CN1805138A - 具有翼状物的互连结构 - Google Patents
具有翼状物的互连结构 Download PDFInfo
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- CN1805138A CN1805138A CNA2005100026500A CN200510002650A CN1805138A CN 1805138 A CN1805138 A CN 1805138A CN A2005100026500 A CNA2005100026500 A CN A2005100026500A CN 200510002650 A CN200510002650 A CN 200510002650A CN 1805138 A CN1805138 A CN 1805138A
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- contact portion
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- transistor
- metal level
- circuit according
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 288
- 239000002184 metal Substances 0.000 claims abstract description 288
- 230000005540 biological transmission Effects 0.000 claims description 40
- 229910000679 solder Inorganic materials 0.000 claims description 35
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- 239000003990 capacitor Substances 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 17
- 239000000463 material Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000002787 reinforcement Effects 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (40)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/765,474 US7265448B2 (en) | 2004-01-26 | 2004-01-26 | Interconnect structure for power transistors |
US10/765,474 | 2004-01-26 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100020307A Division CN100435330C (zh) | 2004-01-26 | 2005-01-12 | 具有平面型连接的集成电路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1805138A true CN1805138A (zh) | 2006-07-19 |
CN100440501C CN100440501C (zh) | 2008-12-03 |
Family
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CNB2005100026500A Expired - Fee Related CN100440501C (zh) | 2004-01-26 | 2005-01-12 | 具有翼状物的互连结构 |
CNA2005100026483A Pending CN1805137A (zh) | 2004-01-26 | 2005-01-12 | 具有铝芯的互连结构 |
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JP (3) | JP4596925B2 (zh) |
CN (3) | CN100435330C (zh) |
HK (1) | HK1090752A1 (zh) |
TW (3) | TWI354369B (zh) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7851872B2 (en) | 2003-10-22 | 2010-12-14 | Marvell World Trade Ltd. | Efficient transistor structure |
US7960833B2 (en) * | 2003-10-22 | 2011-06-14 | Marvell World Trade Ltd. | Integrated circuits and interconnect structure for integrated circuits |
US7414275B2 (en) | 2005-06-24 | 2008-08-19 | International Business Machines Corporation | Multi-level interconnections for an integrated circuit chip |
JP4424331B2 (ja) * | 2005-08-01 | 2010-03-03 | セイコーエプソン株式会社 | 静電アクチュエータ、液滴吐出ヘッド、液滴吐出ヘッドの駆動方法及び静電アクチュエータの製造方法 |
US20080187969A1 (en) * | 2005-10-27 | 2008-08-07 | Rosetta Inpharmatics Llc | Nucleic acid amplification using non-random primers |
US9147644B2 (en) | 2008-02-26 | 2015-09-29 | International Rectifier Corporation | Semiconductor device and passive component integration in a semiconductor package |
US8786072B2 (en) * | 2007-02-27 | 2014-07-22 | International Rectifier Corporation | Semiconductor package |
TWI479634B (zh) * | 2007-03-15 | 2015-04-01 | Marvell World Trade Ltd | 積體電路與用於此積體電路之互連結構 |
KR100851065B1 (ko) * | 2007-04-30 | 2008-08-12 | 삼성전기주식회사 | 전자기 밴드갭 구조물 및 인쇄회로기판 |
JP2009111110A (ja) * | 2007-10-30 | 2009-05-21 | Nec Electronics Corp | 半導体装置 |
JP4945619B2 (ja) * | 2009-09-24 | 2012-06-06 | 株式会社東芝 | 半導体記憶装置 |
US8018027B2 (en) * | 2009-10-30 | 2011-09-13 | Murata Manufacturing Co., Ltd. | Flip-bonded dual-substrate inductor, flip-bonded dual-substrate inductor, and integrated passive device including a flip-bonded dual-substrate inductor |
US9583478B1 (en) * | 2010-04-16 | 2017-02-28 | Silego Technology, Inc. | Lateral power MOSFET |
JP2012019063A (ja) * | 2010-07-08 | 2012-01-26 | Renesas Electronics Corp | 半導体装置 |
US8614488B2 (en) * | 2010-12-08 | 2013-12-24 | Ying-Nan Wen | Chip package and method for forming the same |
CN102543190B (zh) * | 2010-12-28 | 2015-05-27 | 炬芯(珠海)科技有限公司 | 半导体装置、芯片及修改比特数据的方法 |
TWI469311B (zh) * | 2011-04-29 | 2015-01-11 | 萬國半導體股份有限公司 | 聯合封裝的功率半導體元件 |
TWI469292B (zh) * | 2011-07-26 | 2015-01-11 | 萬國半導體股份有限公司 | 應用雙層引線框架的堆疊式功率半導體裝置及其製備方法 |
US8853860B2 (en) * | 2012-03-23 | 2014-10-07 | Teledyne Scientific & Imaging, Llc | Method and apparatus for reduced parasitics and improved multi-finger transistor thermal impedance |
US8759956B2 (en) * | 2012-07-05 | 2014-06-24 | Infineon Technologies Ag | Chip package and method of manufacturing the same |
KR101420536B1 (ko) * | 2012-12-14 | 2014-07-17 | 삼성전기주식회사 | 전력 모듈 패키지 |
US8884420B1 (en) * | 2013-07-12 | 2014-11-11 | Infineon Technologies Austria Ag | Multichip device |
DE102016203906A1 (de) * | 2016-03-10 | 2017-09-28 | Robert Bosch Gmbh | Halbleiterbauelement, insbesondere Leistungstransistor |
US9960231B2 (en) * | 2016-06-17 | 2018-05-01 | Qualcomm Incorporated | Standard cell architecture for parasitic resistance reduction |
JP6658441B2 (ja) * | 2016-10-06 | 2020-03-04 | 三菱電機株式会社 | 半導体装置 |
US10283526B2 (en) * | 2016-12-21 | 2019-05-07 | Qualcomm Incorporated | Standard cell circuits employing voltage rails electrically coupled to metal shunts for reducing or avoiding increases in voltage drop |
US10236886B2 (en) | 2016-12-28 | 2019-03-19 | Qualcomm Incorporated | Multiple via structure for high performance standard cells |
US10249711B2 (en) * | 2017-06-29 | 2019-04-02 | Teledyne Scientific & Imaging, Llc | FET with micro-scale device array |
US11276624B2 (en) * | 2019-12-17 | 2022-03-15 | Infineon Technologies Austria Ag | Semiconductor device power metallization layer with stress-relieving heat sink structure |
US11508659B2 (en) * | 2020-09-10 | 2022-11-22 | Taiwan Semiconductor Manufacturing Company Ltd. | Interconnect structure in semiconductor device and method of forming the same |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03248528A (ja) * | 1990-02-27 | 1991-11-06 | Nec Kansai Ltd | 半導体装置の製造方法 |
US5323036A (en) * | 1992-01-21 | 1994-06-21 | Harris Corporation | Power FET with gate segments covering drain regions disposed in a hexagonal pattern |
JP3378334B2 (ja) * | 1994-01-26 | 2003-02-17 | 株式会社東芝 | 半導体装置実装構造体 |
FR2748601B1 (fr) | 1996-05-07 | 1998-07-24 | Sgs Thomson Microelectronics | Procede de formation d'interconnexions dans un circuit integre |
IL120514A (en) | 1997-03-25 | 2000-08-31 | P C B Ltd | Electronic interconnect structure and method for manufacturing it |
IL120866A0 (en) | 1997-05-20 | 1997-09-30 | Micro Components Systems Ltd | Process for producing an aluminum substrate |
US6057171A (en) * | 1997-09-25 | 2000-05-02 | Frequency Technology, Inc. | Methods for determining on-chip interconnect process parameters |
JPH11111860A (ja) * | 1997-10-06 | 1999-04-23 | Mitsubishi Electric Corp | 半導体装置 |
JP4015746B2 (ja) * | 1997-10-30 | 2007-11-28 | 松下電器産業株式会社 | 半導体装置 |
US6178082B1 (en) | 1998-02-26 | 2001-01-23 | International Business Machines Corporation | High temperature, conductive thin film diffusion barrier for ceramic/metal systems |
JP3671999B2 (ja) * | 1998-02-27 | 2005-07-13 | 富士ゼロックス株式会社 | 半導体装置およびその製造方法ならびに半導体実装装置 |
JP3407020B2 (ja) | 1998-05-25 | 2003-05-19 | Necエレクトロニクス株式会社 | 半導体装置 |
IL127256A (en) | 1998-11-25 | 2002-09-12 | Micro Components Ltd | A device for packaging electronic components, a process for its manufacture and a pin device used in the process |
JP4479015B2 (ja) * | 1999-06-10 | 2010-06-09 | パナソニック株式会社 | コンデンサ内蔵キャリア基板およびその製造方法 |
JP4034477B2 (ja) * | 1999-07-01 | 2008-01-16 | 株式会社日立製作所 | インターポーザ及びその製造方法とそれを用いた回路モジュール |
DE19958906A1 (de) | 1999-12-07 | 2001-07-05 | Infineon Technologies Ag | Herstellung von integrierten Schaltungen |
US6278264B1 (en) * | 2000-02-04 | 2001-08-21 | Volterra Semiconductor Corporation | Flip-chip switching regulator |
JP4854845B2 (ja) * | 2000-02-25 | 2012-01-18 | イビデン株式会社 | 多層プリント配線板 |
US6486557B1 (en) | 2000-02-29 | 2002-11-26 | International Business Machines Corporation | Hybrid dielectric structure for improving the stiffness of back end of the line structures |
JP4120133B2 (ja) * | 2000-04-28 | 2008-07-16 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
JP2001339047A (ja) | 2000-05-29 | 2001-12-07 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US6737301B2 (en) * | 2000-07-13 | 2004-05-18 | Isothermal Systems Research, Inc. | Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor |
JP2002289817A (ja) | 2001-03-27 | 2002-10-04 | Toshiba Corp | 半導体集積回路装置及びその製造方法 |
US6426558B1 (en) * | 2001-05-14 | 2002-07-30 | International Business Machines Corporation | Metallurgy for semiconductor devices |
JP4124981B2 (ja) | 2001-06-04 | 2008-07-23 | 株式会社ルネサステクノロジ | 電力用半導体装置および電源回路 |
TWI312166B (en) * | 2001-09-28 | 2009-07-11 | Toppan Printing Co Ltd | Multi-layer circuit board, integrated circuit package, and manufacturing method for multi-layer circuit board |
US6477034B1 (en) | 2001-10-03 | 2002-11-05 | Intel Corporation | Interposer substrate with low inductance capacitive paths |
JP2003142623A (ja) * | 2001-10-31 | 2003-05-16 | Hitachi Ltd | 配線基板とその製造方法,半導体装置並びに配線基板形成用のベース基板 |
JP3760857B2 (ja) * | 2001-12-17 | 2006-03-29 | 松下電器産業株式会社 | プリント配線板の製造方法 |
JP2003347727A (ja) * | 2002-05-30 | 2003-12-05 | Hitachi Ltd | 配線基板および両面実装半導体製品 |
JP3708082B2 (ja) | 2003-02-27 | 2005-10-19 | 株式会社ルネサステクノロジ | 電力半導体装置 |
JP2006222298A (ja) * | 2005-02-10 | 2006-08-24 | Renesas Technology Corp | 半導体装置およびその製造方法 |
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EP1727200A3 (en) | 2006-12-13 |
EP1727200B1 (en) | 2020-04-15 |
CN1649141A (zh) | 2005-08-03 |
EP1571708B1 (en) | 2019-06-19 |
US7459381B2 (en) | 2008-12-02 |
JP2006093712A (ja) | 2006-04-06 |
EP1727200A2 (en) | 2006-11-29 |
TW200536106A (en) | 2005-11-01 |
EP1727199A2 (en) | 2006-11-29 |
US20060175709A1 (en) | 2006-08-10 |
EP1571708A3 (en) | 2006-06-14 |
TW200603387A (en) | 2006-01-16 |
JP2006080540A (ja) | 2006-03-23 |
TWI354368B (en) | 2011-12-11 |
HK1090752A1 (en) | 2006-12-29 |
CN1805137A (zh) | 2006-07-19 |
US7265448B2 (en) | 2007-09-04 |
EP1571708A2 (en) | 2005-09-07 |
TW200603386A (en) | 2006-01-16 |
CN100435330C (zh) | 2008-11-19 |
JP5502255B2 (ja) | 2014-05-28 |
CN100440501C (zh) | 2008-12-03 |
JP2005210114A (ja) | 2005-08-04 |
TWI354367B (en) | 2011-12-11 |
JP4596925B2 (ja) | 2010-12-15 |
TWI354369B (en) | 2011-12-11 |
EP1727199A3 (en) | 2006-12-13 |
US20050161706A1 (en) | 2005-07-28 |
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