CN102484083A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN102484083A CN102484083A CN2010800396780A CN201080039678A CN102484083A CN 102484083 A CN102484083 A CN 102484083A CN 2010800396780 A CN2010800396780 A CN 2010800396780A CN 201080039678 A CN201080039678 A CN 201080039678A CN 102484083 A CN102484083 A CN 102484083A
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Abstract
半导体装置包括:半导体芯片;配置于半导体芯片的侧方的引脚;以及引线,该引线的一端以及另一端分别与半导体芯片以及引脚接合,且在半导体芯片以及引脚上分别具有球珠部以及侧视楔形的针脚部。引线相对于引脚的进入角度为50°以上,针脚部的长度为33μm以上。
Description
技术领域
本发明涉及半导体装置及其制造方法。
背景技术
典型的半导体装置包括:冲模垫(ダイパツド)、配置于冲模垫上的半导体芯片、配置于冲模垫的周围的引脚、以及连接半导体芯片和引脚的引线。
在架设引线时,通常进行正常键合,先将引线与半导体芯片接合(第一键合),接下来将引线与引脚(第二键合)。但是,在半导体芯片上的用于连接引线的部分(焊盘)与引脚的高低差比较大的情况下,由于难以将引线与引脚良好地进行接合,因此进行所谓的逆向键合(reversebonding)。在逆向键合中,将引线与引脚进行第一键合,将引线与半导体芯片进行第二键合。
图34是通过逆向键合来架设引线的半导体装置的示意性的侧视图。
半导体芯片201在将作为元件形成面的表面朝向上方的状态下,其背面与冲模垫202的上表面接合。在半导体芯片201的表面的周缘部配置有焊盘203。然后,在焊盘203与配置于冲模垫202的周围的引脚204的上表面之间,架设引线205。
在引线键合时,由于将冲模垫202以及引脚204固定于引线接合器(wire bonder),因此引脚204被压盘208压住。压盘208在与半导体芯片201的相反侧,在隔开微小的间隔的位置与引脚204的上表面的引线205(球珠部206)的接合位置抵接。然后,在保持于引线接合器的毛细管C(用虚线表示)的引线205的前端部,形成FAB(Free Air Ball,无空气球),该FAB与引脚204的上表面接合。之后,使该毛细管C向焊盘203移动,引线205被压到焊盘203,进而被扯掉。由此,在焊盘203和引脚204之间架设了引线205。通过逆向键合而架设的引线205具有在引脚204上形成为圆形年糕形状的球珠部206,在焊盘203上具有侧视观察为楔形状的针脚(stitch)部207。
树脂密封型的半导体装置具有将半导体芯片与引脚架一起用树脂封装来密封的构造。引脚架通过在金属薄板上打眼而形成,具有岛(冲模垫)和配置在该岛的周围的多个引脚。半导体芯片被芯片焊接在岛的上表面,通过在该表面和各引脚之间架设的键合引线而与各引脚电连接。
为了将半导体芯片进行芯片焊接至岛上,例如使用焊锡膏等膏状的接合剂。在岛的上表面涂敷了膏状的接合剂之后,将半导体芯片配置于接合剂上,并对半导体芯片施加荷重。由此,在半导体芯片与岛之间,接合剂被压散,从而半导体芯片与岛接合,实现了半导体芯片对岛的芯片焊接。
专利文献
专利文献1:JP特开2004-207292号公报
专利文献2:JP特开2003-249616号公报
发明的概要
发明要解决的课题
参照图34,若在将FAB接合到引脚204后毛细管C朝向焊盘203直线移动,则引脚205有可能会接触到半导体芯片201的角部。因此,如图34中虚线所示,毛细管C一旦移动到远离芯片201一侧之后,朝向焊盘203移动。但是,此时,存在毛细管C与压盘208接触的可能性。
为了防止毛细管C与压板208的接触,在FAB(球珠部206)的接合位置与压板208之间设置充分的间隙。因此,即使缩小半导体装置的封装尺寸,也不能增加可从1片引脚架中获得的半导体装置(冲模垫202以及引脚204)的数量。
在正常键合中,不会出现毛细管C与压板208的接触的问题。因此,只要能通过正常键合获得引线与引脚的良好的接合,就能增加可从1片引脚架获得的半导体装置的数量。
另一方面,在利用膏状的接合剂(焊锡)的情况下,在对半导体芯片施加荷重时,会从半导体芯片与岛之间向周围溢出较多的接合剂。该接合剂的溢出会引起如下所述的各种不良状况。
例如,在岛较小的情况下,该溢出的接合剂从岛上溢出。另外,即使岛与半导体芯片相比形成充分大,在半导体芯片和岛之间架设引线的情况下,在岛中的用于引线接合(键合)的空间中扩散有接合剂,会妨害键合。进而,不管岛有多大,在半导体芯片为薄型的情况下,接合剂都会从半导体芯片的侧方绕到表面。
为了解决接合剂的扩散引起的问题,考虑使用DAF(Die Attach Film:晶片附加薄膜)。DAF是薄膜状的接合材料。在半导体芯片为晶圆的状态下,在其背面粘帖DAF。然后,通过将半导体晶圆与DAF一起进行切割,获得在背面粘帖有DAF的半导体芯片。通过将该半导体芯片压在岛上,岛与半导体芯片接合,实现了半导体芯片对岛的芯片焊接。
但是,在晶圆的背面粘贴有DAF的状态下,将该晶圆切分为小尺寸(例如550μm方)较困难,不能将DAF用在小尺寸的半导体芯片对岛的接合中。
发明内容
本发明的一个目的在于,提供一种通过正常键合来将引线良好地接合于引脚的半导体装置。
另外,本发明的其它目的在于,提供一种即使是小尺寸的半导体芯片,也能防止焊锡扩散引起的各种问题的半导体装置及其制造方法。
用于解决课题的手段
本发明的一个技术方案的半导体装置具备:半导体芯片;引脚,其配置于所述半导体芯片的侧方;和引线,其一端以及另一端分别与所述半导体芯片以及所述引脚接合,并在所述半导体芯片以及所述引脚上分别具有球珠部以及侧视楔形的针脚部。即,在本发明所涉及的半导体装置中,通过正常键合,将引线架设在半导体芯片(设于半导体芯片的表面的焊盘)和配置于其侧方的引脚之间。因此,引线在半导体芯片上具有球珠部,在引脚上具有侧视楔形的针脚部。
并且,在一个实施方式所涉及的半导体装置中,引线相对于引脚的进入角度、即引线的针脚部侧与引脚所呈的角度为50°以上。
这种情况下,只要针脚部的长度(引线与引脚的接触部分在沿着引线的方向的长度)为33μm以上,就能在引线的针脚部附近不产生裂缝地实现引线对引脚的良好的接合。
另外,在针脚部的上表面与引脚的上表面所呈的角度为15°以上的情况下,也能不在引线的针脚部附近产生裂缝地实现引线对引脚的良好的接合。
当然,即使针脚部的长度为33μm以上、且针脚部的上表面与引脚的上表面所成的角度为15°以上,也能在引线的针脚部附近不产生裂缝地实现引线对引脚的良好的接合。
另外,在一个实施方式所涉及的半导体装置中,引线的长度为400μm以下,半导体芯片中的球珠部的接合部分与引脚中的所述针脚部的接合部分的高低差为200μm以上。
这种情况下,只要针脚部的长度为33μm以上,就能在引线的针脚部附近不产生裂缝地实现引线对引脚的良好的接合。
另外,在针脚部的上表面与引脚的上表面所呈的角度为15°以上的情况下,也能在引线的针脚部附近不产生裂缝地实现引线对引脚的良好的接合。
当然,即使针脚部的长度为33μm以上、且针脚部的上表面与引脚的上表面所呈的角度为15°以上,也能在引线的针脚部附近不产生裂缝地实现引线对引脚的良好的接合。
另外,本发明的一个技术方案所涉及的半导体装置的制造方法在于,包括:支撑体配置工序,在岛上配置由固体的焊锡构成的支撑体;芯片支撑工序,在所述支撑体配置工序后,在所述支撑体上载置半导体芯片,使所述支撑体支撑所述半导体芯片;和接合工序,在所述芯片载置工序后,通过热处理,使所述支撑体熔融来接合所述岛和所述半导体芯片。
根据该半导体装置的制造方法,首先,在岛上配置由固体焊锡构成的支撑体。然后,在支撑体上载置半导体芯片。由此,半导体芯片被支撑体所支撑。之后,通过热处理,支撑体(焊锡)熔融,岛与半导体芯片被接合。
在热处理时,通过焊锡所具有的表面张力以及湿润性,熔融的焊锡在半导体芯片与岛之间扩散。因此,与在半导体芯片与岛的接合中使用膏状的接合剂的方法不同,在将半导体芯片对岛进行接合时,不需要对半导体芯片施加荷重。通过不对半导体芯片施加荷重,能防止由该荷重引起的焊锡的扩散。另外,通过按照半导体芯片的尺寸来改变支撑体的大小、形状以及数量,从而不管半导体芯片的尺寸多大,都能在半导体芯片与岛之间不产生较大的焊锡的溢出地来对半导体芯片与岛进行接合。因而,即使是小尺寸的半导体芯片,也能不产生焊锡扩散引起的各种问题地实现对岛的芯片焊接。
优选在所述支撑体配置工序前,还包括:在所述岛上形成由银构成的薄膜的工序,在所述支撑体配置工序中,在所述薄膜上配置所述支撑体。由于焊锡相对于银的湿润性较高,因此若在热处理时支撑体熔融,则该熔融的支撑体(焊锡)在形成有由银构成的薄膜的范围内扩散。因此,通过形成由银构成的薄膜,能控制支撑体的扩散,能确切地防止由焊锡扩散引起的各种问题。
也可以是,在岛上形成有从其上表面向下深挖而成的凹部,在支撑体配置工序中,将支撑体配置于凹部内。由此,能稳定地将支撑体配置于岛上。
另外,也可以在所述支撑体配置工序后、所述芯片支撑工序前,还包括:将焊剂涂敷在所述支撑体的焊剂涂敷工序。由此,能防止支撑体的表面氧化,并且在热处理时能提高支撑体(焊锡)的湿润性。另外,由于半导体芯片以及岛中与焊剂的接触部分通过焊剂的作用而被洗净,因此,能进一步提高半导体芯片与岛的粘接性。
在半导体装置的制造方法中包括焊剂涂敷工序的情况下,在通过该制作方法所制造出的半导体装置中,在接合半导体芯片和岛的焊锡接合剂中附着有焊剂。即,通过包括焊剂涂敷工序的制作方法而制造的半导体装置包括:半导体芯片;岛,其上表面接合有所述半导体芯片;和焊锡接合剂,其由焊锡构成,且介于所述半导体芯片和所述岛之间来使所述半导体芯片和所述岛进行接合,在所述焊锡接合剂中附着有焊剂。
本发明的上述的、或者进而其它目的、特征以及效果,通过参照附图而进行的下述实施方式的说明,会更加明确。
附图说明
图1A是本发明的第1实施方式所涉及的半导体装置的俯视图。
图1B是将变形例应用在图1A中的图。
图2A是从图1A所示的半导体装置中省略了半导体芯片、引线以及焊锡接合剂的状态的示意性的俯视图。
图2B是将变形例应用在图2A中的图。
图3是用剖切线III-III剖切图1A所示的半导体装置时的示意性的剖视图。
图4是表示图1A所示的剖切线IV-IV下的半导体装置的示意性的剖视图。
图5A是表示图1A所示的半导体装置的制造工序的示意性的剖视图。
图5B是表示图5A的下一工序的示意性的剖视图。
图5C是表示图5B的下一工序的示意性的剖视图。
图5D是表示图5C的下一工序的示意性的剖视图。
图5E是表示图5D的下一工序的示意性的剖视图。
图6是表示岛以及支撑体的其它构成的立体图。
图7是表示岛以及支撑体的又一其它构成的立体图。
图8是表示实施例1中使用的毛细管的前端形状的图解性的剖视图。
图9是表示在实施例1获得的针脚部的附近的SEM图像(其一)。
图10是表示在实施例1获得的针脚部的附近的SEM图像(其二)。
图11是表示在实施例1获得的针脚部的附近的SEM图像(其三)。
图12是表示实施例2中使用的毛细管的前端形状的图解性的剖视图。
图13是表示在实施例2获得的针脚部的附近的SEM图像(其一)。
图14是表示在实施例2获得的针脚部的附近的SEM图像(其二)。
图15是表示比较例中是使用的毛细管的前端形状的图解性的剖视图。
图16是表示在比较例获得的针脚部的附近的SEM图像。
图17是本发明的第2实施方式所涉及的半导体装置的俯视图。
图18是图17所示的剖切线A-A下的半导体装置的示意性的剖视图。
图19是表示实施例1中使用的毛细管的前端形状的图解性的剖视图。
图20是在实施例1获得的针脚部的附近的SEM图像(其一)。
图21是在实施例1获得的针脚部的附近的SEM图像(其二)。
图22是在实施例1获得的针脚部的附近的SEM图像(其三)。
图23是表示实施例2中使用的毛细管的前端形状的图解性的剖视图。
图24是在实施例2获得的针脚部的附近的SEM图像(其一)。
图25是在实施例2获得的针脚部的附近的SEM图像(其二)。
图26是表示比较例中使用的毛细管的前端形状的图解性的剖视图。
图27是在比较例获得的针脚部的附近的SEM图像。
图28是表示本发明的第3实施方式所涉及的半导体装置的示意性的俯视图。
图29是表示从图28所示的半导体装置中省略了半导体芯片、引线以及焊锡粘接剂的状态的示意性的俯视图。
图30是表示用剖切线B-B剖切图28所示的半导体装置时的示意性的剖视图。
图31A是表示图28所示的半导体装置的制造工序的示意性的剖视图。
图31B是表示图31A的下一工序的示意性的剖视图。
图31C是表示图31B的下一工序的示意性的剖视图。
图31D是表示图31C的下一工序的示意性的剖视图。
图31E是表示图31D的下一工序的示意性的剖视图。
图32是表示岛以及支撑体的其它构成的立体图。
图33是表示岛以及支撑体的再其它构成的立体图。
图34是表示通过逆向键合而架设了引线的半导体装置的示意性的侧视图。
具体实施方式
(第一实施方式)
图1A是表示本发明的第1实施方式所涉及的半导体装置的俯视图。图1B是将变形例应用在图1A中的图。在图1A~图1B中,透过被树脂封装密封的各部件来用实线进行表示。图2A是从图1A所示的半导体装置中省略了半导体芯片、引线以及半导体接合剂的状态的示意性的俯视图。图2B是将变形例应用在图2A中的图。图3是表示用剖切线III-III来剖切图1A所示的半导体装置时的示意性的剖切图。图4是表示图1A所示的IV-IV线下的半导体装置的示意性的剖视图。在图4中,省略了树脂封装的图示。
半导体装置1具有将半导体芯片3与引脚架2接合并用树脂封装4来密封它们的构造。半导体装置1(树脂封装4)的外形构成为扁平的长方体(在本实施方式中为俯视观察的正方形的六面图)。
引脚架2如图1A所示,具备:俯视观察下配置在半导体装置1的中央部的冲模垫(岛)5、和配置在冲模垫5的周围的4个引脚6。引脚架2通过对金属薄板(例如铜薄板)进行穿孔而形成。
冲模垫5一体地具备中央部7和悬吊部8。中央部7在俯视观察下,其中心与树脂封装4的中心重合,形成为具有相对于树脂封装4的各边倾斜45°的4条边的俯视四边形。悬吊部8形成为从中央部7的各角部向与该角部对置的树脂封装4的侧面延伸的俯视四边形。中央部7的下表面在树脂封装4的背面露出。
在中央部7,形成有从其上表面向下挖的2个(1对)的槽状的凹部107(参照图2A)。各凹部107形成为半圆形截面,与中央部7的面对面的2条边平行地延伸。在中央部7的上表面,在俯视观察包括形成有凹部107的部分的区域,形成有由银(Ag)构成的薄膜108(参照图2A)。具体地,如图3所示,薄膜108在半导体芯片103接合在岛5上的状态下,和岛5的与半导体芯片3的对置部分形成为大致相同的尺寸。
引脚6在俯视观察下,在与冲模垫5的中央部7的各边相对置的部分各配置有1个。各引脚6在俯视观察下形成为梯形。更具体地,各引脚6具有:与冲模垫5的相对的边平行的边9、在树脂封装4的侧面上延伸的边10、与边10正交并与树脂封装4的侧面平行而延伸的边11、分别连接边9与边10、11的边12、13。各引脚6的下表面在树脂封装4的背面露出,作为用于与布线基板(未图示)连接的外部端子发挥功能。另外,各引脚6的具有边10的侧面在树脂封装4的侧面露出。另外,各引脚6如图1B以及2B所示那样,形成为俯视三角形。
如图3所示,半导体芯片3以作为元件形成面的表面(设备形成面)朝向上方的状态,其背面隔着导电性的焊锡接合剂109而与冲模垫5接合(芯片焊接)。在半导体芯片3的背面,披覆有用于提高焊锡接合剂109和半导体芯片3的粘接性的金属膜115。金属膜115例如是通过从半导体芯片3侧依次层叠Au(金)、Ni(镍)、Ag以及Au而形成的层叠膜。在焊锡接合剂109的周缘部、即半导体芯片3与岛5的接合部分的侧方,附着有树脂状固化的固化焊剂110。
半导体芯片3的厚度为200μm以上(在本实施方式中,为230μm),在半导体芯片3的表面(更详细地,是后述的焊盘14的表面)与引脚6的上表面之间,存在与该半导体芯片3的厚度相应的高低差。
如图1A所示,在半导体芯片3的表面形成有与形成在半导体芯片3的布线(未图示)电连接的5个焊盘14。4个焊盘14(下面称作“角部的焊盘14”)配置在半导体芯片3的各角部。剩下的一个焊盘14(下面称作“剩下的焊盘14”)与1个角部的焊盘14相邻而配置。
在各焊盘14接合有引线(键合引线)15的一端。各引线15的另一端与引脚6的上表面接合。具体地,一端接合在4个角部的焊盘的引线15的另一端分别与彼此不同的引脚6的上表面接合。一端接合在剩下的焊盘14的引线15的另一端与距该剩下的焊盘14最近的引脚6接合。由此,半导体芯片3介由引线15而与引脚6电连接。引线15的长度为400μm以下(本实施方式中为300~400μm)。
另外,剖切线III-III与从半导体芯片3的图1A中的下端的角部的焊盘14延伸的引线15、从所述剩下的焊盘14延伸的引线145两者平行地延伸。剖切线III-III实际与这些引线15重合,但为了能容易看到这些引线15,图示在了从这些引线15稍微偏离的位置。另外,剖切线IV-IV与从半导体芯片3的图1A中的上端的角部的焊盘14延伸的引线15平行地延伸。剖切线IV-IV实际与该引线15重合,但为了能容易看到该引线15,图示在了从这些引线15稍微偏离的位置。
各引线15通过正常键合而形成。即,在引线15的形成时(引线键合时),通过对保持在引线接合器的毛细管C(参照图34)的引线15的前端部施加电流,在该前端部形成FAB(Free Air Ball)。然后,通过毛细管C的移动,FAB被压到焊盘14。通过毛细管C对FAB的按压,FAB变形,从而如图4所示那样,在焊盘14上形成圆形年糕形状的球珠部16,实现了引线15的一端对焊盘14的接合(第一键合)。之后,将毛细管C从焊盘14向上方提高使之离开焊盘14规定的高度。然后,使毛细管C朝向引脚6的上表面,以相对于引脚6的上表面大于50-的倾斜角度移动,将引线15压到引脚6的上表面,进而扯掉。由此,引线15的另一端变形从而在引脚6上形成侧视楔型的针脚部17,实现了引线15的另一端对引脚6的接合(第二键合)。由此,引线15在焊盘14上具有球珠部16,在引脚6上具有针脚部17。
在第二键合时,通过毛细管C以相对于引脚6的上表面大于50°的倾斜角度移动,能使得引线15相对于引脚6的上表面的进入角度、即引线15的针脚部17侧的端部与引线6的上表面所成的角度β为50°以上。
并且,在半导体装置1中,针脚部17的长度(引线15与引脚6的接触部分的沿着引线15的方向的长度)L为33μm以上。另外,针脚部17的上表面与引脚6的上表面所成的角度α为15°以上。
由此,即使引线15相对于引脚6的上表面的进入角度为50°以上,也能不在引线15的针脚部17的附近产生裂缝地实现引线15对引脚6的良好的接合。另外,即使引线15的长度为400μm以下,且半导体芯片3的表面与引脚6的上表面的高低差为200μm以上,也能不在引线15的针脚部17的附近产生裂缝地实现引线15对引脚6的良好的接合。
图5A~图5E是用于依次说明图1A以及图1B所示的半导体装置的制造工序的示意性的剖视图。另外,在图5A~图5E中,省略引脚6以及键合引线15等的图示。
首先,准备具备形成有凹部107的岛5的引脚架2。引脚架2例如通过对铜薄板进行加压加工以及打穿加工而形成。并且,如图5A所示,通过镀敷法或溅射法在岛5上形成由银构成的薄膜108。此时,在凹部107的内面也形成有薄膜108。
接下来,如图5(B)所示,在凹部107内的薄膜108上配置由固体的焊锡构成的支撑体113。支撑体113在俯视观察下形成为与凹部107大致相同的形状,截面为圆形。
之后,如图5(C)所示,在支撑体113上涂敷焊剂114。可以将焊剂114一起涂敷在岛5的上表面的全部区域,也可以将焊剂114选择性地涂敷在从支撑体113的从凹部107露出的部分。
接下来,如图5D所示,在支撑体113上载置半导体芯片3。由此,半导体芯片3被支撑体113所支撑。
然后,例如,在支撑体113为铅焊锡的情况下,通过在340℃的温度条件下进行30sec的热处理,如图5E所示,支撑体113熔融,通过其表面张力以及湿润性而在形成有薄膜108的范围内扩散支撑体113。由此,半导体芯片3与岛5之间对置部分的间隙被熔融的支撑体113(焊锡接合剂109)填满,实现了半导体芯片3与岛5的接合。另外,此时,焊剂114将半导体芯片3的下表面(金属膜115的表面)以及岛5的上表面洗净,并在半导体芯片3的侧方凝集并固化,成为固化焊剂110。
之后,在半导体芯片3与引脚6之间架设键合引线15,通过按照仅露出岛5以及引脚6的背面的方式来形成树脂封装4,获得图1A~3所示的半导体装置1。
如上所述,在热处理时,通过焊锡所具有的表面张力以及湿润性,熔融的焊锡在半导体芯片3与岛5之间扩散。因此,与在半导体芯片3与岛5的接合中使用膏状的接合剂的方法不同,在将半导体芯片3对岛5进行接合时,不需要对半导体芯片3施加荷重。通过不对半导体芯片3施加荷重,能防止由该荷重引起的焊锡的扩散。另外,通过按照半导体芯片3的尺寸来改变支撑体113的大小、形状以及数量,不管半导体芯片3的尺寸多大,都能不产生来自半导体芯片3与岛5之间焊锡的较大的溢出地来接合半导体芯片3与岛5。因而,即使是小尺寸的半导体芯片3,也能不产生焊锡扩散引起的各种问题地实现对岛5的芯片焊接。
支撑体113配置于由银构成的薄膜108上。由于焊锡相对于银的湿润性较高,因此若在热处理时支撑体113熔融,则该熔融的支撑体113在形成有由银构成的薄膜108的范围扩散。因此,通过形成由银构成的薄膜108,能控制支撑体113的扩散,能确实地防止由焊锡扩散引起的各种问题。
另外,在岛5上,形成有从其上表面挖下的凹部107,支撑体113配置在凹部107内。由此,能将支撑体113稳定地配置在岛5上。
另外,由于在支撑体113上涂敷焊剂114,因此能防止支撑体113的表面氧化,并且在热处理时能提高支撑体113(焊锡)的湿润性。另外,由于半导体芯片3以及岛5的与焊剂114的接触部分通过焊剂114的作用而被洗净,因此,能进一步提高半导体芯片3与岛5的粘接性。
图6是表示岛以及支撑体的其它的构成的立体图。
图6所示的岛121能代替图1A所示的岛5来使用。
岛121形成为俯视四边形。在岛121形成有从其上表面挖成半球状的3个凹部122。各凹部122按照连结它们的线的内侧成为三角形的方式彼此空开间隔来进行配置。
在岛121的上表面,在俯视观察下包括形成有凹部122的部分的区域形成有由银构成的薄膜123。具体地,薄膜123在岛121上接合有半导体芯片3(参照图1A)的状态下,形成为和岛121中的与半导体芯片3的对置部分大致相同的尺寸。另外,在各凹部122的内面也形成有薄膜123。
在凹部122内的薄膜123上配置有支撑体124。支撑体124形成为具有与凹部122大致相同直径的球状。
在3个支撑体124上载置有半导体芯片3,进行热处理后,支撑体124熔融,通过其表面张力以及湿润性,支撑体124(焊锡)在形成有薄膜123的范围扩散。由此,半导体芯片3与岛121的对置部分的间隙被熔融的支撑体124填满,实现了半导体芯片3与岛121的接合。
图7是表示岛以及支撑体的又一其它的构成的立体图。
图7所示的岛131能代替图1A所示的岛5而使用。
岛131形成为俯视四边形。在岛131的上表面形成有由银构成的薄膜132。具体地,薄膜132在岛131上接合有半导体芯片3(参照图1A)的状态下,形成为和岛131中的与半导体芯片3的对置部分大致相同的尺寸。
在薄膜132上配置有2个支撑体133。支撑体133形成为俯视细长板状(丝带状),彼此空开间隔平行地延伸。
在2个支撑体133上载置有半导体芯片3,在进行热处理后,支撑体133熔融,通过其表面张力以及湿润性,支撑体133(焊锡)在形成有薄膜142的范围扩散。由此,半导体芯片3与岛131的对置部分的间隙被熔融的支撑体133填满,实现了半导体芯片3与岛121的接合。
另外,在本实施方式的半导体装置1中,应用了QFN(Quad FlatNon-leaded Package,方形扁平无引脚封装),但本实施方式也可以用在应用了SON(Small Outlined Non-leaded Package,小外型无引脚封装)等其它种类的无引脚封装的半导体装置。
另外,并不限于引脚的端面与密封树脂的侧面形成于同一面的所谓的单一类型,也可以将本实施方式用在应用了引脚从密封树脂的侧面突出的引脚切割类型的无引脚封装的半导体装置中。
进而,并不限于无引脚封装,也可以将本实施方式用在应用了QFP(Quad flat Package,四侧引脚扁平封装)等的由于引脚从密封树脂突出而具有外引脚的封装的半导体装置。
另外,作为半导体装置1,例示了引脚以及岛的背面从树脂封装的背面露出的所谓的表面安装型的半导体装置,但也可以将本实施方式用在引脚朝向树脂封装的侧方而延伸的树脂密封型的半导体装置。即,本实施方式能广泛应用在具有将半导体芯片接合于岛上的构造的半导体装置。
接下来,本发明基于实施例以及比较例来进行说明,但本发明并非被下面的实施例所限定。
1、实施例1
使用图8所示的毛细管,通过正常键合,在半导体芯片的表面的焊盘与引脚之间架设线径为25μm的金线。图8所示的毛细管T的尺寸为130μm,CD的尺寸为50μm。引线相对于引脚的上表面的进入角度为50°。
然后,使用扫描型电子显微镜(SEM:Scanning Electron Microscope),观察金线中与引脚的接合部分(针脚部)。在图9~图11示出此时的SEM图像。
如图9~图11所示,在该实施例1中,形成长度33μm的针脚部,确认了在该针脚部的附近不会产生裂缝等的缺陷。
2、实施例2
使用图12所示的毛细管,通过正常键合,在半导体芯片的表面与引脚之间架设线径25μm的金线。图12所示的毛细管的FA(Face Angle,面角)角为15°。引线相对于引脚的上表面的进入角度为50°。
然后,使用扫描型电子显微镜来观察金线中与引脚的接合部分(针脚部)。在图13、14示出此时的SEM图像。
如图13、14所示,在该实施例2中,形成有针脚部,其上表面与引脚的上表面所成的角度α为15°,确认了该针脚部的附近没有产生裂缝等的缺陷。
3、比较例
使用图15所示的毛细管,通过正常键合,在半导体芯片的表面的焊盘与引脚之间架设线径为25μm的金线。图15所示的毛细管的FA(FaceAngle)角为11°。引线相对于引脚的上表面的进入角度为50°。
然后,使用扫描型电子显微镜来观察金线中与引脚的接合部分(针脚部)。在图16示出此时的SEM图像。
如图16所示,在比较例中,确认了在针脚部的附近产生了裂缝。
<第2实施方式>
图17是本发明的第2实施方式所涉及的半导体装置的俯视图。在图17中,透过被树脂封装密封的各部件来用实线进行表示。图18是图17所示的剖切线A-A下的半导体装置的示意性的剖视图。在图18中省略了树脂封装的图示。另外,在该实施方式的说明中,相当于第1实施方式的各部的部分使用相同的参照符号。
半导体装置1具有在引脚架2上接合半导体芯片3,并用树脂封装4来密封它们的构造。半导体装置1(树脂封装4)的外形构成为扁平的长方体(在本实施方式中为俯视观察的正方形的六面图)。
引脚架2如图17所示,具备:俯视观察下配置在半导体装置1的中央部的冲模垫(岛)5、和配置在冲模垫5的周围的4个引脚6。引脚架2通过对金属薄板(例如铜薄板)进行穿孔而形成。
冲模垫5一体地具备中央部7和悬吊部8。中央部7在俯视观察下,其中心与树脂封装4的中心重合,形成为具有相对于树脂封装4的各边倾斜45°的4条边的俯视四边形。悬吊部8形成为从中央部7的各角部向与该角部相对的树脂封装4的侧面延伸的俯视四边形。中央部7的下表面在树脂封装4的背面露出。
引脚6在与冲模垫5的中央部7的各边相对的部分各配置1个。各引脚6形成为俯视梯形。更具体地,各引脚6具有:与冲模垫5的相对的边平行的边9、在树脂封装4的侧面上延伸的边10、与边10正交并与树脂封装4的侧面平行而延伸的边11、分别连接边9与边10、11的边12、13。各引脚6的下表面在树脂封装4的背面露出,作为用于与布线基板(未图示)连接的外部端子发挥功能。另外,各引脚6的具有边10的侧面在树脂封装4的侧面露出。
半导体芯片3以作为元件形成面的表面朝向上方的状态,其背面隔着导电性粘接剂(未图示)而与冲模垫5接合(芯片焊接)。半导体芯片3的厚度为200μm以上(在本实施方式中为230μm),在半导体芯片3的表面(详细地为后述的焊盘14的表面)与引脚6的上表面之间,存在与该半导体芯片3的厚度相应的高低差。
在半导体芯片3的表面形成有与形成在半导体芯片3的布线(未图示)电连接的5个焊盘14。4个焊盘14(下面称作“角部的焊盘14”)配置在半导体芯片3的各角部。剩下的一个焊盘14(下面称作“剩下的焊盘14”)与1个角部的焊盘14相邻而配置。
在各焊盘14接合有引线15的一端。各引线15的另一端与引脚6的上表面接合。具体地,一端接合在4个角部的焊盘的引线15的另一端分别与彼此不同的引脚6的上表面接合。一端接合在剩下的焊盘14的引线15的另一端与距该剩下的焊盘14最近的引脚6接合。由此,半导体芯片3介由引线15而与引脚6电连接。引线15的长度为400μm以下(本实施方式中为300~400μm)。
另外,剖切线A-A与从半导体芯片3的图17中的上端的角部的焊盘14延伸的引线15平行地延伸。剖切线A-A实际与该引线15重合,但为了能容易看到该引线15,图示在了从该引线15稍微偏离的位置。
各引线15通过正常键合而形成。即,在引线15的形成时(引线键合时),通过对保持在引线接合器的毛细管C(参照图34)的引线15的前端部施加电流,在该前端部形成FAB(Free Air Ball)。然后,通过毛细管C的移动,FAB被压到焊盘14。通过毛细管C对FAB的按压,FAB产生变形,从而如图18所示那样,在焊盘14上形成圆形年糕形状的球珠部16,实现了引线15的一端对焊盘14的接合(第一键合)。之后,将毛细管C从焊盘14向上方提高使之离开焊盘14规定的高度。然后,使毛细管C朝向引脚6的上表面,以相对于引脚6的上表面大于50°的倾斜角度移动,将引线15压到引脚6的上表面,进而扯掉。由此,引线15的另一端产生变形从而在引脚6上形成侧视楔型的针脚部17,实现了引线15的另一端对引脚6的接合(第二键合)。由此,引线15在焊盘14上具有球珠部16,在引脚6上具有针脚部17。
在第二键合时,通过毛细管C以相对于引脚6的上表面大于50°的倾斜角度移动,能使得引线15相对于引脚6的上表面的进入角度、即引线15的针脚部17侧的端部与引线6的上表面所成的角度β为50°以上。
并且,在半导体装置1中,针脚部17的长度(引线15与引脚6的接触部分沿着引线15的方向的长度)L为33μm以上。另外,针脚部17的上表面与引脚6的上表面所成的角度α为15°以上。
由此,即使引线15相对于引脚6的上表面的进入角度为50°以上,也能不在引线15的针脚部17的附近产生裂缝地实现引线15对引脚6的良好的接合。另外,即使引线15的长度为400μm以下,且半导体芯片3的表面与引脚6的上表面的高低差为200μm以上,也能不在引线15的针脚部17的附近产生裂缝地实现引线15对引脚6的良好的接合。
另外,在本实施方式的半导体装置1中,应用了QFN(Quad FlatNon-leaded Package,方形扁平无引脚封装),但本实施方式也可以用在应用了SON(Small Outlined Non-leaded Package,小外型无引脚封装)等其它种类的无引脚封装的半导体装置。
另外,并不限于引脚的端面与密封树脂的侧面形成于一面的所谓的单一类型,也可以将本实施方式用在应用了引脚从密封树脂的侧面突出的引脚切割类型的无引脚封装的半导体装置中。
进而,并不限于无引脚封装,也可以将本实施方式用在应用了QFP(Quad flat Package)等的由于引脚从密封树脂突出而具有外引脚的封装的半导体装置。
接下来,基于实施例以及比较例来说明本发明,本发明并不被以下的实施例所限定。
1、实施例1
使用图19所示的毛细管,通过正常键合,在半导体芯片的表面的焊盘与引脚之间架设线径为25μm的金线。图19所示的毛细管的尺寸T为130μm,CD的尺寸为50μm。引线相对于引脚的上表面的进入角度为50°。
然后,使用扫描型电子显微镜(SEM:Scanning Electron Microscope),观察金线中与引脚的接合部分(针脚部)。在图20~图22示出此时的SEM图像。
如图20~图22所示,在该实施例1中,形成长度33μm的针脚部,确认了在该针脚部的附近不会产生裂缝等的缺陷。
2、实施例2
使用图23所示的毛细管,通过正常键合,在半导体芯片的表面的焊盘与引脚之间架设线径25μm的金线。图23所示的毛细管的FA(FaceAngle,面角)角为15°。引线相对于引脚的上表面的进入角度为50°。
然后,使用扫描型电子显微镜来观察金线中与引脚的接合部分(针脚部)。在图24、25示出此时的SEM图像。
如图24、25所示,在该实施例2中,形成有针脚部,其上表面与引脚的上表面所成的角度为15-,确认了该针脚部的附近没有产生裂缝等的缺陷。
3、比较例
使用图26所示的毛细管,通过正常键合,在半导体芯片的表面的焊盘与引脚之间架设线径为25μm的金线。图26所示的毛细管的FA(FaceAngle)角为11°。引线相对于引脚的上表面的进入角度为50°。
然后,使用扫描型电子显微镜来观察金线中与引脚的接合部分(针脚部)。在图27示出此时的SEM图像。
如图27所示,在比较例中,确认了在针脚部的附近产生了裂缝。
<第3实施方式>
图28是本发明的第3实施方式所涉及的半导体装置的示意性的俯视图。图29是表示从图28所示的半导体装置中省略了半导体芯片、引线以及焊锡粘接剂的状态的示意性的俯视图。图30是表示用剖切线B-B剖切图28所示的半导体装置时的示意性的剖视图。另外,在该实施方式的说明中,相当于第1以及第2实施方式的各部的部分使用相同的参照符号。
半导体装置1具有用树脂封装4来密封半导体芯片3与引脚架2的构造。半导体装置1的外形构成为扁平的长方体(在本实施方式中为俯视观察的正方形的六面体)。
引线架2由铜(Cu)等金属材料构成,具备配置在岛5、和配置在岛5的周围的4个引脚6。
岛5形成为俯视四边形(在本实施方式中为俯视正方形)。岛5的下表面在树脂封装4的背面露出。在岛5,形成有从其上表面向下挖的2个(1对)的槽状的凹部107(参照图29)。各凹部107形成为半圆形截面,与岛5的面对面的2条边平行地延伸。在岛5的上表面,在俯视观察包括形成有凹部107的部分的区域,形成有由银(Ag)构成的薄膜108(参照图2A)。具体地,如图28所示,薄膜108在将半导体芯片103接合在岛5上的状态下,被形成为和岛5中与半导体芯片3的对置部分大致相同的尺寸。
引脚6在俯视观察下,配置于分别于岛5的4条边相对的部分。各引脚6形成为俯视三角形。各引脚6的下表面在树脂封装4的背面露出,作为与布线基板(未图示)的连接用的外部端子发挥作用。
如图30所示,半导体芯片3以形成有功能元件一侧的表面(设备形成面)朝向上方的状态,其背面隔着导电性的焊锡粘接剂109而与岛5接合(芯片焊接)。在半导体芯片3的背面,披覆有用于提高焊锡接合剂109和半导体芯片3之间的粘接性的金属膜115。金属膜115例如是通过从半导体芯片3侧依次层叠Au(金)、Ni(镍)、Ag以及Au而形成的层叠膜。
在焊锡接合剂109的周缘部、即半导体芯片3与岛5的接合部分的侧方,附着有固化成树脂状的固化焊剂110。
在半导体芯片3的表面,与各引脚对应,通过使布线层的一部分从表面保护膜露出而形成焊盘14。在各焊盘14连接有键合引线15的一端。键合引线15的另一端与各引脚6的上表面接合。由此,半导体芯片3介由键合引线15而与引脚6电连接。
另外,剖切线B-B与从半导体芯片3在图28中的下端的焊盘14延伸的引线15、和从图28中的右端焊盘14的左邻焊盘14延伸的引线15两者平行地延伸。剖切线B-B实际与这些引线15重合,但为了能容易看到这些引线15,图示在了从这些引线15稍微偏离的位置。
图31A~图31E是用于依次说明图28所示的半导体装置的制造工序的示意性的剖视图。另外,在图31A~图31E中,省略引脚6以及键合引线15等的图示。
首先,准备具备形成有凹部107的岛5的引脚架2。引脚架2例如通过对铜薄板进行加压加工以及打穿加工而形成。并且,如图31A所示,通过镀敷法或溅射法在岛5上形成由银构成的薄膜108。此时,在凹部107的内面也形成有薄膜108。
接下来,如图31(B)所示,在凹部107内的薄膜108上配置由固体的焊锡构成的支撑体113。支撑体113在俯视观察下形成为与凹部107大致相同的形状,截面为圆形。
之后,如图31(C)所示,在支撑体113上涂敷焊剂114。可以将焊剂114一起涂敷在岛5的上表面的全部区域,也可以选择性地涂敷在支撑体113中从凹部107露出的部分。
接下来,如图31D所示,在支撑体113上载置半导体芯片3。由此,半导体芯片3被支撑体113所支撑。
然后,例如,在支撑体113为铅焊锡的情况下,通过在340℃的温度条件下进行30sec的热处理,如图31E所示,支撑体113熔融,通过其表面张力以及湿润性而在形成有薄膜108的范围扩散支撑体113。由此,半导体芯片3与岛5的对置部分的间隙被熔融的支撑体113(焊锡接合剂109)填满,实现了半导体芯片3与岛5的接合。另外,此时,焊剂114将半导体芯片3的下表面(金属膜115的表面)以及岛5的上表面洗净,并在半导体芯片3的侧方凝集并固化,成为固化焊剂110。
之后,在半导体芯片3与引脚6之间架设键合引线15,通过按照仅露出岛5以及引脚6的背面的方式来形成树脂封装4,获得图28~30所示的半导体装置1。
如以上那样,在热处理时,通过焊锡所具有的表面张力以及湿润性,熔融的焊锡在半导体芯片3与岛5之间扩散。因此,与在半导体芯片3与岛5的接合中使用膏状的接合剂的方法不同,在将半导体芯片3对岛5进行接合时,不需要对半导体芯片3施加荷重。通过不对半导体芯片3施加荷重,能防止由该荷重引起的焊锡的扩散。另外,通过按照半导体芯片3的尺寸来改变支撑体113的大小、形状以及数量,不管半导体芯片3的尺寸多大,都能在半导体芯片3与岛5之间不产生较大的焊锡溢出地来接合半导体芯片3与岛5。因而,即使是小尺寸的半导体芯片3,也能不产生焊锡扩散引起的各种问题地实现对岛5的芯片焊接。
支撑体113配置于由银构成的薄膜108上。由于焊锡相对于银的湿润性较高,因此若在热处理时支撑体113熔融,则该熔融的支撑体113在形成有由银构成的薄膜108的范围扩散。因此,通过形成由银构成的薄膜108,能控制支撑体113的扩散,能确切地防止由焊锡扩散引起的各种问题。
另外,在岛5上形成有从其上表面挖下的凹部107,支撑体113配置在凹部107内。由此,能将支撑体113稳定地配置在岛5上。
另外,由于在支撑体113上涂敷焊剂114,因此能防止支撑体113的表面氧化,并且在热处理时能提高支撑体113(焊锡)的湿润性。另外,由于半导体芯片3以及岛5中与焊剂114的接触部分通过焊剂114的作用而被洗净,因此,能进一步提高半导体芯片3与岛5的粘接性。
图32是表示岛以及支撑体以及其它的构成的立体图。
图32所示的岛121能代替图28所示的岛5来使用。
岛121形成为俯视四边形。在岛121形成有从其上表面挖成半球状的3个凹部122。各凹部122按照连结它们的线的内侧成为三角形的方式彼此空开间隔来进行配置。
在岛121的上表面,在俯视观察下包括形成有凹部122的部分的区域形成有由银构成的薄膜123。具体地,薄膜123在岛121上接合有半导体芯片3(参照图28)的状态下,形成为和岛121中与半导体芯片3对置的部分大致相同的尺寸。另外,在各凹部122的内面也形成有薄膜123。
在凹部122内的薄膜123上配置有支撑体124。支撑体124形成为具有与凹部122大致相同的直径的球状。
在3个支撑体124上载置有半导体芯片3,进行热处理后,支撑体124熔融,通过其表面张力以及湿润性,支撑体124(焊锡)在形成有薄膜123的范围扩散。由此,半导体芯片3与岛121的对置部分的间隙被熔融的支撑体124填满,实现了半导体芯片3与岛121的接合。
图33是表示岛以及支撑体的又一其它构成的立体图。
图33所示的岛131能代替图28所示的岛5而使用。
岛131形成为俯视四边形。在岛131的上表面形成由银构成的薄膜132。具体地,薄膜132在岛131上接合有半导体芯片3(参照图28)的状态下,形成为和岛131中与半导体芯片3对置的部分大致相同的尺寸。
在薄膜132上配置有2个支撑体133。支撑体133形成为俯视细长板状(丝带状),彼此空开间隔平行地延伸。
在2个支撑体133上载置有半导体芯片3,在进行热处理后,支撑体133熔融,通过其表面张力以及湿润性,支撑体133(焊锡)在形成有薄膜142的范围内扩散。由此,半导体芯片3与岛131的对置部分的间隙被熔融的支撑体133填满,实现了半导体芯片3与岛121的接合。
另外,作为半导体装置1,例示了引脚以及岛的背面从树脂封装的背面露出的所谓的表面安装型的半导体装置,但也可以将本实施方式用在引脚朝向树脂封装的侧方而延伸的树脂密封型的半导体装置。即,本实施方式能广泛应用在具有将半导体芯片接合于岛上的构造的半导体装置。
关于本发明的实施方式进行了详细的说明,但这不过是为了明确本发明的技术内容而使用的具体例而已,本发明不应当限定在这些具体例来进行解释,本发明的精神以及范围仅通过附加的权利要求书来限定。
本申请与2009年9月11日向日本特许厅提出的特愿2009-210776号、2009年9月16日向日本特许厅提出的特愿2009-214925号对应,这些申请的全部公开在此通过引用而被引入。
符号的说明
1半导体装置
3半导体芯片
5岛
6引脚
14焊盘
15引线
16球珠部
17针脚部
107凹部
108薄膜
109焊锡接合剂
110固化焊剂(焊剂)
113支撑体
114焊剂
121岛
122凹部
123薄膜
124支撑体
131岛
132薄膜
133支撑体
Claims (20)
1.一种半导体装置,其特征在于,包括:
半导体芯片;
引脚,其配置于所述半导体芯片的侧方;和
引线,其一端以及另一端分别与所述半导体芯片以及所述引脚接合,并在所述半导体芯片以及所述引脚上分别具有球珠部以及侧视楔形的针脚部,
所述引线相对于所述引脚的进入角度为50°以上,
所述针脚部的长度为33μm以上。
2.一种半导体装置,其特征在于,包括:
半导体芯片;
引脚,其配置于所述半导体芯片的侧方;和
引线,其一端以及另一端分别与所述半导体芯片以及所述引脚接合,并在所述半导体芯片以及所述引脚上分别具有球珠部以及侧视楔形的针脚部,
所述引线相对于所述引脚的进入角度为50°以上,
所述针脚部的上表面与所述引脚的上表面所呈的角度为15°以上。
3.根据权利要求2所述的半导体装置,其特征在于,
所述针脚部的长度为33μm以上。
4.一种半导体装置,其特征在于,包括:
半导体芯片;
引脚,其配置于所述半导体芯片的侧方;和
引线,其一端以及另一端分别与所述半导体芯片以及所述引脚接合,并在所述半导体芯片以及所述引脚上分别具有球珠部以及侧视楔形的针脚部,
所述引线的长度为400μm以下,
所述半导体芯片中的所述球珠部的接合部分与所述引脚中的所述针脚部的接合部分之间的高低差为200μm以上,
所述针脚部的长度为33μm以上。
5.一种半导体装置,其特征在于,包括:
半导体芯片;
引脚,其配置于所述半导体芯片的侧方;和
引线,其一端以及另一端分别与所述半导体芯片以及所述引脚接合,并在所述半导体芯片以及所述引脚上分别具有球珠部以及侧视楔形的针脚部,
所述引线的长度为400μm以下,
所述半导体芯片中的所述球珠部的接合部分与所述引脚中的所述针脚部的接合部分之间的高低差为200μm以上,
所述针脚部的上表面与所述引脚的上表面所呈的角度为15°以上。
6.根据权利要求5所述的半导体装置,其特征在于,
所述针脚部的长度为33μm以上。
7.根据权利要求1~6中任一项所述的半导体装置,其特征在于,
所述半导体装置还包括:
岛,其上表面接合有所述半导体芯片;和
焊锡接合剂,其由焊锡构成,且介于所述半导体芯片和所述岛之间使所述半导体芯片和所述岛接合,
在所述焊锡接合剂中附着有焊剂。
8.根据权利要求7所述的半导体装置,其特征在于,
在所述岛上形成有从其上表面向下深挖而成的凹部。
9.根据权利要求7所述的半导体装置,其特征在于,
所述岛在俯视图中为四边形,
在所述岛的上表面,按照分别沿着与四边形的所述岛的相对置的2条边而延伸的方式,形成有向下深挖而成的1对槽状的凹部。
10.根据权利要求8或9所述的半导体装置,其特征在于,
所述凹部的截面是半圆形。
11.根据权利要求8所述的半导体装置,其特征在于,
所述凹部为半球形。
12.一种半导体装置的制造方法,其特征在于,包括:
支撑体配置工序,在岛上配置由固体的焊锡构成的支撑体;
芯片支撑工序,在所述支撑体配置工序后,在所述支撑体上载置半导体芯片,使所述支撑体支撑所述半导体芯片;和
接合工序,在所述芯片载置工序后,通过热处理,使所述支撑体熔融来接合所述岛和所述半导体芯片。
13.根据权利要求12所述的半导体装置的制造方法,其特征在于,
在所述支撑体配置工序前,还包括:在所述岛上形成由银构成的薄膜的工序,
在所述支撑体配置工序中,在所述薄膜上配置所述支撑体。
14.根据权利要求12或13所述的半导体装置的制造方法,其特征在于,
在所述岛中形成有从所述岛的上表面向下深挖而成的凹部,
在所述支撑体配置工序中,在所述凹部内配置所述支撑体。
15.根据权利要求12~14中任一项所述的半导体装置的制造方法,其特征在于,
在所述支撑体配置工序后、所述芯片支撑工序前,还包括将焊剂涂敷在所述支撑体的焊剂涂敷工序。
16.一种半导体装置,其特征在于,包括:
半导体芯片;
岛,其上表面接合有所述半导体芯片;和
焊锡接合剂,其由焊锡构成,且介于所述半导体芯片和所述岛之间使所述半导体芯片和所述岛接合,
在所述焊锡接合剂中附着有焊剂。
17.根据权利要求16所述的半导体装置,其特征在于,
在所述岛形成有从其上表面向下深挖而成的凹部。
18.根据权利要求16所述的半导体装置,其特征在于,
所述岛在俯视图中为四边形,
在所述岛的上表面,按照分别沿着与四边形的所述岛的相对置的2条边而延伸的方式,形成有向下深挖而成的1对槽状凹部。
19.根据权利要求17或18所述的半导体装置,其特征在于,
所述凹部的截面是半圆形。
20.根据权利要求17所述的半导体装置,其特征在于,
所述凹部是半球形。
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PCT/JP2010/065652 WO2011030867A1 (ja) | 2009-09-11 | 2010-09-10 | 半導体装置およびその製造方法 |
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- 2010-09-10 CN CN2010800396780A patent/CN102484083A/zh active Pending
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2016
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TWI573235B (zh) | 2017-03-01 |
JP6035656B2 (ja) | 2016-11-30 |
US20170084569A1 (en) | 2017-03-23 |
US20180068972A1 (en) | 2018-03-08 |
US9543239B2 (en) | 2017-01-10 |
WO2011030867A1 (ja) | 2011-03-17 |
JP5629264B2 (ja) | 2014-11-19 |
US9293435B2 (en) | 2016-03-22 |
US20160181186A1 (en) | 2016-06-23 |
JPWO2011030867A1 (ja) | 2013-02-07 |
US9837373B2 (en) | 2017-12-05 |
TW201125088A (en) | 2011-07-16 |
JP2015026857A (ja) | 2015-02-05 |
US20120168946A1 (en) | 2012-07-05 |
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