的绝缘性的树脂片3,并具备如图1所示那样沿着弯曲框架1的多个端子1c排列的方向延伸的槽10,如图3所示,金属箔4从模塑树脂2的背面露出。槽10的延伸方向,如后述,设为与传递模塑成型时的模塑树脂2的树脂注入口垂直的方向。
在树脂片3方面最好采用含有填充剂的环氧树脂。填充剂设为由从SiO2、Al2O3、AlN、Si3N4、以及BN中选择的一个或多个构成。树脂片3的导热系数比模塑树脂2的导热系数大。再者,如图7所示,也可以不用金属箔4而只用树脂片3。
弯曲框架1以芯片焊盘1a的背面与树脂片3的上面直接相接的方式用模塑树脂2掩埋固定。这样,在半导体器件100中,由于在芯片焊盘1a的背面和树脂片3的上面之间没有夹着模塑树脂2等,芯片焊盘1a和树脂片3直接相接触,因此从芯片焊盘1a到树脂片3的导热性变好。因此,可以提高安装在芯片焊盘1a的上面上的功率芯片5的散热特性。
其次,参照图4以及图5说明以下采用了树脂密封用模具20的半导体器件100的制造方法。
工序1:如图4(a)所示,例如,准备由铜构成的弯曲框架1。接着,用焊锡或银膏等分别在弯曲框架1上的一方上固定IC芯片7,在弯曲框架1的芯片焊盘1a之上固定功率芯片5。
工序2:如图4(b)所示,用铝的接合线将功率芯片5相互之间、功率芯片5和弯曲框架1、弯曲框架1相互之间连接在一起(铝引线接合工序)。再者,接合线6也可以采用以铝为主要成分的合金或其他的金属。
工序3:如图4(c)所示,用金的接合线8将IC芯片7和框架1连接在一起(金引线接合工序)。再者,接合线8也可以采用以金为主要成分的合金或其他的金属。
在图4的说明中,IC芯片7和功率芯片5经由框架连接在一起,但也可以将IC芯片7和功率芯片5直接连接在一起。进而,还可以代替接合线6、8而用金属板连接。
工序4:如图4(d)所示,准备树脂密封用模具20。树脂密封用模具20以分成具有内腔24的上部模具21和下部模具22的方式构成。另外,具有用于从树脂密封用模具20的侧方向内腔24内注入树脂的树脂注入口12。在上部模具21的内部上面,以沿着与树脂注入口12(参照图5(f))垂直的方向(与纸面垂直的方向)延伸的方式设有用于形成槽10(参照图1以及图2)的凸部23。
接着,准备在背面安装了金属箔4的绝缘性的树脂片3,并配置在树脂密封用模具20的内部的规定的位置上。这时,以树脂片3所包括的金属箔4的背面与下部模具22的内部底面相接的方式配置树脂片3。
工序5:如图5(e)所示,将安装了功率芯片5等的弯曲框架1配置在树脂密封用模具20内部的规定的位置上。这时,以弯曲框架1的芯片焊盘1a的背面与树脂片3的上面相接的方式配置弯曲框架1。
再者,在工序5中,说明了在下部模具22上首先配置树脂片3,接着在树脂片3上配置安装了功率芯片5等的弯曲框架1的情况,但也可以预先将安装了功率芯片5等的弯曲框架1临时固定在树脂片3之上,之后,将树脂片3配置在下部模具22上。
工序6:如图5(f)所示,在下部模具22上安装固定上部模具21。这时,以形成槽10的凸部23不会压住线和功率芯片5、IC芯片7的方式配置。
接着,通过传递模塑成型法,例如,从设在树脂密封用模具20上的树脂注入口12,将由环氧树脂构成的模塑树脂2填充在树脂密封用模具20的内腔24内。
如图6(a)所示,从树脂注入口12注入的模塑树脂2,向图中箭头的方向流动,因此从靠近树脂注入口12一侧顺次填充内腔24内。
进而,当向树脂密封用模具20内的树脂填充进行时,如图6(b)所示,模塑树脂2由于沿着与树脂注入口12垂直的方向延伸的凸部23而改变其流动的方向。如图中箭头所示,是图中向下的流动,即,是向将芯片焊盘1a向树脂片3按压的方向的流动。其结果,芯片焊盘1a被有选择地向树脂片3加压,因此能够可靠地确保芯片焊盘1a和树脂片3的良好的密接性。
另一方面,如果在上部模具21上没有凸部23,则模塑树脂2的流动是从注入口平行地流动,因此得不到有选择地、可靠地将芯片焊盘1a向树脂片3按压的模塑树脂2的流动,其结果,芯片焊盘1a和树脂片3的密接的程度有可能不够。
与此相对,根据本实施方式1,如所述,由于可以有选择地、可靠地将芯片焊盘1a向树脂片3按压,因此假设在树脂密封用模具20的内腔24内设置树脂片3、弯曲框架1时,在芯片焊盘1a和树脂片3之间因尺寸公差的关系等而出现些许的间隙,也具有可靠地使芯片焊盘1a和树脂片3密接的效果。
工序7:如图5(g)所示,在从树脂密封用模具20取出整体后,进行用于使模塑树脂2完全硬化的二次硬化、连接杆等框架多余部分的切断等。进而,通过进行弯曲框架(外部端子)1的成型,完成图1所示的半导体器件100。
功率芯片、IC芯片可以是单个也可以是多个,铝线和金线不是特定材料的线,例如,也可以是由以铝或金为主要成分的合金、铜等铝和金以外的金属构成的线。
实施方式2
图8是展示本发明的半导体器件的实施方式2的平面图。在本实施方式2的半导体器件中,槽10的位置在模塑树脂2的上方与树脂片3的面投影区域重合,并且配置在与配置槽10的模塑树脂2的上面的中央相比,更靠近树脂注入口12的位置上。另外,如果参照展示采用了实施方式1的树脂密封用模具的半导体器件的制造工序的图4~6,说明本实施方式的半导体器件的树脂密封用模具,就是该树脂密封用模具20将凸部23的配置部位,设在与配置在下部模具22的内部底面上的树脂片3的面投影区域重合,并且比上部模具21的内部上面的中央更靠近树脂注入口12的位置。
根据本实施方式2,在传递模塑成型时,由于模塑树脂2有效地产生了将芯片焊盘1a向树脂片3按压的加压力,因此具有更可靠地使芯片焊盘1a和树脂片3之间密接的效果。
实施方式3
图9是展示本发明的半导体器件的实施方式3的剖面图。在本实施方式3的半导体器件中,槽10是模塑树脂2的开口部的宽度比槽10的底部的宽度大的锥形,其角度最好是相对于与弯曲框架1垂直的方向呈15~45°倾斜的角度。另外,如果参照展示采用了实施方式1的树脂密封用模具的半导体器件的制造工序的图4~6,说明本实施方式的半导体器件的树脂密封用模具,就是该树脂密封用模具20将凸部23的形状形成为根部的宽度比前端部的宽度大的锥形。
根据本实施方式3,在传递模塑成型时,由于模塑树脂2将芯片焊盘1a向树脂片3按压的加压力在较大的范围内有效地起作用,因此具有更可靠地使芯片焊盘1a和树脂片3之间密接的效果。
实施方式4
图10是展示本发明的半导体器件的实施方式4的剖面图。在本实施方式4的半导体器件中,槽10的底部成R形状。另外,如果参照展示采用了实施方式1的树脂密封用模具的半导体器件的制造工序的图4~6,说明本实施方式的半导体器件的树脂密封用模具,就是该树脂密封用模具20将凸部23的前端部设为R形状。
根据本实施方式4,可以减少传递模塑成型时所使用的树脂密封用模具20的用于形成槽的凸部因模塑树脂2的流动而损耗的情况,延长模具零件的寿命,使制造装置变得便宜。
实施方式5
图11是展示本发明的半导体器件的实施方式5的剖面图。在本实施方式5的半导体器件中,在槽10的底部具有一个或多个插入了直径小于槽10的宽度的固定销的固定销孔痕迹11。另外,如果参照展示采用了实施方式1的树脂密封用模具的半导体器件的制造工序的图4~6,说明本实施方式的半导体器件的树脂密封用模具,就是该树脂密封用模具20在凸部23的前端部具备一个或多个直径小于前端部的宽度的固定销,在模塑树脂注入时由固定销按压芯片焊盘。
根据本实施方式5,通过在传递模塑成型时使用固定销,具有更可靠地使芯片焊盘1a和树脂片3之间密接的效果。
Claims (7)
1.一种半导体器件,具备:半导体芯片;在表面上搭载所述半导体芯片的芯片焊盘;以一个面密接在所述芯片焊盘的背面上的方式设置的绝缘性的树脂片;以所述树脂片的另一个面露出的方式从树脂注入口注入树脂、从而将所述半导体芯片、所述芯片焊盘以及所述树脂片模塑的模塑树脂,其特征在于,
在所述模塑树脂的与所述树脂片的露出面相反一侧的面上,具有沿着与所述树脂注入口垂直、并且与所述树脂片平行的方向延伸的槽。
2.如权利要求1所述的半导体器件,其特征在于,所述槽的配置部位是与所述树脂片的面投影区域重合、并且比配置所述槽的所述模塑树脂面的中央更靠近所述树脂注入口的位置。
3.如权利要求1所述的半导体器件,其特征在于,所述槽被形成为所述槽的开口宽度比所述槽的底部的宽度大的锥形。
4.如权利要求1所述的半导体器件,其特征在于,所述槽的底部是R形状。
5.如权利要求1所述的半导体器件,其特征在于,在所述槽的底部具有作为插入直径小于所述槽的宽度的固定销的痕迹的固定销孔痕迹。
6.一种半导体器件的树脂密封用模具,由具有内腔的上部模具和下部模具构成,在所述下部模具的内部底面上配置绝缘性的树脂片,在所述树脂片的上面配置在表面上搭载了半导体芯片的芯片焊盘,然后通过向所述内腔内注入模塑树脂进行树脂密封,其特征在于,
具备用于从所述树脂密封用模具的侧方向所述内腔内注入所述模塑树脂的树脂注入口,在所述上部模具的内部上面具有沿着垂直于所述树脂注入口的方向延伸的凸部。
7.如权利要求6所述的半导体器件的树脂密封用模具,其特征在于,
所述凸部的配置部位是与所述树脂片的面投影区域重合、并且比配置所述凸部的所述上部模具的内部上面的中央更靠近所述树脂注入口的位置。
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Application Number | Priority Date | Filing Date | Title |
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JP2005357171A JP4422094B2 (ja) | 2005-12-12 | 2005-12-12 | 半導体装置 |
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2005
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CN106463420B (zh) * | 2014-05-12 | 2019-07-26 | 三菱电机株式会社 | 电力用半导体装置及其制造方法 |
CN106463417A (zh) * | 2014-05-14 | 2017-02-22 | 三菱电机株式会社 | 半导体装置的制造方法 |
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JP4422094B2 (ja) | 2010-02-24 |
CN101980357B (zh) | 2013-05-01 |
JP2007165425A (ja) | 2007-06-28 |
KR20070062413A (ko) | 2007-06-15 |
US20070132112A1 (en) | 2007-06-14 |
KR100850147B1 (ko) | 2008-08-04 |
US7808085B2 (en) | 2010-10-05 |
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