TWI565836B - Cleaning solution and anti-corrosion agent - Google Patents
Cleaning solution and anti-corrosion agent Download PDFInfo
- Publication number
- TWI565836B TWI565836B TW101149789A TW101149789A TWI565836B TW I565836 B TWI565836 B TW I565836B TW 101149789 A TW101149789 A TW 101149789A TW 101149789 A TW101149789 A TW 101149789A TW I565836 B TWI565836 B TW I565836B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- carbon atoms
- copper
- cleaning solution
- cleaning
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims description 117
- 238000005260 corrosion Methods 0.000 title description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 62
- 239000010949 copper Substances 0.000 claims description 62
- 229910052802 copper Inorganic materials 0.000 claims description 62
- -1 thiol compound Chemical class 0.000 claims description 61
- 239000000243 solution Substances 0.000 claims description 42
- 150000001875 compounds Chemical class 0.000 claims description 40
- 125000004432 carbon atom Chemical group C* 0.000 claims description 32
- 239000003795 chemical substances by application Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 239000003960 organic solvent Substances 0.000 claims description 21
- 125000000217 alkyl group Chemical group 0.000 claims description 18
- 239000002904 solvent Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 8
- 125000003545 alkoxy group Chemical group 0.000 claims description 6
- 125000004414 alkyl thio group Chemical group 0.000 claims description 6
- 125000005843 halogen group Chemical group 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 150000002596 lactones Chemical class 0.000 claims description 3
- 229920005862 polyol Polymers 0.000 claims description 3
- 150000004056 anthraquinones Chemical group 0.000 claims 4
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 claims 3
- IHWDSEPNZDYMNF-UHFFFAOYSA-N 1H-indol-2-amine Chemical class C1=CC=C2NC(N)=CC2=C1 IHWDSEPNZDYMNF-UHFFFAOYSA-N 0.000 claims 2
- 150000008624 imidazolidinones Chemical class 0.000 claims 2
- 150000003077 polyols Chemical class 0.000 claims 2
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 claims 1
- 239000007788 liquid Substances 0.000 description 87
- 238000005406 washing Methods 0.000 description 35
- 230000007797 corrosion Effects 0.000 description 26
- 230000000694 effects Effects 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 18
- 150000007514 bases Chemical class 0.000 description 12
- 230000002378 acidificating effect Effects 0.000 description 9
- 150000007513 acids Chemical class 0.000 description 9
- 239000000654 additive Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 5
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 5
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Substances SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 4
- 239000003599 detergent Substances 0.000 description 4
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 4
- WVDDGKGOMKODPV-UHFFFAOYSA-N hydroxymethyl benzene Natural products OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 4
- 125000003396 thiol group Chemical group [H]S* 0.000 description 4
- WLHCBQAPPJAULW-UHFFFAOYSA-N 4-methylbenzenethiol Chemical compound CC1=CC=C(S)C=C1 WLHCBQAPPJAULW-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000005536 corrosion prevention Methods 0.000 description 3
- 125000004772 dichloromethyl group Chemical group [H]C(Cl)(Cl)* 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 125000004216 fluoromethyl group Chemical group [H]C([H])(F)* 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000002816 methylsulfanyl group Chemical group [H]C([H])([H])S[*] 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 125000001453 quaternary ammonium group Chemical group 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 2
- 125000004066 1-hydroxyethyl group Chemical group [H]OC([H])([*])C([H])([H])[H] 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 2
- PBFNLGUGYAFVCX-UHFFFAOYSA-N 3-tert-butyl-4-methylbenzenethiol Chemical compound CC1=CC=C(S)C=C1C(C)(C)C PBFNLGUGYAFVCX-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- OKIHXNKYYGUVTE-UHFFFAOYSA-N 4-Fluorothiophenol Chemical compound FC1=CC=C(S)C=C1 OKIHXNKYYGUVTE-UHFFFAOYSA-N 0.000 description 2
- FTBCOQFMQSTCQQ-UHFFFAOYSA-N 4-bromobenzenethiol Chemical compound SC1=CC=C(Br)C=C1 FTBCOQFMQSTCQQ-UHFFFAOYSA-N 0.000 description 2
- VZXOZSQDJJNBRC-UHFFFAOYSA-N 4-chlorobenzenethiol Chemical compound SC1=CC=C(Cl)C=C1 VZXOZSQDJJNBRC-UHFFFAOYSA-N 0.000 description 2
- WWQQPHUHTAZWDH-UHFFFAOYSA-N 4-ethylbenzenethiol Chemical compound CCC1=CC=C(S)C=C1 WWQQPHUHTAZWDH-UHFFFAOYSA-N 0.000 description 2
- NIFAOMSJMGEFTQ-UHFFFAOYSA-N 4-methoxybenzenethiol Chemical compound COC1=CC=C(S)C=C1 NIFAOMSJMGEFTQ-UHFFFAOYSA-N 0.000 description 2
- KYMOWQQIZINTJZ-UHFFFAOYSA-N 4-methylsulfanylbenzenethiol Chemical compound CSC1=CC=C(S)C=C1 KYMOWQQIZINTJZ-UHFFFAOYSA-N 0.000 description 2
- APDUDRFJNCIWAG-UHFFFAOYSA-N 4-propan-2-ylbenzenethiol Chemical compound CC(C)C1=CC=C(S)C=C1 APDUDRFJNCIWAG-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 235000019445 benzyl alcohol Nutrition 0.000 description 2
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 125000005997 bromomethyl group Chemical group 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 2
- 125000001028 difluoromethyl group Chemical group [H]C(F)(F)* 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 125000004705 ethylthio group Chemical group C(C)S* 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- JBFHTYHTHYHCDJ-UHFFFAOYSA-N gamma-caprolactone Chemical compound CCC1CCC(=O)O1 JBFHTYHTHYHCDJ-UHFFFAOYSA-N 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000005358 mercaptoalkyl group Chemical group 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 2
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 description 2
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- DHBZRQXIRAEMRO-UHFFFAOYSA-N 1,1,2,2-tetramethylhydrazine Chemical compound CN(C)N(C)C DHBZRQXIRAEMRO-UHFFFAOYSA-N 0.000 description 1
- IFZHGQSUNAKKSN-UHFFFAOYSA-N 1,1-diethylhydrazine Chemical compound CCN(N)CC IFZHGQSUNAKKSN-UHFFFAOYSA-N 0.000 description 1
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- AZLXQBNSOMJQEJ-UHFFFAOYSA-N 1,3-di(propan-2-yl)imidazolidin-2-one Chemical class CC(C)N1CCN(C(C)C)C1=O AZLXQBNSOMJQEJ-UHFFFAOYSA-N 0.000 description 1
- NYCCIHSMVNRABA-UHFFFAOYSA-N 1,3-diethylimidazolidin-2-one Chemical compound CCN1CCN(CC)C1=O NYCCIHSMVNRABA-UHFFFAOYSA-N 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- JMVIVASFFKKFQK-UHFFFAOYSA-N 1-phenylpyrrolidin-2-one Chemical compound O=C1CCCN1C1=CC=CC=C1 JMVIVASFFKKFQK-UHFFFAOYSA-N 0.000 description 1
- XYHKNCXZYYTLRG-UHFFFAOYSA-N 1h-imidazole-2-carbaldehyde Chemical compound O=CC1=NC=CN1 XYHKNCXZYYTLRG-UHFFFAOYSA-N 0.000 description 1
- 125000004778 2,2-difluoroethyl group Chemical group [H]C([H])(*)C([H])(F)F 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- XXXFZKQPYACQLD-UHFFFAOYSA-N 2-(2-hydroxyethoxy)ethyl acetate Chemical compound CC(=O)OCCOCCO XXXFZKQPYACQLD-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- LJDSTRZHPWMDPG-UHFFFAOYSA-N 2-(butylamino)ethanol Chemical compound CCCCNCCO LJDSTRZHPWMDPG-UHFFFAOYSA-N 0.000 description 1
- IWSZDQRGNFLMJS-UHFFFAOYSA-N 2-(dibutylamino)ethanol Chemical compound CCCCN(CCO)CCCC IWSZDQRGNFLMJS-UHFFFAOYSA-N 0.000 description 1
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- KXVSZAQJBQHRHE-UHFFFAOYSA-N 2-[1-(2-hydroxyethyl)-9h-fluoren-2-yl]ethanol Chemical compound C1=CC=C2C3=CC=C(CCO)C(CCO)=C3CC2=C1 KXVSZAQJBQHRHE-UHFFFAOYSA-N 0.000 description 1
- 125000005999 2-bromoethyl group Chemical group 0.000 description 1
- 125000001340 2-chloroethyl group Chemical group [H]C([H])(Cl)C([H])([H])* 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- 125000004777 2-fluoroethyl group Chemical group [H]C([H])(F)C([H])([H])* 0.000 description 1
- HXDLWJWIAHWIKI-UHFFFAOYSA-N 2-hydroxyethyl acetate Chemical compound CC(=O)OCCO HXDLWJWIAHWIKI-UHFFFAOYSA-N 0.000 description 1
- CMWSRWTXVQLHNX-UHFFFAOYSA-N 2-methyl-1-(2-methylpropylsulfanyl)propane Chemical compound CC(C)CSCC(C)C CMWSRWTXVQLHNX-UHFFFAOYSA-N 0.000 description 1
- BLFIUDXNGYVYMP-UHFFFAOYSA-N 3,4,5-trimethoxybenzenethiol Chemical compound COC1=CC(S)=CC(OC)=C1OC BLFIUDXNGYVYMP-UHFFFAOYSA-N 0.000 description 1
- YCDUVMUODNTCRB-UHFFFAOYSA-N 3,4-dibromobenzenethiol Chemical compound SC1=CC=C(Br)C(Br)=C1 YCDUVMUODNTCRB-UHFFFAOYSA-N 0.000 description 1
- HNJZDPKMMZXSKT-UHFFFAOYSA-N 3,4-dichlorobenzenethiol Chemical compound SC1=CC=C(Cl)C(Cl)=C1 HNJZDPKMMZXSKT-UHFFFAOYSA-N 0.000 description 1
- IDKCKPBAFOIONK-UHFFFAOYSA-N 3,4-dimethylbenzenethiol Chemical compound CC1=CC=C(S)C=C1C IDKCKPBAFOIONK-UHFFFAOYSA-N 0.000 description 1
- KCAQWPZIMLLEAF-UHFFFAOYSA-N 3,5-bis(trifluoromethyl)benzenethiol Chemical compound FC(F)(F)C1=CC(S)=CC(C(F)(F)F)=C1 KCAQWPZIMLLEAF-UHFFFAOYSA-N 0.000 description 1
- WRXIPCQPHZMXOO-UHFFFAOYSA-N 3,5-dichlorobenzenethiol Chemical compound SC1=CC(Cl)=CC(Cl)=C1 WRXIPCQPHZMXOO-UHFFFAOYSA-N 0.000 description 1
- LFYVNHDFVIPZHV-UHFFFAOYSA-N 3,5-difluorobenzenethiol Chemical compound FC1=CC(F)=CC(S)=C1 LFYVNHDFVIPZHV-UHFFFAOYSA-N 0.000 description 1
- CESBAYSBPMVAEI-UHFFFAOYSA-N 3,5-dimethylbenzenethiol Chemical compound CC1=CC(C)=CC(S)=C1 CESBAYSBPMVAEI-UHFFFAOYSA-N 0.000 description 1
- CGDKKLOSMYJVOK-UHFFFAOYSA-N 3,5-ditert-butyl-4-methoxybenzenethiol Chemical compound COC1=C(C(C)(C)C)C=C(S)C=C1C(C)(C)C CGDKKLOSMYJVOK-UHFFFAOYSA-N 0.000 description 1
- NEHVUPZZAIICMZ-UHFFFAOYSA-N 3-(1h-indol-2-yl)phenol Chemical compound OC1=CC=CC(C=2NC3=CC=CC=C3C=2)=C1 NEHVUPZZAIICMZ-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- SCURCOWZQJIUGR-UHFFFAOYSA-N 3-(trifluoromethyl)benzenethiol Chemical compound FC(F)(F)C1=CC=CC(S)=C1 SCURCOWZQJIUGR-UHFFFAOYSA-N 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-M 3-Methylbutanoic acid Natural products CC(C)CC([O-])=O GWYFCOCPABKNJV-UHFFFAOYSA-M 0.000 description 1
- HNGQQUDFJDROPY-UHFFFAOYSA-N 3-bromobenzenethiol Chemical compound SC1=CC=CC(Br)=C1 HNGQQUDFJDROPY-UHFFFAOYSA-N 0.000 description 1
- LPVIODAMAHTWHF-UHFFFAOYSA-N 3-butylbenzenethiol Chemical compound CCCCC1=CC=CC(S)=C1 LPVIODAMAHTWHF-UHFFFAOYSA-N 0.000 description 1
- CQJDYPZUDYXHLM-UHFFFAOYSA-N 3-chlorobenzenethiol Chemical compound SC1=CC=CC(Cl)=C1 CQJDYPZUDYXHLM-UHFFFAOYSA-N 0.000 description 1
- WULNDUPZYLKLBH-UHFFFAOYSA-N 3-ethylbenzenethiol Chemical compound CCC1=CC=CC(S)=C1 WULNDUPZYLKLBH-UHFFFAOYSA-N 0.000 description 1
- ZDEUGINAVLMAET-UHFFFAOYSA-N 3-fluorobenzenethiol Chemical compound FC1=CC=CC(S)=C1 ZDEUGINAVLMAET-UHFFFAOYSA-N 0.000 description 1
- QMVAZEHZOPDGHA-UHFFFAOYSA-N 3-methoxybenzenethiol Chemical compound COC1=CC=CC(S)=C1 QMVAZEHZOPDGHA-UHFFFAOYSA-N 0.000 description 1
- WRXOZRLZDJAYDR-UHFFFAOYSA-N 3-methylbenzenethiol Chemical compound CC1=CC=CC(S)=C1 WRXOZRLZDJAYDR-UHFFFAOYSA-N 0.000 description 1
- AELUMDDQRLJQRX-UHFFFAOYSA-N 3-propan-2-ylbenzenethiol Chemical compound CC(C)C1=CC=CC(S)=C1 AELUMDDQRLJQRX-UHFFFAOYSA-N 0.000 description 1
- MIJGIDMKYZLJSU-UHFFFAOYSA-N 3-tert-butyl-5-methylbenzenethiol Chemical compound CC1=CC(S)=CC(C(C)(C)C)=C1 MIJGIDMKYZLJSU-UHFFFAOYSA-N 0.000 description 1
- JIBAYVMQQFJSGC-UHFFFAOYSA-N 3-tert-butylbenzenethiol Chemical compound CC(C)(C)C1=CC=CC(S)=C1 JIBAYVMQQFJSGC-UHFFFAOYSA-N 0.000 description 1
- IUMWLBBTUYLZIF-UHFFFAOYSA-N 4-(1H-indol-2-ylmethyl)phenol Chemical compound C1=CC(O)=CC=C1CC1=CC2=CC=CC=C2N1 IUMWLBBTUYLZIF-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- LVNAPOMMIXZJSU-UHFFFAOYSA-N 4-(9H-fluoren-1-ylmethyl)phenol Chemical compound OC1=CC=C(CC2=CC=CC=3C4=CC=CC=C4CC23)C=C1 LVNAPOMMIXZJSU-UHFFFAOYSA-N 0.000 description 1
- WCMLRSZJUIKVCW-UHFFFAOYSA-N 4-(trifluoromethyl)benzenethiol Chemical compound FC(F)(F)C1=CC=C(S)C=C1 WCMLRSZJUIKVCW-UHFFFAOYSA-N 0.000 description 1
- ARRIPSQGMHQZCZ-UHFFFAOYSA-N 4-[(2-methylpropan-2-yl)oxy]benzenethiol Chemical compound CC(C)(C)OC1=CC=C(S)C=C1 ARRIPSQGMHQZCZ-UHFFFAOYSA-N 0.000 description 1
- LZJWLHDEWPQTPL-UHFFFAOYSA-N 4-bromo-3-methylbenzenethiol Chemical compound CC1=CC(S)=CC=C1Br LZJWLHDEWPQTPL-UHFFFAOYSA-N 0.000 description 1
- PVQZSZNJUBQKJW-UHFFFAOYSA-N 4-butylbenzenethiol Chemical compound CCCCC1=CC=C(S)C=C1 PVQZSZNJUBQKJW-UHFFFAOYSA-N 0.000 description 1
- OXWOIUVGAWIZQQ-UHFFFAOYSA-N 4-ethoxybenzenethiol Chemical compound CCOC1=CC=C(S)C=C1 OXWOIUVGAWIZQQ-UHFFFAOYSA-N 0.000 description 1
- YIZJHQYLSZSTKQ-UHFFFAOYSA-N 4-ethylsulfanylbenzenethiol Chemical compound CCSC1=CC=C(S)C=C1 YIZJHQYLSZSTKQ-UHFFFAOYSA-N 0.000 description 1
- IKZUTVQEBGHQJA-UHFFFAOYSA-N 4-iodobenzenethiol Chemical compound SC1=CC=C(I)C=C1 IKZUTVQEBGHQJA-UHFFFAOYSA-N 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N 4-nonylphenol Chemical compound CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- LHJATWWCJZZRBU-UHFFFAOYSA-N 4-propan-2-yloxybenzenethiol Chemical compound CC(C)OC1=CC=C(S)C=C1 LHJATWWCJZZRBU-UHFFFAOYSA-N 0.000 description 1
- XEQLOBCWMSSZTP-UHFFFAOYSA-N 4-tert-butyl-3-methylbenzenethiol Chemical compound CC1=CC(S)=CC=C1C(C)(C)C XEQLOBCWMSSZTP-UHFFFAOYSA-N 0.000 description 1
- GNXBFFHXJDZGEK-UHFFFAOYSA-N 4-tert-butylbenzenethiol Chemical compound CC(C)(C)C1=CC=C(S)C=C1 GNXBFFHXJDZGEK-UHFFFAOYSA-N 0.000 description 1
- DADBIDGDDHNYJO-UHFFFAOYSA-N 4-tert-butylsulfanylbenzenethiol Chemical compound CC(C)(C)SC1=CC=C(S)C=C1 DADBIDGDDHNYJO-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- CYPZBDKLBORJAQ-UHFFFAOYSA-N C(C)(=O)O.C(C)OCCOC Chemical compound C(C)(=O)O.C(C)OCCOC CYPZBDKLBORJAQ-UHFFFAOYSA-N 0.000 description 1
- QEVGZEDELICMKH-UHFFFAOYSA-N Diglycolic acid Chemical compound OC(=O)COCC(O)=O QEVGZEDELICMKH-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-N beta-methyl-butyric acid Natural products CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 1
- VEZXCJBBBCKRPI-UHFFFAOYSA-N beta-propiolactone Chemical compound O=C1CCO1 VEZXCJBBBCKRPI-UHFFFAOYSA-N 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- JQDCIBMGKCMHQV-UHFFFAOYSA-M diethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CC JQDCIBMGKCMHQV-UHFFFAOYSA-M 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 description 1
- 229940043276 diisopropanolamine Drugs 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- GAEKPEKOJKCEMS-UHFFFAOYSA-N gamma-valerolactone Chemical compound CC1CCC(=O)O1 GAEKPEKOJKCEMS-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- KTDMLSMSWDJKGA-UHFFFAOYSA-M methyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](C)(CCC)CCC KTDMLSMSWDJKGA-UHFFFAOYSA-M 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- YFKNCTBAPAZLON-UHFFFAOYSA-N n,n-dimethyl-1h-indol-2-amine Chemical class C1=CC=C2NC(N(C)C)=CC2=C1 YFKNCTBAPAZLON-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004708 n-butylthio group Chemical group C(CCC)S* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004706 n-propylthio group Chemical group C(CC)S* 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- YCIMNLLNPGFGHC-UHFFFAOYSA-N o-dihydroxy-benzene Natural products OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 229960000380 propiolactone Drugs 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- QVOFCQBZXGLNAA-UHFFFAOYSA-M tributyl(methyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(CCCC)CCCC QVOFCQBZXGLNAA-UHFFFAOYSA-M 0.000 description 1
- HAIXKKLECRWLIX-UHFFFAOYSA-N tridecan-6-ol Chemical compound CCCCCCCC(O)CCCCC HAIXKKLECRWLIX-UHFFFAOYSA-N 0.000 description 1
- JAJRRCSBKZOLPA-UHFFFAOYSA-M triethyl(methyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(CC)CC JAJRRCSBKZOLPA-UHFFFAOYSA-M 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/24—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions
- C23G1/26—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions using inhibitors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/16—Sulfur-containing compounds
- C23F11/161—Mercaptans
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/20—Other heavy metals
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Detergent Compositions (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
Description
本發明係關於洗淨液以及銅或含銅金屬之防腐蝕劑。
半導體裝置係在矽晶圓等基板上層合金屬配線層、低介電層、絕緣層等而形成者,此半導體裝置係藉由以光阻圖型作為遮罩施以蝕刻處理之微影法,加工上述各層而製造。
上述微影法中使用之光阻膜、暫時之層合膜(亦稱為犧牲膜)、以及蝕刻步驟中產生之源自金屬配線層或低介電層之殘留物係使用洗淨液予以去除,以使得不會造成半導體裝置故障,且不妨礙下一步驟。
另外,近年來,隨著半導體裝置之高密度化、高積體化,而採用使用鑲嵌(damascene)法之配線形成方法。該配線形成方法中,採用容易發生腐蝕之銅或含銅金屬等作為構成半導體裝置之金屬配線層之金屬配線材料。
該等半導體裝置之製造方法係依據去除對象之殘留物種類,而使用鹼性、酸性或中性之洗淨液,而有因洗淨液造成之銅或含銅金屬腐蝕之問題。該銅或含銅金屬腐蝕之問題在使用酸性或鹼性洗淨液時更顯著。據此,要求開發出基板洗淨時不會腐蝕該等銅或含銅金屬等之洗淨液。
為了解決因該洗淨液造成之銅或含銅金屬等腐蝕之問題,已提案有例如含有分子內含至少一個巰基,且含有於
鄰接之碳原子上鍵結巰基及羥基之碳數2以上之醇作為防腐蝕劑之洗淨液(參照專利文獻1)。
[專利文獻1]日本特開2000-273663號公報
然而,專利文獻1中所記載之含有防腐蝕劑之洗淨液對於銅等金屬之防腐蝕效果雖某程度被確認,但其防腐蝕效果仍被要求進一步改善。
本發明之目的係提供一種對於銅或含銅金屬具有優異之防腐蝕效果之洗淨液、及防腐蝕劑。
本發明人等為達成上述目的而重複積極研究之結果,發現特定構造之硫醇化合物具有優異之防腐蝕效果,可使用作為防腐蝕劑。另外,本發明人等發現藉由於洗淨液中添加該硫醇化合物作為防腐蝕劑可解決上述課題,因而完成本發明。具體而言,本發明提供如下者。
本發明之第一樣態為一種洗淨液,其含有(A)硫醇化合物及(B)溶劑,其中前述(A)硫醇化合物為由以下述式(1)或下述式
(2)表示之化合物選出之至少一種,
(式(1)中,R為由羥基、碳數1~4之烷基、碳數1~4之烷氧基、碳數1~4之烷硫基、碳數1~4之羥基烷基、碳數1~4之巰基烷基、碳數1~4之鹵化烷基及鹵原子所組成之群組選出之基,m為1~3之整數,n為0~3之整數,m為2或3時,R可相同亦可不同),HS-(CH2)x-OH (2)(式(2)中,x為3以上之整數)。
本發明之第二樣態為銅或含銅金屬之防腐蝕劑,係由以上述式(1)或式(2)表示之化合物所組成。
依據本發明,可提供對銅或含銅金屬具有優異防腐蝕效果之洗淨液及防腐蝕劑。
本發明之洗淨液為含有(A)硫醇化合物及(B)溶劑之洗淨液。(A)硫醇化合物為由後述之以式(1)表示之芳香族硫醇化合物,及以式(2)表示之直鏈巰基醇化合物選出之至少一種化合物。
洗淨劑係用於例如以銅或含銅金屬等形成配線之基板等之被洗淨物的洗淨。藉由該洗淨而自被洗淨物之表面去除附著於被洗淨物表面之光阻膜、暫時層合膜、蝕刻步驟中產生之源自金屬配線層或低介電層之殘留物等。洗淨劑含有自以下述式(1)表示之化合物及以下述式(2)表示之直鏈巰基醇化合物選出之一種以上之化合物作為(A)硫醇化合物時,可抑制由銅或含銅金屬所成配線之腐蝕,且可抑制洗淨時之配線的電阻值變化或斷線之發生。
HS-(CH2)x-OH (2)(式(2)中,x為3以上之整數)。
式(1)中之R為碳數1~4之可具有羥基之烷基時的具體例可列舉為甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基及第三丁基。該等烷基中,為使對溶劑之溶解性良好,以甲基、羥基甲基或乙基較佳,為進一步提高防腐蝕效果,更好為甲基或羥基甲基。
式(1)中之R為碳數1~4之烷氧基時之具體例可列
舉為甲氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、異丁氧基、第二丁氧基及第三丁氧基。該等烷氧基中,為使對溶劑之溶解性良好,以甲氧基或乙氧基較佳,為進一步提高防腐蝕效果,更好為甲氧基。
式(1)中之R為碳數1~4之烷硫基時之具體例可列舉為甲硫基、乙硫基、正丙硫基、異丙硫基、正丁硫基、異丁硫基、第二丁硫基及第三丁硫基。該等烷硫基中,為使對溶劑之溶解性良好,以甲硫基或乙硫基較佳,為進一步提高防腐蝕效果,更好為甲硫基。
式(1)中之R為碳數1~4之羥基烷基時之具體例可列舉為羥基甲基、2-羥基乙基、1-羥基乙基、3-羥基正丙基、4-羥基正丁基等。該等羥基烷基中,為使對溶劑之溶解性良好,以羥基甲基、2-羥基乙基或1-羥基乙基較佳,為進一步提高防腐蝕效果,更好為羥基甲基。
式(1)中之R為碳數1~4之巰烷基時之具體例可列舉為巰甲基、2-巰乙基、1-巰乙基、3-巰正丙基、4-巰正丁基等。該等巰烷基中,為使對溶劑之溶解性良好,以巰甲基、2-巰乙基或1-巰乙基較佳,為進一步提高防腐蝕效果,更好為巰甲基。
式(1)中之R為碳數1~4之鹵化烷基時,鹵化烷基中所含之鹵原子列舉為氟、氯、溴、碘等。R為碳數1~4之鹵化烷基時之具體例可列舉為氯甲基、溴甲基、碘甲基、氟甲基、二氯甲基、二溴甲基、二氟甲基、三氯甲基、三溴甲基、三氟甲基、2-氯乙基、2-溴乙基、2-氟乙
基、1,2-二氯乙基、2,2-二氟乙基、1-氯-2-氟乙基、3-氯-正丙基、3-溴-正丙基、3-氟-正丙基及4-氯-正丁基等。該等鹵化烷基中,以氯甲基、溴甲基、碘甲基、氟甲基、二氯甲基、二溴甲基、二氟甲基、三氯甲基、三溴甲基或三氟甲基較佳,為進一步提高防腐蝕效果,更好為氯甲基、二氯甲基、三氯甲基或三氟甲基。
式(1)中之R為鹵原子時之具體例列舉為氟、氯、溴或碘。
式(1)中,m為1~3之整數,更好為1。m為2或3時,R可相同亦可不同。
以式(1)表示之化合物中,苯環上之R之取代位置並無特別限制。就容易獲得高的防腐蝕效果方面而言,苯環上之R之取代位置相對於-(CH2)n-SH之鍵結位置較好為間位或對位。
至於以式(1)所示之化合物,基於對銅或含銅金屬之防腐蝕性優異,且在洗淨液中之安定性優異,較好為具有至少1個由烷基、羥基烷基及巰烷基所組成群組選出之基作為R之化合物,更好為具有1個由烷基、羥基烷基及巰烷基所組成群組選出之基作為R之化合物。以式(1)表示之化合物具有1個由烷基、羥基烷基及巰烷基所組成群組選出之基作為R時,烷基、羥基烷基或巰烷基於苯環上之取代位置較好相對於-(CH2)n-SH之鍵結位置為間位或對位,更好為對位。
式(1)中,n為0~3之整數。就化合物之調製或取得
容易而言,較好n為0或1,更好為0。
以式(1)表示之化合物之具體例可列舉為對-巰基苯酚、對-硫甲酚、間-硫甲酚、4-(甲硫基)苯硫酚、4-甲氧基苯硫酚、3-甲氧基苯硫酚、4-乙氧基苯硫酚、4-異丙氧基苯硫酚、4-第三丁氧基苯硫酚、3,4-二甲氧基苯硫酚、3,4,5-三甲氧基苯硫酚、4-乙基苯硫酚、4-異丙基苯硫酚、4-正丁基苯硫酚、4-第三丁基苯硫酚、3-乙基苯硫酚、3-異丙基苯硫酚、3-正丁基苯硫酚、3-第三丁基苯硫酚、3,5-二甲基苯硫酚、3,4-二甲基苯硫酚、3-第三丁基-4-甲基苯硫酚、3-第三丁基-4-甲基苯硫酚、3-第三丁基-5-甲基苯硫酚、4-第三丁基-3-甲基苯硫酚、4-巰苯甲醇、3-巰苯甲醇、4-(巰甲基)苯酚、3-(巰甲基)苯酚、4-氟苯硫酚、3-氟苯硫酚、4-氯苯硫酚、3-氯苯硫酚、4-溴苯硫酚、4-碘苯硫酚、3-溴苯硫酚、3,4-二氯苯硫酚、3,5-二氯苯硫酚、3,4-二溴苯硫酚、3,5-二氟苯硫酚、4-巰基兒茶酚、2,6-二第三丁基-4-巰苯酚、3,5-二第三丁基-4-甲氧基苯硫酚、4-溴-3-甲基苯硫酚、4-(三氟甲基)苯硫酚、3-(三氟甲基)苯硫酚、3,5-雙(三氟甲基)苯硫酚、4-甲硫基苯硫酚、4-乙硫基苯硫酚、4-正丁硫基苯硫酚及4-第三丁硫基苯硫酚等。該等化合物中,基於對銅或含銅金屬之防腐蝕效果高、取得容易而言,較好為對-巰苯酚、對-硫甲酚、間-硫甲酚、4-(甲硫基)苯硫酚、4-甲氧基苯硫酚、4-乙基苯硫酚、4-異丙基苯硫酚、4-氟苯硫酚、4-氯苯硫酚及4-溴苯硫酚。又,基於對銅或含銅金屬之防
腐蝕效果高,且在洗淨液中之安定性優異而言,4-巰苯甲醇及4-(巰甲基)苯酚亦較佳。
式(2)中,x為3以上之整數,其上限在不妨礙本發明目的之範圍內並無特別限制。就可良好抑制由洗淨液所致之銅或含銅金屬腐蝕方面而言,x較好為3以上10以下之整數,更好為3以上9以下之整數。使用x為該範圍之化合物作為防腐蝕劑時,防腐蝕劑容易溶解於洗淨液中,故容易獲得良好之防腐蝕效果。且,該情況可抑制以水沖洗洗淨後之被洗淨物時作為防腐蝕劑的以式(2)表示之化合物的析出。
x未達3之整數的化合物雖容易溶解於洗淨液中,但防腐蝕效果差。x超過10之整數的化合物雖顯示良好的防腐蝕效果,但使用含該化合物之洗淨液時,洗淨後以水沖洗會有於被洗淨物之表面析出之情況。因此,使用含有x超過10之整數的化合物之洗淨液時,洗淨後以有機溶劑進行洗滌之後,較好視需要以水進行沖洗。
以式(2)表示之化合物之較佳例列舉如下:HS-(CH2)3-OH;HS-(CH2)4-OH;HS-(CH2)5-OH;HS-(CH2)6-OH;HS-(CH2)7-OH;HS-(CH2)8-OH;HS-(CH2)9-OH;及
HS-(CH2)10-OH。
(A)硫醇化合物在洗淨液中之含量只要不妨礙洗淨液之洗淨效果,且可使(A)硫醇化合物均勻溶解於洗淨液中即無特別限制。洗淨液中,(A)硫醇化合物之含量相對於洗淨液之質量,較好為0.05~5.0質量%,更好為0.1~1.0質量%。以該範圍之量將(A)硫醇化合物添加於洗淨液中時,可獲得良好之金屬防腐蝕效果,同時於以洗淨液洗淨之被洗淨物利用水等沖洗時,容易抑制(A)硫醇化合物之析出。又,洗淨液中,(A)硫醇化合物亦可組合兩種以上使用。
洗淨液包含使(A)硫醇化合物、或後述之(C)鹼性化合物、或酸性化合物或(D)其他添加劑溶解之(B)溶劑。溶劑只要是可使洗淨液中所含成分均勻溶解者即無特別限制,可使用水、有機溶劑及有機溶劑之水溶液之任一種。
有機溶劑可為水溶性有機溶劑,亦可為疏水性有機溶劑,但以水溶性有機溶劑較佳。溶劑中所含之有機溶劑為水溶性時,就容易以水沖洗被洗淨物而去除殘留在被洗淨物表面之洗淨液方面而言係較佳。
水溶性有機溶劑之較佳例可列舉為二甲基亞碸等亞碸類;二甲基碸、二乙基碸、雙(2-羥基乙基)碸、四甲基碸等碸類;N,N-二甲基甲醯胺、N-甲基甲醯胺、N,N-二甲
基乙醯胺、N-甲基乙醯胺、N,N-二乙基乙醯胺等醯胺類;N-甲基-2-吡咯烷酮、N-乙基-2-吡咯烷酮、N-羥基甲基-2-吡咯烷酮、N-羥基乙基-2-吡咯烷酮等內醯胺類;β-丙內酯、γ-丁內酯、γ-戊內酯、δ-戊內酯、γ-己內酯、ε-己內酯等內酯類;1,3-二甲基-2-咪唑啶酮、1,3-二乙基-2-咪唑啶酮、1,3-二異丙基-2-咪唑啶酮等咪唑啶酮類;乙二醇、乙二醇單甲基醚、乙二醇單乙基醚、乙二醇單丁基醚、乙二醇單乙酸酯、乙二醇單甲基醚乙酸酯、乙二醇單乙基醚乙酸酯、二乙二醇、二乙二醇單乙酸酯、二乙二醇單甲基醚、二乙二醇單乙基醚、二乙二醇單丁基醚、丙二醇、丙二醇單甲基醚、丙二醇單乙基醚、丙二醇單丙基醚、二丙二醇單甲基醚、丙三醇、1,2-丁二醇、1,3-丁二醇、2,3-丁二醇等多元醇類,及其衍生物;單乙醇胺、二乙醇胺、三乙醇胺、2-(2-胺基乙氧基)乙醇、N,N-二甲基乙醇胺、N,N-二乙基乙醇胺、N,N-二丁基乙醇胺、N-甲基乙醇胺、N-乙基乙醇胺、N-丁基乙醇胺、N-甲基二乙醇胺、單異丙醇胺、二異丙醇胺、三異丙醇胺等烷醇胺類。
該等水溶性有機溶劑中,以二甲基亞碸、丙二醇單甲基醚、丙二醇單乙基醚、丙二醇單丙基醚、二乙二醇單乙基醚及二乙二醇單丁基醚較佳。
洗淨液中所含溶劑包含水溶性有機溶劑時,基於容易去除附著於被洗淨物上之親水性殘留物與疏水性殘留物二者而言,較好與水一起使用水溶性有機溶劑。
洗淨液中之溶劑含量係依據溶解於洗淨液中之成分的
使用量自由決定。洗淨液中所含之溶劑包含水與水溶性有機溶劑時,洗淨液中之水溶性有機溶劑之含量較好為10~90質量%,更好為20~80質量%。洗淨液不含水時,洗淨液中之水性有機溶劑之含量較好為50~99質量%,更好為75~95質量%。
洗淨液可使用鹼性洗淨液、酸性洗淨液及中性洗淨液之任一種,係依據附著於被洗淨物上之去除對象的殘留物種類適當選擇。該等洗淨液中,就洗淨效果優異而言,以鹼性或酸性洗淨液較佳。洗淨液為鹼性或酸性的洗淨液時,係於洗淨液中調配鹼性化合物或酸性化合物。但,針對鹼性之洗淨液,於溶劑含有鹼性化合物的烷醇胺類時,洗淨液中不一定需要調配鹼性化合物。
洗淨液為鹼性時,於洗淨液中調配之鹼性化合物係自有機或無機的鹼性化合物適當選擇。至於有機鹼性化合物,可使用各種鹼性之含氮有機化合物。鹼性之含氮有機化合物中,以四級銨氫氧化物較佳。四級銨氫氧化物之較佳例可列舉為氫氧化四甲基銨、氫氧化四乙基銨、氫氧化四丙基銨、氫氧化四丁基銨、氫氧化乙基三甲基銨、氫氧化二甲基二乙基銨、氫氧化甲基三乙基銨、氫氧化甲基三丙基銨、氫氧化甲基三丁基銨、氫氧化苄基三甲基銨及氫氧化(2-羥基乙基)三甲基銨等。該等四級銨氫氧化物中,就洗淨液之洗淨效果良好而言,較好為氫氧化四甲基
銨、氫氧化四丙基銨、氫氧化四丁基銨、氫氧化苄基三甲基銨及氫氧化四乙基銨,更好為氫氧化四甲基銨或氫氧化四丁基銨。有機鹼性化合物可組合兩種以上使用。
有機鹼性化合物對洗淨液之調配量雖隨著化合物之鹼性強度而異,但典型上相對於洗淨液之質量較好為1~20質量%,更好為2~15質量%。
無機鹼性化合物在不妨礙本發明目的之範圍內並無特別限制,可使用各種化合物。無機鹼性化合物之較佳例列舉為氫氧化鈉、氫氧化鉀、氫氧化銣等鹼金屬氫氧化物。無機鹼性化合物可組合兩種以上使用。
無機鹼性化合物對洗淨液之調配量雖隨著化合物之鹼性強度而異,但典型上相對於洗淨液之質量較好為0.1質量ppm~1質量%,更好為1質量ppm~0.5質量%。
洗淨液為酸性時,洗淨液中所調配之酸性化合物係在不妨礙本發明目的之範圍內適當選自質子酸。較佳酸性化合物之具體例可列舉為鹽酸、氫氟酸、硫酸、硝酸、甲酸、乙酸、丙酸、丁酸、異丁酸、戊酸、異戊酸、乳酸、草酸、丙二酸、琥珀酸、戊二酸、己二酸、檸檬酸、乙醇酸、二乙醇酸、磷酸、甲烷磺酸、三氟乙酸、三氟甲烷磺酸等質子酸。酸性化合物可組合兩種以上使用。
酸性化合物對洗淨液之調配量雖隨著化合物之酸性強度而異,但典型上相對於洗淨液之質量較好為0.1~20質量%,更好為0.5~15質量%。又更好為1.0~10質量%。
洗淨液在不妨礙本發明目的之範圍內,除(A)硫醇化合物、鹼性或酸性物質以外,亦包含通常可調配於洗淨液中之各種添加劑。可調配於洗淨液中之其他添加劑之較佳例列舉為界面活性劑、抗氧化劑、防腐劑等。
其他添加劑之使用量係依據添加劑之種類適當決定。其他添加劑係以在洗淨劑中一般使用之範圍的量調配於洗淨劑中。
以含(A)硫醇化合物之洗淨液洗淨之被洗淨物並無特別限制。被洗淨物為具備由銅或含銅合金所成之金屬層之基板時,即使以含(A)硫醇化合物之洗淨液洗淨基板時,仍可良好地抑制金屬層之腐蝕。具備由銅或含銅合金所成之金屬層之基板之較佳例,較好為在矽晶圓等基板上層合金屬配線層、低介電層、絕緣層等形成有半導體裝置的基板。
被洗淨物之洗淨方法只要是一般進行之方法即無特別限制。具體而言係使用例如浸漬法、覆液法、淋洗法等藉由使上述洗淨液與被洗淨物接觸1~40分鐘而處理。洗淨通常在室溫下進行,但為提高洗淨效果,亦可將洗淨液升溫至85℃左右而進行。
以下,以實施例更詳細說明本發明,但本發明並不受限於該等實施例。
使用表2所記載之化合物作為防腐蝕劑。以下表1所記載之比率混合洗淨液中所含之各成分,經均勻溶解而調製洗淨液。又,比較例1由於未使用防腐蝕劑,故洗淨液中水的含量成為50.30質量%。
使用所得洗淨液,依循下述方法進行防腐蝕試驗。使用各實施例及比較例之洗淨液進行防腐蝕試驗時之銅膜腐蝕量(nm)示於表2。
使用自以濺鍍法於表面形成膜厚30nm之銅膜之矽基板切出4cm×2cm尺寸之試驗片作為被洗淨物。至於試驗容器係使用容量100ml之玻璃製燒杯。以使試驗片之短邊與燒杯之底面接觸之方式,使試驗片立在燒杯之內壁進行
試驗。將各實施例及比較例之加溫至50℃之洗淨液緩慢地注入已裝入試驗片之燒杯中後,以使洗淨液之溫度保持在50℃之狀態,將試驗片浸漬在洗淨液中10分鐘。浸漬中,以安裝有一段攪拌翼之攪伴裝置,以轉數200rpm攪拌洗淨液。浸漬結束後,自洗淨液拉起試驗片,以水沖洗試驗片表面後,對試驗片表面上吹拂氮氣,使試驗片乾燥。以VR-70(國際電氣股份有限公司製造)測定乾燥後之試驗片之形成銅膜之表面的表面電阻值。由表面電阻值算出銅膜之腐蝕量。
依據實施例1~10及比較例1,可知若為含有以式(1)表示之芳香族硫醇化合物作為防腐蝕劑之洗淨劑,
則可極良好地抑制洗淨步驟中之銅腐蝕。另一方面,依據比較例2~4,可知即使是具有巰基之化合物,使用不含式(1)或式(2)之化合物作為防腐蝕劑之洗淨液,即使抑制了銅膜之腐蝕,仍某種程度使銅膜腐蝕。
除了將對-硫甲酚之含量自0.30質量%變更為0.10質量%,同時將水含量從50.00質量%變更為50.20質量%以外,餘與實施例2同樣調製實施例11之洗淨液。又,除了將對-硫甲酚之含量自0.30質量%變更為0.70質量%,以及將水含量從50.00質量%變更為49.60質量%以外,餘與實施例2同樣調製實施例12之洗淨液。
使用實施例11及12之洗淨液,與實施例2同樣進行防腐蝕試驗後,以實施例11之洗淨液所致之銅膜腐蝕量為0.35nm,以實施例12之洗淨液所致之銅膜腐蝕量為0.15nm。
依據實施例2與實施例11,可知洗淨液中之防腐蝕劑含量降低至0.10質量%左右時,銅膜腐蝕量雖稍增加,但仍可維持優異之防腐蝕效果。又,依據實施例2與實施例12,可知藉由增加洗淨液中之防腐蝕劑含量,可成為洗淨液之防腐蝕效果更優異者。
使用表4所記載之化合物作為防腐蝕劑。以下表3所
記載之比率調製混合洗淨液中所含之各成分,且經均勻溶解之洗淨液。又,比較例5由於未使用防腐蝕劑,故洗淨液中之水含量成為50.30質量%。
依據實施例2及實施例13與比較例5,可知鹼性洗淨液中,不管洗淨液中所含鹼性物質之種類,藉由使用以式(1)表示之芳香族硫醇化合物作為防腐蝕劑,可極良好地抑制洗淨步驟中之銅腐蝕。
使用表6所記載之化合物作為防腐蝕劑。以下表5所記載之比率調製混合洗淨液中所含之各成分,且經均勻溶解之洗淨液。又,比較例6由於未使用防腐蝕劑,故洗淨液中之水含量成為50.30質量%。
依據實施例14與比較例6,可知酸性洗淨液中,藉由使用以式(1)表示之芳香族硫醇化合物作為防腐蝕劑,亦可極良好地抑制洗淨步驟中之銅腐蝕。
使用表8所記載之化合物作為防腐蝕劑。以下表7所記載之比率調製混合洗淨液中所含之各成分,且經均勻溶解之洗淨液。又,為了與實施例15~17比較,而將比較例1及2之結果一併列於表8。
使用所得洗淨液,依據與實施例1相同之方法進行防腐蝕試驗。使用各實施例及比較例之洗淨液進行防腐蝕試驗時之銅膜腐蝕量(nm)示於表8。
依據實施例15~17及比較例1,可知若為含有以式(2)表示之直鏈巰基醇化合物作為防腐蝕劑之洗淨液,可極良好地抑制洗淨步驟中之銅腐蝕。另一方面,依據比較例2及7,可知即使為具有巰基之化合物,使用不含於式(1)或式(2)之化合物作為防腐蝕劑之洗淨液時,即使抑制了銅膜腐蝕,但仍某程度地腐蝕銅膜。
除了將巰己醇(HS-(CH2)6-OH)之含量自0.30質量%變更為0.10質量%,同時將水含量從50.00質量%變更為50.20質量%以外,餘與實施例16同樣調製實施例18之洗淨液。且,除了將巰己醇之含量自0.30質量%變更為0.70質量%,以及將水含量從50.00質量%變更為49.60質量%以外,餘與實施例16同樣調製實施例19之洗淨液。
使用實施例18及19之洗淨液,與實施例1同樣進行防腐蝕試驗,以實施例18之洗淨液所致之銅膜腐蝕量為0.85nm,以實施例19之洗淨液所致之銅膜腐蝕量為0.50nm。
依據實施例16與實施例18,可知洗淨液中之直鏈巰基醇化合物之含量降低至0.10質量%左右時,銅膜腐蝕量雖稍增加,但仍可維持優異之防腐蝕效果。又,依據實施例16與實施例19,可知藉由增加洗淨液中之直鏈巰基醇化合物含量,可成為洗淨液之防腐蝕效果為更優異者。
使用表10所記載之化合物作為防腐蝕劑。以下表9所記載之比率混合洗淨液中所含之各成分,經均勻溶解而調製洗淨液。又,為了比較,而將比較例5之結果與實施例20一起示於表10。
依據實施例16及實施例20、與比較例5,可知鹼性洗淨液中,不管洗淨液中所含鹼性物質之種類,藉由使用以式(2)表示之直鏈巰基醇化合物作為防腐蝕劑,可極良好地抑制洗淨步驟中之銅腐蝕。
使用表12所記載之化合物作為防腐蝕劑。以下表11所記載之比率調製混合洗淨液中所含之各成分,且經均勻溶解之洗淨液。又,為了比較,將比較例6之結果與實施例21一起示於表12。
依據實施例21與比較例6,可知酸性洗淨液中,藉由使用以式(2)表示之直鏈巰基醇化合物作為防腐蝕劑,可極良好地抑制洗淨步驟中之銅腐蝕。
Claims (10)
- 一種洗淨液,其係含有(A)硫醇化合物及(B)溶劑,其中前述(A)硫醇化合物為由以下述式(1)或下述式(2)表示之化合物選出之至少一種,
- 如請求項1之洗淨液,其中前述(A)硫醇化合物為以前述式(1)表示之化合物。
- 如請求項2之洗淨液,其中前述R為羥基。
- 如請求項1之洗淨液,其中前述(A)硫醇化合物為以前述(2)表示之化合物。
- 如請求項4之洗淨液,其中前述x為3以上且10以下之整數。
- 如請求項4之洗淨液,其中前述(B)溶劑為有機溶劑、或有機溶劑之水溶液,前述有機溶劑係由亞碸類、 碸類、醯胺類、內醯胺類、內酯類、咪唑啶酮類、多元醇類及此等之衍生物所組成之群組選出之至少一個。
- 如請求項5之洗淨液,其中前述(B)溶劑係有機溶劑、或有機溶劑之水溶液,前述有機溶劑係由亞碸類、碸類、醯胺類、內醯胺類、內酯類、咪唑啶酮類、多元醇類及此等之衍生物所組成之群組選出之至少一個。
- 如請求項1之洗淨液,其係用於具備由銅或含銅合金所成之金屬層之基板的洗淨。
- 一種銅或含銅合金之防腐蝕劑,其係由以下述式(1)或下述式(2)表示之化合物所成,
- 一種基板之洗淨方法,其係具備由銅或含銅金屬所構成之金屬層之基板之洗淨方法,其特徵為該洗淨方法所使用之洗淨液為如請求項1~8中任一項之洗淨液。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011288931A JP5924761B2 (ja) | 2011-12-28 | 2011-12-28 | 洗浄液、及び防食剤 |
JP2011288930A JP5814112B2 (ja) | 2011-12-28 | 2011-12-28 | 洗浄液、及び防食剤 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201341592A TW201341592A (zh) | 2013-10-16 |
TWI565836B true TWI565836B (zh) | 2017-01-11 |
Family
ID=48695293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101149789A TWI565836B (zh) | 2011-12-28 | 2012-12-25 | Cleaning solution and anti-corrosion agent |
Country Status (2)
Country | Link |
---|---|
US (2) | US20130172224A1 (zh) |
TW (1) | TWI565836B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018058341A1 (en) * | 2016-09-28 | 2018-04-05 | Dow Global Technologies Llc | Sulfoxide/glycol ether based solvents for use in the electronics industry |
KR102444014B1 (ko) | 2019-02-05 | 2022-09-15 | 가부시키가이샤 도쿠야마 | 실리콘 에칭액 및 상기 에칭액을 이용한 실리콘 디바이스의 제조방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020107151A1 (en) * | 1999-08-12 | 2002-08-08 | Ahn Young Soo | Mercaptoalcohol corrosion inhibitors |
TW200801854A (en) * | 2006-05-26 | 2008-01-01 | Air Prod & Chem | Composition and method for photoresist removal |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4114296B2 (ja) | 1999-01-20 | 2008-07-09 | 住友化学株式会社 | 金属の腐食防止剤及び洗浄液 |
GB0306531D0 (en) * | 2003-03-21 | 2003-04-23 | Rhodia Cons Spec Ltd | Formulation for corrosion and scale inhibition |
US7384900B2 (en) * | 2003-08-27 | 2008-06-10 | Lg Display Co., Ltd. | Composition and method for removing copper-compatible resist |
WO2007047365A2 (en) * | 2005-10-13 | 2007-04-26 | Advanced Technology Materials, Inc. | Metals compatible photoresist and/or sacrificial antireflective coating removal composition |
-
2012
- 2012-12-25 TW TW101149789A patent/TWI565836B/zh active
- 2012-12-27 US US13/728,728 patent/US20130172224A1/en not_active Abandoned
-
2013
- 2013-09-09 US US14/021,505 patent/US8802610B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020107151A1 (en) * | 1999-08-12 | 2002-08-08 | Ahn Young Soo | Mercaptoalcohol corrosion inhibitors |
TW200801854A (en) * | 2006-05-26 | 2008-01-01 | Air Prod & Chem | Composition and method for photoresist removal |
Also Published As
Publication number | Publication date |
---|---|
US20140018281A1 (en) | 2014-01-16 |
US20130172224A1 (en) | 2013-07-04 |
US8802610B2 (en) | 2014-08-12 |
TW201341592A (zh) | 2013-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI598439B (zh) | Lithography with cleaning solution and the formation of wiring methods | |
KR101884367B1 (ko) | 높은 wn/w 에칭 선택비를 지닌 스트립핑 조성물 | |
US9536730B2 (en) | Cleaning formulations | |
TWI516880B (zh) | 用於移除厚膜阻隔物的剝除及清潔組合物 | |
TWI454573B (zh) | 清潔配方及該清潔配方的使用方法 | |
CA2452885C (en) | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility | |
KR20170066244A (ko) | 에칭 조성물 및 이를 사용하는 방법 | |
WO2006110645A2 (en) | Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices | |
EP3684887A1 (en) | Etching solution for simultaneously removing silicon and silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device | |
KR101999641B1 (ko) | 구리/아졸 중합체 억제를 갖는 마이크로일렉트로닉 기판 세정 조성물 | |
KR20220024521A (ko) | 반도체 기판용 세정 조성물 | |
JP2014132094A (ja) | 酸性、有機溶媒ベースの多目的マイクロエレクトロニクス洗浄組成物 | |
EP3351658B1 (en) | Etching solution for tungsten and gst films | |
TWI565836B (zh) | Cleaning solution and anti-corrosion agent | |
JP2012018982A (ja) | レジスト剥離剤及びそれを用いた剥離法 | |
JP2022550365A (ja) | ポストエッチング残留物を除去するための組成物、その組成物を使用する方法、及びその組成物の使用 | |
JP5814112B2 (ja) | 洗浄液、及び防食剤 | |
JP5924761B2 (ja) | 洗浄液、及び防食剤 | |
KR20090080227A (ko) | 포토레지스트 잔류물 제거용 박리액 조성물 및 이를 이용한박리 방법 | |
JP2023515005A (ja) | フォトレジスト除去用ストリッパー組成物およびこれを用いたフォトレジストの剥離方法 | |
KR101571753B1 (ko) | 전자재료용 수계 세정액 조성물 및 이를 이용한 세정방법 | |
KR20100011472A (ko) | 구리용 레지스트 제거용 조성물 | |
KR20100041296A (ko) | 구리용 레지스트 제거용 조성물 |