KR100761636B1 - 산화세륨 입자 - Google Patents
산화세륨 입자 Download PDFInfo
- Publication number
- KR100761636B1 KR100761636B1 KR1020067021503A KR20067021503A KR100761636B1 KR 100761636 B1 KR100761636 B1 KR 100761636B1 KR 1020067021503 A KR1020067021503 A KR 1020067021503A KR 20067021503 A KR20067021503 A KR 20067021503A KR 100761636 B1 KR100761636 B1 KR 100761636B1
- Authority
- KR
- South Korea
- Prior art keywords
- particles
- cerium oxide
- slurry
- polishing
- insulating film
- Prior art date
Links
- 239000002245 particle Substances 0.000 title claims abstract description 221
- 229910000420 cerium oxide Inorganic materials 0.000 title claims abstract description 136
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 title claims abstract description 136
- 239000002002 slurry Substances 0.000 claims abstract description 87
- 239000011164 primary particle Substances 0.000 claims abstract description 56
- 239000000843 powder Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 20
- 238000004458 analytical method Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 abstract description 97
- 239000000758 substrate Substances 0.000 abstract description 37
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 29
- 239000004065 semiconductor Substances 0.000 abstract description 25
- 230000007547 defect Effects 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 119
- 239000010410 layer Substances 0.000 description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 20
- 238000005259 measurement Methods 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 16
- 238000000227 grinding Methods 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000011802 pulverized particle Substances 0.000 description 12
- 238000003991 Rietveld refinement Methods 0.000 description 11
- 238000002441 X-ray diffraction Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229920000058 polyacrylate Polymers 0.000 description 7
- 238000005406 washing Methods 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 6
- 238000009837 dry grinding Methods 0.000 description 6
- -1 polyoxyethylene lauryl ether ammonium sulfate Polymers 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000004438 BET method Methods 0.000 description 5
- 241000403354 Microplus Species 0.000 description 5
- 239000004744 fabric Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 239000002270 dispersing agent Substances 0.000 description 4
- 238000007561 laser diffraction method Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 4
- 238000001132 ultrasonic dispersion Methods 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 3
- 239000003945 anionic surfactant Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- KHSBAWXKALEJFR-UHFFFAOYSA-H cerium(3+);tricarbonate;hydrate Chemical compound O.[Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O KHSBAWXKALEJFR-UHFFFAOYSA-H 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 150000001785 cerium compounds Chemical class 0.000 description 2
- KKFPIBHAPSRIPB-UHFFFAOYSA-N cerium(3+);oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Ce+3].[Ce+3] KKFPIBHAPSRIPB-UHFFFAOYSA-N 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 239000005304 optical glass Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000000733 zeta-potential measurement Methods 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 1
- 229940063953 ammonium lauryl sulfate Drugs 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical group Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Abstract
Description
Claims (3)
- 매체, 및 매체 중 분산된 산화 세륨 슬러리 입자를 함유하는 슬러리를 포함하고,상기 슬러리는 산화 세륨 입자를 매체 중에 분산시킴으로써 얻어지며,상기 산화 세륨 슬러리 입자는 1차 입자의 중위 입경이 30 내지 250 nm이고, 입자의 중위 입경이 150 내지 600 nm이고, 입자의 최대 직경이 3000 nm 이하이며,상기 산화 세륨 입자는 분말 X선 리트 벨트법 (RIETAN-94)에 의한 해석에서 등방적 미소 변형을 나타내는 구조 파라미터 Y값이 0.01 내지 0.70인,산화 세륨 연마제.
- 매체, 및 매체 중 분산된 산화 세륨 슬러리 입자를 함유하는 슬러리를 포함하고,상기 산화 세륨 슬러리 입자는 1차 입자의 중위 입경이 30 내지 250 nm이고, 입자의 중위 입경이 150 내지 600 nm이고, 입자의 최대 직경이 3000 nm 이하이며,제타 전위가 -100 mV 내지 -10 mV인,산화 세륨 연마제.
- 삭제
Applications Claiming Priority (24)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25877496 | 1996-09-30 | ||
JP25877596 | 1996-09-30 | ||
JPJP-P-1996-00258776 | 1996-09-30 | ||
JPJP-P-1996-00258774 | 1996-09-30 | ||
JP8258768A JPH10102039A (ja) | 1996-09-30 | 1996-09-30 | 酸化セリウム研磨剤及び基板の研磨法 |
JPJP-P-1996-00259138 | 1996-09-30 | ||
JPJP-P-1996-00258766 | 1996-09-30 | ||
JP8258767A JPH10102038A (ja) | 1996-09-30 | 1996-09-30 | 酸化セリウム研磨剤及び基板の研磨法 |
JPJP-P-1996-00258781 | 1996-09-30 | ||
JP25877696 | 1996-09-30 | ||
JPJP-P-1996-00258767 | 1996-09-30 | ||
JPJP-P-1996-00258775 | 1996-09-30 | ||
JP25877096 | 1996-09-30 | ||
JP25878196A JPH10106993A (ja) | 1996-09-30 | 1996-09-30 | 基板の研磨法 |
JP25913896A JPH10106982A (ja) | 1996-09-30 | 1996-09-30 | 研磨方法 |
JP08258766 | 1996-09-30 | ||
JPJP-P-1996-00258768 | 1996-09-30 | ||
JPJP-P-1996-00258770 | 1996-09-30 | ||
JPJP-P-1997-00014371 | 1997-01-28 | ||
JP1437197A JPH10154672A (ja) | 1996-09-30 | 1997-01-28 | 酸化セリウム研磨剤及び基板の研磨法 |
JP11239697A JPH10298538A (ja) | 1997-04-30 | 1997-04-30 | 酸化セリウム研磨剤及び基板の研磨法 |
JPJP-P-1997-00112396 | 1997-04-30 | ||
JP20786697A JPH10154673A (ja) | 1996-09-30 | 1997-08-01 | 酸化セリウム研磨剤及び基板の研磨法 |
JPJP-P-1997-00207866 | 1997-08-01 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020047006307A Division KR100710779B1 (ko) | 1996-09-30 | 1997-09-30 | 산화세륨 입자 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020077015361A Division KR100775228B1 (ko) | 1996-09-30 | 1997-09-30 | 산화세륨 연마제 및 기판의 연마법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060114043A KR20060114043A (ko) | 2006-11-03 |
KR100761636B1 true KR100761636B1 (ko) | 2007-09-27 |
Family
ID=27583174
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020067021503A KR100761636B1 (ko) | 1996-09-30 | 1997-09-30 | 산화세륨 입자 |
KR1020077015361A KR100775228B1 (ko) | 1996-09-30 | 1997-09-30 | 산화세륨 연마제 및 기판의 연마법 |
KR10-1999-7002723A KR100420087B1 (ko) | 1996-09-30 | 1997-09-30 | 산화세륨 연마제 및 기판의 연마법 |
KR1020067021504A KR100759182B1 (ko) | 1996-09-30 | 1997-09-30 | 산화세륨 입자 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020077015361A KR100775228B1 (ko) | 1996-09-30 | 1997-09-30 | 산화세륨 연마제 및 기판의 연마법 |
KR10-1999-7002723A KR100420087B1 (ko) | 1996-09-30 | 1997-09-30 | 산화세륨 연마제 및 기판의 연마법 |
KR1020067021504A KR100759182B1 (ko) | 1996-09-30 | 1997-09-30 | 산화세륨 입자 |
Country Status (8)
Country | Link |
---|---|
US (5) | US6221118B1 (ko) |
EP (4) | EP1833084B1 (ko) |
KR (4) | KR100761636B1 (ko) |
CN (3) | CN1245471C (ko) |
AU (1) | AU4323197A (ko) |
CA (1) | CA2263241C (ko) |
RU (1) | RU2178599C2 (ko) |
WO (1) | WO1998014987A1 (ko) |
Families Citing this family (120)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1245471C (zh) * | 1996-09-30 | 2006-03-15 | 日立化成工业株式会社 | 氧化铈研磨剂以及基板的研磨方法 |
TW365563B (en) * | 1997-04-28 | 1999-08-01 | Seimi Chem Kk | Polishing agent for semiconductor and method for its production |
JPH11181403A (ja) | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
US6533832B2 (en) * | 1998-06-26 | 2003-03-18 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry and method for using same |
US6593408B1 (en) | 1998-11-13 | 2003-07-15 | Mitsui Chemicals, Inc. | Organic polymer/inorganic fine particle-dispersed aqueous solution having excellent stability and uses thereof |
KR100475976B1 (ko) * | 1998-12-25 | 2005-03-15 | 히다치 가세고교 가부시끼가이샤 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
EP1201607B1 (en) | 1999-05-28 | 2014-07-30 | Hitachi Chemical Company, Ltd. | Cerium oxide abrasive, method for polishing substrate using the same and method for manufacturing semiconductor device |
JP3957924B2 (ja) * | 1999-06-28 | 2007-08-15 | 株式会社東芝 | Cmp研磨方法 |
EP1201725A4 (en) * | 1999-06-28 | 2007-09-12 | Nissan Chemical Ind Ltd | ABRASIVE COMPOUND FOR HARD DISK GLASS TRAY |
US6602111B1 (en) * | 1999-07-16 | 2003-08-05 | Seimi Chemical Co., Ltd. | Abrasive |
TW501197B (en) | 1999-08-17 | 2002-09-01 | Hitachi Chemical Co Ltd | Polishing compound for chemical mechanical polishing and method for polishing substrate |
JP3805588B2 (ja) * | 1999-12-27 | 2006-08-02 | 株式会社日立製作所 | 半導体装置の製造方法 |
KR100370873B1 (ko) * | 2000-04-28 | 2003-02-05 | 미츠이 긴조쿠 고교 가부시키가이샤 | 자기기록 매체용 유리기판의 제조방법 |
US6443811B1 (en) * | 2000-06-20 | 2002-09-03 | Infineon Technologies Ag | Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing |
JP3960914B2 (ja) * | 2000-10-02 | 2007-08-15 | 三井金属鉱業株式会社 | セリウム系研摩材及びセリウム系研摩材の製造方法 |
KR100450522B1 (ko) * | 2000-12-18 | 2004-10-01 | 주식회사 소디프신소재 | 초미분 산화 세륨 연마제의 제조 방법, 이에 의해 제조된연마제 및 이를 사용하여 기판을 연마하는 방법 |
TWI272249B (en) * | 2001-02-27 | 2007-02-01 | Nissan Chemical Ind Ltd | Crystalline ceric oxide sol and process for producing the same |
JP5017574B2 (ja) * | 2001-05-25 | 2012-09-05 | エア プロダクツ アンド ケミカルズ インコーポレイテッド | 酸化セリウム研磨剤及び基板の製造方法 |
JP4002740B2 (ja) * | 2001-05-29 | 2007-11-07 | 三井金属鉱業株式会社 | セリウム系研摩材の製造方法 |
US6811470B2 (en) | 2001-07-16 | 2004-11-02 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing shallow trench isolation substrates |
JP2005500173A (ja) * | 2001-08-20 | 2005-01-06 | サムソン コーニング カンパニー,リミテッド | シリカ−コーティングされたセリアを含む研磨スラリー |
US6677239B2 (en) | 2001-08-24 | 2004-01-13 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing |
US20080141594A1 (en) * | 2001-09-28 | 2008-06-19 | Mikio Kishimoto | Non-magnetic plate-form particles, method for producing the same, and abrasive, abrasive member and abrasive liquid comprising the same |
US20060032836A1 (en) * | 2001-11-16 | 2006-02-16 | Ferro Corporation | Methods of controlling the properties of abrasive particles for use in chemical-mechanical polishing slurries |
US7666239B2 (en) * | 2001-11-16 | 2010-02-23 | Ferro Corporation | Hydrothermal synthesis of cerium-titanium oxide for use in CMP |
WO2003044123A1 (en) * | 2001-11-16 | 2003-05-30 | Ferro Corporation | Particles for use in cmp slurries and method for producing them |
US6596042B1 (en) | 2001-11-16 | 2003-07-22 | Ferro Corporation | Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process |
WO2003042321A1 (en) * | 2001-11-16 | 2003-05-22 | Showa Denko K.K. | Cerium-based polish and cerium-based polish slurry |
US7560433B2 (en) * | 2001-12-21 | 2009-07-14 | Biotempt B.V. | Treatment of multiple sclerosis (MS) |
US7199056B2 (en) * | 2002-02-08 | 2007-04-03 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
JP2003313542A (ja) * | 2002-04-22 | 2003-11-06 | Jsr Corp | 化学機械研磨用水系分散体 |
DE60330971D1 (de) * | 2002-07-22 | 2010-03-04 | Asahi Glass Co Ltd | Halbleiterschleif prozess zu seiner herstellung und polierverfahren |
US7063597B2 (en) | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
CN100337926C (zh) * | 2002-10-28 | 2007-09-19 | 日产化学工业株式会社 | 氧化铈粒子及其制造方法 |
KR101087763B1 (ko) | 2002-10-28 | 2011-11-30 | 닛산 가가쿠 고교 가부시키 가이샤 | 산화 세륨 입자 및 그 제조방법 |
US6863825B2 (en) * | 2003-01-29 | 2005-03-08 | Union Oil Company Of California | Process for removing arsenic from aqueous streams |
KR100539983B1 (ko) * | 2003-05-15 | 2006-01-10 | 학교법인 한양학원 | Cmp용 세리아 연마제 및 그 제조 방법 |
JP4285480B2 (ja) * | 2003-05-28 | 2009-06-24 | 日立化成工業株式会社 | 研磨剤及び研磨方法 |
TWI332981B (en) * | 2003-07-17 | 2010-11-11 | Showa Denko Kk | Method for producing cerium oxide abrasives and cerium oxide abrasives obtained by the method |
US7258834B2 (en) * | 2003-08-01 | 2007-08-21 | Agilent Technologies, Inc. | Methods and devices for modifying a substrate surface |
US20080219130A1 (en) * | 2003-08-14 | 2008-09-11 | Mempile Inc. C/O Phs Corporate Services, Inc. | Methods and Apparatus for Formatting and Tracking Information for Three-Dimensional Storage Medium |
JP4574140B2 (ja) * | 2003-08-27 | 2010-11-04 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いる研磨方法 |
JP4336550B2 (ja) * | 2003-09-09 | 2009-09-30 | 花王株式会社 | 磁気ディスク用研磨液キット |
US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
CN1667026B (zh) * | 2004-03-12 | 2011-11-30 | K.C.科技股份有限公司 | 抛光浆料及其制备方法和基板的抛光方法 |
KR100599327B1 (ko) * | 2004-03-12 | 2006-07-19 | 주식회사 케이씨텍 | Cmp용 슬러리 및 그의 제조법 |
TW200613485A (en) * | 2004-03-22 | 2006-05-01 | Kao Corp | Polishing composition |
KR100599329B1 (ko) * | 2004-05-11 | 2006-07-14 | 주식회사 케이씨텍 | 연마용 슬러리 및 기판 연마 방법 |
TWI283008B (en) * | 2004-05-11 | 2007-06-21 | K C Tech Co Ltd | Slurry for CMP and method of producing the same |
FR2870148B1 (fr) * | 2004-05-12 | 2006-07-07 | Snecma Moteurs Sa | Procede de fonderie a cire perdue avec couche de contact |
KR100630691B1 (ko) * | 2004-07-15 | 2006-10-02 | 삼성전자주식회사 | 산화세륨 연마 입자 및 그 제조 방법과 cmp용 슬러리조성물 및 그 제조 방법과 이들을 이용한 기판 연마 방법 |
TWI273632B (en) * | 2004-07-28 | 2007-02-11 | K C Tech Co Ltd | Polishing slurry, method of producing same, and method of polishing substrate |
US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
KR100638317B1 (ko) * | 2004-07-28 | 2006-10-25 | 주식회사 케이씨텍 | 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법 |
US20070258875A1 (en) * | 2004-09-03 | 2007-11-08 | Showa Denko K.K. | Mixed Rare Earth Oxide, Mixed Rare Earth Fluoride, Cerium-Based Abrasive Using the Materials and Production Processes Thereof |
CN101333418B (zh) * | 2004-09-28 | 2011-05-25 | 日立化成工业株式会社 | Cmp抛光剂以及衬底的抛光方法 |
US20060088976A1 (en) * | 2004-10-22 | 2006-04-27 | Applied Materials, Inc. | Methods and compositions for chemical mechanical polishing substrates |
KR101082620B1 (ko) * | 2004-12-16 | 2011-11-15 | 학교법인 한양학원 | 연마용 슬러리 |
TWI323741B (en) * | 2004-12-16 | 2010-04-21 | K C Tech Co Ltd | Abrasive particles, polishing slurry, and producing method thereof |
ATE517960T1 (de) * | 2005-01-26 | 2011-08-15 | Lg Chemical Ltd | Ceroxidschleifmittel und diese enthaltende aufschlämmung |
JP3929481B2 (ja) * | 2005-04-04 | 2007-06-13 | 昭和電工株式会社 | 酸化セリウム系研磨材、その製造方法及び用途 |
KR100641348B1 (ko) | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
JP4679277B2 (ja) * | 2005-07-11 | 2011-04-27 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
KR100753994B1 (ko) * | 2005-08-05 | 2007-09-06 | 정인 | 유리 연마용 세륨계 연마재 조성물의 제조방법 및 이를연마에 사용하는 방법 |
KR100725699B1 (ko) * | 2005-09-02 | 2007-06-07 | 주식회사 엘지화학 | 일액형 cmp 슬러리용 산화 세륨 분말, 그 제조방법,이를 포함하는 일액형 cmp 슬러리 조성물, 및 상기슬러리를 사용하는 얕은 트랜치 소자 분리방법 |
JP2007103514A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨用組成物及び研磨方法 |
WO2007046420A1 (ja) * | 2005-10-19 | 2007-04-26 | Hitachi Chemical Co., Ltd. | 酸化セリウムスラリー、酸化セリウム研磨液及びこれらを用いた基板の研磨方法 |
KR100812052B1 (ko) | 2005-11-14 | 2008-03-10 | 주식회사 엘지화학 | 탄산세륨 분말, 산화세륨 분말, 그 제조방법, 및 이를포함하는 cmp 슬러리 |
JP4985409B2 (ja) * | 2006-01-31 | 2012-07-25 | 日立化成工業株式会社 | 絶縁膜研磨用cmp研磨剤、研磨方法、該研磨方法で研磨された半導体電子部品 |
TWI372729B (en) * | 2006-04-21 | 2012-09-21 | Hitachi Chemical Co Ltd | Manufacturing method of oxide particles, slurry, polishing agent and polishing method of the substrate |
KR100813100B1 (ko) * | 2006-06-29 | 2008-03-17 | 성균관대학교산학협력단 | 실시간 확장 가능한 스테레오 매칭 시스템 및 방법 |
KR100852242B1 (ko) * | 2006-08-16 | 2008-08-13 | 삼성전자주식회사 | 화학 기계적 연마용 슬러리 조성물, 이를 이용한 연마 방법및 반도체 메모리 소자의 제조 방법 |
KR101041272B1 (ko) * | 2006-09-22 | 2011-06-14 | 주식회사 엘지화학 | 산화세륨 나노 분말의 제조방법 |
DE112007002470T5 (de) * | 2006-10-16 | 2009-09-10 | Cabot Microelectronics Corp., Aurora | Glaspoliermittel und -verfahren |
JP2008117807A (ja) * | 2006-10-31 | 2008-05-22 | Fujimi Inc | 研磨用組成物及び研磨方法 |
JP2008130988A (ja) * | 2006-11-24 | 2008-06-05 | Fujimi Inc | 研磨用組成物及び研磨方法 |
US8066874B2 (en) | 2006-12-28 | 2011-11-29 | Molycorp Minerals, Llc | Apparatus for treating a flow of an aqueous solution containing arsenic |
EP2105467B1 (en) * | 2006-12-28 | 2012-02-22 | Dow Corning Toray Co., Ltd. | Thermosetting silicone rubber composition |
US7696095B2 (en) * | 2007-02-23 | 2010-04-13 | Ferro Corporation | Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide |
US8252087B2 (en) | 2007-10-31 | 2012-08-28 | Molycorp Minerals, Llc | Process and apparatus for treating a gas containing a contaminant |
US8349764B2 (en) | 2007-10-31 | 2013-01-08 | Molycorp Minerals, Llc | Composition for treating a fluid |
US7993420B2 (en) * | 2008-02-12 | 2011-08-09 | Saint-Gobain Ceramics & Plastics, Inc. | Ceria material and method of forming same |
EP2301653A4 (en) * | 2008-07-14 | 2013-03-13 | Fujimi Inc | FILTRATION METHOD, METHOD FOR CLEANING A SLIP COMPOSITION THEREWITH, METHOD FOR RENEWING THE FILTER USED IN THE FILTRATION AND DEVICE FOR RENEWING THE FILTER |
KR100873945B1 (ko) * | 2008-07-16 | 2008-12-12 | (주) 뉴웰 | 미세 산화세륨 분말 그 제조 방법 및 이를 포함하는 씨엠피슬러리 |
FI20095088A (fi) * | 2009-02-02 | 2010-08-03 | Lauri Ylikorpi | Päällysteen poistoaine |
MY161863A (en) * | 2009-11-13 | 2017-05-15 | Basf Se | A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles |
JP2011173958A (ja) * | 2010-02-23 | 2011-09-08 | Tokyo Electron Ltd | スラリー製造方法、スラリー、研磨方法及び研磨装置 |
JP5819076B2 (ja) * | 2010-03-10 | 2015-11-18 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP5819589B2 (ja) | 2010-03-10 | 2015-11-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物を用いた方法 |
CN102666014B (zh) | 2010-03-12 | 2017-10-31 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法 |
WO2012032466A1 (en) * | 2010-09-08 | 2012-03-15 | Basf Se | Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts |
JP6196155B2 (ja) * | 2010-09-08 | 2017-09-13 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 水性研磨剤組成物、並びに電気、機械及び光学デバイス用の基板材料を研磨する方法 |
JP2012087213A (ja) * | 2010-10-19 | 2012-05-10 | Nippon Parkerizing Co Ltd | 金属材用親水性皮膜、親水化処理剤、及び親水化処理方法 |
KR20130129396A (ko) * | 2010-11-22 | 2013-11-28 | 히타치가세이가부시끼가이샤 | 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판 |
KR20130133186A (ko) * | 2010-11-22 | 2013-12-06 | 히타치가세이가부시끼가이샤 | 지립의 제조 방법, 슬러리의 제조 방법 및 연마액의 제조 방법 |
WO2012070542A1 (ja) | 2010-11-22 | 2012-05-31 | 日立化成工業株式会社 | スラリー、研磨液セット、研磨液、基板の研磨方法及び基板 |
US9120200B2 (en) | 2010-12-28 | 2015-09-01 | Saint-Gobain Ceramics & Plastics, Inc. | Polishing slurry including zirconia particles and a method of using the polishing slurry |
US9233863B2 (en) | 2011-04-13 | 2016-01-12 | Molycorp Minerals, Llc | Rare earth removal of hydrated and hydroxyl species |
WO2013069623A1 (ja) * | 2011-11-08 | 2013-05-16 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
US9796894B2 (en) * | 2011-12-22 | 2017-10-24 | Konica Minolta, Inc. | Abrasive material regeneration method and regenerated abrasive material |
WO2013099666A1 (ja) * | 2011-12-27 | 2013-07-04 | コニカミノルタ株式会社 | 研磨材分離方法及び再生研磨材 |
WO2013125445A1 (ja) | 2012-02-21 | 2013-08-29 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
US10557058B2 (en) | 2012-02-21 | 2020-02-11 | Hitachi Chemical Company, Ltd. | Polishing agent, polishing agent set, and substrate polishing method |
KR20150014924A (ko) * | 2012-04-18 | 2015-02-09 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
SG11201407029XA (en) | 2012-05-22 | 2014-12-30 | Hitachi Chemical Co Ltd | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
CN104321852B (zh) | 2012-05-22 | 2016-12-28 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体 |
SG11201407087XA (en) | 2012-05-22 | 2014-12-30 | Hitachi Chemical Co Ltd | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
KR101405334B1 (ko) | 2013-09-12 | 2014-06-11 | 유비머트리얼즈주식회사 | 연마 입자의 제조 방법 및 연마 슬러리의 제조 방법 |
KR101405333B1 (ko) | 2013-09-12 | 2014-06-11 | 유비머트리얼즈주식회사 | 연마 입자, 연마 슬러리 및 이를 이용한 반도체 소자의 제조 방법 |
US10344183B2 (en) | 2013-12-16 | 2019-07-09 | Rhodia Operations | Liquid suspension of cerium oxide particles |
BR112016020631A2 (pt) | 2014-03-07 | 2018-05-15 | Secure Natural Resources Llc | óxido de cério (iv) com excepcionais propriedades de remoção de arsênico |
JPWO2015182756A1 (ja) | 2014-05-30 | 2017-05-25 | 日立化成株式会社 | Cmp用研磨液、cmp用研磨液セット、及び研磨方法 |
KR101773543B1 (ko) | 2015-06-30 | 2017-09-01 | 유비머트리얼즈주식회사 | 연마 입자, 연마 슬러리 및 연마 입자의 제조 방법 |
CN107735471B (zh) | 2015-07-10 | 2021-02-12 | 费罗公司 | 用于抛光有机聚合物基眼用基材的浆液组合物和添加剂以及方法 |
WO2018038885A1 (en) | 2016-08-26 | 2018-03-01 | Ferro Corporation | Slurry composition and method of selective silica polishing |
CA3046659A1 (en) | 2016-12-22 | 2018-06-28 | Illumina, Inc. | Flow cell package and method for making the same |
KR102679492B1 (ko) * | 2018-11-15 | 2024-07-01 | 솔브레인 주식회사 | 연마 첨가제 조성물, 연마 슬러리 조성물 및 반도체 소자의 절연막의 연마 방법 |
CN110788698B (zh) * | 2019-10-14 | 2020-11-06 | 上海交通大学 | 基于雾化CeO2辅助轴向进给的磨削加工方法、系统、介质及设备 |
KR102453292B1 (ko) * | 2020-07-07 | 2022-10-12 | 주식회사 나노신소재 | 산화세륨 복합분말의 분산 조성물 |
US11508405B1 (en) | 2021-06-21 | 2022-11-22 | Western Digital Technologies, Inc. | Magnetic recording media with plasma-polished pre-seed layer or substrate |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08134435A (ja) * | 1994-11-07 | 1996-05-28 | Mitsui Mining & Smelting Co Ltd | 研磨材及び研磨方法 |
Family Cites Families (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE7621572U1 (de) | 1976-07-08 | 1976-10-28 | Skf Kugellagerfabriken Gmbh, 8720 Schweinfurt | Kupplungsausruecker, insbesondere fuer kraftfahrzeuge |
US4462188A (en) | 1982-06-21 | 1984-07-31 | Nalco Chemical Company | Silica sol compositions for polishing silicon wafers |
US4475981A (en) | 1983-10-28 | 1984-10-09 | Ampex Corporation | Metal polishing composition and process |
US4588421A (en) | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
FR2583034A1 (fr) * | 1985-06-10 | 1986-12-12 | Rhone Poulenc Spec Chim | Nouvel oxyde cerique, son procede de fabrication et ses applications |
FR2617154B1 (fr) * | 1987-06-29 | 1990-11-30 | Rhone Poulenc Chimie | Procede d'obtention d'oxyde cerique et oxyde cerique a nouvelles caracteristiques morphologiques |
JPH0297424A (ja) | 1988-10-04 | 1990-04-10 | Iwao Jiki Kogyo Kk | アルミナージルコニア複合粉体の製造方法 |
US4954142A (en) | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
US4959113C1 (en) | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
JP2850254B2 (ja) | 1989-09-27 | 1999-01-27 | 株式会社フジミインコーポレーテッド | 研磨剤組成物 |
JP2779041B2 (ja) | 1990-04-04 | 1998-07-23 | 株式会社ノリタケカンパニーリミテド | 酸化クロムを添加した微結晶構造アルミナ焼結研摩材及びその製法 |
JP2506503B2 (ja) | 1990-11-29 | 1996-06-12 | 東芝セラミックス株式会社 | 積層セラミック多孔体 |
CA2064977C (en) | 1991-04-05 | 1998-09-22 | Eiichi Shiraishi | Catalyst for purifying exhaust gas |
JP3183906B2 (ja) | 1991-06-25 | 2001-07-09 | 株式会社日本触媒 | ジルコニアシート |
JPH052778A (ja) | 1991-06-27 | 1993-01-08 | Canon Inc | 電鋳装置およびそれを用いたスタンパーの製造方法 |
DE4124560A1 (de) | 1991-07-24 | 1993-01-28 | Wacker Chemie Gmbh | Beschichtungsmittel zur herstellung von wasserdichten, dampfdurchlaessigen und flammverzoegernden beschichtungen |
US5264010A (en) | 1992-04-27 | 1993-11-23 | Rodel, Inc. | Compositions and methods for polishing and planarizing surfaces |
JP3335667B2 (ja) | 1992-05-26 | 2002-10-21 | 株式会社東芝 | 半導体装置の製造方法 |
JP2914860B2 (ja) | 1992-10-20 | 1999-07-05 | 株式会社東芝 | 半導体装置とその製造方法および研磨方法ならびに研磨装置および研磨装置の研磨面の再生方法 |
JPH08505175A (ja) * | 1992-12-23 | 1996-06-04 | ミネソタ・マイニング・アンド・マニュファクチュアリング・カンパニー | 酸化マンガンを含有する砥粒 |
US5525559A (en) | 1993-02-13 | 1996-06-11 | Tioxide Specialties Limited | Preparation of mixed powders |
JPH06263515A (ja) | 1993-03-15 | 1994-09-20 | Kyocera Corp | セラミック泥漿の製造方法 |
JP2832270B2 (ja) | 1993-05-18 | 1998-12-09 | 三井金属鉱業株式会社 | ガラス研磨用研磨材 |
JP3287696B2 (ja) | 1993-05-27 | 2002-06-04 | 花王株式会社 | 高濃度一液型アルカリ洗浄剤組成物およびその製造方法 |
US5389352A (en) * | 1993-07-21 | 1995-02-14 | Rodel, Inc. | Oxide particles and method for producing them |
JPH0770553A (ja) | 1993-09-01 | 1995-03-14 | Asahi Glass Co Ltd | 研磨液及び基体の研磨方法 |
JPH07116431A (ja) | 1993-10-25 | 1995-05-09 | Kikusui Kagaku Kogyo Kk | 微細気孔径を有するフィルタ |
JPH07172933A (ja) | 1993-11-01 | 1995-07-11 | Matsushita Electric Ind Co Ltd | セラミックスラリーの製造方法 |
US5489204A (en) | 1993-12-28 | 1996-02-06 | Minnesota Mining And Manufacturing Company | Apparatus for sintering abrasive grain |
JPH083541A (ja) | 1994-06-17 | 1996-01-09 | Taki Chem Co Ltd | 精密研磨剤 |
JP3509188B2 (ja) | 1994-06-22 | 2004-03-22 | ソニー株式会社 | 化学機械研磨用微粒子の製造方法及びこれを用いた研磨方法 |
JP3278532B2 (ja) | 1994-07-08 | 2002-04-30 | 株式会社東芝 | 半導体装置の製造方法 |
TW311905B (ko) * | 1994-07-11 | 1997-08-01 | Nissan Chemical Ind Ltd | |
JP3837754B2 (ja) | 1994-07-11 | 2006-10-25 | 日産化学工業株式会社 | 結晶性酸化第二セリウムの製造方法 |
JP3680367B2 (ja) | 1994-08-19 | 2005-08-10 | 株式会社日立製作所 | 配線基板 |
JP3430733B2 (ja) | 1994-09-30 | 2003-07-28 | 株式会社日立製作所 | 研磨剤及び研磨方法 |
US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
JP3576261B2 (ja) | 1995-03-29 | 2004-10-13 | 東京磁気印刷株式会社 | 分散/凝集状態を制御した遊離砥粒スラリー、その製造法及びその分散方法 |
KR960041316A (ko) * | 1995-05-22 | 1996-12-19 | 고사이 아키오 | 연마용 입상체, 이의 제조방법 및 이의 용도 |
JPH0948672A (ja) | 1995-08-02 | 1997-02-18 | Kanebo Ltd | セラミックスラリーの調製法 |
JP3359479B2 (ja) * | 1995-11-07 | 2002-12-24 | 三井金属鉱業株式会社 | 研磨材、その製造方法及び研磨方法 |
AU1670597A (en) * | 1996-02-07 | 1997-08-28 | Hitachi Chemical Company, Ltd. | Cerium oxide abrasive, semiconductor chip, semiconductor device, process for the production of them, and method for the polishing of substrates |
JPH09270402A (ja) | 1996-03-29 | 1997-10-14 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の製造法 |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
JPH10102038A (ja) | 1996-09-30 | 1998-04-21 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
CN1245471C (zh) * | 1996-09-30 | 2006-03-15 | 日立化成工业株式会社 | 氧化铈研磨剂以及基板的研磨方法 |
JP3462052B2 (ja) | 1996-09-30 | 2003-11-05 | 日立化成工業株式会社 | 酸化セリウム研磨剤および基板の研磨法 |
US5876490A (en) * | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
JPH10106994A (ja) | 1997-01-28 | 1998-04-24 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
JPH1112561A (ja) | 1997-04-28 | 1999-01-19 | Seimi Chem Co Ltd | 半導体用研磨剤および半導体用研磨剤の製造方法 |
TW365563B (en) * | 1997-04-28 | 1999-08-01 | Seimi Chem Kk | Polishing agent for semiconductor and method for its production |
EP1422277B1 (en) | 2002-11-22 | 2007-01-10 | Nippon Aerosil Co., Ltd. | High concentration silica slurry |
-
1997
- 1997-09-30 CN CNB03119818XA patent/CN1245471C/zh not_active Expired - Lifetime
- 1997-09-30 WO PCT/JP1997/003490 patent/WO1998014987A1/ja not_active Application Discontinuation
- 1997-09-30 AU AU43231/97A patent/AU4323197A/en not_active Abandoned
- 1997-09-30 EP EP07109339.7A patent/EP1833084B1/en not_active Expired - Lifetime
- 1997-09-30 CN CNB97199370XA patent/CN1282226C/zh not_active Expired - Lifetime
- 1997-09-30 EP EP09178160A patent/EP2164095A1/en not_active Withdrawn
- 1997-09-30 US US09/269,650 patent/US6221118B1/en not_active Expired - Lifetime
- 1997-09-30 KR KR1020067021503A patent/KR100761636B1/ko active IP Right Grant
- 1997-09-30 EP EP05106514A patent/EP1610367B1/en not_active Expired - Lifetime
- 1997-09-30 RU RU99109040/28A patent/RU2178599C2/ru not_active IP Right Cessation
- 1997-09-30 CA CA002263241A patent/CA2263241C/en not_active Expired - Fee Related
- 1997-09-30 KR KR1020077015361A patent/KR100775228B1/ko active IP Right Grant
- 1997-09-30 EP EP97941287A patent/EP0939431B1/en not_active Expired - Lifetime
- 1997-09-30 CN CNB031198198A patent/CN1323124C/zh not_active Expired - Fee Related
- 1997-09-30 KR KR10-1999-7002723A patent/KR100420087B1/ko not_active IP Right Cessation
- 1997-09-30 KR KR1020067021504A patent/KR100759182B1/ko active IP Right Grant
-
2001
- 2001-02-13 US US09/782,241 patent/US6863700B2/en not_active Expired - Fee Related
-
2004
- 2004-10-12 US US10/960,941 patent/US7708788B2/en not_active Expired - Fee Related
-
2006
- 2006-02-16 US US11/276,161 patent/US7867303B2/en not_active Expired - Fee Related
- 2006-02-16 US US11/276,157 patent/US20060118524A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08134435A (ja) * | 1994-11-07 | 1996-05-28 | Mitsui Mining & Smelting Co Ltd | 研磨材及び研磨方法 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100761636B1 (ko) | 산화세륨 입자 | |
KR100403719B1 (ko) | 연마제, 기판의 연마법 및 반도체 장치의 제조법 | |
JP4971731B2 (ja) | 酸化セリウムスラリーおよび基板の研磨法 | |
KR100710779B1 (ko) | 산화세륨 입자 | |
JPH10106993A (ja) | 基板の研磨法 | |
JPH11181404A (ja) | 酸化セリウム研磨剤および基板の研磨法 | |
JPH11181407A (ja) | 酸化セリウム研磨剤および基板の研磨法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A107 | Divisional application of patent | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
A107 | Divisional application of patent | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120907 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20130906 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140905 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150911 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160909 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170908 Year of fee payment: 11 |