FR2752334B1 - Dispositif a semiconducteurs muni d'un cadre de montage et son procede de fabrication - Google Patents

Dispositif a semiconducteurs muni d'un cadre de montage et son procede de fabrication

Info

Publication number
FR2752334B1
FR2752334B1 FR9708739A FR9708739A FR2752334B1 FR 2752334 B1 FR2752334 B1 FR 2752334B1 FR 9708739 A FR9708739 A FR 9708739A FR 9708739 A FR9708739 A FR 9708739A FR 2752334 B1 FR2752334 B1 FR 2752334B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
device provided
mounting frame
mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9708739A
Other languages
English (en)
Other versions
FR2752334A1 (fr
Inventor
Sadayoshi Arakawa
Seiichi Ito
Kenichi Nishiyama
Koei Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of FR2752334A1 publication Critical patent/FR2752334A1/fr
Application granted granted Critical
Publication of FR2752334B1 publication Critical patent/FR2752334B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
FR9708739A 1996-07-15 1997-07-09 Dispositif a semiconducteurs muni d'un cadre de montage et son procede de fabrication Expired - Fee Related FR2752334B1 (fr)

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JP2001230360A (ja) * 2000-02-18 2001-08-24 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2001250898A (ja) * 2000-03-08 2001-09-14 Mitsui Mining & Smelting Co Ltd 金メッキビームリードの半導体素子への接合方法
KR100628900B1 (ko) * 2000-04-25 2006-09-27 후지쯔 가부시끼가이샤 반도체 칩의 실장방법
KR20030066344A (ko) * 2002-02-01 2003-08-09 에섹 트레이딩 에스에이 와이어본더로 접합시에 최적의 접합 파라미터들을결정하기 위한 방법
US7068344B2 (en) * 2003-02-24 2006-06-27 3M Innovative Properties Company Cholesteric liquid crystal optical bodies and methods of manufacture and use
US6913708B2 (en) * 2003-02-24 2005-07-05 3M Innovative Properties Company Cholesteric liquid crystal drying process and solvent
US7029729B2 (en) * 2003-02-24 2006-04-18 3M Innovative Properties Company Cholesteric liquid crystal additives
JP2005314749A (ja) * 2004-04-28 2005-11-10 Shinei Hitec:Kk 電子部品及びその表面処理方法
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US20060186179A1 (en) * 2005-02-23 2006-08-24 Levine Lee R Apparatus and method for bonding wires
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JP6092266B2 (ja) * 2013-02-06 2017-03-08 シャープ株式会社 発光装置の製造方法
ITMI20131530A1 (it) 2013-09-17 2015-03-18 St Microelectronics Srl Dispositivo elettronico con elemento di interfaccia bimetallico per wire-bonding
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KR980012159A (ko) 1998-04-30
CN1131562C (zh) 2003-12-17
FR2752334A1 (fr) 1998-02-13
KR100454198B1 (ko) 2004-12-17
US5994212A (en) 1999-11-30
CN1172350A (zh) 1998-02-04

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