CN1321333A - 晶片保持架 - Google Patents
晶片保持架 Download PDFInfo
- Publication number
- CN1321333A CN1321333A CN00801885A CN00801885A CN1321333A CN 1321333 A CN1321333 A CN 1321333A CN 00801885 A CN00801885 A CN 00801885A CN 00801885 A CN00801885 A CN 00801885A CN 1321333 A CN1321333 A CN 1321333A
- Authority
- CN
- China
- Prior art keywords
- wafer
- retainer body
- projection
- mentioned
- fork
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 57
- 230000002093 peripheral effect Effects 0.000 claims description 36
- 235000012431 wafers Nutrition 0.000 abstract description 285
- 230000007547 defect Effects 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000011295 pitch Substances 0.000 description 9
- 239000000284 extract Substances 0.000 description 7
- 230000035882 stress Effects 0.000 description 7
- 230000001815 facial effect Effects 0.000 description 5
- 238000007665 sagging Methods 0.000 description 5
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP249480/1999 | 1999-09-03 | ||
JP24948099 | 1999-09-03 | ||
JP249480/99 | 1999-09-03 | ||
JP2000160033 | 2000-05-30 | ||
JP160033/2000 | 2000-05-30 | ||
PCT/JP2000/005818 WO2001018856A1 (fr) | 1999-09-03 | 2000-08-29 | Support de tranche |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1321333A true CN1321333A (zh) | 2001-11-07 |
CN100386847C CN100386847C (zh) | 2008-05-07 |
Family
ID=26539317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008018855A Expired - Lifetime CN100386847C (zh) | 1999-09-03 | 2000-08-29 | 晶片保持架 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6474987B1 (zh) |
JP (1) | JP4061904B2 (zh) |
KR (1) | KR100427916B1 (zh) |
CN (1) | CN100386847C (zh) |
DE (1) | DE10082995B4 (zh) |
TW (1) | TW511217B (zh) |
WO (1) | WO2001018856A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101479840B (zh) * | 2006-06-30 | 2010-12-22 | Memc电子材料有限公司 | 晶片平台 |
CN102242353A (zh) * | 2010-05-14 | 2011-11-16 | 佛山市奇明光电有限公司 | 有机金属化学气相沉积机台 |
CN103386566A (zh) * | 2013-07-10 | 2013-11-13 | 中国电子科技集团公司第四十一研究所 | 介质基片激光加工夹具及其使用方法 |
CN104508813A (zh) * | 2012-07-26 | 2015-04-08 | 千住金属工业株式会社 | 半导体晶圆输送器具 |
CN105765702A (zh) * | 2013-12-03 | 2016-07-13 | 信越半导体株式会社 | 倒角加工装置及无切口晶圆的制造方法 |
CN112652532A (zh) * | 2020-12-22 | 2021-04-13 | 长江存储科技有限责任公司 | 半导体结构的形成方法 |
Families Citing this family (217)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3377996B1 (ja) * | 2001-12-27 | 2003-02-17 | 東京エレクトロン株式会社 | 熱処理用ボート及び縦型熱処理装置 |
TW200305228A (en) * | 2002-03-01 | 2003-10-16 | Hitachi Int Electric Inc | Heat treatment apparatus and a method for fabricating substrates |
US6835039B2 (en) * | 2002-03-15 | 2004-12-28 | Asm International N.V. | Method and apparatus for batch processing of wafers in a furnace |
JP3781014B2 (ja) * | 2003-03-31 | 2006-05-31 | 株式会社Sumco | シリコンウェーハ熱処理治具およびシリコンウェーハ熱処理方法 |
CN100517612C (zh) * | 2003-04-02 | 2009-07-22 | 株式会社上睦可 | 半导体晶片用热处理夹具 |
US7610783B2 (en) * | 2003-11-17 | 2009-11-03 | Telezygology Inc. | Fasteners and other assemblies |
US20070275570A1 (en) * | 2004-01-20 | 2007-11-29 | Hitachi Kokusai Electric Inc. | Heat Treatment Apparatus |
US7163393B2 (en) * | 2004-02-02 | 2007-01-16 | Sumitomo Mitsubishi Silicon Corporation | Heat treatment jig for semiconductor silicon substrate |
KR100852975B1 (ko) * | 2004-08-06 | 2008-08-19 | 가부시키가이샤 히다치 고쿠사이 덴키 | 열처리 장치 및 기판의 제조 방법 |
KR20070048649A (ko) * | 2004-09-04 | 2007-05-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 높이가 감소된 기판 캐리어 |
US7994067B2 (en) * | 2004-09-27 | 2011-08-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor manufacturing equipment with an open-topped cassette apparatus |
JP4833074B2 (ja) * | 2004-09-30 | 2011-12-07 | 株式会社日立国際電気 | 熱処理装置、熱処理方法、基板の製造方法及び半導体装置の製造方法 |
US7033168B1 (en) * | 2005-01-24 | 2006-04-25 | Memc Electronic Materials, Inc. | Semiconductor wafer boat for a vertical furnace |
WO2007061604A2 (en) * | 2005-11-21 | 2007-05-31 | Applied Materials, Inc. | Apparatus and methods for a substrate carrier having an inflatable seal |
US20070141280A1 (en) * | 2005-12-16 | 2007-06-21 | Applied Materials, Inc. | Substrate carrier having an interior lining |
JP4987580B2 (ja) * | 2007-06-12 | 2012-07-25 | コバレントマテリアル株式会社 | 縦型ウエハボート |
US8042697B2 (en) | 2008-06-30 | 2011-10-25 | Memc Electronic Materials, Inc. | Low thermal mass semiconductor wafer support |
US9224627B2 (en) * | 2011-02-16 | 2015-12-29 | Texchem Advanced Products Incorporated Sdn Bhd | Single and dual stage wafer cushion and wafer separator |
JP2012195562A (ja) * | 2011-02-28 | 2012-10-11 | Hitachi Kokusai Electric Inc | 異径基板用アタッチメントおよび基板処理装置ならびに基板若しくは半導体デバイスの製造方法 |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9099514B2 (en) * | 2012-03-21 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer holder with tapered region |
CN102764740A (zh) * | 2012-07-02 | 2012-11-07 | 江阴新顺微电子有限公司 | 适用于半导体芯片背面金属化前处理的单面泡酸工艺 |
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JPH09260296A (ja) * | 1996-03-21 | 1997-10-03 | Sumitomo Sitix Corp | ウェーハ支持装置 |
JP3469000B2 (ja) * | 1996-08-02 | 2003-11-25 | 三井造船株式会社 | 縦型ウエハ支持装置 |
KR20000002833A (ko) * | 1998-06-23 | 2000-01-15 | 윤종용 | 반도체 웨이퍼 보트 |
JP2000091406A (ja) * | 1998-09-08 | 2000-03-31 | Mitsubishi Materials Silicon Corp | ウェーハ保持具 |
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2000
- 2000-08-29 WO PCT/JP2000/005818 patent/WO2001018856A1/ja active Application Filing
- 2000-08-29 JP JP2001522581A patent/JP4061904B2/ja not_active Expired - Lifetime
- 2000-08-29 KR KR10-2001-7005496A patent/KR100427916B1/ko active IP Right Grant
- 2000-08-29 CN CNB008018855A patent/CN100386847C/zh not_active Expired - Lifetime
- 2000-08-29 US US09/831,032 patent/US6474987B1/en not_active Expired - Lifetime
- 2000-08-29 DE DE10082995T patent/DE10082995B4/de not_active Expired - Lifetime
- 2000-08-31 TW TW089117680A patent/TW511217B/zh not_active IP Right Cessation
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101479840B (zh) * | 2006-06-30 | 2010-12-22 | Memc电子材料有限公司 | 晶片平台 |
CN102242353A (zh) * | 2010-05-14 | 2011-11-16 | 佛山市奇明光电有限公司 | 有机金属化学气相沉积机台 |
CN104508813A (zh) * | 2012-07-26 | 2015-04-08 | 千住金属工业株式会社 | 半导体晶圆输送器具 |
CN103386566A (zh) * | 2013-07-10 | 2013-11-13 | 中国电子科技集团公司第四十一研究所 | 介质基片激光加工夹具及其使用方法 |
CN103386566B (zh) * | 2013-07-10 | 2015-04-01 | 中国电子科技集团公司第四十一研究所 | 介质基片激光加工夹具及其使用方法 |
CN105765702A (zh) * | 2013-12-03 | 2016-07-13 | 信越半导体株式会社 | 倒角加工装置及无切口晶圆的制造方法 |
CN105765702B (zh) * | 2013-12-03 | 2018-11-06 | 信越半导体株式会社 | 倒角加工装置及无切口晶圆的制造方法 |
CN112652532A (zh) * | 2020-12-22 | 2021-04-13 | 长江存储科技有限责任公司 | 半导体结构的形成方法 |
Also Published As
Publication number | Publication date |
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DE10082995T1 (de) | 2001-11-22 |
KR100427916B1 (ko) | 2004-04-28 |
KR20010099775A (ko) | 2001-11-09 |
DE10082995B4 (de) | 2004-09-09 |
WO2001018856A1 (fr) | 2001-03-15 |
TW511217B (en) | 2002-11-21 |
CN100386847C (zh) | 2008-05-07 |
US6474987B1 (en) | 2002-11-05 |
JP4061904B2 (ja) | 2008-03-19 |
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