TWI238513B - Coaxial waveguide microstructures and methods of formation thereof - Google Patents
Coaxial waveguide microstructures and methods of formation thereof Download PDFInfo
- Publication number
- TWI238513B TWI238513B TW093105667A TW93105667A TWI238513B TW I238513 B TWI238513 B TW I238513B TW 093105667 A TW093105667 A TW 093105667A TW 93105667 A TW93105667 A TW 93105667A TW I238513 B TWI238513 B TW I238513B
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- Prior art keywords
- conductor
- dielectric
- waveguide
- substrate
- central conductor
- Prior art date
Links
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/06—Coaxial lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/08—Dielectric windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
- H01P11/002—Manufacturing hollow waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
- H01P11/003—Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
- H01P11/005—Manufacturing coaxial lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
- H01P5/103—Hollow-waveguide/coaxial-line transitions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
- H01P5/183—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers at least one of the guides being a coaxial line
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
- H05K1/0219—Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors
- H05K1/0221—Coaxially shielded signal lines comprising a continuous shielding layer partially or wholly surrounding the signal lines
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0272—Adaptations for fluid transport, e.g. channels, holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09809—Coaxial layout
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4685—Manufacturing of cross-over conductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49123—Co-axial cable
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Waveguides (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrically Operated Instructional Devices (AREA)
- Radar Systems Or Details Thereof (AREA)
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1238513 玫、發明說明: 【發明所屬之技術領域】 本發明係大致有關微製造技術及電子裝置。更具體而 言’本發明係有關同軸導波管微結構及形成此種微結構的 方法、以及包含此種微結構的電子裝置。 【先前技術】 諸如在國際專利申請公告第WOOO/39854(W〇,854)號 案已說明了由循序建立的製程所形成的同軸導波管微結 構。請參閱第1A圖,W〇,854揭示了 一種由一循序建立的 製程所形成的同軸導波管微結構(丨〇〇卜該微結構包含一絕 緣基材(102)、在基材(102)上形成且斷開分成兩部分的若干 條金屬接地線(1 〇4)、在該絕緣基材表面上且在該等被分開 的接地線(104)之間形成的若干金屬支架(1〇6)、用來傳輸信 號的該等支架(1〇6)上的一信號線(1〇8)、在該等接地線上形 成的若干接地壁(110)、以及在該等接地壁(11〇)上形成的一 接地線(112)、以及一空氣或空的核心容積。有與此類同軸 導波管結構有多種缺點。例如,使用金屬支架來支承該信 號線時,將造成對傳播波的某種程度的反射,因而產生信 唬干擾。此外,由於諸如需要將該等金屬支架連接到介電 夤基材作為一支承的方式,所以不易於將該製程擴展到具 有複數個同轴層結構的一堆疊式結構。在諸如跳接線或實 現-複雜的配送網路時,需要多層結構。此外,在該習知 結構中對基材材料的選擇並不具有彈性,而是限於可獲致 颂似‘波1*生此的介電質材料。此外,由於該等支架至該基 5 92556 1238513 材的必要機械連接’所以無法使該同軸導波管結構與該基 材分離。 第1B圖示出W〇,854中揭示的另一同軸導波管微結 構。微結構(11 4)包含一半導體基材(116)、第一及第二接地 線(118)、(120)、一介電質支架(122)、以及一信號線(124)。 該半導體具有一溝槽,且係在該基材的面上及該溝槽的表 面上形成該第一接地線。在此種方式下,係在與該半導體 基材表面的高度幾乎相同的高度下形成該信號線,因而可 易於連接到該半導體基材上形成的其他連線。然而,該製 私也具有各種缺點。例^,由於f要有1下的的基材、 導波管結構的幾何形狀、以及需要有在平面基材上的一溝 槽以便獲致必要的平面〖,所以無法將該製程擴展到多同 軸層結構。最|,並不清楚該結構是否能自行支承且因而 此自基材取下該結構,而此種可取下之特性在諸如堆疊式 同軸網路中是相當有用的。 因此, 術所述的一 式方法。 目前需要可克服或顯著改善 種或多種問題的形成同軸導 珂文中參照相關技 波管微結構之改良 L發明内容】 根據本發明的一第_能祥 爐_ ^ ^ ^ 心樣,k仏了同軸導波管微結 冓。忒斂結構包含一基材及配 管。該_導波管^ 之上的同轴導 外圍導# ,轉冰、..〜v體,包含—個或多個壁 、、:’'圍導體係與該中心導體間隔開,且配置 "Ά體附近;一個或多個介電質支承構件,用以支 92556 6 1238513 該中心導體,該介電質支承構件係與該中心導體接觸,且 包封在該外圍導體之内;以及介於該中心導體與該外圍導 體之間的核心容積,其中該核心容積係處於真空狀態或氣 體狀態下。 根據本發明的又一態樣,提供了以循序建立的製程來 形成同軸導波管微結構之方法。該等方法涉及下列步驟: u)在基材之上沈積複數個層,其中該等層包含金屬材料、 犧牲光阻材料、及介電質材料中之一種或多種材料,因而 在该基材之上形成一結構,該結構包含:中心導體;呈有 一個或多個壁之外圍導體,該外圍導體係與該中心導體間 隔開,且被配置在該中心導體附近;一個或多個介電質支 承構件,用以支承該中心導體,該介電質支承構件係與該 中心導體接觸,且被包封在該外圍導體之内;以及介於該 中心導體與該外圍導體之間的核心容積,其中該核心容積 包含犧牲光阻;以及(b)自該核心容積移除該犧牲光阻。 熟習此項技術者在參閱下文的說明、申請專利範圍、 及附加在本說明書的圖式之後,將可易於了解本發明的其 他特徵及優點。 【實施方式】 下文中將要說明的例示製程涉及用來製作其中包含金 屬、介電質、及氣體或真空的微結構之猶序建立的製程。 在該循序建立的製程中,係以—種規定之方式將各材料循 序地堆積成層,而形成—結構。當以微影圖樣產生及諸如 平坦化技術等的其他可供選擇的製程實施時,即提供了一 92556 7 1238513 種形成諸如例示的懸置式同軸導波管微結構之有彈性的方 法。 通常係利用其中包括下列製程中之一種或多種製程的 右干製程完成該循序建立的製程:(“金屬塗佈、犧牲光阻 塗佈' 及介電質塗佈製程;(b)表面平坦化;(c)微影;以及 (d)蝕刻或其他的層移除製程。於沈積金屬時,已發現電鍍 技術疋特別有用的,但是亦可使用諸如物理氣相沈積 (Physical Vap0r Deposition;簡稱 PVD)或化學氣相沈積 (Chemical Vapor Dep〇siti〇n;簡稱 cVD)等的其他金屬沈 積技術。下文中將說明其中包括電鍍技術等的典型循序建 立的製程。 非必須的在將要電鍍金屬的所有位置上圖樣化導電基 礎層或種晶層。例如,可藉由陰影遮蔽罩而選擇性地沈積 4 ^電基礎層或種晶層,或利用光阻層及蝕刻劑來蝕刻該 種曰曰層4以溥鈍態化將諸如一薄永久性介電質施加到該 種晶層,而完成產生圖樣,纟中這些方法都是在種晶層上 進行電料技射所習知的。藉由塗佈及圖樣化,而在該 基礎層或種晶層之上形成_光阻圖樣或模型。然後在露出 «礎層或種晶層的所有區域上電鍍—金屬結構,直到達 到所需的厚度為止。可登 J k擇將所形成的該結構平坦化,使 顯著的厚度變化不會被帶入後續的製程序列。 可在該製程序列的所需時點上沈積—個或多個介電質 s °例如,如果需要在後蜻 、 社便,的電錢步驟中在露出的介電質 材科之上進行金屬電鐘 萄电鍍則可在種晶層形成之前先形成一 92556 8 1238513 介電質層,或者如果要避免在露出的介電質材料之上進行 電鍍’則可在種晶層形成之後才形成一介電質層。可諸如 以旋轉塗佈及圖樣化介電質之方式形成該介電質層。例 當該圖樣化的層對在其上形成的光阻層沒有;利的影 广’例如當圖樣化的介電質厚纟(例如數微米)遠小於在 用=形成的光阻層厚度(例如100微米)時,此種技術是有 美结思形成该等介電質結構的另一技術涉及預先圖樣化該 ^曰或種晶層’其方式為並非在形成光阻圖樣,模型之 1才在3亥基礎層的草4b 1¾ Μ μ游八Μ /、二匚成上形成金屬,而是留下隨後可 二電質材料填滿的一些空的小塊區域。在此種情形中, q係以介電質材料充填到該光_ 該光阻模型之卜.τ 4兄填到 ' 並以光阻及任何材料將該結構平坦化, 在開始次-製程序列之前先產生平坦的層。 阻,構層之後,自該結構移除犧牲光 影劑完成上述H 2貝的其他材料。可利用溶劑或顯 料β /、中該光阻是可溶解的,且其他的材 枓疋不可溶解的或μ ^ ^ 一較不可溶解的。可能需要諸如化學研 磨及(或)保護層電錢等之非必要的完成步驟。 研 現在將來昭證0 置,而該等圖式第13圖而說明本發明的方法及裝 之例示同轴導波管發明的一態樣的各形成階段中 導波管係用來傳播=橫斷面圖及俯視圖。該等同轴 4率自諸如數ΜΗζ至100GHz的射頻 (Ri")此里,例如臺 請參閱第2::、微波、以及直流信號。 ° ’在一基材(2)上形成導波管,而該基材 92556 9 1238513 (2)可以為諸如陶瓷、半導體、金屬、或聚合物。該基材可 採取諸如印刷線路版或半導體基材之形式,例如矽或砷化 鎵晶圓。該基材可具有與用來形成該導波管的材料類似之 膨脹係數,且應將該基材選擇成在該導波管的形成期間能 夠維持其完整性。此外,要在其上形成該導波管的基材〇 表面通常是平坦的。可諸如研光或研磨該基材表面,以便 獲致高度的平坦。於該製程期間,可在形成任何該等層之 别或之後執行所形成結構的表面之平坦化。通常使用諸如 化學機械研磨(Chemical Mechanical Polishing ;簡稱 CMP)、研光、或這些方法的組合等傳統的平坦化技術。亦 可以額外的或替代的方式使用諸如機械切削等的機械光 製、鑽石車削、電漿蝕刻、及雷射燒除等的其他習知平坦 化技術。 在基材(2)之上沈積一基礎層(4),並形成最終導波管結 構中之導波管外圍導體的一底壁。可由金屬或金屬-合金 (統稱為“金屬,,)等具有高導電係數的材料(例如,銅、鎳、 鋁、鉻、金、鈦、上述金屬的合金、摻雜的半導體材料、 或诸如多層的此類材料等的上述材料的組合)構成基礎層 (4)。係以諸如電解電鍍及(或)無電電鍍等的電鍍、諸如濺 錢等的物理氣相沈積(PVD)、或化學氣相沈積(cvD)等的傳 統製程來沈積基礎層(4)。本門技藝中習知的此類技術電鍍 的銅是被認為特別適合用來作為該基礎層的材料。該電錢 可以是諸如使用銅鹽及還原劑的無電製程。適用的材料可 從市場上購得,且包括諸如由Rohm and Haas EleeUQnie ίο 92556 1238513
Materials,L.L.C.(Marlborough,ΜΑ·)供應的 CIRCUPOSIT™無電鍍銅。在替代實施例中,可使用一導 電種晶層,然後執行電解電鍍,而電鍍該材料。適用的電 解質材料可從市場上購得,且包括諸如由R〇hm and心心
Electronic Materials,L.L.C·供應的 COPPER GLEAM™ 酸 液電鍍產品。亦可替代性地使用活化的催化劑,然後進行 電解質沈積。可使該基礎層(及後續各層)的圖樣產生為任 意的幾何形狀,以便利用前文所概述的方法實現一所需的 裝置結構。 遠擇該基礎層(以及後續形成的該導波管外圍導體之 其他壁)的厚度,以便將機械穩定性提供給該導波管,並提 供可使電子在該導波管中移動的足夠導電係數。在極高頻 率時’結構及導熱度的影響變得更為明顯,這是因為趨膚 深度(skin depth)通常將小於1微米。該深度因而將取決於 諸如特定的基礎層材料、所要傳播的特定頻率、以及目標 應用。例如,在要自基材移除最終結構的例子中,採用諸 如自20至150微米或自20至80微米的的較厚之基礎層對 結構的完整性可能是有利的。當最終結構與基材之間要保 持不變時,可能需要採用可由所使用頻率的趨膚深度要求 所決定之一較薄的基礎層。然後可選擇利用前文所述的該 等技術將基礎層(4)平坦化。 請參閱第3圖,在基礎層(4)之上沈積一光阻層(6),且 將該光阻層(6)曝光並顯影,以便形成一圖樣(8),以供後續 沈積該導波管外圍導體的下方側壁部分。圖樣(8)包含在該 92556 11 1238513 光阻層中之兩個平行通道,而露出了基礎層(4)的上表面。 可將傳統的微影步驟及材料用於該用途。該光阻可以是$ 如由 Rohm and Haas Electronic Materials,L.L.C·供應的諸 如 Shipley BPRtm_i〇〇、photoposittm SP、或 photoposit™ SN等的一正或負光阻、或諸如亦由R〇hm and Haas Electronic Materials,L.L.C·供應的諸如 LAMINARtm乾膜等的乾膜。 如第4圖所示,然後形成該導波管外圍導體的下方側 壁部分(1 0)。形成該等側壁的適當材料及技術與前文中述 及的與基礎層有關之材料及技術相同。通常係由用來形成 基礎層(4)的相同材料構成該等侧壁,但是亦可採用不同的 材料。在電鍍製程的例子中,因為只在一先前形成的露出 之金屬區域之上直接施加後續步驟中之金屬時,可省略一 種晶層或電鍍基礎層的施加。然而,該等圖式所示之該等 例示結構顯然通常只構成一特定裝置的一小區域了且在 製程序列之任何層上開始進行這些結構及其他結構的金屬 化,而在此種情形中,通常要使用種晶層。 可在此階段執行表面平坦化,以便移除光阻層上表面 上沈積的任何不需要的金屬’並提供一平坦的表面,以便 於後續的製程。若與單獨使用㈣製料料獲致的層厚 度控制程度相&,則利用表面平坦化時,可對—特定層的 總厚度作更嚴謹的控制。例如,可使用CMp製程將金^及 光阻平坦化至相同的高度。後續可執行研光製帛,以便可 在相同的速率下緩慢地移除金屬、総、及 92556 12 1238513 而可對層的最終厚度作更精密的控制。 如第5圖所示,然後在光阻層(6)及下方側壁部分(1〇) 之上沈積由一介電質材料構成的支承層(丨2)。在一後續製 程中,自支承層(1 2)圖樣化而形成支承結構,以便支承所 要形成的導波管中心導體。由於這些支承結構將位於最終 導波管結構的核心區域’所以形成支承層(12)所用的材料 應使該等支承結構不會對將經由該導波管而傳輸的能量產 生過量的耗損。該材料亦應可提供支承中心導體所需的機 械強度’且亦應在用來自最終導波管結構移除犧牲光阻的 溶劑中較不易溶解。支承層(12)的材料通常是自下列材料 中選出的-介電質材料:諸如矽石及氧化矽、溶膠凝膠、 各種玻璃、氮切(Si3N4)、諸如氧化⑽队)或氮化銘 (AIN)等的鋁氧化物、及氧化鎂(Mg〇)等的無機材料;諸如 聚乙稀、聚醋、聚碳酸酿、醋酸纖維素、聚丙稀、聚氯乙 埽' 聚偏二氯乙烯、聚苯乙稀、聚酿胺、及聚酿亞胺等的 有機材料;諸如有㈣倍半氧咖心响⑽叫材料等的 ,無機混合材料;以及諸如不會被將要進行的犧牲光阻 除製程所侵襲的負作用光阻或光環氧樹脂等的光可界定 ^介電質。使用可易於以諸如旋轉塗佈、滾筒塗佈、刮刀 =、喷灑塗佈、化學氣相沈積、或疊層等的製程來沈積 的材料是有利的。將支承層⑽沈積到可提供對中心導體 2的支承而不會破裂或破損的一厚度。此外,該厚度應 不會嚴重影響到後續光阻層的施加而造成不平坦。 請參閱第6圖,然後使用標準的微影及_技術而在 92556 13 1238513 該支承層中產生圖樣,以便提供複數個導體支承構件 (12’)。可使該等複數個導體支承構件〇2,)與兩個下方側壁 部分(10)相關聯。係在其中一個下方側壁部分⑽之上形成 每一支承構件(12,)的一端,且另一端係延伸到該等側壁部 分(10)之間且在光阻層(6)之上的一位置。每一側壁部分上 的支承結構(12,)通常相互隔離一固定的距離,且在一側壁 部分上的那些支承結構通常係偏置對面側壁部分上的那些 支承結構,使該等支承構件不會直接相對。在一替代實施 例中,可將該等支承構件(12,)形成為自一側壁部分㈨延 伸到另一側壁部分(10)。支承構件〇2,)的數目、形狀、及 配置圖樣應足以提供對中心導體的支承,I㈣可避免過 度的信號耗損。此外,應選擇形狀及週期性或非週期性, 以便在需要有低耗損的傳播時可避免在一些頻率上的反 射k疋因為可利用產生布拉格式光纖光柵(BnW訂atings) =濾光器的技術中所習知的方法計算出該等反射特性,但 需要有此種反射功能時是例外的狀況。 明參閱第7圖,在該基材之上沈積一光阻層(6,),並將 该光阻層(6,)曝光及顯影,以便形成圖樣(14)及(16),以供 後續分別沈積導波管外圍導體及中心導體的中間側壁部 刀。忒中間側壁部分的圖樣(丨4)包含與兩個下方側壁部分 (10)共同延伸的兩個通道。圖樣(14)使下方側壁部分 =及在該等下方側壁部分之上的導體支承構件(12,)之末端 露出。中心導體的圖樣(16)是平行於兩個中間側壁部分且 ”於该等兩個中間側壁部分之間的一通道,而露出導體支 14 92556 1238513 承構件(12,)的相對端及支承部 1刀 J將邊如刖文所述的那 些傳統的微影步驟及材料用於 弟8圖所示,然後將-適當的材料沈積到光阻層(6,) 所形成的該等通道,而形成該外圍導體的中間側壁部分 (1 8)、及中心導體(2〇)。形成中間側壁部分(…及中心導體 (2 0)的適當的材料及技術與前文中述及的與基礎層⑷及下 方側壁部分(10)有關的那些材料及技術相同’但是亦可採 用不同的材料及(或)技術。如前文中述及的可選擇應用於 任何層或每一層的,可在此階段選擇執行表面平坦化,以 便移除光阻層的上表面上沈積的任何不需要的金屬並提 供一平坦的表面以便於後續的製程。 ▲請參閱第9圖,在該基材之上沈積_光阻層(6,,並 將該光阻層(6")曝光及顯影’以便形成圖樣(22),以供後續 沈積外圍導體的上方側壁部分。該上方側壁部分的圖樣⑺) 包含與兩個中間側壁部分(1 8 )共同延伸且露出該等兩個中 間側壁部分(18)的兩個通道。可將諸如前文所述的那些傳 統的微影步驟及材料用於該用途。 如第10圖所示,然後將一適當的材料沈積到光阻層 (:|)所形成的該等通道,而形成該外圍導體的上方側壁部 分(24)。形成該等上方側壁部分的適當的材料及技術與前 文中述及的與基礎層及其他側壁部分有關的那些材料及技 術相同。通常以與形成基礎層及其他側壁部分所用的相同 之材料及技術來形成上方側壁(24)’但是亦可採用不同的 材料及(或)技術。可在此階段選擇執行表面平坦化,以便 92556 15 1238513 =除光阻層的上表面上沈積的任何不需要的金屬,並提供 平坦的表面以便於後續的製程。 士請參閱第11圖,在該基材之上沈積一光阻層(6,,,),並 :乂光阻層(6 )曝光及顯影,以便形成圖樣(%),以供後 續沈積導波管外圍導體的上壁。該上壁的圖樣(26)將露出 一方側J (24)及介於該等上方側壁間之區域。或者,產生 光卩層(6 )的圖樣時,將也在各上方側壁部分(24)之間的 區域中形成光阻層(6’")的一個或多個區域。這些剩餘的部 分可以是諸如光阻柱⑴)的形式。將禁止在其餘光阻層(6,") 的些區域中進行後續對外圍冑體的上壁之沈#。如將於下 :中更詳細說明的,此種方式將在後續沈積的外圍導體上 壁中形成若干開孔,因而有助於自最終結構移除光阻。 如第1 2圖所示,然後將一適當的材料沈積到在該等上 =側壁部分(24)之上且介於該等上方側壁部分之間的 露出區域,而形成該外圍導體的上壁(28)。如所示,係禁 止在光阻柱(3 1)所佔用的容積以及在光阻柱(3 i )上進行沈 積形成4上壁的適當的材料及技術與前文中述及的與基 楚層及側壁部分有關的那些材料及技術相同。通常以與形 成基礎層及其他側壁所用的相同之材料及技術來形成上壁 (2 8)但疋亦可採用不同的材料及(或)技術。可選擇在此階 段選擇執行表面平坦化。 在完成了該導波管的基本結構之後,可加入額外的 層或者然後可移除該結構中剩餘的光阻。可根據所使用 光阻的類型,而以習知的溶劑或去除劑來移除該光阻。為 92556 16 1238513 :自該結構移除光阻’必須使該溶劑與光阻接觸。 路出在该導波管結構的端面。可提供諸如前文中炎 ^ 圖至第12圖述及的導波管中之額外的開孔,以便有:::; :劑與整個結構中的光阻間之接觸。亦可考慮使用有較 阻與溶劑間之接觸的其他結構。例如,於 期間’可在導波管側壁中形成若干開孔。可選擇這^^ 便儘量減小對傳導波的干擾、散射、或线漏。 二Γ選擇成諸如小於所使用的最高頻率的波長之 在移除犧牲光阻之後的最終導波管結構(32)係示於第 U圖。在該導波t的外壁之内Μ前由犧牲光阻所佔用的 空間形成了導波管核心(30)。通常是由空氣佔用該容積。 然而^諸如當該結構形成密封式構裝的—部分時,亦可考 慮在成核^使用具有比空氣更佳的介電f特性之氣體,或 者可在°亥核〜中形成真空。因此,可實現減少水蒸汽吸收 到該導波管的表面。 。月庄思’則文所述的同軸導波管微結構是舉例的,且 可慮使用其他的結構。例如,第! 4圖至第26圖示出採用 不同的u體支承結構之又例示導波管結構。前文中參 照第2圖至第13圖所作的說明大致適用於本實施例,但下 文中將概述不同之處。 如第1 5圖所不,係在基礎層之上沈積一鈍態層 (9) ’而形成導體支承構件。該*態層是一種在其上無法沈 積構成導波官壁及導體的導電材料之材料。該鈍態層的適 92556 1238513 當材料包括誤 襲的負作用後進行的犧牲光阻移除製程所侵 此 光阻或光環氧樹脂等的光可界定之介電質。該 純態層亦可铁, 、 μ 八電# 、曰弋性地是與後續步驟中用來填充空隙的結構 %、 同之較薄的結構介電質。可以諸如旋轉塗佈、滾 同塗佈、或氣相沈積等的習知方法來形成該鈍 、H 6圖所示,然後使用標準微影(用於光可界定的 成)或彳放衫及蝕刻技術在鈍態層(9)上產生圖樣,以便形 成在=上要形成中心導體支承結構的鈍態層(9,)。 一月4閱第17圖,在基礎層(4)及鈍態層(9,)之上沈積一 光P層(6) ’並以前文所述之方式將該光阻層(6)曝光及顯 衫,以便形成若干平行通道(8),以供後續沈積該導波管的 下方側J部分,並在鈍態層(9,)之上將要形成導體支承結構 处二成若干自口(u)。如第18圖所示,然後以前文所述之 方式形成該導波管的下方側壁部分(1 〇)。 然後在該基材表面之上沈積介電質材料。該介電質材 料可以疋則文中參照第一例示導波管微結構的支承結構而 述及的那些介電質材料中之任何介電質材料。如第19圖所 一、了在4基材的整個表面上覆蓋沈積該材料,然後執行 諸如CMP等的一平坦化製程,使介電質材料(12,)填滿露出 的鈍態材料(9,)之上的該等窗口,且使該介電質材料(12,) 只限於這些區域。可替代性地以諸如旋轉塗佈、網版印刷、 光阻鍍層、或氣相沈積等的習知技術在這些區域中選擇性 地沈積該介電質材料。 請參閱第20圖,在沈積種晶層作為電鍍基礎層之後, 92556 1238513 以m文所述之方式在該基材之上沈積光阻層(6,),並將該光 阻層(6 )曝光及顯影,以便形成圖樣(14)及(16),以供後續 分別沈積該導波管及中心導體的中間側壁部分。 如第21圖所示,然後將適當的材料沈積到光阻所形成 的通道,而形成該導波管的中間側壁部分(18)及中心導體 (20)。如圖所示,係在導體支承結構(12,)上形成中心導體 ()士苐22圖至苐26圖所示,係以前文中參照先前實 施例所述之方式完成該導波管結構。 在某些應用中,自最終導波管結構連接的基材移除該 最終導波管結構可能是有利的。此種方式可容許在解脫的 連接網路的兩端上搞合到諸如碎化鎵晶粒等的另一基材, 例:耦合到一單石微波積體電路或其他裝置。可以各種技 術疋成自基材解脫該結構,例如可在基材與基礎層之間使 用:犧牲層,且可在結構完成之後於一適當的溶劑中移除 =牲層。該犧牲層的適當材料包括諸如光阻、高 及各種鹽。 數個圖及第28圖分別示出在堆疊式配置(34)中之複 搞對―㈣二例示同軸導波管微結構之橫斷面圖。可相 二:Γ!疊執行該循序建立的製程,或者對個別的基材 各別::::製程,然後使用解脫層使各導波管結構與其 理論上 ,並堆疊該等結構,而獲致該堆疊式配置。 管之數目2用本說明書所述的製程步驟而堆#出的導波 鱼每、制。然而,實際上,層的數目將受到管理 外的層相_厚度、應力、及光阻移除的^力 92556 19 1238513 之限制。導波管的空間使用率可以是極古 ,“ 疋泣巧的,這是因為相 ㈣導波管可共用共同的側壁。雖然所示出的該等導皮其 是平行的,但是替代性的設計可包括諸如形成分光器/、二 結合器、光循環器、及分支網路等的 丨二十面幾何形狀之 +面成何形狀。因此,該等導波管之間 、, u J呈現適當的角度, 亚在其面中產生彎曲,以便降低耗損。 、•第29圖至第31圖示出可使用通孔而使不同高度上的 V波f核心結合在—起的例示結構。在這些實施例中,圖 樣化多個導波管的外圍導體的一壁區域的一表面或一部 分,以便露出兩個相鄰導波管間之開孔。可使用盘側辟及 上表面同時產生的通孔連接該等導波管核心。在這些:子 大中、可在二個或更多的電鍍步驟中製造斷面AA所示的該 等通孔,其中並不包括導波管核心層。亦可使用輕合各層 的其他方法,例如’製作多個台階或梯級,或者製作參‘ 苐3 2圖所述的偶合器。 第圖不出用來產生轉變至中空導波管之終止柱,该 終止柱終止於一開# ^ ^ 往4 閉孔或隙縫,連接到自由空間或於導波管 網路之外的另—壯 ^ 衣置。可將此種終止柱設計成可在諸如正 方Α中工導波管與同軸傳播模式之間進行有效率的轉換。 該結構形成製作天線或輻射器之基礎。 弟31圖示ψ γ 土 ®可使用一個或多個步驟或使用灰階光阻 裝程或機械切削劊 …表作的一錐形結構。可使用此種錐形結構 來匹配中空導诚总士 &中之阻抗,亦可集中自自由空間至終止 柱的進入的信號或波。 20 92556 1238513 新根據本發明的又一例示態樣,可以若干層結構光敏介 電質聚合物(例如在聚合物表面上金屬化的光阻)構成該等 構。在此種情形中,·^由在工作頻率下選擇的金屬的趨 膚深度要求來決定金屬層之厚度,且該厚度在典型的應用 中係自大約0.2微米至3微米。刊為諸如自任何整合式 主動裝置導熱等的其他理由’而可包括額外的厚度及諸如 金屬柱等的其他金屬結構。 本發明的導波管之橫斷面通常是正方形。然而,亦可 考慮使用其他的形狀。例如’可以與形成正方形導波管相 同的方式得到其他的長方形導波管,但其中不同之處為使 導波管的寬度及高度有所不同。可使用灰階產生圖樣製程 形成諸如環形或部分圓形導波管等的圓形導波管。可透過 傳統微影製程來製作此種圓形導波管作為垂直轉變之用 述’而且可利用此種圓形導波管來更容易地連接到外部同 軸微導體,或用來製作連接器界面等的用途。 第32圖示出兩個平行的導波管核心(40)與(42),這兩 ㈣波管核心(40)與⑷)相互靠近到—短距離,而使該等導 波管核心間之共同外圍導體側壁(44)逐漸地但短暫地消失 :預定的距離’然後重新出;見。該結構在該側壁中產生間 隙(46)。移除該預定距離上的側壁部分得以控制導波管之 間的麵合。在間隙(46)内’在核心與鄰近之核心的射頻信 號之間將發生串訊。該幾何形狀可製作成諸如射頻分離哭 及衷減器等的組件,且可將該幾何形狀應用於具有或不具 有中Ά體之導波管。使用此種結構時,可更精確地控制 92556 21 1238513 所需的耦合量,因而更易於獲致所需的分離比率。製作複 雜的射頻及微波網路時,非常f要有界定清楚的分離器及 偶合器。亦可選擇將料導波管間之壁中之—個以上的受 控制,穿孔用於相同的用途。可將諸如中心導體的偏離、 偶:态區域中之外部導波管尺寸的改變、及其他的結構修 改等的技術用來將所需的效應最佳化。 在某些應用中’在相同的基材上包含一個或多個同軸 型及中空型導波管可能是有利的。第33Ai β圖示出用來 =同軸導波管(48)連接到中空傳輸型導波管⑽的例示轉 變結構。可利用諸如製作中^導體探針等的此項技術中習 —的方式來凡成此種轉變,其中一個或多個該等同軸導波 官係以短柱伸入該等中空型導波管結構中之方式終止。可 在忒等層之間及该等層之内進行這些轉變。可調整該等壁 與等紐柱間之距離,以便將這些輻射器的效率最大化。 、視用於導波管結構及將要耦合到該結構的基材之特定 材料而疋,在该結構與該基材之間提供具有可撓性或順應 性之界面以便補償熱膨脹係數(Coefficient of Thermal Expansion;簡稱CTE)的不匹配可能是有利的。可採取諸 如下列的形式··設置垂直於該基材或界面的具有可撓性之 指狀物或柱,且該等指狀物或柱之間具有狹窄間隙,以便 提供所需的可撓性及順應性。其他的技術包括諸如具有順 應性的導電凸出部、彈簧、以柱連接的環形物、或可撓性 電路。第34圖示出形式為將導波管(32)連接到基材(2)的彈 簧結構(52)之順應性界面。 92556 22 1238513 使用此種技術B夺,在基材上建構的第一層可以是諸如 由圓形或長方形彈簧圍繞的一系、列中心導體,在該等環狀 物之間間隔小於四分之—波長,且在該等環狀物之間連接 有-個或多個有間隔的柱。此外,可以隔離了 一距離(該距 離通常小於所需最高頻率下的四分之—波長,諸如小於 1/10波長)的若干短柱連接各環狀物,而可允許具有連接器 的順應性及有助於處理這些層與諸如矽及砷化鎵等的其他 材料間之熱膨脹係數(CTE)不匹配之彈簧狀垂直連接結 構。 、口 或者,可形成不連續之導波管壁。可諸如由相互連接 的若干通孔、柱、螺線、或彈簧形成該壁,其中該等元件 被間隔開,以便儘量減少或避免在所需頻率下的耗損。通 常該間隔的距離小於所需工作頻率下的波長之1/4,諸如 小於該波長的1/10。又或者,可使用前文所述結構及連續 的壁之組合。例如,上壁及下壁可以是平面的,且垂直表 面係由相互連接的通孔構成。可選擇在整個連接基材中採 用此種壁結構。不連續壁的額外效益包括下列各項中一項 或多項··製作可更佳地處理整合式晶粒或基材的cte不匹 配的順應性結構之能力、移除光阻或得到流體流動進出基 材之較佳能力、較佳調整的工作特性、以及内連線及連接 器的順應性。 請參閱第35圖,可選擇在導波管微結構的末端面上形 成介電質蓋層或薄膜(54),用以使該導波管不會受到灰塵 或其他的污染,或用來作為在上表面或下表面上混合地安 92556 23 1238513 =之介電質平台。在該例示結構中,介電質蓋層(54) 〜導體末端表面的外周圍及外圍導體端表面的内周 =可保持電及熱的連_,同時也使該導波管不會受 到/可朱。可諸如旋轉塗 ^ . 電質展…n 在留下的-可感光之介 ^ ; @形成該介電質蓋層。該材料可以是 ,R ^多除7^阻的媒介物中較不易溶解的 的聚合物’例如光阻。可在該介電質蓋層中提供 =口 (圖中未示出),以避免該介電質蓋層中之應力, 且有助於核d積中之纽的溶解及移除。 試導波管結構或更㈣㈣,^ tr構連接在—起,或需要將該等導波管結構連接到 穿的=構,諸如當匹配晶圓或諸如微波積 波組件、或其他表面安裝組件等的裝置,作為暫 接到其他的導波管或其他的冓造將該等導波管連 重疊管、管及鎖、或外圍導體:内:;’可將或許存在的 -用途。第36圖至第38圖示出内:體,槽及鍵用於此 說^ ^咕 口丁出二種例示連鎖連接結構。 出重Λ /7圖示出兩種溝槽/鍵連接結構。第38圖示 =重豐Γ連接結構,其中導波管⑽在其末端部分上具 心=/^(58)’因而可使導波管_的末端部分滑入該 Γ官部分。可摩擦接合或烊接該連接結構,且(或)可以 =著材:將該連結固定在適當的位置。可使用標準微 影技術而於導波管製造期間形成這些結構。
如第3 9圖所示,可利用咕丄A 用诸如電鍍或蒸鍍等習知的方式 92556 24 1238513 沈積-薄銲料層(62),以便有助於將被動及(或)主動 合到该等導波管’或者將該導波管結構接合到不x 材。可在自該導波管核心容積移除光阻之前或之後^任 何垂直或水平露出的面上沈積該銲料。 也可能需要以諸如金、鎳、鋼、鎳_鐵、鈀、鉑 ==金屬的組合等的針對在所用的頻率下具有低耗損的 金屬來覆盍導波管外圍導體及(或)中心導體之内壁。可 :該導波管結構移除犧牲光阻之後,以諸 成上述的步驟。 X衣柱求凡 =某些應用中,可能需要在基材中形成電通過結構, =在基材中以其他方式形成類似於第31圖所示之孔或姓 二=於傳輸及接收傳播波。可諸如以切削或其他習: 技術在基材中形成這些特徵部位。例如,如第25 圖所示,可考慮以各向異性㈣方式㈣出—凹處, 進仃金屬化步驟’而製作出係為基材的—部分之剩 線可選擇連同該循序建立的製程中之其他步 金屬化步驟。 -他乂驟而執仃該 雖然已參照本發明的特定實施例而詳細說明了本發 是熟習此項技術者當可了解,在不脫離申請專㈣ 圍的範圍下,可作出各種改變及修改,且可採用各種等效 者0 、> 【圖式簡單說明】 珂文中已參照下列的圖式而說明了本發明,而在這些 圖式中,相同的代號表示類似的特徵部位,且這些圖式有^ 92556 25 1238513 圖; 第A及B圖不出習知同軸導波管微結構之橫斷面 第2圖至篦”闽一, 圖不出出根據本發明的各形成階段中之 第一例不同轴導座瞢 姓 斤 皮& U…構之橫斷面圖及俯視圖; 第14圖至第%圖示屮 出出根據本發明的各形成階段中 丁 5軸導波官微結構之橫斷面圖及俯視圖; 晋中H圖Λ第28圖分別示出在根據本發明的堆疊式配 固第一及第二例示同軸導波管微結構之橫斷面 圖, 第29圖至第31圖示出栌攄女欲叫 疊式配置中之若…π 發明而以通孔連接的堆 Μ 導波管微結構之橫斷面圖; 第32圖示出根據本發明之兩個 功率偶合器丨 S刀刎局1口就或 第33Α及Β圖示屮々pi旁士& η …"士 i… 用於在同軸與非同軸導 波官斂結構之間轉變的例示結構; 第3 4圖示出根據本發明以可撓性結構連接到A材之 例示導波管微結構; 得連接到基材之 第35圖示出根據本發明避免同 污染之例示護蓋結構; 皮邊構叉到 第3 ό圖至第3 8圖示出根據本發 構之各種例示結構;^ 月的連接導波管微結 附著圖示出根據本發明的例示同轴導波管微結構及 、著在该微結構的銲料。 [元件符號說明] 92556 26 1238513 2 基材 4 基礎層 6、6, 、6”、6…光阻層 8、14、 16 、 22 、 26 圖樣 9、9, 鈍態層 10 下方側壁部分 11 窗口 12 支承層 12^ 導體支承結構 18 中間側壁部分 20 中心導體 24 上方側壁部分 28 上壁 31 光阻柱 32 最終導波管結構 34 堆疊式配置 40、42導波管核心 44 外圍導體側壁 46 間隙 48 同軸導波管 50 中空傳輸型導波管 52 彈簧結構 54 介電質蓋層 56 > 60 導波管 58 味】ϋ八管部分 62 銲料層 100 同軸導波管微結構 102 絕緣基材 104 金屬接地線 106 金屬支架 108、 124信號線 110 接地壁 112 接地線 114 微結構 116 半導體基材 118 第一信號線 120 第二信號線 122 介電質支架 27 92556
Claims (1)
1238513 拾、申請專利範圍: 1 · 一種同軸導波管微結構,包含·· 一基材;以及 配置在該基材之上的一同軸導波管,該同軸導波管 包含: 一中心導體; 包含一個或多個壁之一外圍導體,該外圍導體係與 邊中心導體間隔開,且配置在該中心導體附近; 一個或多個介電質支承構件,用以支承該中心導 體汶;|電質支承構件係與該中心導體接觸,且被包封 在該外圍導體之内;以及 體之間的一核心容 介於泫中心導體與該外圍導 2. 積’其中該核心容積係處於真空狀態或一氣體狀離下。 如申請專利範圍第丨項之同軸導波管微結構,其中一該外 圍‘體包含第-側壁’且該複數個介電f支承構件且有 嵌入該第-側壁且延伸到該中心導體之下的第一末端 3. 如申請專利範圍第2項之同軸導波管微結構,其中該 外圍導體包含在該第一側壁對面的第二 數個介電質支承構件呈右々λ —— 弟一複 苒件,、有肷入邊第二側壁且延伸到該 中心導體之下的第一末端部分。 4. 如申請專利範圍第3 币j項之冋軸導波管微結構,盆中 等介電質支承構件之形式Α 八甲 心办式為支撐柱,且該等支撐柱且有 在該外圍導體的一内表面卜> & 又命狂/、男 円表面上之第一末端以及與該中心 92556 28 1238513 導體接觸之第二末端。 5. 如申請專利範圍第1項之同軸 包含複數 之方式呈 個導波營,i ¥ /皮官微結構 ,其中該等導波管係以一 現。 隹宜式配3 .°申凊專利範圍第5項之同軸導波 -個或多個通孔將複數個該等導皮二、。構、、中係以 7.如申請專利範圍第i項之同軸導波二=在-起。 個該等介電冑& s铽結構,包含複數 8. 為長方形:::::件’其一㈣波管具有-大致 2:::裝’一請專物…… 9. 1工種Ί盾序建立的製程來形成根據申請專利範圍第 ▲項至第8項中之任一項的同軸導波管微結構之方法, 该方法包含下列步驟: (a)在一基材之上沈積複數個層,其中該等層包含 金屬材料、犧牲光阻材料、及介電質材料中之一種或多 種材料,藉此在該基材之上形成一結構,該結構包含·· 一中心導體; 包含一個或多個壁之一外圍導體,該外圍導體係與 該中心導體間隔開,且配置在該中心導體附近; 一個或多個介電質支承構件,用以支承該中心導 體,該介電質支承構件係與該中心導體接觸,且被包封 在該外圍導體之内;以及 介於該中心導體與該外圍導體之間的一核心容 92556 29 1238513 積,其中該核心容積包含犧牲光阻;以及 (b)自該核心容積移除該犧牲光阻。 10.如申請專利範圍第9項之方法,進一步包含下列步驟: 在步驟(b)之後,使該基材與該結構分離。
30 92556
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US20090058569A1 (en) | 2009-03-05 |
US7012489B2 (en) | 2006-03-14 |
DE602004028349D1 (de) | 2010-09-09 |
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US9312589B2 (en) | 2016-04-12 |
EP1609206A2 (en) | 2005-12-28 |
HK1090471A1 (en) | 2006-12-22 |
CN1784807A (zh) | 2006-06-07 |
EP1609206B1 (en) | 2010-07-28 |
US7148772B2 (en) | 2006-12-12 |
TW200501389A (en) | 2005-01-01 |
CN1784807B (zh) | 2013-03-20 |
US20040263290A1 (en) | 2004-12-30 |
US20140266515A1 (en) | 2014-09-18 |
EP2395598A1 (en) | 2011-12-14 |
EP1609206A4 (en) | 2006-07-05 |
US20190013561A1 (en) | 2019-01-10 |
US20160268665A1 (en) | 2016-09-15 |
US20110210807A1 (en) | 2011-09-01 |
US20060164190A1 (en) | 2006-07-27 |
US20070152782A1 (en) | 2007-07-05 |
WO2004079795A3 (en) | 2005-11-03 |
US7948335B2 (en) | 2011-05-24 |
US8742874B2 (en) | 2014-06-03 |
US10074885B2 (en) | 2018-09-11 |
EP2395598B1 (en) | 2018-08-22 |
ATE475999T1 (de) | 2010-08-15 |
US7405638B2 (en) | 2008-07-29 |
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