JP2010123817A - ワイヤボンディング方法および電子装置とその製造方法 - Google Patents
ワイヤボンディング方法および電子装置とその製造方法 Download PDFInfo
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- JP2010123817A JP2010123817A JP2008297446A JP2008297446A JP2010123817A JP 2010123817 A JP2010123817 A JP 2010123817A JP 2008297446 A JP2008297446 A JP 2008297446A JP 2008297446 A JP2008297446 A JP 2008297446A JP 2010123817 A JP2010123817 A JP 2010123817A
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- H—ELECTRICITY
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- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
- B23K20/007—Ball bonding
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- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
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Abstract
【解決手段】本発明に係るワイヤボンディング方法は、第1の電子部品に設けられた第1の電極21上にバンプ22を形成する工程と、バンプ22と第2の電子部品に設けられた第2の電極31とをワイヤ11で接合する工程と、を有し、バンプ22およびワイヤ11は、各々Auを含む材料にて形成され、且つ、バンプ22を形成する材料のAu純度が、ワイヤ11を形成する材料のAu純度よりも低くなるように設定する。
【選択図】図3
Description
当該ワイヤボンディング法は、電子部品を実装基板にダイボンディングフィルム等を介して接着した後、電子部品の表面周辺部に形成された電極パッドと、実装基板の接続端子とをAu(金)ワイヤ等で電気的に接続する方法である。
すなわち、当該合金層は、隣接する接合箇所間で成長した合金層同士が接触してショートを発生させる原因になると共に、接合箇所の剥離の原因にもなり、電子装置の誤作動を発生させるため、その対策が課題となっている。
ワイヤボンディング装置1の概略構成を図1に示す。ワイヤボンディング装置1は、ワイヤ11が巻回されたワイヤフィーダ12、ワイヤフィーダ12に巻回されたワイヤ11を電子部品2や実装基板3に供給すると共にワイヤ11に振動および荷重を印加するキャピラリ13、先端にキャピラリ13が取り付けられ、超音波が印加されることによってキャピラリ13を振動させる超音波ホーン14、超音波ホーン14を上下方向および水平方向に移動させ、また前記荷重を発生させる移動機構15、超音波ホーン14に超音波を印加する振動子16を備える。
上記構成を備え、振動子16によって超音波ホーン14が軸方向に伸縮される結果、キャピラリ13が超音波ホーン14の軸方向に振動される。
なお、あらかじめ電子部品2は、ダイボンディング等によって、実装基板3に固定された状態としている。
接合後にキャピラリ13が上昇して、設定された長さにてワイヤ11を切断し、次のボンディング位置に移動する。
図11(a)に示すように、キャピラリ13から所定長さ突出しているワイヤ11の先端部にトーチ17から放電することによって、当該先端部にFAB(Free Air Ball:圧着ボール)11Aを形成する。一般的に、ワイヤ11の形成材料として、純度99%以上のAu(金)が用いられる。
その結果、図11(c)に示すように、Au/Al合金層5が形成されて、ワイヤ11(圧着ボール11A)と第1の電極21とが接合する。
その後、キャピラリ13を所定高さまで上昇させ(図13(c)参照)、ワイヤ11を切断して(図13(d)参照)、セカンドボンディング工程が完了する。
より詳しくは、図14に示すように、隣接する圧着ボール11Aと第1の電極(Alパッド)21との接合箇所間で、Au/Al合金層5同士(図14(a)中の符号5A、5B)が、時間の経過により成長して接触する状態となり(図14(b)中の符号5C)、当該隣接する接合箇所間でショートが発生し、電子装置の誤作動が発生する。また、この現象は、高温環境になる程、Au/Al合金層5の成長速度が大きくなり、短時間で不良(ショート)が起こる。
なお、一例として、第1の電極21は一辺45[μm]程度の矩形状であって、隣接する接合箇所間(第1の電極21間)の距離は5[μm]程度である。
一例として、前記従来の実施形態に係るワイヤボンディング方法で説明したワイヤボンディング装置1、電子部品(ICチップ)2、実装基板3を用いて、本実施形態に係るワイヤボンディング方法を実施する場合について説明する。なお、実装基板3に電子部品2がダイボンディングされている状態から説明を行う。
ここで、本実施形態に特徴的な構成として、バンプ22を形成する材料、および、ワイヤ11を形成する材料には、Auを含む材料を用い、且つ、バンプ22を形成する材料のAu純度が、ワイヤを形成する材料のAu純度よりも低くなるように、それぞれの材料を決定する。
より具体的には、ワイヤ11を形成する材料のAu純度が99%以上100%以下であり、バンプ22を形成する材料のAu純度が75%以上99%未満であることが好適である。一例として、本実施形態では、ワイヤ11を形成する材料に、Au純度が99.99%の材料を用い、バンプ22を形成する材料に、Au純度が80%で、他の構成元素としてAgが20%含まれる合金材料を用いている。なお、当該合金材料を形成するAu以外の材料としては、Ag、Pd等が挙げられ、圧着ボール11Aの形状を接合に適した球形状とすることができ、且つ形状にバラツキが生じない点で好適である。
より詳しくは、前述の従来のワイヤボンディング方法における図10(a)および図10(b)で説明した方法と同じ方法によって、バンプ22の形成が可能となる。すなわち、図10(a)のFAB形成工程と同様にして、キャピラリ13で供給可能に支持されたワイヤ(バンプ形成用ワイヤ)の先端部にトーチ17から放電することによって、ワイヤ(バンプ形成用ワイヤ)の先端部に圧着ボールを形成する。
次いで、図10(b)のファーストボンディング工程と同様にして、電子装置2上の第1の電極21に対し、キャピラリ13によって所定荷重で圧着ボールを押し付けた状態で、所定強度・所定時間の超音波加振を行い、両者を合金化させることにより接合する。
次いで、接合後にワイヤ(バンプ形成用ワイヤ)を切断することによって、図3(a)に示すように、第1の電極21上にバンプ22が形成される。
もちろん、別の方法によって、第1の電極21上に、バンプ22を形成しても構わない。
なお、これらの工程の実施方法は、前述の図10(b)〜図10(d)(およびそれらの詳細図)で説明される実施方法と同様であり、説明を省略する。
これに対し、本実施形態では、第1の電極21上にAu純度の低いワイヤ(バンプ形成用ワイヤ)を用いてバンプ22を形成し、当該バンプ22上にAu純度の高いワイヤ11を用いて接合を行う。その結果、バンプ22と第1の電極21との接合箇所には、Au(低純度)/Al合金層6が形成されるものの、従来のAu(高純度)/Al合金層5において問題となっていた課題の解決が可能となる。
より具体的には、図6の高温放置時間と接合箇所の合金層径との相関図に示されるように、図5(b)のAu(高純度)/Al合金層5の場合(図6中のAu純度が99.99%のデータで示される)、高温環境下に放置されると、時間の経過と共に、合金層が成長する結果となっているが、図5(a)のAu(低純度)/Al合金層6の場合(図6中のAu純度が80%のデータで示される)、高温環境下において経時的な合金層成長が抑制される効果が得られている。
ちなみに、本実施形態におけるバンプ22とワイヤ11(圧着ボール11A)との接合箇所においては、両者が共にAuを含む材料であるため、Au/Al合金層の問題は生じない。
この点に関して、ファーストボンディングの接合箇所における合金層成長の課題を解決するのみならば、従来のワイヤボンディング方法において接続用ワイヤ11に低純度(例えば純度80%)のAuワイヤを用いることによっても、当該合金層の成長を抑制することは可能と考えられる。しかしながら、低純度(例えば純度80%)のAuワイヤは、高純度(例えば純度99.99%)のAuワイヤと比較して電気抵抗値が4倍程度大きいため、特に小型化が進む電子装置への適用は、短ワイヤ化、太線化等の対応が必要になる点で設計上の大きな制約となり、実用化を阻む課題となっている。
図7に示す電子装置4は、図4(正面断面図)に示す電子装置4と同様に、図3で説明した工程順で製造されるものであるが、実装基板3上の第2の電極31の位置が、電子部品2の第1の電極21上に形成されるバンプ22よりも高い位置に設けられる場合の例である。
つまり、圧着ボール11Aの接合位置が、図4の電子装置4においてはバンプ22上であったのに対し、本実施形態の電子装置4においては第2の電極31上となる。なお、構成部材の形成材料については、図3で説明した場合と同様であり、説明を省略する。
その結果、本実施形態に係るワイヤボンディング方法により製造される電子装置およびその製造によれば、ワイヤボンディングによる接合箇所において、ショート、剥離の発生を抑制することが可能となり、特に、高温環境下で使用される電子装置、あるいは、高度の信頼性が要求される電子装置において、非常に高い信頼性を確保することが可能となる。
2 電子部品
3 実装基板
4 電子装置
5、5A、5B、5C Au(高純度)/Al合金層
6 Au(低純度)/Al合金層
11 ワイヤ(接続用ワイヤ)
11A 圧着ボール
13 キャピラリ
17 トーチ
21 第1の電極
22 バンプ
31 第2の電極
Claims (6)
- 第1の電子部品に設けられた第1の電極上にバンプを形成する工程と、
前記バンプと第2の電子部品に設けられた第2の電極とをワイヤで接合する工程と、を有し、
前記バンプおよび前記ワイヤは、各々Auを含む材料にて形成され、且つ、前記バンプを形成する材料のAu純度が、前記ワイヤを形成する材料のAu純度よりも低いこと
を特徴とするワイヤボンディング方法。 - 電子部品に設けられた第1の電極上にバンプを形成する工程と、
前記バンプと実装基板に設けられた第2の電極とをワイヤで接合する工程と、を有し、
前記バンプおよび前記ワイヤは、Auを含む材料にて形成され、且つ、前記バンプを形成する材料のAu純度が、前記ワイヤを形成する材料のAu純度よりも低いこと
を特徴とする電子装置の製造方法。 - 前記バンプを形成する材料のAu純度が75%以上99%未満であり、
前記ワイヤを形成する材料のAu純度が99%以上100%以下であること
を特徴とする請求項2記載の電子装置の製造方法。 - 前記バンプを形成する工程は、ワイヤ状のAuを含む材料の先端部に放電して形成したボールを前記第1の電極に当接させて荷重を印加しながら超音波加振することによって該バンプを形成する工程を備えること
を特徴とする請求項2または請求項3記載の電子装置の製造方法。 - 前記バンプを形成するAuを含む材料には、AgもしくはPdの少なくとも一つが含まれること
を特徴とする請求項2〜4のいずれか一項に記載の電子装置の製造方法。 - 電子部品の第1の電極上に設けられたバンプと、
前記バンプと実装基板に設けられた第2の電極とを接合するワイヤと、を備え、
前記第2の電極および前記バンプは、Auを含む材料にて形成され、且つ、前記バンプを形成する材料のAu純度が、前記第2の電極を形成する材料のAu純度よりも低いこと
を特徴とする電子装置。
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US12/575,141 US20100126763A1 (en) | 2008-11-21 | 2009-10-07 | Wire bonding method, electronic apparatus, and method of manufacturing same |
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TWI395313B (zh) | 2012-11-07 | 2013-05-01 | Wire technology co ltd | 銲球凸塊結構及其形成方法 |
DE102017114771B4 (de) * | 2017-06-29 | 2022-01-27 | Pac Tech - Packaging Technologies Gmbh | Verfahren und Vorrichtung zur Herstellung einer Drahtverbindung sowie Bauelementanordnung mit Drahtverbindung |
CN117641722A (zh) * | 2022-08-19 | 2024-03-01 | 长鑫存储技术有限公司 | 半导体封装基板及其制造方法、半导体封装结构 |
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JP2004281491A (ja) * | 2003-03-13 | 2004-10-07 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2005294874A (ja) * | 2005-07-06 | 2005-10-20 | Nippon Steel Corp | ワイヤをウェッジ接合した半導体装置及び金合金ボンディングワイヤ |
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