CN1591199A - 用于除去与铜相容的抗蚀剂的组合物和方法 - Google Patents
用于除去与铜相容的抗蚀剂的组合物和方法 Download PDFInfo
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- CN1591199A CN1591199A CNA2004100769797A CN200410076979A CN1591199A CN 1591199 A CN1591199 A CN 1591199A CN A2004100769797 A CNA2004100769797 A CN A2004100769797A CN 200410076979 A CN200410076979 A CN 200410076979A CN 1591199 A CN1591199 A CN 1591199A
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- -1 amine compound Chemical class 0.000 claims abstract description 8
- 239000010949 copper Substances 0.000 claims description 120
- 229910052802 copper Inorganic materials 0.000 claims description 119
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- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 97
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 36
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 claims description 29
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 28
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 27
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 27
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 17
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 14
- 239000012964 benzotriazole Substances 0.000 claims description 14
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- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 7
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- DSCJETUEDFKYGN-UHFFFAOYSA-N 2-Methoxybenzenethiol Chemical compound COC1=CC=CC=C1S DSCJETUEDFKYGN-UHFFFAOYSA-N 0.000 claims description 4
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- 239000005711 Benzoic acid Substances 0.000 claims description 4
- UIBGMVGOKJXTGD-UHFFFAOYSA-N C1(=CC=CC=C1)S.C(C)(C)(C)C1=CC=CC=C1 Chemical compound C1(=CC=CC=C1)S.C(C)(C)(C)C1=CC=CC=C1 UIBGMVGOKJXTGD-UHFFFAOYSA-N 0.000 claims description 4
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- 125000000217 alkyl group Chemical group 0.000 claims description 3
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- 239000004210 ether based solvent Substances 0.000 claims description 3
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- 238000006243 chemical reaction Methods 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
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- 150000003335 secondary amines Chemical class 0.000 description 6
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- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 6
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- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 5
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- 229910052782 aluminium Inorganic materials 0.000 description 3
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- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 2
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- AYEKOFBPNLCAJY-UHFFFAOYSA-O thiamine pyrophosphate Chemical compound CC1=C(CCOP(O)(=O)OP(O)(O)=O)SC=[N+]1CC1=CN=C(C)N=C1N AYEKOFBPNLCAJY-UHFFFAOYSA-O 0.000 description 2
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- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
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- 238000004140 cleaning Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
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- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000004375 physisorption Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- NJRXVEJTAYWCQJ-UHFFFAOYSA-N thiomalic acid Chemical compound OC(=O)CC(S)C(O)=O NJRXVEJTAYWCQJ-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/263—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
Description
铜腐蚀 | 光致抗蚀剂去除 | |
在70℃下浸渍20分钟 | 在70℃下浸渍1分钟 | |
单乙醇胺 | 全部腐蚀 | 完全去除10 |
N-甲基乙醇胺 | 全部腐蚀 | 完全去除10 |
N-甲基-2-吡咯烷酮 | 没有腐蚀 | 没有去除0 |
N,N-二甲基乙酰胺 | 没有腐蚀 | 部分残留5 |
二乙二醇乙醚 | 没有腐蚀 | 部分残留5 |
二乙二醇丁醚 | 没有腐蚀 | 部分残留5 |
四乙二醇 | 均匀的点蚀斑 | 部分残留5 |
铜腐蚀 | |
在70℃下浸渍400秒 | |
单乙醇胺 | 0 |
单异丙醇胺 | 3 |
N-甲基乙醇胺 | 10 |
二甲基乙醇胺 | 10 |
二乙基乙醇胺 | 10 |
序号 | 浸渍200秒(第一试件) | 浸渍60秒(第二试件) | 浸渍50秒(第三试件) |
样品1 | 10 | 10 | 7 |
样品2 | 10 | 10 | 8 |
样品3 | 10 | 10 | 8 |
样品4 | 10 | 10 | 7 |
样品5 | 10 | 10 | 8 |
样品6 | 10 | 10 | 8 |
样品7 | 10 | 10 | 10 |
样品8 | 10 | 10 | 10 |
样品9 | 10 | 10 | 10 |
样品10 | 10 | 10 | 10 |
样品11 | 10 | 10 | 7 |
样品12 | 10 | 9 | 6 |
样品13 | 10 | 9 | 5 |
对比样品1 | 10 | 10 | 7 |
对比样品2 | 10 | 10 | 7 |
对比样品3 | 10 | 10 | 6 |
对比样品4 | 10 | 10 | 8 |
对比样品5 | 10 | 10 | 8 |
对比样品6 | 10 | 10 | 7 |
对比样品7 | 10 | 10 | 7 |
对比样品8 | 10 | 10 | 7 |
对比样品9 | 10 | 10 | 1 |
剥离组合物组分 | ||||||||
序号 | 胺化合物溶剂 | 乙二醇醚溶剂 | 极性溶剂 | 第一添加剂 | ||||
种类 | 含量(wt%) | 种类 | 含量(wt%) | 种类 | 含量(wt%) | 种类 | 含量(wt%) | |
样品1 | NMEA | 10 | DEGEE | 80 | NMP | 10 | TT | 0.5 |
样品2 | NMEA | 10 | DEGEE | 60 | NMP | 30 | TT | 0.5 |
样品3 | NMEA | 10 | DEGEE | 40 | NMP | 50 | TT | 0.5 |
样品4 | NMEA | 10 | DEGBE | 80 | NMP | 10 | TT | 0.5 |
样品5 | NMEA | 10 | DEGBE | 60 | NMP | 30 | TT | 0.5 |
样品6 | NMEA | 10 | DEGBE | 40 | NMP | 50 | TT | 0.5 |
样品7 | NMEA | 20 | DEGEE | 50 | NMP | 30 | TT | 0.5 |
样品8 | NMEA | 20 | DEGBE | 50 | NMP | 30 | TT | 0.5 |
样品9 | NMEA | 30 | DEGEE | 40 | NMP | 30 | TT | 0.5 |
样品10 | NMEA | 30 | DEGBE | 40 | NMP | 30 | TT | 0.5 |
样品11 | NMEA | 10 | DEGEE | 60 | NMP | 30 | CBT | 0.5 |
样品12 | NMEA | 10 | TEG | 55 | NMP | 30 | TT | 5 |
样品13 | NMEA | 10 | TEG | 55 | NMP | 30 | 琥珀酸 | 2 |
对比样品1 | MEA | 10 | DEGEE | 60 | NMP | 30 | ||
对比样品2 | NMEA | 10 | DEGEE | 60 | DMAc | 30 | ||
对比样品3 | NMEA | 10 | TEG | 60 | NMP | 30 | ||
对比样品4 | MEA | 10 | DEGEE | 60 | NMP | 30 | TT | 0.5 |
对比样品5 | NMEA | 10 | DEGEE | 60 | NMP | 30 | BT | 0.5 |
对比样品6 | NMEA | 10 | DEGEE | 60 | NMP | 30 | 8-HQ | 0.5 |
对比样品7 | NMEA | 10 | DEGEE | 60 | NMP | 30 | MBT | 0.5 |
对比样品8 | NMEA | 10 | DEGEE | 60 | NMP | 30 | 琥珀酸 | 0.5 |
对比样品9 | NMEA | 10 | DEGEE | 90 | TT | 0.5 |
浸渍400秒(第四试件) | |
样品1 | 10 |
样品2 | 10 |
样品3 | 10 |
样品4 | 10 |
样品5 | 10 |
样品6 | 10 |
样品7 | 10 |
样品8 | 10 |
样品9 | 10 |
样品10 | 10 |
样品11 | 10 |
样品12 | 10 |
样品13 | 8(轻微点状腐蚀) |
对比样品1 | 2 |
对比样品2 | 2 |
对比样品3 | 3(严重点状腐蚀) |
对比样品4 | 7(轻微点状腐蚀) |
对比样品5 | 5 |
对比样品6 | 5(严重点状腐蚀) |
对比样品7 | 7 |
对比样品8 | 3 |
对比样品9 | 10 |
浸渍30秒(第四试件) | |
样品1 | 10 |
样品2 | 10 |
样品3 | 10 |
样品4 | 10 |
样品5 | 10 |
样品6 | 10 |
样品7 | 10 |
样品8 | 10 |
样品9 | 10 |
样品10 | 10 |
样品11 | 10 |
样品12 | 10 |
样品13 | 10 |
对比样品1 | 0 |
对比样品2 | 0 |
对比样品3 | 0 |
对比样品4 | 5(严重点状腐蚀) |
对比样品5 | 5 |
对比样品6 | 2(严重点状腐蚀) |
对比样品7 | 7 |
对比样品8 | 0 |
对比样品9 | 10 |
剥离组合物组分 | ||||||||||
序号 | NMEA | 2* | NMP | 3* | 4* | 5* | ||||
1* | 1* | 1* | 1* | 1* | 1* | |||||
样品14 | 10 | DEGEE | 60 | 30 | MTP | 0.5 | ||||
样品15 | 10 | DEGBE | 60 | 30 | MTP | 0.5 | ||||
样品16 | 10 | DEGEE | 60 | 30 | PTP | 0.5 | ||||
样品17 | 10 | DEGEE | 60 | 30 | MXTP | 0.5 | ||||
样品18 | 10 | DEGEE | 60 | 30 | TBTP | 0.5 | ||||
样品19 | 10 | DEGEE | 60 | 30 | TBMTP | 0.5 | ||||
样品20 | 10 | DEGEE | 60 | 30 | DMTP | 0.5 | ||||
样品21 | 10 | DEGEE | 60 | 30 | MMI | 0.5 | ||||
样品22 | 10 | DEGEE | 60 | 30 | MMI | 0.5 | SA | 0.5 | ||
样品23 | 10 | DEGBE | 60 | 30 | MMI | 0.5 | SA | 0.5 | ||
样品24 | 10 | DEGBE | 60 | EG | 30 | MMI | 0.5 | |||
样品25 | 10 | DEGBE | 60 | 20 | EG | 10 | MMB | 0.5 | ||
对比样品10 | 10 | DEGEE | 85 | MTP | 0.5 | TPP | 5 | |||
对比样品11 | 10 | DEGEE | 90 | MSA | 0.5 | |||||
对比样品12 | 10 | DEGEE | 60 | 30 | TDS | 0.5 | ||||
对比样品13 | 10 | DEGEE | 60 | 30 | TT | 0.5 |
浸渍200秒(第一试件) | 浸渍60秒(第二试件) | 浸渍120秒(第三试件) | |
样品14 | 10 | 10 | 10 |
样品15 | 10 | 10 | 10 |
样品16 | 10 | 10 | 10 |
样品17 | 10 | 10 | 10 |
样品18 | 10 | 10 | 10 |
样品19 | 10 | 10 | 10 |
样品20 | 10 | 10 | 10 |
样品21 | 10 | 10 | 10 |
样品22 | 10 | 10 | 10 |
样品23 | 10 | 10 | 10 |
样品24 | 10 | 10 | 10 |
样品25 | 10 | 10 | 10 |
对比样品10 | 10 | 10 | 10 |
对比样品11 | 10 | 10 | 10 |
对比样品12 | 10 | 10 | 10 |
对比样品13 | 10 | 10 | 10 |
序号 | 浸渍30分钟(第四试件) | |
铜 | 底部金属 | |
样品14 | 10 | 10 |
样品15 | 10 | 10 |
样品16 | 10 | 10 |
样品17 | 10 | 10 |
样品18 | 10 | 10 |
样品19 | 10 | 10 |
样品20 | 10 | 10 |
样品21 | 9 | 10 |
样品22 | 10 | 10 |
样品23 | 10 | 10 |
样品24 | 10 | 10 |
样品25 | 10 | 10 |
对比样品10 | 10 | 10 |
对比样品11 | 7 | 10 |
对比样品12 | 2 | 2 |
对比样品13 | 10 | 2 |
序号 | 浸渍30分钟 | |
铜 | 底部金属 | |
样品14 | 10 | 10 |
样品15 | 10 | 10 |
样品16 | 10 | 10 |
样品17 | 10 | 10 |
样品18 | 10 | 10 |
样品19 | 10 | 10 |
样品20 | 10 | 10 |
样品21 | 9 | 10 |
样品22 | 10 | 10 |
样品23 | 10 | 10 |
样品24 | 10 | 10 |
样品25 | 10 | 10 |
对比样品10 | 10 | 9 |
对比样品11 | 5 | 10 |
对比样品12 | 0 | 2 |
对比样品13 | 10 | 2 |
Claims (28)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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KR2003059628 | 2003-08-27 | ||
KR1020030059628A KR101070689B1 (ko) | 2003-08-27 | 2003-08-27 | 레지스트 제거용 조성물 |
KR1020030064547A KR101041611B1 (ko) | 2003-09-17 | 2003-09-17 | 레지스트 제거용 조성물 |
KR2003064547 | 2003-09-17 |
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CN1591199A true CN1591199A (zh) | 2005-03-09 |
CN100346231C CN100346231C (zh) | 2007-10-31 |
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US (1) | US7384900B2 (zh) |
JP (1) | JP3997221B2 (zh) |
CN (1) | CN100346231C (zh) |
TW (1) | TWI258490B (zh) |
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2004
- 2004-08-25 US US10/924,841 patent/US7384900B2/en active Active
- 2004-08-27 TW TW093125935A patent/TWI258490B/zh not_active IP Right Cessation
- 2004-08-27 CN CNB2004100769797A patent/CN100346231C/zh not_active Expired - Lifetime
- 2004-08-27 JP JP2004249099A patent/JP3997221B2/ja not_active Expired - Lifetime
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US7384900B2 (en) | 2008-06-10 |
US20050048397A1 (en) | 2005-03-03 |
TWI258490B (en) | 2006-07-21 |
JP2005070795A (ja) | 2005-03-17 |
CN100346231C (zh) | 2007-10-31 |
TW200508300A (en) | 2005-03-01 |
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