KR100265597B1 - Arf 감광막 수지 및 그 제조방법 - Google Patents

Arf 감광막 수지 및 그 제조방법 Download PDF

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Publication number
KR100265597B1
KR100265597B1 KR1019970026807A KR19970026807A KR100265597B1 KR 100265597 B1 KR100265597 B1 KR 100265597B1 KR 1019970026807 A KR1019970026807 A KR 1019970026807A KR 19970026807 A KR19970026807 A KR 19970026807A KR 100265597 B1 KR100265597 B1 KR 100265597B1
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KR
South Korea
Prior art keywords
formula
iii
norbornene
compound
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019970026807A
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English (en)
Korean (ko)
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KR19980063345A (ko
Inventor
정재창
복철규
백기호
Original Assignee
김영환
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김영환, 현대전자산업주식회사 filed Critical 김영환
Priority to KR1019970026807A priority Critical patent/KR100265597B1/ko
Priority to JP36895797A priority patent/JP3220745B2/ja
Priority to TW086119893A priority patent/TW388926B/zh
Priority to IT97TO001150A priority patent/IT1297352B1/it
Priority to GB9727474A priority patent/GB2320718B/en
Priority to US09/000,984 priority patent/US6132926A/en
Priority to NL1007939A priority patent/NL1007939C2/nl
Priority to FR9716702A priority patent/FR2757868B1/fr
Priority to DE19758244.3A priority patent/DE19758244B4/de
Priority to CNB031063527A priority patent/CN1280321C/zh
Priority to CN2006101596008A priority patent/CN1983029B/zh
Publication of KR19980063345A publication Critical patent/KR19980063345A/ko
Priority to US09/605,206 priority patent/US6808859B1/en
Application granted granted Critical
Publication of KR100265597B1 publication Critical patent/KR100265597B1/ko
Priority to JP2001138754A priority patent/JP2002003541A/ja
Priority to JP2001138884A priority patent/JP4025956B2/ja
Priority to US10/740,962 priority patent/US6866984B2/en
Priority to JP2007056463A priority patent/JP4999499B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/02—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings
    • C08F232/04—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings having one carbon-to-carbon double bond
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerisation Methods In General (AREA)
  • Polymerization Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
KR1019970026807A 1996-12-30 1997-06-21 Arf 감광막 수지 및 그 제조방법 Expired - Fee Related KR100265597B1 (ko)

Priority Applications (16)

Application Number Priority Date Filing Date Title
KR1019970026807A KR100265597B1 (ko) 1996-12-30 1997-06-21 Arf 감광막 수지 및 그 제조방법
JP36895797A JP3220745B2 (ja) 1996-12-31 1997-12-27 フォトレジスト用共重合体、フォトレジスト用共重合体の製造方法、フォトレジスト組成物、及びフォトレジストパターンの形成方法、および半導体装置
TW086119893A TW388926B (en) 1996-12-31 1997-12-29 Method and device using arf photoresist
GB9727474A GB2320718B (en) 1996-12-31 1997-12-30 Method and device for using ArF photoresist
US09/000,984 US6132926A (en) 1996-12-31 1997-12-30 ArF photoresist copolymers
NL1007939A NL1007939C2 (nl) 1996-12-31 1997-12-30 Werkwijze en inrichting waarin ArF fotoresist wordt gebruikt.
FR9716702A FR2757868B1 (fr) 1996-12-31 1997-12-30 Methode et dispositif utilisant un photoresist d'arf
DE19758244.3A DE19758244B4 (de) 1996-12-31 1997-12-30 Photoresist-Copolymer auf der Basis von Bicycloalkenen, Verfahren zu dessen Herstellung und dessen Verwendung
IT97TO001150A IT1297352B1 (it) 1996-12-31 1997-12-30 Metodo e dispositivo che utilizza un fotoinibitore arf.
CNB031063527A CN1280321C (zh) 1996-12-31 1997-12-31 光致抗蚀共聚物
CN2006101596008A CN1983029B (zh) 1996-12-31 1997-12-31 使用氟化氩光致抗蚀剂的方法和装置
US09/605,206 US6808859B1 (en) 1996-12-31 2000-06-27 ArF photoresist copolymers
JP2001138754A JP2002003541A (ja) 1996-12-31 2001-05-09 感光膜共重合体及び感光膜溶液
JP2001138884A JP4025956B2 (ja) 1996-12-31 2001-05-09 感光膜共重合体、感光膜共重合体の製造方法、感光膜、感光膜の製造方法、半導体装置の製造方法及び半導体装置
US10/740,962 US6866984B2 (en) 1996-12-31 2003-12-18 ArF photoresist copolymers
JP2007056463A JP4999499B2 (ja) 1996-12-31 2007-03-06 感光膜共重合体、感光膜共重合体の製造方法、感光膜、感光膜の製造方法、半導体装置の製造方法及び半導体装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1019960080264 1996-12-30
KR96-80264 1996-12-31
KR19960080264 1996-12-31
KR1019970026807A KR100265597B1 (ko) 1996-12-30 1997-06-21 Arf 감광막 수지 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR19980063345A KR19980063345A (ko) 1998-10-07
KR100265597B1 true KR100265597B1 (ko) 2000-09-15

Family

ID=26632436

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970026807A Expired - Fee Related KR100265597B1 (ko) 1996-12-30 1997-06-21 Arf 감광막 수지 및 그 제조방법

Country Status (10)

Country Link
US (1) US6132926A (enExample)
JP (4) JP3220745B2 (enExample)
KR (1) KR100265597B1 (enExample)
CN (2) CN1280321C (enExample)
DE (1) DE19758244B4 (enExample)
FR (1) FR2757868B1 (enExample)
GB (1) GB2320718B (enExample)
IT (1) IT1297352B1 (enExample)
NL (1) NL1007939C2 (enExample)
TW (1) TW388926B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100376983B1 (ko) * 1998-04-30 2003-08-02 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR100400295B1 (ko) * 1998-10-17 2004-02-14 주식회사 하이닉스반도체 신규한포토레지스트모노머,그의공중합체및이를이용한포토레지스트조성물및제조방법
KR100400293B1 (ko) * 1998-11-27 2004-03-22 주식회사 하이닉스반도체 포토레지스트단량체,그의중합체및이를이용한포토레지스트조성물
KR100504290B1 (ko) * 2001-01-12 2005-07-27 삼성전자주식회사 포토레지스트용 옥소옥사알카노노르보넨 함유 공중합체 및그를 포함하는 포토레지스트 조성물

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100265597B1 (ko) * 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
US6808859B1 (en) 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
KR100225956B1 (ko) * 1997-01-10 1999-10-15 김영환 아민을 도입한 에이알에프 감광막 수지
KR100321080B1 (ko) * 1997-12-29 2002-11-22 주식회사 하이닉스반도체 공중합체수지와이의제조방법및이수지를이용한포토레지스트
KR100334387B1 (ko) 1997-12-31 2002-11-22 주식회사 하이닉스반도체 공중합체수지와그제조방법및이수지를이용한포토레지스트
KR100520148B1 (ko) 1997-12-31 2006-05-12 주식회사 하이닉스반도체 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물
JPH11231541A (ja) * 1998-02-17 1999-08-27 Daicel Chem Ind Ltd 放射線感光材料及びそれを使用したパターン形成方法
WO1999042502A1 (en) * 1998-02-23 1999-08-26 The B.F. Goodrich Company Polycyclic resist compositions with increased etch resistance
KR19990081722A (ko) 1998-04-30 1999-11-15 김영환 카르복실기 함유 지환족 유도체 및 그의 제조방법
AU4826399A (en) 1998-07-01 2000-01-24 B.F. Goodrich Company, The Polycyclic copolymer compositions
KR100403325B1 (ko) 1998-07-27 2004-03-24 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한포토레지스트조성물
KR20000014580A (ko) * 1998-08-21 2000-03-15 김영환 신규한 포토레지스트 중합체 및 이를 이용한 포토레지스트 조성물
KR20000015014A (ko) 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
JP3587743B2 (ja) * 1998-08-26 2004-11-10 株式会社ハイニックスセミコンダクター フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。
US6569971B2 (en) * 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
KR100274119B1 (ko) * 1998-10-08 2001-03-02 박찬구 감방사선성 레지스트 제조용 중합체 및 이를 함유하는 레지스트조성물
US6114085A (en) * 1998-11-18 2000-09-05 Clariant Finance (Bvi) Limited Antireflective composition for a deep ultraviolet photoresist
US6475904B2 (en) * 1998-12-03 2002-11-05 Advanced Micro Devices, Inc. Interconnect structure with silicon containing alicyclic polymers and low-k dielectric materials and method of making same with single and dual damascene techniques
JP4144957B2 (ja) 1999-01-22 2008-09-03 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
KR20000056355A (ko) * 1999-02-19 2000-09-15 김영환 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물
KR100634973B1 (ko) 1999-04-09 2006-10-16 센쥬긴소쿠고교가부시키가이샤 솔더볼 및 솔더볼의 피복방법
TWI224241B (en) 1999-04-28 2004-11-21 Jsr Corp Positive resist composition
KR20000073149A (ko) * 1999-05-07 2000-12-05 김영환 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR100647380B1 (ko) * 1999-07-30 2006-11-17 주식회사 하이닉스반도체 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR20010011766A (ko) * 1999-07-30 2001-02-15 김영환 신규한 포토레지스트 단량체, 그의 공중합체 및 이를 이용한 포토레지스트 조성물
KR20010011773A (ko) * 1999-07-30 2001-02-15 김영환 모포린 유도체를 포함하는 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한 포토레지스트 조성물
KR20010016971A (ko) * 1999-08-06 2001-03-05 박종섭 신규한 포토레지스트 중합체 및 이를 이용한 포토레지스트 조성물
KR20010016972A (ko) * 1999-08-06 2001-03-05 박종섭 신규한 포토레지스트 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR20010016970A (ko) * 1999-08-06 2001-03-05 박종섭 신규한 포토레지스트 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR100301065B1 (ko) * 1999-08-16 2001-09-22 윤종용 백본이 환상 구조를 가지는 감광성 폴리머와 이를 포함하는 레지스트 조성물
KR100520180B1 (ko) * 1999-08-31 2005-10-10 주식회사 하이닉스반도체 포토레지스트의 노광후 지연 안정성을 확보하기 위한 첨가제
KR100557599B1 (ko) * 1999-08-31 2006-03-10 주식회사 하이닉스반도체 광조사에 의해 라디칼을 발생하는 그룹을 포함하는 포토레지스트단량체, 그의 공중합체 및 이를 이용한 포토레지스트 조성물
JP2001139669A (ja) * 1999-11-10 2001-05-22 Jsr Corp 硬化剤、熱硬化性樹脂組成物、およびその硬化物
JP4529245B2 (ja) * 1999-12-03 2010-08-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US6365322B1 (en) 1999-12-07 2002-04-02 Clariant Finance (Bvi) Limited Photoresist composition for deep UV radiation
EP1117003B1 (en) * 2000-01-17 2012-06-20 Shin-Etsu Chemical Co., Ltd. Process of preparing a chemical amplification type resist composition
US6777157B1 (en) * 2000-02-26 2004-08-17 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising same
US6277683B1 (en) * 2000-02-28 2001-08-21 Chartered Semiconductor Manufacturing Ltd. Method of forming a sidewall spacer and a salicide blocking shape, using only one silicon nitride layer
US6306554B1 (en) 2000-05-09 2001-10-23 Shipley Company, L.L.C. Polymers containing oxygen and sulfur alicyclic units and photoresist compositions comprising same
KR100583095B1 (ko) * 2000-06-30 2006-05-24 주식회사 하이닉스반도체 광산 발생제와 함께 광 라디칼 발생제(ｐｒｇ)를 포함하는포토레지스트 조성물
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
KR100546098B1 (ko) * 2000-12-27 2006-01-24 주식회사 하이닉스반도체 열산 발생제를 포함하는 포토레지스트 조성물을 이용하여포토레지스트 패턴 폭 감소 현상을 개선하는 방법
JP2005508013A (ja) * 2001-02-25 2005-03-24 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 新規ポリマーおよびそれを含むフォトレジスト組成物
US6686429B2 (en) 2001-05-11 2004-02-03 Clariant Finance (Bvi) Limited Polymer suitable for photoresist compositions
US6737215B2 (en) 2001-05-11 2004-05-18 Clariant Finance (Bvi) Ltd Photoresist composition for deep ultraviolet lithography
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
FR2832412B1 (fr) * 2001-11-19 2003-12-19 Atofina Polymere fonctionnel reticulable permettant la fabrication de materiaux conducteurs de la lumiere
FR2832411A1 (fr) * 2001-11-19 2003-05-23 Atofina Copolymere amorphe partiellement fluore permettant la fabrication de materiaux conducteurs de la lumiere
KR100440776B1 (ko) * 2001-12-17 2004-07-21 주식회사 하이닉스반도체 불화아르곤 노광원을 이용한 반도체 소자 제조 방법
US7138218B2 (en) * 2001-12-18 2006-11-21 Hynix Semiconductor Inc. Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
US6844131B2 (en) 2002-01-09 2005-01-18 Clariant Finance (Bvi) Limited Positive-working photoimageable bottom antireflective coating
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US6800416B2 (en) 2002-01-09 2004-10-05 Clariant Finance (Bvi) Ltd. Negative deep ultraviolet photoresist
US20030235775A1 (en) 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
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KR100400293B1 (ko) * 1998-11-27 2004-03-22 주식회사 하이닉스반도체 포토레지스트단량체,그의중합체및이를이용한포토레지스트조성물
KR100504290B1 (ko) * 2001-01-12 2005-07-27 삼성전자주식회사 포토레지스트용 옥소옥사알카노노르보넨 함유 공중합체 및그를 포함하는 포토레지스트 조성물

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GB9727474D0 (en) 1998-02-25
GB2320718B (en) 2000-09-13
FR2757868B1 (fr) 2003-11-14
CN1983029A (zh) 2007-06-20
KR19980063345A (ko) 1998-10-07
JPH10218947A (ja) 1998-08-18
NL1007939A1 (nl) 1998-07-01
DE19758244B4 (de) 2014-08-14
ITTO971150A1 (it) 1999-06-30
FR2757868A1 (fr) 1998-07-03
GB2320718A9 (en) 1999-08-17
CN1983029B (zh) 2012-03-14
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JP2002003541A (ja) 2002-01-09
CN1478800A (zh) 2004-03-03
TW388926B (en) 2000-05-01
JP4025956B2 (ja) 2007-12-26
JP2007146182A (ja) 2007-06-14
IT1297352B1 (it) 1999-09-01
DE19758244A1 (de) 1998-07-02
NL1007939C2 (nl) 1998-11-17
GB2320718A (en) 1998-07-01
GB2320718A8 (en) 1999-08-17

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