CN1886803A - 闪存装置 - Google Patents
闪存装置 Download PDFInfo
- Publication number
- CN1886803A CN1886803A CNA2004800347670A CN200480034767A CN1886803A CN 1886803 A CN1886803 A CN 1886803A CN A2004800347670 A CNA2004800347670 A CN A2004800347670A CN 200480034767 A CN200480034767 A CN 200480034767A CN 1886803 A CN1886803 A CN 1886803A
- Authority
- CN
- China
- Prior art keywords
- storage arrangement
- layer
- conductive layer
- conductive
- dielectric layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003860 storage Methods 0.000 claims abstract description 56
- 238000009413 insulation Methods 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 238000007667 floating Methods 0.000 claims description 9
- 230000006870 function Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 238000000034 method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012163 sequencing technique Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- -1 structure Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/726,508 | 2003-12-04 | ||
US10/726,508 US6933558B2 (en) | 2003-12-04 | 2003-12-04 | Flash memory device |
PCT/US2004/035482 WO2005062310A1 (en) | 2003-12-04 | 2004-10-26 | Flash memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1886803A true CN1886803A (zh) | 2006-12-27 |
CN1886803B CN1886803B (zh) | 2011-09-14 |
Family
ID=34633347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800347670A Active CN1886803B (zh) | 2003-12-04 | 2004-10-26 | 闪存装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6933558B2 (zh) |
JP (1) | JP2007513519A (zh) |
KR (1) | KR101142990B1 (zh) |
CN (1) | CN1886803B (zh) |
DE (1) | DE112004002399T5 (zh) |
GB (1) | GB2424518B (zh) |
TW (1) | TWI358134B (zh) |
WO (1) | WO2005062310A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108511452A (zh) * | 2017-02-28 | 2018-09-07 | 华邦电子股份有限公司 | 或非型闪速存储器及其制造方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10220923B4 (de) * | 2002-05-10 | 2006-10-26 | Infineon Technologies Ag | Verfahren zur Herstellung eines nicht-flüchtigen Flash-Halbleiterspeichers |
KR100598109B1 (ko) * | 2004-10-08 | 2006-07-07 | 삼성전자주식회사 | 비휘발성 기억 소자 및 그 형성 방법 |
US7825460B2 (en) * | 2006-09-06 | 2010-11-02 | International Business Machines Corporation | Vertical field effect transistor arrays and methods for fabrication thereof |
US8785268B2 (en) * | 2006-12-21 | 2014-07-22 | Spansion Llc | Memory system with Fin FET technology |
US8779495B2 (en) * | 2007-04-19 | 2014-07-15 | Qimonda Ag | Stacked SONOS memory |
JP5196500B2 (ja) * | 2007-05-24 | 2013-05-15 | 独立行政法人産業技術総合研究所 | 記憶素子及びその読み出し方法 |
KR100878347B1 (ko) * | 2007-05-28 | 2009-01-15 | 한양대학교 산학협력단 | 소노스 메모리 소자 및 그 제조 방법 |
US7898021B2 (en) * | 2007-10-26 | 2011-03-01 | International Business Machines Corporation | Semiconductor fin based nonvolatile memory device and method for fabrication thereof |
KR100950044B1 (ko) | 2008-04-14 | 2010-03-29 | 한양대학교 산학협력단 | 멀티비트 플래시 메모리 소자 및 플래시 메모리, 그리고플래시 메모리 소자의 구동 장치 및 방법 |
US7781817B2 (en) * | 2008-06-26 | 2010-08-24 | International Business Machines Corporation | Structures, fabrication methods, and design structures for multiple bit flash memory cells |
US8461640B2 (en) | 2009-09-08 | 2013-06-11 | Silicon Storage Technology, Inc. | FIN-FET non-volatile memory cell, and an array and method of manufacturing |
US10276728B2 (en) * | 2017-07-07 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including non-volatile memory cells |
CN109285838B (zh) * | 2018-08-28 | 2023-05-02 | 中国科学院微电子研究所 | 半导体存储设备及其制造方法及包括存储设备的电子设备 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2877462B2 (ja) * | 1990-07-23 | 1999-03-31 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5379255A (en) * | 1992-12-14 | 1995-01-03 | Texas Instruments Incorporated | Three dimensional famos memory devices and methods of fabricating |
US5382540A (en) * | 1993-09-20 | 1995-01-17 | Motorola, Inc. | Process for forming an electrically programmable read-only memory cell |
JPH0878635A (ja) * | 1994-08-31 | 1996-03-22 | Toshiba Corp | 半導体記憶装置 |
DE19600422C1 (de) * | 1996-01-08 | 1997-08-21 | Siemens Ag | Elektrisch programmierbare Speicherzellenanordnung und Verfahren zu deren Herstellung |
US5990509A (en) * | 1997-01-22 | 1999-11-23 | International Business Machines Corporation | 2F-square memory cell for gigabit memory applications |
US5973356A (en) * | 1997-07-08 | 1999-10-26 | Micron Technology, Inc. | Ultra high density flash memory |
US6207515B1 (en) * | 1998-05-27 | 2001-03-27 | Taiwan Semiconductor Manufacturing Company | Method of fabricating buried source to shrink chip size in memory array |
JP4332278B2 (ja) * | 2000-03-10 | 2009-09-16 | Okiセミコンダクタ株式会社 | 不揮発性メモリの製造方法 |
US6580124B1 (en) * | 2000-08-14 | 2003-06-17 | Matrix Semiconductor Inc. | Multigate semiconductor device with vertical channel current and method of fabrication |
EP1312120A1 (en) * | 2000-08-14 | 2003-05-21 | Matrix Semiconductor, Inc. | Dense arrays and charge storage devices, and methods for making same |
US6424001B1 (en) * | 2001-02-09 | 2002-07-23 | Micron Technology, Inc. | Flash memory with ultra thin vertical body transistors |
KR100483035B1 (ko) * | 2001-03-30 | 2005-04-15 | 샤프 가부시키가이샤 | 반도체 기억장치 및 그 제조방법 |
JP4770061B2 (ja) * | 2001-05-31 | 2011-09-07 | ソニー株式会社 | 不揮発性半導体記憶装置、および、その製造方法 |
DE10130766B4 (de) * | 2001-06-26 | 2005-08-11 | Infineon Technologies Ag | Vertikal-Transistor, Speicheranordnung sowie Verfahren zum Herstellen eines Vertikal-Transistors |
KR100431489B1 (ko) * | 2001-09-04 | 2004-05-12 | 한국과학기술원 | 플래쉬 메모리 소자 및 제조방법 |
JP2003218242A (ja) * | 2002-01-24 | 2003-07-31 | Hitachi Ltd | 不揮発性半導体記憶装置およびその製造方法 |
DE10220923B4 (de) | 2002-05-10 | 2006-10-26 | Infineon Technologies Ag | Verfahren zur Herstellung eines nicht-flüchtigen Flash-Halbleiterspeichers |
US6551880B1 (en) * | 2002-05-17 | 2003-04-22 | Macronix International Co., Ltd. | Method of utilizing fabrication process of floating gate spacer to build twin-bit monos/sonos memory |
US6853587B2 (en) * | 2002-06-21 | 2005-02-08 | Micron Technology, Inc. | Vertical NROM having a storage density of 1 bit per 1F2 |
US7192876B2 (en) * | 2003-05-22 | 2007-03-20 | Freescale Semiconductor, Inc. | Transistor with independent gate structures |
-
2003
- 2003-12-04 US US10/726,508 patent/US6933558B2/en not_active Expired - Lifetime
-
2004
- 2004-10-26 WO PCT/US2004/035482 patent/WO2005062310A1/en active Application Filing
- 2004-10-26 KR KR1020067011090A patent/KR101142990B1/ko active IP Right Grant
- 2004-10-26 JP JP2006542575A patent/JP2007513519A/ja active Pending
- 2004-10-26 DE DE112004002399T patent/DE112004002399T5/de not_active Ceased
- 2004-10-26 CN CN2004800347670A patent/CN1886803B/zh active Active
- 2004-10-26 GB GB0612036A patent/GB2424518B/en active Active
- 2004-12-03 TW TW093137306A patent/TWI358134B/zh active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108511452A (zh) * | 2017-02-28 | 2018-09-07 | 华邦电子股份有限公司 | 或非型闪速存储器及其制造方法 |
CN108511452B (zh) * | 2017-02-28 | 2021-04-30 | 华邦电子股份有限公司 | 或非型闪速存储器及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
GB0612036D0 (en) | 2006-07-26 |
US6933558B2 (en) | 2005-08-23 |
KR101142990B1 (ko) | 2012-05-11 |
GB2424518A (en) | 2006-09-27 |
WO2005062310A1 (en) | 2005-07-07 |
TWI358134B (en) | 2012-02-11 |
TW200532923A (en) | 2005-10-01 |
CN1886803B (zh) | 2011-09-14 |
DE112004002399T5 (de) | 2006-10-19 |
GB2424518B (en) | 2007-07-04 |
US20050121716A1 (en) | 2005-06-09 |
JP2007513519A (ja) | 2007-05-24 |
KR20060123264A (ko) | 2006-12-01 |
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PB01 | Publication | ||
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ASS | Succession or assignment of patent right |
Owner name: SPANSION CO., LTD. Free format text: FORMER OWNER: SPANSION CO.,LTD. Effective date: 20070330 Owner name: SPANSION CO.,LTD. Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. Effective date: 20070330 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20070330 Address after: California, USA Applicant after: SPANSION LLC Address before: California, USA Applicant before: Spanson Co. Effective date of registration: 20070330 Address after: California, USA Applicant after: Spanson Co. Address before: California, USA Applicant before: ADVANCED MICRO DEVICES, Inc. |
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Effective date of registration: 20160317 Address after: California, USA Patentee after: CYPRESS SEMICONDUCTOR Corp. Address before: California, USA Patentee before: SPANSION LLC |