WO2012070542A1 - スラリー、研磨液セット、研磨液、基板の研磨方法及び基板 - Google Patents
スラリー、研磨液セット、研磨液、基板の研磨方法及び基板 Download PDFInfo
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- WO2012070542A1 WO2012070542A1 PCT/JP2011/076827 JP2011076827W WO2012070542A1 WO 2012070542 A1 WO2012070542 A1 WO 2012070542A1 JP 2011076827 W JP2011076827 W JP 2011076827W WO 2012070542 A1 WO2012070542 A1 WO 2012070542A1
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- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229940094506 lauryl betaine Drugs 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 235000018977 lysine Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- DVEKCXOJTLDBFE-UHFFFAOYSA-N n-dodecyl-n,n-dimethylglycinate Chemical compound CCCCCCCCCCCC[N+](C)(C)CC([O-])=O DVEKCXOJTLDBFE-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 229940081066 picolinic acid Drugs 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000083 poly(allylamine) Polymers 0.000 description 1
- 229920005646 polycarboxylate Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical group Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- 238000001132 ultrasonic dispersion Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000001052 yellow pigment Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/12—Etching, surface-brightening or pickling compositions containing heavy metal salts in an amount of at least 50% of the non-solvent components
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Definitions
- the present invention relates to a slurry, a polishing liquid set, a polishing liquid, a method for polishing a substrate, and a substrate.
- the present invention relates to a slurry, a polishing liquid set, a polishing liquid, a method for polishing a substrate, and a substrate used in a semiconductor element manufacturing process.
- CMP Chemical Mechanical Polishing
- STI shallow trench isolation
- fumed silica-based polishing liquid is used in CMP.
- the fumed silica-based polishing liquid is produced by growing abrasive grains by a method such as thermal decomposition of tetrachlorosilicic acid and adjusting pH.
- a silica-based polishing liquid has a technical problem that the polishing rate is low.
- STI is used for element isolation in the integrated circuit.
- CMP is used to remove an excess silicon oxide film formed on a substrate.
- a stopper film having a low polishing rate is formed under the silicon oxide film.
- the stopper film a silicon nitride film, a polysilicon film, or the like is used, and it is desirable that the polishing selectivity ratio of the silicon oxide film to the stopper film (polishing speed ratio: polishing speed of the silicon oxide film / polishing speed of the stopper film) is large.
- a conventional silica-based polishing liquid such as a colloidal silica-based polishing liquid has a polishing selectivity ratio of a silicon oxide film to a stopper film as small as about 3 and tends not to have practical characteristics for STI.
- a cerium oxide-based polishing liquid containing cerium oxide particles as abrasive grains is used as a polishing liquid for glass surfaces such as photomasks and lenses.
- the cerium oxide-based polishing liquid has an advantage that the polishing rate is faster than a silica-based polishing liquid containing silica particles as abrasive grains and an alumina-based polishing liquid containing alumina particles as abrasive grains.
- a semiconductor polishing liquid using high-purity cerium oxide particles has been used as a cerium oxide-based polishing liquid (see, for example, Patent Document 1 below).
- a polishing liquid such as a cerium oxide-based polishing liquid.
- it is required to improve dispersibility of abrasive grains such as cerium oxide particles and to flatly polish a substrate having irregularities.
- the polishing selectivity of the inorganic insulating film for example, silicon oxide film
- the stopper film for example, silicon nitride film, polysilicon film, etc.
- additives may be added to the polishing liquid.
- polishing liquids using tetravalent metal element hydroxide particles have been studied (for example, see Patent Document 3 below). Further, a method for producing tetravalent metal element hydroxide particles has also been studied (for example, see Patent Document 4 below). These techniques attempt to reduce polishing scratches caused by particles by making the mechanical action as small as possible while taking advantage of the chemical action of hydroxide particles of tetravalent metal elements.
- JP-A-10-106994 Japanese Patent Application Laid-Open No. 08-022970 International Publication No. 02/067309 Pamphlet JP 2006-249129 A
- the polishing rate may decrease in exchange for the effect of adding the additive, and there is a problem that it is difficult to achieve both the polishing rate and other polishing characteristics. .
- the present invention also provides a polishing liquid set and a polishing liquid capable of polishing a film to be polished at a polishing rate superior to that of a conventional polishing liquid while maintaining the additive effect. Objective.
- an object of the present invention is to provide a polishing method using the slurry, the polishing liquid set or the polishing liquid, and a substrate obtained thereby.
- the present inventor has found that when an aqueous dispersion in which the abrasive grains are dispersed in water is centrifuged under specific conditions, it is non-volatile. It has been found that by using abrasive grains that give a liquid layer with a high content, the film to be polished can be polished at a polishing rate superior to that of conventional polishing liquids regardless of the presence or absence of additives.
- the slurry according to the present invention contains abrasive grains and water, the abrasive grains include a hydroxide of a tetravalent metal element, and the content of the abrasive grains is adjusted to 1.0 mass%.
- the aqueous dispersion is centrifuged at a centrifugal acceleration of 1.59 ⁇ 10 5 G for 50 minutes, a liquid layer having a nonvolatile content of 500 ppm or more is provided.
- the aqueous dispersion in which the content of the abrasive grains is adjusted to a predetermined amount means a liquid containing a predetermined amount of abrasive grains and water.
- ppm means mass ratio ppm, that is, “parts per million mass”.
- the polishing speed is superior to that of a conventional polishing liquid.
- the film to be polished can be polished.
- the film to be polished can be polished at a polishing rate superior to that of a conventional polishing liquid.
- the present inventor has obtained light absorption (absorbance) at a specific wavelength in an aqueous dispersion containing a specific amount of the abrasive grains. It was found that by using abrasive grains having a specific range, it is possible to polish the film to be polished at a polishing rate superior to that of conventional polishing liquids.
- the abrasive grains preferably give an absorbance of 1.50 or more with respect to light having a wavelength of 400 nm in an aqueous dispersion in which the content of the abrasive grains is adjusted to 1.0 mass%.
- the film to be polished can be polished at a polishing rate that is even better than that of conventional polishing liquids.
- the abrasive grains give an absorbance of 1.000 or more to light having a wavelength of 290 nm in an aqueous dispersion in which the content of the abrasive grains is adjusted to 0.0065 mass% (65 ppm). It is preferable.
- the film to be polished can be polished at a polishing rate that is even better than that of conventional polishing liquids.
- the abrasive grains give an absorbance of 0.010 or less with respect to light having a wavelength of 450 to 600 nm in an aqueous dispersion in which the content of the abrasive grains is adjusted to 0.0065% by mass.
- the film to be polished can be polished at a polishing rate that is even better than that of conventional polishing liquids.
- the present inventor has found that a light transmittance with respect to light of a specific wavelength in an aqueous dispersion containing a specific amount of the abrasive grains. It was found that the film to be polished can be polished at a polishing rate superior to that of conventional polishing liquids by using abrasive grains capable of increasing the hardness.
- the abrasive grains give a light transmittance of 50% / cm or more for light having a wavelength of 500 nm in an aqueous dispersion in which the content of the abrasive grains is adjusted to 1.0 mass%. It is preferable that
- the tetravalent metal element hydroxide is preferably obtained by mixing a salt of a tetravalent metal element and an alkali solution.
- particles having a very small particle diameter can be obtained as abrasive grains, so that the effect of reducing polishing scratches can be further improved.
- the tetravalent metal element is preferably tetravalent cerium.
- fine particles with high chemical activity are obtained as abrasive grains, so that the film to be polished can be polished at a higher polishing rate than conventional polishing liquids.
- the present inventor in a polishing liquid containing an additive in addition to the constituent components of the slurry, when the aqueous dispersion in which the abrasive grains are dispersed in water is centrifuged under specific conditions, it has been found that by using abrasive grains that give a high liquid layer, it is possible to suppress a decrease in the polishing rate for a film to be polished with the addition of an additive.
- the constituents of the polishing liquid are divided into the first liquid and the second liquid so that the first liquid and the second liquid are mixed to become the polishing liquid.
- the first liquid is the slurry
- the second liquid contains the additive and water.
- the additive is preferably at least one selected from a vinyl alcohol polymer and a derivative of the vinyl alcohol polymer.
- the additive coats the surface of the abrasive grains, the adhesion of the abrasive grains to the surface to be polished is suppressed, thereby improving the dispersibility of the abrasive grains and improving the stability of the polishing liquid. Can do.
- the cleanability of the surface to be polished can be improved.
- the content of the additive is preferably 0.01% by mass or more based on the total mass of the polishing liquid.
- the film to be polished can be polished at a polishing rate that is further superior to that of conventional polishing liquids while obtaining the effect of the additive.
- the polishing liquid according to the present invention contains abrasive grains, an additive, and water, the abrasive grains include a hydroxide of a tetravalent metal element, and the content of the abrasive grains is 1.0 mass. %, A liquid layer having a nonvolatile content of 500 ppm or more is obtained by centrifuging for 50 minutes at a centrifugal acceleration of 1.59 ⁇ 10 5 G.
- the film to be polished can be polished at a polishing rate superior to that of the conventional polishing liquid while maintaining the additive effect. Moreover, in the polishing liquid according to the present invention, the generation of polishing flaws on the surface to be polished can also be suppressed when the abrasive grains contain a hydroxide of a tetravalent metal element.
- the abrasive grains should give an absorbance of 1.50 or more with respect to light having a wavelength of 400 nm in an aqueous dispersion in which the content of the abrasive grains is adjusted to 1.0 mass%. preferable.
- the film to be polished can be polished at a polishing rate that is even better than that of conventional polishing liquids.
- the abrasive grains should give an absorbance of 1.000 or more for light having a wavelength of 290 nm in an aqueous dispersion in which the content of the abrasive grains is adjusted to 0.0065 mass%. preferable.
- the film to be polished can be polished at a polishing rate that is even better than that of conventional polishing liquids.
- the abrasive grains give an absorbance of 0.010 or less with respect to light having a wavelength of 450 to 600 nm in an aqueous dispersion in which the content of the abrasive grains is adjusted to 0.0065% by mass. It is preferable.
- the film to be polished can be polished at a polishing rate that is even better than that of conventional polishing liquids.
- the abrasive grains provide a light transmittance of 50% / cm or more for light having a wavelength of 500 nm in an aqueous dispersion in which the content of the abrasive grains is adjusted to 1.0 mass%. Preferably there is. In this case, compared with the conventional polishing liquid, it is possible to more easily achieve both an excellent polishing rate and an additive effect.
- the hydroxide of a tetravalent metal element is preferably obtained by mixing a salt of a tetravalent metal element and an alkali solution.
- a particle having an extremely small particle diameter can be obtained as an abrasive grain, a polishing liquid further excellent in the effect of reducing polishing scratches can be obtained.
- the tetravalent metal element is preferably tetravalent cerium.
- fine particles with high chemical activity are obtained as abrasive grains, so that the film to be polished can be polished at a higher polishing rate than conventional polishing liquids.
- the additive is preferably at least one selected from a vinyl alcohol polymer and a derivative of the vinyl alcohol polymer.
- the additive coats the surface of the abrasive grains, the adhesion of the abrasive grains to the surface to be polished is suppressed, thereby improving the dispersibility of the abrasive grains and improving the stability of the polishing liquid. Can do.
- the cleanability of the surface to be polished can be improved.
- the content of the additive is preferably 0.01% by mass or more based on the total mass of the polishing liquid.
- the film to be polished can be polished at a polishing rate that is further superior to that of conventional polishing liquids while obtaining the effect of the additive.
- the present invention also provides a method for polishing a substrate using the slurry, the polishing liquid set or the polishing liquid. According to these polishing methods, the film to be polished can be polished at a polishing rate superior to that of the conventional polishing method. Also, according to these polishing methods, it is possible to suppress the generation of polishing flaws and to obtain a substrate having excellent flatness.
- the first embodiment of the polishing method according to the present invention relates to a polishing method using the slurry. That is, in the polishing method according to the first embodiment, the slurry is disposed between the polishing pad and the polishing target film, the step of disposing the polishing target film of the substrate having the polishing target film on the surface so as to face the polishing pad. And polishing at least a part of the film to be polished.
- the second and third embodiments of the polishing method according to the present invention relate to a polishing method using the polishing liquid set. According to such a polishing method, problems such as agglomeration of abrasive grains and change in polishing characteristics, which are a concern when the additive is mixed and stored for a long time, can also be avoided.
- the polishing method according to the second embodiment includes a step of disposing the polishing target film of the substrate having a polishing target film on the surface so as to face the polishing pad, and the first liquid and the second liquid in the polishing liquid set. And a step of polishing at least a part of the film to be polished while supplying the polishing liquid between the polishing pad and the film to be polished.
- the polishing method according to the third embodiment includes a step of arranging a film to be polished on a substrate having a film to be polished on the surface so as to face a polishing pad, and a first liquid and a second liquid in the polishing liquid set. And polishing each of the film to be polished between the polishing pad and the film to be polished.
- the fourth embodiment of the polishing method according to the present invention relates to a polishing method using the polishing liquid. That is, the polishing method according to the fourth embodiment includes a step of disposing the film to be polished on a substrate having a film to be polished on the surface so as to face the polishing pad, and the polishing between the polishing pad and the film to be polished. Polishing at least part of the film to be polished while supplying the liquid.
- the film to be polished preferably contains silicon oxide.
- the surface of the film to be polished preferably has irregularities. According to these polishing methods, the features of the polishing liquid can be fully utilized.
- the substrate according to the present invention is polished by the polishing method.
- the film to be polished can be polished at a polishing rate superior to that of the conventional polishing liquid. Further, according to the slurry according to the present invention, it is possible to obtain a polishing liquid capable of polishing a film to be polished at a polishing rate superior to that of a conventional polishing liquid while maintaining the additive addition effect. Moreover, according to the polishing liquid set and polishing liquid which concern on this invention, a to-be-polished film
- desired characteristics for example, flatness and selectivity
- the polishing liquid according to this embodiment contains at least abrasive grains, additives, and water.
- abrasive grains for abrasive sands.
- additives for abrasive sands.
- water for sands.
- the abrasive grains are characterized by containing a hydroxide of a tetravalent metal element.
- the tetravalent metal element is preferably a rare earth element. Among them, scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, gadolinium, terbium, dysprosium, holmium, erbium are easy to form a hydroxide suitable for polishing. More preferred is at least one selected from thulium, ytterbium and lutetium.
- the tetravalent metal element is more preferably cerium from the viewpoint of easy availability and further excellent polishing rate.
- the abrasive grains are preferably composed of a hydroxide of a tetravalent metal element, and more preferably composed of a hydroxide of tetravalent cerium in terms of high chemical activity and further excellent polishing rate.
- the polishing liquid which concerns on this embodiment can use together another kind of abrasive grain in the range which does not impair the characteristic of the abrasive grain containing the hydroxide of a tetravalent metal element.
- abrasive grains such as silica, alumina, and zirconia can be used.
- the content of the tetravalent metal element hydroxide in the abrasive grains is preferably 50% by mass or more, more preferably 60% by mass or more, still more preferably 70% by mass or more, and more preferably 80% by mass or more based on the total mass of the abrasive grains. Is particularly preferable, and 90% by mass or more is extremely preferable.
- the content of the hydroxide of the tetravalent metal element is preferably 0.01% by mass or more based on the total mass of the polishing liquid in that the function of the hydroxide of the tetravalent metal element can be sufficiently expressed. 0.05 mass% or more is more preferable, and 0.1 mass% or more is still more preferable.
- the content of the hydroxide of the tetravalent metal element is preferably 8% by mass or less, more preferably 5% by mass or less, based on the total mass of the polishing liquid, from the viewpoint that it is easy to avoid agglomeration of abrasive grains.
- the content of the abrasive grains is not particularly limited, but it is easy to avoid agglomeration of the abrasive grains, and the abrasive grains can effectively act on the surface to be polished so that polishing can proceed smoothly.
- the content is preferably 0.01 to 10% by mass, more preferably 0.1 to 5% by mass based on the total mass of the polishing liquid.
- the average secondary particle diameter of the abrasive grains (hereinafter referred to as “average particle diameter” unless otherwise specified) is preferably 1 to 200 nm from the viewpoint of obtaining a further excellent polishing rate.
- the average particle size the smaller the average particle size to some extent, the specific surface area of the abrasive grains in contact with the surface to be polished is increased, and thereby the polishing rate can be further improved.
- the following is more preferable, 80 nm or less is particularly preferable, and 50 nm or less is very preferable.
- the average particle size is preferably 2 nm or more, and more preferably 5 nm or more, in that the average particle size is somewhat large so that the polishing rate tends to be improved.
- the average particle diameter of the abrasive grains can be measured with a particle size distribution meter based on the photon correlation method, and specifically, for example, it can be measured with a device name manufactured by Malvern: Zetasizer 3000HS, a device name manufactured by Beckman Coulter, Inc .: N5, etc. .
- the measuring method using the Zetasizer 3000HS is, for example, preparing an aqueous dispersion in which the content of abrasive grains is adjusted to 0.2% by mass, and about 4 mL (about 4 mL) of this aqueous dispersion in a 1 cm square cell.
- L represents “liter” (the same applies hereinafter), and a cell is installed in the apparatus.
- the average particle diameter of the abrasive grains can be obtained as a value displayed as Z-average Size.
- the abrasive grains are considered to contain large particles having a particle size that can be measured with a particle size distribution meter and fine particles having a particle size that cannot be measured with a particle size distribution meter.
- an aqueous dispersion in which such abrasive grains are dispersed in water is centrifuged by applying a sufficient centrifugal force, the aqueous dispersion is mainly subjected to solid-liquid separation into a sediment and a supernatant (liquid layer), It is considered that large particles settle as sediment and fine particles float in the supernatant.
- the present inventor has obtained a supernatant liquid having a high nonvolatile content when an aqueous dispersion containing a sufficient amount of abrasive grains is centrifuged under conditions that allow a centrifugal force to suitably separate large particles and fine particles. It has been found that by using abrasive grains that give a polishing film, the film to be polished can be polished at a polishing rate superior to that of conventional polishing liquids.
- the abrasive has a non-volatile content of 500 ppm when an aqueous dispersion prepared by adjusting the content of the abrasive to 1.0 mass% is centrifuged at a centrifugal acceleration of 1.59 ⁇ 10 5 G for 50 minutes. The above supernatant liquid is given.
- the present inventor considers the reason why an effect of improving the polishing rate can be obtained when the non-volatile content in the supernatant after centrifugation is high.
- a large non-volatile content means that the proportion of fine particles is large, and it is considered that as the non-volatile content increases, the surface area of the abrasive grains in contact with the surface to be polished increases. Thereby, the progress of polishing by chemical action is promoted, and it is considered that the polishing rate is improved as compared with the conventional case.
- the non-volatile content of the supernatant is preferably 1000 ppm or more, more preferably 1500 ppm or more, further preferably 2000 ppm or more, and particularly preferably 3000 ppm or more, in that a further excellent polishing rate can be obtained.
- the upper limit of the non-volatile content of the supernatant is not particularly limited from the viewpoint of the above reason, but is, for example, 100,000 ppm.
- an angle rotor in which tubes are arranged at a predetermined angle, or a swing rotor in which the angle of the tube is variable and the tubes are horizontal or almost horizontal during centrifugation should be used. Can do.
- FIG. 1 is a schematic cross-sectional view showing an example of an angle rotor.
- the angle rotor 1 is bilaterally symmetric about the rotation axis A1, and in FIG. 1, only one side (left side in the figure) is shown, and the other side (right side in the figure) is omitted.
- A2 is a tube angle
- Rmin is a minimum radius from the rotation axis A1 to the tube
- Rmax is a maximum radius from the rotation axis A1 to the tube
- R av is the average radius from the rotational axis A1 to the tube is determined as "(R min + R max) / 2 ".
- centrifugal acceleration [unit: G] can be obtained from the following formula (1).
- Centrifugal acceleration [G] 1118 ⁇ R ⁇ N 2 ⁇ 10 ⁇ 8 (1)
- R represents the radius of rotation (cm)
- the rotation speed N is set so that the centrifugal acceleration becomes 1.59 ⁇ 10 5 G. Centrifuge.
- the minimum radius R min , the maximum radius R max , and the average radius R av are obtained from the tube state during the centrifugation, and the conditions are set. .
- the abrasive grains can be separated into large particles and fine particles using, for example, an ultracentrifuge 70P-72 manufactured by Hitachi Koki Co., Ltd. as an angle rotor.
- the centrifugation of the aqueous dispersion using 70P-72 can be performed, for example, as follows. First, an aqueous dispersion in which the content of abrasive grains is adjusted to 1.0 mass% is prepared, and after filling this into a centrifuge tube (tube), the centrifuge tube is installed in a rotor. Then, after rotating for 50 minutes at a rotational speed of 50000 rpm, the centrifuge tube is taken out from the rotor, and the supernatant liquid in the centrifuge tube is collected. The non-volatile content of the supernatant can be calculated by measuring the mass of the collected supernatant and the mass of the residue after drying the supernatant.
- the abrasive grains preferably satisfy at least one of the following conditions (a) and (b).
- the present inventor polishes a film to be polished at a polishing rate that is further superior to conventional polishing liquids by using abrasive grains that satisfy the above-described conditions regarding the absorbance of light having a wavelength of 290 nm or wavelength of 400 nm. I found out that I can. Further, the present inventor has found that the polishing liquid and the slurry satisfying the above conditions are slightly yellowish visually, and that the polishing rate is further improved as the yellowishness of the polishing liquid and the slurry becomes darker.
- the use of abrasive grains that give an absorbance of 1.50 or more with respect to light having a wavelength of 400 nm in an aqueous dispersion in which the content of abrasive grains is adjusted to 1.0 mass% has an effect of improving the polishing rate.
- the reason why it is obtained is not necessarily clear, but the present inventor thinks as follows. That is, the tetravalent metal (M 4+ ), three hydroxyl groups (OH ⁇ ), and one anion (X ⁇ ) depending on the production conditions of the hydroxide of the tetravalent metal element (M (OH) 4 ). It is considered that M (OH) 3 X particles consisting of are produced as part of the abrasive grains.
- M (OH) 3 X the electron-withdrawing anion (X ⁇ ) acts to improve the hydroxyl reactivity, and the polishing rate increases as the amount of M (OH) 3 X increases. It is thought to do. Since the M (OH) 3 X particles absorb light having a wavelength of 400 nm, the polishing rate is improved as the abundance of M (OH) 3 X increases and the absorbance to light having a wavelength of 400 nm increases. It is considered a thing.
- the absorption peak at a wavelength of 400 nm of M (OH) 3 X is much smaller than the absorption peak at a wavelength of 290 nm.
- the present inventor examined the magnitude of the absorbance using an aqueous dispersion having an abrasive content of 1.0% by mass, which has a relatively large abrasive content and a large absorbance that is easily detected. It has been found that when an abrasive that gives an absorbance of 1.50 or more with respect to light having a wavelength of 400 nm is used in an aqueous dispersion, the effect of improving the polishing rate is excellent.
- the light absorbency with respect to the light of wavelength 400nm originates in an abrasive grain as above-mentioned, it replaces with the abrasive grain which gives the light absorbency 1.50 or more with respect to the light of wavelength 400nm, and with respect to the light of wavelength 400nm. It goes without saying that a polishing film containing a substance giving an absorbance of 1.50 or more (for example, a yellow pigment component) cannot polish a film to be polished at an excellent polishing rate.
- the absorbance with respect to light having a wavelength of 400 nm is more preferably 2.00 or more, further preferably 2.50 or more, and particularly preferably 3.00 or more, from the viewpoint that the film to be polished can be polished at a further excellent polishing rate.
- the upper limit of absorbance for light having a wavelength of 400 nm is not particularly limited, but is preferably 10.0, for example.
- the effect of improving the polishing rate can be obtained by using abrasive grains that give an absorbance of 1.000 or more with respect to light having a wavelength of 290 nm in an aqueous dispersion in which the content of abrasive grains is adjusted to 0.0065% by mass.
- abrasive grains that give an absorbance of 1.000 or more with respect to light having a wavelength of 290 nm in an aqueous dispersion in which the content of abrasive grains is adjusted to 0.0065% by mass.
- M (OH) 3 X particles produced according to the production conditions and the like of the tetravalent metal element hydroxide (M (OH) 4 ) have an absorption peak in the vicinity of a wavelength of 290 nm in calculation.
- particles made of Ce 4+ (OH ⁇ ) 3 NO 3 ⁇ have an absorption peak at a wavelength of 290 nm. Therefore, it is considered that the polishing rate is improved as the abundance of M (OH) 3 X increases and the absorbance with respect to light having a wavelength of 290 nm increases.
- the absorbance with respect to light having a wavelength near 290 nm tends to be detected as it exceeds the measurement limit.
- the present inventors have examined the magnitude of absorbance using an aqueous dispersion having an abrasive content of 0.0065% by mass with a relatively low abrasive content and a low absorbance that is easily detected. It has been found that when an abrasive that gives an absorbance of 1.000 or more with respect to light having a wavelength of 290 nm is used in the aqueous dispersion, the effect of improving the polishing rate is excellent.
- the present inventors show that the higher the absorbance of the abrasive with respect to the light near the wavelength of 290 nm, the higher the absorbance of the abrasive grains becomes, in addition to the light near the wavelength of 400 nm where the light-absorbing material tends to be yellow when absorbed by the light-absorbing material. It has been found that the yellowness of the polishing liquid and slurry using various abrasive grains increases. That is, as shown in FIG. 6 to be described later, the present inventor absorbs light with a wavelength of 290 nm in an aqueous dispersion having an abrasive content of 0.0065% by mass and an aqueous dispersion having an abrasive content of 1.0% by mass. It was found that the absorbance with respect to light having a wavelength of 400 nm in the liquid correlates very well.
- Absorbance with respect to light having a wavelength of 290 nm is more preferably 1.050 or more, further preferably 1.100 or more, and particularly preferably 1.200 or more, from the viewpoint that the film to be polished can be polished at a further excellent polishing rate. 1.300 or more is very preferable.
- the upper limit of absorbance for light having a wavelength of 290 nm is not particularly limited, but is preferably 10.00, for example.
- the abrasive grains have a wavelength of 400 nm in an aqueous dispersion in which the abrasive grain content is adjusted to 1.0 mass%. It is preferable to give an absorbance of 1.50 or more to light and to give an absorbance of 1.000 or more to light having a wavelength of 290 nm in an aqueous dispersion in which the abrasive content is adjusted to 0.0065% by mass.
- the metal hydroxides (M (OH) 4 and M (OH) 3 X) tend not to absorb light with a wavelength of 450 nm or more, particularly 450 to 600 nm. Therefore, from the viewpoint of suppressing the adverse effect on polishing due to the inclusion of impurities, the abrasive is used in an aqueous dispersion in which the content of the abrasive is adjusted to 0.0065% by mass (65 ppm). It is preferable to provide an absorbance of 0.010 or less for 600 nm light.
- the absorbance with respect to all light in the wavelength range of 450 to 600 nm does not exceed 0.010 in the aqueous dispersion in which the content of the abrasive grains is adjusted to 0.0065% by mass.
- the absorbance with respect to light having a wavelength of 450 to 600 nm is more preferably 0.005 or less, and still more preferably 0.001 or less.
- the lower limit of the absorbance with respect to light having a wavelength of 450 to 600 nm is preferably 0.
- the absorbance in the aqueous dispersion can be measured using, for example, a spectrophotometer (device name: U3310) manufactured by Hitachi, Ltd. Specifically, for example, an aqueous dispersion in which the content of abrasive grains is adjusted to 0.0065% by mass or 1.0% by mass is prepared as a measurement sample. About 4 mL of this measurement sample is put into a 1 cm square cell, and the cell is set in the apparatus. Next, the absorbance is measured in the wavelength range of 200 to 600 nm, and the absorbance is judged from the obtained chart.
- a spectrophotometer device name: U3310
- the absorbance of light having a wavelength of 290 nm was measured by excessively diluting the content of abrasive grains contained in the measurement sample to be less than 0.0065% by mass, the absorbance appeared to be 1.000 or more. If present, it is clear that the absorbance is 1.000 or more even when the content of the abrasive grains is 0.0065% by mass. Therefore, the absorbance may be screened by measuring the absorbance using an aqueous dispersion excessively diluted so that the content of abrasive grains is less than 0.0065% by mass.
- the absorbance of light having a wavelength of 400 nm is measured by excessively diluting so that the content of abrasive grains is less than 1.0% by mass
- the absorbance may be screened on the assumption that the absorbance is 1.50 or more.
- the absorbance is 0.010 or less when the absorbance is measured with respect to light having a wavelength of 450 to 600 nm after dilution so that the content of the abrasive is greater than 0.0065% by mass
- the abrasive The absorbance may be screened assuming that the absorbance is 0.010 or less even when the content of A is 0.0065% by mass.
- the polishing liquid according to this embodiment preferably has high transparency to visible light (transparent or nearly transparent by visual observation).
- the abrasive contained in the polishing liquid according to the present embodiment has a light transmittance of 50% with respect to light having a wavelength of 500 nm in an aqueous dispersion in which the content of the abrasive is adjusted to 1.0 mass%. / Cm or more is preferable.
- the light transmittance is more preferably 60% / cm or more, further preferably 70% / cm or more, particularly preferably 80% / cm or more, and extremely preferably 90% / cm or more.
- the upper limit of the light transmittance is 100% / cm.
- the abrasive grains present in the aqueous dispersion are particles having a large particle diameter (hereinafter referred to as “coarse particles”). It is considered that there are relatively many.
- an additive for example, polyvinyl alcohol (PVA)
- PVA polyvinyl alcohol
- the number of abrasive grains acting on the surface to be polished per unit area (the number of effective abrasive grains) is reduced, and the specific surface area of the abrasive grains in contact with the surface to be polished is reduced. Conceivable.
- the number of abrasive grains (number of effective abrasive grains) acting on the surface to be polished per unit area is maintained, and the specific surface area of the abrasive grains in contact with the surface to be polished is maintained. It is considered to be.
- the light transmittance is a transmittance for light having a wavelength of 500 nm.
- the light transmittance is measured with a spectrophotometer. Specifically, for example, it is measured with a spectrophotometer U3310 (device name) manufactured by Hitachi, Ltd.
- an aqueous dispersion in which the content of abrasive grains is adjusted to 1.0% by mass is prepared as a measurement sample. About 4 mL of this measurement sample is put into a 1 cm square cell, and the cell is set in the apparatus to perform measurement.
- the content of the abrasive grains is 50% / cm or more in an aqueous dispersion having a content of greater than 1.0% by mass
- the light transmittance is also obtained when this is diluted to 1.0% by mass. Is apparently 50% / cm or more. Therefore, the light transmittance can be screened by a simple method by using an aqueous dispersion having an abrasive content greater than 1.0% by mass.
- the hydroxide of a tetravalent metal element is preferably prepared by mixing a salt of a tetravalent metal element (metal salt) and an alkali solution. Thereby, particles having an extremely fine particle diameter can be obtained, and a polishing liquid further excellent in the effect of reducing polishing scratches can be obtained.
- a method is disclosed in Patent Document 4, for example.
- a hydroxide of a tetravalent metal element can be obtained by mixing an aqueous solution of a salt of a tetravalent metal element and an alkali solution.
- M (SO 4 ) 2 M (NH 4 ) 2 (NO 3 ) 6 , M (NH 4 ) 4 (SO 4 ) 4, etc.
- M (SO 4 ) 2 M (NH 4 ) 2 (NO 3 ) 6
- M (NH 4 ) 4 (SO 4 ) 4 etc.
- a means for adjusting the absorbance and light transmittance optimization of a method for producing a hydroxide of a tetravalent metal element can be mentioned.
- Specific examples of the method for changing the absorbance to light having a wavelength of 400 nm or 290 nm include, for example, selection of a base contained in an alkali solution, adjustment of a raw material concentration in an aqueous solution of a metal salt and an alkaline solution, and an aqueous solution of a metal salt. Adjustment of the mixing speed with an alkaline solution is mentioned.
- a method for changing the light transmittance with respect to light having a wavelength of 500 nm specifically, for example, adjustment of the raw material concentration in the aqueous solution of the metal salt and the alkali solution, adjustment of the mixing speed of the aqueous solution of the metal salt and the alkaline solution Adjustment of the stirring speed at the time of mixing, adjustment of the liquid temperature at the time of mixing, etc. are mentioned.
- the method for producing a hydroxide of a tetravalent metal element should be made more gradual. Is preferred.
- a method for controlling absorbance and light transmittance will be described in more detail.
- the base used as the alkali source in the alkaline liquid is not particularly limited. Specifically, for example, ammonia, triethylamine, pyridine, piperidine, pyrrolidine, imidazole, chitosan and other organic bases, hydroxylated Examples thereof include inorganic bases such as potassium and sodium hydroxide. These bases can be used alone or in combination of two or more.
- an alkaline solution showing weak basicity As the alkaline solution.
- the bases nitrogen-containing heterocyclic organic bases are preferable, pyridine, piperidine, pyrrolidine, and imidazole are more preferable, and pyridine and imidazole are still more preferable.
- the absorbance with respect to light having a wavelength of 400 nm or 290 nm and the light transmittance with respect to light having a wavelength of 500 nm can be changed.
- the absorbance and light transmittance tend to increase by reducing the progress of the reaction between acid and alkali per unit time.
- the absorbance and light can be increased by increasing the concentration of the aqueous solution of the metal salt.
- the transmittance tends to increase, and the absorbance and light transmittance tend to increase by decreasing the concentration of the alkaline solution.
- the metal salt concentration of the tetravalent metal element salt in the aqueous metal salt solution is preferably 0.010 mol / L or more, based on the entire aqueous metal salt solution, from the viewpoint of gradual increase in pH. L or more is more preferable, and 0.030 mol / L or more is still more preferable.
- the upper limit of the metal salt concentration of the salt of the tetravalent metal element is not particularly limited, but is preferably 1.000 mol / L or less based on the total amount of the metal salt aqueous solution from the viewpoint of ease of handling.
- the alkali concentration in the alkali solution is preferably 15.0 mol / L or less, more preferably 12.0 mol / L or less, and more preferably 10.0 mol / L or less, based on the whole alkali solution, from the viewpoint of gradual increase in pH. Is more preferable.
- the lower limit of the alkaline solution is not particularly limited, but from the viewpoint of productivity, 0.001 mol / L or more is preferable based on the entire alkaline solution.
- the alkali concentration in the alkali solution is appropriately adjusted according to the selected alkali species.
- the alkali concentration is preferably 0.1 mol / L or less and 0.05 mol / L or less on the basis of the entire alkali solution from the viewpoint of gradual increase in pH. More preferred is 0.01 mol / L or less.
- the lower limit of the alkaline solution is not particularly limited, but from the viewpoint of productivity, 0.001 mol / L or more is preferable based on the entire alkaline solution.
- the alkali concentration is preferably 1.0 mol / L or less, and preferably 0.5 mol / L or less, based on the entire alkali solution, from the viewpoint of gradual increase in pH. More preferred is 0.1 mol / L or less.
- the lower limit of the alkaline liquid is not particularly limited, but from the viewpoint of productivity, 0.01 mol / L or more is preferable based on the whole alkaline liquid.
- the alkali concentration is preferably 15.0 mol / L or less, more preferably 10.0 mol / L or less, based on the entire alkali solution, from the viewpoint of gradual increase in pH. 5.0 mol / L or less is more preferable.
- the lower limit of the alkaline liquid is not particularly limited, but is preferably 0.1 mol / L or more based on the whole alkaline liquid from the viewpoint of productivity.
- alkalis in the respective pKa ranges include, for example, 1,8-diazabicyclo [5.4.0] undec-7-ene (pKa: 25) as an alkali having a pKa of 20 or more.
- alkali having 12 or more and less than 20 include potassium hydroxide (pKa: 16) and sodium hydroxide (pKa: 13).
- Examples of the alkali having a pKa of less than 12 include ammonia (pKa: 9) and imidazole (pKa). : 7).
- the restriction of the pKa value of the alkali to be used is not particularly limited by appropriately adjusting the concentration.
- the absorbance with respect to light having a wavelength of 400 nm or 290 nm and the light transmittance with respect to light having a wavelength of 500 nm can be changed. Specifically, the absorbance tends to increase by increasing the mixing speed, and the absorbance tends to decrease by decreasing the mixing speed. Further, increasing the mixing speed tends to increase the light transmittance for light having a wavelength of 500 nm, and decreasing the mixing speed tends to decrease the light transmittance.
- the lower limit of the mixing speed is not particularly limited in terms of absorbance and light transmittance, but is preferably 0.1 ml / min or more from the viewpoint of shortening the mixing time and improving efficiency. Further, the upper limit of the mixing speed is preferably 100 ml / min or less from the viewpoint of suppressing a rapid reaction. However, the mixing speed is preferably determined by the raw material concentration. Specifically, for example, when the raw material concentration is high, it is preferable to reduce the mixing speed.
- the light transmittance with respect to light having a wavelength of 500 nm can be changed by controlling the stirring speed when the aqueous metal salt solution and the alkali solution are mixed. Specifically, increasing the stirring speed tends to increase the light transmittance, and decreasing the stirring speed tends to decrease the light transmittance.
- the rotation speed of the stirring blade is preferably 50 to 1000 rpm.
- the upper limit of the rotation speed is preferably 1000 rpm or less, more preferably 800 rpm or less, and even more preferably 500 rpm or less in terms of suppressing the liquid level from rising excessively.
- the light transmittance with respect to light having a wavelength of 500 nm can be changed by controlling the liquid temperature when the aqueous metal salt solution and the alkali liquid are mixed. Specifically, the light transmittance tends to increase by lowering the liquid temperature, and the light transmittance tends to decrease by increasing the liquid temperature.
- the liquid temperature is preferably such that the temperature in the reaction system, which can be read by installing a thermometer in the reaction system, falls within the range of 0 to 60 ° C.
- the upper limit of the liquid temperature is preferably 60 ° C. or less, more preferably 50 ° C. or less, still more preferably 40 ° C. or less, particularly preferably 30 ° C. or less, and extremely preferably 25 ° C. or less in terms of suppressing rapid reaction.
- the lower limit of the liquid temperature is preferably 0 ° C. or higher, more preferably 5 ° C. or higher, further preferably 10 ° C. or higher, particularly preferably 15 ° C. or higher, and extremely preferably 20 ° C. or higher from the viewpoint of allowing the reaction to proceed easily.
- a constant synthesis temperature T for example, a temperature range of synthesis temperature T ⁇ 3 ° C.
- the method for adjusting the synthesis temperature is not particularly limited.
- a container containing one of an aqueous solution of metal salt or an alkali solution is placed in a water tank filled with water, and the water temperature of the water tank is set to the external circulation device COOLNICS circulator.
- COOLNICS circulator There is a method of mixing an aqueous solution of a metal salt and an alkaline solution while adjusting with (product of EYELA, product name cooling thermopump CTP101).
- the tetravalent metal element hydroxide produced as described above may contain impurities, but the impurities can be removed by, for example, a method of repeating solid-liquid separation by centrifugation or the like. Thereby, the absorbance with respect to light having a wavelength of 450 to 600 nm can be adjusted.
- the polishing liquid according to this embodiment can obtain a particularly excellent polishing rate for an inorganic insulating film (for example, a silicon oxide film), and thus is particularly suitable for use in polishing a substrate having an inorganic insulating film.
- an inorganic insulating film for example, a silicon oxide film
- the polishing rate and the polishing characteristics other than the polishing rate can be made highly compatible.
- the additive examples include a dispersant that increases the dispersibility of abrasive grains, a polishing rate improver that improves the polishing rate, a flattening agent (a flattening agent that reduces irregularities on the surface to be polished after polishing, Known additives such as a global planarizing agent for improving global planarity) and a selective ratio improver for improving the polishing selectivity of an inorganic insulating film to a stopper film such as a silicon nitride film or a polysilicon film are used without particular limitation. be able to.
- Examples of the dispersant include vinyl alcohol polymer and derivatives thereof, betaine, lauryl betaine, lauryl dimethylamine oxide, and the like.
- Examples of the polishing rate improver include ⁇ -alanine betaine and stearyl betaine.
- Examples of the flattening agent that reduces the unevenness of the surface to be polished include ammonium lauryl sulfate, polyoxyethylene alkyl ether sulfate triethanolamine, and the like.
- Examples of the global leveling agent include polyvinyl pyrrolidone and polyacrolein.
- Examples of the selectivity improver include polyethyleneimine, polyallylamine, and chitosan. These can be used alone or in combination of two or more.
- the polishing liquid according to this embodiment preferably contains a vinyl alcohol polymer and derivatives thereof as additives.
- vinyl alcohol which is a monomer of polyvinyl alcohol
- polyvinyl alcohol is generally obtained by polymerizing a vinyl carboxylate monomer such as a vinyl acetate monomer to obtain vinyl polycarboxylate and then saponifying (hydrolyzing) it. Therefore, for example, a vinyl alcohol polymer obtained using a vinyl acetate monomer as a raw material has —OCOCH 3 and hydrolyzed —OH as functional groups in the molecule, and becomes —OH. Ratio is defined as the degree of saponification.
- a vinyl alcohol polymer whose saponification degree is not 100% has a structure substantially like a copolymer of vinyl acetate and vinyl alcohol.
- all or part of a portion derived from a vinyl carboxylate monomer by copolymerizing a vinyl carboxylate monomer such as a vinyl acetate monomer and another vinyl group-containing monomer (for example, ethylene, propylene, styrene, vinyl chloride, etc.) Saponification may be used.
- these are generically defined as “vinyl alcohol polymer”
- “vinyl alcohol polymer” is ideally a polymer having the following structural formula. (Where n represents a positive integer)
- “Derivatives” of vinyl alcohol polymers include derivatives of vinyl alcohol homopolymers (ie, polymers having a saponification degree of 100%), and vinyl alcohol monomers and other vinyl group-containing monomers (eg, ethylene, propylene, styrene, Vinyl chloride and the like) and derivatives of copolymers.
- Examples of the derivative include those in which a part of the hydroxyl group of the polymer is substituted with, for example, an amino group, a carboxyl group, an ester group, and the like, and a part of the polymer in which a hydroxyl group is modified.
- Such derivatives include reactive polyvinyl alcohol (for example, manufactured by Nippon Synthetic Chemical Industry Co., Ltd., GOHSEFIMAR (registered trademark) Z, etc.), cationized polyvinyl alcohol (for example, manufactured by Nippon Synthetic Chemical Industry Co., Ltd., Goseifamer (registered trademark) K, etc.), anionized polyvinyl alcohol (for example, Goseiran (registered trademark) L, Gosenal (registered trademark) T, etc., manufactured by Nippon Synthetic Chemical Industry Co., Ltd.), hydrophilic group-modified polyvinyl alcohol (for example, Nippon Synthetic Chemical Industry Co., Ltd., Ecomaty, etc.).
- reactive polyvinyl alcohol for example, manufactured by Nippon Synthetic Chemical Industry Co., Ltd., GOHSEFIMAR (registered trademark) Z, etc.
- cationized polyvinyl alcohol for example, manufactured by Nippon Synthetic Chemical Industry Co., Ltd., Goseif
- the vinyl alcohol polymer and its derivatives function as abrasive dispersants and have the effect of improving the stability of the polishing liquid.
- the hydroxyl group of the vinyl alcohol polymer and its derivatives interacts with the hydroxide particles of the tetravalent metal element, thereby suppressing the aggregation of abrasive grains and suppressing the change in the grain size of the abrasive grains in the polishing liquid. Can be improved.
- the vinyl alcohol polymer and its derivatives are used in combination with a hydroxide particle of a tetravalent metal element, so that an inorganic insulating film (for example, a silicon oxide film) for a stopper film (for example, a silicon nitride film, a polysilicon film, etc.) is used.
- an inorganic insulating film for example, a silicon oxide film
- a stopper film for example, a silicon nitride film, a polysilicon film, etc.
- Polishing selectivity inorganic insulating film polishing rate / stopper film polishing rate
- the vinyl alcohol polymer and derivatives thereof can improve the flatness of the polished surface after polishing, and can prevent the adhesion of abrasive grains to the polished surface (improve the cleaning properties).
- the saponification degree of the vinyl alcohol polymer is preferably 95 mol% or less in that the polishing selectivity of the inorganic insulating film to the stopper film can be further increased. From the same viewpoint, the saponification degree is more preferably 90 mol% or less, still more preferably 88 mol% or less, particularly preferably 85 mol% or less, extremely preferably 83 mol% or less, and very preferably 80 mol% or less.
- the lower limit of the degree of saponification is not particularly limited, but is preferably 50 mol% or more, more preferably 60 mol% or more, and still more preferably 70 mol% or more from the viewpoint of excellent solubility in water.
- the saponification degree of the vinyl alcohol polymer can be measured according to JIS K 6726 (polyvinyl alcohol test method).
- the upper limit of the average degree of polymerization (weight average molecular weight) of the vinyl alcohol polymer is not particularly limited, but is preferably 3000 or less from the viewpoint of further suppressing the decrease in the polishing rate of the inorganic insulating film (for example, silicon oxide film). 2000 or less is more preferable, and 1000 or less is more preferable.
- the lower limit of the average polymerization degree is preferably 50 or more, more preferably 100 or more, and further preferably 150 or more.
- the average degree of polymerization of the vinyl alcohol polymer can be measured according to JIS K 6726 (polyvinyl alcohol test method).
- the vinyl alcohol polymer and derivatives thereof include a plurality of weights having different saponification degrees and average polymerization degrees for the purpose of adjusting the polishing selectivity of the inorganic insulating film relative to the stopper film and the flatness of the substrate after polishing. Combinations may be used in combination.
- the saponification degree of at least one vinyl alcohol polymer and its derivative is preferably 95 mol% or less, and from the viewpoint of further improving the polishing selectivity, the average calculated from the respective saponification degree and blending ratio More preferably, the saponification degree is 95 mol% or less.
- the preferable range of the degree of saponification is the same as that described above.
- the content of the additive is preferably 0.01% by mass or more, more preferably 0.1% by mass or more, more preferably 1.0% by mass based on the total mass of the polishing liquid from the viewpoint of more effectively obtaining the effect of the additive. % Or more is more preferable. Further, the content of the additive is preferably 10% by mass or less, more preferably 5.0% by mass or less, more preferably 3.0% by mass or less, based on the total mass of the polishing liquid, from the viewpoint of further suppressing the decrease in the polishing rate of the inorganic insulating film. A mass% or less is more preferable.
- water Although there is no restriction
- the water content is not particularly limited, and may be the remainder of the polishing liquid excluding the content of other components.
- the method for dispersing the abrasive grains in water is not particularly limited, and specifically, for example, a dispersion method using stirring, a homogenizer, an ultrasonic disperser, a wet ball mill, or the like can be used.
- the pH of the polishing liquid is such that the relationship of the surface potential of the abrasive grains to the surface potential of the surface to be polished becomes good, and the abrasive grains easily act on the surface to be polished.
- 2.0 to 9.0 is preferable.
- the lower limit of the pH is preferably 2.0 or more and more preferably 4.0 or more in that the pH of the polishing liquid is stabilized and problems such as aggregation of abrasive grains due to the addition of a pH stabilizer are less likely to occur.
- 5.0 or more is more preferable.
- 9.0 or less is preferable, 7.5 or less is more preferable, and 6.5 or less is still more preferable at the point from which the dispersibility of an abrasive grain is excellent and the further outstanding polishing rate is obtained.
- the pH of the polishing liquid can be measured with a pH meter (for example, model number PH81 manufactured by Yokogawa Electric Corporation). As pH, after calibrating two points using a standard buffer (phthalate pH buffer: pH 4.01 (25 ° C.), neutral phosphate pH buffer: pH 6.86 (25 ° C.)), The value after the electrode is put in the polishing liquid and stabilized after 2 minutes or more is adopted.
- a pH meter for example, model number PH81 manufactured by Yokogawa Electric Corporation.
- a conventionally known pH adjusting agent can be used without particular limitation.
- inorganic acids such as phosphoric acid, sulfuric acid, nitric acid, formic acid, acetic acid, propionic acid, maleic acid.
- Organic acids such as acid, phthalic acid, citric acid, and succinic acid, amines such as ethylenediamine, toluidine, piperazine, histidine, and aniline, nitrogen-containing heterocyclic compounds such as pyridine, imidazole, triazole, and pyrazole can be used.
- the pH stabilizer refers to an additive for adjusting to a predetermined pH, and a buffer component is preferable.
- the buffer component is preferably a compound having a pKa within ⁇ 1.5 with respect to a predetermined pH, and more preferably a compound having a pKa within ⁇ 1.0.
- Such compounds include amino acids such as glycine, arginine, lysine, asparagine, aspartic acid, glutamic acid, ethylenediamine, 2-aminopyridine, 3-aminopyridine, picolinic acid, histidine, piperazine, morpholine, piperidine, hydroxylamine, Amines such as aniline, nitrogen-containing heterocyclic compounds such as pyridine, imidazole, benzimidazole, pyrazole, triazole, benzotriazole, formic acid, acetic acid, propionic acid, malonic acid, succinic acid, glutaric acid, adipic acid, maleic acid And carboxylic acids such as fumaric acid, phthalic acid, citric acid, lactic acid and benzoic acid.
- amino acids such as glycine, arginine, lysine, asparagine, aspartic acid, glutamic acid, ethylenediamine, 2-aminopyridine, 3-aminopyridine,
- the slurry according to this embodiment may be used as it is for polishing, or may be used as a slurry in a so-called two-component type polishing liquid in which the constituents of the polishing liquid are divided into a slurry and an additive liquid.
- the polishing liquid and the slurry differ in the presence or absence of an additive, and the polishing liquid can be obtained by adding the additive to the slurry.
- the slurry according to this embodiment contains at least abrasive grains and water similar to those of the polishing liquid according to this embodiment.
- the abrasive grains are characterized by containing a hydroxide of a tetravalent metal element, and an aqueous dispersion whose content of the abrasive grains is adjusted to 1.0 mass% is subjected to a centrifugal acceleration of 1.59 ⁇ when centrifuged 50 min at 10 5 G is intended to provide a non-volatile content 500ppm or more liquid layers.
- the average secondary particle diameter of the abrasive grains is the same as that of the abrasive grains used in the polishing liquid according to the present embodiment.
- the preferable range and measuring method of the nonvolatile content and the average secondary particle diameter are the same as those of the polishing liquid according to this embodiment.
- the content of abrasive grains is not particularly limited, but is preferably 15% by mass or less based on the total mass of the slurry from the viewpoint that it is easy to avoid agglomeration of abrasive grains.
- the content of the abrasive grains is preferably 0.01% by mass or more based on the total mass of the slurry in that the mechanical action of the abrasive grains can be easily obtained.
- the hydroxide of the tetravalent metal element has a great influence on the polishing characteristics.
- the content of the hydroxide of the tetravalent metal element makes it easy to avoid agglomeration of the abrasive grains, improves the chemical interaction with the surface to be polished, and further improves the polishing rate.
- it is preferably 10% by mass or less based on the total mass of the slurry.
- the content of the tetravalent metal element hydroxide is preferably 0.01% by mass or more based on the total mass of the slurry in that the function of the hydroxide of the tetravalent metal element can be sufficiently expressed.
- the pH of the slurry according to this embodiment is such that the surface potential of the abrasive grains with respect to the surface potential of the surface to be polished becomes good, and the abrasive grains easily act on the surface to be polished. And is preferably 2.0 to 9.0. Further, the lower limit of the pH is preferably 2.0 or more, more preferably 2.5 or more, in that the pH of the slurry is stabilized and problems such as aggregation of abrasive grains due to the addition of a pH stabilizer are less likely to occur. 3.0 or more is more preferable.
- polishing liquid set In the polishing liquid set according to this embodiment, the constituents of the polishing liquid are mixed into the slurry and the additive liquid so that the slurry (first liquid) and the additive liquid (second liquid) are mixed to become the polishing liquid. Saved separately.
- the slurry the slurry according to this embodiment can be used.
- the additive solution a solution obtained by dissolving an additive in water can be used.
- This polishing liquid set is used as a polishing liquid by mixing slurry and additive liquid during polishing. Thus, it can be set as the polishing liquid which is excellent in storage stability by storing the constituent of polishing liquid in at least two liquids.
- the same additive as described in the polishing solution can be used.
- the content of the additive in the additive liquid is 0.01 to 20 based on the total mass of the additive liquid from the viewpoint of suppressing an excessive decrease in the polishing rate when the additive liquid and the slurry are mixed to form a polishing liquid. % By mass is preferable, and 0.02 to 20% by mass is more preferable.
- the water in the additive solution is not particularly limited, but deionized water and ultrapure water are preferable.
- the content of water may be the remainder of the content of other components and is not particularly limited.
- a substrate polishing method using the polishing liquid, slurry or polishing liquid set and a substrate obtained thereby will be described.
- the polishing liquid and slurry it is a polishing method using one liquid type polishing liquid, and when using the polishing liquid set, polishing using a two liquid type polishing liquid or three or more liquid types of polishing liquid. Is the method.
- the film to be polished is preferably an inorganic insulating film such as a silicon oxide film.
- the silicon oxide film can be obtained by a low pressure CVD method, a plasma CVD method, or the like.
- the silicon oxide film may be doped with an element such as phosphorus or boron.
- a so-called Low-k film or the like may be used as the inorganic insulating film.
- the surface of the film to be polished (surface to be polished) preferably has irregularities. In the substrate polishing method according to this embodiment, the uneven surface of the film to be polished is preferentially polished, and a substrate having a flat surface can be obtained.
- the polishing liquid and slurry according to the present embodiment are used for a polishing liquid storage solution that is diluted, for example, twice or more with a liquid medium such as water at the time of use, from the viewpoint of suppressing costs related to storage, transportation, storage, and the like. Or it can be stored as a stock solution for slurry.
- Each of the storage liquids may be diluted with a liquid medium immediately before polishing, or may be diluted on the polishing pad by supplying the storage liquid and the liquid medium onto the polishing pad.
- the dilution ratio of the stock solution is preferably 2 times or more and more preferably 3 times or more because the higher the magnification, the higher the effect of suppressing the cost related to storage, transportation, storage and the like.
- the upper limit is not particularly limited, but the higher the magnification, the greater the amount of components contained in the stock solution (the higher the concentration), and the lower the stability during storage. 200 times or less is more preferable, 100 times or less is more preferable, and 50 times or less is particularly preferable. The same applies to a polishing liquid in which constituent components are divided into three or more liquids.
- a polishing apparatus used in the polishing method according to this embodiment for example, a holder for holding a substrate having a film to be polished, a motor whose rotation speed can be changed, and the like can be attached and a polishing pad can be attached.
- polishing pad For example, a general nonwoven fabric, a polyurethane foam, a porous fluororesin, etc. can be used. Moreover, it is preferable that the polishing pad is grooved so that the polishing liquid is accumulated.
- polishing of a to-be-polished film (for example, silicon oxide film) of the said polishing liquid, the said slurry, and the said polishing liquid set is provided.
- polishing of a film to be polished (for example, a silicon oxide film) using a stopper film (for example, a silicon nitride film, a polysilicon film, etc.) of the polishing liquid, the slurry, and the polishing liquid set is performed.
- a stopper film for example, a silicon nitride film, a polysilicon film, etc.
- alkaline species shown in Table 1 are dissolved in water, an aqueous solution having a concentration of D [mol / L] is prepared as E [g], and the liquid temperature is adjusted to C [° C.] temperature to obtain an alkaline solution. It was.
- Example 4 the metal salt aqueous solution was stirred using a four-blade pitched paddle having a blade part length of 17 cm. In other examples and comparative examples, the metal salt solution was used using a normal stirring blade having a blade part length of 5 cm. The aqueous solution was stirred.
- the slurry precursor 1 was centrifuged and subjected to solid-liquid separation by decantation to remove the liquid. An operation of adding a proper amount of water to the obtained filtrate and stirring well, followed by solid-liquid separation by decantation was further performed three times.
- Pure water was added to 60 g of slurry storage solution to obtain a slurry.
- 5 mass% polyvinyl alcohol aqueous solution was prepared as an additive liquid.
- 60 g of the additive solution was added to the slurry, and mixed and stirred to obtain a polishing solution having an abrasive content of 0.2% by mass.
- the addition amount of the said pure water was calculated and added so that final abrasive grain content might be 0.2 mass%.
- the saponification degree of polyvinyl alcohol in polyvinyl alcohol aqueous solution was 80 mol%, and the average degree of polymerization was 300.
- content of the polyvinyl alcohol in polishing liquid was 1.0 mass%.
- pH (25 degreeC) of a slurry and polishing liquid was measured using the model number PH81 by Yokogawa Electric Corporation, they were 3.6 and 6.0.
- a light transmittance of 90% / cm or more is indicated by a circle
- a light transmittance of 50% / cm or more and less than 90% / cm is indicated by a triangle
- a light transmittance of 50% is indicated by a triangle
- Those less than% / cm are square marks.
- FIG. 7 it can be seen that the absorbance with respect to light with a wavelength of 290 nm and the absorbance with respect to light with a wavelength of 400 nm are well correlated.
- Example 2 using abrasive grains that give a liquid layer having a nonvolatile content of 500 ppm or more, the polishing rate when the same amount of additive was added was compared with Comparative Example 1. Since it is fast, it can be seen that there is a wide margin for adding additives in addition to polyvinyl alcohol. This is thought to be due to an increase in the proportion of fine particles as the nonvolatile content was increased, and an increase in the surface area of the abrasive grains in contact with the surface to be polished, thereby improving the polishing rate. Thereby, compared with the comparative example 1, in Example 2, it is possible to add an additive and to provide the further characteristic.
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Abstract
Description
本実施形態に係る研磨液は、砥粒と添加剤と水とを少なくとも含有する。以下、各構成成分について説明する。
砥粒は、4価金属元素の水酸化物を含むことを特徴とする。4価金属元素は、希土類元素が好ましく、中でも、研磨に適した水酸化物を形成しやすい点で、スカンジウム、イットリウム、ランタン、セリウム、プラセオジム、ネオジム、プロメチウム、ガドリニウム、テルビウム、ジスプロシウム、ホルミウム、エルビウム、ツリウム、イッテルビウム及びルテチウムから選択される少なくとも一種がより好ましい。4価金属元素は、入手が容易であり且つ研磨速度に更に優れる観点から、セリウムが更に好ましい。
前記砥粒は、粒度分布計で測定し得る粒子径を有する大粒子と、粒度分布計で測定し得ない粒子径を有する微細粒子とを含有していると考えられる。このような砥粒を水に分散させた水分散液を充分な遠心力を作用させて遠心分離した場合、水分散液は沈降物と上澄み液(液層)とに主に固液分離し、大粒子は沈降物として沈降し、微細粒子は上澄み液中に浮遊するものと考えられる。
遠心加速度[G]=1118×R×N2×10-8 ・・・(1)
(式中、Rは回転半径(cm)を示し、Nは1分間当たりの回転数(rpm=回転/分)を示す。)
砥粒は、下記条件(a)又は(b)の少なくとも一方を満たすものであることが好ましい。
(a)砥粒の含有量を1.0質量%に調整した水分散液において波長400nmの光に対して吸光度1.50以上を与える。
(b)砥粒の含有量を0.0065質量%に調整した水分散液において波長290nmの光に対して吸光度1.000以上を与える。
本実施形態に係る研磨液は、可視光に対する透明度が高い(目視で透明又は透明に近い)ことが好ましい。具体的には、本実施形態に係る研磨液に含まれる砥粒は、該砥粒の含有量を1.0質量%に調整した水分散液において波長500nmの光に対して光透過率50%/cm以上を与えるものであることが好ましい。これにより、不揮発分含量を指標とする研磨速度の改善効果、及び、吸光度を指標とする研磨速度の改善効果を確実に得やすくなり、添加剤を添加することにより研磨速度が低下することを更に抑制することができるため、研磨速度を維持しつつ他の特性を得ることが容易になる。この観点で、前記光透過率は、60%/cm以上がより好ましく、70%/cm以上が更に好ましく、80%/cm以上が特に好ましく、90%/cm以上が極めて好ましい。光透過率の上限は100%/cmである。
4価金属元素の水酸化物は、4価金属元素の塩(金属塩)とアルカリ液とを混合することにより作製されることが好ましい。これにより、粒径が極めて細かい粒子を得ることができ、研磨傷の低減効果に更に優れた研磨液を得ることができる。このような手法は、例えば、特許文献4に開示されている。4価金属元素の水酸化物は、4価金属元素の塩の水溶液とアルカリ液とを混合することにより得ることができる。4価金属元素の塩としては、金属をMとして示すと、例えば、M(SO4)2、M(NH4)2(NO3)6、M(NH4)4(SO4)4等が挙げられる。
アルカリ液(例えばアルカリ水溶液)中のアルカリ源として使用する塩基としては、特に制限はないが、具体的には例えば、アンモニア、トリエチルアミン、ピリジン、ピペリジン、ピロリジン、イミダゾール、キトサン等の有機塩基、水酸化カリウム、水酸化ナトリウム等の無機塩基などが挙げられる。これらの塩基は、単独で又は二種類以上を組み合わせて使用することができる。
金属塩の水溶液とアルカリ液とにおける原料濃度の制御により、波長400nmや波長290nmの光に対する吸光度、波長500nmの光に対する光透過率を変化させることができる。具体的には、酸とアルカリの単位時間当たりの反応の進行度を小さくすることで吸光度及び光透過率が高くなる傾向があり、例えば、金属塩の水溶液の濃度を高くすることで吸光度及び光透過率が高くなる傾向があり、アルカリ液の濃度を低くすることで吸光度及び光透過率が高くなる傾向がある。また、前記のように弱い塩基性を示す含窒素複素環有機塩基等を塩基として用いる場合は、生産性の観点からはアンモニアを使用する場合よりもアルカリ液の濃度を高くすることが好ましい。
金属塩の水溶液とアルカリ液との混合速度の制御により、波長400nmや波長290nmの光に対する吸光度や波長500nmの光に対する光透過率を変化させることができる。具体的には、混合速度を速くすることで吸光度が高くなる傾向があり、混合速度を遅くすることで吸光度が低くなる傾向がある。また、混合速度を速くすることで波長500nmの光に対する光透過率が高くなる傾向があり、混合速度を遅くすることで光透過率が低くなる傾向がある。
金属塩の水溶液とアルカリ液とを混合するときの攪拌速度の制御により、波長500nmの光に対する光透過率を変化させることができる。具体的には、攪拌速度を速くすることで光透過率が高くなる傾向があり、攪拌速度を遅くすることで光透過率が低くなる傾向がある。
金属塩の水溶液とアルカリ液とを混合するときの液温の制御により、波長500nmの光に対する光透過率を変化させることができる。具体的には、液温を低くすることで光透過率が高くなる傾向があり、液温を高くすることで光透過率が低くなる傾向がある。
本実施形態に係る研磨液は、無機絶縁膜(例えば酸化ケイ素膜)に対して特に優れた研磨速度を得ることができるため、無機絶縁膜を有する基板を研磨する用途に特に適しているが、添加剤を適宜選択することにより、研磨速度と、研磨速度以外の研磨特性とを高度に両立させることができる。
本実施形態に係る研磨液における水は、特に制限はないが、脱イオン水、超純水が好ましい。水の含有量は、他の構成成分の含有量を除いた研磨液の残部でよく、特に限定されない。
研磨液のpHは、被研磨面の表面電位に対する砥粒の表面電位の関係が良好となり、砥粒が被研磨面に対して作用しやすくなるため、更に優れた研磨速度が得られる点で、2.0~9.0が好ましい。更に、研磨液のpHが安定して、pH安定化剤の添加による砥粒の凝集等の問題が生じにくくなる点で、pHの下限は、2.0以上が好ましく、4.0以上がより好ましく、5.0以上が更に好ましい。また、砥粒の分散性に優れ、更に優れた研磨速度が得られる点で、pHの上限は、9.0以下が好ましく、7.5以下がより好ましく、6.5以下が更に好ましい。
本実施形態に係るスラリーは、該スラリーをそのまま研磨に用いてもよく、研磨液の構成成分をスラリーと添加液とに分けた、いわゆる二液タイプの研磨液におけるスラリーとして用いてもよい。本実施形態において、研磨液とスラリーとは添加剤の有無の点で異なり、スラリーに添加剤を添加することで研磨液が得られる。
本実施形態に係る研磨液セットでは、スラリー(第1の液)と添加液(第2の液)とを混合して研磨液となるように該研磨液の構成成分がスラリーと添加液とに分けて保存される。スラリーとしては、本実施形態に係るスラリーを用いることができる。添加液としては、添加剤を水に溶解させた液を用いることができる。この研磨液セットは、研磨時にスラリーと添加液とを混合し研磨液として使用する。このように、研磨液の構成成分を少なくとも二つの液に分けて保存することで、保存安定性に優れる研磨液とすることができる。
前記研磨液、スラリー又は研磨液セットを用いた基板の研磨方法及びこれにより得られる基板について説明する。前記研磨液、スラリーを用いる場合、一液タイプの研磨液を用いた研磨方法であり、前記研磨液セットを用いる場合、二液タイプの研磨液又は三液以上のタイプの研磨液を用いた研磨方法である。
(4価金属元素の水酸化物の作製)
下記の手順に従って、4価金属元素の水酸化物を作製した。なお、下記説明中A~Gで示される値は、表1にそれぞれ示される値である。
スラリー前駆体2を適量採取し、砥粒含有量が1.0質量%となるように水で希釈して測定サンプル(水分散液)を得た。このサンプルを日立工機(株)製の超遠心分離機(装置名:70P-72)に付属の遠沈管(チューブ)に充填し、前記超遠心分離機を用いて回転数50000(回転/分)で50分間遠心分離した。前記超遠心分離機において、チューブ角は26°、最小半径Rminが3.53cm、最大半径Rmaxが7.83cm、平均半径Ravが5.68cmであった。平均半径Ravから計算される遠心加速度は、158756G=1.59×105Gであった。
スラリー前駆体2を適量採取し、砥粒含有量が0.0065質量%(65ppm)となるように水で希釈して測定サンプル(水分散液)を得た。この測定サンプルを1cm角のセルに約4mL入れ、日立製作所(株)製の分光光度計(装置名:U3310)内にセルを設置した。波長200~600nmの範囲で吸光度測定を行い、波長290nmでの吸光度と、波長450~600nmの吸光度を調べた。結果を表2に示す。
スラリー前駆体2を適量採取し、砥粒含有量が0.2質量%となるように水で希釈して測定サンプルを得た。この測定サンプルを1cm角のセルに約4mL入れ、マルバーン社製の装置名:ゼータサイザー3000HS内にセルを設置した。分散媒の屈折率を1.33、粘度を0.887mPa・sとして、25℃において測定を行い、Z-average Sizeとして表示される値を読み取り、平均二次粒子径とした。結果を表2に示す。
スラリー前駆体2に水を加え、砥粒含有量を1質量%に調整してスラリー用貯蔵液を得た。このスラリー用貯蔵液の外観の観察結果を表3に示す。
研磨装置における基板取り付け用の吸着パッドを貼り付けたホルダーに、酸化ケイ素絶縁膜が形成されたφ200mmシリコンウエハをセットした。多孔質ウレタン樹脂製パッドを貼り付けた定盤上に、絶縁膜がパッドに対向するようにホルダーを載せた。前記で得られた研磨液を、供給量200cc/minでパッド上に供給しながら、研磨荷重20kPaで基板をパッドに押し当てた。このとき定盤を78rpm、ホルダーを98rpmで1分間回転させ研磨を行った。研磨後のウエハを純水でよく洗浄し乾燥させた。光干渉式膜厚測定装置を用いて研磨前後の膜厚変化を測定して、研磨速度を求めた。結果を表3に示す。
Claims (26)
- 砥粒と水とを含有するスラリーであって、
前記砥粒が、4価金属元素の水酸化物を含み、且つ、該砥粒の含有量を1.0質量%に調整した水分散液を遠心加速度1.59×105Gで50分遠心分離したときに不揮発分含量500ppm以上の液層を与えるものである、スラリー。 - 前記砥粒が、該砥粒の含有量を1.0質量%に調整した水分散液において波長400nmの光に対して吸光度1.50以上を与えるものである、請求項1に記載のスラリー。
- 前記砥粒が、該砥粒の含有量を0.0065質量%に調整した水分散液において波長290nmの光に対して吸光度1.000以上を与えるものである、請求項1又は2に記載のスラリー。
- 前記砥粒が、該砥粒の含有量を0.0065質量%に調整した水分散液において波長450~600nmの光に対して吸光度0.010以下を与えるものである、請求項1~3のいずれか一項に記載のスラリー。
- 前記砥粒が、該砥粒の含有量を1.0質量%に調整した水分散液において波長500nmの光に対して光透過率50%/cm以上を与えるものである、請求項1~4のいずれか一項に記載のスラリー。
- 前記4価金属元素の水酸化物が、4価金属元素の塩とアルカリ液とを混合して得られるものである、請求項1~5のいずれか一項に記載のスラリー。
- 前記4価金属元素が4価セリウムである、請求項1~6のいずれか一項に記載のスラリー。
- 第1の液と第2の液とを混合して研磨液となるように該研磨液の構成成分が前記第1の液と前記第2の液とに分けて保存され、前記第1の液が請求項1~7のいずれか一項に記載のスラリーであり、前記第2の液が添加剤と水とを含む、研磨液セット。
- 前記添加剤が、ビニルアルコール重合体及び当該ビニルアルコール重合体の誘導体から選択される少なくとも一種である、請求項8に記載の研磨液セット。
- 前記添加剤の含有量が研磨液全質量基準で0.01質量%以上である、請求項8又は9に記載の研磨液セット。
- 砥粒と添加剤と水とを含有する研磨液であって、
前記砥粒が、4価金属元素の水酸化物を含み、且つ、該砥粒の含有量を1.0質量%に調整した水分散液を遠心加速度1.59×105Gで50分遠心分離したときに不揮発分含量500ppm以上の液層を与えるものである、研磨液。 - 前記砥粒が、該砥粒の含有量を1.0質量%に調整した水分散液において波長400nmの光に対して吸光度1.50以上を与えるものである、請求項11に記載の研磨液。
- 前記砥粒が、該砥粒の含有量を0.0065質量%に調整した水分散液において波長290nmの光に対して吸光度1.000以上を与えるものである、請求項11又は12に記載の研磨液。
- 前記砥粒が、該砥粒の含有量を0.0065質量%に調整した水分散液において波長450~600nmの光に対して吸光度0.010以下を与えるものである、請求項11~13のいずれか一項に記載の研磨液。
- 前記砥粒が、該砥粒の含有量を1.0質量%に調整した水分散液において波長500nmの光に対して光透過率50%/cm以上を与えるものである、請求項11~14のいずれか一項に記載の研磨液。
- 前記4価金属元素の水酸化物が、4価金属元素の塩とアルカリ液とを混合して得られるものである、請求項11~15のいずれか一項に記載の研磨液。
- 前記4価金属元素が4価セリウムである、請求項11~16のいずれか一項に記載の研磨液。
- 前記添加剤が、ビニルアルコール重合体及び当該ビニルアルコール重合体の誘導体から選択される少なくとも一種である、請求項11~17のいずれか一項に記載の研磨液。
- 前記添加剤の含有量が研磨液全質量基準で0.01質量%以上である、請求項11~18のいずれか一項に記載の研磨液。
- 表面に被研磨膜を有する基板の該被研磨膜を研磨パッドに対向するように配置する工程と、
前記研磨パッドと前記被研磨膜との間に請求項1~7のいずれか一項に記載のスラリーを供給しながら、前記被研磨膜の少なくとも一部を研磨する工程と、を有する、基板の研磨方法。 - 表面に被研磨膜を有する基板の該被研磨膜を研磨パッドに対向するように配置する工程と、
請求項8~10のいずれか一項に記載の研磨液セットにおける前記第1の液と前記第2の液とを混合して前記研磨液を得る工程と、
前記研磨パッドと前記被研磨膜との間に前記研磨液を供給しながら、前記被研磨膜の少なくとも一部を研磨する工程と、を有する、基板の研磨方法。 - 表面に被研磨膜を有する基板の該被研磨膜を研磨パッドに対向するように配置する工程と、
請求項8~10のいずれか一項に記載の研磨液セットにおける前記第1の液と前記第2の液とをそれぞれ前記研磨パッドと前記被研磨膜との間に供給しながら、前記被研磨膜の少なくとも一部を研磨する工程と、を有する、基板の研磨方法。 - 表面に被研磨膜を有する基板の該被研磨膜を研磨パッドに対向するように配置する工程と、
前記研磨パッドと前記被研磨膜との間に請求項11~19のいずれか一項に記載の研磨液を供給しながら、前記被研磨膜の少なくとも一部を研磨する工程と、を有する、基板の研磨方法。 - 前記被研磨膜が酸化ケイ素を含む、請求項20~23のいずれか一項に記載の研磨方法。
- 前記被研磨膜の表面が凹凸を有する、請求項20~24のいずれか一項に記載の研磨方法。
- 請求項20~25のいずれか一項に記載の研磨方法により研磨された、基板。
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CN103222036B (zh) | 2016-11-09 |
CN103409108B (zh) | 2015-04-22 |
JP2013211571A (ja) | 2013-10-10 |
US20180108536A1 (en) | 2018-04-19 |
US20130137265A1 (en) | 2013-05-30 |
SG190058A1 (en) | 2013-06-28 |
TW201329177A (zh) | 2013-07-16 |
TWI512065B (zh) | 2015-12-11 |
JP5626358B2 (ja) | 2014-11-19 |
JPWO2012070542A1 (ja) | 2014-05-19 |
TWI434906B (zh) | 2014-04-21 |
TW201229166A (en) | 2012-07-16 |
US9881802B2 (en) | 2018-01-30 |
US9881801B2 (en) | 2018-01-30 |
US10825687B2 (en) | 2020-11-03 |
KR20130129400A (ko) | 2013-11-28 |
JP5831496B2 (ja) | 2015-12-09 |
CN103222036A (zh) | 2013-07-24 |
US20120329371A1 (en) | 2012-12-27 |
KR20130133187A (ko) | 2013-12-06 |
CN103409108A (zh) | 2013-11-27 |
KR101886892B1 (ko) | 2018-08-08 |
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