CN1784807A - 同轴波导微结构及其形成方法 - Google Patents

同轴波导微结构及其形成方法 Download PDF

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CN1784807A
CN1784807A CNA2004800120120A CN200480012012A CN1784807A CN 1784807 A CN1784807 A CN 1784807A CN A2004800120120 A CNA2004800120120 A CN A2004800120120A CN 200480012012 A CN200480012012 A CN 200480012012A CN 1784807 A CN1784807 A CN 1784807A
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coaxial waveguide
waveguide
center conductor
microstructures
conductor
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CN1784807B (zh
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D·W·谢勒
J·J·费希尔
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Rohm and Haas Electronic Materials LLC
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    • H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
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Abstract

提供了一种同轴波导微结构。该微结构包括基片和位于该基片之上的同轴波导。该同轴波导包括：中心导体；包括一个或多个壁的外导体，该外导体与中心导体有一定间隔且设置于中心导体周围；用来支承中心导体的一个或多个绝缘支承部件，所述支承部件与中心导体接触，封装在外导体之内；以及中心导体与外导体之间的芯体积，所述芯体积处于真空或气态状态下。还提供了通过顺序构建顺序构建工艺形成同轴波导微结构的方法，以及包括同轴波导微结构的密封外壳。

Description

同轴波导微结构及其形成方法
                       相关申请交叉引用
本申请根据35U.S.C.§199(e)要求2003年3月4日提交的美国临时申请第60/452,073号和2003年5月29日提交的第60/474,549号的优先权，这些申请的全文纳入本文作为参考。
                          技术领域
本发明一般地涉及微加工技术和电子器件。本发明更具体地涉及同轴波导微结构和形成这些微结构的方法，还涉及包括这些微结构的电子器件。
                          背景技术
在例如国际申请出版物第WO 00/39854号(WO’854)中描述了以顺序构建工艺形成的同轴波导微结构。参照图1A，WO’854揭示了以顺序构建工艺形成的同轴波导微结构100。该微结构包括：绝缘基片102；形成于基片102上的金属接地线104，该接地线是隔开的，被分为两部分；形成于绝缘基片表面、分开的接地线104之间的金属支架106；位于支架106之上、用于传输信号的信号线108；形成于接地线上的接地壁110；以及形成于接地壁110之上的接地线112。这种同轴波导微结构具有各种缺点。例如，用金属支架支承信号线会在一定程度上导致传播的波的反射，从而产生信号干扰。另外，由于例如需要将金属连接在绝缘基片上作为支承装置，不能容易地调整该方法使之具有预定的多个同轴层结构的叠加的结构。在例如交叉(crossovers)和用于实现复杂分布网络时，需要叠层结构。另外，在该已知结构中不能灵活选择基片材料，而是限于绝缘材料以达到相似的波导性能。另外，由于支架与基片必不可少的机械连接，同轴波导结构不能与基片分离。
在例如国际申请出版物第WO 00/39854号(WO’854)中描述了以顺序构建工艺形成的同轴波导微结构。参照图1A，WO’854揭示了以顺序构建工艺形成的同轴波导微结构100。该微结构包括：绝缘基片102；形成于基片102上的金属接地线104，该接地线是隔开的并被分为两部分；形成于绝缘基片表面、分开的接地线104之间的金属支架106；位于支架106之上、用于传输信号的信号线108；形成于接地线上的接地壁110；以及形成于接地壁110之上的接地线112和空气或真空芯体积。这种同轴波导微结构具有各种缺点。例如，用金属支架支承信号线会在一定程度上反射传播的波，从而产生信号干扰。另外，由于例如需要将金属支架连接到绝缘基片上作为支承装置，不能容易地使该方法调整具有多个预定同轴层结构的重叠的结构。另外，不能灵活选择基片材料，而是限于绝缘材料。另外，由于支架与基片必不可少的连接，不能将同轴波导结构与基片分离。
图1B说明WO’854中所揭示的另一种同轴波导微结构。该微结构114包括：半导体基片114；第一和第二接地线118、120；绝缘支架122和信号线124。该半导体具有凹槽，第一接地线形成于基片表面和凹槽表面上。这样，形成信号线差不多与半导体基片的表面等高。从而容易地与形成在半导体基片上的其它连接件相连接。然而，该结构也具有各种缺点。例如，不能调整该工艺使之适于多同轴层结构，这是由于凹陷基片的需要、波导结构的几何形状和需要在平面基片上具有凹槽，以达到所必须的平面化。最后不是很清楚该结构可自支撑、从而从基片上移去，而这在例如叠层同轴网络中是很有用的。
因此需要有改进的用于形成同轴波导微结构的方法，以克服或显著改善上述相关领域中的一个或多个问题。
                          发明概述
根据本发明的第一个方面，提供了同轴波导微结构。该微结构包括基片和配制在基片上的同轴波导。该同轴波导包括：中心导体；包括一个或多个壁的外导体，该外导体与中心导体有一定间隔，且设置于中心导体周围；用来支承中心导体的一个或多个绝缘支承部件，该支承部件与中心导体接触，封装在外导体之内；以及在中心导体与外导体之间的芯体积，其中芯体积处于真空或气态状态下。
根据本发明的另一个方面，提供了通过顺序构建工艺形成同轴波导微结构的方法。该方法包括：(a)在基片上沉积多个层，这些层包含金属材料、牺牲性光致抗蚀材料和绝缘材料中的一种或多种，从而在基片上形成一种结构，该结构包括：中心导体；包括一个或多个壁的外导体，该外导体与中心导体有一定间隔，且设置于中心导体周围；用来支承中心导体的一个或多个绝缘支承部件，该支承部件与中心导体接触，封装在外导体之内；以及中心导体与外导体之间的芯体积，其中所述芯体积包括牺牲性光致抗蚀剂；以及(b)从芯体积中除去牺牲性光致抗蚀剂。
回顾以下的说明书、权利要求书及其附图，本发明的其它特征和优点对本领域的技术人员将是显而易见的。
                          附图简述
参照以下附图讨论本发明，图中相同的参考编号表示相同的特征，其中：
图1A-B是说明已知同轴波导微结构的横截面图；
图2-13是说明第一示例性同轴波导微结构，在本发明的不同形成阶段的横截面图和俯视图；
图14-26是说明第二示例性同轴波导微结构，在本发明的不同形成阶段的横截面图和俯视图；
图27和28各自是说明在本发明的叠层结构中，多个第一和第二示例性同轴波导微结构的横截面图；
图29-31是说明根据本发明，在叠层结构中、并由通路连接的示例性波导微结构的横截面图；
图32说明根据本发明的两个以单独或功率耦合器形式的波导；
图33A-B说明本发明用于在同轴和非同轴波导微结构之间转换的示例性结构；
图34说明本发明的通过挠性结构固定在基片上的示例性波导微结构。
图35说明本发明的用于防止共轴波导微结构沾污的示例性遮盖结构。
图36-38说明本发明的用于波导微结构互联的各种示例性结构；
图39说明本发明的其上固定有焊料的示例性同轴波导微结构。
                          发明详述
以下将描述的示例性工艺，包括用于制造微结构的顺序构建，所述微结构包含金属、绝缘和气体或真空气氛。在顺序构建工艺中，通过以规定的方法按顺序形成各种金属的层的一种结构。当进行平板印刷图案形成(patterning)和其它任选的工艺时，例如平面化技术，提供了形成多种元件灵活的方法(例如举例的悬空的(suspended)同轴波导微结构)。
所述顺序构建工艺通常是通过一个或多个以下过程完成：(a)金属涂层、牺牲性光致抗蚀涂层和绝缘涂层过程；(b)表面平面化；(c)光蚀刻；和(d)蚀刻或其它层去除法。沉积金属时，发现电镀技术特别有效，但是也可采用其它金属沉积技术，例如物理蒸汽沉积(PVD)和化学蒸汽沉积(CVD)技术。下文将描述包括电镀技术的典型的顺序构建工艺。
在将要电镀金属的所有位置形成任选图案的、导电的基层或籽晶层(seedlayer)。图案形成可通过例如在导体基层或籽晶层上选择性沉积来完成，例如通过阴影掩模，用保护层和蚀刻剂蚀刻籽晶，或在籽晶层上施加薄的钝化作用，例如薄的永久性绝缘体，这些方法在籽晶层上电镀的领域中是已知的。通过涂层和形成图案，在基层或籽晶层上形成了光致抗蚀图案或铸模。然后在基层或籽晶层暴露出来的所有区域电镀金属结构，直至达到所需厚度。对所得的结构进行任选的平面化处理以消除来自因实施后续工艺引起的明显的厚度差异。
可在后续工艺中所需的点沉积一层或多层的绝缘层。例如，如果需要在随后的电镀步骤中在暴露的绝缘材料上电镀金属，可以在形成籽晶层之前形成绝缘层；或者如果需要防止在暴露的绝缘材料上电镀，则在形成籽晶层之后形成绝缘层。可通过例如旋涂和对绝缘体的图案形成，从而形成绝缘层。当形成图案的层不会对形成于其上的保护层产生不利影响时，例如当形成图案的绝缘体的厚度(例如，几微米)显著小于形成于其上的保护层的厚度(例如，100微米)时，该技术是有用的。另一种形成绝缘特征的技术包括以一种方法在基层或籽晶层上预先形成图案，形成保护图案/铸模之后，金属不在基层的一些区域形成，而是留下空穴，这些空穴可以随后被绝缘材料填充。在此情况下，绝缘材料通常填至与抗蚀模具相平或高于抗蚀模具，并对其与保护层和任何金属进行平面化，从而在下一个的后续工艺开始之前制造出平面层。
当所有结构层都已制造出之后，从结构中除去牺牲性保护膜，将包括绝缘体在内的其它材料留在原处。这可通过使用溶剂或展开剂来完成，保护膜可溶于这些溶剂或展开剂中，而其它材料在其中不溶或相对不溶。可能需要任选的精饰步骤，例如化学抛光和/或外层镀膜。
接下来将参照图2-13描述本发明的方法和装置，这些图显示本发明一个方面的示例性同轴波导微结构，不同形成阶段的横截面图和俯视图。这些同轴波导可有效地传输射频(RF)能量，例如几MHz至100GHz或更高，例如毫米波和微波，以及DC信号。
参考图2，波导在基片2上形成，基片2可为例如陶瓷、半导体、金属或聚合物。该基片可以是例如印刷电路板或半导体基片，例如硅晶片或砷化镓晶片。基片的膨胀系数可与用于形成波导的材料近似，应对其进行选择，以便在形成波导过程中保持其完整。另外，在其上形成波导的基片2的表面通常是平面的。可对基片的表面进行例如磨平和/或抛光，以达到高度平面性。在过程中可在任意层的形成之前或之后，对所形成结构的表面进行平面化处理。通常使用常规的平面化技术，例如化学机械抛光(CMP)、磨平或这些方法的组合。也可另外或作为替代地使用其它已知的平面化技术，例如机械加工、金刚石车削、等离子体蚀刻、激光烧蚀等之类的机械精加工。
在基片2上沉积基层4，最终波导结构中形成波导外导体的底壁。基层4可由高导电性的材料形成，如金属或金属合金(共同地称为“金属”)，例如铜、镍、铝、铬、金、钛及它们的合金；掺杂的半导体材料；或它们的组合，例如这些材料的多层。基层4用常规工艺沉积，例如电镀或化学镀膜之类的镀膜法、喷镀之类的物理蒸汽沉积法(PVD)或化学蒸汽沉积法(CVD)。认为镀敷的铜特别适合用作基层材料，这些技术在本领域是充分理解的。所述镀膜可例如使用铜盐和还原剂的化学法。合适的材料可在市场上购得，包括例如可购自Rohm andHaas Electronic Materials，L.L.C.，Marlborough，MA.的CIRCUPOSITTM无电铜。或者也可采用导电籽晶层、然后进行电镀来镀敷这些金属。合适的电解材料可在市场上购得，包括例如可购自L.L.C.的Rohm and Haas Electronic Materials的COPPER GLEAMTM酸镀膜产品。也可采用活化的催化剂，然后进行电沉积。通过概述的方法基层(和随后的层)上形成图案成为适宜的几何形状，从而制得所需的装置结构。
对基层(以及随后形成的波导外导体的其它壁)的厚度的厚度进行选择，从而为波导提供机械稳定性，并为在移过波导的电子提供足够的导电性。在非常高的频率，结构和热导率的影响变得更加显著，表层深度通常小于1微米。因此厚度将取决于例如具体的基层材料、将要传输的具体频率，以及用于何种用途。例如要把最终结构从基片上移去的情况下，为了结构完整性，使用较厚的基层可能是有益的，例如从约20-150微米或20-80微米。在最终结构于基片保持接触处，需要使用较薄的基层，可由所用频率对表层深度的要求决定。接下来可用上述的技术任选地对基层4进行平面化。
参照图3，在基层4上沉积了光致抗蚀层6，并对其进行曝光和显像，形成用于随后沉积波导外导体下部侧壁部分的图案8。所述图案8包括保护层中的两道平行沟槽，暴露着基层4的顶面。常规的光蚀刻步骤和材料可用于该目的。所述保护层可为阳性或阴性保护层，例如可购自Rohm and Haas ElectronicMaterials，L.L.C.的Shipley BPRTM-100、PHOTOPOSITTM SP或PHOTOSITTM SN；或干片，例如同样可购自Rohm and Haas Electronic Materials，L.L.C.的LAMINARTM干片。
如图4所示，接下来形成波导外导体的较低侧壁部分10。适于形成侧壁的材料和技术与前述的用于基层的相同。侧壁通常以与基层4相同的材料形成，但也可使用不同的材料。在镀膜过程中，可省去籽晶层或镀基(plating base)，此时在随后的步骤中仅将金属直接施用在此前形成的、暴露的金属区域。，然而应当明确，图中所示的示例性结构通常仅构成了具体装置的一小部分，在后续工艺中可在任一层上开始对这些或其它结构喷镀金属，在这些情况下通常使用籽晶层。
在此阶段可进行表面平面化处理，除了为随后的步骤提供平的表面以外，还除去沉积在保护层表面上的不希望有的金属。通过表面平面化，可比仅通过涂布达到的层厚度更严格地控制特定层的总厚度。例如可采用CMP法将金属和保护层平面化至相同的程度，随后可进行例如磨平步骤，该步骤以相同的速率缓慢地除去金属、保护膜和任意绝缘体，从而更好地控制层最终的厚度。
如图5所示，接下来在保护层6和较低侧壁部分10上沉积绝缘材料支承层12。在随后的加工中，从支承层12对支承结构形成图案，以支承将要形成的波导中心导体。由于这些结构将位于最终波导结构的芯区中，应当用一种材料形成支承层12，从而支承结构对通过波导传输的能量不会产生过多的损失。这种材料也应能够为支承中心导体提供所需的机械强度，并应当相对不溶于用来从最终波导结构中除去牺牲性保护膜的溶剂。所属支撑层12材料通常选自以下的绝缘材料：无机材料，例如硅土和氧化硅、SOL凝胶、各种玻璃、氮化硅(Si3N4)、矾土(Al2O3)之类的氧化铝、氮化铝(AlN)和氧化镁(MgO)；有机材料，例如聚乙烯、聚酯、聚碳酸酯、乙酸纤维素、聚丙烯、聚氯乙烯、聚偏氯乙烯、聚苯乙烯、聚酰胺和聚酰亚胺；有机-无机杂化材料，例如有机倍半硅氧烷材料；可光确定的(photodefinable)绝缘体，例如起副作用的光致抗蚀剂或不会被将要进行的牺牲性保护膜去除工艺所浸蚀的光环氧化合物。宜采用那些可以方便地用旋涂、辊涂、揉搓涂布、喷涂、化学蒸汽沉积(CVD)或层压等方法沉积的材料。支承层12沉积至一厚度，从而为中心导体提供必需的支承，而不产生裂纹或破裂。另外，从平面性的立足点来看，厚度不应对随后的保护层的施涂产生严重的影响。
参考图6，接下来用标准的光蚀刻和蚀刻技术在支承层上形成图案，以提供多个导体支架12’。多个导体支架12’可与两个下部侧壁部分10结合。各支架的一端形成于一个或其它较低侧壁部分10之上，另一端延伸至保护层6之上的侧壁部分10之间的位置。各侧壁部分上的支架12’互相间隔开，距离间隔通常是固定的。在一个侧壁部分上的那些通常与在相对侧壁部分上的那些相错开，从而不会直接相对。在另一实施方式中，支架部件12’可以从一个侧壁部分10延伸至其它。支架12’的数量、形状和排列方式应在防止信号过度损失的同时为中心导体提供支撑。另外，应对形状和周期性或非周期性进行选择，以防在需要低损失传输的频率处反射，这可利用在制造布拉格光栅或滤光片的领域中已知的方法计算，除非需要这样的功能。
参考图7，保护层6’沉积在基片上，并曝光显像形成图案14和16，用于随后分别在波导的外导体和中心导体的中间侧壁部分的沉积。中间侧壁部分的图案包括两条与两个较低侧壁部分10同延的沟槽。所属较低侧壁部分10和导体支架12’位于较低侧壁部分之上的末端被图案14暴露。用于中心导体的图案16是与所述两条中间侧壁图案相平行并处于这两条中间侧壁之间的沟槽，暴露着导体支架12’部分的相对端和支承部分。上面所述的常规光蚀刻步骤和材料可用于该目的。
如图8所示，接下来通过向保护层6’形成的沟槽内沉淀合适的材料，形成外导体和中心导体20的中间侧壁部分18。适用于形成所述中间侧壁部分18和中心导体20的材料和技术，与那些上面提到的用于基层4和较低侧壁部分10的相同，但也可使用不同的材料和/或技术。如前文所述，在此阶段可任选地进行表面平面化处理，除了为随后的步骤提供平的表面以外，还除去沉积在保护层表面上的不希望有的金属，并任选地施用于任意的层或所有的层。
参考图9，将保护层6”沉积在基片上，并通过曝光和显像形成图案22，用于对外导体上部侧壁部分随后的沉积。用于中间侧壁部分的图案22包括与所述两个中间侧壁部分18同延的凹槽。可将如上所述的常规光蚀刻步骤和方法用于该目的。
如图10所示，接下来通过向保护层6”形成的沟槽内沉淀合适的材料，形成外导体的上部侧壁部分24。适用于形成所述上部侧壁的材料和技术与那些上面提到的用于基层和其它侧壁部分的相同。上部侧壁24通常与用于形成基层和其它侧壁相同的材料和技术形成，但也可使用其它材料和/或技术。在此阶段可任选地进行表面平面化处理，除了为随后的加工提供平的表面以外，还除去沉积在保护膜表面上的所有不希望有的金属。
参考图11，将保护层6沉积在基片上，并通过曝光和显像形成图案26，用于随后对波导外导体顶壁的沉积。用于顶壁的图案26暴露了上部侧壁24及其之间的部分。任选的，保护层6的图案形成也可在上部侧壁部分24之间产生一个或多个保护层6的区域。这些剩余的部分可为例如保护层支柱(pillars)31的形式。将防止外导体顶壁在这些区剩余保护层6区域随后的沉积。如下更详细的描述，这导致使最后沉积的外导体顶壁上具有开口，使得最终结构上的保护膜更易除去。
如图12所示，接下来通过在所述上部侧壁部分24之上和之间的暴露区域沉积合适的材料，形成了外导体的顶壁28。可以看到，避免在保护层支柱31所占据的体积和保护层支柱31之上沉积。适用于形成所述顶壁的材料和技术，与那些上面提到的用于基层和侧壁部分的相同。顶壁28通常以与用于形成基层和其它侧壁相同的材料和技术形成，但也可使用其它材料和/或技术。在此阶段可任选地进行表面平面化处理。
完成了波导的基本结构，接下来将添加另外的层、或除去结构中残留的保护层。可根据所用保护膜的类型，用已知的溶剂或脱膜剂除去保护膜。为了从结构中除去保护膜，溶剂必须与保护膜接触。保护膜暴露于波导结构的端面。也可在波导中提供如上图11-12所述的另外的开口，以促进在整个结构中溶剂与保护膜的接触。考虑了其它使保护膜与溶剂接触的结构。例如可在形成图案过程中，在波导侧壁上形成开口。可对这些缺口的尺寸进行选择，使得对所导的波的干涉、散射或漏泄最小。这些尺寸可选为例如小于所用最高频率波长的1/8或1/10。
图13显示了除去牺牲性保护层之后的最终波导结构32。位于波导外壁之内、由牺牲性保护层先前所占据的空间形成了波导芯30。该体积通常由空气占据。然而，也考虑了可将绝缘性质好于空气的气体用于芯中，或在其中制造真空，例如当该结构形成气密封装的一部分时。结果，可以减少对水蒸气的吸收，否则(otherwise)水蒸气会吸附在波导表面。
应注意上述的同轴波导微结构是示例性的，可考虑其它结构。例如，图14-26说明了另外的示例性波导结构，该波导结构采用了不同的中心导体支承结构。上面对于图2-13的描述可一般地施用于本实施方式，其不同之处列于下文。
如图15所示，通过在基层4上沉积钝化层9形成了导体支承部件。所述钝化层是一种材料，导体材料在此材料之上制成波导壁，而导体不沉积在此材料上。适用于钝化层的材料包括，例如可光确定的绝缘体，例如起负作用的光致抗蚀剂或不会被将要进行的牺牲性保护膜去除工艺所浸蚀的光环氧化合物。所述钝化层也可为用于在随后步骤中填充间隙的结构绝缘体的较薄形式。可用已知方法形成钝化层，例如旋涂、辊涂或蒸汽沉积。
接下来用标准的光蚀刻(用于可光确定的组合物)或光蚀刻和蚀刻技术在所述钝化层9上形成图案，从而形成钝化层9’，如图16所示，在该钝化层9’上将形成中心导体支架。
参考图17，将光致抗蚀层6沉积在所述基层4和钝化层9’上，并使其曝光、显像形成平行凹槽8，用于随后如上所述的沉积波导较低侧壁部分，以及在导体支架将在其上形成的钝化层9’之上的窗口11。如图18所示，随后如上所述地形成波导的较低侧壁部分10。
接下来在基片表面上沉积绝缘材料。所述绝缘材料可以是上述第一示例性波导微结构支承结构的那些。可将该材料敷层(blanket deposited)沉积在基片的整个表面上，然后如图19所示，通过例如CMP对其进行平面化，将绝缘材料12’填充在裸露的钝化材料9’之上，并限于那些区域。或者也可通过例如旋涂、网板印刷、保护镀敷(resist plating)或蒸汽沉积之类的已知技术，将该绝缘材料选择性地沉积在那些区域。
参考图20，在沉积了籽晶层作为镀基(plating base)之后，在基片上沉积保护层6’，并对保护层曝光和显像，从而形成图案14和16，用于如上所述分别随后沉积波导的中间侧壁部分和中心导体。
如图21所示，接下来通过将合适的材料沉积在保护膜形成的凹槽内，形成波导的中间侧壁部分18和中心导体20。如示，在导体支架12’上形成中心导体20。如图22-26所示，根据前面示例性的实施方式如上所述完成了波导结构。
对于某些用途，宜将最终波导结构从其结合的基片上移去。这使得能够将分离的互联网络在两侧耦合到另一基片，例如单片微波集成电路或其它装置之类的砷化镓模相连接。可通过各种技术将所述结构从基片上移去，例如通过在基片和基层之间使用牺牲层，结构制成之后，可在合适的溶剂中除去牺牲层。适用于所述牺牲层的材料包括例如光致抗蚀剂、高温蜡和各种盐。
图27和28分别是说明叠层排列34中多个第一和第二示例性同轴波导微结构的横截面图。所述叠层的排列可通过以下方式完成：通过每一个叠层顺序构建工艺的连续，或通过将波导在独立的基片上操作，用分离层将波导与各自的基片分离，以及将各结构叠层。理论上，对使用本文中讨论的工艺步骤可以叠层的波导数量并没有限制。然而，在实际中，层的数量将受到以下因素的限制：对厚度和应力的控制、以及每层另外的层所伴随的保护膜去除。由于相邻的波导可共用侧壁，波导的空间利用率可以非常高。尽管举例说明的波导是平行的，也可包括其它的设计，例如任意的平面几何结构，例如那些产生分束装置、组合装置、循环装置、分支网络等的结构。从而使波导互成角度，在它们的平面产生曲率，以减少损失。
图29-31说明一些使不同高度的波导芯利用通路连接在一起的示例性结构。在这些示例性实施方式中，在各种波导的外导体壁区域的表面或一部分上形成花纹，在两个相邻的波导间暴露一开口。可通过同时由侧壁和顶面制成的通路将波导芯相连。在这些实例中，可在三个或三个以上镀膜步骤中制造部件AA中所示的通路，不包括波导芯层。也可使用其它方法将层之间耦合，例如按照参照图32所述制造多步骤或阶段或制造耦合器。
图30说明向末端有向自由空间或波导网络外部其它装置的开口或孔洞的空心波导产生跃迁的短截线(stub)。可对这种短截线进行设计，使其能有效地在例如正方形波导和同轴传输模式之间转化。该结构形成了用于制造天线或辐射体的基础。
图31显示能够在一步或多步步骤中或通过使用灰度保护膜(grey scale resist)加工或机械加工制备的锥形结构。可使用这种锥形结构来匹配空心波导中的阻抗，也可将从自由空间进入的信号或波集中到该短截线。
根据本发明另一示例性的方面，结构可包括由结构的光敏的绝缘聚合物层，例如在其表面上镀金属的保护层形成。在此情况下，所镀金属的厚度可由在操作频率下所选金属的表层深度要求所决定，例如在通常的应用中约为0.2-3微米。为了其它原因，例如从任意的整体有源器件中输送热量，可包括附加的厚度和接线柱(posts)之类的其它金属结构。
本发明波导的横截面通常是正方形的。然而也可考虑其它形状。例如可通过与形成正方形波导相同的方法获得其它矩形波导，只是使波导的长和宽不同。圆形波导，例如圆形或部分圆形的波导可通过灰度图案形成来形成。这些圆形波导可通过例如常规平板印刷制造，用于垂直转换，还可用于更方便地与外部微同轴导体连接，从而制造连接器接口等。
图32说明使两个平行的波导芯40、42近距离互相靠近，从而使它们之间的公共外导体侧壁44逐渐地但是瞬间地在预定的距离消失、然后重新出现。该结构在侧壁上形成间隙46。除去预定距离上的侧壁部分使波导间控制地偶联。在间隙46内，在一个芯和相邻的芯的RF信号之间会发生串扰。该几何结构可制造如RF分束装置和衰减器之类的部件，可用于具有或不具有中心导体的波导。用这种结构可准确地控制偶联所需的量，从而可以更易于达到所需的分束比。非常需要良好确定的分束装置和耦合装置来制造尖端RF和微波网络。出于相同的目的，可在波导之间的壁中选择性地利用一个以上可控的穿孔。可使用例如偏置(offsetting)中心导体、在耦合装置区域改变外部波导尺寸和其它的结构改变，从而使所需的影响达到最佳。在一些应用中，在相同基片上宜包括一种或多种同轴型和空心型波导。图33A-B说明用于将同轴波导48与空心传输型波导50相连的示例性转换结构。这种转换可通过本领域已知的方法完成，例如制造中心导体探测器，其中一个或多个同轴型波导以进入空心型波导结构内部的短截线结束。这些转换可在层间或层内发生。可对壁和短截线之间的距离d进行调节，使这些辐射体的效率达到最大。
根据用于波导结构的具体材料和将与该结构偶联的基片，宜在这两者间提供挠性或柔性(compliant)界面，以弥补热膨胀系数(CTE)的失配。这可取例如挠性的机爪或柱的形式并垂直于基片或接触面上，在这些机爪或柱之间具有窄缝隙，以得到所需的挠性和柔性。其它技术包括例如柔性和导体缓冲器、弹簧和通过柱或挠曲电路相连的环。图34说明弹簧结构52形式的柔性界面，该界面将波导32与基片2相连。
使用这种技术，构建在基片上的第一层可为例如被环状或矩形弹簧环绕的一系列中心导体，所述弹簧的环之间间隔小于1/4波，并与环之间的一个或多个间隔的柱相连。而且环可制成被短柱相连，所述短柱之间的间隔通常小于所需最高频率的波长的1/4、例如小于1/10，使得连接器中的两个柔性有弹簧状垂直连接，从而帮助处理这些层以及硅和砷化镓之类的其它材料之间的热膨胀系数(CTE)失配。
可任选地将波导的壁制成不连续的。这些壁可由例如互相连接的通路、柱、螺旋或具有互相分离的元件制成的弹簧，从而使在所需频率下的损失最小或防止损失。该距离通常小于在所需操作频率下波长的1/4，例如小于该波长的1/10。还可任选地将上述与连续壁结合使用。例如所述顶壁和底壁可为平面的，垂直表面由互相连接的通路组成。可在整个互相连接的基片内任选地使用这些壁结构。不连续壁结构的其它优点包括下列的一个或多个：制造能够更好地处理集成模或基片的CTE失配的柔性结构的能力，更好地从基片上除去保护层、以及获得从基片流入和流出的液体流的能力，更好地调整操作性能，以及在互相连接和连接器中的柔性。
参考图35，可任选地在波导微结构的端面上形成绝缘罩层或薄膜54，以保护波导不受尘土和其它污染物沾污，或在顶面或底面上作为用来杂合地安装装置的绝缘平台。在示例性的结构中，罩层54覆盖了中心导体端表面的外围和外导体端表面的内围，从而达到电和热的连续性，同时还保护波导不受沾污。可通过用例如旋涂沉积材料和在剩余的可光成像的绝缘层上形成图案来形成所述罩层。所述材料可为例如可光形成图案(photopatternable)的聚合物，该聚合物相对不溶于用来从最终结构除去保护膜的介质的聚合物，例如光致抗蚀剂。也可在罩层上提供通气孔(未显示)，以防该处的应力，并帮助溶解除去芯体积中的保护膜。
可希望将多个波导结构连接在一起，或将波导结构与其它结构相连，例如，当匹配晶片或装置(例如微波集成电路装置、微波部件、或其它表面安装部件之类的RF装置)时，当测试波导结构或替换部件时作为临时连接。可用许多联锁几何结构将所述波导与其它波导或其它部件相连。例如，如果有的话，可将用于外导体和内导体的重叠管、管和销、狭槽和按钮用于该目的。图36-38说明了三种示例性的联锁连接结构。图36-37说明了两种狭槽和栓连接结构。图38显示了一种重叠管连接结构，其中波导56在其一端部分具有喇叭形的部分58，使得该喇叭形的部分可在波导60的末端部分上滑动。该连接可以是摩擦安装、焊接和/或用其它粘合剂材料固定。这些结构可在制造波导期间，用标准的光蚀刻技术形成。
如图39所示，可通过已知的方法沉积焊料62的薄层，例如通过电镀或蒸镀便于把无源或有源器件结合到波导上，或将波导结构与不同基片相结合。可在从波导芯体积内除去光致抗蚀剂之前或之后，将所述焊料沉积在任意的垂直或水平暴露面上。
可能还需要将所选的在所用频率下具有低损失的金属，例如金、镍、铜、镍铁、钯、铂或金或这些金属的组合，例如镍和金，涂布在波导外导体和/或中心导体的内壁。这可通过例如在从波导结构上除去了牺牲性保护膜之后的镀层工艺来完成。
在一些应用中，可能需要在基片中形成电引线，或在基片中形成有助于传输和接收传播波的孔或结构，这些结构与图31所示结构类似。可通过例如机械加工或其它已知的形成图案技术中在基片上形成这些特征。例如，考虑可在基片上安装喇叭形天线，例如图25所示，先非均质地蚀刻凹陷，然后喷镀金属，。所述喷镀金属步骤可在随后的构建过程中与其它步骤一同进行。
虽然参照具体的实施方式对本发明进行了详细的描述，但是对本领域技术人员显而易见的是，可以进行各种改变和修改并等效应用，而不背离本发明的范围。

Claims (20)

1.一种同轴波导微结构，包括：
基片；和
设置在所述基片上的同轴波导，所述同轴波导包括：
中心导体；
包括一个或多个壁的外导体，该外导体与中心导体有一定间隔，且设置在中心导体周围；
用来支承中心导体的一个或多个绝缘支承部件，所述支承部件与中心导体接触，封装在外导体之内；以及
中心导体与外导体之间的芯体积，所述芯体积处于真空或气态状态下。
2.如权利要求1所述的同轴波导微结构，其特征在于，所述外导体包括第一侧壁，以及多个绝缘支承部件具有嵌入在第一侧壁中的第一端部分，并在中心导体之下延伸。
3.如权利要求2所述的同轴波导微结构，其特征在于，所述外导体包括与第一侧壁相对的第二侧壁，以及多个第二绝缘支承部件具有嵌入在第二侧壁中的第一端部分，并在中心导体之下延伸。
4.如权利要求3所述的同轴波导微结构，其特征在于，所述绝缘支承部件是支承柱的形式，所述支撑柱具有在外导体内表面上的第一端，和与中心导体相接触的第二端。
5.如权利要求1所述的同轴波导微结构，其特征在于，所述同轴波导具有一般的矩形同轴结构。
6.如权利要求1所述的同轴波导微结构，包括多个所述波导，其中所述波导以叠层结构出现。
7.如权利要求6所述的同轴波导微结构，其特征在于，用一个或多个通路将多个波导连接在一起。
8.如权利要求1所述的同轴波导微结构，包括多个绝缘支承部件，其中所述同轴波导具有一般的矩形同轴结构。
9.如权利要求1所述的同轴波导微结构，其特征在于，所述内导体和外导体由铜或铜合金形成，并包括金和/或镍涂层。
10.如权利要求1所述的同轴波导微结构，还包括基片和波导之间的牺牲分离层。
11.如权利要求1所述的同轴波导微结构，其特征在于，所述波导在波导端部分还包括连接体结构，该连接体结构包括狭槽结构、按钮结构或喇叭形的结构。
12.如权利要求1所述的同轴波导微结构，其特征在于，所述波导在其端面上还包括从中心导体延伸至外导体的绝缘薄膜。
13.如权利要求1所述的同轴波导微结构，还包括处于基片和波导之间的柔性界面装置，用于弥补它们之间的CTE失配。
14.如权利要求1所述的同轴波导微结构，其特征在于：所述同轴波导具有一般的矩形同轴结构，包括多个所述绝缘支承部件；所述中心导体和外导体包含铜或铜合金；还包括与波导相连的有源器件。
15.一种气密封装，包括如权利要求1所述的同轴波导微结构。
16.一种通过顺序构建工艺形成同轴波导微结构的方法，包括：
(a)在基片上沉积多个层，其中，所述层包含金属材料、牺牲性光致抗蚀材料和绝缘材料中的一种或多种，从而在基片上形成一种结构，该结构包括：
中心导体；
包括一个或多个壁的外导体，该外导体与中心导体有一定间隔，设置在中心导体周围；
用来支承中心导体的一个或多个绝缘支承部件，该支承部件与中心导体接触，封装在外导体之内；
以及中心导体与外导体之间的芯体积，其中所述芯体积包括牺牲性光致抗蚀剂；以及
(b)从芯体积中除去牺牲性光致抗蚀剂。
17.如权利要求16所述的方法，还包括(a)通过化学机械平面化对一个或多个层进行平面化。
18.如权利要求16所述的方法，还包括在(b)后，(c)将基片与结构分离。
19.如权利要求16所述的方法，还包括在(b)后，(c)将所述芯体积抽空成真空状态。
20.如权利要求16所述的方法，其特征在于，所述外导体包括第一侧壁，以及多个第二绝缘支承部件具有嵌入在第一侧壁中的的第一端部分，并在中心导体之下延伸。
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