CN1228784C - 非易失性半导体存储装置的编程方法 - Google Patents

非易失性半导体存储装置的编程方法 Download PDF

Info

Publication number
CN1228784C
CN1228784C CNB021191735A CN02119173A CN1228784C CN 1228784 C CN1228784 C CN 1228784C CN B021191735 A CNB021191735 A CN B021191735A CN 02119173 A CN02119173 A CN 02119173A CN 1228784 C CN1228784 C CN 1228784C
Authority
CN
China
Prior art keywords
mentioned
memory cell
control gate
voltage
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021191735A
Other languages
English (en)
Chinese (zh)
Other versions
CN1391231A (zh
Inventor
金井正博
龟井辉彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hello Lsi Design And Installation Technology Inc
Seiko Epson Corp
Original Assignee
Hello Lsi Design And Installation Technology Inc
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hello Lsi Design And Installation Technology Inc, Seiko Epson Corp filed Critical Hello Lsi Design And Installation Technology Inc
Publication of CN1391231A publication Critical patent/CN1391231A/zh
Application granted granted Critical
Publication of CN1228784C publication Critical patent/CN1228784C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CNB021191735A 2001-05-11 2002-05-10 非易失性半导体存储装置的编程方法 Expired - Fee Related CN1228784C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001141616A JP2002334588A (ja) 2001-05-11 2001-05-11 不揮発性半導体記憶装置のプログラム方法
JP141616/01 2001-05-11
JP141616/2001 2001-05-11

Publications (2)

Publication Number Publication Date
CN1391231A CN1391231A (zh) 2003-01-15
CN1228784C true CN1228784C (zh) 2005-11-23

Family

ID=18988043

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021191735A Expired - Fee Related CN1228784C (zh) 2001-05-11 2002-05-10 非易失性半导体存储装置的编程方法

Country Status (5)

Country Link
US (1) US6587380B2 (fr)
EP (1) EP1256959A3 (fr)
JP (1) JP2002334588A (fr)
KR (1) KR100474626B1 (fr)
CN (1) CN1228784C (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3716914B2 (ja) 2001-05-31 2005-11-16 セイコーエプソン株式会社 不揮発性半導体記憶装置
US6532172B2 (en) * 2001-05-31 2003-03-11 Sandisk Corporation Steering gate and bit line segmentation in non-volatile memories
JP3843869B2 (ja) 2002-03-15 2006-11-08 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3821032B2 (ja) * 2002-03-20 2006-09-13 セイコーエプソン株式会社 ファイルストレージ型不揮発性半導体記憶装置
JP3867624B2 (ja) 2002-06-06 2007-01-10 セイコーエプソン株式会社 不揮発性半導体記憶装置およびその駆動方法
JP3815381B2 (ja) * 2002-06-06 2006-08-30 セイコーエプソン株式会社 不揮発性半導体記憶装置およびその駆動方法
KR100475119B1 (ko) * 2002-11-26 2005-03-10 삼성전자주식회사 Ｓｏｎｏｓ 셀이 채용된 ｎｏｒ 형 플래시 메모리 소자의동작 방법
JP2004199738A (ja) * 2002-12-16 2004-07-15 Seiko Epson Corp 不揮発性記憶装置
JP3587842B2 (ja) 2002-12-17 2004-11-10 沖電気工業株式会社 データ書き換え装置およびデータ書き換え方法ならびにフラッシュメモリ装置
JP3985689B2 (ja) * 2003-02-21 2007-10-03 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP2004265508A (ja) * 2003-02-28 2004-09-24 Seiko Epson Corp 不揮発性半導体記憶装置
JP3873908B2 (ja) * 2003-02-28 2007-01-31 セイコーエプソン株式会社 不揮発性半導体記憶装置及びその製造方法
JP3786095B2 (ja) * 2003-02-28 2006-06-14 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP4426868B2 (ja) * 2003-04-04 2010-03-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置および半導体集積回路装置
US6982892B2 (en) * 2003-05-08 2006-01-03 Micron Technology, Inc. Apparatus and methods for a physical layout of simultaneously sub-accessible memory modules
JP3767588B2 (ja) * 2003-08-29 2006-04-19 セイコーエプソン株式会社 不揮発性半導体記憶装置及びその制御方法
JP4196191B2 (ja) * 2003-09-09 2008-12-17 セイコーエプソン株式会社 不揮発性半導体記憶装置及びその制御方法
US7447077B2 (en) * 2005-08-05 2008-11-04 Halo Lsi, Inc. Referencing scheme for trap memory
US8138540B2 (en) * 2005-10-24 2012-03-20 Macronix International Co., Ltd. Trench type non-volatile memory having three storage locations in one memory cell
JP5311784B2 (ja) * 2006-10-11 2013-10-09 ルネサスエレクトロニクス株式会社 半導体装置
US8677056B2 (en) * 2008-07-01 2014-03-18 Lsi Corporation Methods and apparatus for interfacing between a flash memory controller and a flash memory array
US8611169B2 (en) * 2011-12-09 2013-12-17 International Business Machines Corporation Fine granularity power gating
CN103778948A (zh) * 2014-01-09 2014-05-07 上海华虹宏力半导体制造有限公司 存储器阵列的控制方法
US9881683B1 (en) 2016-12-13 2018-01-30 Cypress Semiconductor Corporation Suppression of program disturb with bit line and select gate voltage regulation
JP2019057335A (ja) * 2017-09-19 2019-04-11 東芝メモリ株式会社 半導体記憶装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4723225A (en) * 1985-10-15 1988-02-02 Texas Instruments Incorporated Programming current controller
US5278439A (en) * 1991-08-29 1994-01-11 Ma Yueh Y Self-aligned dual-bit split gate (DSG) flash EEPROM cell
US5364806A (en) * 1991-08-29 1994-11-15 Hyundai Electronics Industries Co., Ltd. Method of making a self-aligned dual-bit split gate (DSG) flash EEPROM cell
JPH07161851A (ja) 1993-12-10 1995-06-23 Sony Corp 半導体不揮発性記憶装置およびその製造方法
US5408115A (en) 1994-04-04 1995-04-18 Motorola Inc. Self-aligned, split-gate EEPROM device
US5422504A (en) 1994-05-02 1995-06-06 Motorola Inc. EEPROM memory device having a sidewall spacer floating gate electrode and process
US5870335A (en) * 1997-03-06 1999-02-09 Agate Semiconductor, Inc. Precision programming of nonvolatile memory cells
JPH118324A (ja) * 1997-04-23 1999-01-12 Sanyo Electric Co Ltd トランジスタ、トランジスタアレイおよび不揮発性半導体メモリ
JPH1131393A (ja) * 1997-05-15 1999-02-02 Sanyo Electric Co Ltd 不揮発性半導体記憶装置
US5969383A (en) 1997-06-16 1999-10-19 Motorola, Inc. Split-gate memory device and method for accessing the same
US5851881A (en) * 1997-10-06 1998-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making monos flash memory for multi-level logic
KR100488583B1 (ko) * 1997-12-31 2005-12-08 삼성전자주식회사 듀얼비트게이트분리형플래쉬메모리소자및그의구동방법
JP3973819B2 (ja) 1999-03-08 2007-09-12 株式会社東芝 半導体記憶装置およびその製造方法
KR20010004269A (ko) * 1999-06-28 2001-01-15 김영환 플래쉬 메모리 셀 어레이 구조 및 데이터 기록 방법
US6255166B1 (en) 1999-08-05 2001-07-03 Aalo Lsi Design & Device Technology, Inc. Nonvolatile memory cell, method of programming the same and nonvolatile memory array
JP4058219B2 (ja) * 1999-09-17 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路
KR100308132B1 (ko) * 1999-10-07 2001-11-02 김영환 비휘발성 메모리소자와 그의 셀어레이 및 그의 데이타 센싱방법
US6177318B1 (en) 1999-10-18 2001-01-23 Halo Lsi Design & Device Technology, Inc. Integration method for sidewall split gate monos transistor
US6248633B1 (en) 1999-10-25 2001-06-19 Halo Lsi Design & Device Technology, Inc. Process for making and programming and operating a dual-bit multi-level ballistic MONOS memory
JP2001357682A (ja) * 2000-06-12 2001-12-26 Sony Corp メモリシステムおよびそのプログラム方法
JP2001357681A (ja) * 2000-06-12 2001-12-26 Sony Corp 半導体記憶装置およびその駆動方法
ATE392698T1 (de) * 2000-12-05 2008-05-15 Halo Lsi Design & Device Tech Programmier- und löschverfahren in zwilling-monos-zellenspeichern
EP1246196B1 (fr) * 2001-03-15 2010-02-17 Halo, Inc. Utilisation de mémoire MONOS à deux bits pour grande largeur de bande de programmation
JP4715024B2 (ja) * 2001-05-08 2011-07-06 セイコーエプソン株式会社 不揮発性半導体記憶装置のプログラム方法

Also Published As

Publication number Publication date
KR20030009119A (ko) 2003-01-29
CN1391231A (zh) 2003-01-15
US20030002343A1 (en) 2003-01-02
EP1256959A3 (fr) 2003-10-01
JP2002334588A (ja) 2002-11-22
US6587380B2 (en) 2003-07-01
EP1256959A2 (fr) 2002-11-13
KR100474626B1 (ko) 2005-03-08

Similar Documents

Publication Publication Date Title
CN1228784C (zh) 非易失性半导体存储装置的编程方法
CN1228786C (zh) 非易失性半导体存储器的编程方法
CN1197147C (zh) 非易失性半导体存储装置
US6757196B1 (en) Two transistor flash memory cell for use in EEPROM arrays with a programmable logic device
EP1583101B1 (fr) Intégration d'une mémoire flash dédiée au stockage des données et d'un autre mémoire flash dédié au stockage du code
CN101067970A (zh) P沟道能隙工程硅氧氮氧硅nand闪存的编程与擦除方法
CN1705101A (zh) p通道电荷捕捉记忆元件的编程与擦除方法
CN1610976A (zh) 采用电介质存储元件的多态非易失性集成电路存储系统
CN1949521A (zh) 具有修改的频带结构的非挥发存储器单元的操作方法及装置
CN1290118C (zh) 非易失半导体存储装置
CN1790717A (zh) 非挥发性存储单元以及相关操作方法
CN1231921C (zh) 非易失性半导体存储器件
US7512003B2 (en) Non-volatile memory device
CN1992083A (zh) 控制存储器单元的临界电压分布的脉冲宽度收敛法
CN1269138C (zh) 非易失性半导体存储装置
CN1258225C (zh) 非易失性存储装置
CN1399345A (zh) 非易失性半导体存储装置
CN1203551C (zh) 非易失性半导体存储装置
CN101211663B (zh) 对虚拟接地存储器的可变编程及编程验证的方法
CN1509477A (zh) 擦除后自动编程扰乱(apde)期间提高效率的快闪存储装置
US7881123B2 (en) Multi-operation mode nonvolatile memory
CN1542978A (zh) 字节操作非易失性半导体存储装置
CN1181555C (zh) 非易失性半导体存储装置
CN1179418C (zh) 非易失性半导体存储装置
CN1389925A (zh) 非易失性半导体存储器

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CI01 Correction of invention patent gazette

Correction item: Patentee

Correct: Seiko Epson Corp.

False: Seiko Epson Corp.|Hello, LSI design and installation technology, Inc.

Number: 47

Page: 828

Volume: 21

CI03 Correction of invention patent

Correction item: Patentee

Correct: Seiko Epson Corp.

False: Seiko Epson Corp.|Hello, LSI design and installation technology, Inc.

Number: 47

Page: The title page

Volume: 21

COR Change of bibliographic data

Free format text: CORRECT: PATENTEE; FROM: SEIKO EPSON CORP. HARROW LSI DESIGN AND INSTALLATION TECHNOLOGY COMPANY TO: SEIKO EPSON CORP.

ERR Gazette correction

Free format text: CORRECT: PATENTEE; FROM: SEIKO EPSON CORP. HARROW LSI DESIGN AND INSTALLATION TECHNOLOGY COMPANY TO: SEIKO EPSON CORP.

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20051123

Termination date: 20130510