JP2004207292A - ワイヤボンディング方法、半導体装置及びその製造方法、回路基板並びに電子機器 - Google Patents

ワイヤボンディング方法、半導体装置及びその製造方法、回路基板並びに電子機器 Download PDF

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JP2004207292A
JP2004207292A JP2002371382A JP2002371382A JP2004207292A JP 2004207292 A JP2004207292 A JP 2004207292A JP 2002371382 A JP2002371382 A JP 2002371382A JP 2002371382 A JP2002371382 A JP 2002371382A JP 2004207292 A JP2004207292 A JP 2004207292A
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wire
electrode
region
bent portion
lead
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Takahiro Imai
隆浩 今井
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Seiko Epson Corp
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Seiko Epson Corp
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Abstract

【課題】簡単な工程でかつ信頼性の高いワイヤボンディングを実現することにある。
【解決手段】ワイヤボンディング方法は、（ａ）ワイヤ５０の先端部５２を第１の領域１２にボンディングすること、（ｂ）ワイヤ５０を第１の領域１２から第２の領域２２の方向に引き出すとともに、第２の領域２２の上方にワイヤ５０の屈曲部５６を形成すること、（ｃ）屈曲部５６を溶融させることで、ワイヤ５０の塊部６６を形成すること、（ｄ）塊部６６を第２の領域２２にボンディングすることを含む。
【選択図】 図２

Description

【０００１】
【発明の属する技術分野】
本発明は、ワイヤボンディング方法、半導体装置及びその製造方法、回路基板並びに電子機器に関する。
【０００２】
【発明の背景】
半導体装置のワイヤボンディング工程では、ワイヤの塊状の先端部を第１の領域にボンディングし、第１の領域から引き出したワイヤの一部を第２の領域にボンディングする。この場合、第２の領域のボンディングを良好に行うため、あらかじめ第２の領域にバンプを形成し、当該バンプを介してボンディングを行うことが知られている。しかし、これによれば、ワイヤボンディングするたびにバンプの形成工程が必要になるので工程が煩雑になる。
【０００３】
一方で、第１の領域から引き出したワイヤの一部を溶融させて、ワイヤの途中の所定部分を塊状にし、当該所定部分を第２の領域にボンディングすることが知られている。しかし、これによれば、ワイヤの当該所定部分の周辺が再結晶化するので、ワイヤのループ形状が固定されてしまい、例えば、基板のリードと、基板上の半導体チップの電極とをワイヤボンディングするときに、ワイヤが半導体チップのエッジに接触することがあった。
【０００４】
本発明の目的は、簡単な工程でかつ信頼性の高いワイヤボンディングを実現することにある。
【０００５】
【課題を解決するための手段】
（１）本発明に係るワイヤボンディング方法は、（ａ）ワイヤの先端部を第１の領域にボンディングすること、
（ｂ）前記ワイヤを前記第１の領域から第２の領域の方向に引き出すとともに、前記第２の領域の上方に前記ワイヤの屈曲部を形成すること、
（ｃ）前記屈曲部を溶融させることで、前記ワイヤの塊部を形成すること、
（ｄ）前記塊部を前記第２の領域にボンディングすることを含む。本発明によれば、第２の領域の上方にワイヤの屈曲部を形成し、屈曲部を溶融させてワイヤの塊部を形成し、塊部を第２の領域にボンディングする。これによって、ワイヤの切断工程を行うことなく、複数の領域を連続してワイヤボンディングすることができる。また、ワイヤの塊部をボンディングするので、第２の領域へのバンプの形成工程を省略するとともに、良好にボンディングを行うことができる。さらに、ワイヤの屈曲部を形成した後に塊部を形成するので、塊部からのワイヤの引き出し角度を自由に決定することが可能になる。したがって、簡単な工程でかつ信頼性の高いワイヤボンディングを実現できる。
（２）このワイヤボンディング方法において、
前記（ｂ）工程で、前記ワイヤを前記第２の領域から離れるように上方向に折り返すことで、前記屈曲部を形成してもよい。
（３）このワイヤボンディング方法において、
前記（ｂ）工程で、前記ワイヤの一部を前記第２の領域に接触させた状態で、前記屈曲部を形成してもよい。これによれば、ワイヤの一部を第２の領域に押し当てて屈曲部を形成しやすくすることができる。
（４）このワイヤボンディング方法において、
前記（ｂ）工程で、溶融後の前記ワイヤのうち前記塊部から連続する部分が上方向に立ち上げ形成されるように、前記屈曲部を形成してもよい。これによって、例えば、複数のワイヤ同士のショートを回避することができる。
（５）このワイヤボンディング方法において、
前記（ｃ）工程で、前記屈曲部を再結晶化させてもよい。
（６）このワイヤボンディング方法において、
前記（ｄ）工程後に、前記ワイヤを前記第２の領域から第３の領域の方向に引き出すことをさらに含んでもよい。
（７）本発明に係る半導体装置の製造方法は、リードと、積層される複数の半導体チップと、をワイヤボンディングする半導体装置の製造方法であって、
ワイヤの先端部を前記リードにボンディングすること、
前記ワイヤを前記リードからいずれかの半導体チップの第１の電極の方向に引き出すとともに、前記第１の電極の上方に前記ワイヤの屈曲部を形成すること、
前記屈曲部を溶融させることで、前記ワイヤの塊部を形成すること、
前記塊部を前記第１の電極にボンディングすること、
前記ワイヤを前記第１の電極から他の半導体チップの第２の電極の方向に引き出し、前記ワイヤの一部を前記第２の電極にボンディングすることを含む。本発明によれば、第１の電極の上方にワイヤの屈曲部を形成し、屈曲部を溶融させてワイヤの塊部を形成し、塊部を第１の電極にボンディングする。これによって、ワイヤの切断工程を行うことなく、複数の領域を連続してワイヤボンディングすることができる。また、ワイヤの塊部をボンディングするので、第１の電極へのバンプの形成工程を省略するとともに、良好にボンディングを行うことができる。さらに、ワイヤの屈曲部を形成した後に塊部を形成するので、塊部からのワイヤの引き出し角度を自由に決定することが可能になる。したがって、簡単な工程でかつ信頼性の高いワイヤボンディングを実現できる。
（８）本発明に係る半導体装置は、リードと、
前記リードにワイヤを介して電気的に接続されるとともに、積層された複数の半導体チップと、
を含み、
前記ワイヤは、前記リードといずれかの前記半導体チップの第１の電極とを結線する第１のループと、前記第１の電極と他の前記半導体チップの第２の電極とを結線する第２のループと、前記第１の電極上で前記第１及び第２のループと一体化してなるバンプと、を含み、
前記第１のループのうち前記バンプから連続する部分は、前記バンプから上方向に立ち上げ形成されてなる。本発明によれば、信頼性の高い半導体装置を提供することができる。
（９）本発明に係る回路基板には、上記半導体装置が実装されている。
（１０）本発明に係る電子機器は、上記半導体装置を有する。
【０００６】
【発明の実施の形態】
以下、本発明の実施の形態について図面を参照して説明する。図１〜図５は、本発明を適用した実施の形態に係る半導体装置の製造方法（ワイヤボンディング方法を含む）を示す図であり、図６は本実施の形態に係る半導体装置を示す図である。図７は図２のワイヤの屈曲部の拡大図であり、図８及び図９は本実施の形態の変形例を説明する図である。本実施の形態に係る半導体装置の製造方法は、ワイヤボンディング方法を含む。本実施の形態に係るワイヤボンディング方法は、半導体装置の製造以外に適用してもよい。
【０００７】
図１に示すように、リード１２と、積層される複数の半導体チップ（第１及び第２の半導体チップ２０，３０を含む）と、を用意する。本実施の形態では、リード１２は基板１０に形成されている。
【０００８】
基板１０は、板状の基材である。基板１０は、半導体パッケージ用のインターポーザであってもよいし、他の電子部品とともに実装される回路基板（マザーボード）であってもよい。基板１０は、有機系又は無機系のいずれの材料で形成してもよい。基板１０には、複数のリード１２によって配線パターンが形成されている。リード１２は、電気的な接続部（例えばランド）を有する。リード１２は、例えば、銅（Ｃｕ）、クロム（Ｃｒ）、チタン（Ｔｉ）、ニッケル（Ｎｉ）、チタンタングステン（ＴｉＷ）、金（Ａｕ）、アルミニウム（Ａｌ）、ニッケルバナジウム（ＮｉＶ）、タングステン（Ｗ）のうちの一層又は複数層によって形成してもよく、ハンダ、スズ、金、ニッケルなどでメッキされていることが好ましい。
【０００９】
変形例として、リード１２は、図示しないリードフレームの一部であってもよい。リードフレームは、銅系又は鉄系の板材を加工して形成される。複数の半導体チップ２０，３０は、リードフレームのダイパッドに搭載されてもよい。複数のリード１２は、ダイパッドに向けて延びている。
【００１０】
本実施の形態では、第１及び第２の半導体チップ２０，３０を積層するが、３つ以上の半導体チップを積層してもよい。第１の半導体チップ２０には、図示しない集積回路が形成されている。第１の半導体チップ２０には、複数の第１の電極２２が形成されている。第１の電極２２は、第１の半導体チップ２０の、集積回路となる複数の素子を形成する側の面（最も広い面）に配置してもよい。複数の第１の電極２２は、第１の半導体チップ２０の外周端部に形成されてもよい。第１の電極２２は、薄く平らに形成されるパッドであってもよい。パッドは、内部の集積回路と電気的に接続され、アルミニウム系又は銅系の金属で形成される。図１に示す例とは別に、パッドにバンプが形成されてもよく、その場合、第１の電極２２は、パッド及びバンプを含む。なお、第１の半導体チップ２０には、第１の電極２２の形成された面に、図示しないパッシベーション膜（例えばＳｉＯ2、ＳｉＮ、ポリイミド樹脂からなる膜）が形成されている。
【００１１】
第１の半導体チップ２０は、第１の電極２２の形成された面とは反対の面が基板１０を向くように搭載されている（フェースアップ実装）。第１の半導体チップ２０上に第２の半導体チップ３０を積層する場合、第２の半導体チップ３０の外形（平面形状）は第１の半導体チップ２０の外形よりも小さいほうが好ましい。こうすることで、第２の半導体チップ３０を、複数の第１の電極２２を避けて搭載することができる。第２の半導体チップ３０のその他の内容は、第１の半導体チップ２０と同様であってもよい。第１及び第２の半導体チップ２０，３０は、接着材料によって基板１０に固定されてもよい。
【００１２】
本実施の形態では、リード１２、第１の電極２２及び第２の電極３２を、ワイヤ５０によって電気的に接続する。詳しくは、ワイヤ５０を、リード１２（第１の領域）、第１の電極２２（第２の領域）、第２の電極３２（第３の領域）の順番に結線する。本実施の形態では、いわゆるリバースボンディングを行う。変形例として、ワイヤ５０を、第２の電極３２、第１の電極２２、リード１２の順番に結線してもよい。
【００１３】
ワイヤ５０は、金などの導電材料で形成されている。ワイヤ５０は、ツール４０によって支持されている。ツール４０は、ワイヤ５０の軸方向がリード１２の面に対して垂直になるように、ワイヤ５０を支持する。図１に示す例では、ツール４０は穴４２を有し、穴４２の内側にワイヤ５０が挿通されている。ツール４０は、半導体装置の製造に使用されるキャピラリであってもよい。ツール４０は、図示しない支持体（例えば超音波ホーン）によって、図示しない製造装置の本体（ワイヤボンダー）に支持されている。
【００１４】
ワイヤ４０は、クランパ４６によって保持される。クランパ４６は、ツール４０の上方、すなわちリード１２とは反対側に配置される。クランパ４６を閉じることによって、ワイヤ５０を保持することができる。
【００１５】
ワイヤ５０の先端部５２は、穴４２の開口部からリード１２側の外部に突出している。そして、穴４２の開口端部（又は押圧部）４４は、ワイヤ５０の外部に突出する部分（例えば先端部５２）を押圧できるようになっている。
【００１６】
図１に示すように、ツール４０を、基板１０のリード１２側（詳しくはリード１２の上方）に配置する。そして、ワイヤ５０の先端部５２を塊状（又はボール状）に形成する。熱エネルギー（例えば放電又はガス炎）によって、先端部５２を溶融させて塊状に形成してもよい。例えば、図示しない電気トーチを先端部５２に接近させ、高電圧の放電を行い、先端部５２を溶融させてもよい。
【００１７】
クランパ４６を開放して、ツール４０を下降させる。こうして、ワイヤ５０の先端部５２をリード１２にボンディングする。詳しくは、ツール４０の開口端部４４によって、ワイヤ５０の先端部５２を押圧する。先端部５２を押圧する間に超音波振動や熱等を加えることが好ましい。こうすることで、先端部５２（バンプ５４）とリード１２とを良好な状態で接合することができる。
【００１８】
次に、ワイヤ５０をリード１２から第１の電極２２の方向に引き出す。詳しくは、ワイヤ５０の一部を、リード１２に接合された先端部５２（バンプ５４）から上方に引き出し、第１の電極２２の方向にループさせる。ワイヤ５０のループの頂点は、第１の半導体チップ２０よりも高くなるように設定する。そして、ワイヤ５０をループの頂点から下方（図２では斜め下方）に引き出して、第１の電極２２に近づける。
【００１９】
第１の電極２２の上方にワイヤ５０の屈曲部５６（図２の２点鎖線で囲まれた部分）を形成する。屈曲部５６は、ツール４０の先端を所定の軌跡に動かすことで形成する。ワイヤ５０の軸線と、第１の電極２２の面とのなす角度を必要に応じて変化させてもよい。
【００２０】
図７は、ワイヤの屈曲部の拡大図である。図７に示すように、屈曲部５６は、ワイヤ５０を第１の電極２２から離れるように上方向に折り返すことで形成してもよい。例えば、リード１２から第１の電極２２の方向に形成するループとは逆ループを描くように屈曲させてもよい。
【００２１】
図７に示す例では、屈曲部５６は、連続して形成される第１〜第３の部分５８，６０，６２で構成されている。第１の部分５８は、ループの頂点から下方に引き出される部分である。第２の部分は、第１の電極２２に最接近する部分である。第３の部分６２は、第２の部分６０から上方に折り返される部分である。
【００２２】
図７に示すように、第１の部分５８は、リード１２側から斜め下方に傾斜してもよい。第１の部分５８は、滑らかな曲線の一部を描いてもよい。ただし、後述するように、溶融後の塊部６６から連続する部分６４が仮想直線Ｌよりも上方向に立ち上げ形成されるように、第１の部分５８の角度を調整することが好ましい（図３参照）。あるいは、第１の部分５８は、第１の電極２２の面に対してほぼ垂直方向に引き出されてもよい。
【００２３】
図７に示す例では、第２の部分６０は、第１の電極２２と非接触になっている。すなわち、屈曲部５６を第１の電極２２に接触させないで形成してもよい。
【００２４】
第３の部分６２は、リード１２側（第１の部分５８側）に戻るように屈曲させてもよい。あるいは、ワイヤ５０の軸線をリード１２側に倒れるように傾斜させてもよい。こうすることで、ワイヤ５０に元の形状に戻る向きの応力（スプリングバック）が加わっても、あらかじめ余分に屈曲又は傾斜させているので、第２の電極３２側の塊部６６から連続する部分６５を第１の電極２２からほぼ垂直に立ち上げ形成することができる（図３参照）。したがって、ワイヤ５０の第１の電極２２から第２の電極３２までのループを、第２の半導体チップ３０とのショートを回避しつつ形成することができる。
【００２５】
図８の変形例に示すように、第１の部分１５８を、ワイヤ１５０が第１の電極２２の中央部から端部に戻るように屈曲させてもよい。こうすることで、上述の第３の部分６２と同様に、ワイヤ１５０のリード１２側に延びる部分を第１の電極２２から立ち上げて形成することができる。
【００２６】
図９の変形例に示すように、第２の部分６０は、第１の電極２２に接触してもよい。すなわち、ワイヤ５０の一部を第１の電極２２に接触させた状態で、屈曲部５６を形成してもよい。これによれば、ワイヤ５０の一部を押し当てて屈曲部５６を形成しやすくすることができる。
【００２７】
図２に示すように、屈曲部５６を溶融させる。例えば、電気トーチ４８を屈曲部５６に接近させ、高電圧の放電を行い、屈曲部５６を溶融させてもよい。図２に示すように、屈曲部５６を第１の電極２２に非接触にしていれば、第１の電極２２の熱エネルギーによる影響が少ないので好ましい。
【００２８】
こうして、図３に示すように、ワイヤ５０の塊部６６を形成する。塊部６６は、屈曲部５６の少なくとも一部から形成される。溶融後のワイヤ５０は、塊部６６から連続する部分６４，６５が仮想直線Ｌよりも上方向に延びていることが好ましい。これによって、複数のワイヤ５０同士又はワイヤ５０と半導体チップとの電気的なショートを回避することができる。仮想直線Ｌとは、第１の電極２２（又は第１の半導体チップ２０）の面と平行な直線である。
【００２９】
屈曲部５６を再結晶化させて、塊部６６を形成してもよい。図３では、ワイヤ５０のうち再結晶化した部分に斜線のハッチングが付されている。再結晶化した部分は後に形状を変更することはできないが、本実施の形態では、再結晶化するのと同時にワイヤ５０が所望の形状になる。
【００３０】
図４に示すように、ワイヤ５０の塊部６６を第１の電極２２にボンディングする。詳細は、リード１２のボンディングにおいて説明した内容が該当する。こうして、第１の電極２２にバンプ６８（塊部６６）を設ける。
【００３１】
次に、ワイヤ５０を第１の電極２２から第２の電極３２の方向に引き出す。そして、図５に示すように、ワイヤ５０の一部を第２の電極３２にボンディングする。詳細は、リード１２から第１の電極２２にボンディングするまでの工程において説明した内容が該当する。
【００３２】
本実施の形態に係る半導体装置の製造方法によれば、第１の電極２２の上方にワイヤ５０の屈曲部５６を形成し、屈曲部５６を溶融させてワイヤ５０の塊部６６を形成し、塊部６６を第１の電極２２にボンディングする。これによって、ワイヤ５０の切断工程を行うことなく、複数の電極（例えばリード１２、第１及び第２の電極２２，３２）を連続してワイヤボンディングすることができる。また、ワイヤ５０の塊部６６をボンディングするので、第１の電極２２へのバンプの形成工程を省略するとともに、良好にボンディングを行うことができる。さらに、ワイヤ５０の屈曲部５６を形成した後に塊部６６を形成するので、塊部６６からのワイヤ５０の引き出し角度を自由に決定することが可能になる。したがって、簡単な工程でかつ信頼性の高いワイヤボンディングを実現できる。
【００３３】
本実施の形態に係る半導体装置（スタック型半導体装置）は、リード１２と、ワイヤ５０を介してリード１２に電気的に接続された複数の半導体チップ（第１及び第２の半導体チップ２０，３０）と、を含む。
【００３４】
図５に示すように、ワイヤ５０は、第１及び第２のループ７０，７２を含む。第１のループ７０は、リード１２と第１の電極２２とを結線し、第２のループ７２は、第１の電極２２と第２の電極３２とを結線している。第１及び第２のループ７０，７２は、第１の電極２２に設けられたバンプ６８と一体化して形成されている。言い換えれば、１つの連続したワイヤ５０によって、リード１２、第１及び第２の電極２２，３２が電気的に接続されている。
【００３５】
リード１２にバンプ５４が設けられてもよい。バンプ５４は、第１のループ７０と一体化して形成されている。また、第２の電極３２にバンプ７４が設けられてもよい。バンプ７４は、第２のループ７２と一体化して形成されている。
【００３６】
ワイヤ５０のうち第１の電極２２上のバンプ６８から連続する部分６４，６５は、仮想直線Ｌよりも上方向に立ち上げ形成されていることが好ましい。また、第２の電極３２上のバンプ７４から連続する部分も上方向に立ち上げ形成されていることが好ましい。こうすることで、ワイヤ５０と、第１及び第２の半導体チップ２０，３０との電気的なショートを防止することができる。
【００３７】
図６には、本実施の形態に係る半導体装置の一例が示されている。基板１０に外部端子１６が形成されてもよい。例えば、基板１０には、リード１２と電気的に接続する他のリード１４が形成され、リード１４に外部端子（例えばハンダボール）１６が設けられてもよい。第１及び第２の半導体装置２０，３０は、基板１０上で封止部（例えば樹脂封止部）１８で封止されてもよい。封止部１８は、ワイヤ５０も封止する。
【００３８】
本実施の形態に係る半導体装置は、上述の製造方法から選択したいずれかの特定事項から導かれる構成を含み、その効果は上述の効果を備える。本実施の形態に係る半導体装置は、上述の製造方法以外の製造方法によって製造されるものを含む。
【００３９】
図１０には、本発明を適用した実施の形態に係る半導体装置が実装された回路基板が示されている。回路基板１０００には、半導体装置１が実装されている。回路基板１０００には、配線パターンが所望の回路となるように形成されていて、配線パターンと半導体装置１の外部端子１６とが接合されている。
【００４０】
本発明を適用した実施の形態に係る半導体装置を有する電子機器として、図１１にはノート型パーソナルコンピュータ２０００が示され、図１２には携帯電話３０００が示されている。
【００４１】
本発明は、上述した実施の形態に限定されるものではなく、種々の変形が可能である。例えば、本発明は、実施の形態で説明した構成と実質的に同一の構成（例えば、機能、方法及び結果が同一の構成、あるいは目的及び結果が同一の構成）を含む。また、本発明は、実施の形態で説明した構成の本質的でない部分を置き換えた構成を含む。また、本発明は、実施の形態で説明した構成と同一の作用効果を奏する構成又は同一の目的を達成することができる構成を含む。また、本発明は、実施の形態で説明した構成に公知技術を付加した構成を含む。
【図面の簡単な説明】
【図１】本発明の実施の形態に係る半導体装置の製造方法を示す図である。
【図２】本発明の実施の形態に係る半導体装置の製造方法を示す図である。
【図３】本発明の実施の形態に係る半導体装置の製造方法を示す図である。
【図４】本発明の実施の形態に係る半導体装置の製造方法を示す図である。
【図５】本発明の実施の形態に係る半導体装置の製造方法を示す図である。
【図６】本発明の実施の形態に係る半導体装置の一例を示す図である。
【図７】図２の部分拡大図である。
【図８】本発明の実施の形態の変形例に係る半導体装置の製造方法を示す図である。
【図９】本発明の実施の形態の変形例に係る半導体装置の製造方法を示す図である。
【図１０】本発明の実施の形態に係る回路基板を示す図である。
【図１１】本発明の実施の形態に係る電子機器を示す図である。
【図１２】本発明の実施の形態に係る電子機器を示す図である。
【符号の説明】
１２ リード（第１の領域）、 ２０ 第１の半導体チップ、 ２２ 第１の電極（第２の領域）、 ３０ 第２の半導体チップ、 ３２ 第２の電極（第３の領域）、 ５０ ワイヤ、 ５２ 先端部、 ５６ 屈曲部、 ６６ 塊部、 ７０ 第１のループ、 ７２ 第２のループ、 ６８ バンプ、 ６４，６５ 連続する部分

Claims (10)

  1. （ａ）ワイヤの先端部を第１の領域にボンディングすること、
    （ｂ）前記ワイヤを前記第１の領域から第２の領域の方向に引き出すとともに、前記第２の領域の上方に前記ワイヤの屈曲部を形成すること、
    （ｃ）前記屈曲部を溶融させることで、前記ワイヤの塊部を形成すること、
    （ｄ）前記塊部を前記第２の領域にボンディングすることを含むワイヤボンディング方法。
  2. 請求項１記載のワイヤボンディング方法において、
    前記（ｂ）工程で、前記ワイヤを前記第２の領域から離れるように上方向に折り返すことで、前記屈曲部を形成するワイヤボンディング方法。
  3. 請求項１又は請求項２に記載のワイヤボンディング方法において、
    前記（ｂ）工程で、前記ワイヤの一部を前記第２の領域に接触させた状態で、前記屈曲部を形成するワイヤボンディング方法。
  4. 請求項１から請求項３のいずれかに記載のワイヤボンディング方法において、
    前記（ｂ）工程で、溶融後の前記ワイヤのうち前記塊部から連続する部分が上方向に立ち上げ形成されるように、前記屈曲部を形成するワイヤボンディング方法。
  5. 請求項１から請求項４のいずれかに記載のワイヤボンディング方法において、
    前記（ｃ）工程で、前記屈曲部を再結晶化させるワイヤボンディング方法。
  6. 請求項１から請求項５のいずれかに記載のワイヤボンディング方法において、
    前記（ｄ）工程後に、前記ワイヤを前記第２の領域から第３の領域の方向に引き出すことをさらに含むワイヤボンディング方法。
  7. リードと、積層される複数の半導体チップと、をワイヤボンディングする半導体装置の製造方法であって、
    ワイヤの先端部を前記リードにボンディングすること、
    前記ワイヤを前記リードからいずれかの半導体チップの第１の電極の方向に引き出すとともに、前記第１の電極の上方に前記ワイヤの屈曲部を形成すること、
    前記屈曲部を溶融させることで、前記ワイヤの塊部を形成すること、
    前記塊部を前記第１の電極にボンディングすること、
    前記ワイヤを前記第１の電極から他の半導体チップの第２の電極の方向に引き出し、前記ワイヤの一部を前記第２の電極にボンディングすることを含む半導体装置の製造方法。
  8. リードと、
    前記リードにワイヤを介して電気的に接続されるとともに、積層された複数の半導体チップと、
    を含み、
    前記ワイヤは、前記リードといずれかの前記半導体チップの第１の電極とを結線する第１のループと、前記第１の電極と他の前記半導体チップの第２の電極とを結線する第２のループと、前記第１の電極上で前記第１及び第２のループと一体化してなるバンプと、を含み、
    前記第１のループのうち前記バンプから連続する部分は、前記バンプから上方向に立ち上げ形成されてなる半導体装置。
  9. 請求項８記載の半導体装置が実装された回路基板。
  10. 請求項８記載の半導体装置を有する電子機器。
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US7981788B2 (en) 2005-07-11 2011-07-19 Renesas Electronics Corporation Semiconductor device and a manufacturing method of the same
US9293435B2 (en) 2009-09-11 2016-03-22 Rohm Co., Ltd. Semiconductor device and production method therefor
US9704797B2 (en) 2011-05-18 2017-07-11 Sandisk Information Technology (Shanghai) Co., Ltd. Waterfall wire bonding
CN110828324A (zh) * 2019-10-31 2020-02-21 格物感知（深圳）科技有限公司 一种小焊接点芯片的连续打铝线方法和小焊接点芯片连接结构

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7981788B2 (en) 2005-07-11 2011-07-19 Renesas Electronics Corporation Semiconductor device and a manufacturing method of the same
US8530278B2 (en) 2005-07-11 2013-09-10 Renesas Electronics Corporation Semiconductor device and a manufacturing method of the same
US9293435B2 (en) 2009-09-11 2016-03-22 Rohm Co., Ltd. Semiconductor device and production method therefor
US9543239B2 (en) 2009-09-11 2017-01-10 Rohm Co., Ltd. Semiconductor device and production method therefor
US9837373B2 (en) 2009-09-11 2017-12-05 Rohm Co., Ltd. Semiconductor device and production method therefor
US9704797B2 (en) 2011-05-18 2017-07-11 Sandisk Information Technology (Shanghai) Co., Ltd. Waterfall wire bonding
CN110828324A (zh) * 2019-10-31 2020-02-21 格物感知（深圳）科技有限公司 一种小焊接点芯片的连续打铝线方法和小焊接点芯片连接结构

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