CN1172350A - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN1172350A
CN1172350A CN97114610A CN97114610A CN1172350A CN 1172350 A CN1172350 A CN 1172350A CN 97114610 A CN97114610 A CN 97114610A CN 97114610 A CN97114610 A CN 97114610A CN 1172350 A CN1172350 A CN 1172350A
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mentioned
filament
lead portion
semiconductor device
coating
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CN1131562C (zh
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荒川定义
伊藤诚市
西山健一
丸山幸荣
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Panasonic Holdings Corp
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Matsushita Electronics Corp
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Abstract

把芯片3粘到具有镍,钯和金的层叠镀层的引线框架1的管芯垫部分2上。通过键合工具20用加重约60(g)把由金丝构成的金属细丝6挤压到芯片的电极焊盘4上,边加输出功率约55(mW)的超声波边进行第1键合工序。用加重150～250(g)把金属细丝6挤压到内引线部分5上,加上功率为0～20(mW)的超声波进行适合于层叠镀层的特性的第2键合工序,就可以连金镀层的剥落也不产生地在短时间内进行牢固的接合。

Description

半导体器件及其制造方法
本发明涉及可防止金属丝键合工序中引线框架的叠层镀层的剥落，确保金属丝与引线框架之间的连接的可靠性的半导体器件及其制造方法。
近些年来，作为引线框架，已开发出了具有在由铜(Cu)构成的板状本体的上边，施以作为基底镀层的镍(Ni)电镀，在其上边施行钯(Pd)电镀之后，再在其上边施行金(Au)电镀的层叠镀层的引线框架。
以下，对应用了已施行了上述那种镍/钯/金的层叠镀的引线框架的现有的半导体器件进行说明。
图9示出的是现有的半导体器件的构造的剖面图。如图9所示，现有的半导体器件具备：具有管芯垫部分2、内引线部分5和外引线部分8的引线框架1；用银膏之类的粘接剂粘接并装配到引线框架1的管芯垫部分2上边的半导体片芯3；把该半导体芯片3的电极4和引线框架1的内部引线部分5的键合区5a连接起来的金属细丝6。而且，把半导体芯片3的外围区域、即把管芯垫部分2、内引线部分5，半导体芯片3及金属细丝6包含在内的区域用密封树脂7进行密封，使从该密封树脂7向外突出出来的引线框架1的外引线部分8成形为适合与外部机器连接的形状，就构成了半导体器件。
其次，对现有的半导体器件的制造方法进行说明。图10～图13的剖面图示出了现有的半导体器件的制造工序。
首先，如图10所示，在引线框架1的管芯垫部分2上边用银膏之类的粘接剂粘接半导体芯片3(粘管芯工序)。
其次，如图11所示，用金属细丝6把已装配到管芯垫部分2上边的半导体芯片3的电极4与引线框架1的内引线部分5进行电连(金属丝键合工序)。这一工序在把金丝用作金属细丝的情况下，通常应用被称之为球焊法的方法。就是说，应用具有被称之为毛细管的键合工具20的金属丝键合机，通常，作为第1键合工序，把顶端已成为球状的金属细丝6挤压连接到半导体芯片3的电极4上，接着，作为第2键合工序，连续地把金属细丝6挤压连接到内引线部分5的键合区5a上。借助于这两个键合工序，就介以金属细丝6把半导体芯片3的电极4和内引线部分5的键合区5a电连了起来。
这里，在上述金属丝键合工序中。第1键合工序在把超声输出功率定为55(mW)、挤压加重定为60(g)的条件下进行，第2键合工序在把超声波输出功率定为90～100(mW)，挤压加重定为100(g)的条件下进行以使两者连接起来。金属细丝6的直径一般为25～35μm左右。
其次，如图12所示。在金属丝键合工序结束之后，用密封树脂7把包括管芯垫部分2、内引线部分5、半导体芯片3和金属细丝6在内的区域密封起来。这一工序在把已装配上半导体芯片3的引线框架1设置于模具中之后用传递模塑法进行。
最后，如图13所示。使从密封树脂7向外突出出来的引线框架1的外引线部分成形完成半导体器件。
但是，在用上述现有的制造工序制造的半导体器件中，存在着下述问题。
图14(a)、(b)是把上述现有的半导体器件的内引线5的键合区5a的附近放大后示出的剖面图和斜视图。如该图所示，引线框架1被构成为在铜制的本体9的上边形成了镍镀层10，钯镀层11和金镀层12的各个镀层。镍镀层10，钯镀层11和金镀层12的各自的厚度分别为0.5(μm)，0.03(μm)和0.002(μm)。
在这里，如图(a)、(b)所示，在内引线5的键合区5a中，人们观察到在用键合工具20挤压切断金层细丝6后的顶端部分6a的周围已半环状地产生了包括金镀层12在内的剥落区域13。该剥落区域13也有时会达到镍镀层10或基底的本体9而不在钯镀层11内停下来。这样一来，由于产生该剥落区域13，不仅镍镀层会被腐蚀而且使金属细丝连接强度劣化，还会诱发因被剥落的镀覆物附着于金属丝键合机的键合工具20上，在下一个金属丝键合工序(第1键合工序)中使顶端的球形变形之类的金属丝键合不合要求。
在这里，在对这种在第2键合工序中产生剥落区域13的机理进行研究之后，人们推测恐怕是因为和第1键合工序一样地加上超声波而且加上了比第1键合工序功率更大的超声波进行第2键合工序的缘故。就是说，现在的金属丝键合工序，为了确保高速性(量产性)和连接部分的可靠性，进行加超声波与加重、加热以瞬时地进行牢固连接这种作法已成为不可或缺的。另外，为了降低造价，现状是把金镀层的厚度作得尽可能地薄(约0.002μm)。在对具有这样的构造的引线框架用金属丝键合机边加超声波边用金属细线把半导体芯片的电极与内引线部分连接起来的情况下，人们推测在薄的金镀层内不能把超声波的振动充分地吸收，以致于在金镀层—钯镀层的交界处，特别是在被键合工具挤压的区域的外周部分处因产生龟裂而剥落。
本发明就是针对上述现有的课题而发明的，目的是提供一种在对具有用最上层为金镀层的那种软质材料构成的层叠镀层构造的引线框架的金属丝键合工序中，不会招致最上层的剥落而且可以以高效率牢固地连接金属细丝和引线框架的半导体器件的构造及其制造方法。
对于上述现有的电镀层剥落这一课题，本发明人等已查明了是进行金属丝键合时的键合工具的超声波输出功率(mW)使镀层剥落，特别是金等等的软质镀材易于受其影响这一事实。
因此，为了达到上述目的，本发明所采取的措施是或者是做成用内引线部分的键合区域中的电镀层可以吸收超声波的构造，或者采用不用超声波或使超声波输出功率变成极其之小后连接金属细线与内引线部分的方法。具体地说，采取本发明的第1～3方面的发明中所述的半导体器件所涉及的措施和第4～14方面的发明中所述的半导体器件所涉及的措施。
本发明的半导体器件，根据本发明的第1方面所述，具有下述部分：具有电极焊盘的半导体芯片；由用金属构成的本体和在该本体层的上边形成且用软质材料构成的层叠镀层构成，并至少具有内引线部分和外引线部分的引线框架；连接上述半导体芯片的电极焊盘和上述内引线部分的金属细丝，上述内引线部分之内上述金属细丝所连接的区域中的上述层叠镀层的最上层的厚度比其他的区域中的最上层的厚度厚。
这样一来，由于内部引线部分之内金属细丝所连接的区域中的层叠镀层的最上层已形成得厚，故变成了即使是在金属丝键合工序中加上超声波输出功率，也可用最上层吸收振动、且不产生最上层剥落的构造。
根据本发明所述的第2方面，在本发明的第1方面中，理想的是用相同性质的材料构成上述内引线部分的上述层叠镀层的最上层和上述金属细丝。
这样一来，由于金属细丝与层叠镀层的最上层用相同的软质材料构成，故吸收超声波的振动的功能变大，而且也变成易于键合的构造。
根据本发明所述的第3方面，在本发明的第1或第2方面中，上述内引线部分的本体用铜板构成，上述内引线部分的层叠镀层用依次层叠镍镀层、钯镀层和金镀层的办法构成，且理想的是上述金属细丝已事先用以金为主成分的材料构成。
这样一来，就将变成可以防止在具有腐蚀性不好的钯镀层的内引线部分中产生剥落区域的构造。
本发明的第1半导体器件的制造方法，根据本发明的第4方面，具备有下述工序：准备具有电极焊盘的半导体芯片的工序；准备在由金属构成的本体的上边，施行最上层用软质材料构成的层叠镀层而形成，具有内引线部分和外引线部分的引线框架的工序；在金属细丝的顶端接触到上述半导体芯片的电极焊盘上边的状态下，边加压加超声波，边使金属细丝与电极焊盘接合的第1键合工序；在上述金属细丝的另外的部分已接触到上述内引线部分上边的状态下，加压而不需加超声波地使上述金属细丝与上述内引线部分连接的第2键合工序。
倘采用这种方法，由于在第2键合工序中在金属细丝与内引线部分之间不加超声波而仅仅用挤压加载使两者进行连接，所以可在短时间内进行牢固的焊接而不会使层叠镀层的最上层产生剥落。
本发明的第2半导体器件的制造方法。根据本发明的第5方面，具备有下述工序，它们是：准备具有电极焊盘的半导体芯片的工序；准备在由金属构成的本体的上边施行最上层用软质材料构成的层叠镀层而形成，具有内引线部分和外引线部分的引线框架的工序；在金属细丝的顶端已接蚀到上述半导体芯片的电极焊盘上边的状态下边加压加超声波边使金属细丝与电极焊盘接合的第1键合工序；在上述金属细丝的另外的部分已接触到上述内引线部分上边的状态下，用比上述第1键合工序大的挤压加载和比第1键合工序小的超声波功率使上述金属细丝与上述内引线部分连接的第2键合工序。
倘采用这种方法，由于在第2键合工序中的超声波功率极其之小，故可以防止起因于现有的半导体器件的制造方法那样的加上比第1键合工序还大的功率的超声波的层叠镀层的最上层的剥落。
根据本发明的第6方面，在本发明的第5方面中，把超声波输出功率定为约55(mW)、挤压加重定为约60(g)进行上述第1键合工序；把超声波输出功率定为0～20(mW)，挤压加重定为150～250(g)进行上述第2键合工序是理想的。
根据本发明的第7方面，在本发明的第4或第5方面中，在上述第1和第2键合工序中，理想的是用与上述层叠镀层的最上层同样性质的材料构成的金属细丝。
根据本发明的第8方面，在本发明的第4或第5方面中，在上述准备引线框架的工序中，理想的是形成在由铜板构成的本体的上边依次层叠镍镀层、钯镀层和金镀层而构成的层叠镀层，在上述第1和第2键合工序中理想的是使用用以金为主成分的材料构成的金属细丝。
根据本发明的第9方面，在发明的第4，5，6，7或8方面中，上述第2键合工序理想的是在150-300(℃)的温度下进行。
根据本发明的第10方面，在发明的第4，5，6，7，8或9方面中，在上述准备引线框架的工序中，也可以把上述内引线部分之内连接上述金属细丝的区域的层叠镀层的最上层的厚度做得比其他区域的最上层的厚度厚。
倘采用这种方法，在第2键合工序中，即使给内引线部分和金属细丝之间的连接部分加上超声波，也可用层叠镀层的最上层吸收超声波所产生的振动，从而可以防止产生剥落。
本发明的第3半导体器件的制造方法，根据发明的第11方面，具备有下述工序，它们是：准备具有电极焊盘的半导体芯片的工序；准备引线框架的工序，该引线框架用施行在由金属构成的本体的上边依次层叠镍镀层，钯镀层和金镀层构成的层叠镀的办法形成，且具有内引线部分和外引线部分；在已把用以金为主成分的材料构成的金属细丝的顶端接触到上述半导体芯片的电极焊盘上的状态下，边加压加超声波边使金属细丝与电极焊盘接合的第1键合工序；在上述金属细丝的另外的部分已接触到上述内引线部分上边的状态下，加上150～250(g)的挤压加重和输出功率为0～20(mW)的超声波使上述金属细丝与上述内引线部分连接的第2键合工序。
倘采用这种方法，由于第2键合工序中的超声波输出极其之小，故不需使因本身为层叠镀层的最上层的金镀层剥落而易腐蚀的钯镀层露出来，或者进而使其下层的镍镀层沿构成引线框架的主体的金属露出来就可以进行金属丝键合。而且，由于以这么大的加重挤压，故可以进行适合于镍镀层、钯镀层和金镀层这种层叠镀层整体的特性的接合，可在短时间内得到大的接合强度，可以制造可靠性高的半导体器件。
根据本发明的第12方面，在发明的第11方面中，在上述第1和第2键合工序之后，还具备用树脂密封上述半导体芯片、上述金属细丝和上述内引线部分的工序。
倘采用这种方法，则在收纳于造价便宜的树脂密封式封装之内、易于被含于密封树脂中的水分腐蚀的内引线部分中，可以防止起因于产生剥落区域的腐蚀等等。因此，结果变成为可以得到便宜且可靠性高的半导体器件。
根据发明的第13方面，在发明的第11或第12方面中，理想的是在150～300(℃)的温度下进行上述第2键合工序。
倘采用这种方法，由于可以以适合于镍镀层、钯镀层和金镀层这种层叠镀层全体的特性的比较低温的加热温度进行第2键合工序，故可以用短时间进行可靠性高的接合。
根据发明的第14方面，在发明的第11或13方面中，在上述第2键合工序中，也可使超声波的输出功率为0。
倘采用本发明的第1～3方面，则由于在用金属细丝把半导体芯片的电极和具有层叠镀层的引线框架的内引线部分连接起来的半导体器件中，已把内引线部分内进行与金属细丝之间的连接的键合区域处的层叠镀层的最外层的厚度做得比其余部分厚，故即使在金属丝键合时通过键合工具把超声波加到连接部分上，也不会使层叠镀层的下层或本体露出来，因而可以防止因层叠镀层的最外层的剥落而引起的金属细丝连接强度的劣化。
倘采用本发明的第4方面和本发明的第7～10方面，则由于在用金属细丝把半导体芯片的电极与具有层叠镀层的引线框架的内引线部分连接起来的半导体器件中，在连接金属细丝与内引线部分的第2键合工序中仅仅加挤压加重而不加超声波地把金属细丝连到内引线部分上，故可以使金属细丝—内引线部分间的连接强度很牢固的同时，又可确实地防止因加上超声波而引起的内引线的层叠镀层的最上层的剥落，因此，可以改善所制造的半导体器件的可靠性。
倘采用本发明的第5方面及第6～10方面，则由于在用金属细丝把半导体芯片的电极与具有层叠镀层的引线框架的内引线部分连起来的半导体器件中，设计成在连接金属细丝和内引线部分的第2键合工序中加上比第1键合工序的输出功率低的超声波，故可以使金属细丝—内引线部分之间的连接强度变得牢固的同时，又可防止在加上比第1键合工序的功率大的超声波时所产生的层叠镀层的最上层处的剥落，因而可以提高所制造的半导体器件的可靠性。
倘采用本发明的第11～14方面，则由于在用金属细丝把半导体芯片的电极和具有顺次使镍、钯和金进行层叠而构成的层叠镀层的引线框架的内引线部分连接起来的半导体器件中、被设计为在把金属细丝与内引线部分连接起来的第2键合工序中，用150～250(g)的加重进行挤压，而且加上输出功率为0～20(mW)的超声波，故可以进行极其适合于钯和金的层叠镀层的特性的接合，可以进行牢固而且可靠性高的金属丝键合而不会在层叠镀层的最上层处产生剥落。
下边简单说明附图。
图1的剖面图示出了第1实施例的半导体器件的构造。
图2的剖面图放大示出了第1实施例的半导体器件之内，内引线部分的键合区域附近。
图3的剖面图示出了第2实施例的半导体器件的制造工序中的粘管芯工序。
图4的剖面图示出了第2实施例的半导体器件的制造工序中的金属丝键合工序。
图5的剖面图示出了第2实施例的半导体器件的制造工序中的树脂密封工序。
图6的剖面图示出了第2实施例的半导体器件的制造工序中的外引线成形工序。
图7是第2实施例的半导体器件的制造工序中的金属丝键合条件与现有的金属丝键合条件的比较图。
图8是把用第2实施例的半导体器件的制造工序形成的内引线的键合区附近放大后示出的剖面图和斜视图。
图9是现有的半导体器件的构造的剖面图。
图10的剖面图示出了现有的半导体器件的制造工序中的粘管芯工序。
图11的剖面图示出了现有的半导体器件的制造工序中的金属丝键合工序。
图12的剖面图示出了现有的半导体器件的制造工序中的树脂密封工序。
图13的剖面图示出了现有的半导体器件的制造工序中的外引线成形工序。
图14是把用现有的半导体器件的制造工序形成的内引线的键合区附近放大后示出的剖面图和斜视图。
实施例
第1实施例
首先，对本发明的第1实施例进行说明。图1是本实施例的半导体器件的构成的剖面图。
如图1所示，本实施例的半导体器件，用银膏之类的粘接剂把半导体芯片3接合、装配到引线框架1的管芯垫部分2上边，再用金属细丝6把该半导体芯片3的电极4和引线框架1的内引线部分5电连起来。接着，用密封树脂7把半导体芯片3、金属细丝6及引线框架1的内引线部分5密封起来后，使从该密封树脂7向外突出出来的引线框架1的外引线部分8成形，就构成了半导体器件。
其中，本实施例的半导体器件的特征是把引线框架1的内引线部分5之内，本身为在金属丝键合工序中键合金属细丝6的区域的键合区5a处的镀层的厚度做得厚些。以下，对此特征部分进行说明。
图2的剖面图示出了内引线部分5的键合区域5a的附近的内引线部分5与金属细丝6之间的连接状态。如该图所示，本实施例的引线框架1由由铜板构成的本体9，在该本体9上边已形成的镍镀层10、钯镀层11和金镀层12等各镀层构成。而且，把引线框架1中内引线部分5的键合区域5a处的金镀层12的厚度形成得比其他区域厚。比如说，金镀层12的其地区域的厚度为0.002(μm)左右，而在键合区域5a处的厚度约为0.03(μm)。若采用这一构造，在用金制的金属细丝连接半导体芯片3的电极4和内引线部分5的时候，在内引线部分5的键合区域5a处，即使加上金属丝键合机的键合工具的超声波功率，由于最外层的金镀层12厚，故或者是某种程度吸收了超声波的振动而不产生金镀层12的剥落，或者是只不过仅仅是金电镀层12的最表面层剥落。因此，在金属丝键合工序中，下层一侧的钯镀层11、镍镀层10不会露出来，从而可以防止因最外层剥落而产生的金属细丝连接强度的劣化。
此外，在本实施例中，虽然镍镀层10、钯镀层11的镀层厚度，分别是0.5(μm)，0.03(μm)，但并不受限于这些厚度。另外，本实施例里的金镀层12的厚度，在键合区域5a以外是0.002(μm)，键合区域5a的厚度为0.03(μm)，但不限于这些厚度。
第2实施例
其次，说明第2实施例的半导体器件的制造方法。图3～6是本实施例的半导体器件的制造工序的剖面图。
首先，在图3的工序中，准备具有管芯垫部分2和内引线部分5及外引线部分8的引线框架1。但是，图中虽然没有画出详细的剖面图，但在引线框架1中已形成了和上述第1实施例的图2大体上相同的构造，在由铜板构成的本体的上边，设有镍镀层、钯镀层、金镀层等各镀层。但是，在本实施例中，本身为最上层的金镀层在整个面上具有大体上均一的厚度，并没有把键合区域5a处的金镀层镀得特别厚。另外，镍镀层、钯镀层和金镀层等各镀层的厚度分别为0.5(μm)、0.03(μm)、0.002(μm)。然后，在具有这样的构成的引线框架1的管芯垫部分2上边，用银膏之类的粘接剂粘上半导体芯片3。
其次，在图4的工序中，介以用金丝制作的金属细丝6把已装配到管芯垫部分2上的半导体芯片3的电极4和引线框架1的内引线部分5电连起来。这一工序和上述现有的金属丝键合工序一样，用利用了具有被称为毛细管的键合工具20的金属丝键合机(没画出来)的球焊法进行。此外，金属细丝6的直径约为25～35μm。通常，键合工序分为把金属细丝6的一端连到半导体芯片3的电极4上的第1键合工序和把金属细丝6的另一端连到引线框架1的内引线部分5上的第2键合工序。
其中，在第1键合工序中，用键合工具20边加超声波边用加重60(g)左右的负荷把金属细丝的顶端(一般已成为球状)挤压到半导体芯片3的电极4上，使金属细丝6与半导体芯片3接合。
另外，在第2键合工序中，把顶端已连到了半导体芯片3的电极4上的金属细丝的一部分用键合工具20挤压到内引线部分5的键合区域5a上。这时，不加超声波或者即使加超声波也要抑制为20(mW)以下的小的输出功率，同时，把承重做成约200(g)左右加上比第1键合工序中的加重大的负荷。这一点就是本实施例的半导体器件的制造方法的特征。接着，在用这一挤压力和加热使金属细丝6接合到内引线部分5上的同时，用键合工具20的刀刃切断金属细丝6。
其次，在图5的工序中，在上述各金属丝键合工序结束之后，用密封树脂把半导体芯片3、金属细丝6、引线框架1中的管芯垫部分2及内引线部分5密封起来。这一工序，在把已装配上半导体芯片3的引线框架4设置于模具中之后用传递模塑法进行。之后，切断引线框架1之内处于密封树脂7的外边的部分，从外引线部分8处切下来。
最后，在图6的工序中，采用使从密封树脂中突出出来的外引线部分8成形的技术，完成半导体器件。
如上所述，在本实施例的半导体器件的制造工序中，采用在第1键合工序中，把超声波输出功率定为55(mW)，挤压加重定为60(g)，在第2键合工序中，把超声波输出功率定为0～20(mW)，把挤压加重定为约200(g)这样的与现有的金属丝键合条件大为不同的条件下进行金属丝键合工序的办法，就可以防止引线框架1上的镀层的剥落。特别是在金属细丝6与引线框架1的最外层的镀层是同种材料且是软质材料的情况下，金属细丝—内引线部分之间的接合强度将变得更大。
图7(a)、(b)示出的图是现有技术和本实施例之间在键合时的键合工具的超声波输出功率及加重的比较。图7(a)和图7(b)分别表示出了现有方法中的条件和本实施例中的条件。
如上所述，在第1键合工序即键合半导体芯片和金属细丝的工序中，本实施例的条件与现有方法的条件是一样的，但在第2键合工序即对引线框架和金属细丝进行键合的工序中，则把超声波输出功率定为现有技术的1/5以下，加重则设定为约2倍。第2键合工序中的超声波输出功率也可以不为0(mW)。是比如说约10(mW)也罢或是极其近于0(mW)的值也罢，只要是在20(mW)以下，就可不使最上层的金镀层剥落地进行键合。
在这里，对用本实施例的方法可以进行金属细丝6与内引线部分5之间的第2键合工序而不产生像现有技术那样的图14(a)，(b)所示的剥落区域13的理由进行一番考察。在进行金属丝键合之际，超声波功率产生使金属细丝对被连接体进行互相磨擦的作用，加重及加热则产生使金属细丝与被连接体进行热压的作用。通常的加热温度为200(℃)。这样一来，采用使这样的条件进行组合进行键合工序的办法，就可以实施一次的键合所需的时间为5(msec)、结果整个键合工序所需时间为15(msec)左右这么一种高速的键合工序。但是，应用本实施例的第2键合工序，不会产生层叠镀层的最上层处的剥落，且可以用15(msec)这么短的时间进行牢固的键合的理由虽然还不十分清楚，但这么大的加重和比较低温的加热条件，特别好地适合于镍/钯/金的层叠镀层整体的特性这一经验性的事实，借助于本次的发明已经弄清楚了。另外，作为附属性的事项，已确认了以下的经验性的事实。
比如说，在把第1键合工序中的超声波功率定为0(mW)，把温度定为约250(℃)的情况下，就可以把挤压加重定得比上述的200(g)小。另外，在把超声波功率定为20(mW)，温度定为180(℃)的情况下，把挤压加重定为大于200(g)是理想的。另外，温度越高则键合时间可短缩得更多。
在此，若对在发明的过程中用实验得到的键合条件进行归纳，则超声波功率理想的是或者不加，或即便要加应为0～20(mW)；挤压加重理想的是150～250(g)的范围；加热温度理想的范围是150～300(℃)。但对金属细丝，使用直径约25～35(μm)的金丝，层叠镀层由上述厚度的镍/钯/金这么3层构成。
图8(a)，(b)是在第2键合工序中把超声波功率定为0(mW)、加重定为200(g)进行金属丝键合时，内引线的键合区域5a附近的剖面图和斜视图。如同图所示，在用本实施例的方法进行键合的键合区域5a的周围没有产生图14(a)，(b)所示的那种环状的剥落区域13。就是说，金属细丝6的顶端部分6a已连接好而没有剥落引线框架1的内引线部分5的最外层的金镀层12。当然，构成本体9的铜也没有露出来，镍镀层10、钯镀层11也没有露出或剥落。这样一来，由于镀层没有剥落，故构成镀层的材料也不会附着到键合工具上去，在下一个键合工序即第1键合工序中，将在金属细丝的顶端形成的小球也不会产生形状异常。
还有，实施例的图示虽然略去了，但在第2实施例的半导体器件的制造方法中，即便是采用使引线框架1的金镀层12之中内引线部分5的键合区域5a处的厚度做得比其余区域厚，而且即使把金属丝键合工序中的第2键合工序(把金属细丝键合到内引线部分上去)的超声波功率定为0～20(mW)，也可以在防止因金镀层12的剥落使下层的镀层露出的同时进行金属丝键合，可以发挥使连接强度稳定的效果。
此外，层叠镀层的构造，即便是不是本实施例的那种由镍/钯/金这么3层的构造，只要层叠镀层的最上层是由软质材料，特别是由与金属细丝相同的材料构成的情况的话，就可以发挥本发明的效果。在这种情况下，即使金属丝键合机的键合工具的超声波功率的值设定为极其之小，金属细丝与构成镀层的最上层的软质剂也可用挤压加重在极短时间内进行接合，而且最上层的构造不会遭受破坏。因此，就可以既防止金属丝键合工序对具有层叠镀构造的引线框架的剥落又可进行可靠性高的金属丝键合。

Claims (14)

1.一种半导体器件，该半导体器件具备：
具有电极焊盘的半导体芯片；
由用金属制成的本体和在该本体的上边形成且用软质材料构成的层叠镀层构成，至少具有内引线部分和外引线部分的引线框架；
连接上述半导芯片的电极焊盘和上述引线框架的金属细丝，
其特征是：
上述引线部分之内，连接上述金属细丝的区域中的上述层叠镀层的最上层的厚度比其他的区域的最上层的厚度厚。
2.权利要求1所述的半导体器件，其特征是：上述内引线部分的上述层叠镀层的最上层和上述金属细丝用相同性质的材料构成。
3.权利要求1或2所述的半导体器件，
其特征是：
上述内引线部分的主体用铜板构成；
上述内引线部分的层叠镀层用顺次层叠镍镀层，钯镀层和金镀层构成；
上述金属细丝用以金为主成分的材料构成。
4.一种半导体器件的制造方法，其特征是具备下述工序：
准备具有电极焊盘的半导体芯片的工序；
准备引线框架的工序，该引线框架用在由金属构成的本体的上边，施行最上层用软质材料构成的层叠镀层来形成且具有内引线部分和外引线部分；
第1键合工序，在金属细丝的顶端已接触到上述半导体芯片的电极焊盘上边的状态下，边加重和超声波边使金属细丝与电极焊盘接合；
第2键合工序，在已把上述金属细丝的另一部分接触到上述内引线部分上边的状态下，加重而不加超声波，使上述金属细丝与上述内引线部分连接。
5.一种半导体器件的制造方法，其特征是具备有下述工序：
准备具有电极焊盘的半导体芯片的工序；
准备引线框架的工序，该引线框架用在由金属构成的本体的上边施行最上层由软质材料构成的层叠镀层来形成且具有内引线部分和外引线部分；
第1键合工序，在金属细丝的顶端已接触到上述半导体芯片的电极焊盘上的状态下，边加重和超声波，边使金属细丝与电极焊盘接合；
第2键合工序，在上述金属细丝的另一部分已接触到上述内引线部分上的状态下，加上比上述第1键合工序大的挤压加重和比第1键合工序小的超声波输出功率使上述金属细丝与上述内引线部分连接起来。
6.权利要求5所述的半导体器件的制造方法，其特征是：
上述第1键合工序把超声波输出功率定为约55(mW)，把挤压加重定为约60(g)进行；
上述第2键合工序把超声波输出功率定为0～20(mW)，把挤压加重定为150～250(g)进行。
7.权利要求4或5所述的半导体器件的制造方法，其特征是：
在上述第1和第2键合工序中，使用用与上述层叠镀层的最上层相同性质的材料构成的金属细丝。
8.权利要求4或5所述的半导体器件的制造方法，其特征是：
在上述准备引线框架的工序中，在由铜板构成的本体的上边，形成用顺次层叠镍镀层、钯镀层和金镀层的办法构成的层叠镀层。
在第1和第2键合工序中，用以金为主成分的材料构成的金属细丝。
9.权利要求4，5，6，7或8所述的半导体器件的制造方法，其特征是：上述第2键合工序在150～300(℃)的温度下进行。
10.权利要求4，5，6，7，8或9所述的半导体器件的制造方法，其特征是：在上述准备引线框架的工序中，把上述内引线部分之内连接金属细线的区域处的层叠镀层的最上层的厚度形成得比其他的区域的最上层的厚度厚。
11.一种半导体器件的制造方法，其特征是具备有下述工序：
准备具有电极焊盘的半导体芯片的工序；
准备引线框架的工序，该引线框架用在由金属构成的本体的上边施行顺次层叠镍镀层、钯镀层和金镀层构成的层叠镀层来形成且具有内引线部分和外引线部分；
第1键合工序，在已把用以金为主成分的材料构成的金属细丝的顶端接触到上述半导体芯片的电极焊盘上边的状态下，边加重和加超声波边使金属细丝与电极焊盘接合。
第2键合工序，在已把上述金属细丝的另一部分接触到上述内引线部分上边的状态下，加上150～250(g)的挤压加重和输出功率为0～20(mW)的超声波，使上述金属细丝与上述内引线部分连接。
12.权利要求11所述的半导体器件的制造方法，其特征是：在上述第1键合工序和第2键合工序之后，还具备有用树脂把上述半导体芯片、上述金属细丝和上述内引线部分密封起来的工序。
13.权利要求11或12所述的半导体器件的制造方法，其特征是：上述第2键合工序在150～300(℃)的温度下进行。
14.权利要求11或13所述的半导体器件的制造方法，其特征是：在上述第2键合工序中，使超声波的输出功率为0。
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