CN1280321C - 光致抗蚀共聚物 - Google Patents
光致抗蚀共聚物 Download PDFInfo
- Publication number
- CN1280321C CN1280321C CNB031063527A CN03106352A CN1280321C CN 1280321 C CN1280321 C CN 1280321C CN B031063527 A CNB031063527 A CN B031063527A CN 03106352 A CN03106352 A CN 03106352A CN 1280321 C CN1280321 C CN 1280321C
- Authority
- CN
- China
- Prior art keywords
- norbornylene
- carboxylic acid
- formula
- multipolymer
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920001577 copolymer Polymers 0.000 title abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 30
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims abstract description 13
- VAYTZRYEBVHVLE-UHFFFAOYSA-N 1,3-dioxol-2-one Chemical compound O=C1OC=CO1 VAYTZRYEBVHVLE-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000002360 preparation method Methods 0.000 claims description 11
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 8
- BZBMBZJUNPMEBD-UHFFFAOYSA-N tert-butyl bicyclo[2.2.1]hept-2-ene-5-carboxylate Chemical compound C1C2C(C(=O)OC(C)(C)C)CC1C=C2 BZBMBZJUNPMEBD-UHFFFAOYSA-N 0.000 claims description 7
- 150000001336 alkenes Chemical class 0.000 claims description 5
- FYGUSUBEMUKACF-UHFFFAOYSA-N bicyclo[2.2.1]hept-2-ene-5-carboxylic acid Chemical compound C1C2C(C(=O)O)CC1C=C2 FYGUSUBEMUKACF-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000000178 monomer Substances 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 125000005574 norbornylene group Chemical group 0.000 claims description 2
- 238000007334 copolymerization reaction Methods 0.000 claims 2
- -1 carboxylic acid tert-butyl ester carboxylic acid Chemical class 0.000 claims 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 abstract 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 20
- 229920005989 resin Polymers 0.000 description 18
- 239000011347 resin Substances 0.000 description 18
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 16
- 239000002904 solvent Substances 0.000 description 14
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 10
- 230000002194 synthesizing effect Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 238000001291 vacuum drying Methods 0.000 description 4
- 230000004304 visual acuity Effects 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 125000002723 alicyclic group Chemical group 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- ZQMIGQNCOMNODD-UHFFFAOYSA-N diacetyl peroxide Chemical compound CC(=O)OOC(C)=O ZQMIGQNCOMNODD-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- YIVJZNGAASQVEM-UHFFFAOYSA-N Lauroyl peroxide Chemical compound CCCCCCCCCCCC(=O)OOC(=O)CCCCCCCCCCC YIVJZNGAASQVEM-UHFFFAOYSA-N 0.000 description 1
- PHDAADUELLBUCA-UHFFFAOYSA-N OOO.C[N+](C)(C)C Chemical compound OOO.C[N+](C)(C)C PHDAADUELLBUCA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 238000012662 bulk polymerization Methods 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001841 cholesterols Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- YBHMHVKPQRJHPN-UHFFFAOYSA-M dibutyl(naphthalen-1-yl)sulfanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=C2C([S+](CCCC)CCCC)=CC=CC2=C1 YBHMHVKPQRJHPN-UHFFFAOYSA-M 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- AIDQCFHFXWPAFG-UHFFFAOYSA-N n-formylformamide Chemical compound O=CNC=O AIDQCFHFXWPAFG-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000007870 radical polymerization initiator Substances 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229920006009 resin backbone Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- UOUFRTFWWBCVPV-UHFFFAOYSA-N tert-butyl 4-(2,4-dioxo-1H-thieno[3,2-d]pyrimidin-3-yl)piperidine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCC(CC1)n1c(=O)[nH]c2ccsc2c1=O UOUFRTFWWBCVPV-UHFFFAOYSA-N 0.000 description 1
- SWAXTRYEYUTSAP-UHFFFAOYSA-N tert-butyl ethaneperoxoate Chemical compound CC(=O)OOC(C)(C)C SWAXTRYEYUTSAP-UHFFFAOYSA-N 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
- C08F232/02—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings
- C08F232/04—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings having one carbon-to-carbon double bond
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polymerisation Methods In General (AREA)
- Polymerization Catalysts (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR9680264 | 1996-12-31 | ||
| KR19960080264 | 1996-12-31 | ||
| KR1019970026807A KR100265597B1 (ko) | 1996-12-30 | 1997-06-21 | Arf 감광막 수지 및 그 제조방법 |
| KR9726807 | 1997-06-21 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN97126153A Division CN1187495A (zh) | 1996-12-31 | 1997-12-31 | 使用氟化氩光致抗蚀剂的方法和装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1478800A CN1478800A (zh) | 2004-03-03 |
| CN1280321C true CN1280321C (zh) | 2006-10-18 |
Family
ID=26632436
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031063527A Expired - Lifetime CN1280321C (zh) | 1996-12-31 | 1997-12-31 | 光致抗蚀共聚物 |
| CN2006101596008A Expired - Lifetime CN1983029B (zh) | 1996-12-31 | 1997-12-31 | 使用氟化氩光致抗蚀剂的方法和装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006101596008A Expired - Lifetime CN1983029B (zh) | 1996-12-31 | 1997-12-31 | 使用氟化氩光致抗蚀剂的方法和装置 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6132926A (enExample) |
| JP (4) | JP3220745B2 (enExample) |
| KR (1) | KR100265597B1 (enExample) |
| CN (2) | CN1280321C (enExample) |
| DE (1) | DE19758244B4 (enExample) |
| FR (1) | FR2757868B1 (enExample) |
| GB (1) | GB2320718B (enExample) |
| IT (1) | IT1297352B1 (enExample) |
| NL (1) | NL1007939C2 (enExample) |
| TW (1) | TW388926B (enExample) |
Families Citing this family (94)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100265597B1 (ko) * | 1996-12-30 | 2000-09-15 | 김영환 | Arf 감광막 수지 및 그 제조방법 |
| US6808859B1 (en) | 1996-12-31 | 2004-10-26 | Hyundai Electronics Industries Co., Ltd. | ArF photoresist copolymers |
| KR100225956B1 (ko) * | 1997-01-10 | 1999-10-15 | 김영환 | 아민을 도입한 에이알에프 감광막 수지 |
| KR100321080B1 (ko) * | 1997-12-29 | 2002-11-22 | 주식회사 하이닉스반도체 | 공중합체수지와이의제조방법및이수지를이용한포토레지스트 |
| KR100334387B1 (ko) | 1997-12-31 | 2002-11-22 | 주식회사 하이닉스반도체 | 공중합체수지와그제조방법및이수지를이용한포토레지스트 |
| KR100520148B1 (ko) | 1997-12-31 | 2006-05-12 | 주식회사 하이닉스반도체 | 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물 |
| JPH11231541A (ja) * | 1998-02-17 | 1999-08-27 | Daicel Chem Ind Ltd | 放射線感光材料及びそれを使用したパターン形成方法 |
| WO1999042502A1 (en) * | 1998-02-23 | 1999-08-26 | The B.F. Goodrich Company | Polycyclic resist compositions with increased etch resistance |
| KR19990081722A (ko) | 1998-04-30 | 1999-11-15 | 김영환 | 카르복실기 함유 지환족 유도체 및 그의 제조방법 |
| KR100376983B1 (ko) * | 1998-04-30 | 2003-08-02 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한미세패턴의형성방법 |
| AU4826399A (en) | 1998-07-01 | 2000-01-24 | B.F. Goodrich Company, The | Polycyclic copolymer compositions |
| KR100403325B1 (ko) | 1998-07-27 | 2004-03-24 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한포토레지스트조성물 |
| KR20000014580A (ko) * | 1998-08-21 | 2000-03-15 | 김영환 | 신규한 포토레지스트 중합체 및 이를 이용한 포토레지스트 조성물 |
| KR20000015014A (ko) | 1998-08-26 | 2000-03-15 | 김영환 | 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물 |
| JP3587743B2 (ja) * | 1998-08-26 | 2004-11-10 | 株式会社ハイニックスセミコンダクター | フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。 |
| US6569971B2 (en) * | 1998-08-27 | 2003-05-27 | Hyundai Electronics Industries Co., Ltd. | Polymers for photoresist and photoresist compositions using the same |
| KR100274119B1 (ko) * | 1998-10-08 | 2001-03-02 | 박찬구 | 감방사선성 레지스트 제조용 중합체 및 이를 함유하는 레지스트조성물 |
| KR100400295B1 (ko) * | 1998-10-17 | 2004-02-14 | 주식회사 하이닉스반도체 | 신규한포토레지스트모노머,그의공중합체및이를이용한포토레지스트조성물및제조방법 |
| US6114085A (en) * | 1998-11-18 | 2000-09-05 | Clariant Finance (Bvi) Limited | Antireflective composition for a deep ultraviolet photoresist |
| KR100400293B1 (ko) * | 1998-11-27 | 2004-03-22 | 주식회사 하이닉스반도체 | 포토레지스트단량체,그의중합체및이를이용한포토레지스트조성물 |
| US6475904B2 (en) * | 1998-12-03 | 2002-11-05 | Advanced Micro Devices, Inc. | Interconnect structure with silicon containing alicyclic polymers and low-k dielectric materials and method of making same with single and dual damascene techniques |
| JP4144957B2 (ja) | 1999-01-22 | 2008-09-03 | 富士通株式会社 | レジスト組成物及びレジストパターンの形成方法 |
| KR20000056355A (ko) * | 1999-02-19 | 2000-09-15 | 김영환 | 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물 |
| KR100634973B1 (ko) | 1999-04-09 | 2006-10-16 | 센쥬긴소쿠고교가부시키가이샤 | 솔더볼 및 솔더볼의 피복방법 |
| TWI224241B (en) | 1999-04-28 | 2004-11-21 | Jsr Corp | Positive resist composition |
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| KR100220953B1 (ko) * | 1996-12-31 | 1999-10-01 | 김영환 | 아미드 또는 이미드를 도입한 ArF 감광막 수지 |
| KR100225956B1 (ko) * | 1997-01-10 | 1999-10-15 | 김영환 | 아민을 도입한 에이알에프 감광막 수지 |
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-
1997
- 1997-06-21 KR KR1019970026807A patent/KR100265597B1/ko not_active Expired - Fee Related
- 1997-12-27 JP JP36895797A patent/JP3220745B2/ja not_active Expired - Fee Related
- 1997-12-29 TW TW086119893A patent/TW388926B/zh not_active IP Right Cessation
- 1997-12-30 NL NL1007939A patent/NL1007939C2/nl not_active IP Right Cessation
- 1997-12-30 US US09/000,984 patent/US6132926A/en not_active Expired - Lifetime
- 1997-12-30 FR FR9716702A patent/FR2757868B1/fr not_active Expired - Lifetime
- 1997-12-30 DE DE19758244.3A patent/DE19758244B4/de not_active Expired - Lifetime
- 1997-12-30 GB GB9727474A patent/GB2320718B/en not_active Expired - Lifetime
- 1997-12-30 IT IT97TO001150A patent/IT1297352B1/it active IP Right Grant
- 1997-12-31 CN CNB031063527A patent/CN1280321C/zh not_active Expired - Lifetime
- 1997-12-31 CN CN2006101596008A patent/CN1983029B/zh not_active Expired - Lifetime
-
2001
- 2001-05-09 JP JP2001138754A patent/JP2002003541A/ja active Pending
- 2001-05-09 JP JP2001138884A patent/JP4025956B2/ja not_active Expired - Fee Related
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2007
- 2007-03-06 JP JP2007056463A patent/JP4999499B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002003542A (ja) | 2002-01-09 |
| JP4999499B2 (ja) | 2012-08-15 |
| US6132926A (en) | 2000-10-17 |
| JP3220745B2 (ja) | 2001-10-22 |
| GB9727474D0 (en) | 1998-02-25 |
| GB2320718B (en) | 2000-09-13 |
| FR2757868B1 (fr) | 2003-11-14 |
| CN1983029A (zh) | 2007-06-20 |
| KR19980063345A (ko) | 1998-10-07 |
| JPH10218947A (ja) | 1998-08-18 |
| NL1007939A1 (nl) | 1998-07-01 |
| DE19758244B4 (de) | 2014-08-14 |
| ITTO971150A1 (it) | 1999-06-30 |
| FR2757868A1 (fr) | 1998-07-03 |
| GB2320718A9 (en) | 1999-08-17 |
| KR100265597B1 (ko) | 2000-09-15 |
| CN1983029B (zh) | 2012-03-14 |
| JP2002003541A (ja) | 2002-01-09 |
| CN1478800A (zh) | 2004-03-03 |
| TW388926B (en) | 2000-05-01 |
| JP4025956B2 (ja) | 2007-12-26 |
| JP2007146182A (ja) | 2007-06-14 |
| IT1297352B1 (it) | 1999-09-01 |
| DE19758244A1 (de) | 1998-07-02 |
| NL1007939C2 (nl) | 1998-11-17 |
| GB2320718A (en) | 1998-07-01 |
| GB2320718A8 (en) | 1999-08-17 |
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