CN1913104A - 氮化物系半导体元件的制造方法 - Google Patents
氮化物系半导体元件的制造方法 Download PDFInfo
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- CN1913104A CN1913104A CNA2006100959057A CN200610095905A CN1913104A CN 1913104 A CN1913104 A CN 1913104A CN A2006100959057 A CNA2006100959057 A CN A2006100959057A CN 200610095905 A CN200610095905 A CN 200610095905A CN 1913104 A CN1913104 A CN 1913104A
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- semiconductor layer
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- lateral electrode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 190
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 107
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910052984 zinc sulfide Inorganic materials 0.000 claims abstract description 17
- 238000000227 grinding Methods 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 94
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 47
- 238000005530 etching Methods 0.000 abstract description 5
- 238000007599 discharging Methods 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 98
- 239000007789 gas Substances 0.000 description 35
- 239000013078 crystal Substances 0.000 description 32
- 230000007547 defect Effects 0.000 description 31
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- 239000011248 coating agent Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- 238000010306 acid treatment Methods 0.000 description 9
- 150000003839 salts Chemical class 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 229910017083 AlN Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 108091006149 Electron carriers Proteins 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
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- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 239000005864 Sulphur Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
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- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
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- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
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- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 230000005669 field effect Effects 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
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- 238000001259 photo etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
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- Crystals, And After-Treatments Of Crystals (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
试样 | 电极形成方法(背面处理条件) | 接触电阻值(Ωcm2) | 电子载体浓度(cm-3) |
1 | GaN基板背面研磨→n侧电极形成 | 20 | 2.0×1016 |
2 | GaN基板背面研磨→盐酸处理→n侧电极形成 | 0.1 | 5.0×1016 |
3 | GaN基板背面研磨→用RIE法(Cl2气)浸蚀0.5μm→n侧电极形成 | 0.05 | 1.0×1017 |
4 | GaN基板背面研磨→用RIE法(Cl2气)浸蚀1μm→n侧电极形成 | 7.0×10-4 | 7.1×1017 |
5 | GaN基板背面研磨→用RIE法(Cl2+BCl3气)浸蚀1μm→n侧电极形成 | 3.0×10-4 | 1.7×1018 |
6 | GaN基板背面研磨→用RIE法(Cl2+BCl3气)浸蚀1μm→盐酸处理→n侧电极形成 | 2.0×10-4 | 2.5×1018 |
7 | GaN基板背面研磨→用RIE法(Cl2+BCl3气)浸蚀1μm→盐酸处理→n侧电极形成→热处理 | 1.0×10-5 | 5.0×1018 |
Claims (6)
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JP2002085085 | 2002-03-26 | ||
JP200285085 | 2002-03-26 | ||
JP2002-85085 | 2002-03-26 |
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CNB031088279A Division CN1271766C (zh) | 2002-03-26 | 2003-03-26 | 氮化物系半导体元件及其制造方法 |
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CN1913104A true CN1913104A (zh) | 2007-02-14 |
CN1913104B CN1913104B (zh) | 2010-05-12 |
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CN2006100959057A Expired - Lifetime CN1913104B (zh) | 2002-03-26 | 2003-03-26 | 氮化物系半导体元件的制造方法 |
CNB2005101286986A Expired - Lifetime CN100448039C (zh) | 2002-03-26 | 2003-03-26 | 氮化物系半导体元件 |
CNB031088279A Expired - Lifetime CN1271766C (zh) | 2002-03-26 | 2003-03-26 | 氮化物系半导体元件及其制造方法 |
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CNB2005101286986A Expired - Lifetime CN100448039C (zh) | 2002-03-26 | 2003-03-26 | 氮化物系半导体元件 |
CNB031088279A Expired - Lifetime CN1271766C (zh) | 2002-03-26 | 2003-03-26 | 氮化物系半导体元件及其制造方法 |
Country Status (3)
Country | Link |
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US (9) | US6791120B2 (zh) |
JP (5) | JP4180107B2 (zh) |
CN (3) | CN1913104B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102136435A (zh) * | 2010-04-08 | 2011-07-27 | 上海卓骋电子科技有限公司 | 高性能半导体结构的制造方法 |
CN112186495A (zh) * | 2019-07-03 | 2021-01-05 | 松下知识产权经营株式会社 | Iii族氮化物系半导体激光元件 |
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Cited By (3)
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CN102136435A (zh) * | 2010-04-08 | 2011-07-27 | 上海卓骋电子科技有限公司 | 高性能半导体结构的制造方法 |
CN102136435B (zh) * | 2010-04-08 | 2013-05-15 | 上海卓骋电子科技有限公司 | 高性能半导体结构的制造方法 |
CN112186495A (zh) * | 2019-07-03 | 2021-01-05 | 松下知识产权经营株式会社 | Iii族氮化物系半导体激光元件 |
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JP4180107B2 (ja) | 2008-11-12 |
JP5025540B2 (ja) | 2012-09-12 |
US20070077669A1 (en) | 2007-04-05 |
US7655484B2 (en) | 2010-02-02 |
US20080315221A1 (en) | 2008-12-25 |
JP2008160166A (ja) | 2008-07-10 |
CN1797803A (zh) | 2006-07-05 |
CN1271766C (zh) | 2006-08-23 |
US20080179601A1 (en) | 2008-07-31 |
JP2013243400A (ja) | 2013-12-05 |
JP2008211228A (ja) | 2008-09-11 |
US7629623B2 (en) | 2009-12-08 |
JP2008160167A (ja) | 2008-07-10 |
CN1447485A (zh) | 2003-10-08 |
US20080067541A1 (en) | 2008-03-20 |
US6890779B2 (en) | 2005-05-10 |
JP2012028812A (ja) | 2012-02-09 |
US20080069162A1 (en) | 2008-03-20 |
CN100448039C (zh) | 2008-12-31 |
US20050191775A1 (en) | 2005-09-01 |
US6791120B2 (en) | 2004-09-14 |
CN1913104B (zh) | 2010-05-12 |
US20070235750A1 (en) | 2007-10-11 |
US20050029539A1 (en) | 2005-02-10 |
US20040012032A1 (en) | 2004-01-22 |
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