CN1577101A - 使用倒置晶片投射光学接口的浸渍光刻系统及方法 - Google Patents
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Abstract
一种液体浸渍光刻系统,其包含一曝光系统,该曝光系统系以电磁辐射曝光一基底、且还包含一聚集电磁辐射于基底上的投射光学系统。一种液体供应系统提供液体于投射光学系统与基底之间。投射光学系统被置于基底底下。
Description
技术领域
本发明涉及液体浸渍光刻,更明确地,涉及用以局限液体流于一浸渍光刻系统中的方法及系统。
背景技术
使用透镜系统及回照(catadioptric)系统的光学光刻被广泛地使用于供电路图案印刷的半导体制造工业。至今,介于一最终透镜组件与一半导体晶片表面之间的间隙系以气体(通常为空气或氮气)填充。此气体间隙适当地作用,特别在当晶片于曝光期间被扫瞄于光学系统之下且于影像转移期间有介于晶片与透镜系统之间的相对移动时。
光学光刻的实际限制假设其成像发生所经历的媒体为空气。此实际限制系由方程式
其中8为入射光的波长,NA为投射光学系统的数值孔径,而n为媒体的折射指数(其中由于使用离轴(offaxis)照射,4被使用以取代2)。介于最终透镜组件与晶片表面之间的气体接口限制了光学系统的最大分辨率至<1.0的数值孔径。假如介于最终透镜组件与晶片表面之间的气体空间可被填充以一折射材料,诸如油或水,则系统的数值孔径(及因此其分辨能力)可被显著地增加,相应于折射指数n。
因此,藉由引入液体于投射光学系统的一最终透镜组件与一被成像的晶片之间,则折射指数会改变,因而以光源的一较低的有效波长达成增进的分辨率。浸渍光刻有效地降低157nm光源至115nm波长(例如,于n=1.365),其达成关键层的印刷,以其今日工业上惯用的相同的光刻工具。
类似地,浸渍光刻可将193nm光刻向下推至,例如,145nm(对于n=1.33)。435nm、405nm、365nm、248nm、193nm及157nm工具均可被使用以有效地达成较佳分辨率并“延伸”可使用波长。同时,可避免大量的CaF2、硬薄膜、氮气清除,等等。同时,焦点的深度可藉由液体浸渍的使用而被增加,其在(例如)LCD面板制造时可能为有用的。
然而,尽管浸渍光刻极看好,但仍存有数个问题,其至今已排除了浸渍光刻系统的商用化。现存浸渍光刻系统的一个问题涉及局限其被用于投射光学系统与待曝光晶片间的接口中的液体的困难度。于常规系统中,液体被注入于投射光学系统与晶片之间。已提议了相当复杂的系统以维持液体的局限。
存在有另一问题,其中晶片的扫瞄移动使得其晶片被移开自曝光区域,其导致液体的溅出。由于液体的固有的粘稠性,此溅出亦为一问题,即使当晶片存在于投射光学系统之下时。
因此,需要一种用以局限液体于投射光学系统与晶片之间的简单系统及方法。
发明内容
本发明涉及一种使用倒置晶片投射光学接口的浸渍光刻系统及方法,其实质上排除了相关技术之一或更多问题及缺点。
提供一种液体浸渍光刻系统,其包含一曝光系统,该曝光系统系以电磁辐射曝光一基底;且还包含一聚集电磁辐射于基底上的投射光学系统。一种液体供应系统提供液体于投射光学系统与基底之间。投射光学系统被置于基底底下。
于另一方面,提供一种液体浸渍光刻系统,其包含一曝光系统,该曝光系统以电磁辐射曝光一基底;且还包含一聚集电磁辐射于基底上的投射光学系统。一种用以提供液体的机构介于投射光学系统与基底之间。投射光学系统被置于基底底下。一凹凸面被形成于投射光学系统与晶片之间。
于另一方面,提供一种曝光一基底的方法,其包含将一投射光学系统置于基底底下、使用一投射光学系统以投射电磁辐射至基底上、及传送液体于投射光学系统与基底之间。
本发明的额外的特征及优点将被提出于以下说明中。本领域技术人员将根据此处所提出的说明而明白其进一步的特征及优点,或者可藉由本发明的实施而得知。本发明的优点将藉由特别于说明书及其申请专利范围连同后附图形所指出的结构而被实现或达成。
应了解之前的一般性叙述及以下的详细叙述为示范性及说明性,在权利要求书中将提出本发明的进一步解释。
附图说明
后附图形(其被含入以提供本发明的示范实施例的进一步了解且被并入而构成此说明书的一部分)说明本发明的实施例,且配合其叙述以解释本发明的原理。于图形中:
图1显示依据本发明的一实施例的一种液体浸渍光刻系统的横断面视图。
图2显示图1的系统的立体图。
具体实施方式
现在将详细参照本发明的实施例,其范例被说明于后附图形中。
本发明容许一空间于一投射光学系统的最终透镜组件与一晶片表面之间,以利液体填充。其容许光学系统的有效数值孔径的显著增加。使用对于液体及重力的压力控制的组合,液体的量被含入并固持于定位。相较于目前使用的常规系统,投射光学系统(曝光系统)被倒置。换言之,常规系统是曝光朝下或至侧边,而本发明的投射光学系统是曝光朝上。晶片被曝光以其抗蚀剂涂敷的表面朝下,而抗蚀剂接触于一液体凹凸面。于晶片扫瞄期间,凹凸面横越晶片的抗蚀剂涂敷表面。
本发明容许间隙填充液体被保持于定位,即使于晶片的边缘通过光学系统时。投射光学系统(与液体)的外壳可被扫瞄出晶片的边缘且再扫瞄至晶片上,而维持液体接口。于外壳周围的接取盆接取并容纳任何置换的液体。液体凹凸面由液体压力所控制。此接口因而轻易地兼容与许多型式的液体。
图1说明依据本发明的一种液体浸渍光刻系统的一实施例。如图1中所示,一投射光学系统100被置于一晶片101底下。晶片101包含抗蚀剂涂敷的晶片表面106。投射光学系统100包含多个透镜组件102A、102B。外壳103的顶部包含一开口110以供投射一影像至晶片101上。外壳103的顶部被显示为图1中的水平线,虽然其不一定为如此。
介于外壳103的顶部与透镜102A之间的区(于图1中标示为107)被压力控制,且藉由一液体封盖104而被密封自剩余的投射光学系统100。区107被填充以一种液体,通常处于来自一液体源(未显示于图1中)的压力下以平衡重力。于曝光期间,液体形成一凹凸面108,如图1中所示。接取盆105被用以移除任何偏离的液体,其可能在沿着一扫瞄轴扫瞄晶片101时发生。应理解可使用较多或较少的接取盆(相较于图1中所示者)。接取盆105也可以是围绕外壳103的环状的。
注意于本发明中,容许重力来执行局限液体的工作。凹凸面108基本上由重力所控制,于晶片101被扫瞄时。再者,当晶片101移动超过投射光学系统100时,液体将会轻易地溅出晶片101的边缘,不同于常规的浸渍光刻系统。
一液体封闭环系统(即,接取盆105)被安装至光刻系统透镜之末端。如上所述,投射光学系统100曝光影像朝上至晶片101(亦即,晶片表面106)的底侧上。晶片101被涂敷抗蚀剂,且待被成像的晶片表面106为较低表面。外壳103的顶部提供一介于最终透镜组件102A与晶片101的晶片表面106间的液体接口,其投射光学系统100聚焦于该液体接口上。外壳103的顶部中的开口110容许来自投射光学系统100的光束被成像于晶片表面106上。其亦容许液体与晶片表面106之间的紧密接触。重要的是确保其封闭区107保持充满液体,尽管外壳103的顶部被开通至晶片表面106,且尽管晶片101可能以不受限制的方式移动于投射光学系统100之上。液体通过其加诸于液体上的压力的控制而被固持于定位,透过一循环系统(亦即,一种液体供应系统,未显示于图形中)。压力被控制以平衡重力并保持其横越开口110的凹凸面(meniscus)108,当晶片101不存在时。当晶片101被滑动于投射光学系统100之上时,压力被增加以容许液体“推开”孔隙并接触晶片表面106。当液体接口由于晶片101相对于投射光学系统100的移动而滑动于晶片101的边缘上方时,液体上的压力被调整以将液体从晶片表面106“拉回”进入区107。
接近开口110的外壳103的顶部(如图1中所示)可被特殊地形成及表面加工以控制接口液体的形状及性质。例如,外壳103的顶部的表面可被制为疏水的(hydrophobic)。围绕外壳103的顶部的接取盆105抑制其溢流或泄漏自外壳103的顶部的液体。此液体可被过滤、温控及再循环回入区107。
晶片表面106及外壳103的顶部的调适可进一步增进性能。于液体为水的情况下,表面可被制为疏水的。介于晶片表面106与外壳103顶部之间的间隙(距离)系藉由晶片曝光的动力学而被最佳化。虽然本系统被设计以利晶片动态曝光于一扫瞄系统中,但其也可被使用于步进-及-扫瞄型曝光系统。
于典型的干式曝光系统中,介于透镜102A与晶片101之间的间隙为3-4毫米的等级。于本发明中,介于外壳103与晶片101之间的间隙可被制成低如50微米,虽然较大或较小的尺寸(例如,高达0.5毫米的介于外壳103与晶片101间的间隙)也可被使用(额定地,100微米被预期是于典型的范围内,虽然50-150微米、40-200微米、或甚至高达1毫米、以及甚至于某些情况下大于1毫米也为可能的)。应注意水为193nm光刻的较佳液体,其于193纳米为相对无损的。对于157纳米光刻,液体内的损失为一关心条件,其倾向于需要介于透镜102A与晶片101之间的较小间隙。换言之,透镜102A将移动更接近于晶片101(降至约1毫米附近)。于157纳米光刻的情况下,介于外壳103与晶片101之间的间隙可降至50微米或更小。
亦应理解,于本发明中,于晶片101的曝光需要一种干式曝光的情况下,液体可被完全地移除。对于干式曝光,光学系统需被适当地调整(例如,焦点、球面像差、数值孔径的减小,等等)。
如上所述,对于193纳米成像,液体最好是水(例如,去离子化水),虽然可使用其它的液体,例如,环-辛烷、Krytox(Foemblin油)及全氟聚醚流体。
图2说明图1的液体浸渍光刻系统的立体图。于图2中,与图1相同的组件被同样地标示。(注意于此仿真图形中,晶片101呈现为透明的。)
将投射光学系统100置于晶片101底下(而非于其上)容许利用重力以形成一凹凸面108以致其液体的局限被实质上简化了。如此去除了复杂局限系统、相当繁复的液体循环及泵浦机构等等的需求。其亦可观地简化了任何偏离液体(其可使用接取盆105而被简单地捕取)的效应。
另一方面,也可以具有“喷泉头(fountainhead)”效应,其中液体被排除自外壳103而朝向晶片101,其达成类似于凹凸面的效果,并接着流入接取盆以利再循环。
本发明获致对于液体浸渍光刻系统的数项优点。液体的局限被简化。溅出被减少或完全消除。此系统可被使用为一湿式曝光系统(具有液体)、以及一干式曝光系统(无液体,具有光学系统调整),如所需。所有这些优点容许现存光刻工具及类似波长的使用以界定更小的特征于一半导体表面上。
结论
虽然本发明的各个实施例被描述于上,应了解其系以范例方式呈现,而非限制。本领域技术人员将明白其形式上及细节上的各种改变均可被执行于此而不背离本发明的精神及范围。
藉助于其说明特定功能的性能的功能性建构方块及方法步骤和其关系而描述了本发明。这些功能性建构方块及方法步骤的边界已被任意地界定于此以便于描述。替代的边界也可被界定,只要其特定的功能及关系被适当地执行。同时,方法步骤的顺序可被重新安排。任何此等替代边界因而落入本发明的范围及精神内。本领域技术人员将了解这些功能性建构方块可被实施以分离的组件、特别应用的集成电路、执行适当软件等的处理器或任何其组合。因此,本发明的广泛性及范围不应由任何上述示范性实施例所限制,而应仅被界定相应于后附申请专利范围及其同等物。
Claims (42)
1.一种液体浸渍光刻系统,其包含:
一曝光系统,其以电磁辐射曝光一基底并包含一将电磁辐射聚集于基底上的投射光学系统;及
一液体供应系统,其提供液体于投射光学系统与基底之间,
其中投射光学系统被置于基底底下。
2.根据权利要求1的液体浸渍光刻系统,其中液体供应系统得以形成一液体凹凸面于投射光学系统之上。
3.根据权利要求1的液体浸渍光刻系统,其中液体供应系统得以形成一喷泉头于投射光学系统之上。
4.根据权利要求1的液体浸渍光刻系统,其中投射光学系统包含一外壳,具有被设置为捕取偏离液体的至少一个接取盆。
5.根据权利要求1的液体浸渍光刻系统,其中投射光学系统包含:
一外壳,其中安装有多个透镜,该外壳包含一介于多个透镜的一最高透镜与外壳的顶部之间的压力区;
一开口,其位于外壳的顶部中;及
一液体封盖,其介于多个透镜的最高透镜与压力区之间。
6.根据权利要求5的液体浸渍光刻系统,其中介于基底与外壳顶部之间的距离约为50-150微米。
7.根据权利要求5的液体浸渍光刻系统,其中介于基底与外壳顶部之间的距离介于50微米与500微米之间。
8.根据权利要求5的液体浸渍光刻系统,其中外壳的顶部具有一疏水表面。
9.根据权利要求1的液体浸渍光刻系统,其中液体供应系统仅于需要湿式曝光时选择性地提供液体。
10.根据权利要求1的液体浸渍光刻系统,其中电磁辐射为193纳米。
11.根据权利要求1的液体浸渍光刻系统,其中电磁辐射为157纳米。
12.根据权利要求1的液体浸渍光刻系统,其中电磁辐射为435纳米。
13.根据权利要求1的液体浸渍光刻系统,其中电磁辐射为405纳米。
14.根据权利要求1的液体浸渍光刻系统,其中电磁辐射为365纳米。
15.根据权利要求1的液体浸渍光刻系统,其中电磁辐射为248纳米。
16.一种液体浸渍光刻系统,其包含:
一曝光系统,其曝光一基底并包含一投射光学系统;及
一液体提供机构,用以提供液体于投射光学系统与基底之间,
其中投射光学系统被置于基底底下。
17.根据权利要求16的液体浸渍光刻系统,其中液体提供机构得以形成一液体凹凸面于投射光学系统之上。
18.根据权利要求16的液体浸渍光刻系统,其中液体提供机构得以形成一喷泉头于投射光学系统之上。
19.根据权利要求16的液体浸渍光刻系统,其中投射光学系统包含一外壳,具有被设置为捕取偏离液体的至少一个接取盆。
20.根据权利要求16的液体浸渍光刻系统,其中投射光学系统包含:
一外壳,其中安装有多个透镜,该外壳包含一介于多个透镜的一最高透镜与外壳的顶部之间的压力区;
一开口,其位于外壳的顶部中;及
一液体封盖,其介于多个透镜的最高透镜与压力区之间。
21.根据权利要求20的液体浸渍光刻系统,其中介于基底与外壳顶部之间的距离约为50-150微米。
22.根据权利要求20的液体浸渍光刻系统,其中介于基底与外壳顶部之间的距离介于50微米与500微米之间。
23.根据权利要求20的液体浸渍光刻系统,其中外壳的顶部具有一疏水表面。
24.根据权利要求16的液体浸渍光刻系统,其中液体提供机构仅于需要湿式曝光时选择性地提供液体。
25.根据权利要求16的液体浸渍光刻系统,其中电磁辐射为193纳米。
26.根据权利要求16的液体浸渍光刻系统,其中电磁辐射为157纳米。
27.根据权利要求16的液体浸渍光刻系统,其中电磁辐射为435纳米。
28.根据权利要求16的液体浸渍光刻系统,其中电磁辐射为405纳米。
29.根据权利要求16的液体浸渍光刻系统,其中电磁辐射为365纳米。
30.根据权利要求16的液体浸渍光刻系统,其中电磁辐射为248纳米。
31.一种液体浸渍光刻系统,其包含:
一曝光系统,其包含一投射光学系统;及
一液体供应系统,其得以提供液体于投射光学系统与基底之间,
其中投射光学系统得以置于基底底下。
32.一种液体浸渍光刻系统,其包含:
一曝光系统,其包含一投射光学系统;及
一液体供应系统,其得以提供液体于投射光学系统与基底之间,
其中液体供应系统得以形成一液体凹凸面于投射光学系统之上。
33.根据权利要求32的液体浸渍光刻系统,其中投射光学系统得以定位于基底底下。
34.根据权利要求32的液体浸渍光刻系统,其中投射光学系统包含一外壳,具有得以捕取偏离液体的至少一个接取盆。
35.根据权利要求32的液体浸渍光刻系统,其中投射光学系统包含:
一外壳,其中安装有多个透镜,该外壳包含一介于多个透镜的一最高透镜与外壳的顶部之间的压力区;
一开口,其位于外壳的顶部中;及
一液体封盖,其介于多个透镜的最高透镜与压力区之间。
36.根据权利要求35的液体浸渍光刻系统,其中外壳的顶部具有一疏水表面。
37.根据权利要求35的液体浸渍光刻系统,其中液体供应系统仅于需要湿式曝光时选择性地提供液体。
38.一种朝上定向的投射光学系统,其包含:
一外壳,其包含一疏水上部分并具有一形成于疏水上部分中的开口;
一接取盆,其围绕外壳的周边;
多个透镜,其得以朝上曝光一基底;及
一液体封盖,其围绕投射光学系统之一最终透镜元件。
39.一种曝光一基底的方法,其包含:
将一投射光学系统置于基底底下;
使用一投射光学系统以投射电磁辐射至基底上;及
传送液体于投射光学系统与基底之间。
40.根据权利要求39的方法,进一步包含使用至少一个接取盆以从基底移除过量液体。
41.根据权利要求39的方法,进一步包含形成一液体凹凸面于投射光学系统与基底之间。
42.根据权利要求39的方法,进一步包含提供压力至液体以维持凹凸面。
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Families Citing this family (182)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10123027B4 (de) * | 2001-05-11 | 2005-07-21 | Evotec Oai Ag | Vorrichtung zur Untersuchung chemischer und/oder biologischer Proben |
US7367345B1 (en) * | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
JP3977324B2 (ja) | 2002-11-12 | 2007-09-19 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN100568101C (zh) | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7242455B2 (en) * | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
CN1723541B (zh) * | 2002-12-10 | 2010-06-02 | 株式会社尼康 | 曝光装置和器件制造方法 |
AU2003289239A1 (en) * | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure system and device producing method |
JP4352874B2 (ja) * | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
EP1571698A4 (en) * | 2002-12-10 | 2006-06-21 | Nikon Corp | EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD |
KR101037057B1 (ko) * | 2002-12-10 | 2011-05-26 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US7948604B2 (en) * | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
JP4434762B2 (ja) * | 2003-01-31 | 2010-03-17 | 東京応化工業株式会社 | レジスト組成物 |
WO2004086468A1 (ja) | 2003-02-26 | 2004-10-07 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
WO2004086470A1 (ja) * | 2003-03-25 | 2004-10-07 | Nikon Corporation | 露光装置及びデバイス製造方法 |
DE602004020200D1 (de) | 2003-04-07 | 2009-05-07 | Nippon Kogaku Kk | Belichtungsgerät und verfahren zur herstellung einer vorrichtung |
KR101177331B1 (ko) * | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
JP4656057B2 (ja) * | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
KR101469405B1 (ko) * | 2003-04-10 | 2014-12-10 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
KR20140139139A (ko) | 2003-04-10 | 2014-12-04 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
WO2004093160A2 (en) * | 2003-04-10 | 2004-10-28 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
ATE449982T1 (de) | 2003-04-11 | 2009-12-15 | Nikon Corp | Reinigungsverfahren für optik in immersionslithographie |
SG2012031217A (en) | 2003-04-11 | 2015-09-29 | Nippon Kogaku Kk | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
JP4582089B2 (ja) * | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
SG194246A1 (en) | 2003-04-17 | 2013-11-29 | Nikon Corp | Optical arrangement of autofocus elements for use with immersion lithography |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
WO2004102646A1 (ja) * | 2003-05-15 | 2004-11-25 | Nikon Corporation | 露光装置及びデバイス製造方法 |
TWI463533B (zh) * | 2003-05-23 | 2014-12-01 | 尼康股份有限公司 | An exposure method, an exposure apparatus, and an element manufacturing method |
TWI616932B (zh) | 2003-05-23 | 2018-03-01 | Nikon Corp | Exposure device and component manufacturing method |
KR101915914B1 (ko) | 2003-05-28 | 2018-11-06 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7317504B2 (en) * | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI409853B (zh) | 2003-06-13 | 2013-09-21 | 尼康股份有限公司 | An exposure method, a substrate stage, an exposure apparatus, and an element manufacturing method |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
KR101289979B1 (ko) | 2003-06-19 | 2013-07-26 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
DE60308161T2 (de) * | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1494074A1 (en) * | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1639391A4 (en) * | 2003-07-01 | 2009-04-29 | Nikon Corp | USE OF FLUIDS SPECIFIED ISOTOPICALLY AS OPTICAL ELEMENTS |
EP2466382B1 (en) | 2003-07-08 | 2014-11-26 | Nikon Corporation | Wafer table for immersion lithography |
JP4515385B2 (ja) | 2003-07-09 | 2010-07-28 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
KR101296501B1 (ko) * | 2003-07-09 | 2013-08-13 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
CN102944981A (zh) | 2003-07-09 | 2013-02-27 | 株式会社尼康 | 曝光装置、器件制造方法 |
US7738074B2 (en) | 2003-07-16 | 2010-06-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE10333326B4 (de) * | 2003-07-23 | 2007-03-15 | Evotec Technologies Gmbh | Vorrichtung und Verfahren zur Untersuchung chemischer und/oder biologischer Proben sowie Objektivaufsatz |
WO2005010960A1 (ja) | 2003-07-25 | 2005-02-03 | Nikon Corporation | 投影光学系の検査方法および検査装置、ならびに投影光学系の製造方法 |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
KR101343720B1 (ko) | 2003-07-28 | 2013-12-20 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의제어 방법 |
EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7370659B2 (en) * | 2003-08-06 | 2008-05-13 | Micron Technology, Inc. | Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
KR101419192B1 (ko) | 2003-08-29 | 2014-07-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
KR101523180B1 (ko) | 2003-09-03 | 2015-05-26 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
JP4444920B2 (ja) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
TWI610342B (zh) | 2003-09-29 | 2018-01-01 | 曝光裝置及曝光方法、以及元件製造方法 | |
JP2005136374A (ja) * | 2003-10-06 | 2005-05-26 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びそれを用いたパターン形成方法 |
JP2005136364A (ja) | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | 基板搬送装置、露光装置、並びにデバイス製造方法 |
KR20060126949A (ko) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법 |
WO2005036621A1 (ja) | 2003-10-08 | 2005-04-21 | Zao Nikon Co., Ltd. | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 |
TW201738932A (zh) | 2003-10-09 | 2017-11-01 | Nippon Kogaku Kk | 曝光裝置及曝光方法、元件製造方法 |
EP1524557A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7678527B2 (en) * | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
EP1679738A4 (en) * | 2003-10-28 | 2008-08-06 | Nikon Corp | EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD |
US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7113259B2 (en) * | 2003-10-31 | 2006-09-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005159322A (ja) * | 2003-10-31 | 2005-06-16 | Nikon Corp | 定盤、ステージ装置及び露光装置並びに露光方法 |
CN100461336C (zh) * | 2003-10-31 | 2009-02-11 | 株式会社尼康 | 曝光装置以及器件制造方法 |
JP2007525824A (ja) * | 2003-11-05 | 2007-09-06 | ディーエスエム アイピー アセッツ ビー.ブイ. | マイクロチップを製造するための方法および装置 |
EP1531362A3 (en) * | 2003-11-13 | 2007-07-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing apparatus and pattern formation method |
US7528929B2 (en) | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6970233B2 (en) * | 2003-12-03 | 2005-11-29 | Texas Instruments Incorporated | System and method for custom-polarized photolithography illumination |
EP1699072B1 (en) * | 2003-12-03 | 2016-08-31 | Nikon Corporation | Exposure apparatus and exposure method |
WO2005106589A1 (en) * | 2004-05-04 | 2005-11-10 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus and immersion liquid therefore |
KR101119813B1 (ko) | 2003-12-15 | 2012-03-06 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
US7385764B2 (en) | 2003-12-15 | 2008-06-10 | Carl Zeiss Smt Ag | Objectives as a microlithography projection objective with at least one liquid lens |
JP4308638B2 (ja) * | 2003-12-17 | 2009-08-05 | パナソニック株式会社 | パターン形成方法 |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP3376523A1 (en) * | 2004-01-05 | 2018-09-19 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
EP1706793B1 (en) | 2004-01-20 | 2010-03-03 | Carl Zeiss SMT AG | Exposure apparatus and measuring device for a projection lens |
US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
KR101276392B1 (ko) | 2004-02-03 | 2013-06-19 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
CN100592210C (zh) * | 2004-02-13 | 2010-02-24 | 卡尔蔡司Smt股份公司 | 微平版印刷投影曝光装置的投影物镜 |
JP2007522508A (ja) * | 2004-02-13 | 2007-08-09 | カール・ツアイス・エスエムテイ・アーゲー | マイクロリソグラフィック投影露光装置のための投影対物レンズ |
US20070030467A1 (en) * | 2004-02-19 | 2007-02-08 | Nikon Corporation | Exposure apparatus, exposure method, and device fabricating method |
TW201816844A (zh) | 2004-03-25 | 2018-05-01 | 日商尼康股份有限公司 | 曝光裝置、曝光方法、及元件製造方法 |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2490248A3 (en) * | 2004-04-19 | 2018-01-03 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US8054448B2 (en) | 2004-05-04 | 2011-11-08 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005119371A1 (en) * | 2004-06-01 | 2005-12-15 | E.I. Dupont De Nemours And Company | Ultraviolet-transparent alkanes and processes using same in vacuum and deep ultraviolet applications |
WO2005119368A2 (en) | 2004-06-04 | 2005-12-15 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
EP1768169B9 (en) * | 2004-06-04 | 2013-03-06 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
KR101747662B1 (ko) | 2004-06-09 | 2017-06-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US8373843B2 (en) * | 2004-06-10 | 2013-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US20070222959A1 (en) * | 2004-06-10 | 2007-09-27 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8508713B2 (en) * | 2004-06-10 | 2013-08-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8717533B2 (en) * | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
EP2624282B1 (en) * | 2004-06-10 | 2017-02-08 | Nikon Corporation | Immersion exposure apparatus and method, and methods for producing a device |
KR20120026639A (ko) * | 2004-06-10 | 2012-03-19 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 및 디바이스 제조 방법 |
JP4515335B2 (ja) * | 2004-06-10 | 2010-07-28 | 株式会社ニコン | 露光装置、ノズル部材、及びデバイス製造方法 |
US7481867B2 (en) | 2004-06-16 | 2009-01-27 | Edwards Limited | Vacuum system for immersion photolithography |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8384874B2 (en) | 2004-07-12 | 2013-02-26 | Nikon Corporation | Immersion exposure apparatus and device manufacturing method to detect if liquid on base member |
JP3870207B2 (ja) * | 2004-08-05 | 2007-01-17 | キヤノン株式会社 | 液浸露光装置及びデバイス製造方法 |
US7304715B2 (en) | 2004-08-13 | 2007-12-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR20070048164A (ko) | 2004-08-18 | 2007-05-08 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060046211A1 (en) * | 2004-08-27 | 2006-03-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Effectively water-free immersion lithography |
US20060044533A1 (en) * | 2004-08-27 | 2006-03-02 | Asmlholding N.V. | System and method for reducing disturbances caused by movement in an immersion lithography system |
US7522261B2 (en) * | 2004-09-24 | 2009-04-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7119876B2 (en) * | 2004-10-18 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7379155B2 (en) | 2004-10-18 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR20070095275A (ko) * | 2004-10-22 | 2007-09-28 | 칼 짜이스 에스엠테 아게 | 마이크로리소그래피를 위한 투영 노출 장치 |
US7156925B1 (en) | 2004-11-01 | 2007-01-02 | Advanced Micro Devices, Inc. | Using supercritical fluids to clean lenses and monitor defects |
KR100593751B1 (ko) * | 2004-11-16 | 2006-06-28 | 삼성전자주식회사 | 오토 포커스 시스템, 오토 포커스 방법 및 이를 이용한노광장치 |
JP2008521044A (ja) * | 2004-11-17 | 2008-06-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 流体紫外レンズ |
US7230681B2 (en) * | 2004-11-18 | 2007-06-12 | International Business Machines Corporation | Method and apparatus for immersion lithography |
US7362412B2 (en) * | 2004-11-18 | 2008-04-22 | International Business Machines Corporation | Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system |
EP1833081A4 (en) * | 2004-12-07 | 2010-11-24 | Nikon Corp | EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD |
US7397533B2 (en) | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE602006012746D1 (de) * | 2005-01-14 | 2010-04-22 | Asml Netherlands Bv | Lithografische Vorrichtung und Herstellungsverfahren |
SG124351A1 (en) | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7903233B2 (en) * | 2005-01-21 | 2011-03-08 | Nikon Corporation | Offset partial ring seal in immersion lithographic system |
WO2006080250A1 (ja) * | 2005-01-25 | 2006-08-03 | Jsr Corporation | 液浸型露光システム、液浸型露光用液体のリサイクル方法及び供給方法 |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
EP1863070B1 (en) | 2005-01-31 | 2016-04-27 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
US20070258068A1 (en) * | 2005-02-17 | 2007-11-08 | Hiroto Horikawa | Exposure Apparatus, Exposure Method, and Device Fabricating Method |
US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
US20060232753A1 (en) * | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
EP1720072B1 (en) | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Compositons and processes for immersion lithography |
US8248577B2 (en) * | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20070004182A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and system for inhibiting immersion lithography defect formation |
US7691559B2 (en) * | 2005-06-30 | 2010-04-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography edge bead removal |
US7583358B2 (en) * | 2005-07-25 | 2009-09-01 | Micron Technology, Inc. | Systems and methods for retrieving residual liquid during immersion lens photolithography |
US7456928B2 (en) * | 2005-08-29 | 2008-11-25 | Micron Technology, Inc. | Systems and methods for controlling ambient pressure during processing of microfeature workpieces, including during immersion lithography |
US20070058263A1 (en) * | 2005-09-13 | 2007-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and methods for immersion lithography |
US7357768B2 (en) * | 2005-09-22 | 2008-04-15 | William Marshall | Recliner exerciser |
JP2007088339A (ja) * | 2005-09-26 | 2007-04-05 | Nikon Corp | 露光装置、及びデバイス製造方法 |
US7560199B2 (en) * | 2005-10-20 | 2009-07-14 | Chartered Semiconductor Manufacturing Ltd. | Polarizing photolithography system |
US7986395B2 (en) * | 2005-10-24 | 2011-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography apparatus and methods |
US7864292B2 (en) | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7656501B2 (en) * | 2005-11-16 | 2010-02-02 | Asml Netherlands B.V. | Lithographic apparatus |
US7804577B2 (en) * | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
US7773195B2 (en) * | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
KR100768849B1 (ko) * | 2005-12-06 | 2007-10-22 | 엘지전자 주식회사 | 계통 연계형 연료전지 시스템의 전원공급장치 및 방법 |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8472004B2 (en) * | 2006-01-18 | 2013-06-25 | Micron Technology, Inc. | Immersion photolithography scanner |
US7893047B2 (en) * | 2006-03-03 | 2011-02-22 | Arch Chemicals, Inc. | Biocide composition comprising pyrithione and pyrrole derivatives |
JP4719069B2 (ja) * | 2006-04-21 | 2011-07-06 | パナソニック株式会社 | レジスト材料及びそれを用いたパターン形成方法 |
DE102006021797A1 (de) | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung mit thermischer Dämpfung |
US7705965B2 (en) * | 2006-05-15 | 2010-04-27 | Micronic Laser Systems Ab | Backside lithography and backside immersion lithography |
US8564759B2 (en) * | 2006-06-29 | 2013-10-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
EP2420892A1 (en) * | 2006-10-30 | 2012-02-22 | Rohm and Haas Electronic Materials LLC | Compositions and processes for immersion lithography |
US8654305B2 (en) | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
EP2034363A2 (de) * | 2007-06-22 | 2009-03-11 | Carl Zeiss SMT AG | Optische Baugruppe, Projektionsbelichtungsanlage für die Halbleiterlithogaphie und Projektionsobjektiv |
TWI389551B (zh) * | 2007-08-09 | 2013-03-11 | Mstar Semiconductor Inc | 迦瑪校正裝置 |
EP2056162B1 (en) | 2007-11-05 | 2016-05-04 | Rohm and Haas Electronic Materials LLC | Process for immersion lithography |
KR101448152B1 (ko) | 2008-03-26 | 2014-10-07 | 삼성전자주식회사 | 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서 |
NL1036766A1 (nl) * | 2008-04-25 | 2009-10-27 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus. |
US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
DE102009004618A1 (de) * | 2009-01-15 | 2010-07-22 | Schaeffler Technologies Gmbh & Co. Kg | Spannschiene für Zugmitteltriebe an Brennkraftmaschinen |
EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
TWI542952B (zh) * | 2010-12-02 | 2016-07-21 | Asml控股公司 | 圖案化裝置支撐件 |
DE102017119093A1 (de) | 2017-08-21 | 2019-02-21 | Carl Zeiss Microscopy Gmbh | Immersionsmikroskopie |
DE102017119094A1 (de) | 2017-08-21 | 2019-02-21 | Carl Zeiss Microscopy Gmbh | Scannende Immersionsmikroskopie |
DE102017119095A1 (de) | 2017-08-21 | 2019-02-21 | Carl Zeiss Microscopy Gmbh | Mikroskopobjektiv und Mikroskop mit einem solchen Objektiv |
FR3086067A1 (fr) * | 2018-09-18 | 2020-03-20 | Centre National De La Recherche Scientifique | Accessoire amovible de collecte d'un surplus de liquide d'immersion pour un objectif a immersion inverse. |
JP7145051B2 (ja) * | 2018-11-21 | 2022-09-30 | 株式会社エビデント | 倒立型顕微鏡 |
Family Cites Families (147)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL67177C (zh) * | 1939-07-01 | 1900-01-01 | ||
US3243321A (en) * | 1962-11-02 | 1966-03-29 | Atlas Copco Ab | Method of teflon coating of metals |
GB1242527A (en) | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US3573975A (en) | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
EP0023231B1 (de) | 1979-07-27 | 1982-08-11 | Tabarelli, Werner, Dr. | Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe |
FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
JPS5754317A (en) | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4390273A (en) | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
US4405701A (en) | 1981-07-29 | 1983-09-20 | Western Electric Co. | Methods of fabricating a photomask |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
DD206607A1 (de) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur beseitigung von interferenzeffekten |
JPS5919912A (ja) * | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD242880A1 (de) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | Einrichtung zur fotolithografischen strukturuebertragung |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
US5040020A (en) | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
US5059287A (en) * | 1989-06-16 | 1991-10-22 | Charles W. Harkey, Sr. | Portable water distiller |
JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JP3203698B2 (ja) | 1991-09-02 | 2001-08-27 | 株式会社ニコン | 顕微鏡の液浸対物レンズ及び防水キャップ |
JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JPH06208058A (ja) * | 1993-01-13 | 1994-07-26 | Olympus Optical Co Ltd | 顕微鏡対物レンズ |
JP3747951B2 (ja) * | 1994-11-07 | 2006-02-22 | 株式会社ニコン | 反射屈折光学系 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US5925956A (en) * | 1995-06-30 | 1999-07-20 | Nikon Corporation | Stage construction incorporating magnetically levitated movable stage |
KR0171984B1 (ko) * | 1995-12-11 | 1999-03-30 | 김주용 | 박막 트랜지스터의 자기 정렬 노광 방법 |
US6104687A (en) | 1996-08-26 | 2000-08-15 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JPH10255139A (ja) | 1997-03-14 | 1998-09-25 | Matsushita Refrig Co Ltd | 自動販売機の商品搬出装置 |
JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
US5900354A (en) | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
DE19746661C1 (de) * | 1997-10-23 | 1999-05-12 | Leica Microsystems | Vorrichtung zum Mikroskopieren einer biologischen Probe |
WO1999031717A1 (fr) | 1997-12-12 | 1999-06-24 | Nikon Corporation | Procede d'exposition par projection et graveur a projection |
WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
JP2000012453A (ja) * | 1998-06-18 | 2000-01-14 | Nikon Corp | 露光装置及びその使用方法、露光方法、並びにマスクの製造方法 |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
TWI242111B (en) | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
JP2001272604A (ja) | 2000-03-27 | 2001-10-05 | Olympus Optical Co Ltd | 液浸対物レンズおよびそれを用いた光学装置 |
JP2002033271A (ja) * | 2000-05-12 | 2002-01-31 | Nikon Corp | 投影露光方法、それを用いたデバイス製造方法、及び投影露光装置 |
US7234477B2 (en) * | 2000-06-30 | 2007-06-26 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
TW591653B (en) | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
KR20030051624A (ko) * | 2000-11-22 | 2003-06-25 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
DE10123027B4 (de) * | 2001-05-11 | 2005-07-21 | Evotec Oai Ag | Vorrichtung zur Untersuchung chemischer und/oder biologischer Proben |
US6600547B2 (en) | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
WO2003040830A2 (en) | 2001-11-07 | 2003-05-15 | Applied Materials, Inc. | Optical spot grid array printer |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
JP4117530B2 (ja) | 2002-04-04 | 2008-07-16 | セイコーエプソン株式会社 | 液量判定装置、露光装置、および液量判定方法 |
US20040000624A1 (en) * | 2002-05-10 | 2004-01-01 | Blaisdell Jared D. | Stanchion; Equipment assembly; and, method |
US6980293B1 (en) * | 2002-06-11 | 2005-12-27 | Olympus Optical Co., Ltd. | Immersion medium supply apparatus, fluorescence spectrometry inspection apparatus, and culture microscope |
CN100462844C (zh) | 2002-08-23 | 2009-02-18 | 株式会社尼康 | 投影光学系统、微影方法、曝光装置及使用此装置的方法 |
US7252097B2 (en) * | 2002-09-30 | 2007-08-07 | Lam Research Corporation | System and method for integrating in-situ metrology within a wafer process |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US7240679B2 (en) * | 2002-09-30 | 2007-07-10 | Lam Research Corporation | System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold |
US7069937B2 (en) * | 2002-09-30 | 2006-07-04 | Lam Research Corporation | Vertical proximity processor |
US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN101382738B (zh) | 2002-11-12 | 2011-01-12 | Asml荷兰有限公司 | 光刻投射装置 |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
JP3977324B2 (ja) | 2002-11-12 | 2007-09-19 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
CN100568101C (zh) * | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
TWI255971B (en) | 2002-11-29 | 2006-06-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
CN1723541B (zh) | 2002-12-10 | 2010-06-02 | 株式会社尼康 | 曝光装置和器件制造方法 |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
KR20050085236A (ko) | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
EP1571698A4 (en) | 2002-12-10 | 2006-06-21 | Nikon Corp | EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
US7948604B2 (en) | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
US6992750B2 (en) | 2002-12-10 | 2006-01-31 | Canon Kabushiki Kaisha | Exposure apparatus and method |
KR101037057B1 (ko) | 2002-12-10 | 2011-05-26 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
WO2004053959A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 光学素子及びその光学素子を用いた投影露光装置 |
SG165169A1 (en) | 2002-12-10 | 2010-10-28 | Nikon Corp | Liquid immersion exposure apparatus |
AU2003289239A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure system and device producing method |
AU2003302831A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
AU2003289272A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
ATE424026T1 (de) | 2002-12-13 | 2009-03-15 | Koninkl Philips Electronics Nv | Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht |
JP4364805B2 (ja) | 2002-12-19 | 2009-11-18 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上にスポットを照射する方法及び装置 |
US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
WO2004086468A1 (ja) | 2003-02-26 | 2004-10-07 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
WO2004086470A1 (ja) | 2003-03-25 | 2004-10-07 | Nikon Corporation | 露光装置及びデバイス製造方法 |
DE602004020200D1 (de) | 2003-04-07 | 2009-05-07 | Nippon Kogaku Kk | Belichtungsgerät und verfahren zur herstellung einer vorrichtung |
KR101177331B1 (ko) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
WO2004093160A2 (en) | 2003-04-10 | 2004-10-28 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
KR20140139139A (ko) | 2003-04-10 | 2014-12-04 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
KR101469405B1 (ko) | 2003-04-10 | 2014-12-10 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
SG2012031217A (en) | 2003-04-11 | 2015-09-29 | Nippon Kogaku Kk | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
ATE449982T1 (de) | 2003-04-11 | 2009-12-15 | Nikon Corp | Reinigungsverfahren für optik in immersionslithographie |
SG194246A1 (en) | 2003-04-17 | 2013-11-29 | Nikon Corp | Optical arrangement of autofocus elements for use with immersion lithography |
TWI237307B (en) | 2003-05-01 | 2005-08-01 | Nikon Corp | Optical projection system, light exposing apparatus and light exposing method |
SG10201405231YA (en) | 2003-05-06 | 2014-09-26 | Nippon Kogaku Kk | Projection optical system, exposure apparatus, and exposure method |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
WO2004102646A1 (ja) | 2003-05-15 | 2004-11-25 | Nikon Corporation | 露光装置及びデバイス製造方法 |
TWI463533B (zh) | 2003-05-23 | 2014-12-01 | 尼康股份有限公司 | An exposure method, an exposure apparatus, and an element manufacturing method |
TWI616932B (zh) | 2003-05-23 | 2018-03-01 | Nikon Corp | Exposure device and component manufacturing method |
TWI282487B (en) | 2003-05-23 | 2007-06-11 | Canon Kk | Projection optical system, exposure apparatus, and device manufacturing method |
KR101915914B1 (ko) | 2003-05-28 | 2018-11-06 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
US7274472B2 (en) | 2003-05-28 | 2007-09-25 | Timbre Technologies, Inc. | Resolution enhanced optical metrology |
TWI442694B (zh) | 2003-05-30 | 2014-06-21 | Asml Netherlands Bv | 微影裝置及元件製造方法 |
US7716025B2 (en) * | 2003-06-11 | 2010-05-11 | Emerson Climate Technologies, Inc. | Condensing unit configuration system |
US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI409853B (zh) | 2003-06-13 | 2013-09-21 | 尼康股份有限公司 | An exposure method, a substrate stage, an exposure apparatus, and an element manufacturing method |
KR101289979B1 (ko) | 2003-06-19 | 2013-07-26 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
DE60308161T2 (de) | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1498778A1 (en) | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE60321779D1 (de) | 2003-06-30 | 2008-08-07 | Asml Netherlands Bv | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
EP1494074A1 (en) | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005015315A2 (de) | 2003-07-24 | 2005-02-17 | Carl Zeiss Smt Ag | Mikrolithographische projektionsbelichtungsanlage sowie verfahren zum einbringen einer immersionsflüssigkeit in einem immersionsraum |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
KR101419192B1 (ko) | 2003-08-29 | 2014-07-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
KR20060126949A (ko) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법 |
US7528929B2 (en) | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4323946B2 (ja) | 2003-12-19 | 2009-09-02 | キヤノン株式会社 | 露光装置 |
US20050231695A1 (en) | 2004-04-15 | 2005-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for immersion lithography using high PH immersion fluid |
JP4305915B2 (ja) | 2004-06-17 | 2009-07-29 | シャープ株式会社 | 基地局選択に用いる基準を求める方法 |
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2003
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2004
- 2004-04-26 US US10/831,300 patent/US6980277B2/en not_active Expired - Fee Related
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- 2004-06-23 TW TW093118167A patent/TWI280465B/zh not_active IP Right Cessation
- 2004-06-25 CN CNB2007101065145A patent/CN100573338C/zh not_active Expired - Fee Related
- 2004-06-25 JP JP2004188523A patent/JP4348240B2/ja not_active Expired - Fee Related
- 2004-06-25 CN CNB2004100600628A patent/CN1322375C/zh not_active Expired - Fee Related
- 2004-06-25 KR KR1020040048066A patent/KR100624611B1/ko not_active IP Right Cessation
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- 2005-07-22 US US11/187,010 patent/US7898643B2/en not_active Expired - Fee Related
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- 2008-11-20 JP JP2008297046A patent/JP5043806B2/ja not_active Expired - Fee Related
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- 2010-05-25 JP JP2010119262A patent/JP2010183118A/ja active Pending
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JP2010183118A (ja) | 2010-08-19 |
EP1491957A3 (en) | 2006-06-21 |
JP4348240B2 (ja) | 2009-10-21 |
TWI280465B (en) | 2007-05-01 |
US7898643B2 (en) | 2011-03-01 |
US20110122380A1 (en) | 2011-05-26 |
KR100624611B1 (ko) | 2006-09-20 |
JP2010183119A (ja) | 2010-08-19 |
JP5043806B2 (ja) | 2012-10-10 |
US6980277B2 (en) | 2005-12-27 |
CN1322375C (zh) | 2007-06-20 |
EP1491957A2 (en) | 2004-12-29 |
US20040263808A1 (en) | 2004-12-30 |
JP2005020013A (ja) | 2005-01-20 |
CN101059659A (zh) | 2007-10-24 |
JP2009094528A (ja) | 2009-04-30 |
TW200502720A (en) | 2005-01-16 |
US6809794B1 (en) | 2004-10-26 |
US20050254031A1 (en) | 2005-11-17 |
KR20050001445A (ko) | 2005-01-06 |
CN100573338C (zh) | 2009-12-23 |
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