CN1245471C - 氧化铈研磨剂以及基板的研磨方法 - Google Patents
氧化铈研磨剂以及基板的研磨方法 Download PDFInfo
- Publication number
- CN1245471C CN1245471C CNB03119818XA CN03119818A CN1245471C CN 1245471 C CN1245471 C CN 1245471C CN B03119818X A CNB03119818X A CN B03119818XA CN 03119818 A CN03119818 A CN 03119818A CN 1245471 C CN1245471 C CN 1245471C
- Authority
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- China
- Prior art keywords
- cerium oxide
- particle
- slurry
- nanometers
- grinding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
Abstract
Description
Claims (7)
Applications Claiming Priority (33)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP258775/1996 | 1996-09-30 | ||
JP25877596 | 1996-09-30 | ||
JP258781/1996 | 1996-09-30 | ||
JP25877496 | 1996-09-30 | ||
JP258774/1996 | 1996-09-30 | ||
JP258774/96 | 1996-09-30 | ||
JP258767/1996 | 1996-09-30 | ||
JP258770/1996 | 1996-09-30 | ||
JP259138/96 | 1996-09-30 | ||
JP258776/1996 | 1996-09-30 | ||
JP8258768A JPH10102039A (ja) | 1996-09-30 | 1996-09-30 | 酸化セリウム研磨剤及び基板の研磨法 |
JP25877696 | 1996-09-30 | ||
JP25878196A JPH10106993A (ja) | 1996-09-30 | 1996-09-30 | 基板の研磨法 |
JP258781/96 | 1996-09-30 | ||
JP259138/1996 | 1996-09-30 | ||
JP258766/1996 | 1996-09-30 | ||
JP258770/96 | 1996-09-30 | ||
JP8258767A JPH10102038A (ja) | 1996-09-30 | 1996-09-30 | 酸化セリウム研磨剤及び基板の研磨法 |
JP25877096 | 1996-09-30 | ||
JP258775/96 | 1996-09-30 | ||
JP08258766 | 1996-09-30 | ||
JP258768/96 | 1996-09-30 | ||
JP258766/96 | 1996-09-30 | ||
JP258776/96 | 1996-09-30 | ||
JP258767/96 | 1996-09-30 | ||
JP25913896A JPH10106982A (ja) | 1996-09-30 | 1996-09-30 | 研磨方法 |
JP258768/1996 | 1996-09-30 | ||
JP1437197A JPH10154672A (ja) | 1996-09-30 | 1997-01-28 | 酸化セリウム研磨剤及び基板の研磨法 |
JP014371/1997 | 1997-01-28 | ||
JP112396/1997 | 1997-04-30 | ||
JP11239697A JPH10298538A (ja) | 1997-04-30 | 1997-04-30 | 酸化セリウム研磨剤及び基板の研磨法 |
JP207866/1997 | 1997-08-01 | ||
JP20786697A JPH10154673A (ja) | 1996-09-30 | 1997-08-01 | 酸化セリウム研磨剤及び基板の研磨法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB97199370XA Division CN1282226C (zh) | 1996-09-30 | 1997-09-30 | 氧化铈研磨剂以及基板的研磨方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1524917A CN1524917A (zh) | 2004-09-01 |
CN1245471C true CN1245471C (zh) | 2006-03-15 |
Family
ID=27583174
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB03119818XA Expired - Lifetime CN1245471C (zh) | 1996-09-30 | 1997-09-30 | 氧化铈研磨剂以及基板的研磨方法 |
CNB031198198A Expired - Fee Related CN1323124C (zh) | 1996-09-30 | 1997-09-30 | 氧化铈研磨剂以及基板的研磨方法 |
CNB97199370XA Expired - Lifetime CN1282226C (zh) | 1996-09-30 | 1997-09-30 | 氧化铈研磨剂以及基板的研磨方法 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031198198A Expired - Fee Related CN1323124C (zh) | 1996-09-30 | 1997-09-30 | 氧化铈研磨剂以及基板的研磨方法 |
CNB97199370XA Expired - Lifetime CN1282226C (zh) | 1996-09-30 | 1997-09-30 | 氧化铈研磨剂以及基板的研磨方法 |
Country Status (8)
Country | Link |
---|---|
US (5) | US6221118B1 (zh) |
EP (4) | EP1610367B1 (zh) |
KR (4) | KR100775228B1 (zh) |
CN (3) | CN1245471C (zh) |
AU (1) | AU4323197A (zh) |
CA (1) | CA2263241C (zh) |
RU (1) | RU2178599C2 (zh) |
WO (1) | WO1998014987A1 (zh) |
Families Citing this family (119)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1245471C (zh) * | 1996-09-30 | 2006-03-15 | 日立化成工业株式会社 | 氧化铈研磨剂以及基板的研磨方法 |
TW365563B (en) * | 1997-04-28 | 1999-08-01 | Seimi Chem Kk | Polishing agent for semiconductor and method for its production |
JPH11181403A (ja) | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
US6533832B2 (en) * | 1998-06-26 | 2003-03-18 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry and method for using same |
CN1293148C (zh) * | 1998-11-13 | 2007-01-03 | 三井化学株式会社 | 具有优异分散稳定性的有机聚合物/无机细粒-分散水溶液及其应用 |
EP1148538A4 (en) * | 1998-12-25 | 2009-10-21 | Hitachi Chemical Co Ltd | CMP ABRASIVE, LIQUID SUPPLEMENT FOR DASSEL AND SUBSTRATE POLISHING METHOD |
KR100515782B1 (ko) | 1999-05-28 | 2005-09-23 | 히다치 가세고교 가부시끼가이샤 | 산화세륨의 제조방법, 산화세륨연마제, 이것을 사용한기판의 연마방법 및 반도체장치의 제조방법 |
WO2001000744A1 (fr) * | 1999-06-28 | 2001-01-04 | Nissan Chemical Industries, Ltd. | Compose abrasif pour plateau en verre de disque dur |
JP3957924B2 (ja) * | 1999-06-28 | 2007-08-15 | 株式会社東芝 | Cmp研磨方法 |
US6602111B1 (en) * | 1999-07-16 | 2003-08-05 | Seimi Chemical Co., Ltd. | Abrasive |
TW501197B (en) | 1999-08-17 | 2002-09-01 | Hitachi Chemical Co Ltd | Polishing compound for chemical mechanical polishing and method for polishing substrate |
JP3805588B2 (ja) * | 1999-12-27 | 2006-08-02 | 株式会社日立製作所 | 半導体装置の製造方法 |
KR100370873B1 (ko) * | 2000-04-28 | 2003-02-05 | 미츠이 긴조쿠 고교 가부시키가이샤 | 자기기록 매체용 유리기판의 제조방법 |
US6443811B1 (en) * | 2000-06-20 | 2002-09-03 | Infineon Technologies Ag | Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing |
EP1243633A4 (en) * | 2000-10-02 | 2009-05-27 | Mitsui Mining & Smelting Co | ABRASIVE CERIUM-BASED MATERIAL AND PROCESS FOR PRODUCING THE SAME |
KR100450522B1 (ko) * | 2000-12-18 | 2004-10-01 | 주식회사 소디프신소재 | 초미분 산화 세륨 연마제의 제조 방법, 이에 의해 제조된연마제 및 이를 사용하여 기판을 연마하는 방법 |
TWI272249B (en) * | 2001-02-27 | 2007-02-01 | Nissan Chemical Ind Ltd | Crystalline ceric oxide sol and process for producing the same |
JP5017574B2 (ja) * | 2001-05-25 | 2012-09-05 | エア プロダクツ アンド ケミカルズ インコーポレイテッド | 酸化セリウム研磨剤及び基板の製造方法 |
JP4002740B2 (ja) * | 2001-05-29 | 2007-11-07 | 三井金属鉱業株式会社 | セリウム系研摩材の製造方法 |
US6811470B2 (en) | 2001-07-16 | 2004-11-02 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing shallow trench isolation substrates |
CN1295291C (zh) * | 2001-08-20 | 2007-01-17 | 三星康宁株式会社 | 包括二氧化硅涂覆铈土的抛光淤浆 |
US6677239B2 (en) | 2001-08-24 | 2004-01-13 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing |
US20080141594A1 (en) * | 2001-09-28 | 2008-06-19 | Mikio Kishimoto | Non-magnetic plate-form particles, method for producing the same, and abrasive, abrasive member and abrasive liquid comprising the same |
US20060032836A1 (en) * | 2001-11-16 | 2006-02-16 | Ferro Corporation | Methods of controlling the properties of abrasive particles for use in chemical-mechanical polishing slurries |
US6596042B1 (en) | 2001-11-16 | 2003-07-22 | Ferro Corporation | Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process |
WO2003044123A1 (en) * | 2001-11-16 | 2003-05-30 | Ferro Corporation | Particles for use in cmp slurries and method for producing them |
US7666239B2 (en) * | 2001-11-16 | 2010-02-23 | Ferro Corporation | Hydrothermal synthesis of cerium-titanium oxide for use in CMP |
EP1444308B1 (en) * | 2001-11-16 | 2011-01-12 | Showa Denko K.K. | Cerium-based polish and cerium-based polish slurry |
US7560433B2 (en) * | 2001-12-21 | 2009-07-14 | Biotempt B.V. | Treatment of multiple sclerosis (MS) |
US7199056B2 (en) * | 2002-02-08 | 2007-04-03 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
JP2003313542A (ja) * | 2002-04-22 | 2003-11-06 | Jsr Corp | 化学機械研磨用水系分散体 |
JP4554363B2 (ja) * | 2002-07-22 | 2010-09-29 | Agcセイミケミカル株式会社 | 半導体用研磨剤、その製造方法及び研磨方法 |
US7063597B2 (en) | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
AU2003275697A1 (en) * | 2002-10-28 | 2004-05-13 | Nissan Chemical Industries, Ltd. | Cerium oxide particles and process for the production thereof |
CN100337926C (zh) * | 2002-10-28 | 2007-09-19 | 日产化学工业株式会社 | 氧化铈粒子及其制造方法 |
US6863825B2 (en) * | 2003-01-29 | 2005-03-08 | Union Oil Company Of California | Process for removing arsenic from aqueous streams |
KR100539983B1 (ko) * | 2003-05-15 | 2006-01-10 | 학교법인 한양학원 | Cmp용 세리아 연마제 및 그 제조 방법 |
TWI278507B (en) * | 2003-05-28 | 2007-04-11 | Hitachi Chemical Co Ltd | Polishing agent and polishing method |
TWI332981B (en) * | 2003-07-17 | 2010-11-11 | Showa Denko Kk | Method for producing cerium oxide abrasives and cerium oxide abrasives obtained by the method |
US7258834B2 (en) * | 2003-08-01 | 2007-08-21 | Agilent Technologies, Inc. | Methods and devices for modifying a substrate surface |
US20080219130A1 (en) | 2003-08-14 | 2008-09-11 | Mempile Inc. C/O Phs Corporate Services, Inc. | Methods and Apparatus for Formatting and Tracking Information for Three-Dimensional Storage Medium |
JP4574140B2 (ja) * | 2003-08-27 | 2010-11-04 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いる研磨方法 |
JP4336550B2 (ja) * | 2003-09-09 | 2009-09-30 | 花王株式会社 | 磁気ディスク用研磨液キット |
US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
TWI334882B (en) * | 2004-03-12 | 2010-12-21 | K C Tech Co Ltd | Polishing slurry and method of producing same |
KR100599327B1 (ko) * | 2004-03-12 | 2006-07-19 | 주식회사 케이씨텍 | Cmp용 슬러리 및 그의 제조법 |
TW200613485A (en) * | 2004-03-22 | 2006-05-01 | Kao Corp | Polishing composition |
TWI283008B (en) * | 2004-05-11 | 2007-06-21 | K C Tech Co Ltd | Slurry for CMP and method of producing the same |
KR100599329B1 (ko) * | 2004-05-11 | 2006-07-14 | 주식회사 케이씨텍 | 연마용 슬러리 및 기판 연마 방법 |
FR2870148B1 (fr) * | 2004-05-12 | 2006-07-07 | Snecma Moteurs Sa | Procede de fonderie a cire perdue avec couche de contact |
KR100630691B1 (ko) * | 2004-07-15 | 2006-10-02 | 삼성전자주식회사 | 산화세륨 연마 입자 및 그 제조 방법과 cmp용 슬러리조성물 및 그 제조 방법과 이들을 이용한 기판 연마 방법 |
TWI273632B (en) * | 2004-07-28 | 2007-02-11 | K C Tech Co Ltd | Polishing slurry, method of producing same, and method of polishing substrate |
US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
KR100638317B1 (ko) * | 2004-07-28 | 2006-10-25 | 주식회사 케이씨텍 | 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법 |
US20070258875A1 (en) * | 2004-09-03 | 2007-11-08 | Showa Denko K.K. | Mixed Rare Earth Oxide, Mixed Rare Earth Fluoride, Cerium-Based Abrasive Using the Materials and Production Processes Thereof |
CN101333418B (zh) * | 2004-09-28 | 2011-05-25 | 日立化成工业株式会社 | Cmp抛光剂以及衬底的抛光方法 |
US20060088976A1 (en) * | 2004-10-22 | 2006-04-27 | Applied Materials, Inc. | Methods and compositions for chemical mechanical polishing substrates |
TWI323741B (en) * | 2004-12-16 | 2010-04-21 | K C Tech Co Ltd | Abrasive particles, polishing slurry, and producing method thereof |
KR101082620B1 (ko) * | 2004-12-16 | 2011-11-15 | 학교법인 한양학원 | 연마용 슬러리 |
CN100588698C (zh) * | 2005-01-26 | 2010-02-10 | Lg化学株式会社 | 氧化铈研磨剂以及包含该研磨剂的浆料 |
TWI338036B (en) * | 2005-04-04 | 2011-03-01 | Showa Denko Kk | Cerium-based oxide abrasive, and producing method and use thereof |
KR100641348B1 (ko) | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
JP4679277B2 (ja) * | 2005-07-11 | 2011-04-27 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
KR100753994B1 (ko) * | 2005-08-05 | 2007-09-06 | 정인 | 유리 연마용 세륨계 연마재 조성물의 제조방법 및 이를연마에 사용하는 방법 |
KR100725699B1 (ko) * | 2005-09-02 | 2007-06-07 | 주식회사 엘지화학 | 일액형 cmp 슬러리용 산화 세륨 분말, 그 제조방법,이를 포함하는 일액형 cmp 슬러리 조성물, 및 상기슬러리를 사용하는 얕은 트랜치 소자 분리방법 |
JP2007103514A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨用組成物及び研磨方法 |
TWI363790B (en) | 2005-10-19 | 2012-05-11 | Hitachi Chemical Co Ltd | Cerium oxide slurry, cerium oxide polishing solution and polishing method by utilizing the same |
KR100812052B1 (ko) | 2005-11-14 | 2008-03-10 | 주식회사 엘지화학 | 탄산세륨 분말, 산화세륨 분말, 그 제조방법, 및 이를포함하는 cmp 슬러리 |
KR101194881B1 (ko) * | 2006-01-31 | 2012-10-25 | 히다치 가세고교 가부시끼가이샤 | 절연막 연마용 cmp 연마제, 연마 방법, 상기 연마 방법으로 연마된 반도체 전자 부품 |
JP5353238B2 (ja) * | 2006-04-21 | 2013-11-27 | 日立化成株式会社 | 酸化物粒子の製造方法、スラリー、研磨剤および基板の研磨方法 |
KR100813100B1 (ko) * | 2006-06-29 | 2008-03-17 | 성균관대학교산학협력단 | 실시간 확장 가능한 스테레오 매칭 시스템 및 방법 |
KR100852242B1 (ko) * | 2006-08-16 | 2008-08-13 | 삼성전자주식회사 | 화학 기계적 연마용 슬러리 조성물, 이를 이용한 연마 방법및 반도체 메모리 소자의 제조 방법 |
KR101041272B1 (ko) * | 2006-09-22 | 2011-06-14 | 주식회사 엘지화학 | 산화세륨 나노 분말의 제조방법 |
DE112007002470T5 (de) * | 2006-10-16 | 2009-09-10 | Cabot Microelectronics Corp., Aurora | Glaspoliermittel und -verfahren |
JP2008117807A (ja) * | 2006-10-31 | 2008-05-22 | Fujimi Inc | 研磨用組成物及び研磨方法 |
JP2008130988A (ja) * | 2006-11-24 | 2008-06-05 | Fujimi Inc | 研磨用組成物及び研磨方法 |
US8066874B2 (en) | 2006-12-28 | 2011-11-29 | Molycorp Minerals, Llc | Apparatus for treating a flow of an aqueous solution containing arsenic |
US8084529B2 (en) * | 2006-12-28 | 2011-12-27 | Dow Corning Toray Co., Ltd. | Thermosetting silicone rubber composition |
US7696095B2 (en) * | 2007-02-23 | 2010-04-13 | Ferro Corporation | Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide |
US8349764B2 (en) | 2007-10-31 | 2013-01-08 | Molycorp Minerals, Llc | Composition for treating a fluid |
US8252087B2 (en) | 2007-10-31 | 2012-08-28 | Molycorp Minerals, Llc | Process and apparatus for treating a gas containing a contaminant |
CN104828852A (zh) | 2008-02-12 | 2015-08-12 | 圣戈本陶瓷及塑料股份有限公司 | 二氧化铈材料及其形成方法 |
EP2301653A4 (en) * | 2008-07-14 | 2013-03-13 | Fujimi Inc | FILTRATION METHOD, METHOD FOR CLEANING A SLIP COMPOSITION THEREWITH, METHOD FOR RENEWING THE FILTER USED IN THE FILTRATION AND DEVICE FOR RENEWING THE FILTER |
KR100873945B1 (ko) * | 2008-07-16 | 2008-12-12 | (주) 뉴웰 | 미세 산화세륨 분말 그 제조 방법 및 이를 포함하는 씨엠피슬러리 |
FI20095088A (fi) * | 2009-02-02 | 2010-08-03 | Lauri Ylikorpi | Päällysteen poistoaine |
CN102597142B (zh) * | 2009-11-13 | 2014-09-17 | 巴斯夫欧洲公司 | 包含无机粒子与聚合物粒子的化学机械抛光(cmp)组合物 |
JP2011173958A (ja) * | 2010-02-23 | 2011-09-08 | Tokyo Electron Ltd | スラリー製造方法、スラリー、研磨方法及び研磨装置 |
JP5819076B2 (ja) * | 2010-03-10 | 2015-11-18 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP5819589B2 (ja) | 2010-03-10 | 2015-11-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物を用いた方法 |
CN102666014B (zh) | 2010-03-12 | 2017-10-31 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法 |
RU2577281C2 (ru) * | 2010-09-08 | 2016-03-10 | Басф Се | Водная полирующая композиция и способ химико-механического полирования материалов подложек для электрических, механических и оптических устройств |
US20130200039A1 (en) * | 2010-09-08 | 2013-08-08 | Basf Se | Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts |
JP2012087213A (ja) * | 2010-10-19 | 2012-05-10 | Nippon Parkerizing Co Ltd | 金属材用親水性皮膜、親水化処理剤、及び親水化処理方法 |
CN103374330B (zh) * | 2010-11-22 | 2015-10-14 | 日立化成株式会社 | 磨粒的制造方法、悬浮液的制造方法以及研磨液的制造方法 |
US9988573B2 (en) * | 2010-11-22 | 2018-06-05 | Hitachi Chemical Company, Ltd. | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
CN103222036B (zh) | 2010-11-22 | 2016-11-09 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
TWI573863B (zh) | 2010-12-28 | 2017-03-11 | 聖高拜陶器塑膠公司 | 包括氧化鋯顆粒的拋光漿料以及使用這種拋光漿料之方法 |
US9233863B2 (en) | 2011-04-13 | 2016-01-12 | Molycorp Minerals, Llc | Rare earth removal of hydrated and hydroxyl species |
TWI619805B (zh) * | 2011-11-08 | 2018-04-01 | 福吉米股份有限公司 | 用於硬脆材料之研磨用組成物、硬脆材料基板之研磨方法及製造方法 |
MY177685A (en) * | 2011-12-22 | 2020-09-23 | Konica Minolta Inc | Abrasive material regeneration method and regenerated abrasive material |
US10017675B2 (en) * | 2011-12-27 | 2018-07-10 | Konica Minolta, Inc. | Method for separating polishing material and regenerated polishing material |
CN107617968A (zh) | 2012-02-21 | 2018-01-23 | 日立化成株式会社 | 研磨剂、研磨剂组和基体的研磨方法 |
US9346977B2 (en) | 2012-02-21 | 2016-05-24 | Hitachi Chemical Company, Ltd. | Abrasive, abrasive set, and method for abrading substrate |
KR20150014924A (ko) * | 2012-04-18 | 2015-02-09 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
JP5943072B2 (ja) | 2012-05-22 | 2016-06-29 | 日立化成株式会社 | スラリー、研磨液セット、研磨液及び基体の研磨方法 |
KR102034331B1 (ko) | 2012-05-22 | 2019-10-18 | 히타치가세이가부시끼가이샤 | 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체 |
JP5943074B2 (ja) | 2012-05-22 | 2016-06-29 | 日立化成株式会社 | スラリー、研磨液セット、研磨液及び基体の研磨方法 |
KR101405333B1 (ko) | 2013-09-12 | 2014-06-11 | 유비머트리얼즈주식회사 | 연마 입자, 연마 슬러리 및 이를 이용한 반도체 소자의 제조 방법 |
KR101405334B1 (ko) | 2013-09-12 | 2014-06-11 | 유비머트리얼즈주식회사 | 연마 입자의 제조 방법 및 연마 슬러리의 제조 방법 |
EP3083501B1 (en) * | 2013-12-16 | 2020-02-12 | Rhodia Operations | Liquid suspension of cerium oxide particles |
MX370462B (es) | 2014-03-07 | 2019-12-13 | Secure Natural Resources Llc | Oxido de cerio (iv) con propiedades de remocion de arsenico excepcionales. |
TWI662116B (zh) | 2014-05-30 | 2019-06-11 | 日商日立化成股份有限公司 | Cmp用研磨液、cmp用研磨液套組及研磨方法 |
KR101773543B1 (ko) | 2015-06-30 | 2017-09-01 | 유비머트리얼즈주식회사 | 연마 입자, 연마 슬러리 및 연마 입자의 제조 방법 |
WO2017011115A1 (en) * | 2015-07-10 | 2017-01-19 | Ferro Corporation | Slurry composition and additives and method for polishing organic polymer-based ophthalmic substrates |
WO2018038885A1 (en) | 2016-08-26 | 2018-03-01 | Ferro Corporation | Slurry composition and method of selective silica polishing |
KR102656824B1 (ko) | 2016-12-22 | 2024-04-11 | 일루미나, 인코포레이티드 | 유동셀 패키지 및 이의 제조 방법 |
KR20200056808A (ko) * | 2018-11-15 | 2020-05-25 | 솔브레인 주식회사 | 연마 첨가제 조성물, 연마 슬러리 조성물 및 반도체 소자의 절연막의 연마 방법 |
CN110788698B (zh) * | 2019-10-14 | 2020-11-06 | 上海交通大学 | 基于雾化CeO2辅助轴向进给的磨削加工方法、系统、介质及设备 |
US11508405B1 (en) | 2021-06-21 | 2022-11-22 | Western Digital Technologies, Inc. | Magnetic recording media with plasma-polished pre-seed layer or substrate |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE7621572U1 (de) | 1976-07-08 | 1976-10-28 | Skf Kugellagerfabriken Gmbh, 8720 Schweinfurt | Kupplungsausruecker, insbesondere fuer kraftfahrzeuge |
US4462188A (en) | 1982-06-21 | 1984-07-31 | Nalco Chemical Company | Silica sol compositions for polishing silicon wafers |
US4475981A (en) * | 1983-10-28 | 1984-10-09 | Ampex Corporation | Metal polishing composition and process |
US4588421A (en) | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
FR2583034A1 (fr) | 1985-06-10 | 1986-12-12 | Rhone Poulenc Spec Chim | Nouvel oxyde cerique, son procede de fabrication et ses applications |
FR2617154B1 (fr) * | 1987-06-29 | 1990-11-30 | Rhone Poulenc Chimie | Procede d'obtention d'oxyde cerique et oxyde cerique a nouvelles caracteristiques morphologiques |
JPH0297424A (ja) | 1988-10-04 | 1990-04-10 | Iwao Jiki Kogyo Kk | アルミナージルコニア複合粉体の製造方法 |
US4954142A (en) | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
US4959113C1 (en) | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
JP2850254B2 (ja) | 1989-09-27 | 1999-01-27 | 株式会社フジミインコーポレーテッド | 研磨剤組成物 |
JP2779041B2 (ja) | 1990-04-04 | 1998-07-23 | 株式会社ノリタケカンパニーリミテド | 酸化クロムを添加した微結晶構造アルミナ焼結研摩材及びその製法 |
JP2506503B2 (ja) | 1990-11-29 | 1996-06-12 | 東芝セラミックス株式会社 | 積層セラミック多孔体 |
CA2064977C (en) | 1991-04-05 | 1998-09-22 | Eiichi Shiraishi | Catalyst for purifying exhaust gas |
JP3183906B2 (ja) | 1991-06-25 | 2001-07-09 | 株式会社日本触媒 | ジルコニアシート |
JPH052778A (ja) | 1991-06-27 | 1993-01-08 | Canon Inc | 電鋳装置およびそれを用いたスタンパーの製造方法 |
DE4124560A1 (de) | 1991-07-24 | 1993-01-28 | Wacker Chemie Gmbh | Beschichtungsmittel zur herstellung von wasserdichten, dampfdurchlaessigen und flammverzoegernden beschichtungen |
US5264010A (en) | 1992-04-27 | 1993-11-23 | Rodel, Inc. | Compositions and methods for polishing and planarizing surfaces |
JP3335667B2 (ja) | 1992-05-26 | 2002-10-21 | 株式会社東芝 | 半導体装置の製造方法 |
JP2914860B2 (ja) | 1992-10-20 | 1999-07-05 | 株式会社東芝 | 半導体装置とその製造方法および研磨方法ならびに研磨装置および研磨装置の研磨面の再生方法 |
KR950704207A (ko) * | 1992-12-23 | 1995-11-17 | 테릴 컨트 퀼리 | 산화 망간을 함유하는 연마재 그레인(abrasive grain containing man-ganese oxide) |
US5525559A (en) * | 1993-02-13 | 1996-06-11 | Tioxide Specialties Limited | Preparation of mixed powders |
JPH06263515A (ja) | 1993-03-15 | 1994-09-20 | Kyocera Corp | セラミック泥漿の製造方法 |
JP2832270B2 (ja) | 1993-05-18 | 1998-12-09 | 三井金属鉱業株式会社 | ガラス研磨用研磨材 |
JP3287696B2 (ja) | 1993-05-27 | 2002-06-04 | 花王株式会社 | 高濃度一液型アルカリ洗浄剤組成物およびその製造方法 |
US5389352A (en) * | 1993-07-21 | 1995-02-14 | Rodel, Inc. | Oxide particles and method for producing them |
JPH0770553A (ja) | 1993-09-01 | 1995-03-14 | Asahi Glass Co Ltd | 研磨液及び基体の研磨方法 |
JPH07116431A (ja) | 1993-10-25 | 1995-05-09 | Kikusui Kagaku Kogyo Kk | 微細気孔径を有するフィルタ |
JPH07172933A (ja) | 1993-11-01 | 1995-07-11 | Matsushita Electric Ind Co Ltd | セラミックスラリーの製造方法 |
US5489204A (en) | 1993-12-28 | 1996-02-06 | Minnesota Mining And Manufacturing Company | Apparatus for sintering abrasive grain |
JPH083541A (ja) | 1994-06-17 | 1996-01-09 | Taki Chem Co Ltd | 精密研磨剤 |
JP3509188B2 (ja) | 1994-06-22 | 2004-03-22 | ソニー株式会社 | 化学機械研磨用微粒子の製造方法及びこれを用いた研磨方法 |
JP3278532B2 (ja) * | 1994-07-08 | 2002-04-30 | 株式会社東芝 | 半導体装置の製造方法 |
JP3837754B2 (ja) | 1994-07-11 | 2006-10-25 | 日産化学工業株式会社 | 結晶性酸化第二セリウムの製造方法 |
TW311905B (zh) * | 1994-07-11 | 1997-08-01 | Nissan Chemical Ind Ltd | |
JP3680367B2 (ja) | 1994-08-19 | 2005-08-10 | 株式会社日立製作所 | 配線基板 |
JP3430733B2 (ja) | 1994-09-30 | 2003-07-28 | 株式会社日立製作所 | 研磨剤及び研磨方法 |
US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
JP2864451B2 (ja) * | 1994-11-07 | 1999-03-03 | 三井金属鉱業株式会社 | 研磨材及び研磨方法 |
JP3576261B2 (ja) | 1995-03-29 | 2004-10-13 | 東京磁気印刷株式会社 | 分散/凝集状態を制御した遊離砥粒スラリー、その製造法及びその分散方法 |
KR960041316A (ko) * | 1995-05-22 | 1996-12-19 | 고사이 아키오 | 연마용 입상체, 이의 제조방법 및 이의 용도 |
JPH0948672A (ja) | 1995-08-02 | 1997-02-18 | Kanebo Ltd | セラミックスラリーの調製法 |
JP3359479B2 (ja) * | 1995-11-07 | 2002-12-24 | 三井金属鉱業株式会社 | 研磨材、その製造方法及び研磨方法 |
EP0820092A4 (en) * | 1996-02-07 | 2000-03-29 | Hitachi Chemical Co Ltd | CERIUM OXIDE ABRASIVE, SEMICONDUCTOR MICROPLATE, SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING THE SAME, AND METHOD FOR POLISHING THE SUBSTRATES |
JPH09270402A (ja) | 1996-03-29 | 1997-10-14 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の製造法 |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
JPH10102038A (ja) | 1996-09-30 | 1998-04-21 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
JP3462052B2 (ja) | 1996-09-30 | 2003-11-05 | 日立化成工業株式会社 | 酸化セリウム研磨剤および基板の研磨法 |
CN1245471C (zh) * | 1996-09-30 | 2006-03-15 | 日立化成工业株式会社 | 氧化铈研磨剂以及基板的研磨方法 |
US5876490A (en) * | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
JPH10106994A (ja) | 1997-01-28 | 1998-04-24 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
JPH1112561A (ja) | 1997-04-28 | 1999-01-19 | Seimi Chem Co Ltd | 半導体用研磨剤および半導体用研磨剤の製造方法 |
TW365563B (en) * | 1997-04-28 | 1999-08-01 | Seimi Chem Kk | Polishing agent for semiconductor and method for its production |
CN1328163C (zh) * | 2002-11-22 | 2007-07-25 | 日本艾罗西尔股份有限公司 | 高浓度硅石泥浆 |
-
1997
- 1997-09-30 CN CNB03119818XA patent/CN1245471C/zh not_active Expired - Lifetime
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- 1997-09-30 CN CNB97199370XA patent/CN1282226C/zh not_active Expired - Lifetime
- 1997-09-30 EP EP09178160A patent/EP2164095A1/en not_active Withdrawn
- 1997-09-30 KR KR1020077015361A patent/KR100775228B1/ko active IP Right Grant
- 1997-09-30 KR KR10-1999-7002723A patent/KR100420087B1/ko not_active IP Right Cessation
- 1997-09-30 WO PCT/JP1997/003490 patent/WO1998014987A1/ja not_active Application Discontinuation
- 1997-09-30 KR KR1020067021504A patent/KR100759182B1/ko active IP Right Grant
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Correction item: Priority Correct: 1997.01.28 JP 014371/97|1997.04.30 JP 112396/97|1997.08.1 JP 207866/97 False: Lack of priority of item 10-12 Number: 11 Page: The title page Volume: 22 |
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COR | Change of bibliographic data |
Free format text: CORRECT: PRIORITY; FROM: LACK ITEM NO. 10-12 PRIORITY TO: 1997.1.28 JP 014371/97 1997.4.30 JP 112396/97 1997.8.1 JP 207866/97 |
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ERR | Gazette correction |
Free format text: CORRECT: PRIORITY; FROM: LACK ITEM NO. 10-12 PRIORITY TO: 1997.1.28 JP 014371/97 1997.4.30 JP 112396/97 1997.8.1 JP 207866/97 |
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CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20060315 |