CN102543190B - 半导体装置、芯片及修改比特数据的方法 - Google Patents
半导体装置、芯片及修改比特数据的方法 Download PDFInfo
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- CN102543190B CN102543190B CN201010609607.1A CN201010609607A CN102543190B CN 102543190 B CN102543190 B CN 102543190B CN 201010609607 A CN201010609607 A CN 201010609607A CN 102543190 B CN102543190 B CN 102543190B
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 628
- 230000008859 change Effects 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 20
- 230000004048 modification Effects 0.000 description 19
- 238000012986 modification Methods 0.000 description 19
- 230000006870 function Effects 0.000 description 9
- 238000004590 computer program Methods 0.000 description 5
- 238000002715 modification method Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (16)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010609607.1A CN102543190B (zh) | 2010-12-28 | 2010-12-28 | 半导体装置、芯片及修改比特数据的方法 |
PCT/CN2011/083911 WO2012089011A1 (zh) | 2010-12-28 | 2011-12-14 | 半导体装置、芯片及修改比特数据的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010609607.1A CN102543190B (zh) | 2010-12-28 | 2010-12-28 | 半导体装置、芯片及修改比特数据的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102543190A CN102543190A (zh) | 2012-07-04 |
CN102543190B true CN102543190B (zh) | 2015-05-27 |
Family
ID=46349882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010609607.1A Active CN102543190B (zh) | 2010-12-28 | 2010-12-28 | 半导体装置、芯片及修改比特数据的方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN102543190B (zh) |
WO (1) | WO2012089011A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109543260B (zh) * | 2018-11-09 | 2021-02-02 | 珠海格力电器股份有限公司 | 一种记录芯片版本号的电路、方法及存储介质 |
CN113380767B (zh) * | 2021-05-13 | 2024-01-12 | 裕太微电子股份有限公司 | 一种芯片版本号控制结构及方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2338593A (en) * | 1998-06-19 | 1999-12-22 | Texas Instruments Ltd | Integrated circuits provided with self-information |
CN1635638A (zh) * | 2003-12-30 | 2005-07-06 | 中芯国际集成电路制造(上海)有限公司 | 用做测试装置的多金属层sram存储器 |
CN1877836A (zh) * | 2005-06-10 | 2006-12-13 | 联发科技股份有限公司 | 一种集成电路及修正该集成电路的版本号码的相关方法 |
CN101118904A (zh) * | 2007-09-05 | 2008-02-06 | 华为技术有限公司 | 一种集成电路及集成电路的布线与版本号修改的方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1521622A (zh) * | 2003-01-29 | 2004-08-18 | 上海芯华微电子有限公司 | 集成电路的版图识别方法 |
US20040251472A1 (en) * | 2003-06-11 | 2004-12-16 | Broadcom Corporation | Memory cell for modification of revision identifier in an integrated circuit chip |
US7265448B2 (en) * | 2004-01-26 | 2007-09-04 | Marvell World Trade Ltd. | Interconnect structure for power transistors |
US7349264B2 (en) * | 2005-12-28 | 2008-03-25 | Sandisk Corporation | Alternate sensing techniques for non-volatile memories |
US7736965B2 (en) * | 2007-12-06 | 2010-06-15 | International Business Machines Corporation | Method of making a FinFET device structure having dual metal and high-k gates |
-
2010
- 2010-12-28 CN CN201010609607.1A patent/CN102543190B/zh active Active
-
2011
- 2011-12-14 WO PCT/CN2011/083911 patent/WO2012089011A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2338593A (en) * | 1998-06-19 | 1999-12-22 | Texas Instruments Ltd | Integrated circuits provided with self-information |
CN1635638A (zh) * | 2003-12-30 | 2005-07-06 | 中芯国际集成电路制造(上海)有限公司 | 用做测试装置的多金属层sram存储器 |
CN1877836A (zh) * | 2005-06-10 | 2006-12-13 | 联发科技股份有限公司 | 一种集成电路及修正该集成电路的版本号码的相关方法 |
CN101118904A (zh) * | 2007-09-05 | 2008-02-06 | 华为技术有限公司 | 一种集成电路及集成电路的布线与版本号修改的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102543190A (zh) | 2012-07-04 |
WO2012089011A1 (zh) | 2012-07-05 |
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C06 | Publication | ||
PB01 | Publication | ||
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ASS | Succession or assignment of patent right |
Owner name: JUXIN(ZHUHAI) TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: JULI INTEGRATED CIRCUIT DESIGN CO., LTD. Effective date: 20141212 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20141212 Address after: 519085, C, No. 1, No. four, 1 hi tech Zone, Tang Wan Town, Guangdong, Zhuhai Applicant after: ACTIONS (ZHUHAI) TECHNOLOGY CO., LTD. Address before: 519085 No. 1, unit 15, building 1, 1 Da Ha Road, Tang Wan Town, Guangdong, Zhuhai Applicant before: Juli Integrated Circuit Design Co., Ltd. |
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Effective date of registration: 20161202 Address after: 519000 Guangdong city of Zhuhai province Hengqin Baohua Road No. 6, room 105 -20527 Patentee after: Yi (Zhuhai) core Microelectronics Research Institute Co. Ltd. Address before: 519085 C District, 1# workshop, No. 1, science and technology No. four road, hi tech Zone, Zhuhai, Guangdong, China Patentee before: ACTIONS (ZHUHAI) TECHNOLOGY CO., LTD. |