CN1511346A - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN1511346A
CN1511346A CNA02808408XA CN02808408A CN1511346A CN 1511346 A CN1511346 A CN 1511346A CN A02808408X A CNA02808408X A CN A02808408XA CN 02808408 A CN02808408 A CN 02808408A CN 1511346 A CN1511346 A CN 1511346A
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China
Prior art keywords
current path
bonding
path parts
parts
mosfet
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CN100418217C (zh
Inventor
船户纪秀
�˱�Т
难波正孝
־
泽野博志
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Toshiba Corp
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Toshiba Corp
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Abstract

提供一种半导体器件，包括：具有多个电极的半导体元件；引线框架的多个键合部分；电连接多个电极的至少之一和多个键合部分之一的板状电流通路部件；以及将具有多个电极的半导体元件、引线框架的多个键合部分和电流通路材料封装起来的外壳，其中板状电流通路材料设置成直接键合到多个电极之一和多个键合部分之一上，并且电流通路部件的中间部分与半导体元件的表面隔开。还提供一种半导体器件的制造方法。

Description

半导体器件及其制造方法
                      技术领域
本发明涉及半导体器件及其制造方法，特别地，涉及用于电连接形成在半导体器件中的电极(例如半导体元件的源电极)和引线框架连接部分的电流通路部件(material)，以及通过采用这种电流通路部件连接源电极和引线框架连接部分的方法。
                      背景技术
近来许多类型的半导体器件被采用作为产品。这些半导体器件之一是被密封在SOP-8封装中被称为MOSFET 101的半导体器件(如图1所示)。下面以密封在SOP-8封装中的MOSFET 101为例介绍常规半导体器件及其制造方法。
如图1所示，由环氧树脂等构成的模制树脂102来密封MOSFET101。正如SOP-8封装的名称所隐含的，MOSFET 101具有八个引线框架端子103。引线框架端子103暴露于在模制树脂102的外部，以便将引线框架端子103分成在模制树脂102的两侧互相面对的四组。
MOSFET 101的内部结构的主要部件如图2A和2B所示构成。图2A是表示沿着图1中的线A-A截取的MOSFET 101的剖面图。图2B是表示沿着图中的线B-B截取的MOSFET 101的剖面图。八个引线框架端子103当中，在同一侧上的四个引线框架端子103在模制树脂102内部组合成一个(如图2A所示)。如图2A和2B所示，组合成一个的四个引线框架端子设置在模制树脂102内，以便从与半导体元件104的源电极104s和栅电极104g相反的一侧(图2A中的上侧，或者图2B中的左侧)电连接。
如图2A和2B所示，其余四个引线框架端子103设置在模制树脂102内，以便不直接连接到包括源电极104s和栅电极104g的半导体元件104以及组合成一个的四个引线框架端子103上。其余四个引线框架端子103中，在源极侧的三个引线框架端子103组合成一个(如图2A所示)。栅极侧上的其余一个引线框架端子103与组合成一个的三个源极侧引线框架端子103电分开。
在具有这种内部结构的MOSFET 101中，通过由金属(例如铝(Al)或金(Au))构成的多个键合线105将半导体元件104的源电极104s和组合成一个的三个源极侧引线框架端子103电连接。同样，通过一个键合线106将半导体元件104的栅电极104g和其余一个栅极侧引线框架端子103电连接。
近年来，MOSFET 101在速度和性能上都有所提高，同时降低了功耗和工作电压。换言之，近来的MOSFET 101被设计成以较低的电压呈现较高的性能。为了满足这些矛盾的需求，伴随着电路的微型构图，近来的MOSFET 101趋于在包括电路的整个器件中设定低内电阻(导通电阻)。
如果随着这个趋势而减小MOSFET 101的内电阻，则不能忽略键合线105和106对包括半导体元件104的整个MOSFET 101的内电阻的影响。为了减小MOSFET 101的内电阻，必须减小键合线105和106的电阻。
为了减小键合线105和106的电阻，例如，可将键合线105和106的金属材料改变为电阻比Al或Au低的另一种金属。这种方法限制了可用金属的种类，并且不能大大减小键合线105和106的电阻。
仅仅改变键合线105和106的金属材料不能提高MOSFET 101的性能。通过减小内电阻很难进一步改进功率MOSFET。
作为减小键合线105和106的电阻的另一种方法，例如，可减小键合线105和106的截面面积。这种方法面临的几个技术难题是：考虑键合线105和106的直径以及键合线105和106的数量的空间限制；键合线105和106之间的电短路的可能性；和当多个键合线105和106键合到小面积源电极104s、栅电极104g以及引线框架连接部分上时的不良键合强度。
为解决这些技术难题和减小MOSFET 101的电阻，已经开发了MOSFET 111。在MOSFET 111中，如图3A和3B所示，流过的电流比流过栅电极104g的电流大的源电极104s和组合成一个的三个源极侧引线框架端子103采用电流通路部件107电连接，其中电流通路部件由平板状(带状)金属构成(以下称为带107)而不是由多个键合线105构成。
在MOSFET 111中，源电极104s和组合成一个的三个源极侧引线框架端子103通过平板状带107连接。源电极104s和源极侧引线框架端子103之间的电流通路的截面积大于在MOSFET 101中源电极104s和引线框架端子103之间的电流通路的截面积，在MOSFET 101中，由多个键合线105连接源电极104s和引线框架端子103。这就是说，在MOSFET 111中，减小了源电极104s和源极侧引线框架端子103之间的电阻，由此减小了整个器件的电阻。
与上述键合线105和106相同，通过导电连接材料如固化导电材料或焊料将带107连接到源电极104s和源极侧引线框架端子103。例如，在日本专利申请KOKAI公报No.2000-114445中公开了具有这种结构的MOSFET 111。
一般情况下，在半导体器件内部使用的键合材料如固化导电材料或焊料随着温度变化容易产生故障。为了评估这种故障模式，对MOSFET 111在温度急剧变化的环境下多次进行温度循环测试。在这种情况下，在固化导电材料或焊料的内部以及源电极104s、引线框架端子103和带107以及固化导电材料或焊料之间的界面附近出现易碎性、裂缝等。可以评估具有由固化导电材料、焊料等连接的带107的MOSFET 111在温度变化下的耐久性。
形成为平板并通过固化导电材料、焊料等连接到源电极104s的带107呈现在显微水平的不稳定的电连接状态。更具体地说，容易在图3B中的部分Z处(即源电极104s的外部)产生芯片边缘接触，其中在那里带107接触半导体元件(半导体芯片)104的周边部分。结果，在带107和半导体元件104的周边部分之间容易产生电短路。
在这种方式下，具有这种内部结构的MOSFET 111的电性能不稳定。更具体地说，出现初始短路故障的样品占制造的MOSFET 111样品总数的18.5％。
本发明的一个目的在于提供高耐久性的半导体器件及其制造方法，该半导体器件可以以低功耗工作并呈现稳定的电性能。
                      发明内容
为克服常规缺陷，根据本发明的一方面，提供一种半导体器件，包括：具有多个电极的半导体元件；引线框架的多个键合部分；连接多个电极的至少之一和引线框架的多个键合部分之一的板状电流通路部件；以及将具有多个电极的半导体部件、引线框架的多个键合部分和电流通路部件封装起来的外壳，其中板状电流通路部件设置成直接键合到多个电极之一和多个键合部分之一上，并且电流通路部件的中间部分与半导体元件的表面隔开。
根据本发明的另一方面，提供一种制造半导体器件的方法，包括以下步骤：形成半导体元件；形成板状电流通路部件，该电流通路部件电连接半导体元件的多个电极的至少一个和引线框架的多个连接部分之一；形成电流通路部件，以便将板状电流通路部件的中间部分与半导体元件的表面隔开；和采用电流通路部件在电流通路部件的两个端部处，直接电键合多个电极之一和引线框架的多个键合部分之
                      附图简述
图1是表示常规半导体器件的外观的立体图；
图2A是表示沿着图1的线A-A截取的常规半导体器件的内部结构的剖视图；
图2B是表示沿着图1的线B-B截取的常规半导体器件的内部结构的剖视图；
图3A是表示沿着图1的线A-A截取的常规半导体器件的另一内部结构的剖视图；
图3B是表示沿着图1的线B-B截取的常规半导体器件的另一内部结构的剖视图；
图4是表示根据本发明第一实施例的半导体器件的外观的立体图；
图5A是表示沿着图4的线A-A截取的半导体器件的内部结构的剖视图；
图5B是表示沿着图4的线B-B截取的半导体器件的内部结构的剖视图；
图6是表示图4中的电流通路部件的导通电阻和常规电流通路部件的导通电阻之间的对比的曲线；
7A是表示图4中的电流通路部件的导通电阻关于Al键合带厚度的相关性的曲线图；
图7B是表示图4中的电流通路部件的导通电阻关于Al键合带宽度的相关性的曲线图；
图8是表示在温度循环测试中图4中的电流通路部件和两种常规电流通路部件之间的可靠性的比较的曲线图；
图9A是表示在去掉第二实施例中的电流通路部件之前的状态图；
图9B是表示在去掉第二实施例中的电流通路部件之后的状态图；
图9C是表示其中第二实施例中的电流通路部件形成为在图4的半导体器件中使用的形状的状态图；
图9D是表示其中第二实施例中的电流通路部件形成为另一种形状的状态图；
图9E是表示其中第二实施例中的电流通路部件形成为又一种形状的状态图；
图10A是表示其中通过键合尖角(horn)真空保持第二实施例中图9C的电流通路部件的状态图；
图10B是表示其中第二实施例中图10A的电流通路部件被以超声波方式同时键合到半导体元件的源电极4s和源极侧接线柱7s的状态图；
图10C是表示其中第二实施例中图9C的电流通路部件被以超声波方式同时键合到半导体元件的源电极4s和源极侧接线柱7s的状态图；
图11是表示沿着线A-A截取的根据第三实施例的半导体器件的内部结构的剖视图；
图12是表示沿着线A-A截取的根据第四实施例的半导体器件的内部结构的剖视图；
图13是表示沿着线B-B截取的根据第五实施例的半导体器件的内部结构的剖视图；
图14A是表示沿着线A-A截取的根据第六实施例的半导体器件的内部结构的剖视图；
图14B是表示沿着线B-B截取的根据第六实施例的半导体器件的内部结构的剖视图；
图15A是表示在图14A和14B的半导体器件中具有四个槽的电流通路部件的示意图；
图15B是表示在图14A和14B的半导体器件中具有三个槽的电流通路部件的示意图；
图15C是表示在图14A和14B的半导体器件中具有六个小圆孔的电流通路部件的示意图；
图15D是表示在图14A和14B的半导体器件中具有一个圆孔的电流通路部件的示意图；和
图15E是表示在图14A和14B的半导体器件中具有半圆形孔和凹口的电流通路部件的示意图。
                      实施本发明的最佳方式
下面参照几个所附示图介绍根据本发明实施例的半导体器件及其制造方法。
<第一实施例>
下面参照图4、5A和5B介绍根据第一实施例的半导体器件。第一实施例将以密封到SOP-8封装中的MOSFET(功率MOSFET)1为例详细介绍其结构。
图4是表示MOSFET 1的外观的立体图。图5A是表示沿着线A-A截取的图4中的MOSFET 1的内部结构的剖视图。图5B是表示沿着线B-B截取的图4中的MOSFET 1的内部结构的剖视图。
图5A和5B所示的MOSFET 1包括具有多个电极4的半导体元件5、多个引线框架端子3、键合多个电极4的至少之一和多个引线框架键合部分7s和7g的至少之一的板状电流通路部件6、以及封装了多个引线框架端子3、半导体元件5、电流通路部件6等的外壳2。
多个电极4包括源电极4s和栅电极4g。多个引线框架端子3包括三个源极侧引线框架端子3s(组合成一个)、以及一个栅极侧引线框架端子3g。MOSFET 1的漏电极连接到在半导体元件5的背面上组合成一个的四个漏极侧引线框架端子3d上。
源极侧引线框架端子3s在引线框架的源极侧键合部分7s(以下称为源极侧接线柱7s)上组合在一起。栅极侧引线框架端子3g在引线框架的栅极侧键合部分7g(以下称为栅极侧接线柱7g)上连接。
如图5B所示，电流通路部件6的形成，使得键合到源电极4s的部分6a和键合到源极侧接线柱7s的部分6b之间的中间部分6c的下表面与半导体元件5的上表面隔开。此外，电流通路部件6直接键合到源电极4s和源极侧接线柱7s的上表面上。
通过超声波键合，电流通路部件6在其两端部(6a和6b)直接键合到源极侧接线柱7s和源电极4s上，并用作该半导体器件的互连的一部分。电流通路部件6由Al(铝)系列材料构成。电流通路部件6连接在源极侧接线柱7s和半导体元件5的电极4外的至少源电极4s之间。电流通路部件6用作半导体器件的互连的一部分。
如图4所示，用通过例如环氧树脂系列模制树脂模制的外壳2覆盖MOSFET 1。SOP-8封装具有八个引线框架端子3。这些引线框架端子3暴露于外壳2的外部，以便在外壳2的两侧将引线框架端子3分成互相面对的四组。八个引线框架端子3中，图4中只示出了五个引线框架端子3，省略了其余三个引线框架端子3。
下面参照图5A和5B详细介绍MOSFET 1的内部结构的主要部件。如图5A和5B所示，八个引线框架端子当中，一侧上的四个引线框架端子3d通过平板状漏极侧接线柱7d而组合成一个，其中漏极侧接线柱7d连接到外壳2内部的半导体元件5的背面的漏电极上。组合成一个的四个引线框架端子3d设置在外壳2的内部，以便电连接到在与设置半导体元件(半导体芯片)5的源电极(源极焊盘)4s和栅电极(栅极焊盘)4g的另一侧相反的一侧上的芯片的背面上的漏电极(漏极焊盘)。即，组合成一个的四个引线框架端子3d用作MOSFET 1的漏极端子。
在组合这四个端子3d的平板状漏极侧接线柱7d上连接到芯片背面的漏电极的平表面上，设置漏极侧引线框架端子3d。在半导体元件5和漏极侧引线框架端子3d之间，芯片背面的漏电极和漏极侧接线柱7d如此固定，以便通过导电连接材料(如固化导电材料或焊料)使它们以平面形式互相电连接。
如图5A所示，八个引线框架端子中，在另一侧上的其余四个引线框架端子(3s和3g)设置在外壳2的内部，以便不直接连接到具有源电极4s和栅电极4g的半导体元件5上。四个引线框架端子3与包括漏极侧接线柱7d的漏极侧端子3d电断开。四个引线框架端子3中，三个源极侧引线框架端子3s组合成一个。其余一个栅极侧引线框架端子3g与组合成一个的三个源极侧引线框架端子3s电断开。
利用电流通路部件6(如后面所述)经过源极侧接线柱7s将组合成一个的三个源极侧引线框架端子3s连接到半导体元件5的源电极4s上。组合成一个的三个源极侧引线框架端子3s用作MOSFET 1的源极端子。
其余一个栅极侧引线框架端子3g借助一键合线8连接到半导体元件5的栅电极4g上。换言之，其余一个栅极侧引线框架端子3g经过在平板状栅极侧接线柱7g上的键合线8连接到栅电极4g，并用作MOSFET 1的栅极端子。
如上所述，密封到SOP-8封装的MOSFET 1基本上具有三个端子。MOSFET 1的半导体元件5具有三个电极4(源电极4s、栅电极4g和在芯片背面的漏电极(未示出))。在MOSFET 1中，基本上用作三个端子之一的源侧引线框架端子3s和用作三个电极4的另一个的源电极4s经过电流通路部件6选择地连接。
如图5A和5B所示，电流通路部件6平面键合到电极侧键合部分6a上的源电极4s上。此外，电流通路部件6平面键合到接线柱侧键合部分6b上的源极侧接线柱7s上。
电流通路部件6的形成，使得中间部分(横梁部分)6c的下表面与半导体元件5的上表面隔开。利用根据本发明的这种方式形成的电流通路部件6将被称为键合带6。
在键合带6中，电极侧键合部分6a只在源电极4s的区域内平面地键合到半导体元件5上。电极侧键合部分6a和引线框架侧键合部分6b之间的中间部分6c与半导体元件5的上表面隔开。这样，MOSFET1就可以完全避免由现有技术中的芯片边缘接触引起的任何电短路的问题。通过超声波键合同时将键合带6直接平面地键合到源电极4s和源极侧接线柱7s上。
在具有键合带6的MOSFET 1中，半导体元件5的源电极4s和引线框架的源侧接线柱7s之间的电流通路的截面积大于常规MOSFET101中通过多个键合线105的电流通路的总截面积。在MOSFET 1中，源电极4s和源侧引线框架端子3s之间的电阻变得比MOSFET 101中的电阻低得多。
更具体地说，在第一实施例的MOSFET 1中，半导体元件5的芯片尺寸为3.79mm×2.65mm，以及键合带6的宽度为2.0mm并且厚度为0.1mm。由于键合带6由Al制成，因此下面将键合带6称为Al键合带6。
在常规MOSFET 101中，芯片尺寸为3.79mm×2.65mm，这与第一实施例的MOSFET 1的相同。然而，采用约10根60-μmφAu键合线105连接源电极和源侧引线框架端子(图2A示出了八根键合线105)。
由本发明人进行的电阻值测量实验表明，在具有上述结构的常规MOSFET 101中，作为电压VDSS的函数的导通电阻(内电阻Ron)的平均值如图6中的虚线所示变化。在具有Al键合带的第一实施例的MOSFET 1中，根据电压VDSS，导通电阻的平均值如图6的曲线中的实线所示变化。
电压VDD是MOSFET的漏极-源极击穿电压。
在第一实施例的MOSFET 1和常规MOSFET 101中，电阻平均值根据硅衬底(晶片)上的电压VDSS如图6的曲线图中的虚线所示变化。如图6所示，MOSFET 1和101的硅衬底的电阻相对于电压VDSS的大小几乎随着相同的梯度而变化。
在图6中，MOSFET 1和101中的硅衬底的电阻以绝对值之间的差值互相平行变化。通过比较该差值，可以获得电阻值。
整个MOSFET 101的导通电阻和整个MOSFET 1的导通电阻之间的差在图6的虚箭头J所示的范围内几乎是恒定的。整个MOSFET 1的导通电阻和MOSFET 1中的硅衬底的电阻之间的差在图6的实箭头K所示的范围内几乎是恒定的。从这一点看来，MOSFET 101中的10个平行键合线105的布线电阻和MOSFET 1中的Al键合线6的布线电阻之间的差在由图6中的虚线L表示的范围内几乎是恒定的。
如上所述，根据由本发明人所做的图6中所示的电阻测量结果，与MOSFET 101中的10个平行键合线105的布线电阻相比，MOSFET 1中的Al键合带6的布线电阻大大减小了约80％，而且与电压VDSS无关。换言之，在第一实施例的MOSFET 1中，Al键合带6的布线电阻与整个MOSFET 1的导通电阻的比值非常低。
MOSFET 1的Al键合带6的电阻根据带的厚度和宽度如图7A和7B中的实线所示变化。根据实际使用，使用Al键合带6可防止带厚度和宽度上的处理尺寸误差而降低具有上述尺寸的半导体元件5的MOSFET 1的电特性。根据本实施例，通过采用Al键合带6，在使用中电特性可保持在高水平，而不会降低MOSFET 1的工作速度。
第一实施例的Al键合带6通过超声键合直接键合和固定到半导体元件5的源电极4s和源极侧接线柱7s上，而不用任何固化导电材料、焊料等。
为此，MOSFET 1几乎不存在由于外部环境变化(例如在固化导电材料或焊料、和半导体元件5的源电极4s、源极侧接线柱7s、Al键合带6等之间的界面附近的温度变化)而产生的任何易碎性或破裂现象。
具有通过超声波键合直接键合到半导体元件5的源电极4s和源极侧接线柱7s上的Al键合带6的MOSFET 1可以忍受外部环境的变化，例如温度变化。MOSFET 1实现了高度可靠的电特性。
更具体地说，对具有Al键合带6的本发明的MOSFET 1、其中采用10根60-μmφAu键合线键合源电极和源极侧接线柱的常规MOSFET101(将被称为常规A)、以及其中采用焊料将Cu带连接到半导体元件的源电极且稍微不同于MOSFET 1的另一常规MOSFET(被称为常规B)进行温度循环测试，其中温度急剧和大量变化多次，例如连续100次到400次，每100次在-40℃到150℃的温度范围内。然后，进行电特性的可靠性测试。
图8是表示温度循环测试的结果的示意图。如图8中的0和实线所示，本发明的MOSFET 1产生易碎性、破裂等的缺陷率为0％，这与温度循环的次数无关。同样，如图8中的◆和实线所示，具有Au键合线的MOSFET 101(常规A)产生易碎性、破裂等的缺陷率为0％，这与温度循环的次数无关。然而，如图8中的■和实线所示，具有焊接Cu带的常规MOSFET(常规B)在缺陷率上随着温度循环次数的增加而增加。
如上所述，在根据第一实施例的MOSFET 1中，Al键合带6的布线电阻与具有Au键合线的常规MOSFET 101相比减小了约80％。
布线电阻对整个MOSFET 1的导通电阻的影响是非常弱的。具有超声波键合的Al键合带的MOSFET 1是稳定的，在急剧温度变化时没有降低电性能的可靠性。MOSFET 1相对于温度变化呈现出比具有焊接Cu带的常规MOSFET更高的可靠性。
在本实施例的MOSFET 1中，同时通过一次超声波键合将Al键合带6键合到源电极4s和引线框架的源极侧接线柱7s上。很容易使两个键合部分的键合强度相等。即使在键合部分发生外部环境变化(如温度变化、金属疲劳等)也能均匀分散应力。MOSFET 1大大改善了Al键合带6、和源电极4s与源极侧接线柱7s之间的键合部分处的耐久性。
第一实施例的MOSFET 1的功耗低于常规功率MOSFET。MOSFET 1以高速度工作，并具有稳定的电性能、高耐久性和长使用寿命。
<第二实施例>
下面参照图9A-9E和图10A-10C介绍第二实施例。第二实施例将以MOSFET 1为例介绍根据第一实施例的半导体器件的制造方法。
在制造MOSFET 1的方法中，半导体元件5的多个电极外的至少一个电极(例如，源电极4s)和多个引线框架接线柱外的至少一个接线柱(例如源极侧接线柱7s)直接键合到在平板状Al键合带6的两端部处的电极侧键合部分6a和接线柱侧键合部分6b。Al键合带6的中间部分6c与半导体元件5的上表面隔开。
Al键合带6通过超声波键合直接键合到源电极4s和源极侧接线柱7s上。首先，如图9A-9E所示，制造具有希望尺寸的Al键合带6。
更具体地说，例如利用如图9所示切割机10将被滚扎成薄平板并用做Al键合带6的材料的Al板9切割成预定尺寸(长度)。切割机10由用于切割Al板9的旋转切割器11和用于输送Al板9的传送带12构成。传送带12在图9A中的虚箭头所示的方向旋转。Al板9由传送带12在轮廓箭头所示的方向输送Al板9。
旋转切割机11设置在传送带12的端部附近，并且在图9A中的实线箭头方向旋转。旋转切割机11具有两个可旋转的尖锐边缘11a。输送到传送带12的端部的Al板9被尖锐边缘11a切割成预定尺寸，如图9B所示。
被切割成预定尺寸的Al板9是通过成型机(未示出)形成，使得中间部分6c从电极侧键合部分6a(例如源电极4s上的键合部分)和接线柱侧键合部分6b(例如到源极侧接线柱的键合部分)突出，如图9C的侧视图所示。被切割成预定尺寸的Al板9通过成型机形成为具有用于MOSFET 1的预定形状的Al键合带6。
通过切换成型机中的成型模，可以将切割成预定尺寸的Al板9形成为具有各种形状的Al键合带13和14，如图9D和9E所示。
形成为预定形状的Al键合带6被键合到半导体元件5的源电极4a上和源极侧接线柱7s上。作为键合夹具，例如使用图10A中所示的键合尖角15保持Al键合带6。多个真空孔16形成在键合尖角15的内部，并且Al键合带6被抽真空并保持在图10A中的实线箭头所示的方向。在接触Al键合带6的键合尖角15的下表面上形成多个防滑波纹。
如图10B所示，MOSFET 1的漏极侧引线框架端子3d、源极侧引线框架端子3s和栅极侧引线框架端子3g预先设置在键合台17上的预定位置上。利用固化导电材料或焊料将半导体元件5进行芯片键合到漏极侧接线柱7d上，以便使源电极4s朝上。
将由键合尖角15保持的Al键合带6同时键合到按上述方式设置的半导体元件5的源电极4s上和源极侧接线柱7s上。键合尖角15连接到超声波发生器(未示出)。由超声波发生器产生的超声波的最大频率为约60KHz。在一般使用状态下，产生具有约38KHz频率的超声波。通过产生这种超声波，键合尖角15可以超声波方式将Al键合带6同时键合到半导体元件5的源电极4s和源极侧接线柱7s上。
当键合尖角15保持Al键合带6时，它从上端靠近半导体元件5的源电极4s和源极侧接线柱7s。确定Al键合带6是否设置在合适的键合位置。之后，在由键合尖角15保持Al键合带6时，它从上端与半导体元件5的源电极4s和源极侧接线柱7s直接接触。
当保持这种连接状态时，键合尖角15的超声波发生器工作，以便同时将Al键合带6的电极侧键合部分6a以超声波方式直接键合到半导体元件5的源电极4s上，和将Al键合带6的接线柱侧键合部分6b键合到源极侧接线柱7s上，如图10B所示。
Al键合带6的超声波键合结束之后，如图10C所示，半导体元件5的栅电极4g和图5A中所示的栅极侧接线柱7g通过由金属(如Al或Au)制成的键合线8电连接。键合线8可通过与Al键合带6相同的超声波键合或者通过采用固化导电材料、焊料等进行连接。
接着，采用模制树脂(如环氧树脂)封装由Al键合带6键合的半导体元件5、引线框架、键合线8等，以便覆盖它们。半导体元件5、引线框架、键合线8等存放在外壳2中。外壳2被模制成预定形状之后，将引线框架端子3切割成预定长度，由此获得被密封到期望的SOP-8封装中的MOSFET 1。
根据上述第二实施例的半导体器件制造方法，可通过超声波键合将Al键合带6直接键合到半导体元件5的源电极4s和源极侧接线柱7s上，而不用任何固化导电材料、焊料或类似材料。
第二实施例可提供稳定的半导体器件，其中源电极4s和源极侧接线柱7s之间的电阻以及整个器件的导通电阻(内部电阻)很低，利用低功耗实现高速操作，并且相对于外部环境变化(如温度变化)的耐久性和电性能的可靠性很高。
根据本实施例的半导体器件制造方法，半导体元件5的源电极4s和源极侧接线柱7s同时被以超声波方式键合到Al键合带6的两个端部(6a和6b)，提高了可键合性。这可以提高整个半导体器件(MOSFET 1)的可制造性，缩短了制造MOSFET 1所需的时间。
根据由本发明人所做出的原型产品，与制造具有常规Au键合的一个MOSFET 1的时间相比，通过第二实施例的制造方法制造具有Al键合带6的一个MOSFET 1(一个封装)所花费的时间对于每个生产机器(未示出)缩短了约40％。结果是，在具有Al键合带6的MOSFET1的批量生产中，随着制造MOSFET 1的数量增加，每个MOSFET 1的制造成本降低了。对于市场中成本竞争来说这是一个优势。
在常规MOSFET 101中，约10根60-μmφ键合线必须设置在合适位置上和键合到源电极4s和源极侧接线柱7s上。相反，当采用第二实施例的半导体器件制造方法制造MOSFET 1时，可通过一次超声波键合将宽度为2.0mm和厚度为0.1mm的Al键合带6同时键合到源电极4s上和源极侧接线柱7s上。在制造MOSFET 1时Al键合带6的键合故障产生率可减小到由10个键合线形成的Au键合的键合故障产生率的约1/10。
与常规制造方法相比，本实施例的制造方法可以大大提高MOSFET1的产量。如上所述，可以缩短制造MOSFET 1所花费的时间。此外，还显著地提高了MOSFET 1的可制造性(指数)。
第二实施例的半导体器件制造方法通过依次超声波键合同时将Al键合带6的两端部(6a和6b)键合到源电极4s和源极侧接线柱7s上。即使在键合部分产生外部环境变化(如温度变化、金属疲劳等)也能均匀分散应力。本实施例的制造方法可以大大提高Al键合带6、源电极4s和源极侧接线柱7s之间的键合部分处的耐久性。
<第三实施例>
下面参照图11介绍根据第三实施例的半导体器件及其制造方法。第三实施例将解释MOSFET 21的结构和制造方法。
除了连接到半导体元件5的源电极4s和源极侧接线柱7s的Al键合带22的尺寸、形状和数量与上述第一实施例中的Al键合带6的不同之外，图11中所示的MOSFET 21具有与第一实施例的MOSFET 1相同的结构、操作和效果。相同的参考标记表示相同的部件，将省略其解释，并只解释不同之处。
如图11所示，在MOSFET 21中，半导体元件5的源电极4s和源极侧接线柱7s采用多个Al键合带22连接，Al键合带22各形成为细长板状。当Al键合带22的接线柱侧键合部分22b直接以超声波方式键合到源极侧接线柱7s上时，每个Al键合带22的电极侧键合部分22a直接以超声波方式键合到半导体元件5的源电极4s上。
由于除了上述不同之处之外MOSFET 21及其制造方法与第一实施例的MOSFET 1及其制造方法相同，因此可实现本发明的目的。而且，MOSFET 21及制造MOSFET 21的方法呈现如下优点，在MOSFET 21中，如上述所述，半导体元件5的源电极4s和源极侧接线柱7s通过多个Al键合带22连接，每个Al键合带22形成为细长板状。
在MOSFET 21中，半导体元件5的源电极4s和源极侧接线柱7s由三个细长板状Al键合带22连接。与MOSFET 1相比，可减少材料(如用于Al键合带22)的Al的量，而不会降低在源电极4s和源极侧接线柱7之间流动的电流的流速。与常规MOSFET 1相比，第三实施例的MOSFET 21可以以更低的成本制造，并且电性能更高。
三个Al键合带22设置成使得它们的尺寸、形状和布局以及Al键合带22的数量不会显著降低源电极4s和源极侧接线柱7s之间的导电性。更具体地说，三个Al键合带22设置成使得三个平行布线电阻保持与上述第一实施例中的Al键合带6的布线电阻大小基本相同。
在基本上通过将第一实施例的Al键合带6分割成三个而形成的第三实施例的Al键合带22中，三个平行布线电阻的大小与具有常规Au键合的MOSFET 101的布线电阻相比减小了约80％，与Al键合带6的布线电阻的大小相同。而且在MOSFET 21中，三个Al键合带22的布线电阻对整个MOSFET 21的导通电阻的影响非常弱。
<第四实施例>
下面将参照图12介绍根据第四实施例的半导体器件及其制造方法。第四实施例将介绍MOSFET 31的结构及其制造方法。
图12中所示的MOSFET 31及其制造方法不同于第一实施例中的MOSFET 1及其制造方法之处在于半导体元件5的栅电极4g和栅极侧接线柱7g由一个细长板状Al键合带32电连接，与半导体元件5的源电极4s和源极侧接线柱7s相似。其余结构、操作和效果都与第一实施例的相同。相同的参考标记表示相同的部件，省略其说明，只介绍其不同之处。
如图12所示，在MOSFET 31中，半导体元件5的栅电极4g和栅极侧接线柱7g通过采用一个细长板状Al键合带32互相连接。Al键合带32的电极侧键合部分32a直接以超声波方式键合到半导体元件5的栅电极4g上，同时Al键合带32的接线柱侧键合部分32b直接以超声波方式键合到栅极侧接线柱7g上。
由于除了上述不同之处之外MOSFET 31及其制造方法与第一实施例的MOSFET 1及其制造方法相同，因此可实现本发明的目的。如上所述，半导体元件5的栅电极4g和栅极侧接线柱7g由一个细长板状Al键合带32连接。MOSFET 31及其制造方法具有如下优点。
在MOSFET 31中，半导体元件5的源电极4s和源极侧接线柱7s由板状Al键合带6键合。此外，半导体元件5的栅电极4g和栅极侧接线柱7g由一个细长板状Al键合带32连接。
这种结构可以提高在半导体元件5和引线框架之间流动的电流的流速。与MOSFET 1相比，MOSFET 31可进一步提高电性能。
<第五实施例>
下面参照图13介绍根据第五实施例的半导体器件及其制造方法。第五实施例将介绍MOSFET 41的结构和制造方法。
除了键合到半导体元件5的源电极4s和源极侧接线柱7s上的Al键合带42的形状不同于第一实施例中的MOSFET 1的Al键合带6的形状之外，图13中所示的MOSFET41及其制造方法具有与第一实施例相同的结构、操作和效果。与第一实施例相同的参考标记表示相同的部件，将省略其说明，并只介绍不同之处。
如图13所示，在MOSFET 41中，分别键合到半导体元件5的源电极4s和源极侧接线柱7s上的Al键合带42的电极侧键合部分42a和接线柱侧键合部分42b之间的中间部分(横梁部分)42c形成为具有预定曲率的拱形。
更具体地说，图13中所示的Al键合带42的厚度C约为0.1mm，中间部分42c的间隔D为约0.6mm。如图13的剖面图所示，中间部分42c是拱形的，以便形成平滑的半圆弧形。
在MOSFET 41的制造方法中，在形成第一实施例的Al键合带6的步骤中通过只切换用于形成键合带的模(die)，将Al板9切割成预定长度，就可以很容易形成Al键合带42，如参照图9C所述的。
而且，在Al键合带42中，电极侧键合部分42a和接线柱侧键合部分42b通过超声波键合直接键合到半导体元件5的源电极4s上和源极侧接线柱7s上。
由于除了Al键合带42是拱形的之外，MOSFET 41的结构及制造方法与第一实施例的MOSFET 1相同，因此可实现本发明的目的。如上所述，半导体元件5的源电极4s和源极侧接线柱7s通过Al键合带42连接，Al键合带42的中间部分(横梁部分)42c具有预定曲率的拱形。这提供了如下优点。
在MOSFET 41中，不会在Al键合带42的电极侧键合部分42a和半导体元件5的源电极4s的边缘部分之间产生由于芯片边缘接触等造成的电短路。因此，第五实施例可以制造具有更稳定电性能的MOSFET 41。
<第六实施例>
下面参照图14A和14B介绍根据第六实施例的半导体器件及其制造方法。第六实施例将介绍MOSFET 51的结构及其制造方法。
除了被键合到半导体元件5的源电极4s和源极侧接线柱7s上的Al键合带52的形状不同于第一实施例中的Al键合带6的之外，MOSFET 51及其制造方法具有与第一实施例相同的结构、操作和效果。与第一实施例相同的参考标记表示相同的部件，将省略其说明，并只介绍不同之处。
如图14A和14B所示，在MOSFET 51中，Al键合带52用做用于连接半导体元件5的源电极4s和源极侧接线柱7s的电流通路部件。在电极侧键合部分52a和接线柱侧键合部分52b之间的中间部分(横梁部分)52c中形成多个(图14A中为八个)孔53，孔53沿着Al键合带52的厚度方向延伸穿过中间部分52c，以便在其固化之前让具有流动性的密封树脂(外壳2的模制材料)通过。在第六实施例中，八个孔53形成为矩形形状。
在制造MOSFET 51的方法中，通过在第一实施例的形成Al键合带6的步骤中只切换用于形成带的模，可以由被切割成预定长度的Al板9很容易地形成Al键合带52，如参照图9C所述的。
在制造MOSFET 51的方法中，通过超声波键合同时将Al键合带52的电极侧键合部分52a和接线柱侧键合部分52b直接键合到半导体元件5的源电极4s上和源极侧接线柱7s上。
由于除了上述区别之外第六实施例中的MOSFET 51及其制造方法与第一实施例的MOSFET 1及其制造方法相同，因此可以实现本发明的目的。如上所述，用于允许具有流动性的密封树脂通过的八个矩形孔53如此形成，以便在连接半导体元件5的源电极4s和源极侧接线柱7s的Al键合带52的厚度方向延伸穿过中间部分52c。MOSFET 51及其制造方法展示如下优点。
根据制造第一实施例中的MOSFET 1的方法，用密封树脂(模制树脂)如环氧系列树脂将由Al键合带6键合的半导体元件、引线框架、键合线8等封装起来，以便覆盖它们。将半导体元件5、引线框架、键合线8等保存在外壳2中，以便制造被密封到SOP-8封装中的MOSFET 1。
第一实施例的Al键合带6和第六实施例的Al键合带52都由Al制成。它们对一般用做模制树脂的环氧系列树脂等的粘性很低。
当形成为板的Al键合带6如此封装以便被环氧系列树脂覆盖时，在Al键合带6和外壳2之间形成槽(slit)。可能从外壳2的外部到内部产生裂缝(crack)。
Al键合带6和外壳2之间的任何槽或裂缝都可能让潮气等从外部进入外壳2中。潮气等可能在Al键合带和半导体元件5或引线框架之间产生电短路或生锈，大大降低了MOSFET 1的电性能。在某些情况下，MOSFET 1完全不能工作。
在第六实施例的MOSFET 51中，半导体元件5的源电极4s和源极侧接线柱7s由板状Al键合带52连接。在Al键合带52的中间部分52c中形成八个矩形孔53，以便在厚度方向延伸穿过它。
当通过环氧系列树脂封装由Al键合带52键合的半导体元件5、引线框架端子3、键合线8等以便覆盖它们时，环氧系列树脂经过在Al键合带52的中间部分52c中形成的八个矩形孔53。环氧系列树脂从周边粘接Al键合带52，以便均匀地围绕它而没有任何间隙。半导体元件5、引线框架端子3、键合线8等可以被保存在外壳2中。
在这种方式下，在Al键合带52的中间部分52c中形成八个矩形孔53。这可以提高Al键合带52和MOSFET 51的外壳2中的环氧系列树脂之间的粘接性，避免潮气进入MOSFET 51的外壳2中，并大大提高了耐潮性。第六实施例可以制造具有更高的的抵抗外部环境的耐久性以及电性能的稳定性和可靠性优异的MOSFET 51。
如上所述，鉴于这种效果，可以将形成在Al键合带52的中间部分52c中的八个矩形孔53称为封装便利孔。八个矩形孔53具有的尺寸、形状、孔的数量以及布置，使得不会显著降低Al键合带52的电导性。
更具体地说，这八个矩形孔53设置成使得Al键合带52的布线电阻变得几乎等于上述第一实施例的Al键合带6的布线电阻。与Al键合带6的布线电阻相同，具有形成在第一实施例的Al键合带6的中间部分6c中的八个矩形孔53的Al键合带52中的布线电阻的大小与采用常规Au键合的MOSFET 101的布线电阻相比减小了约80％。而且在MOSFET 51中，具有八个矩形孔53的Al键合带52的布线电阻对整个MOSFET 51的导通电阻的影响非常弱。
在第六实施例的MOSFET 51中使用的键合带不是必须限于Al键合带52。例如，如图15A所示，可采用各种键合带，只要能保持带的低导通电阻值即可。
图15A中所示的Al键合带54具有沿着连接半导体元件5的源电极4s和源极侧接线柱7s的方向在中间部分54c中形成的四个槽形孔55。
图15B中所示的Al键合带56具有垂直于连接半导体元件5的源电极4s和源极侧接线柱7s的方向在中间部分56c中形成的四个槽形孔57。
图15C中所示的Al键合带58具有形成在中间部分58c中的六个小圆孔59。
图15D中所示的Al键合带60具有形成在中间部分60c中的0.8-mmφ圆孔。如图15D中的E所示，在其中心C1与Al键合带60的接线柱侧连接部分60b的端部隔开1.1mm的位置，形成圆孔61。
如图1 5E所示的Al键合带62具有形成在中间部分62c中的0.8-mmφ半圆孔63。从半圆孔63向Al键合带62的接线柱侧键合部分62b的端部形成宽度等于半圆孔63的直径的凹口0.8mm。在Al键合带62中，距离Al键合带62的接线柱侧键合部分62b的端部最远的半圆孔63的一部分形成在距离这个端部为1.5mm的位置处，如图15E中的G所示。
具有各种尺寸、形状、孔的数量和布置的孔55、57、61和63的Al键合带54、56、58、60和62的形成，使得保持上述导通电阻的大小不变。这些孔具有上述封装便利孔的效果。
根据本发明的半导体器件及其制造方法不限于第一到第六实施例。在不脱离本发明的精神和范围的情况下，根据本发明的半导体器件的结构部件或根据本发明的半导体器件制造方法的步骤可以任意组合和实施。
例如，将Al键合带的电极侧键合部分直接连接到半导体元件的源电极4s和Al键合带的接线柱侧键合部分的方法不限于超声波键合。例如，可采用电阻焊或压缩键合。
在键合操作中，代替同时将电极侧连接部分和Al键合带的接线柱侧连接部分键合到半导体元件5的源电极4s和源极侧接线柱7s上，可以首先键合它们中的任一个。除了Al之外，键合带的材料可以是高电导金属材料，如Cu或Au。
在第一到第六实施例中，根据本发明的半导体器件的半导体元件具有所谓的一层结构，其中一个源电极和一个栅电极设置在上表面上，并且一个漏电极设置在背表面上。然而，半导体元件5可采用多层结构。如果要连接到引线框架端子3的电极4暴露于半导体元件的上表面或下表面上，通过采用Al键合带6、22、32、42、52等的本发明的半导体器件制造方法可以很容易地、选择地使电极和引线框架互相电连接。
形成在半导体器件中的半导体元件的数量可以是一个或多个元件。根据本发明的半导体器件的电极不限于一个单电极型。例如，半导体器件的半导体元件可具有多个源电极、栅电极和漏电极。而且在这种情况下，通过采用Al键合带6、22、32、42、52等的本发明的半导体器件制造方法可以很容易地、选择地使这些电极和引线框架互相电连接。
形成在第六实施例中的板状Al键合带52、54、56、58、60和62中的各种孔53、55、57、59、61和63可形成在第二实施例中的三个细长板状Al键合带22的中间部分中。这些孔53、55、57、59、61和73可形成在第五实施例中的Al键合带42的拱形中间部分42c中。此时，Al键合带22和42都优选保持上述导通电阻值不变。
在根据本发明的半导体器件及其制造方法中，可以增宽电极和引线框架之间的电流通路的截面积，以便减小它们之间的电阻。此外，可避免由芯片边缘接触等造成的电短路。可以减少由于外部环境变化(如温度变化)引起的电流通路的电性能不稳定的可能性。因此，本发明可以提供能在低功耗工作和呈现稳定电性能的高度耐久的半导体器件。

Claims (20)

1、一种半导体器件，包括：
具有多个电极的半导体元件；
引线框架的多个键合部分；
板状电流通路部件，其电连接该多个电极的至少之一和所述多个键合部分之一；以及
一外壳，其将具有该多个电极的所述半导体元件、该引线框架的所述多个键合部分和所述电流通路部件封装起来，
其中，所述板状电流通路部件设置成直接键合到该多个电极之一和所述多个键合部分之一上，并且所述电流通路部件的中间部分与所述半导体元件的表面隔开。
2、根据权利要求1的器件，其中，通过超声波键合将所述电流通路部件直接键合到该多个电极之一和所述多个键合部分之一。
3、根据权利要求1的器件，其中，所述电流通路部件包括多个电流通路部件，所述多个电流通路部件直接键合到该多个电极之一和所述多个键合部分之一上。
4、根据权利要求2的器件，其中，所述电流通路部件包括多个电流通路部件，所述多个电流通路部件直接键合到该多个电极之一和所述多个键合部分之一上。
5、根据权利要求1的器件，其中，所述电流通路部件的中间部分形成为具有预定曲率的拱形。
6、根据权利要求2的器件，其中，所述电流通路部件的中间部分形成为具有预定曲率的拱形。
7、根据权利要求3的器件，其中，所述多个电流通路部件的中间部分形成为具有预定曲率的拱形。
8、根据权利要求1的器件，其中，穿过用做所述外壳的模制材料的密封树脂的孔形成在所述电流通路部件的中间部分中，以便沿着所述电流通路部件的厚度方向延伸穿过所述电流通路部件。
9、根据权利要求2的器件，其中，穿过用做所述外壳的模制材料的密封树脂的孔形成在所述电流通路部件的中间部分中，以便沿着所述电流通路部件的厚度方向延伸穿过所述电流通路部件。
10、根据权利要求3的器件，其中，穿过用做所述外壳的模制材料的密封树脂的孔形成在所述电流通路部件的中间部分中，以便沿着所述电流通路部件的厚度方向延伸穿过所述电流通路部件。
11、根据权利要求5的器件，其中，穿过用做所述外壳的模制材料的密封树脂的孔形成在所述电流通路部件的中间部分中，以便沿着所述电流通路部件的厚度方向延伸穿过所述电流通路部件。
12、根据权利要求1的器件，其中，所述电流通路部件由铝系列材料形成。
13、根据权利要求2的器件，其中，所述电流通路部件由铝系列材料形成。
14、根据权利要求3的器件，其中，所述电流通路部件由铝系列材料形成。
15、根据权利要求1的器件，其中，所述电流通路部件连接在所述半导体元件的该多个电极外的至少一个源电极和该引线框架的所述多个键合部分之一之间。
16、根据权利要求1的器件，其中，所述电流通路部件连接在所述半导体元件的该多个电极外的源电极和该引线框架的所述多个键合部分之一之间，以及栅电极和该引线框架的所述多个键合部分的另一个之间。
17、根据权利要求2的器件，其中，所述电流通路部件连接在所述半导体元件的多个电极外的源电极和该引线框架的所述多个键合部分之一之间，以及栅电极和该引线框架的所述多个键合部分的另一个之间。
18、一种制造半导体器件的方法，包括以下步骤：
形成一个半导体元件；
形成板状电流通路部件，该电流通路部件连接该半导体元件的多个电极的至少一个和引线框架的多个键合部分之一；
形成该电流通路部件，以便将该板状电流通路部件的中间部分与该半导体元件的表面隔开；和
在该多个电极的之一和该引线框架的该多个键合部分之一处，直接电连接该电流通路部件的两个端部。
19、根据权利要求18的方法，其中，通过超声波键合，将该电流通路部件的两个端部直接连接到该多个电极之一和该引线框架的该多个键合部分之一上。
20、根据权利要求18的方法，其中，通过同时超声波键合，将该电流通路部件的两个端部直接连接到该多个电极之一和该引线框架的该多个键合部分之一上。
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