JP6658441B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6658441B2 JP6658441B2 JP2016198125A JP2016198125A JP6658441B2 JP 6658441 B2 JP6658441 B2 JP 6658441B2 JP 2016198125 A JP2016198125 A JP 2016198125A JP 2016198125 A JP2016198125 A JP 2016198125A JP 6658441 B2 JP6658441 B2 JP 6658441B2
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- 239000004065 semiconductor Substances 0.000 title claims description 80
- 239000000758 substrate Substances 0.000 claims description 162
- 239000000463 material Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 238000012986 modification Methods 0.000 description 22
- 230000004048 modification Effects 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 8
- 230000020169 heat generation Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000002076 thermal analysis method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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Description
図1は、実施の形態1に係る半導体装置の断面図である。本実施の形態に係る半導体装置80は、第1基板10を備える。第1基板10にはトランジスタ12が設けられる。本実施の形態ではトランジスタ12は高周波用のFETである。第1基板10は化合物半導体から形成される。第1基板10の材料として、ヒ化ガリウム、窒化ガリウム、リン化インジウムなどの化合物半導体が用いられる。
図9は、実施の形態2に係る半導体装置の断面図である。本実施の形態に係る半導体装置380は第2電極345の構造が半導体装置80と異なる。その他の構造は、実施の形態1と同様である。第2電極345は、第2基板320の第1面61から第2面62に貫通する。第2電極345は、第1面61に第2ボンディングパッド41を備える。また、第2電極345は、第2面62に第2パッド342を備える。第2ボンディングパッド41と第2パッド342は第2バイアホール327によって接続される。第2電極345と第1電極44は、第2基板320の母材によって隔てられている。
図10は、実施の形態3に係る半導体装置の断面図である。本実施の形態に係る半導体装置480は第1電極444の構造が半導体装置80と異なる。その他の構造は、実施の形態1と同様である。第1電極444は、導電性バンプ30と接続され、第2面62に設けられた第1パッド421を備える。第1パッド421は、第2ボンディングパッド41の真下まで延びている。第1パッド421は、平面視において第2ボンディングパッド41と重なる位置まで形成される。
図11は、実施の形態4に係る半導体装置の断面図である。本実施の形態に係る半導体装置580は、第2基板520の形状が実施の形態3と異なる。第2基板520の第1面61には第1凹部528が形成される。第2電極45は、第1凹部528の底面に設けられる。その他の形状は実施の形態3と同様である。第1凹部528は、第2基板520の第1面61をエッチングして形成される。
Claims (12)
- 第1基板と、
前記第1基板に設けられたトランジスタと、
前記第1基板の上面に設けられ、前記トランジスタのゲート電極と接続されたゲートパッドと、
前記ゲートパッドの上に設けられた導電性バンプと、
前記第1基板の上方に設けられ、第1面と、前記第1面と反対の面である第2面とを有する第2基板と、
前記第1面から前記第2面に貫通し、前記第2面側で前記導電性バンプと接続される第1電極と、
一端が前記第1電極の前記第1面側に接続され、他端が入力端子に接続された抵抗と、
前記第1面に前記第1電極と隣接して設けられ、前記抵抗を介さずに前記入力端子に接続された第2電極と、
を備え、
前記第1電極と前記第2電極は、前記第2基板の母材によって隔てられ、
前記トランジスタのドレイン電極から前記ゲート電極に流れるゲートリーク電流は、前記第1電極から前記第2基板の前記母材および前記第2電極を通って前記入力端子に流れることを特徴とする半導体装置。 - 前記第1電極と前記第2電極との間の間隔は100μm以下であることを特徴とする請求項1に記載の半導体装置。
- 前記第2電極は、前記第1面に設けられた第2ボンディングパッドであることを特徴とする請求項1または2に記載の半導体装置。
- 前記第2電極は、前記第1面から前記第2面に貫通することを特徴とする請求項1または2に記載の半導体装置。
- 前記第1電極は、前記導電性バンプと接続され、前記第2面に設けられた第1パッドを備え、
前記第1パッドは、前記第2ボンディングパッドの真下まで延びていることを特徴とする請求項3に記載の半導体装置。 - 前記第2基板は、前記第2ボンディングパッドが設けられた部分が周囲よりも薄いことを特徴とする請求項5に記載の半導体装置。
- 前記第1面には第1凹部が形成され、
前記第2ボンディングパッドは前記第1凹部を埋め込むことを特徴とする請求項6に記載の半導体装置。 - 前記第2面には、前記第2ボンディングパッドの真下に第2凹部が形成され、
前記第1パッドは前記第2凹部を埋め込むことを特徴とする請求項6または7に記載の半導体装置。 - 前記第2基板の前記母材は、抵抗率が100Ωcm以上のシリコンであることを特徴とする請求項1〜8の何れか1項に記載の半導体装置。
- 前記第2基板には、整合回路が形成されていることを特徴とする請求項1〜9の何れか1項に記載の半導体装置。
- 前記第1基板と前記第2基板は、樹脂で封止されていることを特徴とする請求項1〜10の何れか1項に記載の半導体装置。
- 前記第1基板は、化合物半導体から形成されることを特徴とする請求項1〜11の何れか1項に記載の半導体装置。
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DE102017213144.6A DE102017213144B4 (de) | 2016-10-06 | 2017-07-31 | Halbleitervorrichtung |
KR1020170126864A KR101958568B1 (ko) | 2016-10-06 | 2017-09-29 | 반도체 장치 |
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JPH11297941A (ja) * | 1998-04-09 | 1999-10-29 | Nec Corp | 半導体装置 |
JP2002110792A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | マイクロ波半導体装置 |
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DE10361714B4 (de) * | 2003-12-30 | 2009-06-10 | Infineon Technologies Ag | Halbleiterbauelement |
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