CN1238344A - 聚合物和使用该聚合物形成显微图形的方法 - Google Patents

聚合物和使用该聚合物形成显微图形的方法 Download PDF

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CN1238344A
CN1238344A CN99106401A CN99106401A CN1238344A CN 1238344 A CN1238344 A CN 1238344A CN 99106401 A CN99106401 A CN 99106401A CN 99106401 A CN99106401 A CN 99106401A CN 1238344 A CN1238344 A CN 1238344A
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郑载昌
卢致亨
卜喆圭
金明洙
李根守
白基镐
金亨基
郑旼镐
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Abstract

本发明涉及右式1所示的聚合物和采用该聚合物形成显微图形的方法,其中，R1为C0－C10直链或支链取代烷基或苄基;R2为C1－C10伯醇、仲醇或叔醇基;m和n相互独立地代表1—3的数;以及X、Y和Z分别是共聚单体的聚合比。本发明的光致抗蚀剂聚合物适于利用ArF、E－射线、EUV或离子射线等光源来形成4G或16G半导体器件所用的超显微图形。

Description

聚合物和使用该聚合物形成显微图形的方法
本发明涉及可在制备半导体器件的平版印刷中用作光致抗蚀剂的聚合物和使用该聚合物形成显微图形的方法。具体地讲，本发明涉及可用于形成超显微图形的光致抗蚀剂组合物中的聚合物，所述的超显微图形是使用短波光源如KrF(248nm)、ArF(193nm)、E-射线或离子射线在制备4G和16G DRAM半导体芯片时形成的。本发明的聚合物特别适用于制备利用甲硅烷基化作用进行顶表面图象(TSI)处理的光致抗蚀剂组合物，或可用于制备单层光致抗蚀剂。
在制造半导体元件的过程中，光致抗蚀剂通常以固定的形式用于在半导体元件上形成图形。为了得到所需的光致抗蚀剂图形，将光致抗蚀剂溶液涂敷在半导体晶片的表面上，将该被涂敷的光致抗蚀剂以一定的图形曝光，然后对晶片进行显影。结果，在晶片上形成了光致抗蚀剂图形。
如果光致抗蚀剂图形是采用常规的甲硅烷基化方法制造的，该光致抗蚀剂通常是由重氮萘酚醌化合物和酚醛清漆树脂或由光酸(photoacid)产生剂和聚乙烯苯酚树脂组成的。当光致抗蚀剂树脂在用以形成图形的光源(如ArF、KrF或离子射线)下曝光然后烘烤时，在曝光区域的树脂中有醇基(R-O-H)形成。在烘烤后，用甲硅烷基化试剂如六甲基二硅氮烷(hexamethyldisilazane)或四甲基二硅氮烷将光致抗蚀剂甲硅烷基化。在甲硅烷基化过程中，N-Si键首先形成，但因该N-Si键薄弱，接着它与光致抗蚀剂聚合物中的R-O-H基团反应形成R-O-Si键。然后采用O2等离子体使带有键合硅原子的该光致抗蚀剂树脂进行干法显影，形成氧化硅膜。氧化硅膜的较低层部分即使在该光致抗蚀剂显影之后也仍然存在，其结果是，所需的图形得以形成。
当与较短波长放射源一起使用时，上面描述的用于形成光致抗蚀剂图形的甲硅烷基化方法有几个缺陷。具体地讲，当采用KrF分步重复曝光器作为光源对已知的光致抗蚀剂聚合物进行曝光时，采用甲硅烷基化方法不可能形成小于0.10微米L/S的超显微图形。当使用KrF光源时，由于KrF光的能量很高，曝光器的镜头可被损坏。因此，必须用较低能量的光源例如小于10mJ/cm2的光源对光致抗蚀剂曝光。如果光致抗蚀剂没有被这种低能量的光充分曝光的话，则不能形成所需的图形。
已经发现本发明的独特的光致抗蚀剂聚合物可解决现有技术中的上述问题。本发明聚合物的耐热特征使曝光后的烘烤和TSI处理中的甲硅烷基化步骤可在所需的高温下进行。本发明的聚合物特别适用于在化学放大的光致抗蚀剂中使用，其中即使采用少量的能量(例如10mJ/cm2)也能对光致抗蚀剂图形进行分辨，由此，可防止曝光器镜头的损坏并防止光致抗蚀剂图形的模糊或分辨率不够，后者是使用ArF(193nm)光源的现有技术在形成显微图形的过程中遇到的。另外，本发明的聚合物可有利地用于采用化学放大的光致抗蚀剂和O2等离子体来形成氧化硅膜的甲硅烷基化过程，由此促进蚀刻并提高光致抗蚀剂的耐热性，使得采用干法显影方法也能形成可接受的显微图形。
在一个实施方案中，本发明涉及适于用作单层光致抗蚀剂的聚合物，优选用作TSI处理中的光致抗蚀剂的聚合物。优选的本发明聚合物如下式1所示：[式1]
其中，R1为C0-C10直链或支链烷基或苄基；R2为C1-C10伯醇、仲醇或叔醇基；m和n相互独立地代表1-3的数；以及X、Y和Z分别是共聚单体的聚合比；X∶Y∶Z之比为(10-80mol％)∶(10-80mol％)∶(10-80mol％)。
本发明的另一实施方案涉及上式1所示的聚合物的制备方法。
在再一实施方案中，本发明涉及含有上式1所示的聚合物、溶剂和光酸产生剂的光致抗蚀剂组合物。
在又一实施方案中，本发明涉及采用上述的光致抗蚀剂组合物形成显微图形的方法。
图1a-1f是显示用于形成光致抗蚀剂图形的过程的横截面示意图。
图2-4是按本文描述的实施例制备的本发明聚合物(如式5、6和8所示)的NMR波谱。
图5-12是显示由48mJ/cm2的曝光能所形成图形的外观的横截面示图。
图13-20是显示由所指明的不同曝光能形成的图形外观的横截面示图。
本发明涉及下式1所示的聚合物，该聚合物可用作单层光致抗蚀剂或在TSI处理中使用的光致抗蚀剂。
[式1]
Figure A9910640100091
其中，R1为C0-C10直链或支链取代烷基或苄基；R2为C1-C10伯醇、仲醇或叔醇基；m和n相互独立地代表1-3的数；以及X、Y和Z分别是共聚单体的聚合比。
上式1所示的聚合物可按照本发明如下制备，即，在聚合引发剂存在下使以下三种单体聚合：
ⅰ)N-烷基马来酰亚胺(如下式2所示)
[式2]
Figure A9910640100101
ⅱ)如下式3所示的化合物
[式3]
ⅲ)如下式4所示的化合物
[式4]
其中，R1为C0-C10直链或支链取代烷基或苄基；R2为C1-C10伯醇、仲醇或叔醇基；m和n相互独立地代表1-3的数。
优选的式2所示N-烷基马来酰亚胺化合物是N-甲基马来酰亚胺、N-乙基马来酰亚胺、N-丙基马来酰亚胺、N-异丙基马来酰亚胺、N-正丁基马来酰亚胺、N-异丁基马来酰亚胺、N-叔丁基马来酰亚胺、N-戊基马来酰亚胺等，其中N-乙基马来酰亚胺、N-丙基马来酰亚胺或N-叔丁基马来酰亚胺是最为优选的。
优选的式3所示的化合物是5-降冰片烯-2-羧酸叔丁酯和双环[2,2,2]辛-5-烯-2-羧酸叔丁酯。
优选的式4所示的化合物是那些其中的R2为甲醇基、乙醇基、丙醇基、丁醇基或戊醇基的化合物。最优选的式4所示的化合物是5-降冰片烯-2-羧酸(2-羟)乙酯、5-降冰片烯-2-羧酸(3-羟)丙酯、双环[2,2,2]辛-5-烯-2-羧酸(2-羟)乙酯或双环[2,2,2]辛-5-烯-2-羧酸(3-羟)丙酯。
根据本发明的优选实施方案，式2、式3和式4所示的化合物以(1-2)∶(0.5-1.5)∶(0.5-1.5)的摩尔比进行反应。
可采用常规聚合方法如本体聚合或溶液聚合来制备本发明的聚合物。可将过氧化苯甲酰、2,2′-偶氮双异丁腈(AIBN)、过氧化乙酰、过氧化月桂酰或过氧化叔丁酰用作聚合引发剂。可使用四氢呋喃(THF)、环己烷、甲基乙基酮、苯、甲苯、二噁恶烷或二甲基甲酰胺作为聚合反应的溶剂。该聚合反应一般在60-75℃的温度下在氮气或氩气氛下进行4-24小时。聚合条件并不限于所述的这些条件。
按照上述聚合方法所制备的如式1所示的聚合物可用作在制造半导体元件时形成显微图形的光致抗蚀剂。根据本发明，通过将式1所示的聚合物、溶剂和光酸产生剂以常规方式混合可制备光致抗蚀剂组合物。优选的光酸产生剂是硫盐或鎓盐，它们选自六氟磷酸二苯碘、六氟砷酸二苯碘、六氟锑酸二苯碘、二苯基对甲氧基苯基三氟甲磺酸酯、二苯基对甲苯基三氟甲磺酸酯、二苯基对异丁基苯基三氟甲磺酸酯、二苯基对叔丁基苯基三氟甲磺酸酯、六氟磷酸三苯基硫、六氟砷酸三苯基硫、六氟锑酸三苯基硫、三苯基硫三氟甲磺酸酯、二丁基萘基硫三氟甲磺酸酯。光酸产生剂的用量相当于在该聚合过程中所用光致抗蚀剂聚合物量的约1-20％(重量)。在光酸产生剂的量在1wt％以下时，光致抗蚀剂组合物的敏感性不够，而其量超过20wt％时，蚀刻阻抗性又不足。组合物中所用的溶剂可为常规溶剂如3-甲氧基丙酸甲酯、乳酸乙酯、3-乙氧基丙酸乙酯、丙二醇甲基醚乙酸酯。溶剂的用量相当于在该过程中所用聚合物量的约100-700wt％。优选使光致抗蚀剂组合物形成厚度为0.3-3μm的薄层。
本发明还包括采用上述的光致抗蚀剂组合物在TSI处理中形成显微图形的方法。如图1a-1f所示，在该处理中通常使涂敷在蚀刻层(3)上半部分的光致抗蚀剂组合物层(2)以本领域已知的方法首先硬化(软烘烤)，所述蚀刻层(3)位于晶片(10)的表面上。使用掩模(1)在已便化的光致抗蚀剂层(2)上形成曝光区(12)，并使光致抗蚀剂再次硬化(后烘烤)。然后，将甲硅烷基化试剂喷涂在元件上，以在所述的曝光区形成甲硅烷基化膜(14)。随后利用O2等离子体通过干法显影对甲硅烷基化膜(14)进行显影，形成氧化硅膜(16)。接着采用氧化硅膜(16)做蚀刻掩模对蚀刻层(3)进行蚀刻，在蚀刻层(3)上形成图形。
参照下文的实施例可获得对本发明的更深理解，这些实施例是用于说明本发明而不对本发明构成限制。制备实施例1
聚(N-乙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(2-羟)乙酯)聚合物的合成
[式5]
将N-乙基马来酰亚胺(1mol)、5-降冰片烯-2-羧酸叔丁酯(0.5mol)和5-降冰片烯-2-羧酸(2-羟)乙酯(0.5mol)溶解于50-300克四氢呋喃(THF)中，然后向其中加入2-15克2,2′-偶氮双异丁腈(AIBN)，使所得的溶液在氮气氛中在60-70℃间的温度下反应10小时。在该反应得到了高分子量之后，用乙醚或己烷溶剂沉淀所得产物。将收集到的沉淀干燥，得到所需的聚(N-乙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(2-羟)乙酯)聚合物，产率为约85％。该聚合物的NMR波谱如图2所示。制备实施例2
聚(N-丙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(3-羟)丙酯)聚合物的合成[式6]
Figure A9910640100131
将N-丙基马来酰亚胺(1mol)、5-降冰片烯-2-羧酸叔丁酯(0.5mol)和5-降冰片烯-2-羧酸(3-羟)丙酯(0.5mol)溶解于50-300克四氢呋喃(THF)中，然后向其中加入2-15克2,2′-偶氮双异丁腈(AIBN)，使所得的溶液在氮气氛中在60-70℃间的温度下反应10小时。在该反应得到了高分子量之后，用乙醚或己烷溶剂沉淀所得产物。将收集到的沉淀干燥，得到所需的聚(N-丙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(3-羟)丙酯)聚合物，产率为约82％。该聚合物的NMR波谱如图3所示。制备实施例3
聚(N-叔丁基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(2-羟)乙酯)聚合物的合成[式7]
Figure A9910640100141
将N-叔丁基马来酰亚胺(1mol)、双环[2,2,2]辛-5-烯-2-羧酸叔丁酯(0.5mol)和5-降冰片烯-2-羧酸(2-羟)乙酯(0.5mol)溶解于50-300克四氢呋喃(THF)中，然后向其中加入2-15克2,2′-偶氮双异丁腈(AIBN)，使所得的溶液在氮气氛中在60-70℃间的温度下反应10小时。在该反应得到了高分子量之后，用乙醚或己烷溶剂沉淀所得产物。将收集到的沉淀干燥，得到所需的聚(N-叔丁基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(2-羟)乙酯)聚合物，产率为约75％。制备实施例4
聚(N-乙基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(3-羟)丙酯)聚合物的合成[式8]
将N-乙基马来酰亚胺(1mol)、双环[2,2,2]辛-5-烯-2-羧酸叔丁酯(0.5mol)和5-降冰片烯-2-羧酸(3-羟)丙酯(0.5mol)溶解于50-300克四氢呋喃(THF)中，然后向其中加入2-15克2,2′-偶氮双异丁腈(AIBN)，使所得的溶液在氮气氛中在60-70℃间的温度下反应10小时。在该反应得到了高分子量之后，用乙醚或己烷溶剂沉淀所得产物。将收集到的沉淀干燥，得到所需的聚(N-乙基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(3-羟)丙酯)聚合物，产率为约83％。该聚合物的NMR波谱如图4所示。制备实施例5
聚(N-丙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(2-羟)乙酯)聚合物的合成
[式9]
Figure A9910640100151
将N-丙基马来酰亚胺(1mol)、5-降冰片烯-2-羧酸叔丁酯(0.5mol)和双环[2,2,2]辛-5-烯-2-羧酸(2-羟)乙酯(0.5mol)溶解于50-300克四氢呋喃(THF)中，然后向其中加入2-15克2,2′-偶氮双异丁腈(AIBN)，使所得的溶液在氮气氛中在60-70℃间的温度下反应10小时。在该反应得到了高分子量之后，用乙醚或己烷溶剂沉淀所得产物。将收集到的沉淀干燥，得到所需的聚(N-丙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(2-羟)乙酯)聚合物，产率为约79％。制备实施例6
聚(N-乙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(3-羟)丙酯)聚合物的合成
[式10]
将N-乙基马来酰亚胺(1mol)、5-降冰片烯-2-羧酸叔丁酯(0.5mol)和双环[2,2,2]辛-5-烯-2-羧酸(3-羟)丙酯(0.5mol)溶解于50-300克四氢呋喃(THF)中，然后向其中加入2-15克2,2′-偶氮双异丁腈(AIBN)，使所得的溶液在氮气氛中在60-70℃间的温度下反应10小时。在该反应得到了高分子量之后，用乙醚或己烷溶剂沉淀所得产物。将收集到的沉淀干燥，得到约所需的聚(N-乙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(3-羟)丙酯)聚合物，产率为约78％。制备实施例7
聚(N-丙基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(2-羟)乙酯)聚合物的合成[式11]
Figure A9910640100161
将N-丙基马来酰亚胺(1mol)、双环[2,2,2]辛-5-烯-2-羧酸叔丁酯(0.5mol)和双环[2,2,2]辛-5-烯-2-羧酸(2-羟)乙酯(0.5mol)溶解于50-300克四氢呋喃(THF)中，然后向其中加入2-15克2,2′-偶氮双异丁腈(AIBN)，使所得的溶液在氮气氛中在60-70℃间的温度下反应10小时。在该反应得到了高分子量之后，用乙醚或己烷溶剂沉淀所得产物。将收集到的沉淀干燥，得到所需的聚(N-丙基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(2-羟)乙酯)聚合物，产率为约78％。制备实施例8
聚(N-乙基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(3-羟)丙酯)聚合物的合成[式12]
Figure A9910640100171
将N-乙基马来酰亚胺(1mol)、双环[2,2,2]辛-5-烯-2-羧酸叔丁酯(0.5mol)和双环[2,2,2]辛-5-烯-2-羧酸(3-羟)丙酯(0.5mol)溶解于50-300克四氢呋喃(THF)中，然后向其中加入2-15克2,2′-偶氮双异丁腈(AIBN)，使所得的溶液在氮气氛中在60-70℃间的温度下反应10小时。在该反应得到了高分子量之后，用乙醚或己烷溶剂沉淀所得产物。将收集到的沉淀干燥，得到所需的聚(N-乙基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(3-羟)丙酯)聚合物，产率为约75％。
实施例1
光致抗蚀剂组合物的制备以及图形的形成
将10克按制备实施例1所制备的聚(N-乙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(2-羟)乙酯)聚合物溶解于作为溶剂的10克3-甲氧基丙酸甲酯中，并向其中加入0.1-2克三氟甲磺酸三苯基硫或三氟甲磺酸二丁基萘基硫。然后使所得的溶液过滤通过0.10μm的过滤器，以制备涂敷在晶片表面上的光致抗蚀剂组合物。然后按图1所示的方法形成所需的光致抗蚀剂图形。
实施例2
光致抗蚀剂组合物的制备和图形的形成
按照上文实施例1的方法，采用按制备实施例2所制得的10克聚(N-丙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(3-羟)丙酯)聚合物，获得光致抗蚀剂图形。
实施例3
光致抗蚀剂组合物的制备和图形的形成
按照上文实施例1的方法，采用按制备实施例3所制得的10克聚(N-叔丁基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(2-羟)乙酯)聚合物，获得光致抗蚀剂图形。
实施例4
光致抗蚀剂组合物的制备和图形的形成
按照上文实施例1的方法，采用按制备实施例4所制得的10克聚(N-乙基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(3-羟)丙酯)聚合物，获得光致抗蚀剂图形。
实施例5
光致抗蚀剂组合物的制备和图形的形成
按照上文实施例1的方法，采用按制备实施例5所制得的10克聚(N-丙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(2-羟)乙酯)聚合物，获得光致抗蚀剂图形。
实施例6
光致抗蚀剂组合物的制备和图形的形成
按照上文实施例1的方法，采用按制备实施例6所制得的10克聚(N-乙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(3-羟)丙酯)聚合物，获得光致抗蚀剂图形。
实施例7
光致抗蚀剂组合物的制备和图形的形成
按照上文实施例1的方法，采用按制备实施例7所制得的10克聚(N-丙基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(2-羟)乙酯)聚合物，获得了光致抗蚀剂图形。
实施例8
光致抗蚀剂组合物的制备和图形的形成
按照上文实施例1的方法，采用按制备实施例8所制得的10克聚(N-乙基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(3-羟)丙酯)聚合物，获得光致抗蚀剂图形。
用实施例1制得的光致抗蚀剂，通过以48mJ/cm2能量曝光形成了图5-12所示的图形；以所表明的不同水平的能量曝光则形成了图13-20所示的图形。
如上所述，本发明提供了ArF光致抗蚀剂，它具有足以耐受在TSI处理过程中在高温下进行的后烘烤(post-baking)和甲硅烷基化作用的耐热性。通过使用10mJ/cm2的低能量可分辨使用本发明化学放大的光致抗蚀剂的图形，因此可避免当使用ArF光源时，对曝光器镜头的损坏。当在甲硅烷基化过程中对本发明的聚合物使用O2等离子体时，有氧化硅膜形成，因而增加了本发明光致抗蚀剂的蚀刻阻抗性和耐热性。因此，通过干法显影可形成显微图形，并且通过采用包含本发明聚合物的光致抗蚀剂可制备高度集成化的半导体元件。
在阅读了本文所公开的内容后，此处公开的本发明的其它特征如其它益处和实施方案对本领域的普通技术人员而言是显而易见的。关于这一点，虽然已对本发明的具体实施方案做了相当详细的描述，在不背离如权利要求所述的本发明精神和范围的前提下，可对本发明的实施方案进行各种变化和修改。

Claims (20)

1．一种如下式1所示的光致抗蚀剂聚合物，[式1]
其中，R1为C0-C10直链或支链取代烷基或苄基；R2为C1-C10伯醇、仲醇或叔醇基；m和n相互独立地代表1-3的数；以及X、Y和Z分别是相映共聚单体的聚合比。
2．如权利要求1所述的光致抗蚀剂聚合物，其中X∶Y∶Z之比为(10-80摩尔％)∶(10-80摩尔％)∶(10-80摩尔％)。
3．如权利要求1所述的光致抗蚀剂聚合物，其中该光致抗蚀剂合物选自：
聚(N-乙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(2-羟)乙酯)；
聚(N-丙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(3-羟)丙酯)；
聚(N-叔丁基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(2-羟)乙酯)；
聚(N-乙基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/5-降冰片烯-2-羧酸(3-羟)丙酯)；
聚(N-丙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(2-羟)乙酯)；
聚(N-乙基马来酰亚胺/5-降冰片烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(3-羟)丙酯)；
聚(N-丙基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(2-羟)乙酯)；和
聚(N-乙基马来酰亚胺/双环[2,2,2]辛-5-烯-2-羧酸叔丁酯/双环[2,2,2]辛-5-烯-2-羧酸(3-羟)丙酯)。
4．制备光致抗蚀剂聚合物的方法，该方法包括如下步骤：
a)将式2所示的化合物
[式2]
式3所示的化合物
[式3]
Figure A9910640100032
和式4所示的化合物
[式4]
Figure A9910640100033
溶解于有机聚合溶剂中，
其中，R1为C0-C10直链或支链取代烷基或苄基；R2为C1-C10伯醇、仲醇或叔醇基；m和n相互独立地代表1-3的数；
b)向所得的溶液中加入聚合引发剂以形成沉淀；和
c)收集并干燥所得沉淀。
5．如权利要求4所述的制备光致抗蚀剂聚合物的方法，其中所述的聚合物引发剂为过氧化苯甲酰、2,2′-偶氮双异丁腈、过氧化乙酰、过氧化月桂酰或乙酸叔丁酯。
6．如权利要求4所述的制备光致抗蚀剂聚合物的方法，其中所述的聚合有机溶剂为四氢呋喃、环己烷、甲基乙基酮、苯、甲苯、二噁恶烷、二甲基甲酰胺或其混合物。
7．如权利要求4所述的制备光致抗蚀剂聚合物的方法，其中将步骤(b)得到的溶液在60-70℃间的温度下在氮气或氩气氛下保持4-24小时。
8．一种光致抗蚀剂组合物，包含
(ⅰ)式1所示的光致抗蚀剂聚合物[式1]
Figure A9910640100041
其中，R1为C0-C10直链或支链取代烷基或苄基；R2为C1-C10伯醇、伸醇或叔醇基；m和n相互独立地代表1-3的数；以及X、Y和Z分别是相映共聚单体的聚合比；
(ⅱ)光酸产生剂；和
(ⅲ)有机溶剂。
9．如权利要求8所述的光致抗蚀剂组合物，其中所述的光酸产生剂为硫盐或鎓盐。
10．如权利要求8所述的光致抗蚀剂组合物，其中所述的光酸产生剂选自六氟磷酸二苯碘、六氟砷酸二苯碘、六氟锑酸二苯碘、二苯基对甲氧基苯基三氟甲磺酸酯、二苯基对甲苯基三氟甲磺酸酯、二苯基对异丁基苯基三氟甲磺酸酯、二苯基对叔丁基苯基三氟甲磺酸酯、六氟磷酸三苯基硫、六氟砷酸三苯基硫、六氟锑酸三苯基硫、三氟甲磺酸三苯基硫和三氟甲磺酸二丁基萘基硫。
11．如权利要求8所述的光致抗蚀剂组合物，其中所述的有机溶剂为3-乙氧基丙酸乙酯、乳酸乙酯、3-甲氧基丙酸甲酯、丙二醇甲基醚乙酸酯或其混合物。
12．如权利要求8所述的光致抗蚀剂组合物，其中光酸产生剂的含量以所用光致抗蚀剂聚合物的量计为1-20wt％。
13．如权利要求8所述的光致抗蚀剂组合物，其中有机溶剂的含量以所用光致抗蚀剂聚合物的量计为100-700wt％。
14．形成光致抗蚀剂图形的方法，包括如下步骤：
a)制备一种光致抗蚀剂组合物，该组合物含有
(ⅰ)式1所示的光致抗蚀剂聚合物[式1]
Figure A9910640100051
其中，R1为C0-C10直链或支链取代烷基或苄基；R2为C1-C10伯醇、仲醇或叔醇基；m和n相互独立地代表1-3的数；以及X、Y和Z分别是相映共聚单体的聚合比；
(ⅱ)光酸产生剂；和
(ⅲ)有机溶剂；
b)将该光致抗蚀剂组合物涂敷在其表面上已涂有蚀刻层的基底上；
c)采用曝光器使所述的光致抗蚀剂层对光源曝光；
d)将甲硅烷基化试剂喷涂在已曝光的光致抗蚀剂层上；
e)对已甲硅烷基化的光致抗蚀剂层进行干法蚀刻。
15．如权利要求14所述的形成光致抗蚀剂图形的方法，该方法还包括在(c)步骤之前和/或之后的烘烤步骤，其中该烘烤步骤在90-180℃间的温度下进行30-300秒。
16．如权利要求14所述的形成光致抗蚀剂图形的方法，其中利用ArF、EUV、E-射线、离子射线或X-射线光源来完成所述的(c)步骤。
17．如权利要求15所述的形成光致抗蚀剂图形的方法，其中利用1-50mJ/cm2的辐射能来完成所述的(c)步骤。
18．如权利要求14所述的形成光致抗蚀剂图形的方法，其中所述的甲硅烷基化试剂选自：六甲基二硅氮烷、四甲基二硅氮烷、二甲基氨基甲基甲硅烷、二甲基氨基甲基甲硅烷、二甲基甲硅烷基二甲基胺、三甲基甲硅烷基二甲基胺、三甲基甲硅烷基二乙基胺和二甲基氨基五甲基硅烷。
19．如权利要求14所述的形成光致抗蚀剂图形的方法，其中所述的(d)步骤在90-180℃下进行30-300秒。
20．使用权利要求8所定义的光致抗蚀剂组合物的半导体元件。
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