CN1868069A - 用于减少短沟道效应的凹陷沟道快闪架构 - Google Patents
用于减少短沟道效应的凹陷沟道快闪架构 Download PDFInfo
- Publication number
- CN1868069A CN1868069A CNA2004800297243A CN200480029724A CN1868069A CN 1868069 A CN1868069 A CN 1868069A CN A2004800297243 A CNA2004800297243 A CN A2004800297243A CN 200480029724 A CN200480029724 A CN 200480029724A CN 1868069 A CN1868069 A CN 1868069A
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- 230000000694 effects Effects 0.000 title abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 71
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 36
- 238000005516 engineering process Methods 0.000 description 23
- 239000000377 silicon dioxide Substances 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 17
- 235000012239 silicon dioxide Nutrition 0.000 description 15
- 238000012545 processing Methods 0.000 description 13
- 230000005669 field effect Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 9
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 8
- 238000012163 sequencing technique Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000005381 potential energy Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 235000019994 cava Nutrition 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42336—Gate electrodes for transistors with a floating gate with one gate at least partly formed in a trench
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/683,649 US6965143B2 (en) | 2003-10-10 | 2003-10-10 | Recess channel flash architecture for reduced short channel effect |
US10/683,649 | 2003-10-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1868069A true CN1868069A (zh) | 2006-11-22 |
Family
ID=34422788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2004800297243A Pending CN1868069A (zh) | 2003-10-10 | 2004-09-16 | 用于减少短沟道效应的凹陷沟道快闪架构 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6965143B2 (zh) |
JP (1) | JP5806439B2 (zh) |
KR (1) | KR101097416B1 (zh) |
CN (1) | CN1868069A (zh) |
DE (1) | DE112004001922B4 (zh) |
GB (1) | GB2422955B (zh) |
TW (1) | TWI359461B (zh) |
WO (1) | WO2005038933A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101728252B (zh) * | 2008-10-24 | 2011-10-05 | 中芯国际集成电路制造(上海)有限公司 | 形成快闪存储器栅极的方法以及快闪存储器 |
CN101308867B (zh) * | 2007-05-17 | 2012-07-18 | 三星电子株式会社 | 存储装置及其制造方法和操作方法 |
CN102738209A (zh) * | 2011-04-06 | 2012-10-17 | 旺宏电子股份有限公司 | 半导体元件及其制造方法 |
WO2021092944A1 (zh) * | 2019-11-15 | 2021-05-20 | 江苏时代全芯存储科技股份有限公司 | 场效晶体管结构及其制造方法 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100593599B1 (ko) * | 2003-12-30 | 2006-06-28 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
JP4619190B2 (ja) * | 2005-04-28 | 2011-01-26 | ルネサスエレクトロニクス株式会社 | プログラム可能な不揮発性メモリ |
KR100649974B1 (ko) * | 2005-11-30 | 2006-11-27 | 주식회사 하이닉스반도체 | 리세스드 플로팅게이트를 구비한 플래시메모리소자 및 그의제조 방법 |
EP2118268B1 (en) * | 2007-01-10 | 2015-07-08 | Hemoshear, LLC | Use of an in vitro hemodynamic endothelial/smooth muscle cell co-culture model to identify new therapeutic targets for vascular disease |
KR100869745B1 (ko) * | 2007-06-01 | 2008-11-21 | 주식회사 동부하이텍 | 반도체소자 및 그의 제조 방법 |
EP2320454A1 (en) * | 2009-11-05 | 2011-05-11 | S.O.I.Tec Silicon on Insulator Technologies | Substrate holder and clipping device |
FR2953636B1 (fr) * | 2009-12-08 | 2012-02-10 | Soitec Silicon On Insulator | Procede de commande d'une cellule memoire dram sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante |
FR2953641B1 (fr) * | 2009-12-08 | 2012-02-10 | S O I Tec Silicon On Insulator Tech | Circuit de transistors homogenes sur seoi avec grille de controle arriere enterree sous la couche isolante |
FR2957193B1 (fr) | 2010-03-03 | 2012-04-20 | Soitec Silicon On Insulator | Cellule a chemin de donnees sur substrat seoi avec grille de controle arriere enterree sous la couche isolante |
US8508289B2 (en) * | 2009-12-08 | 2013-08-13 | Soitec | Data-path cell on an SeOI substrate with a back control gate beneath the insulating layer |
FR2953643B1 (fr) * | 2009-12-08 | 2012-07-27 | Soitec Silicon On Insulator | Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante |
FR2955200B1 (fr) | 2010-01-14 | 2012-07-20 | Soitec Silicon On Insulator | Dispositif, et son procede de fabrication, disposant d'un contact entre regions semi-conductrices a travers une couche isolante enterree |
FR2955204B1 (fr) * | 2010-01-14 | 2012-07-20 | Soitec Silicon On Insulator | Cellule memoire dram disposant d'un injecteur bipolaire vertical |
FR2955195B1 (fr) * | 2010-01-14 | 2012-03-09 | Soitec Silicon On Insulator | Dispositif de comparaison de donnees dans une memoire adressable par contenu sur seoi |
FR2955203B1 (fr) | 2010-01-14 | 2012-03-23 | Soitec Silicon On Insulator | Cellule memoire dont le canal traverse une couche dielectrique enterree |
FR2957186B1 (fr) * | 2010-03-08 | 2012-09-28 | Soitec Silicon On Insulator | Cellule memoire de type sram |
FR2957449B1 (fr) * | 2010-03-11 | 2022-07-15 | S O I Tec Silicon On Insulator Tech | Micro-amplificateur de lecture pour memoire |
FR2958441B1 (fr) | 2010-04-02 | 2012-07-13 | Soitec Silicon On Insulator | Circuit pseudo-inverseur sur seoi |
EP2375442A1 (en) | 2010-04-06 | 2011-10-12 | S.O.I.Tec Silicon on Insulator Technologies | Method for manufacturing a semiconductor substrate |
EP2381470B1 (en) | 2010-04-22 | 2012-08-22 | Soitec | Semiconductor device comprising a field-effect transistor in a silicon-on-insulator structure |
US8471328B2 (en) * | 2010-07-26 | 2013-06-25 | United Microelectronics Corp. | Non-volatile memory and manufacturing method thereof |
KR102616134B1 (ko) * | 2016-02-26 | 2023-12-21 | 에스케이하이닉스 주식회사 | 강유전체를 포함하는 비휘발성 메모리 장치 및 그 제조방법 |
KR102616129B1 (ko) * | 2016-02-26 | 2023-12-21 | 에스케이하이닉스 주식회사 | 멀티 레벨 강유전체 메모리 장치 및 그 제조방법 |
US10504913B2 (en) * | 2016-11-28 | 2019-12-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing embedded non-volatile memory |
CN110010606B (zh) | 2018-01-05 | 2023-04-07 | 硅存储技术公司 | 衬底沟槽中具有浮栅的双位非易失性存储器单元 |
WO2019135813A1 (en) * | 2018-01-05 | 2019-07-11 | Silicon Storage Technology, Inc. | Twin bit non-volatile memory cells with floating gates in substrate trenches |
Family Cites Families (17)
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US4256514A (en) | 1978-11-03 | 1981-03-17 | International Business Machines Corporation | Method for forming a narrow dimensioned region on a body |
JP3381863B2 (ja) * | 1993-06-04 | 2003-03-04 | ソニー株式会社 | Nor型フラッシュメモリ |
JPH0818042A (ja) * | 1994-06-30 | 1996-01-19 | Sony Corp | Mosトランジスタの製造方法 |
KR0166840B1 (ko) * | 1995-05-12 | 1999-01-15 | 문정환 | 리세스 채널 구조를 갖는 반도체 소자 및 그의 제조방법 |
DE19600423C2 (de) * | 1996-01-08 | 2001-07-05 | Siemens Ag | Elektrisch programmierbare Speicherzellenanordnung und Verfahren zu deren Herstellung |
JPH09330988A (ja) * | 1996-06-11 | 1997-12-22 | Sony Corp | 積層ゲート型不揮発性半導体記憶装置 |
US5990515A (en) * | 1998-03-30 | 1999-11-23 | Advanced Micro Devices, Inc. | Trenched gate non-volatile semiconductor device and method with corner doping and sidewall doping |
US6147377A (en) * | 1998-03-30 | 2000-11-14 | Advanced Micro Devices, Inc. | Fully recessed semiconductor device |
US6153467A (en) * | 1998-06-03 | 2000-11-28 | Texas Instruments - Acer Incorporated | Method of fabricating high density buried bit line flash EEPROM memory cell with a shallow trench floating gate |
US6137132A (en) * | 1998-06-30 | 2000-10-24 | Acer Semiconductor Manufacturing Inc. | High density buried bit line flash EEPROM memory cell with a shallow trench floating gate |
WO2002015276A2 (de) * | 2000-08-11 | 2002-02-21 | Infineon Technologies Ag | Speicherzelle, speicherzellenanordnung und herstellungsverfahren |
DE10039441A1 (de) | 2000-08-11 | 2002-02-28 | Infineon Technologies Ag | Speicherzelle, Speicherzellenanordnung und Herstellungsverfahren |
DE10129958B4 (de) * | 2001-06-21 | 2006-07-13 | Infineon Technologies Ag | Speicherzellenanordnung und Herstellungsverfahren |
JP4901048B2 (ja) * | 2001-06-28 | 2012-03-21 | 三星電子株式会社 | 浮遊トラップ型不揮発性メモリ素子 |
TW575960B (en) * | 2001-12-18 | 2004-02-11 | Infineon Technologies Ag | Memory cell with trench transistor |
JP2003309192A (ja) * | 2002-04-17 | 2003-10-31 | Fujitsu Ltd | 不揮発性半導体メモリおよびその製造方法 |
US6853587B2 (en) * | 2002-06-21 | 2005-02-08 | Micron Technology, Inc. | Vertical NROM having a storage density of 1 bit per 1F2 |
-
2003
- 2003-10-10 US US10/683,649 patent/US6965143B2/en not_active Expired - Fee Related
-
2004
- 2004-09-16 DE DE112004001922T patent/DE112004001922B4/de not_active Expired - Fee Related
- 2004-09-16 CN CNA2004800297243A patent/CN1868069A/zh active Pending
- 2004-09-16 JP JP2006533937A patent/JP5806439B2/ja not_active Expired - Fee Related
- 2004-09-16 WO PCT/US2004/030696 patent/WO2005038933A1/en active Application Filing
- 2004-09-16 GB GB0607721A patent/GB2422955B/en not_active Expired - Fee Related
- 2004-10-11 TW TW093130708A patent/TWI359461B/zh not_active IP Right Cessation
-
2006
- 2006-04-10 KR KR1020067006920A patent/KR101097416B1/ko not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101308867B (zh) * | 2007-05-17 | 2012-07-18 | 三星电子株式会社 | 存储装置及其制造方法和操作方法 |
CN101728252B (zh) * | 2008-10-24 | 2011-10-05 | 中芯国际集成电路制造(上海)有限公司 | 形成快闪存储器栅极的方法以及快闪存储器 |
CN102738209A (zh) * | 2011-04-06 | 2012-10-17 | 旺宏电子股份有限公司 | 半导体元件及其制造方法 |
WO2021092944A1 (zh) * | 2019-11-15 | 2021-05-20 | 江苏时代全芯存储科技股份有限公司 | 场效晶体管结构及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200527546A (en) | 2005-08-16 |
JP2007524233A (ja) | 2007-08-23 |
GB2422955A (en) | 2006-08-09 |
DE112004001922B4 (de) | 2009-01-22 |
GB2422955B (en) | 2007-04-11 |
TWI359461B (en) | 2012-03-01 |
US6965143B2 (en) | 2005-11-15 |
KR101097416B1 (ko) | 2011-12-23 |
WO2005038933A1 (en) | 2005-04-28 |
KR20070007247A (ko) | 2007-01-15 |
DE112004001922T5 (de) | 2006-09-07 |
US20050077566A1 (en) | 2005-04-14 |
GB0607721D0 (en) | 2006-05-31 |
JP5806439B2 (ja) | 2015-11-10 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20070302 Address after: California, USA Applicant after: SPANSION LLC Address before: California, USA Applicant before: Spanson Co. Effective date of registration: 20070302 Address after: California, USA Applicant after: Spanson Co. Address before: California, USA Applicant before: ADVANCED MICRO DEVICES, Inc. |
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C12 | Rejection of a patent application after its publication | ||
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Application publication date: 20061122 |