TWI708338B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
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- TWI708338B TWI708338B TW108110313A TW108110313A TWI708338B TW I708338 B TWI708338 B TW I708338B TW 108110313 A TW108110313 A TW 108110313A TW 108110313 A TW108110313 A TW 108110313A TW I708338 B TWI708338 B TW I708338B
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Abstract
本發明提供一種半導體裝置,其能夠將擴散至基板內部之熱有效地散熱至外部。在印刷基板構裝半導體晶片。半導體晶片在基板的與印刷基板對置的第一面形成有源元件。在與有源元件不同的位置,設置由熱傳導率比基板高的材料構成的熱傳導膜。在第一面上配置覆蓋有源元件以及熱傳導膜的絕緣膜。在絕緣膜上設置與熱傳導膜電性連接的凸塊。設置有從與第一面相反側的第二面到達熱傳導膜的貫通通孔。從在俯視時與有源元件重疊的第二面的區域到貫通通孔的內面連續地配置由熱傳導率比基板高的材料構成的熱傳導構件。半導體晶片的凸塊與印刷基板的連接盤連接,半導體晶片被密封樹脂密封。
Description
本發明係關於一種半導體裝置。
有在組裝於半導體晶片的功率放大器運作時,電晶體自體發熱,而半導體晶片的性能隨著電晶體的工作溫度上升而劣化的情況。為了抑制半導體晶片的劣化,期望從作為發熱源的電晶體向半導體晶片的外部有效地進行散熱。
在專利文獻1中,有從構裝在模組基板的半導體晶片起的導熱路徑的相關記載。在專利文獻1記載的發明中,形成如下的導熱路徑,即,從半導體晶片的凸塊,經由形成在模組基板上面的端子以及從模組基板的上面到達下面的散熱貫通孔,到達形成在模組基板的下面的接地用電極。
在接地用的電極,連接電晶體的射極或源極。因而,射極或源極包含於導熱路徑的一部分。與凸塊連接並成為導熱路徑的射極或源極通常為小面積,致使導熱路徑中與射極或源極連接處變狹隘。因此,難以充分地降低導熱路徑的熱阻。
在專利文獻2公開了使散熱特性提高的半導體裝置。在專利文獻2所公開的半導體裝置中,設有從外部連接焊盤到達形成了有源元件的半導體基板的上面的散熱結構。於形成在半導體基板的上面的電晶體產生的熱,沿著半導體基板的上面橫向地傳遞至配置有散熱結構的位置,其後,經由散熱結構
而散熱。
專利文獻1:日本特開2011-198866號公報
專利文獻2:日本特開2014-99470號公報
在電晶體等發熱源產生的熱,除了沿著半導體基板的上面橫向地傳遞之外,亦在半導體基板往厚度方向傳遞。在以往的半導體裝置中,難以將在半導體基板表面的發熱源產生並擴散至半導體基板內部的熱有效地散熱至外部。
本發明的目的在於提供一種半導體裝置,其能夠將於基板的內部擴散的熱有效地散熱至外部。
根據本發明的一觀點提供一種半導體裝置,具有:印刷基板,其在構裝面設置有連接盤;以及半導體晶片,其構裝於上述印刷基板,上述半導體晶片具有:有源元件,其形成在基板的與上述印刷基板對置的第一面;熱傳導膜,其設置在上述基板的上述第一面的與上述有源元件不同的位置,且由熱傳導率比上述基板高的材料構成;絕緣膜,其配置在上述基板的上述第一面之上,覆蓋上述有源元件以及上述熱傳導膜;凸塊,其配置在上述絕緣膜上,與上述熱傳導膜電性連接;貫通通孔,其從上述基板的與上述第一面相反側的第二面到達上述熱傳導膜;以及熱傳導構件,其從在俯視時與上述有源元件重疊的上述第二面的區域連續
地配置至上述貫通通孔的內面,且由熱傳導率比上述基板高的材料構成,上述凸塊與上述連接盤連接,上述半導體晶片以密封樹脂密封。
根據本發明的其它的觀點,提供一種半導體裝置,具有:有源元件,其形成在基板的第一面;熱傳導膜,其設置在上述基板的上述第一面的與上述有源元件不同的位置,且由熱傳導率比上述基板高的材料構成;絕緣膜,其配置在上述基板的上述第一面之上,覆蓋上述有源元件以及上述熱傳導膜;凸塊,其配置在上述絕緣膜之上,與上述熱傳導膜電性連接;凹部,其設置在上述基板的與上述第一面相反側的第二面,且在俯視時與上述有源元件以及上述熱傳導膜至少部分重疊;以及熱傳導構件,其設置在上述凹部的內面,且由熱傳導率比上述基板高的材料構成,配置在上述凹部的底面的上述熱傳導構件與上述熱傳導膜,隔著上述基板的一部分而對置。
在有源元件產生並向基板側擴散的熱,通過熱傳導構件、熱傳導膜以及凸塊而散熱到外部。因此,能夠將往基板內部擴散的熱有效地散熱至外部。
10:阻抗匹配電路
11:驅動級放大電路
12:阻抗匹配電路
13:輸出級放大電路
14:控制電路
15:輸入端子
16:輸出端子
17、18:電感器
20:印刷基板
21:連接盤
23:外部連接用的電極
24:通路導體
25:內層的佈線
28:密封樹脂
30:半導體晶片
31:凸塊
32:Cu柱
33:焊料凸塊
40:半導體基板
41:貫通通孔
42:電晶體(有源元件)
43:熱傳導膜
45、46、47:絕緣膜
48:發熱源
49:熱傳導性膏體
51:熱傳導構件
60:凹部
61、62:熱傳導性膏體
B0:基極電極
B1:第一層基極佈線
C0:集極電極
C1:第一層集極佈線
C2:第二層集極佈線
E0:射極電極
E1:第一層射極佈線
E2:第二層射極佈線
T0、T1、T2、T3:熱路
圖1A是第一實施例的半導體裝置的方塊圖,圖1B是表示第一實施例的半導體裝置的各電路的佈局的平面圖,圖1C是第一實施例的半導體裝置的概略剖視圖。
圖2A是在第一實施例的半導體裝置所包含的半導體晶片上形成的輸出級放大電路的平面圖,圖2B是圖2A的一點鏈線2B-2B上的剖視圖。
圖3是第一實施例的半導體裝置的凸塊的附近的剖視圖。
圖4是第二實施例的半導體裝置所包含的半導體晶片的剖視圖。
圖5A是在第三實施例的半導體裝置所包含的半導體晶片上形成的輸出級放大電路的平面圖,圖5B是圖5A的一點鏈線5B-5B上的剖視圖。
圖6是第四實施例的半導體裝置所包含的半導體晶片的剖視圖。
圖7A是第五實施例的半導體裝置所包含的半導體晶片的剖視圖,圖7B是表示第五實施例的半導體裝置的各電路的佈局的平面圖。
圖8是第六實施例的半導體裝置所包含的半導體晶片的剖視圖。
圖9是第七實施例的半導體裝置所包含的半導體晶片的剖視圖。
〔第一實施例〕
參照圖1A~圖3的圖式,對第一實施例的半導體裝置進行說明。
圖1A是第一實施例的半導體裝置的方塊圖。輸入信號從輸入端子15經由阻抗匹配電路10輸入到驅動級放大電路11。被驅動級放大電路11放大的信號經由阻抗匹配電路12輸入到輸出級放大電路13。被輸出級放大電路13放大的信號從輸出端子16輸出。經由電感器17對驅動級放大電路11供給直流電力。經由電感器18對輸出級放大電路13供給直流電力。
圖1B是表示第一實施例的半導體裝置所包含的半導體晶片30的各電路的佈局的平面圖。在半導體基板40的表面形成阻抗匹配電路10、12、驅動級放大電路11、輸出級放大電路13、以及控制電路14。於形成有輸出級放大電路13的區域,設有在厚度方向貫通半導體基板40的貫通通孔41。
貫通通孔41如後述般,具有使在構成輸出級放大電路13的電晶體產生的熱有效地傳導到半導體晶片30的外部的功能。驅動級放大電路11的電晶體的發熱量,比輸出級放大電路13的電晶體的發熱量少。因此,較佳為與輸出級放大電路13對應地設置貫通通孔41。對於驅動級放大電路11,既可設置貫通通孔亦可以不設置。
圖1C是第一實施例的半導體裝置的概略剖視圖。在印刷基板20的構裝面(在圖1B中為上面)構裝半導體晶片30。半導體晶片30包含形成在半導體基板40的與印刷基板20對置的面(以下,稱為第一面。)的複數個凸塊31。印刷基板20包含形成在構裝面的複數個連接盤(land)21、以及形成在下面(與構裝面相反側的面)的外部連接用的複數個電極23。
複數個連接盤21中的至少一個為接地用的連接盤21,複數個電極23中的至少一個為接地用的電極23。接地用的連接盤21與接地用的電極23經由複數個通路導體24以及內層的佈線25電性連接。
半導體晶片30的凸塊31與印刷基板20的連接盤21連接。半導體晶片30的複數個凸塊31中至少一個為接地用的凸塊31,接地用的凸塊31與印刷基板20的接地用的連接盤21連接。半導體晶片30以密封樹脂28密封。
圖2A是在第一實施例的半導體裝置所包含的半導體晶片30上形成的輸出級放大電路13(圖1A)的平面圖。輸出級放大電路13例如包含相互並聯連接且排列成一列的四個電晶體42(有源元件)。以下,將電晶體42排列的方向稱作為「排列方向」。電晶體42例如是異質接面雙極性電晶體。
各個電晶體42包含射極電極E0、基極電極B0、以及集極電極C0。在圖2A中,對射極電極E0、基極電極B0、以及集極電極C0的區域附加影線(hatching)。若著眼於一個電晶體42,則於排列方向在射極電極E0的兩側分別配置有基極電極B0的一部分,進一步地在其兩側分別配置有集極電極C0。
配置在射極電極E0的兩側的基極電極B0的一部分係在射極電極E0的外側相互連續。例如,基極電極B0在俯視時從三個方向以U字形圍繞射極電極E0。彼此相鄰的電晶體42共用一個集極電極C0。
複數個第一層射極佈線E1分別配置為與複數個射極電極E0重疊。複數個第一層基極佈線B1分別與複數個基極電極B0的一部分重疊,並從重疊處拉出到外側。包含線狀部和複數個梳齒部的第一層集極佈線C1的複數個梳齒部,分別與複數個集極電極C0重疊。集極佈線C1的線狀部與集極電極C0鄰接,且於排列方向從配置一端的電晶體42的位置到達配置另一端的電晶體42的位置為止,並與複數個梳齒部的各個連接。
在與電晶體42不同的位置配置有熱傳導膜43。例如,從電晶體42來看,在與第一層集極佈線C1的線狀部相反側配置有熱傳導膜43。熱傳導膜43具有在排列方向較長的形狀,而於排列方向從配置一端的電晶體42的位置到達配置另一端的電晶體42的位置為止。熱傳導膜43係以與第一層基極佈線B1、射極佈線E1、以及集極佈線C1相同的金屬材料例如Au形成,並利用同一工序成膜。於俯視時在熱傳導膜43的內側配置有貫通通孔41。
第二層集極佈線C2配置為與第一層集極佈線C1的線狀部重疊。第二層射極佈線E2配置為與第一層射極佈線E1以及熱傳導膜43重疊。
在最上層配置有凸塊31。凸塊31在俯視時與第二層射極佈線E2重疊,並且與複數個射極電極E0以及熱傳導膜43部分重疊,或與複數個射極電極E0以及熱傳導膜43的整體重疊。
圖2B是圖2A的一點鏈線2B-2B上的剖視圖。在半導體基板40的上面(第一面)形成電晶體42。半導體基板40例如包含由半絕緣性的GaAs構成的支承基板、和在其上由磊晶成長而成的GaAs構成的磊晶成長層。對磊晶成長層中配置了電晶體42的區域賦予導電性,其它的區域為絕緣性。
電晶體42包含由集極層、基極層以及射極層構成的半導體台面(mesa)、基極電極B0以及射極電極E0。集極電極C0(圖2A)未顯現在圖2B的剖面中。在半導體基板40的上面上配置覆蓋電晶體42的SiN等絕緣膜45。在絕緣膜45上配置有第一層射極佈線E1、基極佈線B1、集極佈線C1、以及熱傳導膜43。第一層射極佈線E1以及基極佈線B1分別經由設置在絕緣膜45的開口內與射極電極E0以及基極電極B0連接。在圖2B所示的剖面中,在第一層集極佈線C1的正下方的絕緣膜45未設有開口。熱傳導膜43經由設置在絕緣膜45的開口內與半導體基板40的上面相接。
第一層射極佈線E1、基極佈線B1、集極佈線C1以及熱傳導膜43例如使用Au等金屬。熱傳導膜43所使用的金屬的熱傳導率比半導體基板40的熱傳導率高。
在絕緣膜45上配置絕緣膜46,以覆蓋第一層射極佈線E1、基極佈線B1、集極佈線C1、以及熱傳導膜43。絕緣膜46例如具有SiN膜與樹脂膜的雙層結構,絕緣膜46的上面被平坦化。如圖2B所示,電晶體42及熱傳導膜43分別被絕緣膜46部分覆蓋。
在絕緣膜46上配置第二層射極佈線E2以及第二層集極佈線C2。第二層射極佈線E2經由設置在絕緣膜46的開口內與第一層射極佈線E1連接,並且也經由其它的開口內與熱傳導膜43連接。第二層集極佈線C2經由設置在絕緣膜46的開口內與第一層集極佈線C1連接。
在絕緣膜46上配置絕緣膜47。在絕緣膜47設置使第二層射極佈線E2的一部分露出的開口,在開口內的第二層射極佈線E2上以及開口的周圍的絕緣膜47之上配置有凸塊31。凸塊31例如使用包含Cu柱32和設置在其上面的焊料凸塊33的Cu柱凸塊。經由射極佈線E2、E1與射極電極E0連接的凸塊31是接地用的凸塊。
在半導體基板40形成從其下面(第二面)到達熱傳導膜43的貫通通孔41。在俯視時,從半導體基板40的下面的與電晶體42重疊的區域到貫通通孔41的內面連續地配置有熱傳導構件51。作為熱傳導構件51,例如使用Au等金屬膜。作為一例,熱傳導構件51覆蓋半導體基板40的下面的整個區域,並覆蓋貫通通孔41的側面以及底面的整個區域。由於在貫通通孔41的底面露出熱傳導膜43,所以熱傳導構件51與熱傳導膜43接觸。
接下來,參照圖3對第一實施例的優異效果進行說明。
圖3是第一實施例的半導體裝置的凸塊31的附近的剖視圖。半導體晶片30的接地用的凸塊31與印刷基板20的接地用的連接盤21電性連接,並且機械性地固定。連接盤21經由設置在印刷基板20的內層的複數個佈線25以及複數個通路導體24,與形成在與構裝面相反側的面的外部連接用的電極23連接。
在電晶體42的運作時,工作電流流過在俯視時與射極電極E0重疊的半導體區域,從而產生熱。在俯視時,電晶體42的半導體區域中與射極電極E0重疊的部分成為發熱源48。關於半導體基板40的厚度方向,電晶體42的由集極層、基極層、以及射極層構成的區域成為發熱源48。在發熱源48產生,並流向與半導體基板40相反側的熱,通過由射極電極E0、射極佈線E1、E2以及凸塊31構成的熱路徑T0傳導至印刷基板20的連接盤21。
並且,在發熱源48產生的熱的一部分擴散到半導體基板40的內部。擴散到半導體基板40的內部的熱通過由半導體基板40、熱傳導構件51、熱傳導膜43、第二層射極佈線E2、以及凸塊31構成的熱路徑T1傳導至印刷基板20的連接盤21。
傳遞到印刷基板20的連接盤21的熱經由通路導體24以及佈線25,傳遞到外部連接用的電極23。電極23例如與主機板等較大的接地導體連接。因此,傳遞至電極23的熱,向相比於半導體晶片30具有較充分大的熱容量
的外部的接地導體排出。
在第一實施例中,在發熱源48產生並在半導體基板40往橫方向(與厚度方向正交的方向)擴散的熱,傳遞至覆蓋貫通通孔41的側面的熱傳導構件51,其後,傳遞至熱傳導膜43。在發熱源48產生且在半導體基板40向厚度方向擴散的熱,傳遞至覆蓋半導體基板40的與構裝面相反側的面的熱傳導構件51,其後,經由熱傳導構件51傳遞至熱傳導膜43。由於熱傳導構件51使用與半導體基板40相比熱傳導率較高的材料,所以與不配置熱傳導構件51的構成相比能夠使熱路徑T1的熱阻降低。
在第一實施例中,不僅熱路徑T0,擴散至半導體基板40內的熱經由熱路徑T1散熱到外部,所以能夠抑制電晶體42的溫度上升。由於熱傳導構件51與熱傳導膜43不經由絕緣材料或者半導體材料而直接接觸,所以能夠抑制熱路徑T1的熱阻的上升。因此,能夠經由熱路徑T1有效地進行散熱。
為了使熱路徑T1的熱阻降低,較佳為在俯視時,將貫通通孔41及熱傳導膜43至少部分重疊地配置在設於絕緣膜46的開口及凸塊31。進一步地,較佳為在俯視時,將印刷基板20的接地用的連接盤21與接地用的電極23至少部分重疊地配置。在此,「至少部分重疊」是指在俯視時,使一方的構件的一部分與另一方的構件的一部分重疊的狀態、使一方的構件的整個區域與另一方的構件的一部分重疊的狀態、以及使一方的構件的整個區域與另一方的構件的整個區域重疊的狀態的任一種。較佳為使用與其它凸塊相比具有較大面積的接地用凸塊作為構成熱路徑T1的一部分的凸塊31。
接下來,對第一實施例的變形例進行說明。
雖然在第一實施例中,例如使用由GaAs構成的基板作為半導體基板40,但也可以使用由其它的半導體構成的基板,也可以使用能磊晶成長有源元件的半導體區域的絕緣性基板。另外,雖然在第一實施例中,使用異質接面雙極性電
晶體作為電晶體42,但也可以使用其它的有源元件,例如MIS電晶體、MES電晶體、高電子遷移率電晶體(HEMT)等。另外,雖然在第一實施例中,使用Cu柱凸塊作為凸塊31,但也可以使用其它的結構的凸塊。
〔第二實施例〕
接下來,參照圖4對第二實施例的半導體裝置進行說明。以下,省略說明關於與第一實施例的半導體裝置(圖1A~圖2B)相同的構成。
圖4是第二實施例的半導體裝置所包含的半導體晶片的剖視圖。在第一實施例中,貫通通孔41(圖2B)的側面和底面被熱傳導構件51覆蓋,貫通通孔41內的剩餘的部分為空洞,或者以密封樹脂(圖1C)填充。在第二實施例中,在貫通通孔41內的剩餘的部分埋入熱傳導性膏體49。在此,「埋入」不是指貫通通孔41內的空間完全被熱傳導性膏體49所填充。例如,即使在熱傳導性膏體49的表面稍微凹陷的情況下,也能夠稱作為「埋入」。
熱傳導性膏體49的熱傳導率比密封樹脂28的熱傳導率高。作為熱傳導性膏體49,能夠使用使金屬或者陶瓷的粉末分散到膏體狀物質的膏體。膏體狀物質例如能夠使用環氧樹脂等樹脂。金屬、陶瓷的粉末例如能夠使用銀、SiC、AlN等。「膏體」一般而言是指具有流動性和較高的黏性的物質,但在本說明書中,膏體通過加熱等固化後的物體也稱作為「膏體」。
接下來,對第二實施例的優異效果進行說明。在第二實施例中,貫通通孔41內的熱傳導性膏體49作為熱路徑T1(圖3)的一部分發揮作用。因此,熱路徑T1的剖面積增大,熱阻降低。其結果,能夠提高經由熱路徑T1的熱傳導的效率。
熱傳導性膏體49即使在固化後,也具有比半導體基板40低的楊氏模量(Young's modulus)。熱傳導性膏體49根據半導體基板40的熱變形而柔軟地變形,所以與在貫通通孔41內填充金屬構件的構成相比,能夠得到即使半導
體基板40熱變形,半導體晶片30也不容易受到損傷的效果。
〔第三實施例〕
接下來,參照圖5A以及圖5B,對第三實施例的半導體裝置進行說明。以下,省略說明關於與第一實施例的半導體裝置(圖1A~圖2B)相同的構成。
圖5A是在第三實施例的半導體裝置所包含的半導體晶片30上形成的輸出級放大電路13(圖1A)平面圖。圖5B是圖5A的一點鏈線5B-5B上的剖視圖。在第三實施例中,在半導體基板40的底面形成凹部60。凹部60未達到半導體基板40的上面。在俯視時,凹部60與電晶體42至少部分重疊,並在凹部60的區域內配置貫通通孔41。在圖5A中,示出在俯視時電晶體42配置在凹部60的內部的例子。貫通通孔41從凹部60的底面到達熱傳導膜43。
半導體基板40的下面、凹部60的側面和底面以及貫通通孔41的側面和底面以熱傳導構件51覆蓋。
接下來,對第三實施例的優異效果進行說明。在第三實施例中,由於在半導體基板40形成凹部60,所以在半導體基板40的厚度方向從發熱源48至熱傳導構件51的距離與第一實施例的情況相比變短。由於熱路徑T1縮短而熱阻降低,所以能夠提高通過了熱路徑T1的熱傳導的效率。雖然若使半導體基板40變薄,則半導體晶片30的機械強度降低,但在第三實施例中,在作為熱路徑T1發揮作用的區域以外,並未使半導體基板40變薄。因此,能夠維持半導體晶片30的足夠的機械強度。
熱傳導構件51的熱導率與半導體基板40的熱導率相比能夠視為足夠高。此時,為了得到使熱路徑T1的熱阻降低所帶來的充分的效果,較佳為使從發熱源48到凹部60的底面的距離L2比從發熱源48到貫通通孔41的橫向的距離L1短。可將從發熱源48到貫通通孔41的距離L1的起始點定義為射極電極E0的端部。可將從發熱源48到凹部60的底面的距離L2的起始點定義為構成電晶體42
的集極層的下面。
〔第四實施例〕
接下來,參照圖6,對第四實施例的半導體裝置進行說明。以下,省略說明與第三實施例的半導體裝置(圖5A、圖5B)相同的構成。
圖6是第四實施例的半導體裝置所包含的半導體晶片30的剖視圖。在第四實施例中,凹部60以及貫通通孔41的內部埋入熱傳導性膏體61。作為熱傳導性膏體61,例如使用與第二實施例的半導體裝置所使用的熱傳導性膏體49(圖4)相同的膏體即可。
接下來,對第四實施例的優異效果進行說明。在第四實施例中,凹部60以及貫通通孔41的內部埋入熱傳導性膏體61,所以與第二實施例相同,能夠提高熱傳導的效率。其結果,能夠抑制電晶體42的溫度上升。
另外,熱傳導性膏體61即使在固化後,也具有比半導體基板40低的楊氏模量。熱傳導性膏體61根據半導體基板40的熱變形而柔軟地變形,所以與在貫通通孔41和凹部60的內部填充金屬構件的構成相比,能夠得到即使半導體基板40熱變形半導體晶片30也不容易受到損傷的效果。
並且,通過埋入到凹部60的熱傳導性膏體61,能夠補償由於設置凹部60而半導體基板40變薄的部分的機械強度的降低。由此,能夠抑制在晶片切割等加工工序施加機械應力所引起的半導體晶片的破損。
〔第五實施例〕
接下來,參照圖7A以及圖7B,對第五實施例的半導體裝置進行說明。以下,省略說明關於與第一實施例的半導體裝置(圖1A~圖2B)相同的構成。
圖7A是第五實施例的半導體裝置所包含的半導體晶片30的剖視圖。在第一實施例中在半導體基板40設置從下面到達上面的熱傳導膜43(圖2B)的貫通通孔41。在第五實施例中,未設置貫通通孔,而在半導體基板40的
下面設置不到達上面的凹部60。凹部60的側面以及底面被熱傳導構件51覆蓋。在俯視時,凹部60與電晶體42的射極電極E0以及熱傳導膜43至少部分重疊。配置在凹部60的底面的熱傳導構件51與熱傳導膜43隔著半導體基板40的一部分對置而並不接觸。在凹部60埋入有密封樹脂28(圖1C)。
圖7B是表示第五實施例的半導體裝置的各電路的佈局的平面圖。在第一實施例中,在配置了輸出級放大電路13的區域配置貫通通孔41(圖1B)。在第五實施例中,將凹部60配置為在內部包含輸出級放大電路13。
接下來,對第五實施例的優異效果進行說明。在第五實施例中,與第一實施例的熱路徑T0(圖3)相同,形成如下的熱路徑T0,亦即,從發熱源48經由射極電極E0、以及射極佈線E1、E2到達凸塊31。除此之外,形成如下的熱路徑T2,亦即,從發熱源48在半導體基板40往橫方向傳遞,並經由熱傳導膜43、第二層射極佈線E2到達凸塊31。進一步地,形成如下的熱路徑T3,亦即,在發熱源48產生的熱在半導體基板40向厚度方向進行擴散,在熱傳導構件51往橫方向傳導,其後,於半導體基板40向厚度方向傳導並到達凸塊31。
構成熱路徑T3的一部分的熱傳導構件51的熱傳導率比半導體基板40的熱傳導率高。另外,若設置凹部60,則熱路徑T3中由熱傳導率較低的半導體基板40構成的部分較短。因此,熱路徑T3的熱阻降低,能夠提高經由熱路徑T3的熱傳導的效率。
若使半導體基板40的整體變薄,則不能夠確保足夠的機械強度。在第五實施例中,在作為熱路徑T3發揮作用的區域以外,並未使半導體基板40變薄。因此,能夠維持半導體晶片30的足夠的機械強度。
〔第六實施例〕
接下來,參照圖8對第六實施例的半導體裝置進行說明。以下,省略說明關於與第五實施例的半導體裝置(圖7A、圖7B)相同的構成。
圖8是第六實施例的半導體裝置所包含的半導體晶片30的剖視圖。在第五實施例中,在俯視時凹部60(圖7A)與發熱源48以及熱傳導膜43雙方至少部分重疊。在第六實施例中,凹部60並不限定於與發熱源48以及熱傳導膜43雙方重疊。在圖8中,示出在俯視時凹部60與發熱源48重疊,而不與熱傳導膜43重疊的例子。凹部60配置為在俯視時與被發熱源48和熱傳導膜43夾持著的區域部分重疊。
在第六實施例中,熱傳導構件51也構成使在發熱源48產生並向半導體基板40擴散的熱傳導至凸塊31的熱路徑的一部分。
接下來,對凹部60、發熱源48、以及熱傳導膜43的較佳的相對位置關係進行說明。以L3表示從發熱源48到配置在凹部60的底面的熱傳導構件51為止的最短距離。以L4表示從熱傳導膜43到熱傳導構件51為止的最短距離。以L5表示在俯視時,從發熱源48的幾何學的重心位置到熱傳導膜43為止的最短距離。熱傳導構件51的熱導率與半導體基板40的熱導率相比能夠視為足夠高。此時,為了得到形成凹部60並配置熱傳導構件51所帶來的充分的效果,較佳為將凹部60的位置以及深度設定為L3+L4在L5以下。
〔第七實施例〕
接下來,參照圖9對第七實施例的半導體裝置進行說明。以下,省略說明關於與第五實施例的半導體裝置(圖7A、圖7B)相同的構成。
圖9是第七實施例的半導體裝置所包含的半導體晶片30的剖視圖。在第五實施例中,將半導體晶片30構裝於印刷基板20(圖1C)之後,在凹部60的內部埋入密封樹脂28(圖1C)。在第七實施例中,凹部60的內部埋入熱傳導性膏體62。熱傳導性膏體62例如能夠使用與第二實施例的半導體裝置所使用的熱傳導性膏體49(圖4)相同的膏體。
接下來,對第七實施例的優異效果進行說明。在第七實施例
中,熱傳導性膏體62具有使熱路徑T3中在熱傳導構件51向橫向延伸的部分的剖面積擴大的作用。因此,熱路徑T3的熱阻降低,能夠提高經由熱路徑T3的熱傳導的效率。其结果,能夠抑制晶體管42的溫度上升。
另外,通過埋入凹部60的熱傳導性膏體62,能夠補償由於設置凹部60而半導體基板40變薄的部分的機械強度的降低。由此,能夠抑制在晶片切割等加工工序施加機械應力所引起的半導體基板40的破損。
上述的各實施例為例示,當然能夠進行不同的實施例所示的構成的部分的置換或者組合。關於由複數個實施例的相同構成所帶來的相同作用效果,不於各個實施例中逐一提及。進一步地,本發明並不侷限於上述的實施例。例如,本發明所屬技術領域中具有通常知識者顯而易知可進行各種的變更、改良、組合等。
30‧‧‧半導體晶片
31‧‧‧凸塊
41‧‧‧貫通通孔
42‧‧‧電晶體(有源元件)
43‧‧‧熱傳導膜
B0‧‧‧基極電極
B1‧‧‧第一層基極佈線
C0‧‧‧集極電極
C1‧‧‧第一層集極佈線
C2‧‧‧第二層集極佈線
E0‧‧‧射極電極
E1‧‧‧第一層射極佈線
E2‧‧‧第二層集極佈線
Claims (11)
- 一種半導體裝置,其具有:印刷基板,其在構裝面設置有連接盤;以及半導體晶片,其構裝於上述印刷基板,上述半導體晶片具有:有源元件,其形成在基板的與上述印刷基板對置的第一面;熱傳導膜,其設置在上述基板的上述第一面的與上述有源元件不同的位置,且由熱傳導率比上述基板高的材料構成;絕緣膜,其配置在上述基板的上述第一面之上,部分覆蓋上述有源元件以及上述熱傳導膜;凸塊,其配置在上述絕緣膜之上,與上述熱傳導膜電性連接;貫通通孔,其從上述基板的與上述第一面相反側的第二面到達上述熱傳導膜;以及熱傳導構件,其從在俯視時與上述有源元件重疊的上述第二面的區域連續地配置至上述貫通通孔的內面,且由熱傳導率比上述基板高的材料構成,上述凸塊與上述連接盤連接,上述半導體晶片以密封樹脂密封。
- 根據請求項1所述的半導體裝置,其中,上述凸塊和上述熱傳導膜被配置為在俯視時至少部分重疊。
- 根據請求項1所述的半導體裝置,其中,上述半導體晶片還具有形成在上述基板的上述第二面的凹部,上述凹部在俯視時與上述有源元件至少部分重疊,並在上述凹部的區域內配置有上述貫通通孔,在上述凹部的內面配置有上述熱傳導構件。
- 根據請求項2所述的半導體裝置,其中,上述半導體晶片還具有形成在上述基板的上述第二面的凹部, 上述凹部在俯視時與上述有源元件至少部分重疊,並在上述凹部的區域內配置有上述貫通通孔,在上述凹部的內面配置有上述熱傳導構件。
- 根據請求項1~4中任一項所述的半導體裝置,其中,上述熱傳導構件覆蓋上述貫通通孔的內面,上述半導體裝置進一步具有埋入上述貫通通孔的內部的熱傳導性膏體。
- 根據請求項3或4所述的半導體裝置,其中,上述熱傳導構件覆蓋上述貫通通孔以及上述凹部的內面,上述半導體裝置進一步具有埋入上述貫通通孔的內部以及上述凹部的內部的熱傳導性膏體。
- 一種半導體裝置,其具有:有源元件,其形成在基板的第一面;熱傳導膜,其設置在上述基板的上述第一面的與上述有源元件不同的位置,且由熱傳導率比上述基板高的材料構成;絕緣膜,其配置在上述基板的上述第一面之上,部分覆蓋上述有源元件以及上述熱傳導膜;凸塊,其配置在上述絕緣膜之上,與上述熱傳導膜電性連接;凹部,其設置在上述基板的與上述第一面相反側的第二面,且在俯視時與上述有源元件以及上述熱傳導膜至少部分重疊;以及熱傳導構件,其設置在上述凹部的內面,且由熱傳導率比上述基板高的材料構成,配置在上述凹部的底面的上述熱傳導構件與上述熱傳導膜,隔著上述基板的一部分而對置。
- 根據請求項7所述的半導體裝置,其中,上述凸塊與上述熱傳導膜被配置為在俯視時至少部分重疊。
- 根據請求項7所述的半導體裝置,其中,上述半導體裝置還具有埋入上述凹部的內部的熱傳導性膏體。
- 根據請求項8所述的半導體裝置,其中,上述半導體裝置還具有埋入上述凹部的內部的熱傳導性膏體。
- 根據請求項7~10中任一項所述的半導體裝置,其中,從上述有源元件的發熱源到上述熱傳導構件的最短距離,與從上述熱傳導膜到上述熱傳導構件的最短距離之和,為從上述發熱源到上述熱傳導膜的距離以下。
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